Perovskite coating and drying device
By distributing multiple ventilation holes on the second end side wall of the pipe assembly of the perovskite coating and drying device, the problems of high processing difficulty and manufacturing cost of existing equipment are solved, and the uniformity of evaporation rate at each point on the substrate is achieved and the consistency of the crystallization is improved, and the film quality is improved.
Patent Information
- Application Number
- CN202421446381.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-24
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-06-24
AI Technical Summary
The existing perovskite battery vacuum drying equipment is difficult to achieve uniformity of the evaporation rate at each point on the substrate due to complex processing technology and high manufacturing cost.
A perovskite coating drying device is designed to ensure uniformity of gas flow by uniformly distributing multiple vents on the second end side wall of the pipeline assembly instead of the vents on the laminar flow plate.
The evaporation rate balance is achieved at each point on the substrate, ensuring the consistency of crystallization, improving the quality of the perovskite film, and simplifying the device structure, reducing processing difficulty and manufacturing cost.
Smart Images
Figure CN222919006U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of perovskite battery vacuum drying, in particular to a perovskite coating drying device. Background Technique
[0002] VCD (Vacuum Concentration Drying), that is, vacuum drying equipment, is one of the core equipment for perovskite slot coating. Its structure is generally a cuboid closed cavity. After the coated substrate is placed in the cavity, the air pressure in the cavity is reduced by pumping vacuum, so that the liquid film on the substrate surface evaporates rapidly, making the perovskite liquid film quickly enter the supersaturated state, and then quickly nucleate to achieve uniform crystal growth. After the perovskite liquid film enters the VCD cavity and evaporates a part of the solvent, once it enters the saturated state or supersaturated state, the nucleation and crystal growth processes will start simultaneously. By adjusting the solvent evaporation rate, the nucleation and crystal growth processes can be controlled and adjusted. Generally, a fast evaporation rate can accelerate nucleation, reduce the coexistence time of nucleation and crystal growth, and then achieve that the nucleation rate is much greater than the crystal growth rate. After uniform nucleation, slow crystal growth can be carried out by heating and annealing. Since crystal growth is based on nucleation, the crystal growth process can be controlled. In order to obtain a good perovskite thin film, VCD needs to meet two key conditions: rapid solvent evaporation and balanced evaporation rates at each point on the substrate.
[0003] In the prior art, a vacuum pump evacuates the cavity through a pipeline, and by increasing the pumping power, the solvent evaporates rapidly. In order to make the evaporation rates at each point on the substrate balanced, a laminar flow plate is usually arranged between the pipeline and the substrate, and a plurality of ventilation holes are arranged on the laminar flow plate to make the gas flow more uniform, thereby improving the balance of evaporation rates at each point on the substrate. However, the processing technology of the laminar flow plate is complex and the manufacturing cost is high, which further increases the processing difficulty and manufacturing cost of the vacuum drying equipment.
[0004] How to reduce the processing difficulty and manufacturing cost of the vacuum drying equipment is an urgent problem to be solved. Summary of the Invention
[0005] The purpose of the utility model is to provide a perovskite coating drying device, which not only ensures the uniformity of gas flow, makes the evaporation rates at each point on the substrate balanced, but also does not require an additional laminar flow plate, simplifies the structure of the perovskite coating drying device, reduces the volume and weight of the perovskite coating drying device, and also reduces the processing difficulty and manufacturing cost of the perovskite coating drying device.
[0006] The purpose of the utility model is achieved by the following technical solutions:
[0007] A perovskite coating drying device, comprising:
[0008] A box body, the box body having a vacuum chamber for placing a substrate;
[0009] A pipeline assembly, a first end of the pipeline assembly being connected to a vacuum pump, a second end of the pipeline assembly being communicated with the vacuum chamber, and a plurality of ventilation holes being uniformly distributed on a side wall of the second end of the pipeline assembly.
[0010] Preferably, the first end of the pipeline assembly includes at least one first-stage pipeline connected to the vacuum pump, the second end of the pipeline assembly includes a plurality of final-stage pipelines communicated with the vacuum chamber, a plurality of the ventilation holes being uniformly distributed on a side wall of each final-stage pipeline, and the distance from each final-stage pipeline to the first-stage pipeline being equal.
[0011] Preferably, the plurality of final-stage pipelines are uniformly distributed in the vacuum chamber.
[0012] Preferably, the pipeline assembly further includes a second-stage pipeline and a third-stage pipeline that are sequentially communicated, the second-stage pipeline being communicated with the first-stage pipeline, and the third-stage pipeline being communicated with the final-stage pipeline.
[0013] Preferably, twenty-four of the ventilation holes are provided on each final-stage pipeline, wherein the twenty-four ventilation holes are evenly divided into three groups, each group of eight ventilation holes being uniformly distributed along the circumferential direction of the final-stage pipeline, and the three groups of ventilation holes being uniformly distributed along the axial direction of the final-stage pipeline.
[0014] Preferably, the distance between adjacent groups of the ventilation holes is 30-50 mm, the distance from the ventilation holes to a side of the final-stage pipeline facing the substrate is 18-28 mm, and the aperture of the ventilation holes is 15-25 mm.
[0015] Preferably, a side of the second end of the pipeline assembly facing the substrate is a sealed structure so that gas enters the pipeline assembly through the ventilation holes.
[0016] Preferably, a through hole is provided at the top of the box body, the second end of the pipeline assembly enters the vacuum chamber through the through hole, and the pipeline assembly and the box body can move relative to each other to adjust the distance between the second end of the pipeline assembly and the substrate.
[0017] Preferably, a carrier assembly is further included, the carrier assembly including a carrier table provided in the vacuum chamber and used for carrying the substrate.
[0018] Preferably, the carrier assembly further includes a driving mechanism for adjusting the height of the carrier table to adjust the distance from the substrate to the second end of the pipeline assembly.
[0019] Compared with the prior art, the beneficial effects of the present utility model at least include:
[0020] In the perovskite coating drying device of the present utility model, a plurality of ventilation holes are evenly distributed on the side wall of the second end of the pipeline assembly to replace the ventilation holes provided on the laminar flow plate. When the vacuum pump works, gas enters the pipeline assembly from the plurality of ventilation holes, which not only improves the uniformity of gas flow, makes the evaporation rates at each point on the substrate balanced, thus ensuring that the crystal growth at each point on the substrate is more consistent, improving the quality of the perovskite thin film, but also does not require an additional laminar flow plate, simplifies the structure of the perovskite coating drying device, reduces the volume and weight of the perovskite coating drying device, and also reduces the processing difficulty and manufacturing cost of the perovskite coating drying device. Description of the Drawings
[0021] Figure 1 is an exploded view of the structure of a perovskite coating drying device according to an embodiment of the present utility model.
[0022] Figure 2 is a three-dimensional structure schematic diagram of a perovskite coating drying device according to an embodiment of the present utility model.
[0023] Figure 3 is a planar structure schematic diagram of a perovskite coating drying device according to an embodiment of the present utility model.
[0024] Figure 4 is Figure 3 a sectional view along the A-A direction.
[0025] Figure 5 is Figure 4 a partial enlarged view at B in
[0026] Figure 6 is a partial three-dimensional structure schematic diagram of another perovskite coating drying device according to an embodiment of the present utility model.
[0027] Figure 7 is a gas flow direction diagram corresponding to two final-stage pipelines in an embodiment of the present utility model.
[0028] In the figure: 100, perovskite coating drying device; 1, box body; 11, top; 111, through hole; 12, side part; 13, bottom; 14, upper box body; 15, vacuum chamber; 2, pipeline assembly; 21, first end; 22, second end; 221, side wall; 2211, ventilation hole; 23, primary pipeline; 24, secondary pipeline; 25, tertiary pipeline; 26, final-stage pipeline; 261, sealing structure; 200, substrate. Detailed Embodiments
[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this utility model will be more complete and comprehensive, and the concept of the example embodiments will be fully conveyed to those skilled in the art. Identical reference numerals in the figures denote identical or similar structures, and thus their repetitive description will be omitted.
[0030] In the present utility model, the words describing positions and directions are all illustrated by taking the accompanying drawings as examples, but can be changed according to needs, and all the changes made are included in the protection scope of the present utility model.
[0031] Referring to Figures 1 to 6 , the present utility model provides a perovskite coating drying device 100, including: a box body 1 and a pipeline assembly 2. One end of the pipeline assembly 2 is communicated with the box body 1 and is provided with a plurality of ventilation holes 2211. The perovskite coating drying device 100 may further include a carrying assembly (not shown) disposed in the box body 1, and the carrying assembly is used for carrying a substrate 200.
[0032] Specifically, referring to Figure 1 , Figure 2 , Figure 4 , the box body 1 is generally rectangular as a whole, and the box body 1 has a vacuum chamber 15 for placing the substrate 200. A liquid film formed by a perovskite solution is coated on the surface of the substrate 200. By means of vacuum pumping, the air pressure in the vacuum chamber 15 is reduced, so that the solvent in the liquid film quickly volatilizes and is pumped out by a vacuum pump (not shown) along with the gas, enabling the liquid film to quickly enter a supersaturated state and then quickly nucleate, thereby realizing uniform crystal growth.
[0033] As a preferred mode, referring to Figure 1 , Figure 2 , Figure 4 , the box body 1 may include a top 11, a plurality of sides 12 and a bottom 13. The top 11, the plurality of sides 12 and the bottom 13 together enclose to form the vacuum chamber 15. In this embodiment, the plurality of sides 12 are connected end to end around the top 11, that is, the plurality of sides 12 and the top 11 are preferably fixedly connected to form an upper box body 14. One end of the side 12 away from the top 11 is preferably movably connected to the bottom 13. In this way, when the upper box body 14 is connected to the bottom 13, a sealed vacuum chamber 15 is formed. When the upper box body 14 is separated from the bottom 13, it is convenient to place the substrate 200 in the vacuum chamber 15. In some embodiments, the side 12 is generally L-shaped, which can increase the contact area between the side 12 and the bottom 13. This can not only make the position of the upper box body 14 more stable, prevent the upper box body 14 from tilting or tipping over, but also improve the sealing performance of the vacuum chamber 15 and avoid air leakage when the vacuum pump is working.
[0034] Reference Figure 1 and Figure 4 , the first end 21 of the pipe assembly 2 is connected to a vacuum pump, the second end 22 of the pipe assembly 2 communicates with the vacuum chamber 15, and a plurality of ventilation holes 2211 are uniformly distributed on the side wall 221 of the second end 22 of the pipe assembly 2, that is, the plurality of ventilation holes 2211 are arranged in the vacuum chamber 15. Specifically, the second end 22 of the pipe assembly 2 is arranged on the top 11 of the box body 1, that is, the second end 22 of the pipe assembly 2 communicates with the vacuum chamber 15 through the top 11 of the box body 1. A through hole 111 is arranged on the top 11 of the box body 1, and the second end 22 of the pipe assembly 2 enters the vacuum chamber 15 through the through hole 111. The vacuum pump extracts the gas in the vacuum chamber 15 through the pipe assembly 2, and the solvent evaporated from the liquid film is extracted together with the gas. As the air pressure in the vacuum chamber 15 decreases, it further promotes the evaporation rate of the solvent in the liquid film, and thus speeds up the evaporation rate of the solvent in the liquid film.
[0035] In this application, a plurality of ventilation holes 2211 are uniformly distributed on the side wall 221 of the second end 22 of the pipe assembly 2 to replace the ventilation holes 2211 arranged on the laminar flow plate. When the vacuum pump works, the gas enters the pipe assembly 2 from the plurality of ventilation holes 2211, which not only improves the uniformity of gas flow, makes the evaporation rates of all points on the substrate 200 balanced, thus ensuring that the crystal growth of all points on the substrate 200 is more consistent and improving the quality of the perovskite thin film, but also does not require an additional laminar flow plate, simplifies the structure of the perovskite coating drying device 100, reduces the volume and weight of the perovskite coating drying device 100, and also reduces the processing difficulty and manufacturing cost of the perovskite coating drying device 100.
[0036] In a specific embodiment, reference is made to Figure 1 and Figure 2 and Figure 4 and Figure 6, the pipeline component 2 preferably includes multiple levels of pipelines connected in sequence. The first end 21 of the pipeline component 2 includes at least one first-level pipeline 23, and the first-level pipeline 23 is connected to a vacuum pump. The second end 22 of the pipeline component 2 includes multiple last-level pipelines 26, and the last-level pipelines 26 are connected to the vacuum chamber 15. The first-level pipeline 23 and the last-level pipelines 26 are interconnected. A plurality of vent holes 2211 are evenly distributed on the side wall 221 of each last-level pipeline 26, and the number of vent holes 2211 provided on the side wall 221 of each last-level pipeline 26 is preferably the same. In this embodiment, the number of first-level pipelines 23 is one, and one first-level pipeline 23 is simultaneously connected to multiple last-level pipelines 26, that is, gas flows into the first-level pipeline 23 through multiple last-level pipelines 26 and is finally pumped away by the vacuum pump. The distance from each last-level pipeline 26 to the first-level pipeline 23 is equal, that is, the length of each last-level pipeline 26 is equal. In this way, the distance for gas to flow from each last-level pipeline 26 to the vacuum pump is equal, that is, the flow path is the same, so that the suction force of the vacuum pump on each last-level pipeline 26 is the same, which can ensure that the air pressure at each last-level pipeline 26 is more balanced, and further ensure that the evaporation rate of each point on the substrate 200 is balanced, thereby ensuring that the crystal growth of each point on the substrate 200 is more consistent and improving the quality of the perovskite thin film. It should be noted that the equal distance in the present invention means that compared with the designed distance, the actual distance deviates from the designed distance by no more than 10%, preferably no more than 5%, and more preferably no more than 2%.
[0037] As a preferred method, referring to Figure 1 , a plurality of last-level pipelines 26 are evenly distributed in the vacuum chamber 15, and a plurality of through holes 111 are also evenly provided on the top 11 of the box body 1. The number of through holes 111 is the same as the number of last-level pipelines 26. The last-level pipelines 26 enter the vacuum chamber 15 through the through holes 111, which is equivalent to dividing the substrate 200 into several regions with the same or approximately the same area. Each last-level pipeline 26 is respectively arranged above the corresponding region. In this way, the suction force received by each region of the substrate 200 is the same or approximately the same, further ensuring that the evaporation rate of each point on the substrate 200 is balanced, thereby ensuring that the crystal growth of each point on the substrate 200 is more consistent and improving the quality of the perovskite thin film.
[0038] In some embodiments, referring to Figure 1 、 Figure 2 、 Figure 4 , the pipeline component 2 may further include a second-level pipeline 24 and a third-level pipeline 25 connected in sequence. The second-level pipeline 24 is connected to the first-level pipeline 23, and the third-level pipeline 25 is connected to the last-level pipeline 26. Referring to Figure 1 、 Figure 2, in the shown pipeline assembly 2, the primary pipeline 23 is a straight pipe, the main body of the secondary pipeline 24 is a straight pipe with arc-shaped ends at both ends, the tertiary pipeline 25 is a straight pipe, and the final-stage pipeline 26 is an arc-shaped pipe. The connection point between the primary pipeline 23 and the secondary pipeline 24 is located at the midpoint of the secondary pipeline 24, and the structures on both sides of the midpoint of the secondary pipeline 24 are symmetrical; the tertiary pipeline 25 can be a straight pipe, and the arc-shaped end parts at both ends of the secondary pipeline 24 are respectively connected to the one-fourth position and the three-fourths position of the tertiary pipeline 25. Four final-stage pipelines 26 are respectively connected to one side of the tertiary pipeline 25, and a total of eight final-stage pipelines 26 are connected on both sides. The distance from the connection point between the tertiary pipeline 25 and each final-stage pipeline 26 to the connection point between the secondary pipeline 24 and the tertiary pipeline 25 is the same, and the structure of each final-stage pipeline 26 is the same. Thus, it is ensured that the distances for the gas to flow from each final-stage pipeline 26 to the vacuum pump are equal, that is, the flow paths are consistent.
[0039] The tertiary pipeline 25 can also be composed of two straight pipes. The arc-shaped end parts at both ends of the secondary pipeline 24 are respectively connected to one tertiary pipeline 25, and the structures of the two tertiary pipelines 25 are the same. The connection point between the secondary pipeline 24 and the tertiary pipeline 25 is located at the midpoint of the tertiary pipeline 25; two final-stage pipelines 26 are respectively connected to one side of the tertiary pipeline 25, and a total of four final-stage pipelines 26 are connected on both sides. The distance from the connection point between the tertiary pipeline 25 and each final-stage pipeline 26 to the connection point between the secondary pipeline 24 and the tertiary pipeline 25 is the same, and the structure of each final-stage pipeline 26 is the same. Thus, it is ensured that the distances for the gas to flow from each final-stage pipeline 26 to the vacuum pump are equal, that is, the flow paths are consistent.
[0040] In addition, with the above structure, the level of the pipeline assembly 2 can be continuously expanded as needed, that is, pipelines of the fifth level, sixth level, or even more levels can be continuously set. In this way, the number of final-stage pipelines 26 can be increased, and the requirement that the distances for the gas to flow from each final-stage pipeline 26 to the vacuum pump are equal can also be achieved, so as to match the crystal growth requirements of substrates 200 with different areas and other design requirements. When the area of the substrate 200 remains unchanged, the more the number of final-stage pipelines 26, the smaller the area of the regions into which the substrate 200 is divided, making the evaporation rates of each point on the substrate 200 more balanced. When the area of the substrate 200 becomes larger, by increasing the number of final-stage pipelines 26, it is equivalent to keeping the area of the regions into which the substrate 200 is divided unchanged to ensure the balance of the evaporation rates of each point on the substrate 200.
[0041] Of course, the number of pipelines in the pipeline assembly 2 can also be reduced by increasing the number of vacuum pumps. For example, in this embodiment, when the number of final-stage pipelines 26 remains unchanged and the number of vacuum pumps is two, the primary pipeline 23 can be cancelled, and the two vacuum pumps are respectively connected to the secondary pipeline 24.
[0042] In a specific embodiment, twenty-four vent holes 2211 can be provided on each final-stage pipe 26. The twenty-four vent holes 2211 are arranged near the end of the final-stage pipe 26. Among them, the twenty-four vent holes 2211 are evenly divided into three groups, with eight vent holes 2211 in each group evenly distributed along the circumferential direction of the final-stage pipe 26, and the three groups of vent holes 2211 are evenly distributed along the axial direction of the final-stage pipe 26, that is, the three groups of vent holes 2211 are distributed up and down along the final-stage pipe 26.
[0043] The distance between adjacent groups of vent holes 2211 is preferably 30-50 mm, more preferably 35-45 mm, that is, the distance between adjacent vent holes 2211 up and down is preferably 30-50 mm, more preferably 35-45 mm. The distance from the vent hole 2211 to the side of the final-stage pipe 26 facing the substrate 200 is preferably 18-28 mm, more preferably 21-25 mm, that is, the distance from the vent holes 2211 in the lowermost group to the end of the final-stage pipe 26 is preferably 18-28 mm, more preferably 21-25 mm. The aperture of the vent hole 2211 is preferably 15-25 mm, more preferably 18-22 mm.
[0044] Referring to Figure 5 , the side of the second end 22 of the pipe assembly 2 facing the substrate 200 is a sealing structure 261, so that gas can enter the pipe assembly 2 through the vent holes 2211. In this embodiment, a sealing structure 261 is provided at the end of the final-stage pipe 26, so that gas will not enter the pipe assembly 2 from below the final-stage pipe 26, but enter the pipe assembly 2 through the vent holes 2211. In this way, the lateral flow of gas can be reduced, and the gas flow is more balanced, that is, the collection of gas directly below the final-stage pipe 26 is reduced, and the collection of solvent directly below the final-stage pipe 26 is also reduced, ensuring that the evaporation rates at various points on the substrate 200 are balanced. If the sealing structure 261 is not provided, on the one hand, a large amount of solvent will collect directly below the final-stage pipe 26, which will increase the lateral flow of gas below the final-stage pipe 26, and then reduce the evaporation rate of the solvent on the substrate 200 directly below the final-stage pipe 26, resulting in inconsistent crystal growth at various points on the substrate 200. By setting the sealing structure 261, this phenomenon can be effectively avoided. Thus, by adopting the above structure, the crystal growth at various points on the substrate 200 is ensured to be more consistent, improving the quality of the perovskite thin film. On the other hand, it will cause the pumping speed of the final-stage pipe 26 to be too fast. When the distance between the final-stage pipe 26 and the substrate 200 is short, a high-speed air flow will be generated on the surface of the substrate 200, and the high-speed air flow will disturb the wet film on the surface of the substrate 200, affecting the crystallization effect.
[0045] In a specific embodiment, the perovskite coating and drying device 100 may further include a carrying component, which includes a stage (not shown). The stage is disposed in the vacuum chamber 15 and is used for carrying the substrate 200. The stage may be disposed on the bottom 13 of the box body 1, and preferably protrudes from the bottom 13 of the box body 1 to facilitate the picking and placing of the substrate 200.
[0046] As a preferred embodiment, the carrying component may further include a driving mechanism (not shown). The driving mechanism is used to adjust the height of the stage to adjust the distance between the substrate 200 and the pipe assembly 2. The driving mechanism keeps the distance between the substrate 200 and the pipe assembly 2 within a preset range, that is, the distance between the substrate 200 and the last-stage pipe 26 is kept within a preset range. If the distance between the substrate 200 and the last-stage pipe 26 is too large, not only the requirements for the vacuum pump increase, but also the influence between adjacent last-stage pipes 26 will increase. If the distance between the substrate 200 and the last-stage pipe 26 is too small, problems such as eddy currents will occur between the substrate 200 and the last-stage pipe 26, which will cause the air pressures at different points on the substrate 200 to be different, resulting in uneven evaporation rates at different points on the substrate 200, and thus inconsistent crystal growth at different points on the substrate 200, reducing the quality of the perovskite film. In this embodiment, the distance between the substrate 200 and the last-stage pipe 26 is 50 - 250 mm, more preferably 100 - 150 mm. In some embodiments, the pipe assembly 2 and the box body 1 can move relative to each other to adjust the distance between the second end 22 of the pipe assembly 2 and the substrate 200. That is to say, the second end 22 of the pipe assembly 2 and the through hole 111 can move relative to each other to adjust the distance between the second end 22 of the pipe assembly 2 and the substrate 200.
[0047] Refer to Figure 7 , the above perovskite coating and drying device 100 was subjected to a simulation test by Fluent software. As shown in the figure, the gas flow direction above the substrate 200 is that the gas flows approximately along the normal direction of the substrate 200 near the surface of the substrate 200, which is consistent with the effect of using a laminar flow plate type vacuum drying device.
[0048] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Without departing from the principles and purposes of the present invention, those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention, and all these changes should fall within the protection scope of the claims of the present invention.
Claims
1. A perovskite coating and drying device, characterized in that: include: A box body, wherein the box body has a vacuum chamber, and the vacuum chamber is used to place a substrate; A pipeline assembly, wherein the first end of the pipeline assembly comprises at least one first-stage pipeline, the first-stage pipeline is connected to the vacuum pump, the second end of the pipeline assembly comprises a plurality of final-stage pipelines, the final-stage pipelines are connected to the vacuum chamber, a plurality of vents are evenly distributed on the side wall of each final-stage pipeline, and the distance between each final-stage pipeline and the first-stage pipeline is equal; The top of the box body is evenly provided with through holes with the same number as the final-stage pipeline, and the final-stage pipeline enters the vacuum chamber through the corresponding through holes. The pipeline assembly and the box body can move relatively to adjust the distance between the final-stage pipeline and the substrate.
2. The perovskite coating and drying device according to claim 1, characterized in that: The plurality of final-stage pipelines are evenly distributed in the vacuum chamber.
3. The perovskite coating and drying device according to claim 1, characterized in that: The pipeline assembly further includes a second-stage pipeline and a third-stage pipeline which are connected in sequence, wherein the second-stage pipeline is connected to the first-stage pipeline, and the third-stage pipeline is connected to the final-stage pipeline.
4. The perovskite coating and drying device according to claim 1, characterized in that: Twenty-four ventilation holes are arranged on each of the final-stage pipes, wherein the twenty-four ventilation holes are divided into three groups, eight ventilation holes in each group are evenly distributed along the circumference of the final-stage pipe, and the three groups of ventilation holes are evenly distributed along the axial direction of the final-stage pipe.
5. The perovskite coating and drying device according to claim 4, characterized in that: The distance between each adjacent group of ventilation holes is 30-50 mm, the distance from the ventilation holes to the side of the final-stage pipeline facing the substrate is 18-28 mm, and the aperture of the ventilation holes is 15-25 mm.
6. The perovskite coating and drying device according to claim 1, characterized in that: A side of the second end of the pipeline component facing the substrate is a sealing structure, so that gas can enter the pipeline component through the vent hole.
7. The perovskite coating and drying device according to claim 1, characterized in that: It also includes a carrying component, which includes a stage, and the stage is arranged in the vacuum chamber and is used to carry the substrate.
8. The perovskite coating and drying device according to claim 7, characterized in that: The bearing assembly further comprises a driving mechanism, and the driving mechanism is used to adjust the height of the stage to adjust the distance from the substrate to the second end of the pipeline assembly.