Atomic layer deposition processing equipment

Abstract

The utility model relates to atomic layer deposition processing equipment, which comprises a reaction cavity, an atomic layer deposition module and a moving unit, the reaction chamber comprises an upper part, a lower part and a deposition chamber formed by the upper part and the lower part. The atomic layer deposition module comprises an upper spraying seat and a lower spraying seat, the upper spraying seat is arranged on the upper portion and located in an upper space, the lower spraying seat is arranged on the lower portion and located in a lower space and is separated from the upper spraying seat, and a workpiece to be machined is clamped between the upper spraying seat and the lower spraying seat. The moving unit is connected with the atomic layer deposition module. The moving unit drives the atomic layer deposition module to turn over so that the atomic layer deposition module can be switched between a first deposition mode and a second deposition mode.

Description

Technical Field

[0001] The utility model relates to an atomic layer deposition process equipment, in particular to an atomic layer deposition process equipment for double-sided deposition. Background Art

[0002] Atomic layer deposition (ALD) is a process that can deposit substances layer by layer on the surface of a workpiece in the form of a single atomic layer. Precursors are sequentially introduced into the reaction chamber, and a single-layer thin film is formed by the reaction of the precursors with the surface of the substrate. Then, layer by layer deposition and stacking are carried out to form a thin film. Further, the atomic layer deposition technology can also use plasma assistance, so that it is not limited by the reaction temperature of the precursor, and a high-density and low-impurity thin film can be grown in a low-temperature environment to meet the requirements of miniaturization of semiconductor components.

[0003] However, the deposition process is carried out in a vacuum environment. For the need of double-sided deposition, after the workpiece completes single-sided deposition and wants to deposit on the other side, the vacuum needs to be broken first, then the workpiece is turned over, and then the vacuum is re-evacuated to carry out atomic layer deposition on the other side, resulting in a complicated process. Moreover, there is a risk of contamination when breaking the vacuum, re-evacuating the vacuum or turning over the workpiece.

[0004] Therefore, how to solve the problems of complicated process and possible contamination in the conventional atomic layer deposition process during double-sided deposition is an urgent problem to be solved by those skilled in the art. Summary of the Utility Model

[0005] The main purpose of the utility model is to solve the problems of complicated process and possible contamination in the conventional atomic layer deposition process during double-sided deposition.

[0006] To achieve the above object, the present utility model discloses an atomic layer deposition process equipment, including a reaction chamber, an atomic layer deposition module, and a moving unit. The reaction chamber includes an upper part, a lower part, and a deposition chamber formed by the upper part and the lower part. The atomic layer deposition module includes an upper spray seat and a lower spray seat. The upper spray seat is disposed in the upper part and located in an upper space. The lower spray seat is disposed in the lower part and located in a lower space, and is spaced apart from the upper spray seat. A workpiece to be processed is clamped between the upper spray seat and the lower spray seat. The moving unit is connected to the atomic layer deposition module, and the moving unit drives the atomic layer deposition module to flip so that the atomic layer deposition module switches between a first deposition mode and a second deposition mode. Wherein, when the atomic layer deposition module is in the first deposition mode, the upper spray seat is located in the upper space and deposits on an upper surface of the workpiece to be processed. When the atomic layer deposition module switches to the second deposition mode, the moving unit drives the atomic layer deposition module and the workpiece to be processed to flip so that the lower spray seat moves to the upper space and deposits on a lower surface of the workpiece to be processed.

[0007] In one embodiment, the moving unit drives the atomic layer deposition module to rotate around a horizontal axis to switch from the first deposition mode to the second deposition mode.

[0008] In one embodiment, the upper spray seat includes a first diversion space for receiving a gas, a first spray head connected to the first diversion space, and a first heater disposed in the first diversion space. The first spray head extends along a plane in the deposition chamber to define a first bearing plane. The lower spray seat includes a second diversion space for receiving the gas, a second spray head connected to the second diversion space, and a second heater disposed in the second diversion space. The second spray head extends parallel to the plane in the deposition chamber to define a second bearing plane spaced apart from the first bearing plane. The lower spray seat is configured to be able to move towards the upper spray seat so that the workpiece between the first bearing plane and the second bearing plane is clamped by the first spray head and the second spray head.

[0009] In one embodiment, the first spray head includes a plurality of first spraying holes that communicate with the deposition chamber in the vertical direction and are distributed and arranged along the first bearing plane.

[0010] In one embodiment, the second spray head includes a plurality of second spraying holes that communicate with the deposition chamber in the vertical direction and are distributed and arranged along the second bearing plane.

[0011] In one embodiment, when the atomic layer deposition module is in the first deposition mode, the upper spray seat is connected to a gas supply source for supplying the gas.

[0012] In one embodiment, when the atomic layer deposition module is in the first deposition mode, the upper shower head is connected to a radio frequency power supply to excite the gas in the deposition chamber into a plasma.

[0013] In one embodiment, when the atomic layer deposition module is in the second deposition mode, the lower shower head is connected to a gas supply source for supplying the gas.

[0014] In one embodiment, when the atomic layer deposition module is in the second deposition mode, the lower shower head is connected to a radio frequency power supply to excite the gas in the deposition chamber into a plasma.

[0015] In one embodiment, a lifting unit is further included to drive the lower shower head to move vertically relative to the upper shower head. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 , which is a schematic diagram of an atomic layer deposition process equipment according to an embodiment of the present invention;

[0017] Figure 2 , which is a schematic diagram of an atomic layer deposition process equipment clamping a workpiece according to an embodiment of the present invention;

[0018] Figure 3 , which is a schematic diagram of the atomic layer deposition process equipment after being flipped according to an embodiment of the present invention.

[0019]

REFERENCE SIGNS

[0020] 1: Atomic layer deposition process equipment

[0021] 10: Reaction chamber

[0022] 11: Outer shell

[0023] 11a: Upper part

[0024] 11b: Lower part

[0025] 12: Deposition chamber

[0026] 12a: Upper space

[0027] 12b: Lower space

[0028] 20: Upper shower head

[0029] 21: First seat body

[0030] 22: First diversion space

[0031] 23: First shower head

[0032] 231: First spraying hole

[0033] 232: First bearing plane

[0034] 24: First heater

[0035] 30: Lower spray seat

[0036] 31: Second seat body

[0037] 32: Second diversion space

[0038] 33: Second spray head

[0039] 331: Second spraying hole

[0040] 332: Second bearing plane

[0041] 34: Second heater

[0042] 40: Moving unit

[0043] 50: Radio frequency power supply

[0044] 60: Lifting unit

[0045] 90: Workpiece

[0046] 91: First surface

[0047] 92: Second surface

[0048] X: Axial direction

[0049] G: Gas Detailed implementation manners

[0050] The terms used in this article are only for the purpose of describing specific embodiments and do not limit the present utility model. Unless otherwise specified in the context, the singular forms "a" and "the" used herein may also include the plural forms.

[0051] The directional terms used in this article, such as up, down, left, right, front, back and their derivatives or synonyms, refer to the orientation of the elements in the drawings and do not limit the present utility model, unless otherwise clearly stated in the context.

[0052] Refer to Figure 1, the present utility model discloses an atomic layer deposition process equipment 1 for performing atomic layer deposition on a workpiece (or substrate) 90. The present utility model particularly relates to a rotary atomic layer deposition process equipment, which uses a rotary design to achieve the flip deposition of the workpiece 90 and provide double-sided coating. Hereinafter, a plasma atomic layer deposition equipment is taken as an example, but the present utility model is not limited thereto. The atomic layer deposition process equipment 1 can also be a thermal atomic layer deposition equipment; and hereinafter, radio frequency plasma is taken as an example. In other examples, the atomic layer deposition process equipment 1 can also use microwave plasma, inductively coupled plasma or plasma from other sources.

[0053] The atomic layer deposition process equipment 1 includes a reaction chamber 10, an upper spray seat 20, a lower spray seat 30, a moving unit 40, a radio frequency power supply 50 and a lifting unit 60. In addition, the reaction chamber 10 can also be connected to devices such as a gas supply source, a precursor supply source and a vacuum unit. In this embodiment, the upper spray seat 20 and the lower spray seat 30 are regarded as an atomic layer deposition module.

[0054] It can be understood that when the atomic layer deposition process equipment 1 uses plasma from other sources, the radio frequency power supply 50 can be appropriately replaced or modified to other plasma sources. In addition, the reaction chamber 10 can also be connected to devices such as a gas supply source, a precursor supply source and a vacuum unit. In the present utility model, the plasma source, in addition to providing a plasma environment in the reaction chamber 10 during deposition, is also used for cleaning before the flip deposition of the workpiece 90.

[0055] The reaction chamber 10 includes a housing 11 and a deposition chamber 12, and the deposition chamber 12 is located inside the housing 11. The upper spray seat 20 and the lower spray seat 30 are located in the deposition chamber 12 and are spaced apart from each other. In this embodiment, the deposition chamber 12 is composed of an upper part 11a and a lower part 11b of the housing 11.

[0056] In the present utility model, the reaction chamber 10 (i.e., the housing 11) is rotatably arranged, and it can also be regarded as flipping the deposition chamber 12. In Figure 1 In, the upper spray seat 20 is arranged in the upper part 11a and is located in an upper space 12a of the deposition chamber 12, and the lower spray seat 30 is arranged in the lower part 11b and is located in a lower space 12b of the deposition chamber 12. For the purpose of illustration, the upper space 12a refers to the area located in the deposition chamber 12 and above both before and after rotation, and the lower space 12b refers to the area located in the deposition chamber 12 and below both before and after rotation.

[0057] The mobile unit 40 is disposed outside the reaction chamber 10 and connected to the reaction chamber 10, and can drive the atomic layer deposition module and the reaction chamber 10 to rotate about an axis X to switch from a first deposition mode to a second deposition mode. After flipping, the upper part 11a of the housing 11 and the upper spray seat 20 rotate to be located in the lower space 12b of the deposition chamber 12, and the lower part 11b of the housing 11 and the lower spray seat 30 rotate to be located in the upper space 12a of the deposition chamber 12. The upper space 12a and the lower space 12b are the relative positions of the deposition chamber 12 in space. Even if the deposition chamber 12 is upside down, the position relative to the upper half of the deposition chamber 12 is the upper space 12a, and the position relative to the lower half of the deposition chamber 12 is the lower space 12b.

[0058] Figure 1 Shown is the first deposition mode. In the first deposition mode, a first surface (or upper surface) 91 of the workpiece 90 faces upward and can be deposited with a thin film. The upper spray seat 20 includes a first seat body 21, a first flow guiding space 22, a first spray head 23, and a first heater 24. The first seat body 21 extends into the deposition chamber 12 along the vertical direction and defines the first flow guiding space 22. The first flow guiding space 22 is connected to the gas supply source to receive a gas G. The first spray head 23 is connected to the first seat body 21 along the vertical direction and is located in the deposition chamber 12 and arranged downward. The first flow guiding space 22 communicates with the deposition chamber 12 along the vertical direction through a plurality of first spraying holes 231 of the first spray head 23, so that the gas G can be dispersed into the deposition chamber 12 from the first spraying holes 231. The first spray head 23 extends along a plane in the deposition chamber 12 and defines a first bearing plane 232 for placing the workpiece 90. The first spraying holes 231 are distributed and arranged on the first bearing plane 232. The first heater 24 is disposed on the other side of the first bearing plane 232 and is located in the first flow guiding space 22.

[0059] The lower spray seat 30 includes a second seat body 31, a second diversion space 32, a second spray head 33, and a second heater 34. The second seat body 31 extends into the deposition chamber 12 in a vertical direction and defines the second diversion space 32. The second diversion space 32 is connected to the gas supply source to receive the gas G. The second spray head 33 is connected to the second seat body 31 in the vertical direction and is located in the deposition chamber 12 and is arranged upward. The second diversion space 32 communicates with the deposition chamber 12 in the vertical direction through a plurality of second spraying holes 331 of the second spray head 33, so that the gas G can be dispersed into the deposition chamber 12 from the second spraying holes 331. The second spray head 33 extends along a plane in the deposition chamber 12 and defines a second bearing plane 332. The second spraying holes 331 are distributed and arranged on the second bearing plane 332. The second bearing plane 332 is spaced from the first bearing plane 232. The second heater 34 is arranged on the other side of the second bearing plane 332 and is located in the second diversion space 32. In one example, the first heater 24 and the second heater 34 are respectively a heating lamp. In other examples, the heater can also be other heating devices, such as a resistive heater.

[0060] The radio frequency power supply 50 is connected to the upper spray seat 20 and the lower spray seat 30 and can excite the gas G in the deposition chamber 12 into plasma. In other examples, the radio frequency power supply 50 can be replaced by other types of plasma sources as long as the gas G in the deposition chamber 12 can be excited into plasma.

[0061] When the deposition of the first surface 91 of the workpiece 90 is completed, in order to deposit a second surface (or lower surface) 92 of the workpiece 90, the workpiece 90 can be flipped simultaneously while flipping, so that the second surface 92 of the workpiece 90 faces upward.

[0062] Refer to Figure 2 As shown, the lower spray seat 30 is configured to be movable towards the upper spray seat 20 so that the workpiece 90 between the first bearing plane 232 and the second bearing plane 332 is clamped by the first spray head 23 and the second spray head 33. In this embodiment, the lower spray seat 30 is coupled to the lifting unit 60, and the lifting unit 60 drives the lower spray seat 30 to move in the vertical direction to clamp the workpiece 90. In still other examples, it can be configured that the upper spray seat 20 can move towards the lower spray seat 30 so that the workpiece 90 between the first bearing plane 232 and the second bearing plane 332 is clamped by the first spray head 23 and the second spray head 33. After clamping, the reaction chamber 10 is flipped, and the upper spray seat 20, the lower spray seat 30, and the workpiece 90 can be flipped together.

[0063] The moving unit 40 can drive the atomic layer deposition module and the reaction chamber 10 to flip, so that the atomic layer deposition module and the reaction chamber 10 are in Figure 1 the first deposition mode (as Figure 1 shown) and Figure 3 switch between the second deposition modes. When the atomic layer deposition module and the reaction chamber 10 are driven by the moving unit 40 to rotate around the axis X, the upper spray seat 20 and the lower spray seat 30 are inverted in the vertical direction, that is, the upper spray seat 20 flips to the lower space 12b, and the lower spray seat 30 flips to the upper space 12a.

[0064] In the operation of an example, the process equipment 1 first performs the first deposition mode (as Figure 1 shown), the upper spray seat 20 is in the upper space 12a, and the lower spray seat 30 is in the lower space 12b. That is, the upper spray seat 20 is regarded as an upper device, and the lower spray seat 30 is regarded as a lower device. In the first deposition mode, the gas supply source and the radio frequency power supply 50 are coupled to the upper spray seat 20 (the upper device). The workpiece 90 is placed on the second spray head 33, the first surface 91 of the workpiece 90 faces the first spray head 23, the second surface 92 of the workpiece 90 contacts the second bearing plane 332 of the second spray head 33, and the gas supply source supplies the gas G to be sprayed from the first spray holes 231 of the first spray head 23 of the upper spray seat 20 (the upper device) into the deposition chamber 12. The gas G is excited into plasma by the radio frequency power supply 50, and the second heater 34 of the lower spray seat 30 (the lower device) can heat the second surface 92 of the workpiece 90 to perform an atomic layer deposition process on the first surface 91 of the workpiece 90.

[0065] After the deposition of the first surface 91 is completed, the lifting unit 60 drives the lower spray seat 30 to move towards the upper spray seat 20 so that the workpiece 90 is clamped by the first spray head 23 and the second spray head 33 (as Figure 2 shown), and the moving unit 40 drives the reaction chamber 10, the upper spray seat 20 and the lower spray seat 30 to rotate around the axis X to invert the upper spray seat 20 and the lower spray seat 30 in the vertical direction (the first deposition mode is switched to the second deposition mode), so that the upper spray seat 20 is the lower device and the lower spray seat 30 is the upper device (as Figure 3As shown. After flipping, the lower spray seat 30 moves away from the upper spray seat 20, so that the workpiece 90 is placed on the first bearing plane 232 of the first spray head 23. And the gas supply source and the radio frequency power supply 50 are coupled to the lower spray seat 30 (the upper device). The gas supply source supplies the gas G to be sprayed from the second spray holes 331 of the second spray head 33 into the deposition chamber 12. The gas G is excited into plasma by the radio frequency power supply 50. And the first heater 24 of the upper spray seat 20 (the lower device) heats the first surface 91 of the workpiece 90 to perform an atomic layer deposition process on the second surface 92 of the workpiece 90.

[0066] In summary, the upper spray seat and the lower spray seat of the present utility model are arranged facing each other and spaced apart in the reaction chamber. By first moving the lower spray seat to clamp the workpiece between the first spray head and the second spray head, and then rotating the reaction chamber, the upper spray seat and the lower spray seat along the axial direction parallel to the horizontal by the flipping device, so that the upper spray seat and the lower spray seat are inverted in the upper and lower positions. Thus, the atomic layer deposition can be performed on both the first surface and the second surface of the workpiece without breaking the vacuum of the reaction chamber, avoiding the problem of possible contamination caused by taking out and turning over the workpiece after breaking the vacuum, and also without having to make the deposition chamber in a vacuum state again, solving the problem of complicated processing procedures.

Claims

1. An atomic layer deposition process equipment, characterized in that: include: A reaction chamber, comprising an upper portion, a lower portion and a deposition chamber formed by the upper portion and the lower portion; An atomic layer deposition module, including: An upper spray seat is disposed on the upper portion and is located in an upper space; and A lower spray seat is disposed at the lower portion and is located in a lower space and is separated from the upper spray seat, and a workpiece is clamped between the upper spray seat and the lower spray seat; and a moving unit connected to the atomic layer deposition module and the reaction chamber, the moving unit driving the atomic layer deposition module and the reaction chamber to flip so that the atomic layer deposition module switches between a first deposition mode and a second deposition mode; Among them, when the atomic layer deposition module is in the first deposition mode, the upper spray seat is located in the upper space and deposits on an upper surface of the workpiece. When the atomic layer deposition module is switched to the second deposition mode, the moving unit drives the atomic layer deposition module and the workpiece to flip over and moves the lower spray seat to the upper space to deposit on a lower surface of the workpiece.

2. The atomic layer deposition process equipment according to claim 1, characterized in that: The moving unit drives the atomic layer deposition module to rotate around a horizontal axis to switch from the first deposition mode to the second deposition mode.

3. The atomic layer deposition process equipment according to claim 1, characterized in that: The upper spray seat includes a first flow guide space for receiving a gas, a first spray head connected to the first flow guide space, and a first heater arranged in the first flow guide space, wherein the first spray head extends along a plane in the deposition chamber to define a first bearing plane, and the lower spray seat includes a second flow guide space for receiving the gas, a second spray head connected to the second flow guide space, and a second heater arranged in the second flow guide space, wherein the second spray head extends parallel to the plane in the deposition chamber to define a second bearing plane separated from the first bearing plane, and the lower spray seat is configured to be able to move toward the upper spray seat so that the workpiece between the first bearing plane and the second bearing plane is clamped by the first spray head and the second spray head.

4. The atomic layer deposition process equipment according to claim 3, characterized in that: The first shower head includes a plurality of first spray holes connected to the deposition chamber in a vertical direction and distributed along the first bearing plane.

5. The atomic layer deposition process equipment according to claim 3, characterized in that: The second shower head includes a plurality of second spray holes connected to the deposition chamber along a vertical direction and distributed along the second bearing plane.

6. The atomic layer deposition process equipment according to claim 3, characterized in that: When the atomic layer deposition module is in the first deposition mode, the upper showerhead is connected to a gas supply source that supplies the gas.

7. The atomic layer deposition process equipment according to claim 3, characterized in that: When the atomic layer deposition module is in the first deposition mode, the upper showerhead is connected to a radio frequency power source for exciting the gas in the deposition chamber into a plasma.

8. The atomic layer deposition process equipment according to claim 3, characterized in that: When the atomic layer deposition module is in the second deposition mode, the lower showerhead is connected to a gas supply source that supplies the gas.

9. The atomic layer deposition process equipment according to claim 3, characterized in that: When the atomic layer deposition module is in the second deposition mode, the lower showerhead is connected to a radio frequency power source for exciting the gas in the deposition chamber into a plasma.

10. The atomic layer deposition process equipment according to claim 1, characterized in that: The utility model also comprises a lifting unit, which drives the lower spray seat to move vertically relative to the upper spray seat.

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