Large rectification device for high crystalline silicon

Abstract

The utility model discloses a large rectification device for high crystalline silicon, which relates to the technical field of high crystalline silicon purification and comprises a base, an evaporation component and a separation component. When high-crystalline silicon needs to be rectified, a silicon raw material is placed in the evaporation part, gas in the gas storage box is pumped into the evaporation part through the gas pump, the evaporation part starts to work, the temperature is raised, the silicon raw material is heated from a solid state to a gas state, then the gas-state silicon raw material can reach the separation tower through the condenser, and at the moment, the gas-state silicon raw material is separated from the separation tower. The condenser does not work, so that the separation tower can separate impurities in the silicon steam, the silicon steam is separated from the impurities, then multiple processes are carried out after cooling until the impurities are completely separated, the silicon is heated into a gas state again, the process is repeated in cooperation with gas, but the condenser needs to be opened, and when the gas-state silicon is cooled, the gas-state silicon is cooled. And the liquid flows to a separation tower, and then is subjected to cooling crystallization in the separation tower.

Description

Technical Field

[0001] The utility model relates to the technical field of high-purity silicon purification, and particularly relates to a large-scale rectification device for high-purity silicon. Background Art

[0002] The main component element of high-purity silicon (high-purity silicon) is silicon, and its purity is usually above 99.9999%. High-purity silicon is mainly used in the semiconductor industry, especially for making integrated circuits and solar cells, etc.

[0003] High-purity silicon has good semiconductor properties and can be used to manufacture various semiconductor devices. High-purity silicon is one of the main materials for solar cells and has a high photoelectric conversion efficiency. High-purity silicon can be used to manufacture the core material of optical fibers to improve the transmission speed and stability of optical fibers. High-purity silicon can be used to manufacture microelectronic devices, such as integrated circuits, sensors, etc., to promote the development of electronic products. High-purity silicon can be used to manufacture optoelectronic displays such as liquid crystal displays and organic light-emitting diodes (OLEDs). High-purity silicon can be used to manufacture high-performance energy storage devices such as lithium batteries and sodium batteries, etc.

[0004] In order to save resources and manufacturing costs, many manufacturers will use recycled materials containing high-precision silicon to rectify high-purity silicon, which not only saves costs but also is beneficial to environmental protection. However, when manufacturing high-purity silicon, there will be too many impurities in the high-purity silicon, and some impurities need to be separated under specific temperature conditions, resulting in a slow purification efficiency, so that many of the purified high-purity silicon do not meet the requirements, which in turn leads to a decrease in work efficiency and unqualified product quality. Summary of the Invention

[0005] The purpose of the utility model is to provide a large-scale rectification device for high-purity silicon to solve the problems put forward in the above background art.

[0006] To solve the above technical problems, the technical solution adopted by the utility model is:

[0007] A large-scale rectification device for high-purity silicon includes a base, an evaporation component for evaporating silicon raw materials is connected above the base, a separation component for separating silicon crystals is connected above the base, a first support and a second support for supporting the evaporation component and the separation component are respectively arranged on the base, the first support and the second support are fixedly connected, a gas storage tank is fixedly connected to one end of the base, an air pump is fixedly connected to the base, and the air pump is connected to the gas storage tank and the evaporation component respectively through air pipes.

[0008] When high-crystalline silicon needs to be distilled, the silicon raw material is placed in the evaporation component, and then the gas inside the gas storage box is pumped into the evaporation component through an air pump. The evaporation component then starts working, raising the temperature to heat the silicon raw material from solid to gaseous. The gaseous silicon raw material then passes through the condenser to the separation tower. At this time, the condenser does not work, allowing the separation tower to separate the impurities in the silicon vapor, thereby separating the impurities from the silicon vapor. After cooling, multiple processes are performed until the impurities are completely separated. At this time, the silicon is reheated into a gaseous state, and the process is repeated with the gas, but the condenser must be opened. When the gaseous silicon is cooled, it will be converted into a liquid state and flow to the separation tower, and then the cooling and crystallization process will be carried out in the separation tower.

[0009] A further improvement of the technical solution of the utility model is that the evaporation component includes a distillation tank, the distillation tank is fixedly connected to the first bracket, an air inlet is arranged on the outer side of the distillation tank, the air inlet is fixedly connected to the air pipe, a support net is fixedly connected inside the distillation tank, a heating device is fixedly connected below the distillation tank, a tank cover is connected above the distillation tank, the tank cover is fixedly connected to the distillation tank by bolts, a pipeline is connected above the tank cover, a valve is fixedly connected on the pipeline, a condenser is fixedly connected on the base, an air inlet end and an exhaust end are opened on the condenser, the other end of the pipeline is fixedly connected to the water inlet of the condenser, a pressure gauge and a thermometer are respectively fixedly connected on the tank cover, and the gas in the gas storage box is argon.

[0010] The above technical solution is adopted. In this solution, when the evaporation part starts to work, the tank cover is opened, the silicon raw material is placed on the support net, the distillation tank is heated by the heating device, and then the air pump starts to extract argon from the gas storage box and transport it to the distillation tank, because argon is a rare gas, which is colorless, odorless and non-toxic at room temperature. The thermal conductivity (thermal conductivity coefficient) of argon is about 380 joules per meter per Kelvin / (meter·Kelvin). This means that argon can transfer heat quickly. At the same time, argon has stable chemical properties and is not easy to react chemically with other substances at high temperatures. Therefore, as a heating medium, argon can effectively improve the distillation efficiency of silicon. When heated to the appropriate temperature and pressure, the silicon raw material will flow into the separation component through the pipeline and condenser. At this time, the separation component starts to work, separates the impurities in the silicon raw material, and then cools it. The impurities can be separated by repeating this process several times. Then, when extracting silicon element, the condenser needs to work in cooperation, so that the silicon is first converted into gas, and then passes through the condenser together with argon. At this time, the gaseous silicon is converted into liquid silicon, and then flows into the separation component for cooling. The argon will flow into the gas storage tank for recycling. This not only improves work efficiency, but also saves investment costs.

[0011] A further improvement of the technical solution of the present utility model lies in that: the separation component includes a separation tower, the separation tower is fixedly connected to the second bracket, an exhaust port is provided on the outer side of the separation tower, the exhaust port is connected to a gas storage tank through a gas pipe, a check valve is fixedly connected at the exhaust port, a pipe is fixedly connected to the top of the separation tower, and the other end of the pipe is fixedly connected to the exhaust end of the condenser. A filter screen and an adsorption disc are respectively arranged inside the separation tower. Handles are arranged on one side of the filter screen and the adsorption disc. The filter screen and the adsorption disc are respectively slidably connected to the separation tower. A plurality of buckle components are connected to the separation tower, and the separation tower is fixed to the filter screen and the adsorption disc through the buckle components.

[0012] With the above technical solution, in this solution, when the silicon vapor enters the inside of the separation tower, the filter screen and the adsorption disc inside the separation tower can adsorb the impurities contained in the silicon vapor. When the silicon is finally cooled, most of the impurities contained therein can be removed. By repeating this step, the impurities existing in the silicon vapor can be removed. Finally, under the action of the condenser, the gaseous silicon is converted into liquid silicon, and then flows into the separation tower for cooling and crystallization, while the argon gas will return to the exhaust pipe through the exhaust port and the pipe provided on the cooling tower for cyclic operation. Because a check valve is provided at the pipe, the argon gas can only flow unidirectionally and will not flow back, thus avoiding the situation of reducing the working efficiency.

[0013] A further improvement of the technical solution of the present utility model lies in that: the buckle component includes a housing, a slider is arranged inside the housing, a spring is arranged between the housing and the slider, one end of the spring is fixedly connected to the housing, the other end of the spring is fixedly connected to the slider, and inclined surfaces are symmetrically arranged at the end of the slider away from the spring.

[0014] With the above technical solution, in this solution, when it is necessary to slide the filter screen and the adsorption disc, at this time, the bottom of the filter screen will apply pressure to the inclined surface on the side of the slider, causing the slider to move inward, thereby compressing the spring. The spring will apply a force opposite to the pressure to the slider under the action of the elastic force, so that the slider will immediately pop out when it encounters the bayonet under the filter screen or the adsorption disc, thus achieving the fixing effect. The inclined surfaces are arranged on both sides of the slider to more conveniently extract and fix the filter screen.

[0015] A further improvement of the technical solution of the present utility model lies in that: a check valve is fixedly connected at the connection between the pipe and the tank cover.

[0016] With the above technical solution, a check valve is fixedly connected at the connection between the pipeline and the tank cover. This is to ensure the unidirectional flow of gas and prevent the occurrence of backflow. Backflow refers to the reverse flow of gas in the pipeline, which leads to a reduction in work efficiency and may even cause safety problems. The working principle of the check valve is to control the flow direction of gas by opening and closing the valve. When gas flows from one end of the pipeline to the other end, the check valve will open and allow the gas to pass through. However, when the gas attempts to flow back from the other end, the check valve will close to prevent the backflow, thus ensuring the normal operation and safety of the pipeline system.

[0017] A further improvement of the technical solution of the present utility model lies in that: the inclined surface provided on the slider is smooth.

[0018] With the above technical solution, the reason for setting the inclined surface on the slider to be smooth is to reduce the frictional force during operation. Because during the sliding process, the frictional force between the slider and the bottom of the filter screen will hinder their movement, thus affecting the performance and efficiency of the device. The setting of the inclined surface can change the contact mode between the sliders, making the pressure distribution between them more uniform, thereby reducing the frictional force. In addition, the smooth inclined surface can further reduce the frictional force because the smooth surface can reduce the friction coefficient, making the contact between the sliders smoother.

[0019] A further improvement of the technical solution of the present utility model lies in that: a number of universal wheels are fixedly connected and arranged evenly below the base.

[0020] With the above technical solution, a number of universal wheels are arranged below the base to ensure that the device is more convenient to move. The design and arrangement of these universal wheels are aimed at providing the best mobility. To ensure the stability and durability of the device on various ground surfaces. These universal wheels have good load-bearing capacity and flexible steering performance, and can easily cope with various complex terrains and environments.

[0021] Due to the adoption of the above technical solution, the technical progress achieved by the present utility model compared with the prior art is:

[0022] 1. The present utility model provides a large-scale rectification device for high-purity silicon. A check valve is fixedly connected at the connection between the pipeline and the tank cover. This is to ensure the unidirectional flow of gas and prevent the occurrence of backflow. Backflow refers to the reverse flow of gas in the pipeline, which leads to a reduction in work efficiency and may even cause safety problems. The working principle of the check valve is to control the flow direction of gas by opening and closing the valve. When gas flows from one end of the pipeline to the other end, the check valve will open and allow the gas to pass through. However, when the gas attempts to flow back from the other end, the check valve will close to prevent the backflow, thus ensuring the normal operation and safety of the pipeline system.

[0023] 2. The present utility model provides a large-scale rectification device for high-purity silicon. The smooth surface of the inclined plane on the slider is to reduce the frictional force during operation. Because during the sliding process, the frictional force between the slider and the bottom of the filter screen will hinder their movement, thus affecting the performance and efficiency of the device. The setting of the inclined plane can change the contact mode between the sliders, making the pressure distribution between them more uniform, thereby reducing the frictional force. In addition, the smooth surface of the inclined plane can further reduce the frictional force because the smooth surface can reduce the friction coefficient, making the contact between the sliders smoother.

[0024] 3. The present utility model provides a large-scale rectification device for high-purity silicon. A number of universal wheels are arranged below the base to ensure that the device is more convenient to move. The design and arrangement of these universal wheels are aimed at providing the best moving performance to ensure the stability and durability of the device on various ground surfaces. These universal wheels have good load-bearing capacity and flexible steering performance, and can easily cope with various complex terrains and environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The present invention will be further described below with reference to the accompanying drawings.

[0026] Figure 1 is the first structural schematic diagram of the present utility model;

[0027] Figure 2 is the second structural schematic diagram of the present utility model;

[0028] Figure 3 is the sectional structural schematic diagram of the present utility model;

[0029] Figure 4 is the structural schematic diagram of the buckle component of the present utility model;

[0030] Figure 5 is the structural schematic diagram of the one-way valve of the present utility model;

[0031] In the figure: 1. Base; 2. First support; 3. Second support; 4. Gas storage tank; 5. Air pump; 6. Air pipe; 7. Rectification tank; 8. Intake port; 9. Support net; 10. Heating device; 11. Tank cover; 12. Bolt; 13. Valve; 14. Condenser; 15. Intake end; 16. Exhaust end; 17. Pressure gauge; 18. Thermometer; 19. Separation tower; 20. Exhaust port; 21. One-way valve; 22. Filter screen; 23. Adsorption disc; 24. Handle; 25. Housing; 26. Spring; 27. Slider; 28. Inclined plane; 29. Universal wheel. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0032] The present utility model will be further described in detail below with reference to the embodiments:

[0033] Embodiment 1

[0034] As shown in Figure 1 , the utility model provides a large-scale rectification device for high-purity silicon, which includes a base 1. An evaporation component for evaporating silicon raw materials is connected above the base 1, and a separation component for separating silicon crystals is connected above the base 1. A first support 2 and a second support 3 for supporting the evaporation component and the separation component are respectively arranged on the base 1. The first support 2 and the second support 3 are fixedly connected. A gas storage tank 4 is fixedly connected to one end of the base 1, and an air pump 5 is fixedly connected to the base 1. The air pump 5 is connected to the gas storage tank 4 and the evaporation component through a trachea 6.

[0035] In this embodiment, when rectifying high-purity silicon, the silicon raw materials are placed in the evaporation component, and then the gas inside the gas storage tank 4 is pumped into the evaporation component through the air pump 5. Then the evaporation component starts to work, raises the temperature, heats the silicon raw materials from solid state to gaseous state. Then the gaseous silicon raw materials will reach the separation tower 19 through the condenser 14. At this time, the condenser 14 does not work, so that the separation tower 19 can separate the impurities in the silicon vapor, thus realizing the separation of impurities from the silicon vapor. Then wait for cooling and perform multiple processes until the impurities are completely separated. At this time, heat the silicon into gaseous state again and repeat this process with gas, but open the condenser 14. When the gaseous silicon meets cold, it will be converted into liquid state and flow to the separation tower 19, and then a cooling crystallization process is carried out in the separation tower 19.

[0036] As shown in Figure 1 , in this embodiment, preferably, the evaporation component includes a rectification tank 7. The rectification tank 7 is fixedly connected to the first support 2. An air inlet 8 is arranged outside the rectification tank 7, and the air inlet 8 is fixedly connected to the trachea 6. A support net 9 is fixedly connected inside the rectification tank 7. A heating device 10 is fixedly connected below the rectification tank 7. A tank cover 11 is connected above the rectification tank 7. The tank cover 11 is fixedly connected to the rectification tank 7 through bolts 12. A pipeline is connected above the tank cover 11, and a valve 13 is fixedly connected to the pipeline. A condenser 14 is fixedly connected to the base 1. An air inlet end 15 and an exhaust end 16 are opened on the condenser 14. The other end of the pipeline is fixedly connected to the water inlet of the condenser 14. A pressure gauge 17 and a thermometer 18 are respectively fixedly connected to the tank cover 11. The gas in the gas storage tank 4 is argon.

[0037] When the evaporation part starts to work, the tank cover 11 is opened, the silicon raw material is placed on the support net 9, the distillation tank 7 is heated by the heating device 10, and then the air pump 5 starts to extract argon gas from the gas storage box 4 and transport it to the distillation tank 7, because argon gas is a rare gas, which is colorless, odorless and non-toxic at room temperature. The thermal conductivity (thermal conductivity coefficient) of argon gas is about 380 joules per meter per Kelvin / (meter·Kelvin). This means that argon can transfer heat quickly. At the same time, argon has stable chemical properties and is not easy to react chemically with other substances at high temperatures. Therefore, as a heating medium, argon can effectively improve the distillation efficiency of silicon. When heated to a suitable temperature and pressure, the silicon raw material will flow into the separation component through the pipeline and condenser 14. At this time, the separation component starts to work, separates the impurities in the silicon raw material, and then cools it. The impurities can be separated by repeating this process several times. Then, when extracting silicon element, the condenser 14 needs to work in cooperation, so that the silicon is first converted into gas, and then passes through the condenser 14 together with the argon. At this time, the gaseous silicon is converted into liquid silicon, and then flows into the separation component for cooling. The argon will flow into the gas storage tank 4 for recycling. This not only improves work efficiency, but also saves investment costs.

[0038] like Figure 2 As shown, preferably, the separation component includes a separation tower 19, which is fixedly connected to the second bracket 3, an exhaust port 20 is opened on the outer side of the separation tower 19, the exhaust port 20 is connected to the air storage box 4 through the air pipe 6, a one-way valve 21 is fixedly connected at the exhaust port 20, a pipeline is fixedly connected to the top of the separation tower 19, the other end of the pipeline is fixedly connected to the exhaust end 16 of the condenser 14, a filter screen 22 and an adsorption plate 23 are respectively provided inside the separation tower 19, a handle 24 is provided on one side of the filter screen 22 and the adsorption plate 23, the filter screen 22 and the adsorption plate 23 are respectively slidably connected to the separation tower 19, a plurality of snap-fit ​​components are connected to the separation tower 19, and the separation tower 19 is fixed to the filter screen 22 and the adsorption plate 23 by snap-fit ​​components.

[0039] When silicon vapor enters the separation tower 19, the filter 22 and adsorption plate 23 inside the separation tower 19 can adsorb the impurities contained in the silicon vapor. When the silicon is cooled, most of the impurities contained therein can be removed. By repeating this step, the impurities in the silicon vapor can be removed. Finally, the gaseous silicon is converted into liquid silicon under the operation of the condenser 14, and then flows into the separation tower 19 for cooling and crystallization, while the argon gas will return to the exhaust pipe 6 through the exhaust port 20 and the pipeline set on the cooling tower for circulation. Because a one-way valve 21 is set at the pipeline, the argon gas can only flow in one direction and will not flow back, thereby reducing the working efficiency.

[0040] like Figure 4As shown, preferably, the separating component includes a separation tower 19, and the buckling component includes a housing 25. A slider 27 is arranged inside the housing 25. A spring 26 is arranged between the housing 25 and the slider 27. One end of the spring 26 is fixedly connected to the housing 25, and the other end of the spring 26 is fixedly connected to the slider 27. The end of the slider 27 away from the spring 26 is symmetrically provided with inclined surfaces 28.

[0041] When it is necessary to slide the filter screen 22 and the adsorption disc 23, at this time, the bottom of the filter screen 22 will apply pressure to the inclined surface 28 on the side of the slider 27, causing the slider 27 to move inward, thereby compressing the spring 26. The spring 26 will apply a force opposite to the pressure to the slider 27 under the action of the elastic force, so that the slider 27 will immediately pop out when it encounters the bayonet under the filter screen 22 or the adsorption disc 23, thereby achieving the fixing effect. The inclined surfaces 28 are arranged on both sides of the slider 27 to more conveniently draw out and fix the filter screen 22.

[0042] Embodiment 2

[0043] As Figure 5 shown, on the basis of Embodiment 1, the present utility model provides a technical solution: preferably, a one-way valve 21 is fixedly connected to the connection part between the pipeline and the tank cover 11.

[0044] In this embodiment, a one-way valve 21 is fixedly connected to the connection part between the pipeline and the tank cover 11. This is to ensure that the gas can flow unidirectionally and prevent the occurrence of backflow. Backflow refers to the reverse flow of gas in the pipeline, which reduces the working efficiency and may even cause safety problems. The working principle of the one-way valve 21 is to control the flow direction of the gas by opening and closing the valve 13. When the gas flows from one end of the pipeline to the other end, the one-way valve 21 will open and allow the gas to pass through. However, when the gas tries to flow back from the other end, the one-way valve 21 will close to prevent the backflow from occurring, thereby ensuring the normal operation and safety of the pipeline system.

[0045] Embodiment 3

[0046] As Figure 4 shown, on the basis of Embodiment 2, the present utility model provides a technical solution: preferably, the surface of the inclined surface 28 provided on the slider 27 is smooth.

[0047] In this embodiment, the surface of the inclined plane 28 on the slider 27 is set to be smooth in order to reduce the frictional force during operation. Because during the sliding process, the frictional force between the slider 27 and the bottom of the filter screen 22 will hinder their movement, thus affecting the performance and efficiency of the device. The setting of the inclined plane 28 can change the contact mode between the sliders 27, making the pressure distribution between them more uniform, thereby reducing the frictional force. In addition, the smooth surface of the inclined plane 28 can further reduce the frictional force, because the smooth surface can reduce the friction coefficient, making the contact between the sliders 27 smoother.

[0048] Embodiment 4

[0049] As Figure 1 shown, on the basis of Embodiment 3, the present utility model provides a technical solution: Preferably, a plurality of universal wheels 29 are fixedly connected and arranged evenly below the base 1.

[0050] In this embodiment, a plurality of universal wheels 29 are arranged below the base 1 to ensure that the device is more convenient to move. The design and arrangement of these universal wheels 29 are aimed at providing the best moving performance. To ensure the stability and durability of the device on various ground surfaces. These universal wheels 29 have good load-bearing capacity and flexible steering performance, and can easily cope with various complex terrains and environments.

[0051] Next, specifically describe the working principle of a large-scale rectification device for high-purity silicon.

[0052] As Figures 1-5As shown, when high-crystalline silicon needs to be distilled, the silicon raw material is placed in the evaporation component, and then the gas inside the gas storage box 4 is pumped into the evaporation component through the air pump 5. Then the evaporation component starts to work, raising the temperature, and heating the silicon raw material from a solid state to a gaseous state. Then the gaseous silicon raw material will pass through the condenser 14 to reach the separation tower 19. At this time, the condenser 14 does not work, so that the separation tower 19 can separate the impurities in the silicon vapor, thereby separating the impurities from the silicon vapor, and then wait for cooling and then perform multiple processes until the impurities are completely separated. At this time, the silicon is heated to a gaseous state again, and this process is repeated with the gas, but the condenser 14 must be opened. When the gaseous silicon is cooled, it will be converted into a liquid state and flow to the separation tower 19, and then the cooling and crystallization process will be carried out in the separation tower 19. When the evaporation part starts to work, the tank cover 11 is opened, the silicon raw material is placed on the support net 9, the distillation tank 7 is heated by the heating device 10, and then the air pump 5 starts to extract argon gas from the gas storage box 4 and transport it to the distillation tank 7, because argon gas is a rare gas, which is colorless, odorless and non-toxic at room temperature. The thermal conductivity (thermal conductivity coefficient) of argon gas is about 380 joules per meter per Kelvin / (meter·Kelvin). This means that argon can transfer heat quickly. At the same time, argon has stable chemical properties and is not easy to react chemically with other substances at high temperatures. Therefore, as a heating medium, argon can effectively improve the distillation efficiency of silicon. When heated to a suitable temperature and pressure, the silicon raw material will flow into the separation component through the pipeline and condenser 14. At this time, the separation component starts to work, separates the impurities in the silicon raw material, and then cools it. The impurities can be separated by repeating this process several times. Then, when extracting silicon element, the condenser 14 needs to work in cooperation, so that the silicon is first converted into gas, and then passes through the condenser 14 together with the argon. At this time, the gaseous silicon is converted into liquid silicon, and then flows into the separation component for cooling. The argon will flow into the gas storage tank 4 for recycling. This not only improves work efficiency, but also saves investment costs. When silicon vapor enters the separation tower 19, the filter 22 and adsorption plate 23 inside the separation tower 19 can adsorb the impurities contained in the silicon vapor. When the silicon is cooled, most of the impurities contained therein can be removed. By repeating this step, the impurities in the silicon vapor can be removed. Finally, the gaseous silicon is converted into liquid silicon under the operation of the condenser 14, and then flows into the separation tower 19 for cooling and crystallization, while the argon gas will return to the exhaust pipe 6 through the exhaust port 20 and the pipeline set on the cooling tower for circulation. Because a one-way valve 21 is set at the pipeline, the argon gas can only flow in one direction and will not flow back, thereby reducing the working efficiency.When it is necessary to slide the filter screen 22 and the adsorption disc 23, at this time, the bottom of the filter screen 22 will exert pressure on the inclined surface 28 on the side of the slider 27, causing the slider 27 to move inward, thereby compressing the spring 26. The spring 26 will then exert a force on the slider 27 in the opposite direction of the pressure under the action of the elastic force, so that the slider 27 will immediately pop out when it encounters the bayonet under the filter screen 22 or the adsorption disc 23, thus achieving the fixing effect. The inclined surfaces 28 are provided on both sides of the slider 27 to make it more convenient to draw out and fix the filter screen 22. A one-way valve 21 is fixedly connected at the connection between the pipeline and the tank cover 11 to ensure that the gas can flow unidirectionally and prevent the occurrence of backflow. Backflow refers to the reverse flow of gas in the pipeline, resulting in reduced work efficiency and even potential safety problems. The working principle of the one-way valve 21 is to control the flow direction of the gas by opening and closing the valve 13. When the gas flows from one end of the pipeline to the other end, the one-way valve 21 will open and allow the gas to pass through. However, when the gas attempts to flow back from the other end, the one-way valve 21 will close to prevent the backflow from occurring, thus ensuring the normal operation and safety of the pipeline system. The surface of the inclined surface 28 on the slider 27 is smooth to reduce the friction force during operation. Because during the sliding process, the friction force between the slider 27 and the bottom of the filter screen 22 will hinder their movement, thereby affecting the performance and efficiency of the device. The setting of the inclined surface 28 can change the contact mode between the sliders 27, making the pressure distribution between them more uniform, thereby reducing the friction force. In addition, the smooth surface of the inclined surface 28 can further reduce the friction force because the smooth surface can reduce the friction coefficient, making the contact between the sliders 27 smoother. A number of universal wheels 29 are arranged below the base 1 to ensure that the device is more convenient to move. The design and arrangement of these universal wheels 29 are aimed at providing the best mobility performance to ensure the stability and durability of the device on various ground surfaces. These universal wheels 29 have good load-bearing capacity and flexible steering performance, and can easily cope with various complex terrains and environments. The above has generally described the present utility model in detail, but on the basis of the present utility model, some modifications or improvements can be made, which are obvious to those of ordinary skill in the technical field. Therefore, modifications or improvements made without departing from the spirit of the present utility model are within the protection scope of the present utility model.

Claims

1. A large-scale rectification device for high-crystalline silicon, comprising a base (1); characterized in that: An evaporation component for evaporating silicon raw materials is connected above the base (1), and a separation component for separating silicon crystals is connected above the base (1). A first bracket (2) and a second bracket (3) for supporting the evaporation component and the separation component are respectively provided on the base (1), and the first bracket (2) and the second bracket (3) are fixedly connected. An air storage box (4) is fixedly connected to one end of the base (1), and an air pump (5) is fixedly connected to the base (1), and the air pump (5) is respectively connected to the air storage box (4) and the evaporation component through an air pipe (6).

2. A large-scale rectification device for high-crystalline silicon according to claim 1, characterized in that: The evaporation component comprises a distillation tank (7), the distillation tank (7) is fixedly connected to the first bracket (2), an air inlet (8) is arranged on the outside of the distillation tank (7), the air inlet (8) is fixedly connected to the air pipe (6), a support net (9) is fixedly arranged inside the distillation tank (7), a heating device (10) is fixedly arranged below the distillation tank (7), a tank cover (11) is connected to the top of the distillation tank (7), and the tank cover (11) is connected to the distillation tank (7) by bolts (12). The tank cover (11) is fixedly connected with a pipeline, a valve (13) is fixedly connected to the pipeline, a condenser (14) is fixedly connected to the base (1), an air inlet end (15) and an air outlet end (16) are provided on the condenser (14), the other end of the pipeline is fixedly connected to the air inlet end (15) of the condenser (14), a pressure gauge (17) and a thermometer (18) are respectively fixedly connected to the tank cover (11), and the gas in the gas storage box (4) is argon gas.

3. A large-scale rectification device for high-crystalline silicon according to claim 2, characterized in that: The separation component comprises a separation tower (19), the separation tower (19) being fixedly connected to the second bracket (3), an exhaust port (20) being provided on the outside of the separation tower (19), the exhaust port (20) being connected to the air storage box (4) via an air pipe (6), a one-way valve (21) being fixedly connected to the exhaust port (20), a pipeline being fixedly connected to the top of the separation tower (19), the other end of the pipeline being fixedly connected to the exhaust end (16) of the condenser (14), a filter screen (22) and an adsorption plate (23) being respectively provided inside the separation tower (19), a handle (24) being provided on one side of the filter screen (22) and the adsorption plate (23), the filter screen (22) and the adsorption plate (23) being respectively slidably connected to the separation tower (19), a plurality of buckle components being connected to the separation tower (19), and the separation tower (19) being fixed to the filter screen (22) and the adsorption plate (23) via the buckle components.

4. A large-scale rectification device for high-crystalline silicon according to claim 3, characterized in that: The buckle component comprises a housing (25), a slider (27) is arranged inside the housing (25), a spring (26) is arranged between the housing (25) and the slider (27), one end of the spring (26) is fixedly connected to the housing (25), the other end of the spring (26) is fixedly connected to the slider (27), and an inclined surface (28) is symmetrically arranged at one end of the slider (27) away from the spring (26).

5. A large-scale rectification device for high-crystalline silicon according to claim 4, characterized in that: A one-way valve (21) is fixedly provided at the connection point between the pipeline and the tank cover (11).

6. A large-scale rectification device for high-crystalline silicon according to claim 5, characterized in that: The inclined surface (28) provided on the sliding block (27) has a smooth surface.

7. A large-scale rectification device for high-crystalline silicon according to claim 6, characterized in that: A plurality of universal wheels (29) are evenly arranged and fixedly connected below the base (1).

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