Fingerprint identification device and terminal

Abstract

The utility model discloses a fingerprint identification device and a terminal, which are applied to the technical field of fingerprint identification, the fingerprint identification device comprises an infrared laser and an infrared detector, the infrared laser and the infrared detector are both located on the back side of an OLED layer, and the back side is the side, back to a touch surface, of the OLED layer; the infrared laser is used for emitting infrared rays which are at least permeable to the OLED layer, and the infrared detector is used for receiving the infrared rays reflected back from the touch surface; and the infrared rays reflected back by the touch surface carry fingerprint information. The infrared laser and the infrared detector are arranged on the back side of the OLED layer, the infrared detector can emit infrared rays which are permeable to the OLED layer, then the infrared detector can receive the infrared rays carrying fingerprint information for fingerprint recognition, the fingerprint recognition function is achieved, and meanwhile the screen aging and burn-in phenomena of a finger pressing area are effectively avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of fingerprint recognition, in particular to a fingerprint recognition device and a terminal. Background Art

[0002] Optical fingerprint recognition technology can avoid the interference of ambient light and has good stability in complex environments, so it is adopted by many mobile phone manufacturers. The traditional optical fingerprint recognition technology is specifically based on visible light emitted by an OLED (Organic Light-Emitting Diode) screen irradiating the finger pressing area, and then the light reflected by the finger pressing area passes through the gaps between the OLED screen pixels and returns to the sensor placed under the OLED screen to achieve fingerprint recognition. This technology has some disadvantages. For example, when performing fingerprint recognition in a certain area for a long time, the OLED emits light too many times and for too long, which will accelerate the aging of the mobile phone screen in this area and even cause the phenomenon of screen burn-in.

[0003] Therefore, how to provide a method to avoid the phenomenon of accelerated screen aging in the finger pressing area where the OLED screen realizes the fingerprint recognition function is an urgent problem to be solved by those skilled in the art. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a fingerprint recognition device, which can avoid the phenomenon of accelerated screen aging in the finger pressing area where the OLED screen realizes the fingerprint recognition function; another purpose of the utility model is to provide a terminal, which can avoid the phenomenon of accelerated screen aging in the finger pressing area where the OLED screen realizes the fingerprint recognition function.

[0005] To solve the above technical problems, the utility model provides a fingerprint recognition device, including an infrared laser and an infrared detector. Both the infrared laser and the infrared detector are located on the back side of the OLED layer, and the back side is the side of the OLED layer facing away from the touch surface.

[0006] The infrared laser is used to emit infrared rays that are at least transmissive to the OLED layer, and the infrared detector is used to receive the infrared rays reflected back from the touch surface; the infrared rays reflected back from the touch surface carry fingerprint information.

[0007] Optionally, the light-emitting surface of the infrared laser is arranged facing the OLED layer, and the light-incident surface of the infrared detector is arranged facing the OLED layer.

[0008] Optionally, the wavelength range of the infrared rays emitted by the infrared laser is 1380nm - 1450nm; the wavelength range of the infrared rays received by the infrared detector is 1380nm - 1450nm.

[0009] Optionally, it further includes a structured optical element, which is located in the infrared light path where the infrared rays propagate towards the touch surface, and the structured optical element is used to expand the irradiation range of the infrared rays.

[0010] Optionally, the infrared laser and the infrared detector are grown on the same substrate.

[0011] Optionally, the substrate is an InP substrate, the substrate is fixed on the surface of the first substrate, the first substrate is located on the surface of the substrate facing the OLED layer, and the first substrate is transparent to the infrared rays.

[0012] Optionally, the light-emitting surface of the infrared laser is the surface of the substrate, and the electrode of the infrared laser is located on the surface of the infrared laser facing away from the OLED layer; the light-incident surface of the infrared detector is the surface of the substrate, and the electrode of the infrared detector is located on the surface of the infrared detector facing away from the OLED layer.

[0013] Optionally, the infrared laser is sequentially provided with an upper reflection layer, a first upper contact layer, a buried tunneling junction, a p-type waveguide layer, an active region, an n-type waveguide layer, a lower reflection layer, and the substrate from the side away from the OLED layer to the side facing the OLED layer;

[0014] A laser upper electrode is provided on the surface of the first upper contact layer facing away from the substrate, and a laser lower electrode is provided on the surface of the n-type waveguide layer facing away from the substrate.

[0015] Optionally, the laser lower electrode extends to the plane where the laser upper electrode is located through a ramp structure.

[0016] Optionally, the infrared detector is sequentially provided with a second upper contact layer, an absorption region, a lower contact layer, and the substrate from the side away from the OLED layer to the side facing the OLED layer;

[0017] A detector upper electrode is provided on the surface of the second upper contact layer facing away from the substrate, and a detector lower electrode is provided on the surface of the substrate facing away from the OLED layer.

[0018] Optionally, the detector lower electrode extends to the plane where the detector upper electrode is located through a ramp structure.

[0019] Optionally, a filling layer is provided on the surfaces of the infrared laser and the infrared detector.

[0020] Optionally, a second substrate is provided on the surface of the filling layer facing away from the first substrate.

[0021] The present application also provides a terminal, including the fingerprint recognition device as described in any one of the above.

[0022] A fingerprint recognition device provided by the present utility model includes an infrared laser and an infrared detector. Both the infrared laser and the infrared detector are located on the back side of the OLED layer, and the back side is the side of the OLED layer facing away from the touch surface; the infrared laser is used to emit infrared rays that are at least transmissive to the OLED layer, and the infrared detector is used to receive the infrared rays reflected back from the touch surface; the infrared rays reflected back through the touch surface carry fingerprint information.

[0023] By arranging the infrared laser and the infrared detector on the back side of the OLED layer, the infrared detector emits infrared rays that are transmissive to the OLED layer. Then, the infrared detector can receive the infrared rays carrying fingerprint information for fingerprint recognition to implement the fingerprint recognition function. Since the infrared rays are transmissive to the OLED layer, the entire fingerprint recognition device can be placed under the OLED layer. And since fingerprint recognition does not require the OLED layer to emit light, it can effectively avoid screen aging and burn-in phenomena in the finger pressing area. Also, since the infrared rays can directly penetrate the OLED layer and the light does not need to pass through the gaps between the pixels of the OLED screen, the infrared detector can receive more infrared rays, thus enabling more accurate fingerprint recognition.

[0024] The present application also provides a terminal, which also has the above beneficial effects and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0026] Figure 1 It is a schematic structural diagram of a fingerprint recognition device provided by an embodiment of the present utility model;

[0027] Figure 2 For Figure 1 the structural diagram of the infrared laser in

[0028] Figure 3 For Figure 1 the structural diagram of an infrared detector in

[0029] Figure 4 For Figure 1 the structural diagram of another infrared detector in

[0030] In the figure: 10. Touch surface; 20. Structured optical element; 30. First substrate; 40. Substrate; 50. Infrared laser; 60. Laser interface; 70. Infrared detector; 80. Detector interface; 90. Filling layer; 100. Second substrate;

[0031] 51. Upper reflective layer; 52. Upper laser electrode; 53. First upper contact layer; 54. Buried tunneling junction; 55. p-type waveguide layer; 56. Active region; 57. Lower laser electrode; 58. n-type waveguide layer; 59. Lower reflective layer;

[0032] 71. Upper detector electrode; 72. Second upper contact layer; 73. Absorption region; 74. Lower contact layer; 75. Lower detector electrode; 76. Ramp structure. Specific embodiments

[0033] The core of the present utility model is to provide a fingerprint recognition device. In the prior art, traditional optical fingerprint recognition technology is specifically based on visible light emitted by an OLED screen irradiating the finger pressing area, and then the light reflected by the finger pressing area passes through the gaps between the OLED screen pixels and returns to the sensor placed under the OLED screen to achieve fingerprint recognition. This technology has some drawbacks. For example, when performing fingerprint recognition in a certain area for a long time, the excessive number and long duration of OLED light emissions will accelerate the aging of the mobile phone screen in this area and even cause the phenomenon of screen burn-in.

[0034] A fingerprint recognition device provided by the present utility model includes an infrared laser and an infrared detector. Both the infrared laser and the infrared detector are located on the back side of the OLED layer, and the back side is the side of the OLED layer facing away from the touch surface; the infrared laser is used to emit infrared rays that are at least transmissive to the OLED layer, and the infrared detector is used to receive the infrared rays reflected back from the touch surface; the infrared rays reflected back through the touch surface carry fingerprint information.

[0035] By arranging the infrared laser and the infrared detector on the back side of the OLED layer, the infrared detector emits infrared rays that are transmissive to the OLED layer, and then the infrared detector can receive the infrared rays carrying fingerprint information for fingerprint recognition to achieve the fingerprint recognition function. Since the infrared rays are transmissive to the OLED layer, the entire fingerprint recognition device can be placed under the OLED layer, and since fingerprint recognition does not require the OLED layer to emit light, the aging and screen burn-in phenomena of the screen in the finger pressing area can be effectively avoided. And since the infrared rays can directly penetrate the OLED layer and the light does not need to pass through the gaps between the OLED screen pixels, the infrared detector can receive more infrared rays, so more accurate fingerprint recognition can be achieved.

[0036] To enable those skilled in the art to better understand the solution of the present utility model, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0037] Embodiment 1

[0038] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a fingerprint recognition device provided by an embodiment of the present utility model.

[0039] Referring to Figure 1 , in the embodiment of the present utility model, the fingerprint recognition device includes an infrared laser 50 and an infrared detector 70. Both the infrared laser 50 and the infrared detector 70 are located on the back side of the OLED layer, and the back side is the side of the OLED layer facing away from the touch surface 10. The infrared laser 50 is used to emit infrared rays that are at least transmissive to the OLED layer, and the infrared detector 70 is used to receive the infrared rays reflected back from the touch surface 10. The infrared rays reflected back through the touch surface 10 carry fingerprint information.

[0040] The above OLED layer is the main imaging component of the OLED screen, which is usually composed of multiple layers of films. The specific structure of the OLED layer can refer to the prior art and will not be elaborated here. The above infrared laser 50 is used to emit infrared rays, while the infrared detector 70 is used to receive infrared rays. In this embodiment, the infrared laser 50 is specifically used to emit infrared rays that are at least transmissive to the OLED layer. The wavelength range of the infrared rays needs to enable them to penetrate through each film layer of the OLED layer, so that the infrared rays can penetrate the OLED layer from the back side of the OLED layer and propagate to the touch surface 10 of the OLED layer. At the same time, it will be reflected by a human finger, and the infrared rays reflected by the human finger will carry the fingerprint information of the finger. The infrared rays carrying the fingerprint information will be reflected through the touch surface 10 and then penetrate the OLED layer again and propagate to the back side of the OLED layer, and be received by the infrared detector 70. Then, the fingerprint information carried therein can be identified according to the electrical signals generated by the infrared rays received by the infrared detector 70, realizing the fingerprint recognition function. The specific structures of the infrared laser 50 and the infrared detector 70 will be described in detail in the following embodiments and will not be elaborated here.

[0041] In this embodiment, a plurality of infrared detectors 70 arranged in an array are usually provided on the back side of the OLED layer to form an infrared detector array, so as to more fully obtain the reflected infrared rays based on the infrared detector array, thereby realizing more accurate fingerprint recognition. In this embodiment, the wavelength range of the infrared rays emitted by the above-mentioned infrared laser 50 is usually 1380nm - 1450nm to ensure that the infrared rays in this wavelength band can penetrate the OLED layer; correspondingly, the wavelength range of the infrared rays received by the infrared detector 70 is usually 1380nm - 1450nm to ensure that the infrared rays can be received.

[0042] In this embodiment, the light-emitting surface of the infrared laser 50 is usually arranged facing the OLED layer, and the light-incident surface of the infrared detector 70 is usually arranged facing the OLED layer. That is, the light emitted by the above-mentioned infrared laser 50 can directly penetrate the OLED layer without reflection and propagate towards the contact surface. Correspondingly, the above-mentioned infrared detector 70 can directly receive the infrared rays that are only reflected once by the contact surface instead of being reflected multiple times in the fingerprint recognition device, so as to ensure that the above-mentioned infrared rays have sufficient intensity, and further ensure the clarity of the final image.

[0043] Of course, in this embodiment, the light-emitting surface of the infrared laser 50 can be arranged facing away from the OLED layer. At this time, a reflector for reflecting infrared rays needs to be provided on the side of the infrared laser 50 facing away from the OLED layer to reflect the infrared rays emitted by the infrared laser 50 towards the OLED layer, so that the infrared rays can pass through the OLED layer and reach the contact surface. Correspondingly, the light-incident surface of the above-mentioned infrared detector 70 can also be arranged facing away from the OLED layer. At this time, a reflector for reflecting infrared rays needs to be provided on the side of the infrared detector 70 facing away from the OLED layer to reflect the infrared rays passing through the OLED layer towards the infrared detector 70, so that the infrared rays can enter the light-incident surface of the infrared detector 70. It should be noted that the light-emitting surface of the above-mentioned infrared laser 50 and the light-incident surface of the infrared detector 70 can be arranged in the same direction, for example, both facing the OLED layer, or in the opposite direction, that is, facing different directions. The specific structure can be set according to the actual situation and will not be specifically limited here.

[0044] Furthermore, in this embodiment, the fingerprint recognition device may further include a structured optical element 20. The structured optical element 20 is located in the infrared light path of the infrared rays propagating towards the touch surface 10, and the structured optical element 20 is used to expand the irradiation range of the infrared rays. The above-mentioned structured optical element 20 is mainly used to divide or shape the infrared light emitted by the infrared laser 50 to cover a larger field of view, that is, to expand the irradiation range of the infrared rays so that it can cover the touch area of a person's finger.

[0045] A fingerprint recognition device provided in this embodiment realizes the fingerprint recognition function by arranging an infrared laser 50 and an infrared detector 70 on the back side of the OLED layer. The infrared detector 70 emits infrared rays that are transmissive to the OLED layer, and then the infrared detector 70 can receive the infrared rays carrying fingerprint information for fingerprint recognition. Since the infrared rays are transmissive to the OLED layer, the entire fingerprint recognition device can be placed under the OLED layer. And since fingerprint recognition does not require the OLED layer to emit light, it can effectively avoid screen aging and burn-in phenomena in the finger-pressing area. Also, since the infrared rays can directly penetrate the OLED layer and the light does not need to pass through the gaps between the OLED screen pixels, the infrared detector 70 can receive more infrared rays, thus enabling more accurate fingerprint recognition.

[0046] The specific structure of a fingerprint recognition device provided in this embodiment will be introduced in detail in the following utility model embodiments.

[0047] Embodiment Two

[0048] Please refer to Figures 2 to 4 , Figure 2 For Figure 1 the structural schematic diagram of the mid-infrared laser; Figure 3 For Figure 1 the structural schematic diagram of an infrared detector; Figure 4 For Figure 1 the structural schematic diagram of another infrared detector.

[0049] Different from the above utility model embodiment, this utility model embodiment further defines the structures of the infrared laser 50 and the infrared detector 70 on the basis of the above utility model embodiment. The remaining content has been introduced in detail in the above utility model embodiment and will not be elaborated here.

[0050] Refer to Figure 1 , in this utility model embodiment, the infrared laser 50 and the infrared detector 70 are grown on the same substrate 40. That is, in this embodiment, the infrared laser 50 and the infrared detector 70 are integrated on the same substrate 40, specifically grown on the surface of the same substrate 40. This structure can effectively increase the integration degree of the infrared laser 50 and the infrared detector 70, which is beneficial to the miniaturization of the fingerprint recognition device.

[0051] In this embodiment, the substrate 40 is an InP substrate 40, and the substrate 40 is fixed on the surface of the first substrate 30. The first substrate 30 is located on the surface of the substrate 40 facing the OLED layer side, and the first substrate 30 is transmissive to infrared rays. That is, in this embodiment, an InP substrate 40 can be specifically used to grow an infrared laser 50 and an infrared detector 70, and the InP substrate 40 will be specifically fixed on the surface of the first substrate 30. First, the InP substrate 40 is transmissive to infrared rays, and the InP substrate 40 has less absorption of infrared light in the 1380nm - 1450nm band. In this embodiment, the first substrate 30 for fixing the substrate 40 is specifically located on the surface of the substrate 40 facing the OLED layer side. In order to enable infrared rays to propagate to the touch surface 10 of the OLED layer, the above-mentioned first substrate 30 needs to be transmissive to infrared rays to avoid blocking the infrared rays. The specific material of the first substrate 30 can be determined according to the actual situation as long as the above conditions are met, that is, it is transmissive to infrared in the 1380nm - 1450nm band and has a certain strength to support the substrate 40, and no specific limitation is made here.

[0052] Specifically, in this embodiment, the light-emitting surface of the infrared laser 50 is the surface of the substrate 40, and the electrodes of the infrared laser 50 are located on the surface of the infrared laser 50 facing away from the OLED layer side; the light-incident surface of the infrared detector 70 is the surface of the substrate 40, and the electrodes of the infrared detector 70 are located on the surface of the infrared detector 70 facing away from the OLED layer side.

[0053] That is, in order to enable the light emitted by the infrared laser 50 to directly pass through the OLED layer, the light-emitting surface of the infrared laser 50 can be set as the surface of its substrate 40. At this time, the infrared laser 50 is in a flip-chip structure and emits infrared rays directly from the side of its substrate 40 to the OLED layer. In the structure of the infrared laser 50, its electrodes are usually reflective to infrared rays and will affect the propagation of infrared rays. In this embodiment, the electrodes of the infrared laser 50 can be specifically set on the surface of the infrared laser 50 facing away from the OLED layer side to avoid interference of the electrodes with the propagation of infrared rays. The electrodes of the infrared laser 50 usually include a laser upper electrode 52 and a laser lower electrode 57. Correspondingly, in this embodiment, the light-incident surface of the infrared detector 70 can be set as the surface of the substrate 40. At this time, the infrared detector 70 is in a flip-chip structure and directly receives the reflected infrared rays from the side of its substrate 40. In the structure of the infrared detector 70, its electrodes are usually reflective to infrared rays and will affect the reception of infrared rays. The electrodes of the infrared detector 70 usually include a detector upper electrode 71 and a detector lower electrode 75. Therefore, in this embodiment, the electrodes of the infrared detector 70 can be specifically set on the surface of the infrared detector 70 facing away from the OLED layer side to avoid interference of the electrodes with the reception of infrared rays.

[0054] In this embodiment, a laser interface 60 may be provided on the side of the infrared laser 50 facing away from the OLED layer. The laser interface 60 can be used as an interface for electrically connecting each electrode in the infrared laser 50 to other components such as a power supply. On the side of the infrared detector 70 facing away from the OLED layer, a detector interface 80 may be provided. The detector interface 80 can be used as an interface for electrically connecting each electrode in the infrared detector 70 to other components such as a processor.

[0055] See Figure 2 , in this embodiment, the infrared laser 50 is sequentially provided with an upper reflection layer 51, a first upper contact layer 53, a buried tunneling junction 54, a p-type waveguide layer 55, an active region 56, an n-type waveguide layer 58, a lower reflection layer 59, and the substrate 40 from the side far from the OLED layer to the side facing the OLED layer. A laser upper electrode 52 is provided on the surface of the first upper contact layer 53 facing away from the substrate 40, and a laser lower electrode 57 is provided on the surface of the n-type waveguide layer 58 facing away from the substrate 40.

[0056] The upper reflection layer 51 may specifically be a film layer with a high reflectivity to infrared rays in the above wavelength band, or may be an upper Bragg reflector (DBR) layer. The upper Bragg reflector layer is specifically formed by alternately growing two different refractive index dielectric materials. Optional combinations of the two materials include: SiO 2 / TiO 2 , Al 2 O 3 / a-Si, CaF 2 / a-Si, MaF 2 / a-Si, CaF 2 / ZnS, AlF 3 / ZnS, where a-Si is amorphous silicon material. The upper Bragg reflector layer with the above components can achieve good reflection for infrared rays in the 1380nm - 1450nm wavelength band.

[0057] The laser upper electrode 52 may be one of Au / Zn / Pd metals. The first upper contact layer 53 may be a p-type doped InP film layer, and its doping concentration is usually in the range of 1×10 18 cm -3 -1×10 20 cm -3 . The buried tunneling junction 54 is used to confine the propagation path of the current, that is, to confine the flow range of the current. The buried tunneling junction 54 is usually highly doped InGaAs, and the side close to the first upper contact layer 53 is usually n-type highly doped, and the n-type doping concentration is usually 1×10 18 cm -3 -1×1020 cm -3 ; One side close to the p-type waveguide layer 55 is usually p-type highly doped, and the p-type doping concentration is usually 1×10 18 cm -3 -1×10 20 cm -3 。

[0058] The above-mentioned p-type waveguide layer 55 is usually p-type doped InP, and its doping concentration is usually 1×10 16 cm -3 -1×10 18 cm -3 ; The above-mentioned active region 56 can specifically be formed by stacking multiple periodic cycles of AlGaInAs / InP quantum wells in this embodiment. The number of periods is usually between 4 and 10, and the emission wavelength range of the active region 56 is usually 1380nm - 1450nm. The above-mentioned n-type waveguide layer 58 is usually n-type doped InP, and its doping concentration is usually 1×10 16 cm -3 -1×10 18 cm -3 。The above-mentioned laser lower electrode 57 can be one of Ge / Au / Ni / Au metals. The above-mentioned lower reflector 59 can specifically be a film layer with a high reflectivity to infrared rays in the above-mentioned band, or can also be a lower Bragg reflector (DBR) layer. The lower Bragg reflector layer is specifically two semiconductor materials directly epitaxially grown alternately on the InP substrate 40. The optional material combinations of the lower Bragg reflector layer include: InGaAsP / InP, AlGaInAs / InP, AlGaInAs / AlInAs, AlGaAsSb / AlAsSb. The above-mentioned substrate 40 is usually an n-type doped InP substrate 40, and its doping concentration is usually 1×10 16 cm -3 -1×10 18 cm -3 。

[0059] In this embodiment, the laser lower electrode 57 can extend to the plane where the laser upper electrode 52 is located through the ramp structure 76, so as to facilitate the setting of the laser interface 60.

[0060] See Figure 3 , in this embodiment, the infrared detector 70 is sequentially provided with a second upper contact layer 72, an absorption region 73, a lower contact layer 74, and the substrate 40 from the side far from the OLED layer to the side facing the OLED layer; a detector upper electrode 71 is provided on the surface of the second upper contact layer 72 facing away from the substrate 40, and a detector lower electrode 75 is provided on the surface of the substrate 40 facing away from the OLED layer.

[0061] The above infrared detector 70 can specifically be an InGaAs short-wave detector. The material of the upper electrode 71 on the detector can specifically be one of the metals Au / Zn / Pd. The second upper contact layer 72 is usually a p-type highly doped InP film layer, and its doping concentration is usually 1×10 18 cm -3 -1×10 20 cm -3 ; The above absorption region 73 can be intrinsic undoped InGaAs, and the lower contact layer 74 can be an n-type highly doped InP film layer, and its doping concentration can be 1×10 18 cm -3 -1×10 20 cm -3 。 The material of the lower electrode 75 of the above detector can be one of the metals Ge / Au / Ni / Au. The above substrate 40 can be an n-type doped InP substrate 40, and its doping concentration is usually 1×10 16 cm -3 -1×10 18 cm -3 。

[0062] See Figure 4 , in this embodiment, the lower electrode 75 of the detector can extend to the plane where the upper electrode 71 of the detector is located through the ramp structure 76, so as to facilitate the setting of the detector interface 80.

[0063] In this embodiment, a filling layer 90 can be provided on the surfaces of the infrared laser 50 and the infrared detector 70 to protect the specific structures of the infrared laser 50 and the infrared detector 70. In this embodiment, a second substrate 100 can be further provided on the surface of the filling layer 90 facing away from the first substrate 30, and the second substrate 100 is reflective to the infrared rays. The second substrate 100 can not only play a role in strengthening the fingerprint recognition device, but its reflectivity to infrared rays can reflect the dissipated infrared rays to the OLED layer, thereby increasing the utilization rate of infrared rays. Of course, in this embodiment, of course, the second substrate 100 can also not have reflectivity to infrared rays but have absorbency, so as to absorb the dissipated infrared rays and avoid the interference caused by the dissipated infrared rays to fingerprint detection. The specific material of the second substrate 100 can be set according to its different functions, and no specific limitation is made here.

[0064] A fingerprint recognition device provided in this embodiment integrates the infrared laser 50 and the infrared detector 70 on the same substrate 40, which can greatly reduce the size of the fingerprint recognition device, thereby facilitating the integration of the fingerprint recognition device with different terminals.

[0065] Embodiment Three

[0066] The following introduces a terminal provided by an embodiment of the present utility model. The terminal described below can be correspondingly referred to the fingerprint recognition device described above.

[0067] In this embodiment, the terminal includes a fingerprint recognition device provided by any of the above-mentioned embodiments of the utility model. The specific structure of the fingerprint recognition device has been described in detail in the above-mentioned embodiments of the utility model and will not be elaborated here. For the remaining structures of the terminal, such as the processor and other structures, reference can be made to the prior art and will not be elaborated here.

[0068] Since the terminal provided by this embodiment specifically uses the fingerprint recognition device provided by the above-mentioned embodiment, this terminal is more compact and can effectively avoid the screen aging and burn-in phenomenon in the finger pressing area.

[0069] In this specification, each embodiment is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. The same or similar parts among the embodiments can be referred to each other.

[0070] Finally, it should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0071] The above has introduced in detail a fingerprint recognition device and a terminal provided by the present utility model. Specific examples are used in this article to elaborate on the principle and implementation manner of the present utility model. The description of the above embodiments is only used to help understand the method and its core idea of the present utility model. It should be noted that for those of ordinary skill in the art in this technical field, without departing from the principle of the present utility model, several improvements and modifications can be made to the present utility model, and these improvements and modifications also fall within the protection scope of the claims of the present utility model.

Claims

1. A fingerprint recognition device, characterized in that: It comprises an infrared laser (50) and an infrared detector (70), wherein the infrared laser (50) and the infrared detector (70) are both located on the back side of the OLED layer, and the back side is the side of the OLED layer that is away from the touch surface (10); The infrared laser (50) is used to emit infrared rays that are at least transparent to the OLED layer, and the infrared detector (70) is used to receive the infrared rays reflected back from the touch surface (10); the infrared rays reflected back from the touch surface (10) carry fingerprint information.

2. The fingerprint recognition device according to claim 1, characterized in that: The light emitting surface of the infrared laser (50) is arranged toward the OLED layer, and the light incident surface of the infrared detector (70) is arranged toward the OLED layer.

3. The fingerprint recognition device according to claim 1, characterized in that: The infrared laser (50) emits infrared light with a wavelength range of 1380nm-1450nm; the infrared detector (70) receives infrared light with a wavelength range of 1380nm-1450nm.

4. The fingerprint recognition device according to claim 1, characterized in that: It also comprises a structural optical element (20), wherein the structural optical element (20) is located in the infrared light path of the infrared ray propagating toward the touch surface (10), and the structural optical element (20) is used to expand the irradiation range of the infrared ray.

5. The fingerprint recognition device according to any one of claims 1 to 4, characterized in that: The infrared laser (50) and the infrared detector (70) are grown on the same substrate (40).

6. The fingerprint recognition device according to claim 5, characterized in that: The substrate (40) is an InP substrate (40), the substrate (40) is fixed to the surface of a first substrate (30), the first substrate (30) is located on the surface of the substrate (40) facing the OLED layer, and the first substrate (30) is transparent to the infrared rays.

7. The fingerprint recognition device according to claim 6, characterized in that: The light emitting surface of the infrared laser (50) is the surface of the substrate (40), and the electrode of the infrared laser (50) is located on the surface of the infrared laser (50) on the side facing away from the OLED layer; the light incident surface of the infrared detector (70) is the surface of the substrate (40), and the electrode of the infrared detector (70) is located on the surface of the infrared detector (70) on the side facing away from the OLED layer.

8. The fingerprint recognition device according to claim 7, characterized in that: The infrared laser (50) is provided with an upper reflection layer (51), a first upper contact layer (53), a buried tunnel junction (54), a p-type waveguide layer (55), an active region (56), an n-type waveguide layer (58), a lower reflection layer (59), and the substrate (40) in sequence from a side away from the OLED layer to a side facing the OLED layer; A laser upper electrode (52) is provided on the surface of the first upper contact layer (53) facing away from the substrate (40), and a laser lower electrode (57) is provided on the surface of the n-type waveguide layer (58) facing away from the substrate (40).

9. The fingerprint recognition device according to claim 8, characterized in that: The laser lower electrode (57) extends to the plane where the laser upper electrode (52) is located through a climbing structure (76).

10. The fingerprint recognition device according to claim 7, characterized in that: The infrared detector (70) is provided with a second upper contact layer (72), an absorption region (73), a lower contact layer (74), and the substrate (40) in sequence from a side away from the OLED layer to a side facing the OLED layer; A detector upper electrode (71) is provided on the surface of the second upper contact layer (72) on the side facing away from the substrate (40), and a detector lower electrode (75) is provided on the surface of the substrate (40) on the side facing away from the OLED layer.

11. The fingerprint recognition device according to claim 10, characterized in that: The detector lower electrode (75) extends to the plane where the detector upper electrode (71) is located through a climbing structure (76).

12. The fingerprint recognition device according to claim 6, characterized in that: Filling layers (90) are provided on the surfaces of the infrared laser (50) and the infrared detector (70).

13. The fingerprint recognition device according to claim 12, characterized in that: A second substrate (100) is disposed on a surface of the filling layer (90) that is opposite to the first substrate (30).

14. A terminal, characterized in that: It comprises a fingerprint recognition device as claimed in any one of claims 1 to 13.

Images