Solar cell, photovoltaic module, power utilization device and power generation device

Abstract

The utility model relates to a solar cell, a photovoltaic module, a power utilization device and a power generation device. The solar cell comprises a substrate, a photovoltaic structure, a confluence structure and a packaging layer, wherein the photovoltaic structure comprises a first electrode layer, a light absorption layer and a second electrode layer which are sequentially stacked on the substrate; the confluence structure comprises a confluence piece, a first insulating layer and a second insulating layer, a first main body part of the confluence piece is connected with the second electrode layer, the first insulating layer wraps the outer surface of a second main body part of the confluence piece and is located on the substrate, the photovoltaic structure is divided into two subareas by the first insulating layer, and the two subareas are located on the two sides of the first insulating layer respectively; the two partitions are connected in parallel through the first main body part, and the second insulating layer wraps the built-in section of the leading-out end; the packaging layer is provided with a leading-out hole, and the built-in section, wrapped by the second insulating layer, of the leading-out end is located in the leading-out hole. The projection of the lead-out hole on the substrate is located in the projection of the first insulating layer on the substrate. Therefore, the photoelectric property stability of the solar cell is improved.

Description

Technical Field

[0001] The present application relates to the field of battery technology, and in particular to a solar cell, a photovoltaic module, an electrical device and a power generation device. Background Art

[0002] The statements herein merely provide background information related to the present application and do not necessarily constitute prior art.

[0003] Solar cells are a new type of photovoltaic device that uses the photovoltaic effect to directly convert solar radiation energy into electrical energy. Taking perovskite solar cells as an example, they use perovskite materials as light-absorbing layers, have the advantages of low cost, high weak light effect, and a wide range of application scenarios. They are an excellent choice for the new generation of mass-produced photovoltaic cells and can alleviate the energy crisis. After the solar cell converts solar radiation energy into photocurrent, a bus structure is required to connect to the external circuit to collect the photocurrent and output the photovoltage to obtain electrical energy; at the same time, an encapsulation layer is also provided to encapsulate the battery device. Current solar cells have the problem of low stability of the device's photoelectric performance. Therefore, traditional technology needs to be improved. Utility Model Content

[0004] In order to achieve the above-mentioned objectives, the present application provides a solar cell, a photovoltaic module, an electrical device and a power generation device capable of improving the stability of photoelectric performance.

[0005] The present application is implemented through the following technical solutions.

[0006] In a first aspect of the present application, a solar cell is provided, comprising:

[0007] substrate;

[0008] A photovoltaic structure, the photovoltaic structure comprising a first electrode layer, a light absorbing layer, and a second electrode layer stacked in sequence on the substrate;

[0009] A bus structure, wherein the photovoltaic structure and the bus structure are located on the same side of the substrate, the bus structure comprises a bus, a first insulating layer and a second insulating layer, the bus comprises a first main body, a second main body and a lead-out terminal connected in sequence, the first main body is connected to the second electrode layer, the first insulating layer is wrapped around the outer surface of the second main body and is located on the substrate, the first insulating layer divides the photovoltaic structure into two partitions, the two partitions are respectively located on both sides of the first insulating layer, the two partitions are connected through the first main body, the lead-out terminal comprises a connected built-in segment and an external segment, and the second insulating layer is wrapped around the built-in segment of the lead-out terminal; and

[0010] An encapsulation layer, wherein the encapsulation layer and the substrate cooperate to form a encapsulation structure, the photovoltaic structure is located within the encapsulation structure, a lead-out hole is provided on the encapsulation layer, the built-in section of the lead-out end is located in the lead-out hole, and the external section of the lead-out end is located outside the encapsulation layer; the projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is located within the projection of the first insulating layer on the substrate along the thickness direction of the photovoltaic structure.

[0011] The above solar cell removes the photovoltaic structure below the position of the lead-out hole, that is, the photovoltaic structure is not set at the position of the lead-out hole, the first insulating layer is directly set on the substrate at the position of the lead-out hole, and the second main body of the busbar is wrapped in the first insulating layer, and the lead-out end wrapped with the second insulating layer is also set in the lead-out hole, thereby increasing the water vapor blocking path of the first insulating layer and the second insulating layer, which can effectively block the contact between the photovoltaic structure functional layer and water vapor, thereby improving the water vapor blocking performance of the first insulating layer and the second insulating layer. Moreover, since the first insulating layer is directly set on the substrate, the damage to the photovoltaic structure functional layer caused by the first insulating layer being set on the photovoltaic structure is avoided, and the stress stability of the solar cell is improved. At the same time, since the photovoltaic structure is not set below the first insulating layer, it is also avoided that the photovoltaic structure is set here for a long time to generate heat and cause the insulation layer to age, which has an adverse effect on the stability of the first insulating layer. In addition, the lead-out hole is located near the middle of the encapsulation layer, which is convenient for the stability of the lead-out hole punching process. Therefore, the solar cell improves the structural stability of the solar cell through structural improvement, coordinated effects in terms of water blocking performance, stress stability and heat management, and thus improves the stability of the photoelectric performance of the solar cell.

[0012] In some embodiments, the two partitions are connected in series or in parallel through the first main body. Thus, the output voltage of the solar cell can be increased by connecting the two partitions in series through the first main body, or the output current of the solar cell can be increased by connecting the two partitions in parallel through the first main body.

[0013] In some embodiments, the projection area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is smaller than the projection area of ​​the first insulating layer on the substrate along the thickness direction of the photovoltaic structure, thereby further increasing the water vapor blocking path of the first insulating layer.

[0014] In some embodiments, in a transverse plane perpendicular to the thickness direction of the photovoltaic structure, the shortest distance between the edge of the first insulating layer and the hole wall of the lead-out hole is x, where x>0. This further increases the barrier to water vapor paths provided by the first insulating layer.

[0015] In some embodiments, the depth of the lead-out hole is h, and x and h satisfy the following condition: x+h≥5mm.

[0016] In some embodiments, one or more of the following conditions are met:

[0017] (1) 2mm≤h≤10mm;

[0018] (2) 3mm≤x≤40mm.

[0019] In some of these embodiments, 10 mm ≤ x + h ≤ 50 mm.

[0020] In some embodiments, one or more of the following conditions are met:

[0021] (1) 2mm≤h≤5mm;

[0022] (2) 3mm≤x≤8mm;

[0023] (3) 10mm≤x+h≤13mm.

[0024] In this way, by controlling the range of x+h, the water vapor blocking path of the first insulating layer and the second insulating layer is further increased, which can effectively prevent the contact between the photovoltaic structure functional layer and water vapor, thereby improving the water vapor blocking performance of the first insulating layer and the second insulating layer. Furthermore, by adjusting the range of x+h, on the one hand, the water vapor blocking performance of the solar cell can be improved, and on the other hand, the area of ​​the first insulating layer can be controlled, the dead zone area of ​​the solar cell can be reduced, and the impact on the output power of the solar cell can be reduced.

[0025] In some embodiments, the first insulating layer is connected to the substrate and the packaging layer respectively. In this way, the first insulating layer can play a good role in buffering stress and preventing water vapor at the lead-out hole.

[0026] In some embodiments, one or more of the following conditions are met:

[0027] (1) The total thickness of the first insulating layer is 0.20 mm to 0.80 mm;

[0028] (2) The thickness of the second main body is 0.03 mm to 0.25 mm. In some embodiments, the photovoltaic structure includes a plurality of sub-cells arranged in sequence in a first direction, and the first insulating layer is arranged along the first direction; and one or more of the following conditions are also met:

[0029] (1) The length of the first insulating layer in the first direction is ≥ the total length of the plurality of sub-cells in the first direction;

[0030] (2) A width of the first insulating layer in a direction perpendicular to the first direction is less than a length of the first insulating layer in the first direction.

[0031] In this way, by controlling the length of the first insulating layer in the first direction to be greater than or equal to the total length of the plurality of sub-cells in the first direction, a better insulation effect is achieved to prevent short circuits between the sub-cells. By controlling the width of the first insulating layer in a direction perpendicular to the first direction to be less than the length of the first insulating layer in the first direction, the dead zone area can be effectively reduced.

[0032] In some embodiments, when the distances between two edges of the first insulating layer in a direction perpendicular to the first direction and the hole walls of the lead-out hole are equal, the width w of the first insulating layer in a direction perpendicular to the first direction, the aperture φ of the lead-out hole, and the depth h of the lead-out hole satisfy the following condition: (w-φ) / 2+h≥10mm.

[0033] In some embodiments, the first insulating layer and the second insulating layer independently include one or more of a butyl adhesive layer, a polyisoprene layer, a TPO hot melt adhesive layer, a glass melt layer, and a polyolefin elastomer hot melt adhesive layer. In this way, the above materials can achieve insulation and water blocking effects.

[0034] In some embodiments, the bus structure further includes a third insulating layer, which is disposed on a surface of the encapsulation layer away from the substrate and around the lead-out terminal, and a projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is within a projection of the third insulating layer on the substrate along the thickness direction of the photovoltaic structure. In this way, the third insulating layer can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water-blocking performance.

[0035] In some embodiments, the projection area of ​​the third insulating layer on the substrate along the thickness direction of the photovoltaic structure is larger than the projection area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure. In this way, the projection area of ​​the third insulating layer on the substrate is larger than the projection area of ​​the lead-out hole on the substrate, which can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water-blocking performance.

[0036] In some embodiments, the solar cell includes at least two busbars, and the first main bodies of the at least two busbars are respectively connected to the positive electrode and the negative electrode of the photovoltaic structure.

[0037] In some embodiments, the light absorbing layer comprises a perovskite light absorbing layer. In this way, the solar cell is a perovskite solar cell.

[0038] A second aspect of the present application provides a photovoltaic module, comprising the solar cell provided in the first aspect of the present application.

[0039] The third aspect of the present application provides an electrical device, comprising at least one selected from the solar cell provided in the first aspect of the present application and the photovoltaic module provided in the second aspect of the present application.

[0040] The fourth aspect of the present application provides a power generation device, comprising at least one selected from the solar cell provided in the first aspect of the present application and the photovoltaic module provided in the second aspect of the present application.

[0041] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to better describe and illustrate the embodiments or examples provided by the present application, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of the disclosed application, the embodiments or examples currently described, and any of the best modes of these applications currently understood. Moreover, the same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0043] Figure 1 1 is a schematic diagram of a partial cross-sectional structure of a solar cell at a lead-out hole along a first direction F1 according to an embodiment of the present application.

[0044] Figure 2 yes Figure 1 The shown schematic diagram is a partial cross-sectional structure of a solar cell at the lead-out hole along direction F2.

[0045] Figure 3 It is a schematic diagram of an electrical device using a solar cell as a power source according to another embodiment of the present application.

[0046] Figure 4 This is a schematic diagram of the P4 marking of the edge clearing area in Example 1 of the present application.

[0047] Figure 5 It is a schematic diagram of the top view structure after the edge cleaning process in step (7.1) in Example 1 of the present application.

[0048] Figure 6 It is a schematic diagram of the top view structure after step (7.2) in Example 1 of the present application.

[0049] Figure 7 It is a schematic diagram of the top view of the structure after the longitudinal bus bar is set in step (7.3) of Example 1 of the present application.

[0050] Figure 8 It is a schematic diagram of the top view of the structure after the transverse bus bar is set in step (7.3) of Example 1 of the present application.

[0051] Fig. 9 It is a schematic diagram of the equivalent circuit of the photovoltaic structure obtained in step (7.3) of Example 1 of the present application.

[0052] Fig.10 It is a schematic diagram of a top view of a confluence structure in another embodiment of the present application.

[0053] Fig.11 It is a schematic diagram of the top view structure after step (7.4) in Example 1 of the present application.

[0054] Fig.12 It is a schematic diagram of the top view structure after step (7.5) in Example 1 of the present application.

[0055] Fig.13 It is a schematic diagram of the top view structure after step (7.6) in Example 1 of the present application.

[0056] Fig.14 It is a schematic diagram of P4 marking of the edge clearing area in comparative example 1 of the present application.

[0057] Fig.15 It is a schematic diagram of the top view structure after step (7.1) in comparative example 1 of the present application.

[0058] Fig.16 It is a schematic diagram of the cross-sectional structure of the solar cell at the lead-out hole prepared in Comparative Example 1 of the present application.

[0059] Description of reference numerals:

[0060] 1. Solar cell; 110. Substrate; 120. Photovoltaic structure; 130. Bus structure; 140. Encapsulation layer; 150. Buffer rubber layer; 160. Edge-sealing butyl rubber strip;

[0061] 121, first electrode layer; 122, light absorption layer; 123, second electrode layer; 124, first transmission layer; 125, second transmission layer;

[0062] 131, busbar; 1311, first main body; 1312, second main body; 1313, lead-out terminal; 132, first insulating layer; 1321, first butyl rubber strip; 1322, second butyl rubber strip; 133, second insulating layer; 134, third insulating layer; 1314, third busbar;

[0063] 2. Electrical equipment. DETAILED DESCRIPTION

[0064] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0065] "Scope" disclosed in the present application can be limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a special range. The scope limited in this way can be including end values ​​or excluding end values, and any end value can be included or not included independently, and can be combined arbitrarily, that is, any lower limit can be combined with any upper limit to form a scope. For example, if the scope of 60-120 and 80-110 is listed for a specific parameter, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range values ​​1 and 2 listed, and if the maximum range values ​​3,4 and 5 are also listed, the following scope can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise specified, the numerical range "ab" represents the abbreviation of any real number combination between a and b, wherein a and b are real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For example, when a parameter is expressed as an integer selected from "2-10", it is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0066] In the present application, "plurality", "multiple" and the like, unless otherwise specified, refer to a number greater than or equal to 2. For example, "one or more" means one or greater than or equal to two.

[0067] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0068] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment or implementation of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments. The "implementation methods" mentioned herein have a similar understanding.

[0069] Those skilled in the art will appreciate that, in the methods of each embodiment or example, the order in which each step is written does not mean a strict order of execution and does not constitute any limitation on the implementation process, and the detailed order of execution of each step should be determined by its function and possible internal logic. If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or steps (b) and (a) performed sequentially. For example, the method may also include step (c), indicating that step (c) can be added to the method in any order, for example, the method may include steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0070] In this application, in the open technical features or technical solutions described by the words "contain", "include", "include", etc., if there is no other explanation, additional members other than the listed members are not excluded, and it can be regarded as providing both closed features or solutions consisting of the listed members and open features or solutions including additional members in addition to the listed members. For example, A includes a1, a2 and a3. If there is no other explanation, it may also include other members or may not include additional members. It can be regarded as providing both the feature or solution of "A consists of a1, a2 and a3" and the feature or solution of "A includes not only a1, a2 and a3, but also other members".

[0071] In this application, unless otherwise specified, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B.

[0072] In this application, "optionally", "optional", and "optional" mean optional, that is, any one of the two parallel schemes of "yes" or "no". If there are multiple "options" in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "option" is independent.

[0073] See also Figure 1 and Figure 2 In a first aspect of the present application, a solar cell 1 is provided, comprising a substrate 110 , a photovoltaic structure 120 , a busbar structure 130 and an encapsulation layer 140 .

[0074] Please continue reading Figure 2 The photovoltaic structure 120 includes a first electrode layer 121, a light absorbing layer 122, and a second electrode layer 123 which are sequentially stacked on the substrate 110. It can be understood that the photovoltaic structure 120 includes a plurality of sub-cells divided by channel groups.

[0075] Please continue reading Figure 1 The photovoltaic structure 120 and the bus structure 130 are located on the same side of the substrate 110. The bus structure 130 includes a bus 131, a first insulating layer 132 and a second insulating layer 133. The bus 131 includes a first main body 1311 (see Figure 7 and Figure 8 ), the second main body 1312 and the lead-out end 1313, the first main body 1311 is connected to the second electrode layer 123 (see Figure 7 and Figure 8 ), the first insulating layer 132 is wrapped around the outer surface of the second main body 1312 and is located on the substrate 110, the lead end 1313 includes a connected built-in section and an external section, and the second insulating layer 133 is wrapped around the built-in section of the lead end 1313.

[0076] See also Figure 2 , the lead-out hole is located near the middle of the encapsulation layer 140, and the first insulating layer 132 is located in the middle of the photovoltaic structure 120. Further, the first insulating layer 132 is arranged to divide the photovoltaic structure 120 into two partitions, which are respectively located on both sides of the first insulating layer 132, and the two partitions are connected by the first main body 1311.

[0077] It is understandable that the lead-out hole can be located near the two ends of the encapsulation layer 140 or near the middle of the encapsulation layer 140, and can lead the current generated by the photovoltaic structure to the external circuit. In one embodiment, the lead-out hole is located near the middle of the encapsulation layer 140 to facilitate the stability of the lead-out hole punching process; in another embodiment, the lead-out hole is located near the two ends of the encapsulation layer 140. When there are two or more lead-out holes, taking two as an example, the lead-out holes are located near the two ends of the encapsulation layer 140. The two lead-out holes can be located on different sides of the encapsulation layer 140 near the two ends. At this time, the external section led out by the lead-out hole can be led out through a split junction box, or the two lead-out holes can be located on the same side of the encapsulation layer 140 near the two ends. At this time, the external section led out by the lead-out hole can be led out through a centralized junction box.

[0078] It can be further understood that the first insulating layer 132 being located in the middle of the photovoltaic structure 120 means that the first insulating layer can divide the photovoltaic structure 120 into two partitions. The first insulating layer can divide the photovoltaic structure 120 into two partitions with the same area size or two partitions with different area sizes, and the two partitions are connected by the first main body 1311.

[0079] In addition, the provision of the first insulating layer 132 can effectively reduce the clear edge area and obtain good water vapor blocking performance, thereby simultaneously obtaining good photoelectric conversion efficiency and device stability.

[0080] The encapsulation layer 140 and the substrate 110 cooperate to form an encapsulation structure. The photovoltaic structure 120 and the busbar structure 130 are located within the encapsulation structure, except that the lead-out terminal 1313 is located within the encapsulation structure, and an lead-out hole (not marked in the figure) is provided on the encapsulation layer 140. The internal section of the lead-out terminal 1313 wrapped with the second insulating layer 133 is located in the lead-out hole, and the external section of the lead-out terminal 1313 is located outside the encapsulation layer 140. The projection of the lead-out hole on the first insulating layer 132 is located within the first insulating layer 132; in other words, the projection of the lead-out hole on the substrate 110 along the thickness direction of the photovoltaic structure is located within the projection of the first insulating layer 132 on the substrate 110 along the thickness direction of the photovoltaic structure. That is, the projection of the lead-out hole on the substrate 110 along the thickness direction of the photovoltaic structure does not exceed the outer contour of the projection of the first insulating layer 132 on the substrate 110 along the thickness direction of the photovoltaic structure.

[0081] It can be understood that, since the lead-out hole is opened in the thickness direction of the encapsulation layer 140 and penetrates the encapsulation layer 140 , generally, the depth h of the lead-out hole is the same as the thickness of the encapsulation layer 140 .

[0082] The above-mentioned solar cell 1 removes the photovoltaic structure 120 below the lead-out hole, that is, the photovoltaic structure 120 is not set at the lead-out hole, and the first insulating layer 132 is directly set on the substrate 110 at the lead-out hole, and the second main body 1312 of the busbar 131 is wrapped in the first insulating layer 132, and the lead-out end 1313 wrapped with the second insulating layer 133 is also set in the lead-out hole, thereby increasing the water vapor blocking path of the first insulating layer 132 and the second insulating layer 133, which can effectively block the contact between the functional layer of the photovoltaic structure 120 and water vapor, thereby improving the water vapor blocking performance of the first insulating layer 132 and the second insulating layer 133. Moreover, since the first insulating layer 132 is directly arranged on the substrate 110, the first insulating layer 132 is avoided from damaging the functional layer of the photovoltaic structure 120 when it is arranged on the photovoltaic structure 120, thereby improving the stress stability of the solar cell 1. At the same time, since the photovoltaic structure 120 is not arranged below the first insulating layer 132, it is also avoided that the photovoltaic structure 120 here generates heat due to long-term operation, resulting in aging of the insulating layer and other adverse effects on the stability of the first insulating layer 132. Therefore, the solar cell 1 is improved in structure, coordinated in terms of water resistance, stress stability and heat management, thereby improving the structural stability of the solar cell 1, and further improving the photoelectric performance stability of the solar cell 1.

[0083] It is understandable that the first insulating layer 132 is directly disposed on the substrate 110. In one embodiment, the first insulating layer 132 is directly in contact with the substrate 110, and the operation is simple. It is only necessary to remove the photovoltaic structure on the corresponding substrate and then lay the first insulating layer. In another embodiment, other layers, such as a water-blocking functional layer, etc., can be laid between the first insulating layer and the substrate.

[0084] In some of the embodiments, the components of the first insulating layer 132 and the second insulating layer 133 independently include at least one of butyl rubber, polyisoprene, TPO hot melt adhesive, POE (polyolefin elastomer) hot melt adhesive and glass melt.

[0085] Further, the first insulating layer 132 and the second insulating layer 133 each independently include one or more of a butyl adhesive layer, a polyisoprene layer, a TPO hot melt adhesive layer, a glass melt layer, and a polyolefin elastomer hot melt adhesive layer.

[0086] In this article, when multiple objects are independently selected, it means that each object in the multiple objects can be independently selected without affecting each other, and can be the same or different. The materials of the first insulating layer 132 and the second insulating layer 133 can be the same or different.

[0087] Further, the POE hot melt adhesive includes but is not limited to ethylene-α-octene copolymer. Further, the glass melt is a fine powder low-temperature melting point glass, which softens and flows when heated at a low temperature to form a seal or coating; further, the melting point of the glass melt is lower than 160°C and optionally lower than 100°C, and laser-assisted rapid melting can be used during melting.

[0088] Compared with epoxy resin and silicone, butyl rubber, polyisoprene, TPO hot melt adhesive, POE (polyolefin elastomer) hot melt adhesive and glass melt have lower WVTR (water vapor transmission rate), that is, better performance in blocking water vapor.

[0089] Among them, although butyl rubber, polyisoprene and other materials have relatively better water vapor barrier performance, they have high viscosity and hard texture. If the first insulating layer 132 formed by these materials is directly set on the photovoltaic structure 120 functional layer such as the light absorbing layer 122, it will cause initial damage to the photovoltaic structure 120 during the lamination process; in addition, the thermal expansion coefficients between these materials and the photovoltaic structure 120 functional layer are not matched, and the stress concentration generated cannot be dispersed, which will cause the perovskite layer and other light absorbing layers 122 to decompose, affecting the stability of the solar cell 1; in addition, if the photovoltaic structure 120 is set at the lead-out hole position, the heat generated by the photovoltaic structure 120 for a long time will accumulate, resulting in heat dissipation difficulties, and ultimately causing the stability of the solar cell 1 to decrease. However, since the first insulating layer 132 in the present application is directly set on the substrate 110, there is no problem of initial damage to the photovoltaic structure 120 caused by the lamination, stress concentration and heat accumulation leading to a decrease in the stability of the solar cell 1, so it can have better photoelectric performance stability.

[0090] In some of the embodiments, the first insulating layer 132 and the second insulating layer 133 are each independently a black insulating layer, which is consistent with the color of the back panel of the solar cell 1, which can increase the aesthetics and absorb some ultraviolet rays to protect the components on the back.

[0091] As an example, the first insulating layer 132 is a butyl rubber layer or a polyisoprene layer, and may also include a composite insulating layer of both butyl rubber and polyisoprene. As an example, the second insulating layer 133 is a butyl rubber layer or a polyisoprene layer, and may also include a composite insulating layer of both butyl rubber and polyisoprene. In this way, these materials not only have good water vapor barrier properties, but also can ensure the color consistency of the back panel of the solar cell 1, with strong aesthetics, and can also absorb some ultraviolet rays to protect the components on the back.

[0092] Further, the components of the first insulating layer 132 may also optionally include a desiccant. Further, the components of the second insulating layer 133 may also optionally include a desiccant. The components of the desiccant may be common reagents that can absorb moisture, including but not limited to physical desiccants such as molecular sieves, porous nano-silicon, etc., reactive desiccants such as desiccant calcium oxide, anhydrous calcium dichloride, etc., one or more.

[0093] In some embodiments, the two partitions are connected in series or in parallel through the first main body. In one embodiment, the sub-batteries in each partition are connected in series, and the two partitions are connected in parallel, thereby forming a circuit that is first connected in series and then in parallel. Fig. 9 As shown. In another embodiment, the sub-batteries in each partition are connected in series, and the two partitions are connected in series, thereby forming a series circuit. In the implementation of the series connection between the two partitions, the channel groups of the multiple sub-batteries into which the sub-batteries in the two partitions are divided by the channel groups can select channel groups with the same direction (the channel groups of the two partitions are both in the marking direction of P1P2P3), or can be opposite channel groups (the channel groups of the two partitions are respectively in the marking direction of P1P2P3 and the marking direction of P3P2P1). It can be further understood that the sub-batteries in each partition can also be connected in series and parallel or other connection modes, and those skilled in the art can choose according to actual needs.

[0094] In some embodiments, the area of ​​the first insulating layer 132 is larger than the projection area of ​​the lead-out hole on the first insulating layer 132. In other words, the projection area of ​​the lead-out hole on the substrate 110 along the thickness direction of the photovoltaic structure is smaller than the projection area of ​​the first insulating layer 132 on the substrate 110 along the thickness direction of the photovoltaic structure.

[0095] This further increases the barrier effect of the first insulating layer 132 on water vapor.

[0096] Furthermore, in a transverse plane perpendicular to the thickness direction of the photovoltaic structure 120, the shortest distance between the edge of the first insulating layer 132 and the hole wall of the lead-out hole is x, where x>0. That is, the projected outer contour of the lead-out hole is entirely within the projected outer contour of the first insulating layer 132 and does not overlap with the edge of the first insulating layer 132. This further increases the barrier to water vapor paths of the first insulating layer 132.

[0097] In some embodiments, the depth of the lead-out hole is h, and x and h satisfy the following conditions: x+h≥5mm; as an example, the sum of x+h may include but is not limited to 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 10.5mm, 10.8mm, 11mm, 12mm, 13mm, 15mm, 20mm, 30mm, 40mm, 50mm, and in some examples, it may also be within the range formed by any two of the above point values ​​as end values. Further, x+h≥7mm, or x+h≥10mm. Further, 10mm≤x+h≤50mm. Further, 10mm≤x+h≤13mm.

[0098] In this way, by controlling the range of x+h, the water vapor blocking path of the first insulating layer 132 and the second insulating layer 133 is further increased, which can effectively prevent the contact between the functional layer of the photovoltaic structure 120 and water vapor, thereby improving the water vapor blocking performance of the first insulating layer 132 and the second insulating layer 133. Furthermore, by adjusting the range of x+h, on the one hand, the water vapor blocking performance of the solar cell 1 can be improved, and on the other hand, the area of ​​the first insulating layer 132 can be controlled, the dead zone area of ​​the solar cell 1 can be reduced, and the photoelectric conversion efficiency of the solar cell 1 can be improved.

[0099] Further, 2mm≤h≤10mm. As an example, the depth h of the lead-out hole may include but is not limited to 2mm, 2.2mm, 2.5mm, 3mm, 3.2mm, 3.5mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm. Further, 2mm≤h≤5mm; further, 2mm≤h≤4mm. The depth h of the lead-out hole is controlled within this range. On the one hand, the performance requirements of the package are taken into consideration. On the other hand, the shortest water vapor blocking path of the second insulating layer 133 along the depth direction of the lead-out hole, i.e., the vertical direction F2, can be increased, thereby improving the water blocking performance of the insulating layer.

[0100] Furthermore, the encapsulation layer 140 may be a glass cover plate. Furthermore, the depth h of the lead-out hole is the thickness of the encapsulation layer 140 .

[0101] Further, 3mm≤x≤40mm. As an example, the shortest distance x may include but is not limited to 3mm, 3.5mm, 3.8mm, 4mm, 5mm, 6mm, 6.5mm, 6.8mm, 7mm, 7.5mm, 7.6mm, 8mm, 9mm, 10mm, 15mm, 20mm, 30mm, 40mm, and 50mm. Further, 3mm≤x≤8mm. The shortest distance x between the edge of the first insulating layer 132 and the hole wall of the lead-out hole is further controlled within this range, which can increase the shortest water vapor blocking path of the first insulating layer 132 in the vertical direction and the lateral direction, thereby improving the water blocking performance of the insulating layer.

[0102] In some embodiments, the first insulating layer 132 is respectively connected to the substrate 110 and the encapsulation layer 140. In other words, the first insulating layer 132 is filled between the substrate 110 and the encapsulation layer 140, and the thickness of the first insulating layer 132 is the same as or equivalent to the total thickness of the photovoltaic structure 120. Therefore, the first insulating layer 132 can play a good role in buffering stress and preventing water vapor at the lead-out hole.

[0103] In some embodiments, the total thickness H of the first insulating layer 132 is 0.20-0.80 mm, and further can be 0.5-0.7 mm. It can be understood that the total thickness of the first insulating layer 132 refers to the thickness of the first insulating layer 132 in the stacking direction of the photovoltaic structure 120. As an example, the total thickness of the first insulating layer 132 can be 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.55 mm, 0.6 mm, 0.65 mm, 0.7 mm, 0.8 mm.

[0104] Understandable, see Figures 4 to 13 In the preparation process, the photovoltaic structure 120 at the position where the first insulating layer 132 is required to be set below the lead-out hole can be removed first, and then a first layer of insulating rubber strips can be set on the substrate 110 below the lead-out hole, and then a second main body 1312 can be set on the first layer of insulating rubber strips, and then a second layer of insulating rubber strips can be set above the second main body 1312, and then after the encapsulation layer 140 is set, hot lamination is performed, so that the first layer of insulating rubber strips and the second layer of insulating rubber strips are hot-melted to form a whole, that is, the first insulating layer 132. In a specific example, the first layer of insulating rubber strips and the second layer of insulating rubber strips can be butyl rubber strips; their thickness can be selected as needed, for example, it can be 0.4 mm.

[0105] Furthermore, the lamination temperature may be 110-120° C., and the vacuum holding time may be 500-600 s.

[0106] Furthermore, during the preparation process, the outer surface of the second main body 1312 may be wrapped with a fourth insulating layer, and the fourth insulating layer is hot-melted with the first insulating adhesive strip and the second insulating adhesive strip during the hot lamination process to form a whole, that is, the first insulating layer 132. It can be understood that the material selection of the fourth insulating layer can be the same as the material of the first insulating layer 132, and in a specific example, can be the same as the material of the first insulating layer 132.

[0107] It is understandable that, in addition to using the above-mentioned preparation process to wrap the first insulating layer 132 around the outer surface of the second main body 1312 , other processes in the art may also be used to achieve this.

[0108] In some embodiments, the thickness of the second body portion 1312 is 0.03 mm to 0.25 mm, and further can be 0.1 mm to 0.15 mm. As an example, the thickness of the second body portion 1312 can be 0.03 mm, 0.05 mm, 0.08 mm, 0.10 mm, 0.12 mm, 0.15 mm, 0.2 mm, or 0.25 mm.

[0109] See also Figure 7 In some embodiments, the photovoltaic structure 120 includes a plurality of sub-cells sequentially arranged in a first direction F1, and the first insulating layer 132 is arranged along the first direction F1. It can be understood that the plurality of sub-cells sequentially arranged in the first direction F1 are divided by the channel group, so the length direction of each channel in the channel group intersects with the first direction F1, and further, the length direction of each channel in the channel group is perpendicular to the first direction F1.

[0110] Furthermore, the length of the first insulating layer 132 in the first direction F1 is greater than or equal to the total length of the plurality of sub-cells in the first direction F1. In other words, all the photovoltaic structures 120 along the first direction F1 below the lead-out hole are cleared of a certain width, and then the first insulating layer 132 is disposed on the substrate 110 where the photovoltaic structures 120 are cleared.

[0111] Furthermore, a width of the first insulating layer 132 in a direction F3 perpendicular to the first direction F1 is smaller than a length of the first insulating layer 132 in the first direction F1.

[0112] Further, the first insulating layer 132 includes two opposite first edges parallel to the first direction F1; in a specific example, the projection of the lead-out hole on the first insulating layer 132 is located within the first insulating layer 132. Since the length of the first insulating layer 132 is greater than the width, and the lead-out hole is a position where penetration is likely to occur, the distances between the two first edges and the nearest points of the hole wall of the lead-out hole in the second direction passing through the center point of the lead-out hole and perpendicular to the first direction F1 are controlled to be x and x, respectively. 1 and x 2 .x1 and x 2 The smaller one is the shortest distance x mentioned above.

[0113] That is, the shortest distance x is the smaller of the distances between the closest points of the two first edges and the hole wall of the lead-out hole in the second direction passing through the center point of the lead-out hole and perpendicular to the first direction F1.

[0114] Furthermore, the lead-out hole is located in the middle of the encapsulation layer 140, and the distance (x 1 and x 2 ) can be set to be equal, that is, the distances between the two first edges of the first insulating layer 132 in the direction perpendicular to the first direction F1 and the hole wall of the lead-out hole are equal. Further, x 1 =x 2 = x, so the width of the first insulating layer 132 in the second direction is w=2x+φ. Wherein φ is the aperture of the lead-out hole. This situation is generally applicable to the case where the lead-out hole is opened in the packaging layer 140. In this case, optionally, the center point of the lead-out hole is used as the center, and the edges are cleared to the same distance on both sides along the second direction, and the total width of the cleared edges in the second direction is w=2x+φ.

[0115] Further, the width w of the first insulating layer 132 in the direction perpendicular to the first direction and the diameter φ of the lead-out hole satisfy the following condition: (w−φ) / 2+h≥10 mm.

[0116] See also Figure 1 In some embodiments, the bus structure 130 further includes a third insulating layer 134, which is disposed on the surface of the encapsulation layer 140 away from the substrate 110 and around the lead-out terminal 1313, and the projection of the lead-out hole on the first insulating layer 132 is located within the projection of the third insulating layer 134 on the first insulating layer 132. In other words, the projection of the lead-out hole on the substrate 110 along the thickness direction of the photovoltaic structure 120 is within the projection of the third insulating layer 134 on the substrate 110 along the thickness direction of the photovoltaic structure 120. In this way, the third insulating layer 134 can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water-blocking performance. Furthermore, the projection area of ​​the third insulating layer 134 on the substrate 110 along the thickness direction of the photovoltaic structure 120 is larger than the projection area of ​​the lead-out hole on the substrate 110 along the thickness direction of the photovoltaic structure 120.

[0117] It can be understood that the material of the third insulating layer 134 can be the same as that of the first insulating layer 132 . In a specific example, the third insulating layer 134 can be the same as that of the first insulating layer 132 .

[0118] Furthermore, in order to reduce the width w of the first insulating layer 132 in the direction perpendicular to the first direction F1 as much as possible to reduce the edge clearing area, w and the aperture φ of the lead-out hole satisfy the following condition: (w-φ) / 2+h=10mm. Furthermore, the distances between the two first edges and the nearest points of the hole wall of the lead-out hole are equal, both x; the width w of the first insulating layer 132 in the direction perpendicular to the first direction=2x+φ.

[0119] Furthermore, the width w of the first insulating layer 132 in a direction perpendicular to the first direction F1 is the same as the edge clearance distance in the direction. This is because the insulating layer material is disposed on the edge clearance area and is melted and flowed by subsequent thermal lamination and uniformly filled under pressure.

[0120] Please continue reading Figure 7 In some embodiments, the extension direction of the first main body 1311 is perpendicular to the first direction F1. Further, the first main body 1311 is arranged along the length direction (or the extension direction) of the second electrode layer 123 connected thereto. Further, the extension direction of the first insulating layer 132 is perpendicular to the length direction of the second electrode layer 123 of the sub-cell.

[0121] It can be understood that the photovoltaic structure 120 is divided into a plurality of sub-cells by the channel group. In other words, the stacked first electrode layer 121, the light absorbing layer 122 and the second electrode layer 123 are divided into a plurality of sub-cells connected in series, and each sub-cell includes a stacked first electrode layer 121, a light absorbing layer 122 and a second electrode layer 123. The first main body 1311 is connected to at least one of the sub-cells. Further, in order to increase the effective cell area of ​​the photovoltaic module, the first main body 1311 is connected to the second electrode layer 123 of the outermost terminal cell of the plurality of sub-cells. Further, the first main body 1311 is arranged along the length direction of the second electrode layer 123 of the outermost terminal cell to improve the convergence effect.

[0122] In some embodiments, the solar cell 1 includes at least two busbars 131, and the first main bodies 1311 of the at least two busbars 131 are respectively connected to the positive electrode and the negative electrode of the photovoltaic structure 120, so that the at least two busbars 131 are respectively connected to the positive electrode and the negative electrode of the photovoltaic structure 120. In one embodiment, the first main bodies 1311 of the at least two busbars 131 are respectively connected to the second electrode layers 123 of the two sub-cells, wherein the second electrode layer 123 of one sub-cell serves as the positive electrode, and the second electrode layer 123 of the other sub-cell serves as the negative electrode. In another embodiment, the first main bodies 1311 of the at least two busbars 131 are respectively connected to the second electrode layer 123 of one sub-cell and the first electrode layer 122 of the other sub-cell, wherein the second electrode 123 of one sub-cell serves as one of the positive electrode or the negative electrode, and the first electrode layer 122 of the other sub-cell serves as the other of the positive electrode or the negative electrode. Further, the two sub-cells are the two outermost sub-cells on both sides, and such a design can reduce the dead area of ​​the solar cell.

[0123] For further information, see Figure 7 and Figure 8 In one embodiment, when the photovoltaic structure 120 is divided into two partitions by the first insulating layer 132, the bus 131 includes two, wherein the first main body 1311 of one of the two buss 131 is simultaneously connected to the two second electrode layers 123 at the same end of the two partitions, and the first main body 1311 of the other bus 131 is simultaneously connected to the two second electrode layers 123 at the other end of the two partitions, thereby realizing a parallel connection of the two partitions.

[0124] In this way, the two busbars 131 are electrically connected to the positive electrode and the negative electrode of the photovoltaic structure 120 respectively, and the current of the photovoltaic structure 120 can be led out through the lead-out portion of the busbar 131 for energy storage or electric drive.

[0125] For further information, see Fig.10 (The lead end is not shown in the figure). In one embodiment, when the photovoltaic structure 120 is divided into two partitions by the first insulating layer 132, and the two partitions have opposite channel groups (the channel group of one partition is in the marking direction of P1→P2→P3, and the channel group of the other partition is in the marking direction of P3→P2→P1), the bus bar 131 includes three bus bars, among which the first main body 1311 of one of the two bus bars 131 is connected to the second electrode layer 123 of one of the partitions (exemplarily the positive pole), the first main body 1311 of the other bus bar 131 is connected to the second electrode layer 123 of the other partition (exemplarily the negative pole), and the third bus bar 1314 is simultaneously connected to the two second electrode layers 123 at the other ends of the two partitions, thereby realizing the series connection of the two partitions.

[0126] In some embodiments, the material of the busbar 131 includes a conductive material. Using a conductive material as the material of the busbar 131 can ensure the conductivity of the busbar structure 130, realize the collection of current, and improve the working efficiency and stability of the circuit. Further, the conductive material includes at least one of a metal material, a carbon material, and a conductive metal oxide. Among them, the metal material includes one or more of gold, silver, titanium, copper, and aluminum; the carbon material includes one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; the conductive metal oxide includes one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In some examples, the busbar 131 may be a stack of one or more of a metal layer, a carbon material layer, and a conductive metal oxide layer.

[0127] In some embodiments, the materials of the first body 1311, the second body 1312 and the lead-out end 1313 of the busbar 131 may be the same or different. In a specific example, the first body 1311 of the busbar 131 is a longitudinal busbar, the second body 1312 and the lead-out end 1313 connected to each other are a transverse busbar and the lead-out end 1313 of the transverse busbar, and the longitudinal busbar and the transverse busbar are connected to each other.

[0128] In some embodiments, the solar cell 1 further includes an external outflow piece 131 (not shown) and a junction box (not shown), the external outflow piece 131 is connected to the second main body 1312, and the junction box is connected to the external outflow piece 131, and is used to lead the current of the solar cell 1 to the outside of the photovoltaic module. The provision of the junction box and the external outflow piece 131 helps to lead the current of the solar cell 1 to the outside of the photovoltaic module, which can be used to drive a load or store electrical energy. The external outflow piece 131 can be connected to the second main body 1312 by welding, laying, etc.

[0129] Further, the substrate 110 is a transparent substrate 110 , which includes a glass substrate 110 or an organic polymer film, wherein the organic polymer film includes one of polyethylene terephthalate (PET) and polyethylene naphthalate (PEN).

[0130] See also Figure 2Furthermore, a buffer adhesive layer 150 is further included between the encapsulation layer 140 and the second electrode layer 123. The buffer adhesive layer 150 can be formed by softening and casting the original film of the buffer adhesive layer 150 under lamination conditions. The buffer adhesive layer 150 can buffer the stress on the light absorbing layer 122 such as the perovskite layer, and can also have a certain sealing effect on the solar cell 1. The buffer adhesive layer 150 includes at least one of polyolefin elastomer (POE), ethylene-vinyl acetate copolymer (EVA), thermoplastic polyurethane elastomer (TPU) and polyvinyl butyral (PVB).

[0131] Please continue reading Figure 2 Further, the photovoltaic structure 120 further includes at least one of a first transmission layer 122 and a second transmission layer 125. The first transmission layer 122 is disposed between the first electrode layer 121 and the light absorbing layer 122; further, the second transmission layer 125 is disposed between the second electrode layer 123 and the light absorbing layer 122. One of the first transmission layer 122 and the second transmission layer 125 is an electron transmission layer, and the other is a hole transmission layer.

[0132] Among them, P1, P2, and P3 are etching areas arranged across layers, which are used to divide the film layer prepared in a large area into different components, so that it presents a series battery structure; wherein P1, P2, and P3 are respectively used to connect the structural layers arranged apart, so that the structural layers between the first electrode layer 121 of one sub-cell and the second electrode layer 123 of another sub-cell form a passage, and multiple perovskite sub-cells form a perovskite battery component. P1, P2, and P3 can each independently be a linear etching area, also called an etching line, and the three form a channel group to divide the photovoltaic structure 120 into multiple sub-cells. P1, P2, and P3 can each independently be a laser etching area. The number of P1, P2, and P3 can each independently be one or more.

[0133] As an example, P1 passes through the bottom of the first electrode layer 121 from the surface of the first electrode layer 121 and is connected to the substrate 110, so that the first electrode layers 121 on the left and right sides (or adjacent sub-cells) of the split P1 are not connected to each other (to achieve insulation); further, the material in the P1 etching area is consistent with that in the first transmission layer 122.

[0134] As an example, P2 penetrates the light absorbing layer 122, and the material of the P2 etching area is consistent with the material of the second electrode layer 123, or other materials (such as PbSO 4The protective layer is used to prevent the material of the second electrode layer 123 or water and oxygen from directly contacting the light absorbing layer 122, so as to connect the first electrode layer 121 and the second electrode layer 123 of the adjacent sub-cells. As another example, P2 runs through the second transmission layer 125, the light absorbing layer 122, and the first transmission layer 124, and the material of the P2 etching area is consistent with the material of the second electrode layer 123, or other materials (such as PbSO 4 A protective layer) is provided to prevent the material of the second electrode layer 123 or water and oxygen from directly contacting the light absorbing layer 122, so as to connect the first electrode layer 121 and the second electrode layer 123 of adjacent sub-cells.

[0135] As an example, P3 cuts through the second electrode layer 123, or P3 penetrates the second electrode layer 123, the second transmission layer 125, the light absorption layer 122, the first transmission layer 124 from the surface of the second electrode layer 123 to the upper surface of the first electrode layer 121, so that the second electrode layers 123 on the left and right sides of P3 (or adjacent sub-cells) are not connected to each other (to achieve insulation). The P3 etching area is filled with material or not filled with material, and those skilled in the art can choose according to actual needs. As an example, PbSO can be filled outside the perovskite layer in the P3 etching area 4 The protective layer can protect the exposed light absorbing layer 122 , isolate water and oxygen, and improve the stability of the solar cell 1 .

[0136] In some embodiments, the width of P1 is 10 μm to 50 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, or 50 μm.

[0137] In some embodiments, the width of P2 is 10 μm to 200 μm, such as 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100 μm, 150 μm, 180 μm, 200 μm. Further, the interval between P2 and P1 can be 20 μm to 80 μm, such as 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm.

[0138] In some embodiments, the width of P3 is 10 μm to 50 μm, such as 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, and 50 μm. Further, the interval between P3 and P2 may be 20 μm to 40 μm, such as 20 μm, 30 μm, and 40 μm.

[0139] The materials of the electron transport layer include, but are not limited to, one or more of intrinsic n-type semiconductors, modified n-type semiconductors, [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene and its derivatives. Among them, the intrinsic n-type semiconductor includes one or more of tin oxide, titanium oxide, and zinc oxide; the modified n-type semiconductor includes an intrinsic semiconductor doped with at least one of bismuth, aluminum, manganese, magnesium, and chlorine, such as one or more of tin oxide, titanium oxide, and zinc oxide. The preparation method of the electron transport layer includes one or more of spin coating, screen printing, vacuum evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), and active plasma deposition (RPD). In order to further reduce the interface non-radiative recombination, the electron transport layer may be provided with an interface modification layer, including one or more of alkali metal halide salts, organic amine halide salts, and inorganic metal oxides. The structure of the electron transport layer includes one of a single layer, a double layer, and a multilayer.

[0140] The materials of the hole transport layer include but are not limited to CuSCN, CuI, CuS, CuGaO 2 、MoS 2 , molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO 3 , vanadium oxide, polymer of 3-hexylthiophene, poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine], polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine]. The preparation method of the hole transport layer includes one or more of spin coating, screen printing, physical vapor deposition (PVD), active plasma deposition (RPD), doctor blading, and slot die.

[0141] Furthermore, the thickness of the hole transport layer may be 10 nm to 50 nm. As an example, the thickness may be 10, 20 nm, 30 nm, 40 nm, or 50 nm.

[0142] The light absorbing layer 122 may be, but is not limited to, a perovskite light absorbing layer. For example, the light absorbing layer 122 may also include at least one of a dye-sensitized light absorbing layer, a thin-film silicon light absorbing layer, and an organic light absorbing layer. The light absorbing layer 122 can absorb light and be excited by photons to generate hole-electron pairs. Under the action of the electric field, the holes and electrons are separated, and the electrons and holes are respectively transmitted to the first electrode layer 121 and the second electrode layer 123, and then are led out to the external circuit through the current collector 131 to form a loop, which can be used to drive the load to work.

[0143] Taking the perovskite light absorbing layer as an example, the preparation method of the perovskite light absorbing layer can be a commonly used preparation method in the art, including but not limited to one or more of spin coating, doctor blading, slot die, vacuum deposition, and inkjet printing. In order to further reduce the interface non-radiative recombination, the perovskite light absorbing layer can be provided with an interface modification layer, including one or more of organic amine halide salts, organic thiocyanates, Lewis acids, and Lewis bases.

[0144] Furthermore, the crystal structure of the perovskite light absorbing layer is ABX 3 or A 2 CDX 6 Among them, A ion is a monovalent cation, B ion is a divalent metal cation, C ion is a monovalent metal cation, D ion is a trivalent metal cation, and X ion is a monovalent anion.

[0145] Optionally, the A ion is a monovalent cation with a larger radius, including at least one of an organic cation and a metal cation. More preferably, the organic cation includes an organic amine ion, a carboxamidine group (HC(NH 2 ) 2 + , F.A. + ) and at least one of an imidazolyl group; More optionally, the metal cation comprises Li + 、Sodium ion (Na + ), potassium ion (K + ), rubidium ions (Rb + ), cesium ion (Cs + ) at least one of the following. Further, the organic amine ion includes methylamine (CH 3 NH 3 + , M.A. + ), dimethyldiammonium ion (MDA 2+ ), phenylethylammonium ion (PEA + ), oil ammonium ion (OA + ), at least one of ethylamino, propylamino, butylamino, pentylamino and hexylamino.

[0146] Optionally, the B ions include Pb 2+ Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ 、Zn 2+ ,Ge 2+ , Fe 2+ 、Co 2+ , Cu2+ and Ni 2+ More preferably, the B ions include Pb 2+ and Sn 2+ One or both of the following.

[0147] Optionally, the C ions include Cs + 、Ag + , K + And Ru + At least one of .

[0148] Optionally, the D ions include Bi 3+ 、Ni 3+ , Fe 3+ and Cu 3+ At least one of;

[0149] Optionally, the X ions include fluoride ions (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), thiocyanate ion (SCN - ) at least one; Optionally, the X ions include Cl - Br - and I - At least one of .

[0150] It is understood that the perovskite material in the above perovskite light absorbing layer can be selected from CsFAPbX 3 , CsMAPbX 3 、CsFAMAPbX 3 、CsPbX 3 ,MAPbX 3 , FAPbX 3 、CsFAPbSnX 3 、CsMAPbSnX 3 、CsFAMAPbSnX 3 、CsPbSnX 3 MAPbSnX 3 and FAPbSnX 3 Further, as an example, the perovskite material in the perovskite light absorbing layer may be selected from CsFAPbI 3 , CsPbI 3 , FAPbI 3 At least one of .

[0151] In some examples, the method for preparing the perovskite light absorbing layer comprises the following steps: 2The perovskite precursor solution is mixed with a solvent to obtain a perovskite precursor solution; the perovskite precursor solution is then coated on a corresponding substrate and annealed to obtain a perovskite light-absorbing layer.

[0152] The first electrode layer 121 includes at least one of conductive metal oxides such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), etc. Further, the resistivity of the first electrode layer 121 is 4-30Ωcm.

[0153] Furthermore, in order to effectively transmit light to the light absorbing layer 122, the first electrode layer 121 in the solar cell 1 is set as a transparent electrode, and the second electrode layer 123 is set as a back electrode. Furthermore, the first electrode layer 121 and the substrate 110 form a transparent conductive glass, such as ITO glass, FTO glass, AZO glass, GZO glass.

[0154] The material of the second electrode layer 123 (i.e., the material of the back electrode) includes one or more of metal materials, carbon materials, and conductive metal oxides. Among them, the metal material includes one or more of gold, silver, titanium, copper, and aluminum; the carbon material includes one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; the conductive metal oxide includes one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In addition, the second electrode layer 123 can also be a multilayer or mixed back electrode formed by a combination of the above three types of materials. The preparation method of the second electrode layer 123 includes one of thermal evaporation, electron beam evaporation (EBD), sputtering, hot wire chemical vapor deposition (HWCVD), atomic layer deposition (ALD), physical vapor deposition (PVD), active plasma deposition (RPD), doctor blading, and slot die.

[0155] It can be understood that the solar cell includes a regular structure and a trans structure in terms of structure.

[0156] For a formal structure, as a non-limiting example, see Figure 2 The photovoltaic structure 120 of the solar cell 1 includes a substrate 110 and a first electrode layer 121, a first transport layer 124 (electron transport layer), a light absorption layer 122, a second transport layer 125 (hole transport layer) and a second electrode layer 123 which are sequentially stacked on the substrate 110. The first electrode layer 121 is a transparent electrode and the second electrode layer 123 is a back electrode.

[0157] For the trans structure, as a non-limiting example, see Figure 2The photovoltaic structure 120 of the solar cell 1 includes a substrate 110 and a first electrode layer 121, a first transport layer 124 (hole transport layer), a light absorption layer 122, a second transport layer 125 (electron transport layer) and a second electrode layer 123 which are sequentially stacked on the substrate 110. The first electrode layer 121 is a transparent electrode and the second electrode layer 123 is a back electrode.

[0158] Specifically, as an example, the solar cell has a transverse structure, and its preparation method includes the following steps:

[0159] Step 1: Etching and cleaning the transparent electrode and drying;

[0160] Step 2: Carry out P1 line drawing on the transparent electrode, penetrating the transparent conductive layer;

[0161] Step 3: sequentially preparing a hole transport layer on the transparent electrode;

[0162] Step 4: preparing a perovskite light absorbing layer on the hole transport layer;

[0163] Step 5: preparing an electron transport layer on the perovskite light absorbing layer;

[0164] Step 6: Perform P2 scribing, where the P2 scribing runs through the electron transport layer, the titanium ore light absorption layer and the hole transport layer;

[0165] Step 7: preparing a back electrode layer on the electron transport layer;

[0166] Step 8: Perform P3 scribing, where the P3 scribing runs through the back electrode layer, the electron transport layer, the titanium ore light absorption layer and the hole transport layer.

[0167] It is understandable that when the solar cell is formal, its preparation order is slightly different, that is, the electron transport layer is prepared first, and the hole transport layer is prepared later, and it can be slightly adjusted according to its structure.

[0168] Optionally, the solar cell may further include an electron blocking layer between the electrode layer and the hole transport layer. The material of the electron blocking layer may be a known material.

[0169] Optionally, the solar cell may further include a hole blocking layer between the electrode layer and the electron transport layer. The material of the hole blocking layer may include but is not limited to BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), SnO 2 , IWO, etc.

[0170] It is understandable that an interface layer may or may not be used between the interfaces of adjacent film layers of the photovoltaic structure according to actual design.

[0171] Another embodiment of the present application provides a method for preparing the above-mentioned solar cell, comprising the following steps:

[0172] Preparing a photovoltaic structure including a first electrode layer, a light absorbing layer and a second electrode layer stacked in sequence on a substrate;

[0173] Clearing the photovoltaic structure at the position where the first insulating layer is required to be set on the substrate;

[0174] The bus structure and the packaging layer are formed on the substrate from which the photovoltaic structure is removed and on the second electrode layer.

[0175] The solar cell can be prepared according to the above preparation method, and its specific implementation method is not limited. According to the difference of each film layer, for example, spraying method, sputtering method, vapor deposition method and other methods can be selectively adopted, and means that can be implemented by those skilled in the art can be adopted.

[0176] Furthermore, the vapor deposition method includes at least one of chemical vapor deposition, physical vapor deposition and plasma vapor deposition. Furthermore, chemical vapor deposition is a method of generating a thin film by chemically reacting one or more gaseous compounds or single substances containing thin film elements on the surface of a substrate, including thermal CVD, plasma chemical vapor deposition (PCVD) and laser CVD (LCVD). Physical vapor deposition refers to a technology that uses physical methods to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionizes it into ions under vacuum conditions, and deposits a thin film with a certain special function on the surface of a substrate through a low-pressure gas (or plasma) process, including: vacuum evaporation, sputtering, arc plasma coating, ion plating and molecular beam epitaxy.

[0177] An embodiment of the present application further provides a photovoltaic module, which includes the above-mentioned solar cell.

[0178] The solar cell has high light conversion efficiency and good stability, and can improve the efficiency of photovoltaic modules.

[0179] The photovoltaic module includes one or more of the above-mentioned solar cells, which can be selected according to the specific application scenario; further, the photovoltaic module includes a plurality of the above-mentioned solar cells, and the plurality of the above-mentioned solar cells are connected in series or in parallel to form a battery cell. Further, the photovoltaic module may also include a laminated battery, and the laminated battery includes one or more of the above-mentioned solar cells. Among them, the laminated battery includes but is not limited to crystalline silicon / perovskite laminated battery, full perovskite laminated battery, copper indium gallium selenide and other thin film batteries / perovskite laminated batteries.

[0180] In some of the embodiments, the photovoltaic module further includes a photovoltaic glass layer, a bonding layer and a back sheet.

[0181] Adhesive layers are respectively arranged on the two surfaces of the solar cell, a back plate is arranged on the surface of one of the adhesive layers away from the solar cell, and a photovoltaic glass layer is arranged on the surface of the other adhesive layer away from the solar cell.

[0182] The photovoltaic glass layer and the back panel are used to protect the solar cells, and they have the functions of sealing, insulation and waterproofing; the bonding layer plays the role of bonding the photovoltaic glass layer to the battery cell, and bonding the back panel to the battery cell.

[0183] Optionally, the photovoltaic glass layer is made of tempered glass, the back panel is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0184] Furthermore, the photovoltaic assembly further comprises a junction box and an outer frame. Furthermore, the lead-out end of the current collector of the solar cell is connected to the junction box.

[0185] The junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.

[0186] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0187] Furthermore, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone. The photovoltaic module can convert solar energy into electrical energy, or send it to a battery for storage, or drive a load to work.

[0188] In some embodiments, the photovoltaic component is a solar panel.

[0189] An embodiment of the present application further provides a photovoltaic system, comprising the above-mentioned photovoltaic module.

[0190] The photovoltaic system utilizes the photovoltaic effect of the solar cells in the photovoltaic modules to directly convert solar radiation energy into electrical energy with high efficiency; further, the photovoltaic system is a photovoltaic power generation system.

[0191] Photovoltaic modules are the core part of photovoltaic power generation systems. The above photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios; further, when the above photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0192] The above photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0193] An independent photovoltaic power generation system includes a photovoltaic array, a battery pack, a charging controller, a power electronic converter (inverter), a load, etc. Its working principle is that the solar radiation energy is first converted into electrical energy through the photovoltaic array, and then converted by the power electronic converter to supply power to the load. At the same time, the excess electrical energy is stored in the energy storage device in the form of chemical energy after passing through the charging controller. In this way, when the sunshine is insufficient, the energy stored in the battery can be converted into AC 220V, 50 Hz electrical energy for use by the AC load after being stepped up by the power electronic inverter, filtering and power frequency transformer.

[0194] The grid-connected photovoltaic power generation system includes photovoltaic arrays, high-frequency DC / DC boost circuits, power electronic converters (inverters) and system monitoring. Its working principle is that the solar radiation energy is converted by the photovoltaic array, and then converted by high-frequency DC to high-voltage DC, and then inverted by the power electronic inverter to output a sinusoidal AC current with the same frequency as the grid voltage to the grid.

[0195] The above two photovoltaic power generation systems have their own characteristics and can be selected according to specific application scenarios.

[0196] One embodiment of the present application provides an electrical device, including the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0197] In some of the embodiments, the solar cell or photovoltaic module can be used as a power source for an electrical device, or can be used as an energy storage unit for an electrical device.

[0198] Furthermore, the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, etc., electric vehicles, electric trains, ships and satellites, etc., but are not limited thereto.

[0199] Figure 3 The power consumption device 2 is used as an example. The power consumption device 2 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0200] One embodiment of the present application provides a power generation device, including the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0201] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in conjunction with the embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0202] If no specific techniques or conditions are specified in the examples, the techniques or conditions described in the literature in the field or the product instructions are used. If no manufacturer is specified for the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0203] Example 1

[0204] The preparation of perovskite solar cells includes the following steps:

[0205] (1) Preparation of the substrate 110 containing the first electrode layer. A 500 nm thick FTO conductive layer was sputtered on a 2.2 mm thick float low sodium high transmittance glass, which was then washed twice with acetone and isopropanol, immersed in deionized water for ultrasonic treatment for 20 min, dried in a forced air drying oven, and cooled at room temperature for 5 min to obtain a clean 1 m × 2 m FTO conductive glass.

[0206] (2) P1 scribing. P1 scribing was performed on the FTO conductive glass by laser cutting. The number of P1 scribing lines was 163. The width of the P1 scribing lines was 10 μm, and the spacing between the P1 scribing lines was 5.95 mm.

[0207] (3) Preparation of hole transport layer, perovskite layer and electron transport layer.

[0208] A nickel oxide hole transport layer with a thickness of 20 nm was prepared by magnetron sputtering; then 1.2 mol / L Cs 0.05 FA 0.95 PbI 3 The perovskite precursor solution, in which the solvent is N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP) in a volume ratio of 6:1, is slit coated on the nickel oxide hole transport layer, and subjected to negative pressure treatment for 50 seconds to volatilize part of the solvent, and then annealed on a 150°C hot stage for 10 minutes to obtain a Cs with a thickness of 500 nm. 0.05 FA 0.95 PbI 3 Perovskite layer; Finally, in a vacuum chamber (<1×10 -4 A C60 electron transport layer with a thickness of 20 nm is deposited on the perovskite layer by thermal evaporation at a rate of 0.1 A / s.

[0209] (4) P2 scribing. P2 scribing is performed by laser cutting. The P2 scribing runs through the electron transport layer, the titanium ore light absorption layer and the hole transport layer. The number of P2 scribing lines is 163. The width of the P2 scribing line is 60 μm, and the spacing between the P2 scribing line and the P1 scribing line is 20 μm.

[0210] (5) Preparation of the second electrode layer: 100 nm of copper was evaporated in a vacuum evaporation device at a rate of 0.1 A / s.

[0211] (6) P3 scribing. After the evaporation is completed, P3 scribing is performed. The P3 scribing runs through the back electrode layer, the electron transport layer, the titanium ore light absorption layer and the hole transport layer to obtain a complete photovoltaic structure 120 of the perovskite cell. The number of P3 scribing lines is 163; the width of the P3 scribing lines is 10 μm, and the spacing between the P3 scribing lines and the P2 scribing lines is 20 μm.

[0212] (7) P4 scribing and packaging. When scribing P4, laser is used to divide the effective area. The effective area is as follows: Figure 4 As shown, P4 divides the effective area into two parallel partitions, and the lead-out hole is located between the two parallel partitions; a laser edge cleaning machine is used to remove the photovoltaic structure on the four sides and under the lead-out hole, as shown in FIG. Figure 5 As shown, the width below the lead-out hole is the largest, which is suitable for the case where the lead-out hole of the package layer is in the middle (such as Figure 8 As shown, the lead-out hole is located at the position of the lead-out end 1313, which is located in the middle of the photovoltaic structure 120 and between the two partitions formed by P4). Then encapsulation is performed.

[0213] Among them, the distance a between the P4 lines on both sides of the positive and negative electrodes and the edges on both sides is 12mm, the distance b between the outermost P4 lines (P41 or P42) and their respective outermost edges in the distribution direction of the two partitions is 12.25mm, and the distance w between the two middle P4 lines at the lead-out hole (i.e., between P43 and P44) is x 1 +φ+x 2 =7.6mm+7mm+7.6mm=22.2mm, with the lead hole as the center, a rectangle with a width of 22.2mm×length of 1000mm is drawn. The depth h of the lead hole is 3.2mm; the hole diameter φ of the lead hole is 7mm, and the distance x between the hole wall closest to the P43 line and the P43 line is 1 The distance x between the hole wall closest to the P44 line and the P44 line 2 Equal, x 1 =x 2 =7.6mm. x=x 1 =x 2 =7.6mm, the shortest penetration distance L is extended to 10.8mm, L=x+h=7.6mm+3.2mm=10.8mm).

[0214] The packaging operation in step (7) includes the following steps.

[0215] (7.1) First layer of butyl rubber strip: First, use the encapsulation layer cover plate to find the projection points of the two lead-out holes on the encapsulation layer on the photovoltaic structure 120 (located near the middle), and first lay the first layer of butyl rubber strip (PIB rubber strip) 1321 on the substrate parallel to the bottom edge with the lead-out hole projection point as the center, such as Figure 6 As shown, the first layer of butyl rubber strip (PIB rubber strip) 1321 is located between the P43 and P44 lines.

[0216] (7.2) Busbar: A longitudinal busbar (i.e., the first main body 1311) is attached to each of the positive and negative electrodes, extending to the first butyl rubber strip 1321 with a thickness of 0.4 mm and overlapping a section to the end, such as Figure 7 One side of the transverse busbar overlaps with the longitudinal busbar, and the lead-out end 1313 on the other side is used to extend from the lead-out hole to the junction box for welding, such as Figure 8 As shown; each sub-battery in the sub-photovoltaic structure separated by the first layer of butyl rubber strip is connected in series, and the two sub-photovoltaic structures are connected in parallel, forming a circuit that is first connected in series and then in parallel, as shown in FIG. Fig. 9 shown.

[0217] (7.3) Second layer of butyl rubber strip: The second layer of butyl rubber strip 1322 is punched with a hole centered at the projection point, and the busbar to be welded is passed through the hole, so that the first layer of butyl rubber strip 1321 and the second layer of butyl rubber strip 1322 perfectly overlap to form a structure of a double layer of butyl rubber strip sandwiching the second main body 1312, as shown in FIG. Fig.11 shown.

[0218] (7.4) Buffer film: A buffer film 150 is covered on the second electrode layer 123 of the photovoltaic structure 120, and the material thereof is TPO, such as Fig.12 shown.

[0219] (7.5) Edge-sealing butyl rubber strip: The edge-sealing butyl rubber strip 160 for edge sealing is laid around the substrate, and forms a four-corner overlap pattern with the double-layer butyl rubber strip, such as Fig.13 shown.

[0220] (7.6) Encapsulation layer: Cover the surface with a piece of perforated tempered glass of the same size as the encapsulation layer (i.e., cover plate), and try to fit it as neatly as possible to avoid breakage during lamination.

[0221] (7.7) Lamination: Place the solar cell in a laminator and set the parameters (lamination temperature 110°C, vacuum pressure holding 550s) to complete the lamination operation. During the lamination process, the edge-sealing butyl rubber strip 160 and the double-layer butyl rubber strip melt to form a whole and fill the edge-clearing area. The cross-sectional structure of the solar cell is as follows: Figure 1 and Figure 2 shown.

[0222] (8) Junction box: Apply adhesive around the bottom of the junction box and then install the junction box onto the cover glass.

[0223] (9) Welding: At a high temperature of 410°C, use rosin and tin bars to connect the copper strip to the positive and negative poles of the junction box.

[0224] (10) Silicone gel: Finally, use a glue gun to inject silicone gel into the junction box. After the glue is completely cured, you can buckle the top cover.

[0225] Example 2

[0226] It is basically the same as Example 1, except that the line clearing parameters in step (7) are different, as follows: the distance w between the two middle P4 lines at the lead-out hole is x 1 +φ+x 2 =6.8mm+7mm+6.8mm=20.6mm, with the lead hole as the center, a rectangle with a width of 20.6mm×length of 1000mm is drawn. The depth h of the lead hole is 3.2mm; the diameter φ of the lead hole is 7mm, and the distance x between the hole wall closest to the P43 line and the P43 line is 1 The distance x between the hole wall closest to the P44 line and the P44 line 2 Equal, x 1 =x 2 =6.8mm. x=x 1 =x 2 =6.8mm, the shortest penetration distance L is extended to 10.0mm, L=x+h=6.8mm+3.2mm=10.0mm.

[0227] Example 3

[0228] It is basically the same as Example 1, except that the line clearing parameters in step (7) are different, as follows: the distance w between the two middle P4 lines at the lead-out hole is x 1 +φ+x 2 =1.8mm+7mm+1.8mm=10.6mm, with the lead hole as the center, a rectangle with a width of 20.6mm×length of 1000mm is drawn. The depth h of the lead hole is 3.2mm; the hole diameter φ of the lead hole is 7mm, and the distance x between the hole wall closest to the P43 line and the P43 line is 1 The distance x between the hole wall closest to the P44 line and the P44 line 2 Equal, x 1 =x 2 =1.8mm. x=x 1 =x 2 =1.8mm, the shortest penetration distance L is extended to 5.0mm, L=x+h=1.8mm+3.2mm=5.0mm.

[0229] Comparative Example 1

[0230] The method is basically the same as Example 1, except that step (7) is different, which is as follows:

[0231] (7) P4 scribing and packaging. When scribing P4, laser is used to divide the effective area. The effective area is as follows: Fig.14 The portion within the P4 scribe line is shown; a laser edge cleaner is used to remove the photovoltaic structure outside the four peripheral P4s, which is suitable for the case where the lead-out hole of the encapsulation layer is located at the edge and above the active area.

[0232] Among them, the distance a between the P4 scribe line on both sides of the positive and negative electrodes and the edges on both sides, and the distance b between the P4 scribe line (P41 or P42) on the other two sides and the outermost edges of their respective corresponding substrates are the same as those in Example 1, and the setting position and aperture size of the lead-out hole in Comparative Example 1 are the same as those in Comparative Example 1. The difference is that in Comparative Example 1, no edge cleaning is performed below the lead-out hole, that is, the edge cleaning area between P43 and P44 in Example 1 is not formed; accordingly, the first layer of butyl rubber strip (PIB rubber strip) 1321 is located above the photovoltaic structure in this area. Since the photovoltaic structure is not cleared below the lead-out hole, a butyl rubber gasket is placed below to plug the hole, so the packaging operations (7.1) and (7.2) in step (7) are slightly different, and the other steps are similar.

[0233] The packaging operation in step (7) includes the following steps.

[0234] (7.1) Busbar: First, use the package layer cover to find the projection points of the two lead-out holes on the package layer on the photovoltaic structure 120, attach a longitudinal busbar to each positive and negative electrode, extend it to the high-temperature insulating tape and overlap it for a while, place a transverse busbar on the high-temperature insulating tape, and overlap one side of the transverse busbar with the longitudinal busbar. The lead-out end on the other side extends from the lead-out hole to the junction box for welding with the projection point as the center (such as Fig.15 as shown).

[0235] (7.2) Butyl rubber gasket: Make a hole in the butyl rubber gasket with the projection point of the lead-out hole on the cover glass as the center, and pass the busbar to be welded through the hole.

[0236] (7.3) Buffer film: A buffer film 150 is covered on the second electrode layer 123 of the photovoltaic structure 120 and is made of TPO.

[0237] (7.4) Edge-sealing butyl rubber strip: A butyl rubber strip 160 is laid around the periphery of the substrate for edge sealing.

[0238] (7.5) Encapsulation layer: Cover the surface with a piece of perforated tempered glass of the same size as the encapsulation layer (i.e., cover plate), and try to fit it as neatly as possible to avoid breakage during lamination.

[0239] (7.6) Hot lamination: Place in a laminator, set parameters (lamination temperature 110°C, vacuum pressure holding 550s), and complete the lamination operation; during the lamination process, the edge-sealing butyl rubber strip 160 melts to form a whole and fills the edge-clearing area, forming a good bond with the substrate glass and the cover glass. At the same time, the butyl rubber gasket under the lead-out hole melts and fills the lead-out hole under pressure. The cross-sectional structure of the obtained solar cell is as follows: Fig.16 shown.

[0240] The main difference between Comparative Example 1 and Example 1 in structure is that in Comparative Example 1, a photovoltaic structure including a light absorbing layer 122 is provided below the lead-out hole (ie, directly below the lead-out end 1313 of the busbar 131 ).

[0241] The following is a performance test.

[0242] (1) IV test: Use AAA-level solar simulator as light source and high-precision source meter as test equipment. The voltage sweep range is from -0.5V to 48V. The data acquisition delay is 20ms. Collect current and voltage data. The program uses voltage as the horizontal axis and current as the vertical axis to draw an IV curve. The horizontal intercept is the open circuit voltage Voc, and the vertical intercept is the short circuit current Jsc. The product of I and V on the IV curve is the power under the corresponding load. The ratio of the maximum power to the irradiation power of the solar simulator is the efficiency PCE. Take the average of multiple data under the same experimental conditions.

[0243] (2) PL test: Photoluminescence (PL) test: Place the module on a photoluminescence imaging device, use 502nm light as the excitation light to illuminate the component, and use a dedicated camera to collect 700~900nm photoluminescence intensity imaging on a 2D plane.

[0244] (4) EL test: Electroluminescent (EL) test: Place the module on the electroluminescent imaging device, connect the positive and negative wires to the interface on the device, adjust the source meter, input 300mA of external current at 44V, and use a dedicated camera to collect 700~900nm photoluminescence intensity imaging on a 2D plane.

[0245] (5) UV-TC sequence test: Refer to IEC 61215-2:2021 MQT10. First, place the device in a UV aging box with a temperature controlled at 60°C and an irradiance of 250W / m at 280~400nm. 2The light source was irradiated for 60 hours, and then transferred to the thermal cycle test chamber. According to IEC 61215-2:2021 MQT11, a thermal cycle test was performed from -40℃ to 85℃, with a heating and cooling rate of 1℃ / min, and a stay of 45min at 85℃ and -40℃, for a total of 200 cycles. After being taken out and placed at room temperature for one hour to recover, a visual inspection was performed and the IV, PL, and EL after aging were measured.

[0246] Calculate the photoelectric conversion efficiency loss rate (PCE loss rate) before and after the UV-TC sequence test. The calculation formula is as follows:

[0247] PCE loss rate = (PCE before aging - PCE after aging) / PCE before aging.

[0248] And record the visual inspection results.

[0249] (6) DH test: The perovskite photovoltaic modules obtained in the examples and comparative examples were subjected to IV test to obtain the photoelectric conversion efficiency before the wet heat test.

[0250] After that, the damp heat test (MQT 13) specified in the IEC61215:2021 standard is carried out. The test method is: short-circuit the positive and negative poles of the junction box of the perovskite photovoltaic module, place it in a constant temperature and humidity chamber with a temperature of 85±2℃ and a humidity of 85±5%RH, and set the program control to cool down at 1.5℃ / min every 500h of aging. After about 40min of recovery to room temperature, continue to open the circuit for recovery at 23±5℃ and below 75%RH for 2 hours, conduct visual inspection and take pictures, and measure the IV test, PL imaging test, and EL imaging test after aging. Then put it back and continue aging until the PCE drops below 80% of the initial value and the component is found to be abnormally yellowed by visual inspection, and the test is stopped. The total aging time when the PCE first drops below 80% of the initial value is recorded as T 80 The total duration of aging when the component first turns yellow is recorded as T 进水 .

[0251] Some parameters of the comparative examples and embodiments are shown in Table 1. The shortest penetration distance L = x + h, where x is the distance between the hole wall closest to the P43 line and the P43 line. 1 The distance x between the hole wall closest to the P44 line and the P44 line 2 The smaller of the two P4 lines (i.e., P43 and P44) at the lead-out hole, h is the depth of the lead-out hole, and w is the distance between the two middle P4 lines at the lead-out hole (i.e., between P43 and P44), i.e., the width of the clear edge below the lead-out hole.

[0252] The edge cleaning area, UV-TC sequence test and DH test results of each comparative example and embodiment are shown in Table 2.

[0253] Table 1

[0254]

[0255] Table 2

[0256]

[0257] It should be noted that the lead-out hole in Comparative Example 1 is located above the photovoltaic structure. Since a photovoltaic structure is provided below the lead-out hole, the water and oxygen intrusion path in the thickness direction may also affect its performance. By observing the test results, it can be found that all embodiments showed no abnormalities in the UV-TC sequence test. However, the PCE loss of Comparative Example 1 is too high, and visual inspection shows yellowing under the lead-out hole. At the same time, PL imaging shows darkening and EL imaging shows brightening, which indicates that there is some perovskite degradation and local short circuit here. It proves that the stress formed by the internal gasket solution leads to short circuit and degradation. At the same time, in the DH test, the T of Comparative Example 1 进水 With T 80 They are all the smallest, which may be related to its shortest penetration distance of only 3.2mm.

[0258] Compared with Comparative Example 1, each embodiment suppresses the negative impact of internal stress by performing edge cleaning of a width w below the lead-out hole, and sets an insulating layer at the edge cleaning position to increase the shortest penetration distance L, thereby improving the water blocking ability and thus improving the device stability of the solar cell and the stability of its photoelectric performance.

[0259] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0260] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A solar cell, characterized in that: include: substrate; A photovoltaic structure, the photovoltaic structure comprising a first electrode layer, a light absorbing layer, and a second electrode layer stacked in sequence on the substrate; A bus structure, wherein the photovoltaic structure and the bus structure are located on the same side of the substrate, the bus structure comprises a bus, a first insulating layer and a second insulating layer, the bus comprises a first main body, a second main body and a lead-out terminal connected in sequence, the first main body is connected to the second electrode layer, the first insulating layer is wrapped around the outer surface of the second main body and is located on the substrate, the first insulating layer divides the photovoltaic structure into two partitions, the two partitions are respectively located on both sides of the first insulating layer, the two partitions are connected through the first main body, the lead-out terminal comprises a connected built-in segment and an external segment, and the second insulating layer is wrapped around the built-in segment of the lead-out terminal; and An encapsulation layer, wherein the encapsulation layer and the substrate cooperate to form an encapsulation structure, the photovoltaic structure is located within the encapsulation structure, a lead-out hole is provided on the encapsulation layer, the internal section of the lead-out terminal is located in the lead-out hole, and the external section of the lead-out terminal is located outside the encapsulation layer; A projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is located within a projection of the first insulating layer on the substrate along the thickness direction of the photovoltaic structure.

2. The solar cell according to claim 1, characterized in that: The two partitions are connected in series or in parallel via the first main body.

3. The solar cell according to claim 2, characterized in that: A projection area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is smaller than a projection area of ​​the first insulating layer on the substrate along the thickness direction of the photovoltaic structure.

4. The solar cell according to claim 3, characterized in that: In a transverse plane perpendicular to the thickness direction of the photovoltaic structure, the shortest distance between the edge of the first insulating layer and the hole wall of the lead-out hole is x, where x>0.

5. The solar cell according to claim 4, characterized in that The depth of the lead-out hole is h, and x and h satisfy the following condition: x+h≥5mm.

6. The solar cell according to claim 5, characterized in that: One or more of the following conditions are met: (1) 2mm≤h≤10mm; (2) 3mm≤x≤40mm.

7. The solar cell according to claim 5, characterized in that: 10mm≤x+h≤50mm.

8. The solar cell according to claim 5, characterized in that: One or more of the following conditions are met: (1) 2mm≤h≤5mm; (2) 3mm≤x≤8mm; (3) 10mm≤x+h≤13mm.

9. The solar cell according to any one of claims 1 to 8, characterized in that: The first insulating layer is connected to the substrate and the packaging layer respectively.

10. The solar cell according to any one of claims 1 to 8, characterized in that: One or more of the following conditions are met: (1) The total thickness of the first insulating layer is 0.20 mm to 0.80 mm; (2) The thickness of the second main body is 0.03 mm to 0.25 mm.

11. The solar cell according to any one of claims 1 to 8, characterized in that: The photovoltaic structure includes a plurality of sub-cells arranged in sequence in a first direction, and the first insulating layer is arranged along the first direction; and further satisfies one or more of the following conditions: (1) The length of the first insulating layer in the first direction is ≥ the total length of the plurality of sub-cells in the first direction; (2) A width of the first insulating layer in a direction perpendicular to the first direction is less than a length of the first insulating layer in the first direction.

12. The solar cell according to claim 11, characterized in that: When the distances between the two edges of the first insulating layer in a direction perpendicular to the first direction and the hole walls of the lead-out hole are equal, the width w of the first insulating layer in a direction perpendicular to the first direction, the aperture φ of the lead-out hole, and the depth h of the lead-out hole satisfy the following condition: (w-φ) / 2+h≥10mm.

13. The solar cell according to any one of claims 1 to 8, characterized in that: The first insulating layer and the second insulating layer independently include one or more of a butyl adhesive layer, a polyisoprene layer, a TPO hot melt adhesive layer, a glass melt layer and a polyolefin elastomer hot melt adhesive layer.

14. The solar cell according to any one of claims 1 to 8, characterized in that: The bus structure also includes a third insulating layer, which is arranged on the surface of the encapsulation layer away from the substrate and around the lead-out end, and the projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is within the projection of the third insulating layer on the substrate along the thickness direction of the photovoltaic structure.

15. The solar cell according to claim 14, characterized in that: A projection area of ​​the third insulating layer on the substrate along the thickness direction of the photovoltaic structure is larger than a projection area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure.

16. The solar cell according to any one of claims 1 to 8, characterized in that: The solar cell comprises at least two current collectors, and the first main bodies of the at least two current collectors are respectively connected to the positive electrode and the negative electrode of the photovoltaic structure.

17. The solar cell according to any one of claims 1 to 8, characterized in that: The light absorbing layer includes a perovskite light absorbing layer.

18. A photovoltaic module, characterized in that: Comprising the solar cell according to any one of claims 1 to 17.

19. An electrical device, characterized in that: The method comprises at least one selected from the solar cell according to any one of claims 1 to 17 and the photovoltaic module according to claim 18.

20. A power generation device, characterized in that: The method comprises at least one selected from the solar cell according to any one of claims 1 to 17 and the photovoltaic module according to claim 18.

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