MEMS sensor and electronic atomization device

Abstract

The utility model discloses an MEMS sensor and an electronic atomization device. The MEMS sensor comprises a substrate, a passivation layer, a base plate, a first force application element, a second force application element and a conductive contact. The first surface of the substrate is provided with a groove, and the second surface is provided with a Wheatstone bridge circuit; the passivation layer covers the second surface of the substrate; the substrate covers the groove so as to form a sealed cavity with the substrate; at least part of the first force application element is arranged on the side, away from the substrate, of the passivation layer; at least part of the second force application element is arranged on the bottom wall of the groove; the conductive contacts are arranged on the substrate and / or the base plate; the first force application element and the second force application element are both configured to apply acting force close to or away from the substrate to the bottom wall of the groove under the power-on condition. Through the mode, the substrate can be always in a flat initial state, so that the problem that deformation of the substrate does not have ideal linear change with pressure is well improved, and the detection precision of the MEMS sensor is improved.

Description

Technical Field

[0001] This application relates to the technical field of sensors, and particularly to a MEMS sensor and an electronic atomization device. Background Art

[0002] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, MEMS technology has been widely applied to the field of sensors. The traditional MEMS piezoresistive pressure sensor is based on the piezoresistive effect of single-crystal silicon. Usually, a Wheatstone bridge structure is adopted to convert an external pressure signal into a corresponding electrical signal, and the magnitude of the external pressure signal can be known by measuring the value of this electrical signal. However, this type of MEMS piezoresistive pressure sensor has the problem of inaccurate detection. Summary of the Utility Model

[0003] This application provides a MEMS sensor and an electronic atomization device, which are used to solve the problem of inaccurate detection of the MEMS sensor.

[0004] According to the first aspect of this application, some embodiments of this application provide a MEMS sensor, including a substrate, a passivation layer, a substrate plate, a first force-applying element, a second force-applying element, and a conductive contact; the substrate has opposite first and second surfaces; the first surface has a groove, and the second surface has a Wheatstone bridge circuit, and the bridge arms of the Wheatstone bridge circuit include piezoresistors; the passivation layer covers the second surface of the substrate; the substrate plate covers the groove to form a sealed cavity with the substrate; at least part of the first force-applying element is arranged on the side of the passivation layer away from the substrate; at least part of the second force-applying element is arranged on the bottom wall of the groove; the conductive contact is arranged on the substrate and / or the substrate plate and is electrically connected to the first force-applying element and the second force-applying element respectively; wherein, both the first force-applying element and the second force-applying element are configured to be able to apply a force close to or away from the substrate plate to the bottom wall of the groove when energized.

[0005] In some of these embodiments, the first force-applying element includes a first lower plate and a first upper plate, the first lower plate is arranged on the surface of the passivation layer away from the substrate; the first upper plate is arranged at an interval on the side of the first lower plate away from the substrate; wherein, the first upper plate and the first lower plate are configured to be able to repel or attract each other when energized.

[0006] In some of these embodiments, an edge portion of the first upper electrode plate is disposed on a surface of the passivation layer away from the substrate, and a middle portion is suspended on a side of the first lower electrode plate away from the substrate; wherein, the middle portion of the first upper electrode plate and the first lower electrode plate form a parallel plate capacitor; the conductive contact includes a first conductive contact electrically connected to the first upper electrode plate and a second conductive contact electrically connected to the first lower electrode plate.

[0007] In some of these embodiments, one of the first upper electrode plate and the first lower electrode plate includes a permanent magnetic material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet for changing the polarity of the electromagnet. Optionally, in some of these embodiments, the conductive contacts are respectively electrically connected to the first upper electrode plate and the first lower electrode plate for changing the polarity of the electromagnet.

[0008] In some of these embodiments, the first force-applying element includes a first deformation material layer disposed on a surface of the passivation layer away from the substrate, and the first deformation material layer is configured to be capable of deforming when energized, so as to apply a force to the bottom wall of the groove to approach or move away from the substrate.

[0009] In some of these embodiments, the second force-applying element includes a second lower electrode plate and a second upper electrode plate; the second lower electrode plate is disposed on a surface of the substrate exposed to the sealed cavity; the second upper electrode plate is disposed on the bottom surface of the groove; wherein, the second upper electrode plate and the second lower electrode plate form a parallel plate capacitor; the conductive contact includes a third conductive contact electrically connected to the second upper electrode plate and a fourth conductive contact electrically connected to the second lower electrode plate.

[0010] In some of these embodiments, the second force-applying element includes a second lower electrode plate and a second upper electrode plate, the second lower electrode plate is disposed on a surface of the substrate exposed to the sealed cavity; the second upper electrode plate is disposed on the bottom surface of the groove; wherein, one of the second upper electrode plate and the second lower electrode plate includes a permanent magnetic material, and the other is an electromagnet, the conductive contact is electrically connected to the electromagnet for changing the polarity of the electromagnet. Optionally, the first upper electrode plate and the second lower electrode plate are both electromagnets; the conductive contacts are respectively electrically connected to the first upper electrode plate and the second lower electrode plate for changing the polarity of the electromagnet.

[0011] In some of these embodiments, the second force-applying element includes a second deformation material layer disposed on the bottom surface of the groove, and the second deformation material layer is configured to be capable of deforming when energized, so as to apply a force to the bottom wall of the groove to approach or move away from the substrate.

[0012] In some of these embodiments, the Wheatstone bridge circuit includes four groups of piezoresistors. The piezoresistors generate resistance changes in response to pressure changes acting on the substrate, thereby converting the pressure signal into an electrical signal. The Wheatstone bridge circuit further includes four groups of conductive regions for leading out the electrical signal.

[0013] In some of these embodiments, the substrate is a semiconductor substrate. Each group of piezoresistors respectively includes two parallel and spaced-apart sub-piezoresistors, and a heavily doped ohmic contact region formed between the sub-piezoresistors. The heavily doped ohmic contact region is used for electrically connecting the sub-piezoresistors in this group of piezoresistors.

[0014] In some of these embodiments, the piezoresistors and the heavily doped ohmic contact regions are formed on the substrate, and a dielectric layer is further covered on the substrate. The four groups of conductive regions are formed on the dielectric layer.

[0015] In some of these embodiments, a passivation layer is further covered on the side of the dielectric layer away from the substrate, and at least a part of each of the four groups of conductive regions is exposed from the passivation layer.

[0016] According to a second aspect of the present application, some embodiments of the present application provide an electronic atomization device, including a liquid storage unit, an atomization component, a MEMS sensor, and a power source. The liquid storage unit is used for storing an aerosol generation matrix; the atomization component is used for atomizing the aerosol generation matrix; the MEMS sensor is the MEMS sensor provided in any one of the embodiments; the MEMS sensor is arranged on the air flow channel of the electronic atomization device and is used for detecting the air pressure change in the air flow channel; the power source is used for providing voltage to the atomization component and the MEMS sensor.

[0017] In some of these embodiments, the electronic atomization device further includes a control circuit, and the control circuit is electrically connected to the power source, the atomization component, and the MEMS sensor respectively. The control circuit is used for controlling the power source to apply an electrical signal to the first force application element and / or the second force application element according to the change amount of the output voltage caused by the air pressure change in the air flow channel of the MEMS sensor, so that the first force application element and / or the second force application element apply a force close to or away from the bottom wall of the groove to the substrate, so that the change amount of the output voltage of the MEMS sensor is less than or equal to a preset threshold.

[0018] In some embodiments, the preset threshold is zero. The control circuit is further used for detecting whether the change amount of the output voltage of the MEMS sensor is zero, and when detecting that the change amount of the output voltage of the MEMS sensor is zero, determining the magnitude of the air pressure according to the electrical signal applied to the deformation material layer.

[0019] For the MEMS sensor according to the above embodiments, when the substrate is subjected to a gas pressure in a direction away from the substrate, a DC voltage can be applied to the first force-applying element and / or the second force-applying element, causing the first force-applying element and / or the second force-applying element to apply a force close to the substrate to the bottom wall of the groove, and this force cancels out the applied gas pressure; when the substrate is subjected to a gas pressure in a direction close to the substrate, a DC voltage can be applied to the first force-applying element and / or the second force-applying element, causing the first force-applying element and / or the second force-applying element to apply a force away from the substrate to the bottom wall of the groove, and this force cancels out the applied gas pressure, so that the substrate is always in a flat state. Therefore, during the entire suction process, the deformation of the substrate is always small. Thus, the problem that the deformation of the substrate does not change linearly with the pressure ideally is improved, and the detection accuracy of the MEMS sensor according to the embodiments of the present application is thereby improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0021] Figure 1 It is a top view of the MEMS sensor provided by some embodiments of the present application;

[0022] Figure 2 For the present application Figure 1 It is a top view without the first force-applying element and the passivation layer;

[0023] Figure 3 It is Figure 1 A schematic cross-sectional view along line III-III;

[0024] Figure 4 It is a schematic structural diagram of the MEMS sensor provided by some other embodiments of the present application;

[0025] Figure 5 It is a schematic structural diagram of the MEMS sensor provided by some other embodiments of the present application;

[0026] Figure 6 It is a schematic structural diagram of the MEMS sensor provided by some other embodiments of the present application;

[0027] Figure 7 It is a schematic structural diagram of the MEMS sensor provided by some other embodiments of the present application;

[0028] Figure 8Schematic diagram of the MEMS sensor provided by some other embodiments of the present application;

[0029] Figure 9 Schematic diagram of the MEMS sensor provided by some other embodiments of the present application;

[0030] Figure 10 For Figure 9 Schematic diagram of the structure of the first deformation material layer in;

[0031] Figure 11 Top view of the MEMS sensor provided by some other embodiments of the present application;

[0032] Figure 12 Schematic diagram of the MEMS sensor provided by some other embodiments of the present application;

[0033] Figure 13 For Figure 12 Bottom view of the substrate in;

[0034] Figure 14 Flow chart of the method for manufacturing the MEMS sensor provided by some embodiments of the present application;

[0035] Figure 15 For Figure 14 Flow chart of step S10 in;

[0036] Figure 16 For Figure 15 Schematic diagram of the structure obtained after step S11 in;

[0037] Figure 17 For Figure 15 Schematic diagram of the structure obtained after step S12 in;

[0038] Figure 18 For Figure 15 Flow chart of S13 in;

[0039] Figure 19 For Figure 18 Schematic diagram of the structure obtained in step S131 in;

[0040] Figure 20 For Figure 18 Schematic diagram of the structure obtained after step S132 in;

[0041] Figure 21 For Figure 20 Top view of;

[0042] Figure 22 For Figure 15 Schematic diagram of the structure obtained after step S14 in;

[0043] Figure 23 For Figure 22Top view;

[0044] Figure 24 is Figure 14 The flowchart of step S20 in

[0045] Figure 25 is Figure 24 The structural schematic diagram obtained after step S21 in

[0046] Figure 26 is Figure 24 The structural schematic diagram obtained after step S22 in

[0047] Figure 27 is Figure 24 The structural schematic diagram obtained after step S23 in

[0048] Figure 28 is Figure 14 The flowchart of step S30 in

[0049] Figure 29 is Figure 28 The structural schematic diagram obtained after step S31 in

[0050] Figure 30 is Figure 28 The structural schematic diagram obtained after step S32 in

[0051] Figure 31 is Figure 14 The flowchart of step S40 in

[0052] Figure 32 is Figure 31 The structural schematic diagram obtained after step S41 in

[0053] Figure 33 is Figure 31 The structural schematic diagram obtained after step S42 in

[0054] Figure 34 is Figure 31 The structural schematic diagram obtained after step S43 in

[0055] Figure 35 is Figure 14 The structural schematic diagram obtained after step S50 in

[0056] Figure 36 The structural schematic diagram of the electronic atomization device provided by some embodiments of the present application;

[0057] Figure 37 is Figure 36 The functional module diagram of the electronic atomization device.

[0058] Explanation of the reference numerals in the drawings:

[0059] 10 - Substrate, 11 - First surface, 12 - Second surface, 13 - Groove, 14 - Wheatstone bridge circuit, 140 - Varistor, 141 - Sub - varistor, 142 - Conductive region, 143 - Heavily doped ohmic contact region, 144 - Conductive lead, 15 - Dielectric layer, 17 - First conductive hole, 18 - Second conductive hole; 20 - Substrate plate, 23 - Third conductive hole, 24 - Fourth conductive hole; 30 - Passivation layer, 40 - First force - applying element, 41 - First upper plate, 410 - Release hole, 42 - First lower plate, 43 - First deformation material layer, 430 - First thermally - induced deformation material layer, 431 - First conductive heating layer, 432 - First sub - deformation material layer, 433 - Second sub - deformation material layer; 50 - Second force - applying element, 51 - Second upper plate, 510 - First lead; 52 - Second lower plate, 53 - Second deformation material layer, 530 - Second thermally - induced deformation material layer, 531 - Second conductive heating layer; 60 - Conductive contact, 61 - First conductive contact, 62 - Second conductive contact, 63 - Third conductive contact, 64 - Fourth conductive contact; 70 - Sacrificial layer; 100 - MEMS sensor; 200 - Liquid storage assembly; 300 - Atomization assembly; 400 - Control circuit; 500 - Power supply; 1000A - Liquid storage unit, 1000B - Control unit, 1000 - Electronic atomization device. Detailed implementation manners

[0060] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above - mentioned drawings are intended to cover non - exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products or devices.

[0062] Reference to "embodiment" in this document means that the specific features, structures, or characteristics described in connection with the embodiment may be included in at least one embodiment of this application. The phrase appears at various positions in the specification and does not necessarily refer to the same embodiment each time, nor are they independent or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments.

[0063] In the description of the embodiments of this application, technical terms such as "first", "second", "third", etc. are only used to distinguish different objects and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity, specific order, or primary-secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "a plurality" is two or more (including two), such as two, three, etc., unless otherwise clearly and specifically defined. Similarly, "a plurality of groups" means two or more groups (including two groups), and "a plurality of pieces" means two or more pieces (including two pieces).

[0064] In the description of the embodiments of this application, the term "and / or" is merely a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally represents an "or" relationship between the associated objects before and after.

[0065] In the description of the embodiments of this application, technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the relative orientation or positional relationship between components in a specific posture (as shown in the drawings). This is only for the convenience of describing the embodiments of this application and simplifying the description, and does not indicate or imply that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation on the embodiments of this application.

[0066] In the description of the embodiments of this application, unless otherwise clearly specified and limited, technical terms such as "installation", "connection", "connection", "fixation", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can also be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of this application can be understood according to specific circumstances.

[0067] In recent years, with the rapid development of MEMS technology, MEMS technology has been widely applied to the sensor field. Traditional MEMS sensors are based on the piezoresistive effect of single crystal silicon. Usually, a Wheatstone bridge structure is adopted to convert the external pressure signal into a corresponding electrical signal, and the magnitude of the external pressure signal is obtained by measuring the value of this electrical signal.

[0068] However, through research, the inventors of the present application found that as the externally applied pressure increases, the displacement (or "deformation") of the strain film in the sensor structure does not always show an ideal linear change, resulting in the resistance values of the arms of the Wheatstone bridge not always changing linearly, and further resulting in poor linearity of the test results. Such MEMS sensors have the problem of inaccurate detection.

[0069] The inventors of the present application have conducted in-depth research on the MEMS sensor structure. The MEMS sensor provided by the present application includes a substrate, a passivation layer, a substrate plate, a first force application element, a second force application element, and a conductive contact; the substrate has opposite first and second surfaces; the first surface has a groove, and the second surface has a Wheatstone bridge circuit, and the arms of the Wheatstone bridge circuit include piezoresistors; the passivation layer covers the second surface of the substrate; the substrate plate covers the groove to form a sealed cavity; the first force application element is at least partially disposed on the side of the passivation layer away from the substrate; the second force application element is at least partially disposed on the inner surface of the bottom wall of the groove; the conductive contact is disposed on the substrate and / or the substrate plate and is electrically connected to the first force application element and the second force application element respectively; the conductive contact is used to connect to a control circuit so that the control circuit can independently control the first force application element and the second force application element; wherein, both the first force application element and the second force application element are configured to be able to apply a force close to or away from the substrate plate to the bottom wall of the groove when energized.

[0070] By applying a voltage to the first force application element and / or the second force application element in the embodiments of the present application, the substrate can always be in a flat initial state, so that when the external pressure is large, the linearity will not deteriorate due to the increase in the deflection of the strain film in the substrate. Therefore, the problem that the deformation of the substrate does not change linearly with the pressure is well improved, thereby improving the detection accuracy of the MEMS sensor in the embodiments of the present application.

[0071] The present application will be described in detail below with reference to the drawings and embodiments.

[0072] Please refer to Figures 1-3 , Figure 1 , which is a top view of the MEMS sensor provided by some embodiments of the present application; Figure 2 is the top view of the present application Figure 1 without the first force application element and the passivation layer; Figure 3 is Figure 1 a schematic cross-sectional view along line III-III.

[0073] The MEMS sensor 100 provided by the embodiments of the present application includes a substrate 10, a base plate 20, a passivation layer 30, a first force - applying element 40, a second force - applying element 50, and a conductive contact 60.

[0074] In one implementation, the material of the substrate 10 can be a silicon - based material, such as a single - crystal silicon wafer. A single - crystal silicon wafer is a common substrate for semiconductor devices. Metal layers can be deposited on it and metal ions can be doped to construct semiconductor devices. The substrate 10 can be an N - type single - crystal silicon wafer, or in other embodiments, the substrate 10 can also be a P - type single - crystal silicon wafer. In another implementation, when the MEMS sensor 100 needs to have the property of being rollable, polyacetamide / polyimide (PI), that is, a PI film, can be selected as the substrate 10 material, and then a single - crystal silicon layer is deposited on it to prepare a rollable MEMS sensor 100. The embodiments of the present application are introduced by taking the substrate 10 as a semiconductor substrate 10 as an example. Further, in some embodiments, the thickness of the substrate 10 is 50 - 800 μm, for example, it can be 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, or 800 μm, etc.

[0075] In some embodiments, the substrate 10 has opposite first surface 11 and second surface 12, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. Among them, the first surface 11 has a groove 13, and the cross - sectional shape of the groove 13 along the thickness direction of the substrate 10 is not limited, for example, it can be square, rectangular, or trapezoidal, etc. The present application does not make specific limitations on this. The embodiments of the present application are introduced by taking the trapezoid as an example, and the short side of the trapezoid is close to the second surface 12, and the long side of the trapezoid is far from the second surface 12, as Figure 3 shown. The second surface 12 has a Wheatstone bridge circuit 14, and the bridge arms of the Wheatstone bridge circuit 14 include piezoresistors 140.

[0076] In some embodiments, please refer to Figure 2 , the Wheatstone bridge circuit 14 includes four groups of piezoresistors 140. The piezoresistors 140 can generate resistance changes in response to the pressure changes acting on the substrate 10, thereby converting the pressure signal into an electrical signal, and each group of piezoresistors 140 respectively includes two parallel and spaced - apart sub - piezoresistors 141. In one implementation, the arrangement directions of the four groups of piezoresistors 140 are the same, for example Figure 2 in the X direction in, the four groups of piezoresistors 140 are located in the central region of the substrate 10, forming Figure 2The shown rhombus, and is distributed at the four corners of the rhombus. In another embodiment, the arrangement directions of the four groups of varistors 140 are different. Exemplarily, two of the groups of varistors 140 are arranged respectively according to Figure 2 the X direction in; The other two groups of varistors 140 are arranged along the Y direction. Optionally, in yet another embodiment, the four groups of varistors 140 are arranged in a rectangle (not shown in the figure), and the arrangement directions of the four groups of varistors 140 are the same.

[0077] In some embodiments, the Wheatstone bridge circuit 14 further includes four groups of conductive regions 142 for leading out electrical signals. In one embodiment, as Figure 2 shown, the four groups of varistors 140 are respectively arranged at the middle positions of the substrate 10, and the four conductive regions 142 are respectively arranged around the four groups of varistors 140. Specifically, the four conductive regions 142 are respectively arranged at the four corner positions of the substrate 10. In another embodiment, the four groups of varistors 140 are respectively arranged at the four corner positions of the substrate 10 (not shown in the figure), and the four conductive regions 142 are arranged at the middle position of the substrate 10.

[0078] Further, please refer to Figure 2 and Figure 3 , in some embodiments, the Wheatstone bridge circuit 14 further includes heavily doped ohmic contact regions 143 formed between the sub-varistors 141. The heavily doped ohmic contact regions 143 correspond to the varistors 140 one by one. The heavily doped ohmic contact regions 143 are used to electrically connect the sub-varistors 141 in the corresponding group of varistors 140. The heavily doped ohmic contact regions 143 are regions with conductive characteristics after semiconductor doping with metal ions. In some embodiments, the sub-varistors 141 and the heavily doped ohmic contact regions 143 may have different doping degrees, and the varistors 140 and the heavily doped ohmic contact regions 143 may be formed on the substrate 10.

[0079] Please refer to Figure 3 , a dielectric layer 15 is further covered on the substrate 10. The four groups of conductive regions 142 are formed on the dielectric layer 15. The dielectric layer 15 can be used as a protective layer and an insulating layer. The material of the dielectric layer 15 can be silicon dioxide or silicon nitride, etc. The thickness of the oxide layer is 0.01 - 1μm, for example, it can be 0.01μm, 0.03μm, 0.05μm, 0.07μm, 0.1μm, 0.15μm, 0.2μm, 0.25μm, 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm or 1μm, etc. The thickness of the nitride layer is 0.03 - 3μm, for example, it can be 0.03μm, 0.05μm, 0.07μm, 1μm, 1.2μm, 1.5μm, 1.7μm, 2μm, 2.2μm, 2.5μm, 2.7μm or 3μm, etc.

[0080] The dielectric layer 15 may have conductive via holes 150. The Wheatstone bridge circuit 14 further includes conductive leads 144. The conductive region 142 and the conductive leads 144 may be electrically connected through the heavy-doped ohmic contact region 143 in the conductive via holes 150 on the dielectric layer 15, and then electrically connected to the varistor 140. Optionally, the material of the conductive leads 144 is at least one of copper, nickel-chromium alloy, iron, or platinum. The conductive region 142 may be a metal pad, and the material of the conductive region 142 may be the same as that of the conductive leads 144.

[0081] Please refer to Figure 3 , in some embodiments, the substrate 20 may be a glass substrate, a ceramic substrate, etc. The substrate 20 may cover the groove 13 and enclose a sealed cavity with the substrate 10, that is, Figure 3 the indicated groove 13 is the sealed cavity. The bottom wall of the sealed cavity projects along the second direction in the area of the substrate 10 together to form the strain film 101. In some embodiments, the strain film 101 at least includes a part of the substrate 10, a part of the dielectric layer 15, and a part of the passivation layer 30.

[0082] In some embodiments, the substrate 20 may be bonded to the substrate 10 to form a sealed cavity. Exemplarily, in some embodiments, the substrate 20 and the substrate 10 may be bonded and connected through chromium metal under preset temperature and / or preset pressure conditions. The specific preset temperature and pressure need to be determined according to the bonding material and the actual equipment used, and will not be specifically described here. Those skilled in the art can understand the concept of this embodiment according to the above description. In some other embodiments, the substrate 20 may be directly bonded to the substrate 10. Further, in some embodiments, a first sealing ring (not shown in the figure) is provided on the first surface 11 of the substrate 10, and a second sealing ring (not shown in the figure) is provided on the surface of the substrate 20 close to the substrate 10. The first sealing ring and the second sealing ring are arranged opposite to each other, so that the substrate 10 and the substrate 20 are bonded to form a sealed cavity.

[0083] The passivation layer 30 may cover the second surface 12 of the substrate 10. The passivation layer 30 has a dense surface and can be used to resist water vapor erosion, device oxidation, etc. Optionally, in some embodiments, the passivation layer 30 covers the side of the dielectric layer 15 away from the substrate 10, and the four groups of conductive regions 142 are respectively at least partially exposed from the passivation layer 30. Further, in some embodiments, the passivation layer 30 covers the surfaces of the dielectric layer 15 and the conductive leads 144. Among them, there are hollow areas at the positions of the passivation layer 30 corresponding to the conductive regions 142, so that the conductive regions 142 are exposed to the external environment to facilitate the extraction of electrical signals through the conductive leads 144.

[0084] Optionally, in some embodiments, the passivation layer 30 may include an oxide layer and a nitride layer, where the thickness of the oxide layer is 0.01 - 1 μm, for example, it may be 0.01 μm, 0.03 μm, 0.05 μm, 0.07 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm, etc., and the thickness of the nitride layer is 0.03 - 3 μm, for example, it may be 0.03 μm, 0.05 μm, 0.07 μm, 1 μm, 1.2 μm, 1.5 μm, 1.7 μm, 2 μm, 2.2 μm, 2.5 μm, 2.7 μm or 3 μm, etc.

[0085] Please continue to refer to Figure 3 , in some embodiments, at least a part of the first force - applying element 40 is disposed on the side of the passivation layer 30 away from the substrate 10; at least a part of the second force - applying element 50 is disposed on the inner surface of the bottom wall of the groove 13. Further, both the first force - applying element 40 and the second force - applying element 50 are configured to be able to apply a force to the bottom wall of the groove 13 to approach or move away from the substrate 20 when energized, so as to resist the deformation (or "displacement") of the substrate 10 caused by air - flow disturbance during the use of the MEMS sensor 100. In the embodiments of the present application, the first force - applying element 40 and the second force - applying element 50 can respectively apply forces to the bottom wall of the groove 13 under the control of the control circuit.

[0086] Optionally, in some embodiments, the first force - applying element 40 includes a first upper plate 41 and a first lower plate 42. Among them, the first lower plate 42 is disposed on the surface of the passivation layer 30 away from the substrate 10, and the first upper plate 41 is spaced apart from the first lower plate 42 on the side away from the substrate 10. In an embodiment, please refer to Figure 1 , the first upper plate 41 has a release hole 410, and the release hole 410 is used to release the sacrificial layer 70 during the manufacturing process of the MEMS sensor 100. The first upper plate 41 and the first lower plate 42 are configured to be able to repel or attract each other when energized, and the basis can be the principle of like charges repelling and opposite charges attracting, such as Figure 3 shown. When opposite charges attract, one of the first upper plate 41 and the first lower plate 42 is the positive plate and the other is the negative plate. When like charges repel, both the first upper plate 41 and the first lower plate 42 are positive plates, or both are negative plates; or the principle of like poles repelling and opposite poles attracting in magnetism, such as Figure 4 shown.

[0087] Please continue to refer to Figure 3, in some embodiments, the first force - applying element 40 is a parallel - plate capacitor. In one embodiment, the edge portion of the first upper plate 41 can be disposed on the surface of the passivation layer 30 away from the substrate 10, and the middle portion is suspended on the side of the first lower plate 42 away from the substrate 10. The first upper plate 41, the first lower plate 42, and the passivation layer 30 can enclose a cavity. Both the first upper plate 41 and the first lower plate 42 are electrode plates. Preferably, the projection of the middle suspended portion of the first upper plate 41 on the substrate 10 covers the bottom wall of the groove 13 and the first lower plate 42; through the interaction between the middle suspended portion of the first upper plate 41 and the first lower plate 42, a force is applied to the bottom wall of the groove 13.

[0088] When the first upper plate 41 and the first lower plate 42 are charged with the same - polarity charges, according to the principle of like - charges repelling, the two move away from each other relatively. In some embodiments of the present application, after the first upper plate 41 and the first lower plate 42 are energized, the first lower plate 42 moves in the direction close to the substrate 20, so that the bottom wall of the groove 13 moves in the direction close to the substrate 20. In Figure 3 , the direction close to the substrate 20 can refer to the vertically downward direction, which is defined as the first direction (i.e., Figure 3 the opposite direction of the Z - direction in Figure 3 ); when the first upper plate 41 and the first lower plate 42 are charged with opposite - polarity charges, according to the principle of opposite - charges attracting, the two move closer to each other relatively. In some embodiments of the present application, after the first upper plate 41 and the first lower plate 42 are energized, the first lower plate 42 moves in the direction away from the substrate 20, so that the bottom wall of the groove 13 moves in the direction away from the substrate 20. In Figure 3 , the direction away from the substrate 20 can refer to the vertically upward direction, which is defined as the second direction (i.e.,

[0089] the Z - direction in

[0090] ). In subsequent embodiments, this will be used as an example for introduction.

[0089] In some embodiments, the material of the first upper plate 41 can be materials such as platinum, nickel, tungsten, etc., which are suitable as thermal deformation resistors and suitable as capacitor plates. Among them, platinum metal is a good thermistor, and its resistance value changes linearly with temperature. The material of the first lower plate 42 can also be materials such as gold, platinum, nickel, copper, and tin oxides, manganese oxides, etc., which are suitable as capacitor plates.

[0090] Furthermore, in some embodiments, the conductive contact 60 includes a first conductive contact 61 electrically connected to the first upper plate 41 and a second conductive contact 62 electrically connected to the first lower plate 42. In some embodiments, the material of the first conductive contact 61 is the same as that of the first upper plate 41, and the material of the second conductive contact 62 is the same as that of the first lower plate 42. This can reduce the contact resistance, reduce heat generation, and improve energy utilization efficiency. Optionally, in some other embodiments, the material of the first conductive contact 61 may be different from that of the first upper plate 41, and the material of the second conductive contact 62 may also be different from that of the first lower plate 42. The number and positions of the first conductive contact 61 and the second conductive contact 62 are not limited. The numbers may be the same or different, and may be one, two, three, four, etc. respectively. The positions may be set on the substrate 10 at the same time, or on the substrate 20 at the same time, or part of them may be set on the substrate 10 and the remaining part may be set on the substrate 20. They may also be set on the passivation layer 30 and the dielectric layer 15, and can be specifically designed according to needs. Correspondingly, the substrate 10 has a first conductive hole 17 and a second conductive hole 18 arranged at intervals. The same material as the first upper plate 41 can be deposited in the first conductive hole 17 to form the first conductive contact 61, and the same material as the first lower plate 42 can be deposited in the second conductive hole 18 to form the second conductive contact 62.

[0091] Similarly, please continue to refer to Figure 3 , in some embodiments, the second force - applying element 50 is also a parallel - plate capacitor. Specifically, the second force - applying element 50 includes a second upper plate 51 and a second lower plate 52. The second lower plate 52 is disposed on the surface of the substrate 20 exposed to the sealed cavity, that is, on the surface of the substrate 20 close to the substrate 10. The second upper plate 51 is disposed on the bottom surface of the groove 13. Both the second upper plate 51 and the second lower plate 52 are electrode plates of the parallel - plate capacitor. The second upper plate 51 and the second lower plate 52 are configured to be able to repel or attract each other when energized. The basis can be the principle of like charges repelling and opposite charges attracting. When opposite charges attract, one of the second upper plate 51 and the second lower plate 52 is the positive electrode plate and the other is the negative electrode plate. When like charges repel, both the second upper plate 51 and the second lower plate 52 are positive electrode plates or both are negative electrode plates.

[0092] The conductive contact 60 further includes a third conductive contact 63 electrically connected to the second upper plate 51 and a fourth conductive contact 64 electrically connected to the second lower plate 52. The material of the second upper plate 51 may be similar to that of the first upper plate 41 described above, and the material of the second lower plate 52 may be similar to that of the first lower plate 42 described above. For details, reference may be made to the description of the first upper plate 41 and the first lower plate 42 in the foregoing embodiments, which will not be elaborated here. Correspondingly, the substrate 20 has a third conductive hole 23 and a fourth conductive hole 24 arranged at intervals. The same material as the second upper plate 51 and the first lead 510 may be deposited in the third conductive hole 23 to form the third conductive contact 63, and the same material as the second lower plate 52 may be deposited in the fourth conductive hole 24 to form the fourth conductive contact 64.

[0093] Please refer to Figure 4 and Figure 5 , in some other embodiments, one of the first upper plate 41 and the first lower plate 42 includes a permanent magnet material, and the other is an electromagnet. The conductive contact 60 is electrically connected to the electromagnet and is used to change the polarity of the electromagnet. Specifically, the polarity of the permanent magnet material is fixed. In the embodiments of the present application, the polarity of the permanent magnet material close to the electromagnet is introduced as the N pole. The magnetism of the electromagnet close to the permanent magnet material can be determined by Ampere's rule. Therefore, the polarity of the electromagnet can be changed by changing the direction of the current in the electromagnet. When the magnetism of the electromagnet close to the permanent magnet material is the N pole, the first upper plate 41 and the first lower plate 42 repel each other. When the magnetism of the electromagnet close to the permanent magnet material is the S pole, the first upper plate 41 and the first lower plate 42 attract each other; conversely, when the polarity of the permanent magnet material close to the electromagnet is the S pole, the first upper plate 41 and the first lower plate 42 attract each other when the magnetism of the electromagnet close to the permanent magnet material is the N pole, and the first upper plate 41 and the first lower plate 42 repel each other when the magnetism of the electromagnet close to the permanent magnet material is the S pole.

[0094] Please refer to Figure 4 , in an embodiment, the first upper plate 41 is a permanent magnet material, the first lower plate 42 is an electromagnet, and the conductive contact 60 includes two second conductive contacts 62 arranged at intervals. One of the second conductive contacts 62 is electrically connected to one end of the first lower plate 42, and the other second conductive contact 62 is electrically connected to the other end of the first lower plate 42 and is used to apply a DC voltage to the first lower plate 42 to change its polarity. Correspondingly, the substrate 10 has two second conductive holes 18 arranged at intervals, and the same material as the first lower plate 42 is deposited in the two second conductive holes 18 to form two second conductive contacts 62.

[0095] Similarly, please continue to refer to Figure 4, in some embodiments, the second upper plate 51 is a permanent magnet material, the second lower plate 52 is an electromagnet, and the conductive contact 60 further includes two fourth conductive contacts 64 arranged at intervals. One of the fourth conductive contacts 64 is electrically connected to one end of the second lower plate 52, and the other fourth conductive contact 64 is electrically connected to the other end of the second lower plate 52, for applying a DC voltage to the second lower plate 52 to change its polarity. Correspondingly, the substrate 20 has two fourth conductive holes 24 arranged at intervals, and the same material as the second lower plate 52 is deposited in the two fourth conductive holes 24 to form two fourth conductive contacts 64. In this embodiment, setting the second lower plate 52 on the substrate 20 as an electromagnet and the second upper plate 51 as a permanent magnet material can eliminate the need to arrange the first lead 510 for the second upper plate 51, with a simple structure and easy preparation.

[0096] Please refer to Figure 5 , in another embodiment, the first upper plate 41 is an electromagnet, the first lower plate 42 is a permanent magnet material, and the conductive contact 60 includes two first conductive contacts 61 arranged at intervals. One of the first conductive contacts 61 is electrically connected to one end of the first upper plate 41, and the other first conductive contact 61 is electrically connected to the other end of the first upper plate 41, for applying a DC voltage to the first upper plate 41 to change its polarity. Correspondingly, the substrate 10 has two first conductive holes 17 arranged at intervals, and the same material as the first upper plate 41 is deposited in the two first conductive holes 17 to form two first conductive contacts 61.

[0097] Similarly, please continue to refer to Figure 5 , in some embodiments, the second upper plate 51 is an electromagnet, the second lower plate 52 is a permanent magnet material, and the conductive contact 60 includes two third conductive contacts 63 arranged at intervals. One of the third conductive contacts 63 can be electrically connected to one end of the second upper plate 51 through a first lead 510, and the other third conductive contact 63 can be electrically connected to the other end of the second upper plate 51 through another first lead 510, for applying a DC voltage to the second upper plate 51 to change its polarity. Correspondingly, the substrate 20 has two third conductive holes 23 arranged at intervals, and the third conductive holes 23 are used to respectively lead out the first leads 510.

[0098] Optionally, please refer to Figure 6, in another embodiment, both the first upper electrode plate 41 and the first lower electrode plate 42 are electromagnets. The conductive contacts 60 are electrically connected to the first upper electrode plate 41 and the first lower electrode plate 42 respectively, and are used to change the polarity of the electromagnets. The conductive contacts 60 include two spaced-apart first conductive contacts 61 and two spaced-apart second conductive contacts 62. One of the first conductive contacts 61 can be electrically connected to one end of the first upper electrode plate 41 through one of the first conductive holes 17 in the substrate 10, and the other first conductive contact 61 can be electrically connected to the other end of the first upper electrode plate 41 through another first conductive hole 17, so as to apply a DC voltage to the first upper electrode plate 41 to change its polarity. One of the second conductive contacts 62 can be electrically connected to one end of the first lower electrode plate 42 through a second conductive hole 18, and the other second conductive contact 62 can be electrically connected to the other end of the first lower electrode plate 42 through another second conductive hole 18, so as to apply a DC voltage to the first lower electrode plate 42 to change its polarity.

[0099] Similarly, both the second upper electrode plate 51 and the second lower electrode plate 52 are electromagnets. The conductive contacts 60 are electrically connected to the second upper electrode plate 51 and the second lower electrode plate 52 respectively, and are used to change the polarity of the electromagnets. The conductive contacts 60 further include two spaced-apart third conductive contacts 63 and two spaced-apart fourth conductive contacts 64. One of the third conductive contacts 63 can be electrically connected to one end of the second upper electrode plate 51 through a third conductive hole 23 on the substrate 20 and a first lead 510 inside it, and the other third conductive contact 63 can be electrically connected to the other end of the second upper electrode plate 51 through another third conductive hole 23 on the substrate 20 and another first lead 510 inside it, so as to apply a DC voltage to the second upper electrode plate 51 to change its polarity. One of the fourth conductive contacts 64 is electrically connected to one end of the second lower electrode plate 52 through a fourth conductive hole 24 on the substrate 20, and the other fourth conductive contact 64 is electrically connected to the other end of the second lower electrode plate 52 through another fourth conductive hole 24 on the substrate 20, so as to apply a DC voltage to the second lower electrode plate 52 to change its polarity.

[0100] It can be understood that the structure, material and principle of the second force application element 50 are similar to those of the first force application element 40, and will not be elaborated here. In addition, the principles on which the first force application element 40 and the second force application element 50 are based can be the same, that is, they can both be parallel plate capacitors, or structures based on the principle of magnetic laws; the principles on which the first force application element 40 and the second force application element 50 are based can be the same or different. For example, in some embodiments, the first force application element 40 can be a parallel plate capacitor based on the principle of attraction between opposite charges and repulsion between like charges, and the second force application element 50 can be a structure based on the principle of magnetic laws, and vice versa.

[0101] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of the present application will be introduced below:

[0102] When the strain film 101 is subjected to a pressure in the first direction ( Figure 3 the opposite direction of the Z direction in [[]], that is, the vertically downward direction), the strain film 101 also undergoes displacement in the first direction. At this time, a DC voltage can be applied between the first upper electrode 41 and the first lower electrode 42 respectively, so that the charges on the first upper electrode 41 are opposite to the charges on the first lower electrode 42. Under the action of the electrostatic force, the first upper electrode 41 and the first lower electrode 42 approach each other, and the strain film 101 on the substrate 10 undergoes displacement in the second direction ( Figure 3 the Z direction in [[]], that is, the vertically upward direction); and / or, a potential of the same kind of charge is applied between the second upper electrode 51 and the second lower electrode 52. Under the action of the electrostatic force, the second upper electrode 51 and the second lower electrode 52 repel each other, and the strain film 101 on the substrate 10 undergoes displacement in the second direction, thereby compensating for the deflection of the strain film 101, that is, reducing the deflection of the strain film 101 and reducing the influence of the deflection of the strain film 101 on the linearity of the test result. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is the initial value, such as zero, that is, the pressure in the first direction received by the strain film 101 is offset by the deformation force received after energization, so that the strain film 101 is restored to the initial flat state, the magnitude of the pressure in the second direction applied by the first force application element 40 and / or the second force application element 50 can be calculated according to the magnitude of the input voltage, so as to obtain the magnitude of the pressure in the first direction applied to the strain film 101 by the outside.

[0103] Optionally, when the strain film 101 is subjected to a pressure in the second direction ( Figure 3In the Z direction (i.e., the vertically upward direction), when a pressure is applied, the strain film 101 also undergoes displacement along the second direction. At this time, a DC voltage can be applied between the first upper electrode 41 and the first lower electrode 42 to make the charges on the first upper electrode 41 the same as those on the first lower electrode 42. Under the action of the electrostatic force, the first upper electrode 41 and the first lower electrode 42 repel each other, and the strain film 101 on the substrate 10 undergoes displacement along the first direction; and / or, a DC voltage is applied between the second upper electrode 51 and the second lower electrode 52 respectively to make the charges on the first upper electrode 41 opposite to those on the first lower electrode 42. Under the action of the electrostatic force, the second upper electrode 51 and the second lower electrode 52 attract each other, and the strain film 101 on the substrate 10 undergoes displacement along the first direction, thereby compensating for the deflection of the strain film 101, that is, reducing the deflection of the strain film 101 and reducing the influence of the deflection of the strain film 101 on the linearity of the test result. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is the initial value, such as zero, that is, when the pressure in the first direction applied to the strain film 101 cancels out the deformation force after energization, the strain film 101 is restored to the initial flat state. The magnitude of the pressure applied in the first direction by the first force-applying element 40 and / or the second force-applying element 50 can be calculated according to the magnitude of the input voltage, so as to obtain the magnitude of the pressure applied to the strain film 101 in the second direction by the outside.

[0104] Optionally, please refer to Figure 7 , in some other embodiments, the first force-applying element 40 and / or the second force-applying element 50 includes a deformation material layer that can deform along a specific direction after being energized. The deformation material layer includes a thermally deformable material layer or an electro-deformable material layer. The thermally deformable material layer refers to a material layer that deforms when heated. In some embodiments of the present application, the thermally deformable material layer can generate deformation by heating after being energized. The material of the thermally deformable material layer can be a metal such as platinum, nickel, tungsten, etc., or a thermoelectric braking material (such as a polymer carbon nanotube composite material, a composite material of a carbon nanotube layer and a vanadium dioxide layer), and an electrostrictive ceramic (Lead Zirconate Titanate / Piezoelectric ceramic material, PZT, [Pb(Zr ·(Ti)O3), or electrostrictive composite materials (Shape Memory Alloys, SMA), etc. The electro-deformable material layer refers to a material layer that can generate deformation under the action of an external electric field or magnetic field, and its material can include electrostrictive piezoelectric deformation materials, such as electrostrictive piezoelectric deformation materials (Electrostrictive Piezoelectric Deformation Materials, EDM) or electroactive piezoelectric composites (Electroactive Piezoelectric Composites, EAPC or EMS), etc., or electro-magneto-deformable materials, such as electromagnetic controllable insulators (Electromagnetic Controllable Insulator, EMIR), electromagnetic controllable magnetostrictive (Electromagnetic Controllable Magnetostrictive, EMM) or electromagnetically controllable composite materials (Electromagnetically Controllable Composite Materials, EMC), etc.

[0105] Optionally, in some embodiments, the thermally deformable material layer or the electro-deformable material layer may be conductive and electrically connected to the conductive contact 60. By setting the thermally deformable material layer or the electro-deformable material layer to be conductive, the thermally deformable material layer or the electro-deformable material layer can be directly electrically connected to the conductive contact 60 without the need to provide a conductive element on the thermally deformable material layer or the electro-deformable material layer. Therefore, the MEMS sensor 100 of the present application has a simple structure and is easy to fabricate.

[0106] Optionally, please also refer to Figure 8 and Figure 9 , in some embodiments, the first force-applying element 40 includes a first deformable material layer 43 disposed on the surface of the passivation layer 30 away from the substrate 10. The first deformable material layer 43 includes a first thermally deformable material layer 430 and a first conductive heating layer 431; the first conductive heating layer 431 is electrically connected to the second conductive contact 62 in the conductive contact 60. Among them, the material of the first conductive heating layer 431 can be metal, carbon material or polymer composite material, and the present application does not make specific limitations on this. In the embodiment of the present application, after the first conductive heating layer 431 is energized through the second conductive contact 62 in the conductive contact 60, it generates heat, and then transfers the heat to the first thermally deformable material layer 430 to make it heat up. Through such a design, the first thermally deformable material layer 430 can be an insulating material or a conductive material, and the selection range is wider. Optionally, the above first thermally deformable material layer 430 may be replaced with a first electro-deformable material layer.

[0107] In some embodiments, please continue to refer toFigure 8 The first conductive heating layer 431 and the first thermodeformable material layer 430 are stacked, and the first conductive heating layer 431 can transfer heat from the contact surface to the first thermodeformable material layer 430. The larger the contact surface, the faster the transfer. In other embodiments, see Figure 9 and Figure 10 The first conductive heat-generating layer 431 surrounds the first thermotropically deformable material layer 430 , and the heat of the first conductive heat-generating layer 431 can be transferred from the periphery to the center of the first thermotropically deformable material layer 430 . This heat transfer method can make the heat transfer more uniform.

[0108] Please also see Figure 11 The first deformable material layer 43 includes a plurality of first sub-deformable material layers 432 and a plurality of second sub-deformable material layers 433 that are spaced apart; the plurality of first sub-deformable material layers 432 and the plurality of second sub-deformable material layers 433 are alternately arranged along the Y direction; when power is supplied, the first sub-deformable material layer 432 and the second sub-deformable material layer 433 exert forces on the bottom wall of the groove 13 in opposite directions, and are independently controlled by two different pairs of first conductive contacts 61 and second conductive contacts 62.

[0109] Please continue to see Figure 7 In some embodiments, the second force-applying element 50 includes a second deformable material layer 53 disposed on the bottom surface of the groove 13. The second deformable material layer 53 is configured to be deformable when powered, thereby applying a force to the bottom wall of the groove 13 to move closer to or away from the substrate 20. The structure and material of the second deformable material layer 53 are substantially the same as those of the first deformable material layer 43. Please also refer to Figure 8 and Figure 9 , the second deformable material layer 53 includes a second thermo-deformable material layer 530 and a second conductive heating layer 531; the second conductive heating layer 531 is electrically connected to the third conductive contact 63 in the conductive contact 60. Among them, the material of the second conductive heating layer 531 can be metal, carbon material or polymer composite material, and the present application does not impose specific restrictions on this. In the embodiment of the present application, the second conductive heating layer 531 generates heat after being energized through the third conductive contact 63, and then transfers the heat to the second thermo-deformable material layer 530 to generate heat. In this way, the second thermo-deformable material layer 530 can be an insulating material or a conductive material, and the range of choices is wider. Optionally, the above-mentioned second thermo-deformable material layer 530 can be replaced by a second electro-deformable material layer.

[0110] Similarly, the second thermodeformable material layer 530 and the second conductive heat-generating layer 531 may be stacked. Figure 8 As shown, or, the second conductive heat-generating layer 531 surrounds the second thermodeformable material layer 530, as shown in FIG. Figure 9 shown.

[0111] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of the present application will be introduced as follows:

[0112] When the strain film 101 is subjected to a pressure in the first direction ( Figure 3 the opposite direction of the Z direction in the figure, that is, the vertically downward direction), the strain film 101 also undergoes displacement in the first direction. At this time, a DC voltage can be applied across both ends of the second force application element 50, so that the second force application element 50 (the second thermally deformable material layer 530) causes the strain film 101 to undergo displacement in the second direction due to the heating effect of the energization (in the Figures 8-11 shown structure); or a DC voltage is applied across both ends of the second force application element 50, so that the second force application element 50 (the second electro-deformable material layer, not shown in the figure, can also be 530) generates an extension in the third direction perpendicular to the first direction due to energization (in the Figures 8-11 shown structure). Since the corresponding region of the second force application element 50 in the sealed cavity is in a suspended state, when the second force application element 50 horizontally extends, a force in the second direction will be generated in the suspended region in the middle thereof, causing the strain film 101 to undergo displacement in the second direction. By causing the strain film 101 to undergo displacement in the second direction through the second force application element 50, the deflection of the strain film 101 is compensated, that is, the deflection of the strain film 101 is reduced, and the influence of the deflection of the strain film 101 on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure in the first direction applied to the strain film 101 is offset by the deformation force after energization, the magnitude of the pressure in the second direction applied by the second force application element 50 can be calculated according to the magnitude of the input voltage, so as to obtain the magnitude of the pressure in the first direction applied to the strain film 101 by the outside.

[0113] Optionally, when the strain film 101 is subjected to a pressure in the second direction ( Figure 3In the Z direction (i.e., the vertically upward direction), when the strain film 101 is under pressure, the strain film 101 also undergoes displacement along the second direction. At this time, a DC voltage can be applied to both ends of the first force-applying element 40, so that the first force-applying element 40 (the first thermally deformable material layer 430) causes the strain film 101 to undergo displacement along the first direction due to the heating effect of the energization; or the first force-applying element 40 (the first electro-deformable material layer, not shown in the figure, can also be 430) will generate a stretching force in the third direction perpendicular to the first direction due to energization. Since the corresponding area of the first force-applying element 40 in the sealed cavity is in a suspended state, when the first force-applying element 40 stretches horizontally, a force along the first direction will be generated in the suspended area in the middle, causing the strain film 101 to undergo displacement along the first direction. The displacement of the strain film 101 along the first direction is caused by the first force-applying element 40, thereby compensating for the deflection of the strain film 101, that is, reducing the deflection of the strain film 101 and reducing the influence of the deflection of the strain film 101 on the linearity of the test result. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure on the strain film 101 in the second direction is offset by the deformation force after energization, so that the strain film 101 is restored to the initial flat state. The magnitude of the pressure in the first direction applied by the first force-applying element 40 can be calculated according to the magnitude of the input voltage, thereby obtaining the magnitude of the pressure applied to the strain film 101 in the second direction by the outside.

[0114] It can be understood that in some other embodiments of the present application, the strain film 101 can also be displaced along the first direction by the second force-applying element 50, and the strain film 101 can be displaced along the second direction by the first force-applying element 40, which is related to the setting directions of the first electro-deformable material layer, the second electro-deformable material layer, the first thermally deformable material layer 430, and the second thermally deformable material layer 530. In the embodiments of the present application, the first force-applying element 40 and the second force-applying element 50 can be a combination of a deformable material layer and a parallel plate capacitor, or both can be deformable material layers, or both can be parallel plate capacitors, or one is a deformable material layer and the other is a parallel plate capacitor.

[0115] Exemplarily, in one embodiment, as Figure 7 shown, the first force-applying element 40 includes a first deformable material layer 43 disposed on the surface of the passivation layer 30 away from the substrate 10, and the second force-applying element 50 includes a second deformable material layer 53 disposed on the bottom surface of the groove 13. Both the first deformable material layer 43 and the second deformable material layer 53 are configured to be able to deform when energized, so as to apply a force to the bottom wall of the groove 13 to approach or move away from the substrate 20.

[0116] Optionally, in another embodiment, the first force - applying element 40 includes the parallel - plate capacitor in the foregoing embodiment, or includes the permanent - magnetic material and magnet in the foregoing embodiment, which will not be elaborated herein. The second force - applying element 50 includes a second deformation - material layer 53 disposed on the bottom surface of the groove 13, and the second deformation - material layer 53 is configured to be deformable when energized, so as to apply a force to the bottom wall of the groove 13 to approach or move away from the substrate 20.

[0117] Optionally, in yet another embodiment, both the first force - applying element 40 and the second force - applying element 50 include a deformation - material layer. Specifically, the first force - applying element 40 includes a first deformation - material layer 43 disposed on the surface of the passivation layer away from the substrate 10, and the first deformation - material layer 43 is configured to be deformable when energized, so as to apply a force to the bottom wall of the groove 13 to approach or move away from the substrate 20; the second force - applying element 50 includes a second lower plate 52 disposed on the surface of the substrate 20 exposed to the sealed cavity, and a second upper plate 51 disposed on the bottom surface of the groove 13, wherein the second upper plate 51 and the second lower plate 52 are configured to be mutually repulsive or mutually attractive when energized.

[0118] Optionally, please refer to Figure 12 and Figure 13 , in some embodiments, the first force - applying element 40 is the first deformation - material layer 43, the second force - applying element 50 includes a second upper plate 51 and a second lower plate 52, the second upper plate 51 is the above - mentioned second deformation - material layer 53, one end of the second upper plate 51 is electrically connected to a third conductive contact 63 through a first lead 510 and a third conductive hole 23, the other end of the second upper plate 51 is electrically connected to another third conductive contact 63 through another first lead 510 and another third conductive hole 23, and the second lower plate 52 is electrically connected to a fourth conductive contact 64 through a fourth conductive hole 24.

[0119] Please refer to Figure 14 , Figure 14 is a flowchart of a preparation method of the MEMS sensor 100 provided in some embodiments of the present application. The preparation method of the MEMS sensor 100 provided in some embodiments of the present application includes:

[0120] S10: Provide a substrate 10, and form a Wheatstone bridge circuit 14 and a passivation layer 30 on the second surface 12 of the substrate 10;

[0121] Among them, the substrate 10 has opposite first and second surfaces 11 and 12, the substrate 10 is a semiconductor substrate 10, for example, it can be an SOI (Silicon On Insulator) silicon wafer. According to the division based on the different doping of silicon materials and the conduction type, the substrate 10 can be an N - type or P - type single - crystal silicon wafer. Please refer to Figure 15, step S10 may include:

[0122] S11: Form four groups of varistors 140 and heavily doped ohmic contact regions 143 on the second surface 12 of the substrate 10;

[0123] Specifically, in some embodiments, a lightly doped varistor 140 and a heavily doped ohmic contact region 143 are fabricated by lithography and two ion implantations in sequence on the second surface 12 of the substrate 10. Among them, the heavily doped ohmic contact region 143 is used to electrically connect the varistor 140 to the subsequent conductive lead 144. Please refer to Figure 16 , Figure 16 which is a schematic diagram of the structure obtained after step S11.

[0124] S12: Form a dielectric layer 15 on the second surface 12 of the substrate 10;

[0125] The material of the dielectric layer 15 is an insulating material, such as one or both of an oxide layer and a nitride layer. In some embodiments, in step S12, a plasma-enhanced chemical vapor deposition (PECVD) method can be used to deposit an oxide layer with a thickness of 0.01 - 1 μm and a nitride layer with a thickness of 0.03 - 3 μm on the second surface 12 of the substrate 10 to form the dielectric layer 15. Please refer to Figure 17 , Figure 17 which is a schematic diagram of the structure obtained after step S12.

[0126] S13: Form a conductive lead 144 and a conductive region 142 on the dielectric layer 15;

[0127] In some embodiments, please refer to Figure 18 , step S13 further includes:

[0128] S131: Perform lithography on the side of the dielectric layer 15 away from the heavily doped ohmic contact region 143 to form a conductive lead hole 150;

[0129] Please refer to Figure 19 , Figure 19 which is a schematic diagram of the structure obtained after step S131.

[0130] S132: Perform metal sputtering and lithography at the conductive lead hole 150 to form a conductive lead 144 in the conductive lead hole 150 and form a conductive region 142 connected to the conductive lead 144 on the surface of the dielectric layer 15.

[0131] Among them, the conductive region 142 may include a metal pad. When metal sputtering is performed at the conductive lead 144, a first metal layer is formed on the second surface 12 of the substrate 10, and photolithography is performed on the first metal layer to form the conductive lead 144 and the conductive region 142. Among them, the thickness of the first metal layer may be 0.1 to 4 μm. For example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm or 4 μm, etc. This application does not make restrictions. Specifically, it can be selected according to needs. Please refer to Figure 20 and Figure 21 , Figure 20 is a schematic structural diagram obtained after step S132; Figure 21 is Figure 20 top view of.

[0132] S14: Form a passivation layer 30 on the dielectric layer 15. Among them, the position of the passivation layer 30 corresponding to the conductive region 142 is hollowed out so that the conductive region 142 is exposed.

[0133] In some embodiments, an oxide layer with a thickness of 0.01 to 1 μm and a nitride layer with a thickness of 0.03 to 3 μm are deposited on the surface of the dielectric layer 15 away from the heavily doped ohmic contact region 143 to form the passivation layer 30. The deposition method can be PECVD method. The position of the passivation layer 30 corresponding to the conductive region 142 in step S14 is hollowed out so that the conductive region 142 is exposed, which can also be realized in the following step S60. Please refer to Figure 22 and Figure 23 , Figure 22 is a schematic structural diagram obtained after step S14, Figure 23 is Figure 22 top view of.

[0134] S20: Form a first force-applying element 40 on the side of the passivation layer 30 away from the substrate 10;

[0135] Among them, in some embodiments, as Figure 3 shown, the first force-applying element 40 may include a first upper plate 41 and a first lower plate 42. Correspondingly, please refer to Figure 24 , step S20 includes:

[0136] S21: Form a first lower plate 42 on the surface of the passivation layer 30 away from the substrate 10;

[0137] Among them, metal sputtering is performed on the surface of the passivation layer 30 away from the substrate 10 to obtain a second metal layer, and photolithography is performed on the second metal layer. The thickness of the second metal layer can be 0.1 - 4 μm. For example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm or 4 μm, etc. This application does not make any restrictions and can be specifically selected according to needs. Please refer to Figure 25 , Figure 25 is Figure 24 the structural schematic diagram obtained after step S21 in

[0138] S22: Form a sacrificial layer 70 on one side of the passivation layer 30 away from the substrate 10;

[0139] In some embodiments, the material of the sacrificial layer 70 can be polyimide or phosphosilicate glass (PSG), and the sacrificial layer 70 is obtained by performing photolithography and etching on the deposited polyimide or phosphosilicate glass (PSG). Please refer to Figure 26 , Figure 26 is Figure 24 the structural schematic diagram obtained after step S22 in

[0140] S23: Deposit polysilicon on the sacrificial layer 70 and perform photolithography to form a first upper electrode plate 41;

[0141] Among them, the first upper electrode plate 41 has release holes, and the release holes are used to release the sacrificial layer 70 and the passivation layer 30 in the subsequent process. Please refer to Figure 27 , Figure 27 is Figure 24 the structural schematic diagram obtained after step S23 in

[0142] S30: Form a groove 13 on the first surface 11 of the substrate 10, and dispose at least a part of the second force application element 50 in the groove 13;

[0143] The formation method of the groove 13 is not limited. For example, the groove 13 can be formed by methods such as etching, solution corrosion or mechanical cutting. In some embodiments, please refer to Figure 3 , the second force application element 50 includes a second upper electrode plate 51 and a second lower electrode plate 52. Correspondingly, please refer to Figure 28 , step S30 includes:

[0144] S31: Form a groove 13 on the first surface 11 of the substrate 10;

[0145] Among them, the groove 13 can be formed by a bulk silicon etching process, and the etching can be physical etching or chemical etching. The cross-section of the groove 13 can be trapezoidal, with the short side of the trapezoid close to the second surface 12 and the long side of the trapezoid away from the second surface 12. Please refer to Figure 29, Figure 29 is Figure 28 the structural schematic diagram obtained after step S31 in

[0146] S32: Form a second upper electrode plate 51 on the bottom wall of the groove 13;

[0147] Specifically, during the process of forming the second upper electrode plate 51, leads (for example, the first lead 510) can also be formed on the first surface 11 of the substrate 10 simultaneously. In some embodiments, S32 further includes: performing metal sputtering inside the groove 13 to obtain a third metal layer, and performing photolithography on the third metal layer to form the second upper electrode plate 51 and the lead, the first lead 510, wherein the second upper electrode plate 51 is located at the bottom surface of the groove 13, and the first lead 510 is located at the side surface of the groove 13.

[0148] Wherein, the thickness of the third metal layer can be 0.1 - 4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm or 4 μm, etc., which is not limited in this application. Specifically, it can be selected according to needs. Please refer to Figure 30 , Figure 30 is Figure 28 the structural schematic diagram obtained after step S32 in

[0149] S40: Provide a substrate 20 and process the substrate 20;

[0150] The material of the substrate 20 can be a glass substrate or a ceramic substrate. The way to process the substrate 20 is related to the composition of the prepared MEMS sensor 100. Taking the Figure 3 shown MEMS sensor 100 as an example for introduction. Please refer to Figure 31 , step S40 further includes:

[0151] S41: Form a third conductive hole 23 and a fourth conductive hole 24 on the substrate 20;

[0152] In some embodiments, the third conductive hole 23 and the fourth conductive hole 24 can be formed on the substrate 20 by means of burning or etching, wherein the way of burning can be realized by the through-hole process (TGV process). Please refer to Figure 32 , Figure 32 is Figure 31 the structural schematic diagram obtained after step S41 in

[0153] S42: Perform metal filling and photolithography on the third conductive hole 23 and the fourth conductive hole 24 to form a third conductive contact 63 and a fourth conductive contact 64;

[0154] Please refer toFigure 33 , Figure 33 is Figure 31 the structural schematic diagram obtained after step S42 in

[0155] S43: Perform metal sputtering and photolithography on the side of the substrate 20 close to the substrate 10 to form the second lower plate 52.

[0156] Perform metal sputtering on the side of the substrate 20 close to the substrate 10 to obtain the fourth metal layer, and perform photolithography on the fourth metal layer to form the second lower plate 52. Among them, the thickness of the fourth metal layer can be 0.1 - 4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm or 4 μm, etc. This application does not limit, specifically, it can be selected according to needs. Please refer to Figure 34 , Figure 34 is Figure 31 the structural schematic diagram obtained after step S43 in

[0157] In step S40, it can also include: cleaning the substrate 20 to make the substrate 20 and the substrate 10 bond more tightly.

[0158] S50: Cover the groove 13 of the substrate 10 with the substrate 20 to form a sealed cavity, so that at least part of the second force - applying element 50 is located in the sealed cavity;

[0159] Please refer to Figure 35 , Figure 35 is Figure 14 the structural schematic diagram obtained after step S50 in . In some embodiments, the substrate 20 and the substrate 10 can be bonded and connected so that the second lower plate 52 and the second upper plate 51 are oppositely arranged, and at least part of the second force - applying element 50 is located in the sealed cavity. Optionally, in some embodiments, a first sealing ring can be arranged on the outer periphery of the first surface 11 of the substrate 10, a second sealing ring can be arranged on the outer periphery of one side of the substrate 20, and the first sealing ring and the second sealing ring are aligned and bonded. When preparing the MEMS sensor 100 as Figure 2 shown, bond the side of the substrate 10 with the groove 13 to the side of the substrate 20 where the second lower plate 52 is formed to form a sealed cavity. Among them, the sealed cavity is the space enclosed by the second upper plate 51, the second lower plate 52 and the substrate 20, and the second lower plate 52 and the second upper plate 51 are oppositely arranged in the sealed cavity.

[0160] Optionally, when preparing the MEMS sensor 100 as Figure 3 shown, this method further includes:

[0161] S60: Release the sacrificial layer 70 through the release holes 410 on the first upper electrode plate 41 to obtain the MEMS sensor 100.

[0162] Among them, the method of releasing the sacrificial layer 70 is not limited. For example, it can be through chemical etching, dry etching, laser burning, or mechanical peeling, etc. After releasing the sacrificial layer 70, the passivation layer 30 above the conductive region 142 can be removed by photolithography, so that the first upper electrode plate 41 and the conductive region 142 are exposed in the sealed cavity. Among them, the sealed cavity is the space enclosed by the first upper electrode plate 41, the first lower electrode plate 42, and the passivation layer 30.

[0163] The MEMS sensor 100 provided in the above embodiments of the present application realizes the measurement of the external pressure through the mutual compensation of the internal and external pressures of the cavity. The deformation amount of the strain film 101 is small, and it has a higher linearity; the measurement of the pressure can be embodied by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, and it has a higher sensitivity.

[0164] It should be noted that the positions, materials, sizes, functions, etc. of the various layer structures involved in the preparation method of the above MEMS sensor 100 of the present application can be the same as those in the implementation manner of the above MEMS sensor 100 of the present application. For the relevant detailed content, please refer to the above implementation manner, and will not be elaborated here.

[0165] The following elaborates on the exemplary embodiments of the MEMS sensor 100 applied to an electronic atomization device.

[0166] Please also refer to Figure 36 and Figure 37 , Figure 36 which is an electronic atomization device provided in some embodiments of the present application; Figure 37 is Figure 36 the functional module diagram of the electronic atomization device.

[0167] The electronic atomization device 1000 provided in the embodiments of the present application includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomization component 300; the control unit 1000B includes a MEMS sensor 100, a control circuit 400, and a power supply 500.

[0168] Among them, in some embodiments, the liquid storage component 200 is used to store the aerosol generation matrix. The aerosol generation matrix can be a solid matrix or a liquid substance of plant leaves with specific aromas or substances, and can generate aerosol for users to inhale under the condition of heating without combustion. Among them, the electronic atomization device 1000 of the present application can be used in different fields, such as medical treatment, beauty, or recreational inhalation, etc. The liquid storage component 200 has an aerosol intake end and an air outlet end.

[0169] The atomization component 300 is disposed on the airflow path from the air inlet end to the air outlet end and is used to atomize the aerosol - generating matrix. The manner in which the atomization component 300 generates the aerosol is not limited. For example, the aerosol - generating matrix can be atomized by ultrasonic oscillation or heating.

[0170] The MEMS sensor 100 is the MEMS sensor 100 provided in any of the above - mentioned embodiments. The MEMS sensor 100 is disposed on the airflow channel of the electronic atomization device 1000 and is used to detect the air pressure change in the airflow channel. The MEMS sensor 100 in this embodiment can be used as an airflow - activated switch. When the user sucks on the electronic atomization device 1000, the MEMS sensor 100 in this embodiment can be used to detect the user's sucking action and output a control signal to the control circuit 400, thereby driving the control circuit to output a voltage to the atomization component 300.

[0171] The power source 500 can be used to provide voltage to the atomization component 300 and the MEMS sensor 100. The power source 500 can be a rechargeable battery cell or a replaceable disposable battery cell, etc.

[0172] The control circuit 400 is electrically connected to the atomization component 300, the MEMS sensor 100, and the power source 500 respectively. The control circuit 400 is used to control the power source 500 to apply an electrical signal to the first biasing element 40 and / or the second biasing element 50 according to the change amount of the output voltage caused by the air pressure change of the MEMS sensor 100 in the airflow channel, so that the first biasing element 40 and / or the second biasing element 50 apply a force to the bottom wall of the groove 13 to approach or move away from the substrate 20, so that the change amount of the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold, thereby compensating for the drift of the resistance - pressure relationship of the piezoresistor 140 caused by the compressive deformation of the substrate 10.

[0173] It can be understood that the change in air pressure within the air flow channel will cause a change in the resistance value of the piezoresistor 140, thereby causing a change in the output voltage Vout of the MEMS sensor 100. The change amount of the output voltage Vout of the MEMS sensor 100 reflects the air pressure magnitude within the air flow channel, that is, the pressure magnitude received by the MEMS sensor 100. When the pressure received by the MEMS sensor 100 is greater than a certain value, that is, when the change amount of the output voltage Vout of the MEMS sensor 100 exceeds a preset threshold, the deformation of the substrate 10 under pressure causes a drift in the relationship between the resistance value of the piezoresistor 140 and the pressure. By applying a force close to or away from the substrate 20 to the bottom wall of the groove 13 through the first force-applying element 40 and / or the second force-applying element 50, so that when the change amount of the output voltage Vout of the MEMS sensor 100 is less than or equal to the preset threshold, the drift in the relationship between the resistance value of the piezoresistor 140 and the pressure caused by the deformation of the substrate 10 under pressure is compensated. The preset threshold is the change amount of the output voltage Vout corresponding to the drift in the relationship between the resistance value of the piezoresistor 140 and the pressure caused by the deformation of the substrate 10 under pressure, which can be obtained in advance through experiments.

[0174] In some embodiments, the control circuit 400 is further configured to detect whether the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 cancels out the deformation of the bottom wall of the groove 13 caused by the air pressure, and when it is detected that the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 cancels out the deformation of the bottom wall of the groove 13 caused by the air pressure, determine the magnitude of the air pressure according to the electrical signal applied to the first force-applying element 40 and / or the second force-applying element 50.

[0175] Specifically, the preset threshold is set to 0, and the control circuit 400 can be used to detect whether the change amount of the output voltage of the MEMS sensor 100 is 0, and when it is detected that the change amount of the output voltage Vout of the MEMS sensor 100 is 0, determine the magnitude of the air pressure according to the electrical signal applied to the first force-applying element 40 and / or the second force-applying element 50. Detecting that the change amount of the output voltage Vout of the MEMS sensor 100 is 0 means that the output voltage Vout of the MEMS sensor 100 returns to the initial value.

[0176] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 deforms due to air pressure, the control circuit 400 controls the power supply 500 to apply a voltage Vx to the first force-applying element 40 and / or the second force-applying element 50 to compensate for the generated deformation, so that the output voltage Vout of the compensated MEMS sensor 100 is restored to 0 (i.e., the change in the output voltage Vout is 0). When the voltage Vx applied to the first force-applying element 40 and / or the second force-applying element 50 is not 0, it is determined that the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 due to the voltage Vx compensates and offsets the deformation of the bottom wall of the groove 13 caused by the air pressure in the air flow channel. Furthermore, the air pressure magnitude can be obtained according to the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V, or 4V, etc., and the present application does not make specific limitations. The embodiments of the present application are introduced with an initial value of 0.

[0177] The working principle of the MEMS sensor 100 in this embodiment is described below in combination with the process of the user sucking the electronic atomization device 1000:

[0178] When the user starts to suck, in addition to generating negative pressure inside the electronic atomization device 1000, at this time, the MEMS sensor 100 is subjected to a pressure in the second direction ( Figure 3 the Z direction in the figure, that is, the vertically upward direction), and the bottom wall of the groove 13 generates a deformation in the second direction. Since the Wheatstone bridge circuit 14 includes a piezoresistor 140, the change in the resistance value of the piezoresistor 140 causes the output voltage Vout of the Wheatstone bridge circuit 14 to change. Based on the change in the output voltage Vout, the sucking action of the user can be detected. When the substrate 10 undergoes a displacement in the second direction, a voltage is applied to the first force-applying element 40 and / or the second force-applying element 50, so that the first force-applying element 40 and / or the second force-applying element 50 apply a force close to the substrate 20 to the bottom wall of the groove 13, thereby causing the bottom wall of the groove 13 to undergo a displacement in the first direction, so as to offset the displacement in the second direction caused by the air flow fluctuation, so that the output voltage Vout of the Wheatstone bridge circuit 14 returns to the initial value, such as the initial value of 0.

[0179] When the user sucks, in addition to generating negative pressure inside the electronic atomization device 1000, positive pressure may also be generated due to air flow fluctuations. Therefore, in addition to the displacement in the second direction, the bottom wall of the groove 13 may also generate a displacement in the first direction.

[0180] When the substrate 10 is subjected to a pressure in the first direction (blowing or air flow fluctuation), it will undergo a displacement in the first direction ( Figure 3In the opposite direction of the Z direction in China (i.e., the vertically downward direction), the displacement causes a change in the resistance value of the piezoresistor 140, which in turn causes a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on the change in the output voltage Vout, the change in air pressure can be detected. Therefore, a voltage is applied to both ends of the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to apply a force away from the substrate 20 to the bottom wall of the groove 13, thereby causing the bottom wall of the groove 13 to displace in the second direction, thus canceling out the displacement in the first direction caused by the above-mentioned first-direction pressure. When the above-mentioned displacement in the first direction and the displacement in the second direction are completely canceled out, the voltage output Vout value of the Wheatstone bridge circuit 14 returns to the initial value of 0.

[0181] It can be seen that depending on the installation position of the MEMS sensor 100 according to this embodiment, it can sensitively detect arbitrarily set pressures in the first direction and the second direction. Compared with the piezoresistive sensors in the related art, it not only has higher accuracy but also a wider application range.

[0182] For the MEMS sensor 100 of this embodiment, when the substrate 10 is subjected to gas pressure in the direction away from the substrate 20, a DC voltage can be applied to the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to apply a force close to the substrate 20 to the bottom wall of the groove 13, and this force cancels out the gas pressure received; when the substrate 10 is subjected to gas pressure in the direction close to the substrate 20, a DC voltage can be applied to the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to apply a force away from the substrate 20 to the bottom wall of the groove 13, and this force cancels out the gas pressure received, thereby keeping the substrate 10 always in a flat state. Therefore, during the entire suction process, the deformation amount of the substrate 10 is always small. Thus, the problem that the deformation of the substrate 10 does not change linearly with the pressure ideally is improved, thereby improving the detection accuracy of the MEMS sensor 100 in the embodiment of the present application.

[0183] In several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces, and the indirect couplings or communication connections of devices or units can be in electrical, mechanical, or other forms.

[0184] In addition, each functional unit in various embodiments of the present application may be integrated into one processing unit, may exist separately as individual physical units, or two or more units may be integrated into one unit. The above-mentioned integrated units may be implemented in the form of hardware or in the form of software functional units.

[0185] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A MEMS sensor, characterized in that: include: A substrate having a first surface and a second surface opposite to each other, wherein the first surface has a groove, and the second surface has a Wheatstone bridge circuit, wherein a bridge arm of the Wheatstone bridge circuit includes a varistor; a passivation layer covering the second surface of the substrate; A base plate, covering the groove to form a sealed cavity with the substrate; A first force applying element, at least partially disposed on a side of the passivation layer away from the substrate; A second force-applying element is at least partially disposed on the bottom wall of the groove; Conductive contacts, disposed on the substrate and / or the base plate, and electrically connected to the first force applying element and the second force applying element respectively; The first force applying element and the second force applying element are both configured to apply a force to the bottom wall of the groove to move closer to or away from the substrate when powered on.

2. The MEMS sensor according to claim 1, characterized in that: The first force applying element comprises: A first lower electrode plate is disposed on a surface of the passivation layer away from the substrate; A first upper electrode plate, spaced apart and arranged on a side of the first lower electrode plate away from the substrate; The first upper electrode plate and the first lower electrode plate are configured to repel or attract each other when powered on.

3. The MEMS sensor according to claim 2, characterized in that: The edge portion of the first upper electrode plate is arranged on the surface of the passivation layer away from the substrate, and the middle portion is suspended and arranged on the side of the first lower electrode plate away from the substrate; The middle part of the first upper electrode plate and the first lower electrode plate form a parallel plate capacitor; the conductive contacts include a first conductive contact electrically connected to the first upper electrode plate, and a second conductive contact electrically connected to the first lower electrode plate.

4. The MEMS sensor according to claim 2, characterized in that: One of the first upper plate and the first lower plate comprises a permanent magnetic material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or The first upper electrode plate and the first lower electrode plate are both electromagnets; the conductive contacts are electrically connected to the first upper electrode plate and the first lower electrode plate respectively, and are used to change the polarity of the electromagnets.

5. The MEMS sensor according to claim 1, characterized in that: The first force-applying element comprises a first deformable material layer disposed on a surface of the passivation layer away from the substrate, wherein the first deformable material layer is configured to deform when powered on, thereby applying a force to the bottom wall of the groove to move closer to or away from the substrate.

6. The MEMS sensor according to any one of claims 1 to 5, characterized in that: The second force applying element comprises: A second lower electrode plate is disposed on a surface of the substrate exposed to the sealed cavity; A second upper electrode plate is arranged on the bottom surface of the groove; The second upper electrode plate and the second lower electrode plate form a parallel plate capacitor; the conductive contacts include a third conductive contact electrically connected to the second upper electrode plate, and a fourth conductive contact electrically connected to the second lower electrode plate.

7. The MEMS sensor according to any one of claims 1 to 5, characterized in that: The second force applying element comprises: A second lower electrode plate is disposed on a surface of the substrate exposed to the sealed cavity; A second upper electrode plate is arranged on the bottom surface of the groove; Wherein, one of the second upper plate and the second lower plate comprises a permanent magnetic material, the other is an electromagnet, and the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or, The second upper electrode plate and the second lower electrode plate are both electromagnets; the conductive contacts are electrically connected to the second upper electrode plate and the second lower electrode plate respectively, and are used to change the polarity of the electromagnets.

8. The MEMS sensor according to any one of claims 1 to 5, characterized in that: The second force-applying element includes a second deformable material layer disposed on the bottom surface of the groove, and the second deformable material layer is configured to be deformable when powered, thereby applying a force to the bottom wall of the groove to move closer to or away from the substrate.

9. The MEMS sensor according to claim 1, characterized in that: The Wheatstone bridge circuit includes four groups of piezoresistors, which produce resistance changes in response to pressure changes applied to the substrate, thereby converting pressure signals into electrical signals; the Wheatstone bridge circuit also includes four groups of conductive areas for leading out the electrical signals.

10. The MEMS sensor according to claim 9, characterized in that: The substrate is a semiconductor substrate; each group of the varistors includes two sub-varistors that are parallel and spaced apart, and a heavily doped ohmic contact region formed between the sub-varistors, and the heavily doped ohmic contact region is used to electrically connect the sub-varistors in the group of the varistors.

11. The MEMS sensor according to claim 10, characterized in that: The varistor and the heavily doped ohmic contact region are formed on the substrate, the substrate is further covered with a dielectric layer, and the four groups of conductive regions are formed on the dielectric layer.

12. The MEMS sensor according to claim 11, characterized in that: The side of the dielectric layer away from the substrate is also covered with the passivation layer, and the four groups of conductive areas are respectively at least partially exposed from the passivation layer.

13. An electronic atomization device, characterized in that: include: A liquid storage component, used for storing an aerosol generating matrix; an atomizing assembly, for atomizing the aerosol-generating substrate; The MEMS sensor is a MEMS sensor as claimed in any one of claims 1 to 12; the MEMS sensor is arranged on the air flow channel of the electronic atomization device, and is used to detect the air pressure change in the air flow channel; A power supply is used to provide voltage to the atomization assembly and the MEMS sensor.

14. The electronic atomization device according to claim 13, characterized in that: Also includes: A control circuit is electrically connected to the power supply, the atomization assembly and the MEMS sensor respectively; The control circuit is used to control the power supply to apply an electrical signal to the first force element and / or the second force element according to the change in the output voltage of the MEMS sensor caused by the change in air pressure in the air flow channel, so that the first force element and / or the second force element applies a force to the bottom wall of the groove closer to or away from the substrate, so that the change in the output voltage of the MEMS sensor is less than or equal to a preset threshold.

15. The electronic atomization device according to claim 14, characterized in that: The preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when it is detected that the change in the output voltage of the MEMS sensor is zero, determine the magnitude of the air pressure based on the electrical signal applied to the first force element and / or the second force element.

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