Electroplating and deplating integrated equipment for HJT crystalline silicon cell

Abstract

The utility model belongs to the technical field of solar module coating, and relates to an HJT crystalline silicon cell electroplating and deplating integrated device which comprises a coating pool, two groups of conductive brushes located in the coating pool and an electroplating anode plate horizontally arranged between the two groups of conductive brushes, and the conveying surfaces of the two groups of conductive brushes are equal in height and are used for horizontally conveying a plate to be plated. The electroplating anode plate is horizontal in position and faces the to-be-plated plate, and a deplating cathode is arranged on one side of the conductive brush; and a sensor for detecting whether the to-be-plated plate is in contact with the conductive brush is also arranged in the coating pool, when the to-be-plated plate is in contact with the conductive brush, the conductive brush is connected with the cathode, otherwise, the conductive brush is connected with the anode. According to the equipment, when the to-be-plated plate is in contact with the conductive brush, the surface of the to-be-plated plate is plated with a copper film, and when the to-be-plated plate is not in contact with the conductive brush, copper deposited on the surface of the conductive brush during electroplating is dissolved again, so that copper is effectively deposited on the to-be-plated plate, and the situation that the contact toughness of the conductive brush and the to-be-plated plate is affected due to copper deposition is avoided; and the continuous stability of the equipment process is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of solar module coating, in particular to an integrated device for HJT crystalline silicon cell electroplating and stripping. Background Art

[0002] HJT (heterojunction) crystalline silicon cells are a new type of solar cell, which is mainly composed of two layers of silicon material, one layer is P-type silicon and the other is N-type silicon. During the manufacturing process, the cell needs to be electroplated. Electroplating is the process of depositing a metal material (mainly copper) onto the surface of another material by electrolysis. In the manufacturing process of HJT crystalline silicon cells, electroplating is mainly used to deposit a layer of metal film on the surface of the cell to improve the conductivity of the cell.

[0003] Chinese patent CN217298052U discloses a crystalline silicon solar cell electroplating device, in which the anode roller is partially immersed in the electroplating solution, and a cathode module is arranged directly above the electroplating tank. The cathode module includes an adjustment component and a conductive brush detachably connected to the adjustment component. The cell passes through the gap between the anode roller and the conductive brush, and the conductive brush is perpendicular to and in contact with the surface of the cell. The adjustment component is used to adjust the interference of the conductive brush on the surface of the cell. Here, the conductive brush is connected to the cathode, so that the surface of the cell is negatively charged, and the anode roller will apply the electroplating solution to the lower surface of the cell in contact with it, so that metal can be plated on the cell due to oxidation reaction. However, in this way, the cell is not immersed in the electroplating solution, the electricity is difficult to flow, and the coating quality is poor. If the cell is immersed in the electroplating solution, the surface of the conductive brush may also gradually reduce its toughness due to the thickening of the coating, resulting in the risk of scratching the surface of the cell.

[0004] Therefore, it is necessary to develop a new coating equipment to solve the above problems. Summary of the invention

[0005] The main purpose of the utility model is to provide an integrated HJT crystalline silicon cell electroplating and stripping equipment, which can not only ensure the effective deposition of copper on the plate to be plated, but also avoid the conductive brush affecting the toughness of the contact with the plate to be plated due to the deposition of copper, thereby improving the continuous stability of the equipment process.

[0006] The utility model achieves the above-mentioned purpose through the following technical scheme: an integrated HJT crystalline silicon cell electroplating and stripping equipment, comprising a coating pool for containing electroplating solution, two groups of conductive brushes located in the coating pool, and a plating anode plate horizontally arranged between the two groups of conductive brushes, the conveying surfaces of the two groups of conductive brushes are at the same height and are used to horizontally convey the plates to be plated, the electroplating anode plate is horizontally positioned and faces the plates to be plated, and a stripping cathode is provided on one side of the conductive brush; a sensor is also provided in the coating pool for detecting whether the plates to be plated are in contact with the conductive brush, and when the plates to be plated are in contact with the conductive brush, the conductive brush connects the cathode, otherwise it connects the anode.

[0007] Specifically, the stripping cathode is located above the upper conductive brush and below the lower conductive brush.

[0008] Furthermore, the electroplating anode plates are in two pieces and are respectively arranged on the upper and lower sides of the conveying surface.

[0009] Furthermore, insulating partitions are respectively provided on both sides of the electroplating anode plate, and the insulating partitions separate the electroplating anode plate from the stripping cathodes on both sides.

[0010] Specifically, the electroplating anode plate is made of an insoluble conductive material.

[0011] The beneficial effects of the technical solution of the utility model are:

[0012] When the plate to be plated contacts the conductive brush, this equipment will coat the surface of the plate with a copper film. When the plate to be plated does not contact the conductive brush, the copper deposited on the surface of the conductive brush during electroplating will be dissolved again. This will ensure effective copper deposition on the plate to be plated and prevent the conductive brush from affecting its toughness in contact with the plate due to copper deposition, thereby improving the continuous stability of the equipment process. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a working principle diagram of the integrated electroplating and stripping equipment for HJT crystalline silicon cells in the embodiment when electroplating a plate to be plated;

[0014] Figure 2 This is a working principle diagram of the integrated electroplating and stripping equipment for HJT crystalline silicon cells during stripping with a conductive brush.

[0015] The numbers in the figure represent:

[0016] 1-HJT crystalline silicon battery electroplating and stripping integrated equipment, 11-coating tank, 12-conductive brush, 13-electroplating anode plate, 14-stripping cathode, 15-insulating partition, 16-sensor;

[0017] 2-plate to be plated;

[0018] 3- Plating solution. DETAILED DESCRIPTION

[0019] The utility model is further described in detail below in conjunction with specific embodiments.

[0020] Example:

[0021] like Figure 1 As shown, an integrated HJT crystalline silicon cell electroplating and stripping equipment 1 of the utility model comprises a coating pool 11 for electroplating solution 3, two groups of conductive brushes 12 located in the coating pool 11, and a plating anode plate 13 horizontally arranged between the two groups of conductive brushes 12, the conveying surfaces of the two groups of conductive brushes 12 are at the same height and are used to horizontally convey the to-be-plated board 2, the electroplating anode plate 13 is horizontally positioned and faces the to-be-plated board 2, and a stripping cathode 14 is provided on one side of the conductive brush 12; a sensor 16 for detecting whether the to-be-plated board 2 is in contact with the conductive brush 12 is also provided in the coating pool 11, when the to-be-plated board 2 is in contact with the conductive brush 12, the conductive brush 12 connects the cathode, otherwise it connects the anode.

[0022] When the coating operation is performed, the plate 2 to be plated will be transported forward under the action of the conductive brush 12. The plate 2 to be plated and the conductive brush 12 must be in contact, so the two are in a conductive connection state, and then detected by the sensor 16. At this time, the conductive brush 12 is connected to the cathode, and the plate 2 to be plated gathers negative electricity because it contacts the conductive roller, and the electroplating anode plate 13 gathers positive electricity. The plate 2 to be plated and the electroplating anode plate 13 are in a parallel relationship, so a relatively uniform electric field will be formed in the space between the two. When the coating pool 11 is filled with the electroplating solution 3, the plate 2 to be plated and the conductive brush 12 are both immersed in the electroplating solution 3, and the current flows through the migration of ions. The coating metal here is copper, so the copper ions will be reduced on the surface of the plate 2 to be plated and the conductive brush 12 to form a copper plating layer. The wire diameter of the conductive brush 12 will be thickened due to the deposition of copper, thereby affecting its toughness;

[0023] When the plate 2 to be plated leaves the conductive brush 12, the new state will be detected by the sensor 16. The conductive brush 12 collects positive electricity through the anode, and the stripping cathode 14 collects negative electricity. The copper on the surface of the conductive brush 12 will dissolve and oxidize into ions, enter the electroplating solution 3, and then be reduced to single copper on the stripping cathode 14. This prevents the conductive brush 12 from affecting the toughness of contact with the plate 2 due to copper deposition.

[0024] When the plate 2 to be plated contacts the conductive brush 12, the device plates the surface of the plate 2 with a copper film. When the plate 2 to be plated does not contact the conductive brush 12, the copper deposited on the surface of the conductive brush 12 during electroplating is dissolved again. This ensures that copper is effectively deposited on the plate 2 to be plated, while preventing the conductive brush 12 from affecting its toughness in contact with the plate 2 due to the deposited copper, thereby improving the continuous stability of the equipment process.

[0025] like Figure 1 As shown, the stripping cathode 14 is located above the upper conductive brush 12 and below the lower conductive brush 12 .

[0026] The stripping cathode 14 is located relatively far away from the plate 2 to be plated, so that the electric field distribution can be more reasonable.

[0027] like Figure 1 As shown, there are two electroplating anode plates 13 which are respectively arranged on the upper and lower sides of the conveying surface.

[0028] If there is only one electroplating anode plate 13, only one side can be electroplated at a time; when there are two electroplating anode plates 13, the upper surface or the lower surface can be electroplated at one time, or even both surfaces can be electroplated at the same time. Electroplating is more flexible and even more efficient.

[0029] like Figure 1 As shown, insulating partitions 15 are respectively provided on both sides of the electroplating anode plate 13, and the insulating partitions 15 separate the electroplating anode plate 13 from the conductive brushes on both sides.

[0030] When the stripping cathode 14 is located above or below the conductive brush 12, it is located closer to the electroplating anode plate 13. Because the movement of electricity is carried out by the electroplating solution 3, in order to avoid the electrochemical reaction caused by the potential difference between the stripping cathode 14 and the electroplating anode plate 13 not occurring on the plate 2 to be plated, the insulating partition 15 intercepts the electroplating solution 3 from flowing directly between the two at the shortest distance, so that the electrochemical reaction of electroplating must be completed with the participation of the plate 2 to be plated.

[0031] The electroplating anode plate 13 is made of an insoluble conductive material.

[0032] If the electroplating anode plate 13 is made of active metal, the metal ions of the active metal will be released and lost during the electroplating process, which will not only affect the service life but also easily pollute the product. Therefore, it is necessary to use an insoluble conductive material.

[0033] The above are only some embodiments of the present invention. For those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. An integrated electroplating and stripping equipment for HJT crystalline silicon cells, characterized in that: The invention comprises a coating pool for containing a plating solution, two groups of conductive brushes in the coating pool and a plating anode plate horizontally arranged between the two groups of conductive brushes. The conveying surfaces of the two groups of conductive brushes are at the same height and are used to convey the plates to be plated horizontally. The plating anode plate is horizontally positioned and faces the plates to be plated. A deplating cathode is arranged on one side of the conductive brush. A sensor is also arranged in the coating pool for detecting whether the plates to be plated are in contact with the conductive brush. When the plates to be plated are in contact with the conductive brush, the conductive brush connects to the cathode, otherwise, it connects to the anode.

2. The HJT crystalline silicon cell electroplating and stripping integrated equipment according to claim 1, characterized in that: The stripping cathode is located above the upper conductive roller and below the lower conductive roller.

3. The HJT crystalline silicon cell electroplating and stripping integrated equipment according to claim 1 or 2, characterized in that: The stripping cathode is located above the upper conductive brush and below the lower conductive brush.

4. The HJT crystalline silicon cell electroplating and stripping integrated equipment according to claim 3, characterized in that: Insulating partitions are respectively arranged on both sides of the electroplating anode plate, and the insulating partitions separate the electroplating anode plate from the stripping cathodes on both sides.

5. The HJT crystalline silicon cell electroplating and stripping integrated equipment according to claim 1, characterized in that: The electroplating anode plate is made of insoluble conductive material.

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