Testing device for high-power deep-groove wafer
By designing a test device for high-power deep trench wafers, the deviation problem of difficult to measure and control the groove depth and morphology in the prior art is solved, and the rapid measurement of the morphology and trench depth of high-power deep trench is achieved, ensuring the stability and controllability of product batch process results.
Patent Information
- Application Number
- CN202421715906.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-19
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2034-07-19
AI Technical Summary
It is difficult for the prior art to effectively measure and control the deviation of groove depth and morphology during the manufacturing process of high-power deep trench semiconductor chips, resulting in the failure of voltage to meet the standards or abnormal voltage characteristics of the device during alloy testing.
A high-power deep trench wafer test device is designed, which includes a chip bearing platform, a probe clamping device and a CNC display screen. Through the adjustment of X, Y, and Z axes and the use of probes, rapid measurement and positioning of wafer groove depth and morphology are achieved.
It realizes rapid measurement of the morphology and groove depth of high-power deep grooves, reduces circulation time and product scrapping risks, and ensures the stability and controllability of product batch process results.
Smart Images
Figure CN222912656U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor testing, in particular to a device used for measuring the process results in the manufacturing process of high-power deep trench semiconductor chips, and is particularly suitable for measuring the process results of wet hair trench etching with a groove depth and width of more than 100 um. Background Technique
[0002] At present, with the continuous development and maturity of the technology of domestic high-power devices, the demand for high-voltage high-power chips is increasing year by year, and the speed of import substitution is also gradually accelerating. The key manufacturing process of this product requires the use of large-size, deep mesa process technology. Generally, the mesa width and depth are both more than 100 um. This process basically uses a wet hair trench etching device for grooving. The process is greatly affected by the temperature, concentration of the etching agent and the stability of the rotating stirring device of the etching equipment, and it is easy to have deviations in groove depth and morphology, resulting in the situation that the voltage of the device does not meet the standard or the voltage characteristics are abnormal during the final alloy test!
[0003] Conventional test schemes cannot meet the test requirements of this specification type. At present, most of them use the method of running samples or destructive slicing to control the process results of the grooving process, which not only wastes materials but also has a high risk and increases the circulation time. That is, when performing the grooving process for each batch, a small amount of products are first sampled and processed according to fixed process conditions, and then the sampled products need to be sliced and the groove depth and morphology are observed through a large-magnification microscope, or the samples are circulated to the alloy process for 4 days, and the corresponding grooving process is matched according to the test results by testing the breakdown voltage characteristics of the chips! It is not only time-consuming but also increases the cost of scrapping!
[0004] With the continuous increase in the demand for such high-voltage high-power devices, the application fields of customers are also constantly expanding, and have shifted from the basic industrial control field to new energy, automotive electronics, solar inverters, high-voltage power grids and other application fields. This process is the core process for forming the breakdown voltage of high-voltage devices. The quality stability of this process is crucial in the production process of products. At the same time, customers' quality requirements and cost requirements for such products are constantly increasing, and the old process control scheme can no longer meet the needs of current mass production and customer delivery. Summary of the Utility Model
[0005] The purpose of the utility model is to propose a test device for high-power deep trench wafers aiming at the wafer test problem obtained by the grooving process in the manufacturing process of high-power deep trench semiconductor chips.
[0006] The technical solution of the utility model is as follows:
[0007] The utility model provides a test device for high-power deep trench wafers, and the device includes:
[0008] A wafer carrier platform is disposed on the base for carrying a wafer and capable of driving the wafer to move in the X-axis and Y-axis directions;
[0009] A probe clamping device for clamping a probe and capable of driving the probe to move in the X-axis and Z-axis directions;
[0010] A numerical control display screen for receiving and displaying the test results of the probe. The numerical control display screen is connected to the wafer carrier platform through a column. A cross arm is provided on the side wall of the column, and the other end of the cross arm is connected to the probe clamping device.
[0011] Further, the wafer carrier platform can be compatible with 4-6 inch wafers.
[0012] Further, an X-axis adjusting screw and a Y-axis adjusting screw are provided on the wafer carrier platform for respectively adjusting the positions of the wafer carrier platform in the X-axis and Y-axis directions.
[0013] Further, the probe clamping device includes a Z-axis slide rail, a Z-axis adjusting screw, a clamping arm, and an X-axis slide rail. The side wall of the Z-axis slide rail is disposed on the cross arm. A Z-axis adjusting screw is provided on the Z-axis slide rail. One end of the clamping arm can move along the Z-axis slide rail, and the other end is used for clamping the X-axis slide rail. A probe is provided at the front end of the X-axis slide rail.
[0014] Further, the Z-axis adjusting screw is disposed above the Z-axis slide rail.
[0015] Further, the clamping arm is in a T shape.
[0016] Further, keys and a display screen are provided on the numerical control display screen.
[0017] Further, the probe includes a camera and a distance sensor for obtaining the appearance and groove depth of the wafer.
[0018] Advantages of the present utility model:
[0019] The test device of the present utility model can achieve rapid positioning, rapid measurement of the morphology and groove depth of high-power deep trenches, can realize rapid movement and positioning of all areas of the wafer, is compatible with 4-6 inch wafers, and can quickly adapt to the points to be tested on the wafer by adjusting the probe clamping device through the X-axis and Z-axis adjusting screws. The measurement results of the groove depth and groove morphology can be displayed at any time through the numerical control display screen, which is convenient for users to quickly formulate batch process conditions according to the measurement results, ensure the stable and controllable batch process results of the product, and reduce the circulation time and the risk of product scrapping.
[0020] Other features and advantages of the present utility model will be described in detail in the following specific implementation part. Description of the Drawings
[0021] The above and other objects, features, and advantages of the present utility model will become more apparent by describing the exemplary embodiments of the present utility model in more detail in conjunction with the accompanying drawings, wherein, in the exemplary embodiments of the present utility model, the same reference numerals generally represent the same components.
[0022] Figure 1 The structural schematic diagram of the high-power deep trench wafer testing device of the present utility model is shown.
[0023] Figure 2 The schematic diagram of the testing state of the present utility model is shown. Detailed implementation manners
[0024] The preferred embodiments of the present utility model will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present utility model are shown in the drawings, it should be understood that the present utility model can be implemented in various forms and should not be limited by the embodiments set forth herein.
[0025] As Figure 1 , 2 shown, the structural schematic diagram and the testing state schematic diagram of the high-power deep trench wafer testing device of the present utility model are presented.
[0026] The present utility model provides a high-power deep trench wafer testing device, which can quickly measure the depth and topography of the mesa process grooves of high-voltage high-power semiconductor chips. The device includes:
[0027] A wafer carrier platform 2 is arranged on a base 1 and is used for carrying 4-6 inch wafers 6. The wafer carrier platform 2 is provided with an X-axis adjustment screw 21 and a Y-axis adjustment screw 22, which are respectively used for adjusting the positions of the wafer carrier platform 2 in the X and Y axes;
[0028] A probe clamping device 3 includes a Z-axis slide rail 31, a Z-axis adjustment screw 32, a clamping arm 33, and an X-axis slide rail 34. The side wall of the Z-axis slide rail 31 is arranged on a cross arm 24. The Z-axis adjustment screw 32 is arranged on the Z-axis slide rail 31. One end of the clamping arm 33 can move along the Z-axis slide rail 31, and the other end is connected with an X-axis chute. The X-axis slide rail 34 is slidably connected in the X-axis chute, and a probe 5 is arranged at the front end of the X-axis slide rail 34;
[0029] A numerical control display screen 4 is used for receiving and displaying the test results of the probe 5. The numerical control display screen 4 is connected to the wafer carrier platform 2 through a column 23; a cross arm 24 is arranged on the side wall of the column 23, and the other end of the cross arm 24 is connected to the probe clamping device 3.
[0030] Further, the clamping arm 33 is T-shaped. One end of the vertical axis of the T-shaped clamping arm 33 moves on the Z-axis slide rail 31, and the other end is connected to the horizontal axis. The horizontal axis is connected with an X-axis chute, and an X-axis slide rail 34 is slidably connected in the X-axis chute. A probe 5 is arranged at the front end of the X-axis slide rail 34.
[0031] Further, the probe 5 includes a camera and a distance sensor, and is used to obtain the appearance and groove depth of the wafer 6.
[0032] During specific implementation:
[0033] In the present invention, the device mainly relies on the rapid movement of the X and Y axes of the wafer stage 2 for position adjustment, and uses the adjustment of the X and Z axis positions of the probe clamping device 3 to measure the grooves on the surface of the chip at a predetermined position or a random position.
[0034] Use the moving function of the wafer stage 2 to quickly select a predetermined position. Adjust the up and down position through the Z-axis adjustment screw 32 of the probe clamping device 3 to a flat area above the surface groove of the chip. Then, gradually adjust the probe of the probe downward by fine adjustment until the probe touches the surface of the wafer 6 placed on the wafer stage 2. Then drive the probe to move horizontally along the X-axis direction on the chip surface. As the displacement of the probe changes in the vertical direction, the measurement result will be displayed on the numerical control display screen 4 in real time. According to the scanning result, the groove depth and topography of the chip at the measurement position can be read. Repeat the above operations to measure each point to be tested one by one, which is efficient and convenient; it is convenient for users to quickly formulate batch process conditions according to the measurement results, ensure the stable control of the batch process results of the product, and reduce the circulation time and the risk of product scrapping.
[0035] The embodiments of the present utility model have been described above. The above description is exemplary and not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations are obvious to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims
1. A high-power deep trench wafer test device, characterized in that: The device includes: A wafer-carrying platform (2) is arranged on the base (1), used for carrying the wafer (6), and capable of driving the wafer (6) to move in the X-axis and Y-axis directions; A probe clamping device (3) is used to clamp the probe (5) and is capable of driving the probe (5) to move in the X-axis and Z-axis directions; A numerical control display screen (4) is used to receive and display the test results of the probe (5), wherein the numerical control display screen (4) is connected to the film holding platform (2) via a column (23); a cross arm (24) is provided on the side wall of the column (23), and the other end of the cross arm (24) is connected to the probe clamping device (3).
2. The high-power deep trench wafer testing device according to claim 1, characterized in that: The wafer loading platform (2) is compatible with 4-6 inch wafers.
3. The high-power deep trench wafer testing device according to claim 1, characterized in that: The wafer-carrying platform (2) is provided with an X-axis adjusting screw (21) and a Y-axis adjusting screw (22), which are used to adjust the positions of the wafer-carrying platform (2) on the X and Y axes respectively.
4. The high-power deep trench wafer testing device according to claim 1, characterized in that: The probe clamping device (3) comprises a Z-axis slide rail (31), a Z-axis adjustment screw (32), a clamping arm (33) and an X-axis slide rail (34); the side wall of the Z-axis slide rail (31) is arranged on the cross arm (24); the Z-axis slide rail (31) is provided with a Z-axis adjustment screw (32); one end of the clamping arm (33) is movable along the Z-axis slide rail (31); the other end is used for clamping the X-axis slide rail (34); and a probe (5) is arranged at the front end of the X-axis slide rail (34).
5. The high-power deep trench wafer testing device according to claim 4, characterized in that: The Z-axis adjusting screw (32) is arranged above the Z-axis slide rail (31).
6. The high-power deep trench wafer testing device according to claim 4, characterized in that: The clamping arm (33) is T-shaped.
7. The high-power deep trench wafer testing device according to claim 1, characterized in that: The numerical control display screen (4) is provided with buttons and a display screen.
8. The high-power deep trench wafer testing device according to claim 1, characterized in that: The probe (5) comprises a camera and a distance sensor, and is used to obtain the appearance and groove depth of the wafer (6).