Perovskite solar cell

Abstract

The utility model discloses a perovskite solar cell, which relates to the technical field of perovskite solar power generation and comprises a composite electron transport layer which comprises an organic electron transport layer, a coupling agent layer and an inorganic electron transport layer. Wherein a plug-in structure is formed between the organic electron transport layer and the coupling agent layer. According to the composite electron transport layer structure of the perovskite solar cell, the adhesive force between the organic electron transport layer and the inorganic electron transport layer is enhanced, the film falling phenomenon is effectively avoided, the stability and the photoelectric conversion efficiency of the perovskite cell are further improved, and the preparation cost is low.

Description

Technical Field

[0001] The utility model relates to the technical field of perovskite solar power generation, in particular to a perovskite solar cell. Background Art

[0002] Perovskite solar cells have developed rapidly in recent years, with advantages such as adjustable optical band gap, long carrier diffusion length, high photoelectric conversion efficiency and low manufacturing cost. Compared with traditional solar cells, perovskite solar cells have great room for improving photoelectric conversion efficiency and reducing production costs, and are expected to become a new generation of commercial solar cells.

[0003] The common inverted structure of perovskite solar cells includes: conductive substrate, hole transport layer, perovskite absorption layer, electron transport layer, and back electrode. The electron transport layer is an important component of the inverted structure perovskite cell, which is used to capture the excited electrons in the absorption layer and send them to the external circuit, while blocking the holes in the absorption layer to improve the photoelectric conversion efficiency of the cell. The electron transport layer of the inverted structure perovskite solar cell mainly includes pure inorganic metal oxide electron transport layer and pure organic electron transport layer. The pure inorganic metal oxide electron transport layer has poor energy level matching with the perovskite absorption layer and poor film surface adhesion. At the same time, the general preparation temperature of metal oxides is high and the particle energy is large, which will have an adverse effect on the perovskite absorption layer during the preparation process, thereby reducing the photoelectric conversion efficiency; the pure organic electron transport layer has good energy level matching and adhesion with the perovskite absorption layer, but has poor adhesion with the latter inorganic film layer, which is easy to cause film peeling, affecting the stability, photoelectric conversion efficiency and overall performance of the perovskite solar cell.

[0004] Therefore, it is urgent to develop an electron transport layer for perovskite solar cells that can both improve the photoelectric conversion efficiency and enhance the film surface adhesion. Utility Model Content

[0005] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model proposes a perovskite solar cell, which has a composite electron transport layer structure, an organic electron transport layer and an inorganic electron transport layer with improved adhesion, effectively avoids the film shedding phenomenon, effectively improves the stability and photoelectric conversion efficiency of the perovskite cell, and has a low preparation cost.

[0006] The utility model proposes a perovskite solar cell. It comprises: a composite electron transport layer, the composite electron transport layer comprises: an organic electron transport layer, a coupling agent layer and an inorganic electron transport layer; wherein an intercalation structure is formed between the organic electron transport layer and the coupling agent layer. The composite electron transport layer structure of the perovskite solar cell of the utility model has enhanced adhesion between the organic electron transport layer and the inorganic electron transport layer, effectively avoiding the occurrence of film shedding, further improving the stability and photoelectric conversion efficiency of the perovskite cell, and has low preparation cost.

[0007] According to an embodiment of the utility model, the organic electron transport layer includes a preset number of protrusion structures, and embedded grooves are formed between several of the protrusion structures. The coupling agent layer covers the organic electron transport layer, and the coupling agent layer includes several embedded structures that are plugged into and matched with the embedded grooves. The embedded grooves and the embedded structures form the plug-in structure.

[0008] Furthermore, the protrusion structures are arranged in an array.

[0009] Furthermore, the array is a dot array or a strip-spaced array.

[0010] Furthermore, the height of the embedded structure is the same as the thickness of the organic electron transport layer.

[0011] Furthermore, it also includes: an organic passivation layer and a perovskite layer, wherein the organic passivation layer is disposed between the perovskite layer and the composite electron transport layer, and the embedded structure is connected to the organic passivation layer. Through the embedded structure penetrating the organic electron transport layer, the organic passivation layer and the coupling agent layer are connected, thereby further effectively avoiding the film shedding phenomenon.

[0012] Furthermore, the organic passivation layer is any one of a polymethyl methacrylate layer, a 1-thia-2,4-cyclopentadiene layer and a pyridine layer.

[0013] In some embodiments, at least one of the following features is included:

[0014] (1) The coupling agent layer is a silane coupling agent layer;

[0015] (2) The organic electron transport layer is a fullerene layer or a fullerene derivative layer;

[0016] (3) The inorganic electron transport layer is a metal oxide layer.

[0017] Furthermore, it includes at least one of the following features:

[0018] (1) The silane coupling agent layer is any one of a γ-(2,3-epoxypropyloxy)propyltrimethoxysilane layer, a 3-aminopropyltriethoxysilane layer, a γ-methacryloxypropyltrimethoxysilane layer and a N-(β-aminoethyl)-γ-aminopropyltrimethoxy(ethyl)silane layer;

[0019] (2) The fullerene derivative layer is a BCP layer, a C60 layer and a PC layer. 61 Any one of the BM layers;

[0020] (3) The inorganic electron transport layer is SnO x , IZO layer, or ICO layer.

[0021] In some embodiments, at least one of the following features is included:

[0022] (1) The thickness of the organic electron transport layer is 10nm to 35nm;

[0023] (2) The thickness of the coupling agent layer is 10nm to 15nm;

[0024] (3) The thickness of the inorganic electron transport layer is 40nm to 60nm.

[0025] In some embodiments, the perovskite solar cell is arranged in order from bottom to top: a conductive substrate, a hole transport layer, the perovskite layer, the organic passivation layer, the composite electron transport layer, and a back electrode layer.

[0026] Compared with the prior art, the beneficial effects achieved by the utility model are:

[0027] The perovskite solar cell disclosed in the utility model comprises: an organic electron transport layer-a silane coupling agent layer-an inorganic electron transport layer, and a composite electron transport layer with an intercalation structure is formed between the organic electron transport layer and the coupling agent layer. Compared with the traditional electron transport layer, the composite electron transport layer greatly improves the technical problems of poor adhesion and easy detachment between the upper and lower film layers, effectively improves the stability and photoelectric conversion efficiency of the perovskite cell, and has a low preparation cost.

[0028] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a schematic diagram of the structure of a perovskite battery according to an embodiment of the utility model;

[0030] Figure 2 yes Figure 1 Schematic diagram of the structure of the composite electron transport layer shown in .

[0031] Reference numerals:

[0032] Conductive substrate 10 , hole transport layer 20 , perovskite layer 30 , organic passivation layer 40 , composite electron transport layer 50 , organic electron transport layer 51 , coupling agent layer 52 , inorganic electron transport layer 53 , buffer layer 60 , back electrode layer 70 . DETAILED DESCRIPTION

[0033] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0034] The disclosure below provides many different embodiments or examples for realizing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the utility model. In addition, the utility model can repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the applicability of other processes and / or the use of other materials.

[0035] In the description of the present invention, it is necessary to understand that the terms "thickness", "upper", "lower", "diameter", etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0036] In the description of the present invention, "plurality" means two or more than two, unless otherwise clearly and specifically defined.

[0037] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0039] In this article, the term "inter-component structure" refers to a structure that achieves connection between components through complementary geometric shapes, wherein the first component has at least one protruding feature and the second component has at least one corresponding recessed feature. The protruding feature and the recessed feature are embedded in each other to form a mechanical interlock, thereby providing a stable connection between the two components without the need for additional fixing elements. In the utility model perovskite solar cell, the adhesion between the organic electron transport layer and the inorganic electron transport layer is enhanced by the inter-component structure, thereby improving the stability of the perovskite solar cell.

[0040] In this article, the term "dot array" refers to a geometric arrangement of repeated dots, which are distributed in a two-dimensional plane according to certain rules and intervals. For example, the specific forms of the dot array include but are not limited to: square dot array, hexagonal dot array, triangular dot array, random dot array.

[0041] In this article, the term "strip-pitch array" refers to a linear structure arrangement with regular spacing, in which elements (which may be strips, lines, protrusions or grooves, etc.) are repeatedly arranged at a certain spacing and direction. Exemplarily, the specific forms of the strip-pitch array include but are not limited to: parallel strips, staggered strips, and multiple rows of strips.

[0042] In this article, the term "silane coupling agent" refers to a silicon-based chemical molecule that contains inorganic reactivity and organic reactivity in the same molecule, usually with a typical structure of: Rn-Si-(X) 4-n ; Wherein, R is an organic functional group such as amino, methacryloxy, epoxy, etc., and X is an alkoxy group such as methoxy, ethoxy or acetoxy, etc. When the silane coupling agent is between the inorganic and organic interfaces, a bonding layer of an organic matrix-silane coupling agent-inorganic matrix can be formed. Any one of γ-(2,3-epoxypropoxy)propyltrimethoxysilane, 3-aminopropyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane, and N-(β-aminoethyl)-γ-aminopropyltrimethoxy(ethyl)silane is selected, and the solvent can be acetone, benzene, ether, or carbon tetrachloride.

[0043] In this article, the term "NiO x" is nickel oxide, "x" represents the proportion of oxygen, which can be different values, the common ones are NiO (nickel (II) oxide) and Ni 2 O 3 (Nickel(III) oxide).

[0044] Next, we will combine the attached Figures 1-2 , the perovskite solar cell of the utility model is described.

[0045] like Figure 2 As shown, the perovskite solar cell includes: a composite electron transport layer 50 , and the composite electron transport layer 50 includes: an organic electron transport layer 51 , a coupling agent layer 52 and an inorganic electron transport layer 53 .

[0046] like Figures 1-2 As shown, the perovskite solar cell according to the utility model includes: a composite electron transport layer 50, the composite electron transport layer 50 includes: an organic electron transport layer 51, a coupling agent layer 52 and an inorganic electron transport layer 53; wherein, an intercalation structure is formed between the organic electron transport layer 51 and the coupling agent layer 52.

[0047] According to the perovskite solar cell of the utility model, an intercalation structure is provided in the composite electron transport layer to improve the adhesion between the organic electron transport layer and the inorganic electron transport layer, thereby effectively avoiding the occurrence of film shedding, further improving the stability and photoelectric conversion efficiency of the perovskite cell, and having a low preparation cost.

[0048] like Figure 2 As shown, in some embodiments of the present invention, the organic electron transport layer 51 includes a preset number of protrusion structures, and embedded grooves are formed between the plurality of protrusion structures. The coupling agent layer 52 covers the organic electron transport layer 51, and the coupling agent layer 52 includes a plurality of embedded structures that are plugged into the embedded grooves, and the embedded grooves and the embedded structures form a plug-in structure.

[0049] like Figure 2 As shown, in some specific embodiments of the present invention, the protrusion structures are arranged in an array.

[0050] In some more specific embodiments, the array is a dot array or a stripe pitch array.

[0051] In some more specific embodiments, the protruding structure is cylindrical.

[0052] In some specific embodiments of the present invention, the height of the embedded structure is the same as the thickness of the organic electron transport layer 51 .

[0053] like Figure 2As shown, in some specific embodiments of the present invention, it also includes: an organic passivation layer 40 and a perovskite layer 30, the organic passivation layer 40 is arranged between the perovskite layer 30 and the composite electron transport layer 50, and the embedded structure is connected to the organic passivation layer 40. In this way, through the embedded structure that penetrates the organic electron transport layer, the organic passivation layer and the coupling agent layer are connected, which further effectively avoids the film shedding phenomenon.

[0054] In some more specific embodiments, the organic passivation layer 40 is any one of a polymethyl methacrylate layer, a 1-thia-2,4-cyclopentadiene layer, and a pyridine layer.

[0055] In some embodiments of the present invention, at least one of the following features is included:

[0056] (1) The coupling agent layer 52 is a silane coupling agent layer 52;

[0057] (2) The organic electron transport layer 51 is a fullerene layer or a fullerene derivative layer;

[0058] (3) The inorganic electron transport layer 53 is a metal oxide layer.

[0059] In some specific embodiments of the present invention, at least one of the following features is included:

[0060] (1) The silane coupling agent layer 52 is any one of a γ-(2,3-epoxypropyloxy)propyltrimethoxysilane layer, a 3-aminopropyltriethoxysilane layer, a γ-methacryloxypropyltrimethoxysilane layer and a N-(β-aminoethyl)-γ-aminopropyltrimethoxy(ethyl)oxysilane layer;

[0061] (2) The fullerene derivative layer is any one of a BCP layer, a C60 layer and a PC61BM layer;

[0062] (3) The inorganic electron transport layer 53 is any one of SnOx, IZO layer, and ICO layer.

[0063] In some embodiments of the present invention, at least one of the following features is included:

[0064] (1) The thickness of the organic electron transport layer 51 is 10 nm to 35 nm;

[0065] (2) The thickness of the coupling agent layer 52 is 10nm to 15nm;

[0066] (3) The thickness of the inorganic electron transport layer 53 is 40 nm to 60 nm.

[0067] like Figures 1-2As shown, in some embodiments of the present invention, the perovskite solar cell is arranged in order from bottom to top: a conductive substrate 10, a hole transport layer 20, a perovskite layer 30, an organic passivation layer 40, a composite electron transport layer 50, and a back electrode layer 70.

[0068] In some embodiments, the conductive substrate 10 includes a transparent conductive oxide plasma treated layer.

[0069] In some specific embodiments, the thickness of the hole transport layer 20 is 20 nm to 40 nm, preferably 30 nm.

[0070] In some specific embodiments, the hole transport layer 20 is NiO x layer, CuSCN layer, MoO 3 Layer, V 2 O 5 Layer or WO 3 layer.

[0071] In some specific embodiments, the thickness of the back electrode layer 70 is 40 nm to 60 nm, preferably 50 nm.

[0072] In some specific embodiments, the back electrode layer 70 is a Cu metal layer, a Ti metal layer, an Au metal layer, a Mo metal layer, or one or more layers of a Cu / Ti metal layer, a Cu / Au metal layer, a Cu / Mo metal layer, a Ti / Au metal layer, a Ti / Mo metal layer, and an Au / Mo metal layer.

[0073] like Figure 1 As shown, in some embodiments of the present invention, the perovskite solar cell further includes: a buffer layer 60 , and the buffer layer 60 is disposed between the composite electron transport layer 50 and the back electrode layer 70 .

[0074] In some specific embodiments, the thickness of the buffer layer 60 is 20 nm to 40 nm, preferably 30 nm.

[0075] In some specific embodiments, the buffer layer 60 is an indium tin oxide layer or a tungsten-doped indium oxide layer.

[0076] In some specific embodiments of the present invention, the silane coupling agent solution is spin-coated onto the organic electron transport layer 51 by spin coating. Specifically, the process includes: firstly pre-spin coating the silane coupling agent solution at a speed of 1000 r / min for 5 seconds, so that the silane coupling agent solution is initially covered on the organic electron transport layer 51; then, the formal spin coating is performed at a speed of 5000 r / min for 40 to 60 seconds, so that the silane coupling agent solution fully enters the gaps between the cylindrical protrusion structures. Thus, the gaps in the organic electron transport layer 51 are filled, and the gaps between the material molecules forming the organic electron transport layer 51 are fully filled.

[0077] In some specific embodiments of the present invention, thermal evaporation is used to deposit and form the organic electron transport layer 51. The vacuum degree of the chamber is ≤2×10 4Pa, and the evaporation rate is Preferably During the evaporation coating, a FMM (metal mask) is used to allow the organic electron transport layer 51 to be uniformly and discontinuously deposited on the passivation layer 40 .

[0078] Exemplarily, the material molecules forming the organic electron transport layer 51 include but are not limited to: fullerene materials or fullerene derivative materials.

[0079] In some specific embodiments of the present invention, a mask is used to control the shape of the organic electron transport layer 51 in a thermal evaporation process. For example, a cylindrical protrusion structure is formed on the organic electron transport layer 51 to achieve a tight connection between the organic electron transport layer 51 and the silane coupling agent layer 52 covering the organic electron transport layer 51.

[0080] In some more specific embodiments, the height of the cylindrical protrusion structure is the thickness of the film layer, and the diameter is 1.0 μm to 5.0 μm.

[0081] In some specific embodiments, RPD (reactive plasma coating equipment) is used to deposit and form an inorganic electron transport layer 53. This coating method can control the ion energy below 30ev, and the substrate temperature can be controlled below 100°C to avoid damage to the perovskite absorption layer. At the same time, the film layer deposited by RPD is more evenly distributed and dense. The ion gun current is 130A, the ion gun is fed with argon gas at 60sccm, the chamber is fed with argon gas at 840sccm, the chamber is fed with oxygen at 20sccm, and the chamber pressure is maintained at 0.6Pa. On the silane coupling agent layer 52, a 40nm to 60nm inorganic electron transport layer 53 is deposited.

[0082] In some specific embodiments of the present invention, ITO (indium tin oxide) or FTO (fluorine-doped tin oxide) is selected as a transparent conductive oxide, and the conductive substrate 10 is plasma-treated (protonated) to enhance the surface cleanliness of the conductive substrate and improve the interface contact between the conductive substrate 10 and the hole transport layer 20.

[0083] In some specific embodiments of the present invention, NiO is selected x 、CuSCN、MoO 3 、V 2 O 5 , WO 3 Any of the materials in the above were deposited by magnetron sputtering with a target power density of 1.3 W / cm2 , the argon gas flow rate is 120sccm, the gas pressure is 0.2Pa, and a 30nm hole transport layer 20 material is deposited on the conductive substrate 10; or a spin coating method is used to spin coat any one of the solutions of PTAA (polytriarylamine), PEDOT:PSS (poly(ethylenedioxythiophene) polystyrene sulfonate), and poly-TPD (4-butyl-N,N-diphenylaniline homopolymer) at a speed of 4000r / min for 30s to deposit a 30nm hole transport layer 20 material on the conductive substrate 10 to form a hole transport layer 20.

[0084] In some specific embodiments of the present invention, DMF (N, N-dimethylformamide) is used as a solvent to fully dissolve a certain proportion of methylammonium chloride, iodine methyl ether and lead iodide to form MAPbI 3 The MAPbI solution was spin-coated 3 The solution is spin-coated at a speed of 4000 r / min for 30 seconds to deposit a 500nm thick perovskite layer 30 material on the hole transport layer 20; or the perovskite solution is coated on the hole transport layer 20 by a slit coating method at a liquid outlet speed of 120ul / s and a liquid outlet angle of 5deg, and VCD vacuuming is performed to promote perovskite nucleation and remove impurities, and then annealing is performed at 100°C for 30 minutes to promote perovskite crystallization, and a 500nm thick perovskite layer 30 material is deposited on the hole transport layer 20.

[0085] In some specific embodiments of the present invention, the organic passivation layer 40 can passivate the trap states on the surface and grain boundaries of the perovskite. Any one of the passivation materials of PMMA (polymethyl methacrylate), thiophene (1-thia-2,4-cyclopentadiene), and pyridine is selected, and the passivation solution is coated on the perovskite layer 30 by a slit coating method at a liquid outlet rate of 50ul / s and a liquid outlet angle of 5deg. The surface is vacuum dried by VCD, and annealed at 100°C for 10 minutes to obtain the organic passivation layer 40.

[0086] In some specific embodiments of the present invention, one of ITO (indium tin oxide) and IWO (tungsten-doped indium oxide) is selected as the material of the buffer layer 60, and RPD (reactive plasma coating equipment) is used for deposition, the ion gun current is 160A, the ion gun is fed with argon gas of 60sccm, the chamber is fed with argon gas of 840sccm, the chamber pressure is maintained at 0.5Pa, and a 30nm buffer layer 60 is deposited on the inorganic electron transport layer 53. Alternatively, magnetron sputtering is used for deposition, the target power density is 2.6KW / m, the argon gas flow rate is 200sccm, the oxygen flow rate is 80sccm, and the gas pressure is 0.3Pa, and a 30nm buffer layer 60 is deposited on the inorganic electron transport layer 53.

[0087] In some specific embodiments of the present invention, any one or two materials of Cu, Ti, Au, and Mo are selected and deposited by magnetron sputtering. The power density is 0.8 KW / m, the argon gas flow rate is 500 sccm, the gas pressure is 0.5 Pa, and a 50 nm back electrode layer 70 is deposited on the buffer layer 60.

[0088] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0089] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A perovskite solar cell, characterized in that: include: A composite electron transport layer, the composite electron transport layer comprising: an organic electron transport layer, a coupling agent layer and an inorganic electron transport layer; Wherein, an intercalation structure is formed between the organic electron transport layer and the coupling agent layer.

2. The perovskite solar cell according to claim 1, characterized in that The organic electron transport layer includes a preset number of protrusion structures, and embedded grooves are formed between several of the protrusion structures. The coupling agent layer covers the organic electron transport layer, and the coupling agent layer includes several embedded structures that are plugged into and matched with the embedded grooves. The embedded grooves and the embedded structures form the plug-in structure.

3. The perovskite solar cell according to claim 2, characterized in that: The protruding structures are arranged in an array.

4. The perovskite solar cell according to claim 2, characterized in that: The height of the embedded structure is the same as the thickness of the organic electron transport layer.

5. The perovskite solar cell according to claim 4, characterized in that: Also includes: An organic passivation layer and a perovskite layer, wherein the organic passivation layer is arranged between the perovskite layer and the composite electron transport layer, and the embedded structure is connected to the organic passivation layer.

6. The perovskite solar cell according to claim 5, characterized in that: The organic passivation layer is any one of a polymethyl methacrylate layer, a 1-thia-2,4-cyclopentadiene layer and a pyridine layer.

7. The perovskite solar cell according to claim 1, characterized in that: Includes at least one of the following features: (1) The coupling agent layer is a silane coupling agent layer; (2) The organic electron transport layer is a fullerene layer or a fullerene derivative layer; (3) The inorganic electron transport layer is a metal oxide layer.

8. The perovskite solar cell according to claim 7, characterized in that: Includes at least one of the following features: (1) The silane coupling agent layer is any one of a γ-(2,3-epoxypropyloxy)propyltrimethoxysilane layer, a 3-aminopropyltriethoxysilane layer, a γ-methacryloxypropyltrimethoxysilane layer and a N-(β-aminoethyl)-γ-aminopropyltrimethoxy(ethyl)silane layer; (2) The fullerene derivative layer is a BCP layer, a C60 layer and a PC layer. 61 Any one of the BM layers; (3) The inorganic electron transport layer is SnO x , IZO layer, or ICO layer.

9. The perovskite solar cell according to claim 1, characterized in that: Includes at least one of the following features: (1) The thickness of the organic electron transport layer is 10nm to 35nm; (2) The thickness of the coupling agent layer is 10nm to 15nm; (3) The thickness of the inorganic electron transport layer is 40nm to 60nm.

10. The perovskite solar cell according to claim 5, characterized in that: The perovskite solar cell is sequentially arranged from bottom to top: a conductive substrate, a hole transport layer, the perovskite layer, the organic passivation layer, the composite electron transport layer, and a back electrode layer.

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