Etching device
By designing an etching device, the solution in the cleaning tank or the low metal ion solution processed by the treatment tank is refluxed into the etching tank to dilute the concentration of metal ions, which solves the problems of reduced etching efficiency and waste of resources, and achieves efficient etching and resource recovery.
Patent Information
- Application Number
- CN202421585793.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-05
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-07-05
AI Technical Summary
During the preparation of solar cell cells, the increase in the concentration of metal ions in the etching tank leads to a decrease in etching efficiency, and the formed metal ion solution is difficult to recycle and reuse, resulting in waste of resources and environmental pollution.
An etching device is designed to form a reusable second etching liquid by refluxing the solution in the cleaning tank or the low metal ion solution processed by the treatment tank into the etching tank, diluting the concentration of metal ions, improving the etching efficiency, and reducing the concentration of metal ions through the treatment device to form a reusable second etching liquid.
It effectively reduces the concentration of metal ions in the etching tank, improves the etching efficiency, reduces the emission of metal ions, and realizes resource recycling and environmental friendliness.
Smart Images
Figure CN222928752U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of preparing metal grid lines for battery wafers, and particularly relates to an etching device. Background Art
[0002] In the solar manufacturing process, electroplating process is required to prepare metal grid lines. Generally, a seed layer (such as a metal copper layer) needs to be formed on a battery wafer (semi-finished product) first, and then the metal grid lines are electroplated on the seed layer. The reason is that when the metal grid lines are directly electroplated on the battery wafer, the contact force is small and it is easy to fall off, while the contact force between the metal grid lines and the seed layer is large, which can reduce the risk of the metal grid lines falling off.
[0003] After electroplating the metal grid lines, the seed layer needs to be removed. Generally, an acid solution is used to etch and remove the seed layer. As the etching progresses, the concentration of metal ions formed by etching in the etching tank will increase, resulting in a decrease in the etching efficiency. And the metal ion solution formed by etching is generally treated and then discharged as wastewater.
[0004] Therefore, there is an urgent need for an etching device to solve the above technical problems. Summary of the Utility Model
[0005] The purpose of the utility model is to provide an etching device, which can realize the recycling of the low-concentration metal ion solution back to the etching tank for reuse, dilute the concentration of metal ions in the etching tank, and improve the etching efficiency.
[0006] To achieve the above purpose, the utility model adopts the following technical solutions:
[0007] An etching device, which includes an etching tank for etching the seed layer of a battery wafer, a treatment tank for treating the first etching solution, and a cleaning tank for cleaning the battery wafer with the etched seed layer. The treatment tank includes a treatment device and a recovery chamber communicated with the treatment device. The treatment device is used to reduce the concentration of metal ions in the first etching solution to form a second etching solution flowing into the recovery chamber;
[0008] The etching tank and the treatment device are communicated through a first pipeline, so that the first etching solution in the etching tank can flow into the treatment device. The etching tank and the recovery chamber are communicated through a second pipeline, so that the second etching solution in the recovery chamber can flow into the etching tank;
[0009] Wherein, the first etching solution is an etching solution containing high-concentration metal ions, and the second etching solution is an etching solution containing low-concentration metal ions.
[0010] Optionally, the cleaning tank returns the cleaning solution to the etching tank through a third pipeline to dilute the metal ions in the first etching solution.
[0011] Optionally, the cleaning tank refluxes the cleaning liquid to the treatment tank through a third pipeline to dilute the metal ions in the second etching liquid.
[0012] Optionally, the cleaning tank is communicated with the first pipeline through a third pipeline so that the first mixed liquid flows into the treatment device in the treatment tank, and the treatment device is used to reduce the concentration of metal ions in the first mixed liquid and then form the second etching liquid flowing into the recovery cavity; wherein, the first mixed liquid is a mixed solution of the cleaning liquid and the first etching liquid.
[0013] Optionally, a wind shear mechanism is further arranged between the etching tank and the cleaning tank for blowing off and collecting the first etching liquid carried on the battery chip;
[0014] The wind shear mechanism is communicated with the third pipeline through a branch pipe, so that the etching liquid blown off by the wind shear mechanism flows to the first pipeline along with the cleaning liquid in the third pipeline and finally flows to the treatment device in the treatment tank; the treatment device is used to reduce the concentration of metal ions in the second mixed liquid and then form the second etching liquid flowing into the recovery cavity; wherein, the second mixed liquid is a mixed solution of the etching liquid blown off by the wind shear mechanism, the cleaning liquid and the first etching liquid.
[0015] Optionally, a wind shear mechanism is further arranged between the etching tank and the cleaning tank for blowing off and collecting the first etching liquid carried on the battery chip;
[0016] The wind shear mechanism is communicated with the first pipeline through the third pipeline so that the third mixed liquid flows into the treatment device in the treatment tank, and the treatment device is used to reduce the concentration of metal ions in the third mixed liquid and then form the second etching liquid flowing into the recovery cavity; wherein, the third mixed liquid is a mixed solution of the etching liquid blown off by the wind shear mechanism and the first etching liquid.
[0017] Optionally, a wind shear mechanism is further arranged downstream of the cleaning tank for blowing off and collecting the cleaning liquid carried on the battery chip;
[0018] The wind shear mechanism is communicated with at least one of the cleaning tank and the etching tank through a pipeline.
[0019] Optionally, the wind shear mechanism is communicated with the cleaning tank through a fourth pipeline to reflux the blown-off cleaning liquid back to the cleaning tank; or, the wind shear mechanism is communicated with the etching tank through a fourth pipeline to reflux the blown-off cleaning liquid back to the etching tank.
[0020] Optionally, valves are arranged on at least part of the pipelines, pumps are arranged on at least part of the pipelines, and a concentration meter is installed in at least one of the etching tank, the cleaning tank and the treatment tank;
[0021] The valve, pump, and concentration meter are all communicatively connected to the controller, and the controller is used to control the operation of the pump and valve according to the concentration information fed back by the concentration meter.
[0022] Optionally, the processing device includes a processing chamber containing an oxidant to oxidize metal ions in the first etching solution through the oxidant, thereby reducing the concentration of metal ions in the first etching solution; alternatively, the processing device includes a concentration device containing a high-pressure reverse osmosis membrane, and the low-concentration solution discharged from the concentration device forms a second etching solution.
[0023] Advantages of the embodiments of the present invention:
[0024] An embodiment of the present invention provides an etching device. By returning the solution in the cleaning tank or the solution with lower metal ions processed by the processing device in the processing tank to the etching tank, not only can the content of metal ions in the etching tank be reduced, but also the metal ion solution generated during the etching process can be processed and recycled. This not only avoids the additional addition of acid solution but also reduces the emission of metal ions, thereby facilitating energy conservation and emission reduction and improving the etching efficiency. Moreover, the metal crystals obtained by the treatment can be recycled, making the entire etching device more environmentally friendly. Description of the Drawings
[0025] Figure 1 is a schematic structural diagram of an etching device provided by Embodiment 1 of the present invention;
[0026] Figure 2 is a schematic structural diagram of an etching device provided by Embodiment 2 of the present invention;
[0027] Figure 3 is a schematic structural diagram of an etching device provided by Embodiment 3 of the present invention;
[0028] Figure 4 is a schematic structural diagram of an etching device provided by Embodiment 4 of the present invention;
[0029] Figure 5 is a schematic structural diagram of an etching device provided by Embodiment 5 of the present invention;
[0030] Figure 6 is a schematic structural diagram of an etching device provided by Embodiment 6 of the present invention.
[0031] In the figure:
[0032] 1. Etching tank; 2. Cleaning tank; 3. Processing tank; 31. Processing device; 32. Recovery chamber; 41. First pipeline; 42. Second pipeline; 43. Third pipeline; 431. Branch pipe; 44. Fourth pipeline; 5. Wind shear mechanism; 6. Concentration meter. Detailed Embodiments
[0033] The present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present utility model, rather than limiting the present utility model. In addition, it should be noted that for the sake of convenience of description, only the parts related to the present utility model rather than all the structures are shown in the drawings.
[0034] In the description of the present utility model, unless otherwise clearly defined and limited, the terms "connected", "connected to", and "fixed" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be directly connected, or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0035] In the present utility model, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through other features therebetween. Moreover, the first feature being "above", "above and to the right", and "above and to the left" of the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature. The first feature being "below", "below and to the right", and "below and to the left" of the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the first feature has a lower horizontal height than the second feature.
[0036] In the description of this embodiment, the orientation or positional relationships such as "above", "below", "left", and "right" are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of description and simplifying the operation, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present utility model. In addition, the terms "first" and "second" are only used for distinction in description and do not have special meanings.
[0037] Embodiment 1
[0038] This embodiment provides an etching device for stripping a seed layer.
[0039] It should be noted that Figure 1 the X direction in is the process direction for stripping the seed layer, and the arrow direction in the pipeline is the solution flow direction.
[0040] Please refer to Figure 1, specifically, the etching device includes an etching tank 1 for etching the seed layer of the cell, a treatment tank 3 for treating the first etching solution, and a cleaning tank 2 for cleaning the cell with the etched seed layer. The treatment tank 3 includes a treatment device 31 and a recovery chamber 32 communicated with the treatment device 31. The treatment device 31 is used to reduce the concentration of metal ions in the first etching solution to form a second etching solution flowing into the recovery chamber 32.
[0041] The etching tank 1 and the treatment device 31 are communicated through a first pipeline 41 so that the first etching solution in the etching tank 1 can flow into the treatment device 31. The etching tank 1 and the recovery chamber 32 are communicated through a second pipeline 42 so that the second etching solution in the recovery chamber 32 can flow into the etching tank 1.
[0042] Among them, the first etching solution is an etching solution containing a high concentration of metal ions, and the second etching solution is an etching solution containing a low concentration of metal ions.
[0043] In the etching device of this embodiment, by communicating the cleaning tank 2 with the etching tank 1, the cleaning solution with a lower concentration of metal ions in the cleaning tank 2 flows back to the etching tank 1, achieving the purpose of diluting the concentration of metal ions contained in the first etching solution in the etching tank 1.
[0044] Specifically, in this embodiment, the cleaning tank 2 returns the cleaning solution to the etching tank 1 through a third pipeline 43 to dilute the metal ions in the first etching solution. The concentration of metal ions contained in the cleaning solution in the cleaning tank 2 and the concentration of metal ions contained in the etching solution in the etching tank 1 are monitored by a concentration meter 6. At an appropriate time, the valves and pumps on the third pipeline 43 are controlled by a controller to work, so that the cleaning solution with a lower metal ion concentration in the cleaning tank 2 flows back into the etching tank 1 through the third pipeline 43, thereby diluting the first etching solution containing a high concentration of metal ions in the etching tank 1, thereby achieving the purpose of reducing the concentration of the first etching solution.
[0045] Embodiment 2
[0046] This embodiment provides an etching device. The difference between this embodiment and Embodiment 1 is that the cleaning solution in the cleaning tank 2 does not directly flow back into the etching tank 1 through the third pipeline 43, but the cleaning solution in the cleaning tank 2 first flows into the recovery chamber 32 through the third pipeline 43 and is mixed with the second etching solution in the recovery chamber 32 to first reduce the concentration of metal ions contained in the second etching solution. Then, the second etching solution with reduced metal ion concentration flows back to the etching tank 1 through the second pipeline 42 to dilute the first etching solution with a higher metal ion concentration in the etching tank 1.
[0047] Please refer to Figure 2, in this embodiment, the inflow end of the third pipe 43 is connected to the cleaning tank 2, and its outflow end is connected to the recovery chamber 32, so that the cleaning liquid in the cleaning tank 2 flows into the recovery chamber 32 through the third pipe 43 and is mixed with the second etching liquid in the recovery chamber 32, thereby diluting the metal ion concentration contained in the second etching liquid. The controller monitors through the concentration meter 6 and, at an appropriate time, controls the valves and pumps on the second pipe 42 and the third pipe 43 to work, so that the metal ion solution in the cleaning tank 2 flows into the recovery chamber 32 through the third pipe 43, thereby diluting the second etching liquid. Then, the diluted second etching liquid flows back into the etching tank 1 through the second pipe 42 to dilute the first etching liquid in the etching tank 1.
[0048] Optionally, the cleaning tank 2 returns the solution to the recovery chamber 32 through the third pipe 43, that is, the cleaning tank 2 and the recovery chamber 32 are connected through the third pipe 43, so that the cleaning liquid in the cleaning tank 2 first dilutes the second etching liquid in the recovery chamber 32, and the diluted second etching liquid then flows into the etching tank 1 and is mixed with the first etching liquid in the etching tank 1, thereby diluting the first etching liquid. By changing the way the cleaning liquid in the cleaning tank 2 flows back into the etching tank 1 in the first embodiment, a stepped dilution method can be used to dilute the first etching liquid, avoiding the first etching liquid in the etching tank 1 being mixed with solutions of different concentrations at the same time, which helps to stably dilute the metal ion concentration in the first etching liquid.
[0049] Embodiment Three
[0050] This embodiment provides an etching device. The difference between this embodiment and the second embodiment is that the outflow end of the third pipe 43 is not connected to the recovery chamber 32, but directly connected to the first pipe 41, so that the cleaning liquid flowing out of the cleaning tank 2 is mixed with the first etching liquid flowing out of the etching tank 1, and then flows into the processing device 31 in the processing tank 3 through the first pipe 41. The second etching liquid after being processed by the processing device 31 then flows back into the etching tank 1 through the recovery chamber 32 and the second pipe 42 in sequence, thereby stably reducing the metal ion concentration contained in the first etching liquid.
[0051] Please refer to Figure 3, in this embodiment, the inflow end of the third pipeline 43 is connected to the cleaning tank 2, and the outflow end of the third pipeline 43 is connected to the first pipeline 41. When the valves and pumps on the first pipeline 41 work to transport the solution in the etching tank 1 to the processing device 31 in the processing tank 3, the valves and pumps on the third pipeline 43 also work to transport the solution in the cleaning tank 2 into the first pipeline 41. As a result, the cleaning liquid in the cleaning tank 2 is transported to the processing device 31 in the processing tank 3 together with the first etching liquid in the etching tank 1. After being processed by the processing device 31 to form the second etching liquid, and then passing through the recovery chamber 32, the valves and pumps on the second pipeline 42 are opened to transport the obtained second etching liquid back to the etching tank 1, thereby diluting the first etching liquid.
[0052] Optionally, the cleaning tank 2 is connected to the first pipeline 41 through the third pipeline 43, so that the cleaning liquid in the third pipeline 43 is mixed with the first etching liquid in the first pipeline 41, thereby initially diluting the first etching liquid in the first pipeline 41. Then, the initially diluted first etching liquid enters the processing device 31 in the processing tank 3. By changing the interface position of the outflow end of the third pipeline 43, the cleaning liquid in the cleaning tank 2 can initially dilute the first etching liquid flowing out of the etching tank 1. After being processed by the processing device 31, the second etching liquid is formed and flows into the recovery chamber 32, and then flows back to the etching tank 1 through the second pipeline 42. This can not only reduce the metal ion concentration in the second etching liquid flowing back to the etching tank 1, but also reduce the impurities in the second etching liquid and improve the etching efficiency.
[0053] Embodiment 4
[0054] This embodiment provides an etching device. The difference between this embodiment and Embodiment 3 is that an air knife mechanism 5 is additionally provided between the etching tank 1 and the cleaning tank 2. The etching liquid blown off by the air knife mechanism 5 flows into the third pipeline 43, and then flows into the first pipeline 41 together with the cleaning liquid in the cleaning tank 2. Then, it enters the processing device 31 in the processing tank 3 together with the first etching liquid flowing from the etching tank 1 to the processing tank 3 for processing. After processing, the second etching liquid is obtained. Then, the second etching liquid enters the recovery chamber 32 and then flows back to the etching tank 1 through the second pipeline 42 to dilute the metal ion concentration in the first etching liquid in the etching tank 1.
[0055] Please refer to Figure 4, in this embodiment, the inflow end of the branch pipe 431 is connected to the air shearing mechanism 5, and its outflow end is connected to the third pipe 43. The first etching solution blown down by the air shearing mechanism 5 will flow into the third pipe 43 through the branch pipe 431, and flow into the first pipe 41 together with the cleaning solution flowing out of the cleaning tank 2. Then, it enters the processing device 31 in the processing tank 3 together with the first etching solution flowing from the etching tank 1 to the processing tank 3. After being processed by the processing device 31, a second etching solution is formed. The second etching solution then flows back into the etching tank 1 through the second pipe 42 and mixes with the first etching solution in the etching tank 1, thereby diluting the first etching solution in the etching tank 1.
[0056] Optionally, an air shearing mechanism 5 is further provided between the etching tank 1 and the cleaning tank 2. The air shearing mechanism 5 is connected to the third pipe 43 through the branch pipe 431, so that the first etching solution blown down by the air shearing mechanism 5 flows through the branch pipe 431 and the cleaning solution in the third pipe 43 to the first pipe 41, and finally flows to the processing device 31 in the processing tank 3. The function of the air shearing mechanism 5 is to blow down the first etching solution on the battery chip, thereby preventing the first etching solution on the battery chip from entering the cleaning tank 2, thus avoiding the too rapid increase in the metal ion concentration of the cleaning solution in the cleaning tank 2, avoiding the cleaning solution from being replaced too quickly, and thus increasing the service life of the cleaning solution.
[0057] Embodiment Five
[0058] This embodiment provides an etching device. The difference between this embodiment and Embodiment Four is that the position of the air shearing mechanism 5 is downstream of the cleaning tank 2, rather than between the cleaning tank 2 and the etching tank 1. This makes the cleaning solution blown down by the air shearing mechanism 5 not the first etching solution on the battery chip, but the cleaning solution on the battery chip after being cleaned by the cleaning tank 2. Blowing down the cleaning solution on the battery chip can prevent the cleaning solution from being carried away by the cleaned battery chip, thereby avoiding a reduction in the total amount of metal ions and the amount of cleaning solution in the circulation system composed of the etching tank 1, the cleaning tank 2, and the processing tank 3, thereby reducing the waste of metal ions and avoiding the pollution of the environment by the metal ions carried away by the battery chip.
[0059] Please refer to Figure 5 , in this embodiment, the inflow end of the third pipe 43 is connected to the cleaning tank 2, and the outflow end of the third pipe 43 is connected to the first pipe 41. The air shearing mechanism 5 is connected to the inflow end of the fourth pipe 44, and the outflow end of the fourth pipe 44 is connected to the cleaning tank 2, and the valve of the fourth pipe 44 is always open, so that the cleaning solution blown down by the air shearing mechanism 5 can flow back into the cleaning tank 2 in real time, thereby reducing the loss of the cleaning solution in the cleaning tank 2.
[0060] Optionally, a wind shear mechanism 5 is also provided on the cleaning tank 2, and the wind shear mechanism 5 is connected to the cleaning tank 2 through a fourth pipe 44. By connecting the wind shear mechanism 5 to the cleaning tank 2 through the fourth pipe 44, the cleaning liquid blown off by the wind shear mechanism 5 can be returned to the cleaning tank 2 in real time, so as to avoid the battery cells taking away some metal ions in the cleaning liquid after passing through the cleaning tank 2, thereby avoiding the cleaning liquid content in the cleaning tank 2 from being sharply reduced after a long period of battery cell cleaning operation.
[0061] Embodiment 6
[0062] This embodiment provides an etching device. The difference between this embodiment and embodiment 5 is that the outflow end of the fourth pipe 44 is not connected to the cleaning tank 2, but is connected to the etching tank 1, so that the cleaning liquid blown off by the wind shear mechanism 5 flows into the etching tank 1 in real time, thereby diluting the metal ion concentration contained in the first etching liquid in the etching tank 1 in real time, thereby slowing down the speed of reduction of etching efficiency.
[0063] Please refer to Figure 6 In this embodiment, the wind shear mechanism 5 is arranged after the cleaning tank 2, and the wind shear mechanism 5 is connected to the etching tank 1 through the fourth pipe 44. The valve on the fourth pipe 44 is always open, so that the cleaning liquid containing metal ions blown off the battery cell by the wind shear mechanism 5 can flow into the etching tank 1 in real time, thereby reducing the metal ion concentration contained in the first etching solution in the etching tank 1 in real time, and then slowing down the speed of increasing the metal ion concentration in the etching tank 1.
[0064] Optionally, the wind shear mechanism 5 is connected to the etching groove 1 through a fourth pipe 44, so that the cleaning liquid containing metal ions blown off by the wind shear mechanism 5 can flow into the etching groove 1 in real time through the fourth pipe 44. Since the metal ion concentration contained in the cleaning liquid is relatively low, while the metal ion concentration contained in the first etching liquid in the etching groove 1 is relatively high, the metal ion concentration of the first etching liquid in the etching groove 1 can be reduced in real time, so as to slow down the rate of increase of the metal ion concentration in the etching groove 1.
[0065] It should be noted that: the treatment device 31 in the first, second, third, fourth, fifth and sixth embodiments includes a treatment chamber containing an oxidant, so that the metal ions in the first etching solution are oxidized by an oxidant such as hydrogen peroxide or ozone, which can oxidize copper ions into copper element, thereby reducing the concentration of the metal ions in the first etching solution; or, the treatment device 31 includes a concentrator including a high-pressure reverse osmosis membrane, and the low-concentration solution discharged from the concentrator is formed into the second etching solution;
[0066] Embodiments five and six can be improved in combination with embodiment three.
[0067] Obviously, the above embodiments of the present utility model are merely examples for clearly illustrating the present utility model, rather than limitations on the implementation manners of the present utility model. For those of ordinary skill in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present utility model. It is not necessary and impossible to enumerate all implementation manners here. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present utility model shall be included within the protection scope of the claims of the present utility model.
Claims
1. Etching device, characterized in that The etching device comprises an etching tank (1) for etching the seed layer of the cell, a processing tank (3) for processing the first etching solution, and a cleaning tank (2) for cleaning the cell having the etched seed layer, the processing tank (3) comprising a processing device (31) and a recovery chamber (32) connected to the processing device (31), the processing device (31) being used to reduce the concentration of metal ions in the first etching solution to thereby form a second etching solution that flows into the recovery chamber (32); The etching tank (1) and the processing device (31) are connected via a first pipe (41) so that the first etching liquid in the etching tank (1) can flow into the processing device (31); the etching tank (1) and the recovery chamber (32) are connected via a second pipe (42) so that the second etching liquid in the recovery chamber (32) can flow into the etching tank (1); The first etching solution is an etching solution containing high-concentration metal ions, and the second etching solution is an etching solution containing low-concentration metal ions.
2. The etching device according to claim 1, characterized in that: The cleaning tank (2) refluxes the cleaning liquid to the etching tank (1) through the third pipe (43) to dilute the metal ions in the first etching liquid.
3. The etching device according to claim 1, characterized in that: The cleaning tank (2) refluxes the cleaning liquid to the processing tank (3) through the third pipe (43) to dilute the metal ions in the second etching solution.
4. The etching device according to claim 1, characterized in that: The cleaning tank (2) is connected to the first pipe (41) through a third pipe (43) so that the first mixed liquid flows into the treatment device (31) in the treatment tank (3), and the treatment device (31) is used to reduce the concentration of metal ions in the first mixed liquid and thereby form a second etching liquid that flows into the recovery chamber (32); wherein the first mixed liquid is a mixed solution of the cleaning liquid and the first etching liquid.
5. The etching device according to claim 4, characterized in that: A wind shear mechanism (5) is also provided between the etching tank (1) and the cleaning tank (2) for blowing off and collecting the first etching liquid carried on the battery cell; The wind shear mechanism (5) is connected to the third pipe (43) through a branch pipe (431), so that the etching liquid blown off by the wind shear mechanism (5) flows to the first pipe (41) through the branch pipe (431) along with the cleaning liquid in the third pipe (43), and finally flows to the treatment device (31) in the treatment tank (3); the treatment device (31) is used to reduce the concentration of metal ions in the second mixed liquid and thus form a second etching liquid that flows into the recovery chamber (32); wherein the second mixed liquid is a mixed solution of the etching liquid blown off by the wind shear mechanism (5), the cleaning liquid and the first etching liquid.
6. The etching device according to claim 1, characterized in that: A wind shear mechanism (5) is also provided between the etching tank (1) and the cleaning tank (2) for blowing off and collecting the first etching liquid carried on the battery cell; The wind shear mechanism (5) is connected to the first pipeline (41) through a third pipeline (43) so that the third mixed liquid flows into the treatment device (31) in the treatment tank (3), and the treatment device (31) is used to reduce the concentration of metal ions in the third mixed liquid and thereby form a second etching liquid that flows into the recovery chamber (32); wherein the third mixed liquid is a mixed solution of the etching liquid blown off by the wind shear mechanism (5) and the first etching liquid.
7. The etching device according to claim 1, characterized in that: A wind shear mechanism (5) is also provided downstream of the cleaning tank (2) for blowing off and collecting the cleaning liquid carried on the battery cells; The wind shear mechanism (5) is connected to at least one of the cleaning tank (2) and the etching tank (1) through a pipeline.
8. The etching device according to claim 7, characterized in that: The wind shear mechanism (5) is connected to the cleaning tank (2) via a fourth pipe (44) so as to return the blown-off cleaning liquid to the cleaning tank (2); or, the wind shear mechanism (5) is connected to the etching tank (1) via a fourth pipe (44) so as to return the blown-off cleaning liquid to the etching tank (1).
9. The etching device according to any one of claims 1 to 8, characterized in that: At least part of the pipeline is provided with a valve, at least part of the pipeline is provided with a pump, and at least one of the etching tank (1), the cleaning tank (2) and the processing tank (3) is installed with a concentration meter (6); The valve, pump and concentration meter (6) are all communicatively connected to a controller, and the controller is used to control the operation of the pump and valve according to concentration information fed back by the concentration meter (6).
10. The etching device according to any one of claims 1 to 8, characterized in that: The treatment device (31) includes a treatment chamber containing an oxidant, so as to oxidize the metal ions in the first etching solution by the oxidant to reduce the concentration of the metal ions in the first etching solution; or, the treatment device (31) includes a concentrating device containing a high-pressure reverse osmosis membrane, and the low-concentration solution discharged from the concentrating device is formed into a second etching solution.