Chemical vapor deposition device
By installing electrodes in the reaction chamber of the chemical vapor deposition device, and directly heating the conductive first growth substrate is solved, the problems of low production efficiency, uneven heating and low graphene quality of the existing device are solved, and efficient and uniform graphene preparation is achieved.
Patent Information
- Application Number
- CN202422131449.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-30
- Publication Date
- 2025-06-06
- Estimated Expiration
- 2034-08-30
AI Technical Summary
The existing chemical vapor deposition devices have problems such as low production efficiency, uneven heating and low graphene quality during the graphene preparation process.
A chemical vapor deposition device is designed to directly heat the conductive first growth substrate by providing electrodes in the reaction chamber by utilizing the characteristic of converting electrical energy into thermal energy, increasing the temperature increase rate, and enabling selective contact between the electrode and the growth substrate through moving components.
It improves preparation efficiency, reduces energy waste and gas phase pollution, and improves the quality and heating uniformity of graphene.
Smart Images
Figure CN222948468U_ABST
Abstract
Description
Technical Field
[0001] The utility model generally relates to the technical field of chemical vapor deposition, and in particular to a chemical vapor deposition device. Background Art
[0002] Graphene is a material with excellent physical and chemical properties. Graphene is prepared by chemical vapor deposition. The thickness of graphene is adjustable and it can grow uniformly with high quality, which is conducive to the large-scale application of graphene. Among them, common chemical vapor deposition devices specifically include hot wall CVD devices and cold wall CVD devices.
[0003] The hot wall CVD device includes a quartz tube and a tubular furnace. The melting point of the quartz tube limits the graphene limit temperature, making the graphene limit temperature less than 1100°C, and the tubular furnace limits the heating rate of the quartz tube to no more than 20°C / min, resulting in low production efficiency. At the same time, the heat transfer method of the existing device is from the furnace to the sample. The temperature of the entire growth environment is relatively high, and the carbon source will be cracked in large quantities in the gas phase. The by-products generated by further reactions will also be adsorbed on the sample, reducing the quality of graphene.
[0004] The cold wall CVD device includes an electromagnetic induction coil and a graphite disk. The coil is wound around the outer periphery of the quartz tube and generates a magnetic field. The graphite disk generates heat under the action of the magnetic field to heat the growth substrate. This heating method is indirect heating, and there must be interface thermal resistance, resulting in low heating efficiency and uneven heating, which affects the preparation efficiency and preparation quality. Utility Model Content
[0005] The utility model provides a chemical vapor deposition device to improve production quality.
[0006] According to a first aspect of the utility model, a chemical vapor deposition device is provided, comprising:
[0007] A reaction chamber, the reaction chamber is used to accommodate a first growth substrate, the first growth substrate is a conductor;
[0008] The first heating component comprises an electrode, the electrode is arranged in the reaction chamber and is used to electrically connect to the first growth substrate so that the first growth substrate self-heats to a preset chemical vapor deposition temperature.
[0009] In some embodiments, it also includes:
[0010] A first moving component is capable of driving the electrode to move toward or away from the first growth substrate, so that the electrode is in selective contact with the first growth substrate.
[0011] In some embodiments, it also includes:
[0012] The second moving component can drive the first growth substrate to move relative to the reaction chamber and in a direction close to or away from the electrode, so that the first growth substrate is selectively arranged corresponding to the electrode.
[0013] In some embodiments, it also includes:
[0014] A supporting plate is arranged in the reaction chamber and corresponds to the electrode. The supporting plate is used to support the first growth substrate. The supporting plate and the electrode can respectively abut against two sides of the first growth substrate along the radial direction of the reaction chamber.
[0015] In some embodiments, the number of the electrodes is multiple, and the multiple electrodes are respectively arranged at two ends of the first growth substrate along the axial direction of the reaction chamber;
[0016] And / or, there are multiple electrodes, and the multiple electrodes are respectively arranged on both sides of the first growth substrate along the radial direction of the reaction chamber.
[0017] In some embodiments, the first heating component further comprises:
[0018] A first power source is electrically connected to the electrode, and heats the first growth substrate after the electrode is energized.
[0019] In some embodiments, it also includes:
[0020] A second heating component is arranged in the reaction chamber, and is located between the air inlet of the reaction chamber and the first heating component. The second growth substrate is configured to be selectively arranged corresponding to the second heating component. The second heating component is used to heat the second growth substrate to a first preset temperature so that a conductive film is grown on the surface of the second growth substrate to obtain the first growth substrate.
[0021] In some embodiments, the second heating component comprises:
[0022] The tubular furnace is located outside the reaction chamber and is arranged around the outer peripheral wall of the reaction chamber.
[0023] In some embodiments, the second heating component comprises:
[0024] a second power source, disposed outside the reaction chamber;
[0025] a coil, wound around the outer wall of the reaction chamber, the coil being electrically connected to the second power supply and used for generating a magnetic field in the reaction chamber after being energized;
[0026] A graphite disk is arranged in the reaction chamber and corresponds to the coil. The graphite disk is used to carry the second growth substrate and generate heat in the magnetic field.
[0027] In some embodiments, the second heating component comprises:
[0028] a second power source, disposed outside the reaction chamber;
[0029] A graphite disk is arranged in the reaction chamber and corresponds to the coil. The graphite disk is used to carry the second growth substrate. The graphite disk is electrically connected to the second power supply and is used to generate heat on the graphite disk after power is turned on.
[0030] The utility model has the following advantages or beneficial effects:
[0031] The chemical vapor deposition device provided by the utility model, by arranging electrodes in the reaction chamber, based on the characteristic of converting electrical energy into thermal energy, can directly heat the first growth substrate with conductive ability after the electrodes are energized, effectively increase the heating rate, and improve the preparation efficiency; at the same time, this heating method makes only the surface temperature of the first growth substrate high, while the outer wall temperature of the reaction chamber is relatively low, so that the reaction chamber has a higher growth temperature gradient, which can reduce the energy waste and gas phase pollution caused by gas phase heating, and effectively improve the heating uniformity and the quality of graphene.
[0032] Compared with conventional chemical vapor deposition devices, only electrodes are added without changing other designs of the furnace body of the traditional CVD device. The process is simple and the modification cost is low. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] In order to better understand the utility model, reference may be made to the embodiments shown in the following drawings. The components in the drawings are not necessarily to scale, and related elements may be omitted in order to emphasize and clearly illustrate the technical features of the utility model. In addition, related elements or components may have different settings as known in the art. In addition, in the drawings, the same reference numerals represent the same or similar components in each of the drawings. By describing its example embodiments in detail with reference to the drawings, the above and other features and advantages of the utility model will become more apparent.
[0034] in:
[0035] Figure 1 The schematic diagram of the principle of the chemical vapor deposition device of the first embodiment of the utility model is shown;
[0036] Figure 2 The structure of the chemical vapor deposition device of the first embodiment of the utility model is shown. Figure 1 ;
[0037] Figure 3 The structure of the chemical vapor deposition device of the first embodiment of the utility model is shown. Figure 2 ;
[0038] Figure 4 The structure of the chemical vapor deposition device of the second embodiment of the utility model is shown. Figure 1 ;
[0039] Figure 5 The structure of the chemical vapor deposition device of the second embodiment of the utility model is shown. Figure 2 ;
[0040] Figure 6 The structure of the chemical vapor deposition device of the third embodiment of the utility model is shown. Figure 1 ;
[0041] Figure 7 The structure of the chemical vapor deposition device of the third embodiment of the utility model is shown. Figure 2 ;
[0042] The reference numerals are described as follows:
[0043] 100, a first growth substrate; 200, a second growth substrate;
[0044] 1. Reaction chamber; 2. First heating component; 3. First moving component; 4. Second moving component; 5. Carrying plate; 6. Second heating component; 7. Vacuuming component; 8. Gas supply component;
[0045] 21. electrode; 22. first power source;
[0046] 31. Connecting frame; 32. First driving rod;
[0047] 41. second driving rod; 42. unwinding driving source; 43. winding driving source;
[0048] 61. Tube furnace; 62. Second power supply; 63. Coil; 64. Graphite disk;
[0049] 81. First air supply pipeline; 82. Second air supply pipeline; 83. Third air supply pipeline; 84. Flow detection component; 85. Control valve; 86. Connecting pipeline. DETAILED DESCRIPTION
[0050] The following will be combined with the drawings in the example embodiments of the utility model to clearly and completely describe the technical solutions in the example embodiments of the utility model. The example embodiments described herein are only for illustrative purposes and are not intended to limit the scope of protection of the utility model. Therefore, it should be understood that various modifications and changes can be made to the example embodiments without departing from the scope of protection of the utility model.
[0051] In the description of the present invention, unless otherwise clearly specified and limited, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance; the term "plurality" refers to two or more; the term "and / or" includes any and all combinations of one or more associated listed items. In particular, reference to "the / the" object or "an" object is also intended to indicate one of a possible plurality of such objects.
[0052] Unless otherwise specified or explained, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, an integral connection, an electrical connection, or a signal connection; "connection" can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.
[0053] Further, in the description of the present invention, it should be understood that the directional words such as "upper", "lower", "inner", "outer" and the like described in the exemplary embodiments of the present invention are described at the angles shown in the accompanying drawings and should not be understood as limitations on the exemplary embodiments of the present invention. It should also be understood that, in the context, when it is mentioned that an element or feature is connected to another element (one or more) "upper", "lower", or "inner", "outer", it can not only be directly connected to the other (one or more) elements "upper", "lower", or "inner", "outer", but can also be indirectly connected to the other (one or more) elements "upper", "lower", "inner", "outer" through an intermediate element.
[0054] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.
[0055] Embodiment 1
[0056] During the growth of graphene on a catalytically inactive substrate, the growth temperature is one of the key factors affecting the cracking of the carbon source and the nucleation of graphene. Higher temperatures can effectively promote the cracking of the carbon source and the migration rate of active species on the surface, further promoting the nucleation, splicing and growth of graphene. However, the growth temperature of the existing CVD reaction device using electromagnetic induction heating or tubular furnace heating is limited, resulting in the inability to obtain high-quality graphene.
[0057] This embodiment provides a chemical vapor deposition device suitable for conductive materials. Figure 1 As shown, the chemical vapor deposition apparatus comprises a reaction chamber 1 and a first heating assembly 2. The reaction chamber 1 is used to accommodate a first growth substrate 100, which is a conductor. The first heating assembly 2 comprises an electrode 21, which is disposed in the reaction chamber 1 and is used to electrically connect the first growth substrate 100 so that the first growth substrate 100 is self-heated to a preset chemical vapor deposition temperature.
[0058] Among them, the chemical vapor deposition device also includes a quartz tube, which is made of quartz material and is easy to process. The quartz tube is a hollow structure, and the hollow cavity of the quartz tube is the reaction chamber 1. It can be understood that the axial direction of the reaction chamber 1 is defined as the first direction, the first direction is marked with D1, the radial direction of the reaction chamber 1 is defined as the second direction, the second direction is marked with D2, and the third direction is marked with D3. The first direction, the second direction and the third direction are perpendicular to each other, and the first direction, the second direction and the third direction only represent the spatial direction and have no substantive meaning.
[0059] The air inlet of the reaction chamber 1 is used to introduce carbon source, protective gas and other gases, and the air outlet of the reaction chamber 1 is used to discharge the waste gas generated after the reaction. Specifically, the air inlet and the air outlet are respectively arranged at both ends of the reaction chamber 1 along the axial direction of the reaction chamber 1, that is, air is taken in from one end of the reaction chamber 1 and exhausted from the other end, so that the production process is continuous and uninterrupted, and the production efficiency is high.
[0060] It is understandable that the first growth substrate 100 can be made of metal material, so that the first growth substrate 100 itself has a certain conductivity for electrical connection with the electrode 21. The first growth substrate 100 can also be an insulator or semiconductor that has no conductivity itself and a conductive film covering its surface, such as glass fiber, alumina fiber, silicon carbide fiber, basalt fiber and its fiber braid and graphene covering its surface, so that the first growth substrate 100 has a certain conductivity for electrical connection with the electrode 21.
[0061] According to the principle of resistance heating, since the first growth substrate 100 itself is a conductor, when current passes through the electrode 21, the first growth substrate 100 generates heat by itself after being energized.
[0062] The chemical vapor deposition device provided in this embodiment, by arranging an electrode 21 in the reaction chamber 1, based on the characteristic of the electrode 21 of converting electrical energy into thermal energy, can directly heat the first growth substrate 100 with conductive ability after the electrode 21 is energized, and the heating rate is fast, and only the surface temperature of the first growth substrate 100 is high, while the outer wall temperature of the reaction chamber 1 is relatively low, so that the reaction chamber 1 has a higher growth temperature gradient. For example, the deposition temperature of graphene can reach 1100°C to 3000°C, and the heating rate can reach 1300°C / s, which effectively improves the preparation efficiency, reduces the energy waste and gas phase pollution caused by gas phase heating, and effectively improves the heating uniformity and the quality of graphene.
[0063] Compared with conventional chemical vapor deposition devices, only the electrode 21 is added without changing other designs of the furnace body of the conventional CVD device, so the process is simple and the modification cost is low.
[0064] In one embodiment, Figure 1 As shown, the first heating assembly 2 also includes a first power source 22, which is electrically connected to the electrode 21, so that the electrode 21 is powered on to heat the first growth substrate 100. The first power source 22 provides the electrode 21 with the required electrical energy, and based on the characteristic of converting electrical energy into thermal energy, the electrode 21 is heated.
[0065] It can be understood that the number of electrodes 21 is multiple, and the multiple electrodes 21 are respectively arranged at the two ends of the first growth substrate 100 along the axial direction of the reaction chamber 1. For example, the number of electrodes 21 is two, and the two electrodes 21 are respectively arranged at the two ends of the first growth substrate 100 along the axial direction of the reaction chamber 1, and the two electrodes 21 are respectively connected to the positive electrode and the negative electrode of the first power supply 22 through the signal line, and the two electrodes 21 are specifically a positive electrode and a negative electrode, so that the first power supply 22, the two electrodes 21 and the part of the first growth substrate 100 located between the two electrodes 21 form a conductive loop to heat the first growth substrate 100.
[0066] In one embodiment, the gas inlet of the reaction chamber 1 is used to communicate with a gas source, and the gas source can provide reaction gases including argon, hydrogen, carbon source, etc. to the reaction chamber 1. Exemplarily, the axis of the gas inlet is parallel to the axis of the reaction chamber 1 and parallel to the surface of one side of the first growth substrate 100. When the gas source provides the reaction gas to the inside of the reaction chamber 1, the gas flow direction of the reaction gas is parallel to the surface of the first growth substrate 100, which increases the contact area with the reaction gas and helps to obtain higher quality graphene.
[0067] In one embodiment, Figure 1As shown, the chemical vapor deposition apparatus further includes a gas supply assembly 8, which includes a first gas supply pipeline 81, a second gas supply pipeline 82, and a third gas supply pipeline 83. The first gas supply pipeline 81 is used to transport a carbon source, the second gas supply pipeline 82 is used to transport an auxiliary gas, such as hydrogen, and the third gas supply pipeline 83 is used to transport a carrier gas, such as an inert gas such as argon. The first gas supply pipeline 81, the second gas supply pipeline 82, and the third gas supply pipeline 83 can be directly connected to the gas inlet, or connected to the gas inlet through a connecting pipeline 86.
[0068] The gas supply pipeline also includes a flow detection component 84, which is specifically a flow detection meter. The flow detection component 84 can be set in at least one of the first gas supply pipeline 81, the second gas supply pipeline 82 and the third gas supply pipeline 83, and is used to detect the gas flow in each gas supply pipeline.
[0069] The gas supply pipeline also includes a control valve 85 , which is disposed on the connecting pipeline 86 and is used to control the opening and closing of the connecting pipeline 86 .
[0070] In one embodiment, the gas outlet of the reaction chamber 1 is connected to two parallel branches. One branch is for directly discharging the gas in the reaction chamber 1 through a ball valve. When the branch is connected, the reaction chamber 1 is in a normal pressure deposition process. The other branch is for connecting the ball valve to the vacuum pumping component 7. When the branch is connected, the reaction chamber 1 is in a low pressure deposition process. Specifically, the vacuum pumping component 7 includes a vacuum pump, which can be connected to the gas outlet of the reaction chamber 1 through a bellows.
[0071] In one embodiment, if Figure 1-Figure 2 As shown, the chemical vapor deposition device further includes a first moving component 3 , which can drive the electrode 21 to move toward or away from the first growth substrate 100 , so that the electrode 21 selectively contacts the first growth substrate 100 .
[0072] The first moving component 3 is used to realize the movement of the electrode 21. When the electrode 21 contacts the first growth substrate 100, the first power supply 22, the electrode 21 and the first growth substrate 100 form a power-on circuit, and the electrode 21 can heat the first growth substrate 100. When the electrode 21 is not in contact with the first growth substrate 100, the electrode 21 is detached from the first growth substrate 100 and cannot form a power-on circuit, so the electrode 21 cannot heat the first growth substrate 100.
[0073] Specifically, the first moving component 3 includes a connecting frame 31 and a first driving rod 32. The output end of the first driving rod 32 is connected to the connecting frame 31. The first driving rod 32 can drive the connecting frame 31 to move in the reaction chamber 1 along the second direction. The connecting frame 31 is connected to the multiple electrodes 21, and the connecting frame 31 drives the multiple electrodes 21 to move synchronously.
[0074] It is understandable that the power source of the first driving rod 32 can be pneumatic drive, hydraulic drive, motor drive, etc.
[0075] In one embodiment, the chemical vapor deposition device also includes a supporting plate 5, which is arranged in the reaction chamber 1 and corresponds to the electrode 21. The supporting plate 5 is used to support the first growth substrate 100. The supporting plate 5 and the electrode 21 can respectively abut against both sides of the first growth substrate 100 along the radial direction of the reaction chamber 1.
[0076] When the electrode 21 is not in contact with the first growth substrate 100, the first growth substrate 100 is only in contact with the supporting plate 5, and the supporting plate 5 provides a certain supporting force for the first growth substrate 100; when the electrode 21 is pressed down and contacts the first growth substrate 100 under the driving action of the first moving component 3, the supporting plate 5 and the electrode 21 can respectively abut against the two side surfaces of the first growth substrate 100, and the supporting plate 5 and the electrode 21 play the role of clamping the first growth substrate 100, and while realizing that the electrode 21 heats the first growth substrate 100, it also realizes the clamping and fixation of the first growth substrate 100.
[0077] The carrier plate 5 can be made of graphite or other materials, and the carrier plate 5 can be an integral structure. The size of the carrier plate 5 is relatively large, and the carrier plate 5 can support the portion of the first growth substrate 100 between the two electrodes 21, and the supporting effect is good. The carrier plate 5 can also be a split structure, and the sizes of the two carrier plates 5 are relatively small. The two carrier plates 5 and the two electrodes 21 are correspondingly arranged, and only the portion where the electrode 21 contacts the first growth substrate 100 provides support force, saving the cost of original materials.
[0078] In one embodiment, Figure 1-Figure 2 As shown, the chemical vapor deposition device further includes a second moving component 4 , which can drive the first growth substrate 100 to move relative to the reaction chamber 1 and toward or away from the electrode 21 , so that the first growth substrate 100 is selectively disposed corresponding to the electrode 21 .
[0079] That is, the second moving component 4 is used to drive the first growth substrate 100 to move along the axial direction of the reaction chamber 1 to enter and exit the reaction chamber 1. Specifically, before the reaction starts, the second moving component 4 drives the first growth substrate 100 to enter the reaction chamber 1 and move to the heating area corresponding to the electrode 21 for heating reaction. After the conductive film (such as graphene) is deposited on the first growth substrate 100, the second moving component 4 drives the first growth substrate 100 covered with the conductive film to move outside the reaction chamber 1. The operator takes out the carrier plate 5 and the first growth substrate 100 with the conductive film grown thereon through the discharge port. The second moving component 4 plays the role of conveying and loading and unloading the first growth substrate 100. At the same time, the second moving component 4 can also realize the alignment between the first growth substrate 100 and the electrode 21, and play the role of position adjustment to ensure heating efficiency.
[0080] It can be understood that the second movable component 4 drives the first growth substrate 100 to move along the first direction, and the first movable component 3 drives the electrode 21 to move along the second direction. The moving directions of the first movable component 3 and the second movable component 4 are perpendicular, and the moving ranges of the two will not interfere with each other, and they have good independence.
[0081] For example, Figure 2 As shown, the second moving assembly 4 includes a second driving rod 41, the output end of the second driving rod 41 is connected to the bearing plate 5, and the second driving rod 41 pulls the first growth substrate 100 to move through the bearing plate 5. Alternatively, the output end of the second driving rod 41 is detachably connected to the first growth substrate 100, and the second driving rod 41 directly pulls the first growth substrate 100 to move.
[0082] It is understandable that the power source of the second driving rod 41 can be pneumatic drive, hydraulic drive, motor drive, etc.
[0083] For example, Figure 3 As shown, the second moving component 4 may also include an unwinding drive source 42 and a winding drive source 43. The unwinding drive source 42 and the winding drive source 43 are arranged outside the reaction chamber 1 and are located at both ends of the reaction chamber 1 along the first direction. The length of the first growth substrate 100 along the first direction is relatively long. The first growth substrate 100 is wound around the unwinding drive source 42 and the winding drive source 43. The unwinding drive source 42 and the winding drive source 43 have the same rotation direction. The unwinding drive source 42 is used for unwinding the first growth substrate 100, and the winding drive source 43 is used for winding the first growth substrate 100, so that the feeding and discharging processes of the first growth substrate 100 are continuous, and the production efficiency is high.
[0084] In one embodiment, there are multiple electrodes 21 , and the multiple electrodes 21 are respectively disposed on both sides of the first growth substrate 100 along the radial direction of the reaction chamber 1 .
[0085] It can be understood that by adopting this roll-to-roll method to drive the first growth substrate 100 to move, the unwinding drive source 42 and the winding drive source 43 can provide a certain supporting force for the first growth substrate 100, so there is no need to set up a supporting plate 5, and multiple electrodes 21 are respectively set on both sides of the first growth substrate 100 along the radial direction of the reaction chamber 1, so that the two side surfaces of the first growth substrate 100 along the second direction can be heated by the electrode 21, thereby increasing the heating range of the electrode 21 and improving production efficiency.
[0086] This embodiment also provides a chemical vapor deposition method, comprising the following steps:
[0087] Placing the first growth substrate 100 in the reaction chamber 1;
[0088] The first growth substrate 100 is electrically connected via the electrode 21 , and power is applied to allow the first growth substrate 100 to self-heat to a preset chemical vapor deposition temperature, so that a conductive film is deposited and grown on the surface of the first growth substrate 100 .
[0089] The first growth substrate 100 can be made of metal material, so that the first growth substrate 100 itself has a certain conductivity, which is used to be electrically connected to the electrode 21. The first growth substrate 100 can also be an insulator or semiconductor that has no conductivity itself and a conductive film covering its surface, so that the first growth substrate 100 has a certain conductivity, which is convenient for electrical connection with the electrode 21. For example, the first growth substrate 100 can be a glass fiber fabric with a thin layer of graphene coated on the surface, as a conductive material substrate.
[0090] The control method of the chemical vapor deposition device provided in this embodiment includes the following steps:
[0091] S10, providing a first growth substrate 100 and placing it into a reaction chamber 1;
[0092] S11, evacuating the reaction chamber 1 by using the vacuum pumping assembly 7;
[0093] S12, controlling the first moving component 3 to drive the electrode 21 to press downward along the second direction, so that the electrode 21 is in contact with the first growth substrate 100;
[0094] S13, after setting the required power-on voltage, the electrode 21 is powered on to heat the first growth substrate 100 to a preset chemical vapor deposition temperature, and a reaction gas is introduced through the gas inlet to deposit a conductive film on the surface of the first growth substrate 100.
[0095] Embodiment 2
[0096] This embodiment is similar to the first embodiment, and the difference lies in the specific heating method of the chemical vapor deposition device.
[0097] like Figure 4-Figure 5 As shown, the chemical vapor deposition device provided in this embodiment also includes a second heating component 6, which is arranged in the reaction chamber 1. The second heating component 6 is located between the air inlet of the reaction chamber 1 and the first heating component 2. The second growth substrate 200 is configured to be selectively arranged corresponding to the second heating component 6. The second heating component 6 is used to heat the second growth substrate 200 to a first preset temperature so that the surface of the second growth substrate 200 grows a conductive film to obtain the first growth substrate 100.
[0098] Specifically, along the conveying direction of the first growth substrate 100, the second heating component 6 is located upstream of the first heating component 2, the first heating component 2 and the second heating component 6 are arranged along the first direction, and the second heating component 6 is disposed at one end of the reaction chamber 1 close to the air inlet, that is, before using the electrode 21 for heating, the second heating component 6 is first used to heat the second growth substrate 200.
[0099] In this way, the second growth substrate 200 can initially be made of a material that has no conductivity, for example, glass fiber fabric. After it is placed in the reaction chamber 1 and a carbon source is introduced, graphene is deposited on the surface of the second growth substrate 200, so that the surface of the second growth substrate 200 is covered with graphene, and a thin layer of graphene glass fiber fabric is obtained, that is, the first growth substrate 100. At this time, the first growth substrate 100 has a certain conductivity, which is convenient for electrical connection with the electrode 21 for heating.
[0100] It can be understood that, by using the second moving component 4, the second growth substrate 200 can be moved from the second heating component 6 to the heating area corresponding to the electrode 21 of the first heating component 2, so that the second growth substrate 200 can undergo two heating processes.
[0101] Specifically, the second heating component 6 is used to heat the second growth substrate 200 to a first preset temperature, so that a conductive film is deposited on the surface of the second growth substrate 200 to obtain the first growth substrate 100. The first heating component 2 is used to heat the first growth substrate 100 with a conductive film coated on the surface to a preset chemical vapor deposition temperature; wherein the preset chemical vapor deposition temperature is greater than or equal to the first preset temperature.
[0102] Illustratively, since the heating temperature of the first heating component 2 is relatively high, the carbon source is cracked near the graphene film covering the surface of the first growth substrate 100, thereby depositing graphene on the first growth substrate 100, further growing the graphene, and increasing the thickness of the graphene layer, thereby obtaining the first growth substrate 100 having a thick layer of graphene film.
[0103] Exemplarily, the second heating assembly 6 includes a tubular furnace 61, which is located outside the reaction chamber 1 and is arranged around the outer peripheral wall of the reaction chamber 1. The reaction chamber 1 is heated to the first preset temperature by hot wall CVD heating, which has a simple process and a relatively low production cost.
[0104] This embodiment also provides a chemical vapor deposition method, comprising the following steps:
[0105] Placing the second growth substrate 200 in the reaction chamber 1;
[0106] The second growth substrate 200 is heated to a first preset temperature by a second heating assembly 6, so that a conductive film is deposited and grown on the surface of the second growth substrate 200, thereby obtaining a first growth substrate 100;
[0107] Move the first growth substrate 100 with the conductive film coated on the surface to the position corresponding to the electrode 21 of the first heating component 2;
[0108] The first growth substrate 100 is electrically connected via the electrode 21 , and power is applied to allow the first growth substrate 100 to self-heat to a preset chemical vapor deposition temperature, so that a conductive film is deposited and grown on the surface of the first growth substrate 100 .
[0109] Exemplarily, in this manner, the second growth substrate 200 may initially be made of a material that does not have electrical conductivity, such as glass fiber fabric. Under the heating action of the second heating component 6, a thin layer of graphene film grows on the surface of the glass fiber fabric to obtain the first growth substrate 100, so that the first growth substrate 100 has a certain electrical conductivity, which is convenient for electrical connection with the electrode 21 for heating. At the same time, since the glass fiber fabric is heated twice by the second heating component 6 and the first heating component 2 in sequence, the thickness of the graphene deposited on the glass fiber fabric is relatively thick, thereby obtaining a glass fiber fabric with a thick layer of graphene film.
[0110] The control method of the chemical vapor deposition device provided in this embodiment includes the following steps:
[0111] S20, providing a second growth substrate 200 and placing it into the reaction chamber 1;
[0112] S21, evacuating the reaction chamber 1 by using the vacuum pumping assembly 7;
[0113] S22, using the tube furnace 61 to heat the reaction chamber 1 to a first preset temperature, and introducing a reaction gas through the gas inlet to deposit a conductive film on the surface of the second growth substrate 200, thereby obtaining a first growth substrate 100 having a thin conductive film;
[0114] S23, using the second moving assembly 4, pulling the first growth substrate 100 from the position corresponding to the tube furnace 61 to the position of the electrode 21 of the first heating assembly 2;
[0115] S24, controlling the first moving component 3 to drive the electrode 21 to press downward along the second direction, so that the electrode 21 contacts the first growth substrate 100;
[0116] S25, after setting the required power-on voltage, the electrode 21 is powered on and the first growth substrate 100 is heated to a preset chemical vapor deposition temperature, so that a conductive film is further deposited on the surface of the first growth substrate 100 covered with a thin layer of conductive film to obtain a thick layer of conductive film.
[0117] Embodiment 3
[0118] This embodiment is similar to the second embodiment, and the only difference is that the specific structure of the second heating component 6 is different.
[0119] like Figure 6 As shown, the second heating component 6 provided in this embodiment includes a second power supply 62 and a graphite disk 64. The second power supply 62 is arranged outside the reaction chamber 1, and the graphite disk 64 is arranged in the reaction chamber 1 and corresponds to the coil 63. The graphite disk 64 is used to carry the second growth substrate 200. The graphite disk 64 is electrically connected to the second power supply 62 and is used to generate heat on the graphite disk 64 after power is turned on.
[0120] Since the graphite disk 64 can generate heat when powered on, after the graphite disk 64 is heated, the graphite disk 64 can transfer the heat to the second growth substrate 200, thereby achieving preliminary heating of the second growth substrate 200. In this way, the graphite disk 64 is heated while the tube wall of the reaction chamber 1 is not heated, thereby increasing the heating rate and cooling rate inside the reaction chamber 1, shortening the growth reaction time of graphene, and improving the growth efficiency.
[0121] In another embodiment, Figure 7 As shown, the second heating component 6 includes a second power supply 62, a coil 63 and a graphite disk 64. The second power supply 62 is arranged outside the reaction chamber 1; the coil 63 is wound around the outer peripheral wall of the reaction chamber 1, and the coil 63 is electrically connected to the second power supply 62, and is used to generate a magnetic field in the reaction chamber 1 after power is turned on; the graphite disk 64 is arranged in the reaction chamber 1 and corresponds to the coil 63, and the graphite disk 64 is used to carry the second growth substrate 200 and generate heat in the magnetic field.
[0122] Since the coil 63 is spirally wound around the periphery of the reaction chamber 1, when the coil 63 is energized, the coil 63 is equivalent to an energized solenoid, and a magnetic field can be generated in the reaction chamber 1 according to the magnetic effect of the current. According to the magnetocaloric effect, the graphite disk 64 can generate heat under the action of the magnetic field, and then the second growth substrate 200 on the graphite disk 64 is heated by heat conduction, so that the heating temperature reaches the first preset temperature. Therefore, in the chemical vapor deposition device of the embodiment of the present application, the coil 63 only heats the graphite disk 64, and the second growth substrate 200 on the graphite disk 64 is heated by heat conduction. The graphite disk 64 has a high temperature tolerance and can achieve a heating temperature of up to 1700°C.
[0123] The control method of the chemical vapor deposition device provided in this embodiment includes the following steps:
[0124] S30, providing a second growth substrate 200 and placing it into the reaction chamber 1;
[0125] S31, evacuating the reaction chamber 1 by using the vacuum pumping assembly 7;
[0126] S32, introducing a carbon source through the air inlet, the second power source 62 directly heats the graphite disk 64, or the coil 63 is energized to heat the graphite disk 64, so that the graphite disk 64 is heated to a first preset temperature, so as to deposit a conductive film on the surface of the second growth substrate 200, and obtain a first growth substrate 100 having a thin layer of conductive film;
[0127] S33, using the second moving assembly 4, pulling the first growth substrate 100 from the position corresponding to the tube furnace 61 or the coil 63 to the position of the electrode 21 of the first heating assembly 2;
[0128] S34, controlling the first moving component 3 to drive the electrode 21 to press downward along the second direction, so that the electrode 21 is in contact with the first growth substrate 100;
[0129] S35, after setting the required power-on voltage, the electrode 21 is powered on and the first growth substrate 100 is heated to a preset chemical vapor deposition temperature to further deposit a conductive film on the surface of the first growth substrate 100 covered with the thin conductive film to obtain a thick conductive film.
[0130] It should be noted that the embodiments of the present invention are shown in the drawings and described in this specification is only an example of the principle of the present invention. It should be clearly understood by those skilled in the art that the principle of the present invention is not limited to any details or any components of the device shown in the drawings or described in the specification.
[0131] It should be understood that the utility model does not limit its application to the detailed structure and arrangement of the components proposed in this specification. The utility model can have other embodiments and can be implemented and executed in a variety of ways. The aforementioned deformation forms and modified forms fall within the scope of the utility model. It should be understood that the utility model disclosed and defined in this specification extends to all alternative combinations of two or more individual features mentioned or evident in the text and / or the drawings. All these different combinations constitute multiple alternative aspects of the utility model. The embodiments described in this specification illustrate the best known methods for implementing the utility model and will enable those skilled in the art to utilize the utility model.
[0132] Those skilled in the art will readily come up with other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. The present invention is intended to cover any variation, use, or adaptation of the present invention, which follows the general principles of the present invention and includes common knowledge or customary technical means in the art that are not disclosed in the present invention. The specification and example embodiments are to be considered as exemplary only, and the true scope and spirit of the present invention are indicated by the appended claims.
[0133] It should be understood that the present invention is not limited to the precise structure described above and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of protection of the present invention is limited only by the appended claims.
Claims
1. A chemical vapor deposition device, characterized in that: include: A reaction chamber, the reaction chamber is used to accommodate a first growth substrate, the first growth substrate is a conductor; The first heating component comprises an electrode, the electrode is arranged in the reaction chamber and is used to electrically connect to the first growth substrate so that the first growth substrate self-heats to a preset chemical vapor deposition temperature.
2. The chemical vapor deposition device according to claim 1, characterized in that: Also includes: A first moving component is capable of driving the electrode to move toward or away from the first growth substrate, so that the electrode is in selective contact with the first growth substrate.
3. The chemical vapor deposition device according to claim 1, characterized in that: Also includes: The second moving component can drive the first growth substrate to move relative to the reaction chamber and in a direction close to or away from the electrode, so that the first growth substrate is selectively arranged corresponding to the electrode.
4. The chemical vapor deposition device according to claim 1, characterized in that: Also includes: A supporting plate is arranged in the reaction chamber and corresponds to the electrode. The supporting plate is used to support the first growth substrate. The supporting plate and the electrode can respectively abut against two sides of the first growth substrate along the radial direction of the reaction chamber.
5. The chemical vapor deposition device according to claim 1, characterized in that: The number of the electrodes is multiple, and the multiple electrodes are respectively arranged at two ends of the first growth substrate along the axial direction of the reaction chamber; And / or, there are multiple electrodes, and the multiple electrodes are respectively arranged on both sides of the first growth substrate along the radial direction of the reaction chamber.
6. The chemical vapor deposition device according to claim 1, characterized in that: The first heating component also includes: A first power source is electrically connected to the electrode, and heats the first growth substrate after the electrode is energized.
7. The chemical vapor deposition device according to any one of claims 1 to 6, characterized in that: Also includes: A second heating component is arranged in the reaction chamber, and is located between the air inlet of the reaction chamber and the first heating component. The second growth substrate is configured to be selectively arranged corresponding to the second heating component. The second heating component is used to heat the second growth substrate to a first preset temperature so that a conductive film is grown on the surface of the second growth substrate to obtain the first growth substrate.
8. The chemical vapor deposition device according to claim 7, characterized in that: The second heating assembly comprises: The tubular furnace is located outside the reaction chamber and is arranged around the outer peripheral wall of the reaction chamber.
9. The chemical vapor deposition device according to claim 7, characterized in that: The second heating assembly comprises: a second power source, disposed outside the reaction chamber; a coil, wound around the outer wall of the reaction chamber, the coil being electrically connected to the second power supply and used for generating a magnetic field in the reaction chamber after being energized; A graphite disk is arranged in the reaction chamber and corresponds to the coil. The graphite disk is used to carry the second growth substrate and generate heat in the magnetic field.
10. The chemical vapor deposition device according to claim 7, characterized in that: The second heating assembly comprises: a second power source, disposed outside the reaction chamber; A graphite disk is arranged in the reaction chamber and corresponds to the coil. The graphite disk is used to carry the second growth substrate. The graphite disk is electrically connected to the second power supply and is used to generate heat on the graphite disk after power is turned on.