Device for testing generated power of semiconductor power generation sheet

Abstract

The utility model discloses a device for testing the power generation power of a semiconductor power generation sheet, and the device comprises a housing, a heating mechanism, a heat dissipation mechanism, a disassembly assembly, a load resistor, an ammeter, a voltmeter, a first temperature sensor, and a second temperature sensor. The heating mechanism comprises a heater and a heat conduction block, the heater is connected with the heat conduction block, the heat dissipation mechanism comprises a heat dissipation block, the heat dissipation block and the heat conduction block are arranged side by side at intervals, one of the heat conduction block and the heat dissipation block is arranged on the shell, the heat conduction block and the heat dissipation block are detachably connected through a detachable assembly, and the heat conduction block and the heat dissipation block clamp the hot face and the cold face of the semiconductor power generation piece. The load resistor, the ampere meter and the semiconductor power generation sheet are connected in series, the voltmeter and the load resistor are connected in parallel, the ampere meter and the voltmeter are arranged on the shell, the first temperature sensor is connected with the heat conduction block, and the second temperature sensor is connected with the heat dissipation block. The power generation efficiency of different types of power generation sheets can be compared under different temperature difference conditions through a temperature sensor, an ampere meter and a voltmeter.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power generation chips, in particular to a device for testing the power generation power of a semiconductor power generation chip. Background Art

[0002] A semiconductor power generation chip, also known as a thermoelectric power generation chip or a thermoelectric generator, is a solid-state energy conversion device that can directly convert thermal energy into electrical energy. Its working principle is mainly based on the Seebeck effect or the thermoelectric effect, which is a physical phenomenon. When there is a temperature difference at both ends of a thermocouple composed of two different types of semiconductor materials (usually called p-type and n-type semiconductors), an electromotive force will be generated at their interface, and then an electric current will be formed.

[0003] After retrieval, the applications of semiconductor power generation chips are as follows:

[0004] Chinese Patent 1, CN204578406U, discloses a semiconductor thermoelectric power generation device, including a hot water tank, a condenser, a semiconductor power generation chip, an inverter, a transformer, a storage battery, a controller, an electrical equipment, and a cold water tank. The cold water tank is installed on one side of the semiconductor power generation chip, and the hot water tank is installed on the other side. A condenser is provided in the hot water tank. The semiconductor power generation chip is connected to the inverter through a wire, the inverter is connected to the transformer through a wire, the transformer is connected to the storage battery through a wire, and the storage battery is sequentially connected with the controller and the electrical equipment.

[0005] Chinese Patent 2, CN205725526U, a solar power generation device, includes a curved reflector, a semiconductor power generation chip, a heat dissipation module, and a control circuit. The curved reflector is provided with a bracket that supports the hot end face of the semiconductor power generation chip. The heat dissipation module is arranged on the cold end face of the semiconductor power generation chip. The semiconductor power generation chip is provided with a power output terminal, which is connected to the control circuit.

[0006] In practical applications, the power generation efficiency of semiconductor power generation chips is affected by various factors, including but not limited to the temperature difference, material properties, and thermal management efficiency. However, the lack of a standardized test device to accurately measure the power generation efficiency under different temperature difference conditions limits the accurate evaluation and comparison of the performance of power generation chips. Summary of the Utility Model

[0007] Therefore, it is necessary to provide a device for testing the power generation power of a semiconductor power generation chip, which can test the power generation power of the semiconductor power generation chip at different temperatures.

[0008] To achieve the above object, the utility model provides a device for testing the power generation power of a semiconductor power generation chip, including a housing, a heating mechanism, a heat dissipation mechanism, a disassembly component, a load resistor, an ammeter, a voltmeter, a first temperature sensor, and a second temperature sensor;

[0009] The heating mechanism includes a heater and a heat conducting block. The heater is connected to the heat conducting block. The heat dissipation mechanism includes a heat dissipation block. The heat dissipation block is arranged side by side and at intervals with the heat conducting block. One of the heat conducting block and the heat dissipation block is arranged on the housing. The heat conducting block and the heat dissipation block are detachably connected through the disassembly component. The heat conducting block and the heat dissipation block clamp the hot surface and the cold surface of the semiconductor power generation sheet. The load resistor, the ammeter and the semiconductor power generation sheet are connected in series. The voltmeter is connected in parallel with the load resistor. The ammeter and the voltmeter are arranged on the housing. The first temperature sensor is connected to the heat conducting block, and the second temperature sensor is connected to the heat dissipation block.

[0010] Further, a first fitting groove is provided on the heat conducting block, and the first temperature sensor is embedded in the first fitting groove. A second fitting groove is provided on the heat dissipation block, and the second temperature sensor is embedded in the second fitting groove.

[0011] Further, a first fitting groove is provided on the surface of the heat conducting block that contacts the semiconductor power generation sheet. The first temperature sensor is flush with the surface of the heat conducting block that contacts the semiconductor power generation sheet. A second fitting groove is provided on the surface of the heat dissipation block that contacts the semiconductor power generation sheet. The second temperature sensor is flush with the surface of the heat dissipation block that contacts the semiconductor power generation sheet.

[0012] Further, the first temperature sensor and the second temperature sensor are thermocouple sensors.

[0013] Further, the heater includes a temperature controller and a heating rod. The temperature controller is connected to the heating rod, and the heating rod is connected to the heat conducting block.

[0014] Further, the heat conducting block is an aluminum block.

[0015] Further, the heat dissipation mechanism further includes a fan. The fan is arranged inside the housing and is facing the heat dissipation block.

[0016] Further, the heat dissipation block is arranged on the housing, the heat conducting block is located above the housing. The disassembly component includes a screw. The heat dissipation block is provided with a screw hole adapted to the screw, and the heat conducting block is provided with a through hole for the screw to pass through. The screw passes through the through hole and is threadedly connected to the screw hole.

[0017] Further, the resistance value of the load resistor is the same as the internal resistance of the semiconductor power generation sheet.

[0018] The above technical solution has the following beneficial effects:

[0019] The efficient operation of the heating mechanism and the heat dissipation mechanism ensures rapid attainment of the set temperature while maintaining a stable temperature difference, thereby enhancing the test efficiency and accuracy. The design of the detachable components simplifies the loading and unloading of the semiconductor power generation chip, facilitating repeated testing and quick replacement of different samples. This embodiment can not only test the performance of existing semiconductor power generation chips but also compare the power generation efficiency of different models of power generation chips under different temperature difference conditions through temperature sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 FIG. is a top view of the power generation power testing device in this embodiment;

[0021] Figure 2 is Figure 1 a cross-sectional view taken along line A-A in;

[0022] Figure 3 is Figure 2 a schematic diagram of the heat conduction block, semiconductor power generation block, heat dissipation block, first temperature sensor, and second temperature sensor in.

[0023] DESCRIPTION OF THE REFERENCE NUMERALS:

[0024] 1. Housing;

[0025] 2. Heating mechanism; 21. Heat conduction block; 22. Temperature controller; 23. Heating rod;

[0026] 3. Heat dissipation mechanism; 31. Heat dissipation block; 32. Fan;

[0027] 4. Screw;

[0028] 5. Load resistor;

[0029] 6. Ammeter;

[0030] 7. Voltmeter;

[0031] 8. First temperature sensor;

[0032] 9. Second temperature sensor;

[0033] 10. Semiconductor power generation chip. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0034] To describe in detail the technical content, structural features, achieved objectives, and effects of the technical solution, the following provides a detailed description in conjunction with specific embodiments and with reference to the accompanying drawings. The heater is connected to an external power source through wires and can precisely control the heating power. The heat conduction block is installed adjacent to the heater and is connected thereto through an efficient heat conduction path to ensure uniform heat transfer.

[0035] Please refer to Figure 1 and Figure 2, this embodiment provides a test device for the power generation of a semiconductor power generation chip, which includes a housing 1, a heating mechanism 2, a heat dissipation mechanism 3, a disassembly component, a load resistor 5, an ammeter 6, a voltmeter 7, a first temperature sensor 8 and a second temperature sensor 9;

[0036] The heating mechanism 2 includes a heater and a heat conduction block 21. The heater is connected to the heat conduction block 21. The heat dissipation mechanism 3 includes a heat dissipation block 31. The heat dissipation block 31 is arranged side by side and at intervals with the heat conduction block 21. One of the heat conduction block 21 and the heat dissipation block 31 is arranged on the housing 1. The heat conduction block 21 and the heat dissipation block 31 are detachably connected through the disassembly component. The heat conduction block 21 and the heat dissipation block 31 clamp the hot surface and the cold surface of the semiconductor power generation chip 10. The load resistor 5, the ammeter 6 and the semiconductor power generation chip 10 are connected in series. The voltmeter 7 is connected in parallel with the load resistor 5. The ammeter 6 and the voltmeter 7 are arranged on the housing 1. The first temperature sensor 8 is connected to the heat conduction block 21, and the second temperature sensor 9 is connected to the heat dissipation block 31.

[0037] The housing 1 provides protection and a support framework for the components of the test device (such as the ammeter 6, the voltmeter 7, the heat dissipation block 31, etc.), ensuring the safety and stability of the internal components.

[0038] The heater is connected to an external power supply through an electric wire and can precisely control the heating power. The heat conduction block 21 is in contact with the heater to ensure uniform heat transfer. The heat conduction block 21 is made of a material with a high thermal conductivity (such as copper or aluminum) to ensure that heat is uniformly and quickly transferred to the hot surface of the semiconductor power generation chip 10. The heat conduction block 21 and the heat dissipation block 31 are arranged oppositely with an appropriate distance maintained in the middle, and the semiconductor power generation chip 10 is placed between the heat conduction block 21 and the heat dissipation block 31.

[0039] The heat conduction block 21 and the heat dissipation block 31 are assembled together through the disassembly component. Through the setting of the disassembly component, the user is allowed to easily install and disassemble the semiconductor power generation chip 10, while ensuring that the hot surface and the cold surface are firmly and evenly clamped without damaging the structure of the power generation chip.

[0040] Please refer to Figure 1 , when the semiconductor power generation chip 10 operates to generate electricity, it acts as a power source in the circuit. The ammeter 6 is connected in series in the circuit to measure the current passing through the semiconductor power generation chip 10. The voltmeter 7 is connected in parallel across the load resistor 5 to measure the voltage generated by the power generation chip. These instruments should all have high precision and a wide range to adapt to different test conditions.

[0041] The first temperature sensor 8 is connected to the heat conducting block 21 and is used to monitor the temperature change of the hot surface of the semiconductor power generation sheet 10 in real time. This temperature sensor can select a thermocouple with high precision and fast response to ensure the accuracy of the temperature reading. The second temperature sensor 9 is connected to the surface of the cooling block and is used to monitor the temperature of the cold surface of the semiconductor power generation sheet 10 in real time. This temperature sensor can select a thermocouple with high precision and fast response to ensure the accuracy of the temperature reading.

[0042] The above technical solution has the following beneficial effects:

[0043] The efficient operation of the heating mechanism 2 and the heat dissipation mechanism 3 ensures rapid reaching of the set temperature, while maintaining a stable temperature difference, improving the test efficiency and accuracy. The design of the disassembly component makes the loading and unloading of the semiconductor power generation sheet 10 simple and fast, which is beneficial for repeated tests and rapid replacement of different samples. This embodiment can not only test the performance of the existing semiconductor power generation sheet 10, but also compare the power generation efficiency of different models of power generation sheets under different temperature difference conditions through the temperature sensor.

[0044] Please refer to Figure 2 and Figure 3 In this embodiment, a first fitting groove is provided on the heat conducting block 21, and the first temperature sensor 8 is embedded in the first fitting groove. A second fitting groove is provided on the heat dissipation block 31, and the second temperature sensor 9 is embedded in the second fitting groove. The first temperature sensor 8 (usually a thermocouple or other high-precision sensor) is precisely embedded in the first fitting groove to directly sense the temperature of the heat conducting block 21, and thus the temperature of the hot surface of the semiconductor power generation sheet 10 can be obtained. Similarly, the second temperature sensor 9 (usually a thermocouple or other high-precision sensor) is precisely embedded in the second fitting groove to directly sense the temperature of the heat dissipation block 31, and thus the temperature of the cold surface of the semiconductor power generation sheet 10 can be obtained. The sensor directly senses the temperature change of the material itself, rather than through air or indirect contact, so it can more quickly and accurately reflect the actual temperature difference between the hot and cold surfaces.

[0045] Please refer to Figure 2 and Figure 3, in this embodiment, a first fitting groove is provided on one side of the heat conducting block 21 that contacts the semiconductor power generation sheet 10 (its hot surface). The first temperature sensor 8 is flush with the side of the heat conducting block 21 that contacts the semiconductor power generation sheet 10. A second fitting groove is provided on one side of the heat dissipation block 31 that contacts the semiconductor power generation sheet 10 (its cold surface). The second temperature sensor 9 is flush with the side of the heat dissipation block 31 that contacts the semiconductor power generation sheet 10. The first temperature sensor 8 not only fits tightly into the first fitting groove on the heat conducting block 21 and is flush with it, but also directly contacts the hot surface of the semiconductor power generation sheet 10, forming a direct heat transfer link of hot surface - sensor - heat conducting block 21. Similarly, while the second temperature sensor 9 fits into the second fitting groove of the heat dissipation block 31 and remains flush, it also directly contacts the cold surface of the semiconductor power generation sheet 10, establishing a direct heat exchange channel of cold surface - sensor - heat dissipation block 31.

[0046] In a preferred embodiment, the first temperature sensor 8 and the second temperature sensor 9 are thermocouple sensors. In some embodiments, the first temperature sensor 8 and the second temperature sensor 9 are thermistors, infrared sensors, etc.

[0047] Please refer to Figure 1 , in this embodiment, the heater includes a temperature controller 22 and a heating rod 23. The temperature controller 22 is connected to the heating rod 23, and the heating rod 23 is connected to the heat conducting block 21. The temperature controller 22 can be a single - chip microcomputer. According to a preset target temperature or test program, it continuously monitors the temperature of the heating rod 23 and adjusts the heating current through a precise algorithm to achieve closed - loop control of the heating process. The heating rod 23 is made of a resistance wire wrapped in a high - temperature resistant insulating material, and heat is generated by passing an electric current through the resistance wire. The heating rod 23 is directly connected to the output end of the temperature controller 22, can quickly respond to the control signal, and precisely adjust the heating power. The heat generated by the heating rod 23 is conducted to the heat conducting block 21, and then evenly distributed to the hot surface of the semiconductor power generation sheet 10 through the heat conducting block 21, forming a stable temperature difference environment to drive the power generation process.

[0048] Please refer to Figure 1 and Figure 2 , in this embodiment, the heat conducting block 21 is an aluminum block. Aluminum, as an excellent heat conductor, can quickly transfer the heat generated by the heating mechanism 2 evenly to the hot surface of the semiconductor power generation sheet 10 closely attached thereto.

[0049] Please refer to Figure 2, in this embodiment, the heat dissipation mechanism 3 further includes a fan 32, that is, the heat dissipation mechanism 3 is an air-cooled heat dissipation mechanism 3. The fan 32 is arranged inside the housing 1 and is directly opposite to the heat dissipation block 31. A high-efficiency DC fan 32 is selected, and its rotation speed and air volume are adjusted according to the heat dissipation requirements. The fan 32 is installed inside the housing 1 of the test device near the heat dissipation block 31 to ensure that the air flow can effectively take away the heat accumulated on the surface of the heat dissipation block 31. Preferably, heat dissipation fins can be installed between the fan 32 and the heat dissipation block 31, greatly increasing the surface area in contact with the air, so as to dissipate heat through natural convection and forced convection (the action of the fan 32).

[0050] In some embodiments, the heat dissipation mechanism 3 is a water-cooled heat dissipation mechanism 3.

[0051] Please refer to Figure 2 , in this embodiment, the heat dissipation block 31 is arranged on the housing 1, the heat conduction block 21 is located above the housing 1, the disassembly assembly includes a screw 4, the heat dissipation block 31 is provided with a screw hole adapted to the screw 4, and the heat conduction block 21 is provided with a through hole for the screw 4 to pass through. The screw 4 passes through the through hole and is threadedly connected to the screw hole. The operator first places the cold surface of the semiconductor power generation chip 10 on the heat dissipation block 31, and then places the heat conduction block 21 on the hot surface of the semiconductor power generation chip 10. The semiconductor power generation chip 10 does not block the through hole and the screw hole. Then, the screw 4 passes through the through hole of the heat conduction block 21 and is screwed into the screw hole on the heat dissipation block 31, and is gradually tightened by the mutual engagement of the threads to complete the fastening connection between the heat dissipation block 31 and the heat conduction block 21. At the same time, the heat dissipation block 31 and the heat conduction block 21 also clamp the semiconductor power generation chip 10. When it is necessary to separate the heat dissipation block 31 from the heat conduction block 21, only use a suitable tool to rotate the screw 4 counterclockwise to release the threaded connection, and the two components can be easily separated, which is convenient for maintenance, cleaning or replacement.

[0052] In some embodiments, the heat dissipation block 31 can be fixed on the housing 1, and the heat conduction block 21 is arranged at intervals above the housing 1.

[0053] In this embodiment, the resistance value of the load resistor 5 is the same as the internal resistance of the semiconductor power generation chip 10. It is required that the resistance value of the load resistor is the same as the internal resistance of the semiconductor power generation chip in order to measure the maximum output power of the power generation chip, including the maximum output power Pmax, the maximum load voltage Vmax and the maximum load current Imax. The semiconductor power generation chip will generate an open-circuit electromotive force E (open-circuit voltage U), and the semiconductor power generation chip 10 itself has an internal resistance r. Assuming that the load object of the power generation chip is a resistor R, in this circuit, the maximum power that the load resistor R can generate is equivalent to the maximum output power that the power generation chip can achieve. According to the circuit principle (Ohm's law), when the load resistor R = internal resistance r, the power (heat generation) of the load resistor is the largest, that is, the output of the power generation chip is the largest when tested.

[0054] The working principle of the power generation power test device for the semiconductor power generation chip 10 is as follows:

[0055] Before the test, place the semiconductor power generation chip 10 between the heat conducting block 21 and the cooling block. The heat conducting block 21 and the cooling block are fixed by screws 4. Connect the positive and negative electrodes of the semiconductor power generation chip 10 to the positive and negative electrodes of the ammeter 6 and the voltmeter 7 respectively, and connect a load resistor 5 with a resistance value equal to the internal resistance of the power generation chip in series in the middle.

[0056] Control the heating rod 23 to heat the heat conducting block 21 through the temperature controller 22, so as to heat the hot surface of the semiconductor power generation chip 10. Set the temperature of the heat conducting block 21 at a certain temperature, and dissipate heat from the cold surface of the semiconductor through the heat dissipation block 31 to generate and maintain a temperature difference. The temperature difference drives the carriers in the semiconductor material to move, forming an electric current, and this electric current flows through the load resistor 5.

[0057] The ammeter 6 monitors the current flowing through the power generation chip in real time, and the voltmeter 7 displays the voltage difference across the power generation chip. Using the measured current and voltage values, calculate the power generation power of the semiconductor power generation chip 10 according to the formula P = UI.

[0058] The first temperature sensor 8 is connected to the heat conducting block 21 and is used to monitor the temperature change of the hot surface of the semiconductor power generation chip 10 in real time. The second temperature sensor 9 is connected to the surface of the cooling block and is used to monitor the temperature of the cold surface of the semiconductor power generation chip 10 in real time, so as to test the power generation power of different models of semiconductor power generation chips 10 at different temperature differences.

[0059] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or terminal device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or terminal device. Without further limitation, elements defined by the statement "comprising..." or "including..." do not exclude the existence of additional elements in the process, method, article or terminal device comprising the said elements. In addition, in this article, "greater than", "less than", "exceeding" etc. are understood not to include the present number; "above", "below", "within" etc. are understood to include the present number.

[0060] Although the above-described embodiments have been described, those skilled in the art can make additional changes and modifications once they know the basic creative concept. Therefore, the above are only the embodiments of the present invention, and do not limit the patent protection scope of the present invention. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A semiconductor power generation chip power generation test device, characterized in that: It includes a housing, a heating mechanism, a heat dissipation mechanism, a disassembly component, a load resistor, an ammeter, a voltmeter, a first temperature sensor and a second temperature sensor; The heating mechanism includes a heater and a heat-conducting block, the heater is connected to the heat-conducting block, the heat dissipation mechanism includes a heat dissipation block, the heat dissipation block and the heat-conducting block are arranged side by side and at intervals, one of the heat-conducting block and the heat dissipation block is arranged on the outer shell, the heat-conducting block and the heat dissipation block are detachably connected through the disassembly component, the heat-conducting block and the heat dissipation block clamp the hot surface and the cold surface of the semiconductor power generation sheet, the load resistor and the ammeter are connected in series with the semiconductor power generation sheet, the voltmeter is connected in parallel with the load resistor, the ammeter and the voltmeter are arranged on the outer shell, the first temperature sensor is connected to the heat-conducting block, and the second temperature sensor is connected to the heat dissipation block.

2. The semiconductor power generation chip power generation test device according to claim 1, characterized in that: The heat conducting block is provided with a first embedding groove, in which the first temperature sensor is embedded, and the heat dissipating block is provided with a second embedding groove, in which the second temperature sensor is embedded.

3. The semiconductor power generation chip power generation test device according to claim 2, characterized in that: A first embedding groove is provided on the side of the heat conductive block that contacts the semiconductor power generation chip, and the first temperature sensor is flush with the side of the heat conductive block that contacts the semiconductor power generation chip. A second embedding groove is provided on the side of the heat dissipation block that contacts the semiconductor power generation chip, and the second temperature sensor is flush with the side of the heat dissipation block that contacts the semiconductor power generation chip.

4. The semiconductor power generation chip power generation test device according to claim 2, characterized in that: The first temperature sensor and the second temperature sensor are thermocouple sensors.

5. The semiconductor power generation chip power generation test device according to claim 1, characterized in that: The heater comprises a temperature controller and a heating rod, wherein the temperature controller is connected to the heating rod, and the heating rod is connected to the heat conducting block.

6. The semiconductor power generation chip power generation test device according to any one of claims 1 to 5, characterized in that: The heat conducting block is an aluminum block.

7. The semiconductor power generation chip power generation test device according to claim 1, characterized in that: The heat dissipation mechanism also includes a fan, which is arranged in the housing and faces the heat dissipation block.

8. The semiconductor power generation chip power generation test device according to claim 1, characterized in that: The heat dissipation block is arranged on the shell, the heat conductive block is located above the shell, the disassembly assembly includes a screw, the heat dissipation block is provided with a screw hole adapted to the screw, the heat conductive block is provided with a through hole for the screw to pass through, and the screw passes through the through hole and is threadedly connected to the screw hole.

9. The semiconductor power generation chip power generation test device according to claim 1, characterized in that: The resistance value of the load resistor is the same as the internal resistance of the semiconductor power generation chip.

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