Sensor and electronic device

Abstract

The utility model discloses a sensor and electronic equipment, relates to the related technical field of sensors, and is used for solving the problem that when an existing sensor is used in a high-temperature environment, the aging speed of an MEMS chip and an ASIC chip in the sensor is increased. The sensor provided by the utility model comprises a substrate, wherein a shell is arranged on the first side of the substrate and forms a mounting cavity with the first side in an enclosing manner; the sensing assembly is arranged in the mounting cavity, the sensing assembly comprises an ASIC chip and an MEMS chip which are arranged on the first side of the substrate in a spaced mode, and the ASIC chip is electrically connected with the substrate and electrically connected with the MEMS chip; the heat insulation structure is used for preventing heat energy outside the sensor from being transmitted to the mounting cavity through the shell or the substrate, the heat insulation structure comprises a heat insulation layer, and the heat insulation layer is arranged in the substrate and located between the first side and the second side of the substrate; and / or the heat insulation structure comprises a heat insulation part, and the heat insulation part is connected with the first side of the base plate. The working stability and the working life of the sensor are improved.

Description

Technical Field

[0001] The present application relates to the technical field of sensors, and particularly to a sensor and an electronic device. Background Art

[0002] A sensor includes a housing and a substrate. The housing is disposed on the substrate and encloses a cavity therewith. The substrate is provided with a MEMS chip and an ASIC chip in a part of the cavity. The MEMS chip and the ASIC chip are electrically connected, and the ASIC chip is electrically connected to the substrate to achieve signal transmission among the three.

[0003] When the sensor is used in a high-temperature environment, the thermal energy outside the sensor will diffuse into the inside of the sensor, causing the temperature inside the sensor to rise. As a result, not only will the signal transmission intensity of the sensor be reduced, but also the aging speed of the MEMS chip and the ASIC chip provided inside the sensor will be accelerated, seriously affecting the working stability and working life of the sensor, and even causing component failure problems in the sensor. Utility Model Content

[0004] The present application provides a sensor and an electronic device, which can solve the problems that when the existing sensor is used in a high-temperature environment, the signal transmission intensity of the sensor is reduced, and the aging speed of the MEMS chip and the ASIC chip provided inside the sensor is accelerated.

[0005] To achieve the above object, the sensor provided by the present application includes:

[0006] A substrate having a first side and a second side opposite to each other in its thickness direction;

[0007] A housing disposed on the first side of the substrate and enclosing an installation cavity therewith;

[0008] A sensing component disposed in the installation cavity. The sensing component includes an ASIC chip and a MEMS chip spaced apart on the first side of the substrate. The ASIC chip is electrically connected to the substrate and electrically connected to the MEMS chip;

[0009] A heat insulation structure for blocking the thermal energy outside the sensor from being transmitted to the installation cavity through the housing or the substrate. The heat insulation structure includes a heat insulation layer disposed inside the substrate and located between the first side and the second side of the substrate; and / or, the heat insulation structure includes a heat insulation portion connected to the first side of the substrate.

[0010] In some embodiments of the present application, from the first side of the substrate to the second side of the substrate, the substrate is composed of a plurality of stacked layer structures; wherein,

[0011] When the multiple layer structures include one layer of the heat insulation layer, the thickness t1 of the heat insulation layer satisfies: 40um ≤ t1 ≤ 80um;

[0012] When the multiple layer structures include at least two layers of the heat insulation layer, the adjacent two layers of the heat insulation layer are arranged at intervals, and the thickness t2 of each layer of the heat insulation layer satisfies: 40um ≤ t2 ≤ 60um.

[0013] In some embodiments of the present application, the heat insulation part includes a first heat insulation pad, the first heat insulation pad is arranged on the first side of the substrate, and is connected between the ASIC chip and the substrate; and / or, the heat insulation part includes a second heat insulation pad, the second heat insulation pad is arranged on the first side of the substrate, and is connected between the MEMS chip and the substrate.

[0014] In some embodiments of the present application, the heat insulation structure includes a first heat insulation pad and a second heat insulation pad both arranged on the first side of the substrate, the thickness of the first heat insulation pad is greater than the thickness of the second heat insulation pad, and after the first heat insulation pad is connected between the ASIC chip and the substrate, and the second heat insulation pad is connected between the MEMS chip and the substrate, the distance between the side of the MEMS chip facing away from the substrate and the substrate is greater than the distance between the side of the ASIC chip facing away from the substrate and the substrate.

[0015] In some embodiments of the present application, the heat insulation part includes a third heat insulation pad arranged on the first side of the substrate, and both the ASIC chip and the MEMS chip are arranged on the third heat insulation pad.

[0016] In some embodiments of the present application, sound holes penetrating through the substrate are provided on the substrate, the sound holes are correspondingly arranged with the MEMS chip, through holes corresponding to and communicating with the sound holes are provided on the third heat insulation pad, a waterproof layer is provided on the side of the third heat insulation pad facing away from the substrate, and part of the area of the waterproof layer covers the end of the through hole and has a hole-like structure.

[0017] In some embodiments of the present application, in the direction from the ASIC chip to the MEMS chip, the thickness of the third heat insulation pad gradually increases.

[0018] In some embodiments of the present application, the heat insulation part includes a first heat insulation cover, the first heat insulation cover covers the outside of the ASIC chip and is connected to the first side of the substrate; and / or, the heat insulation structure includes a second heat insulation cover, the second heat insulation cover covers the outside of the MEMS chip and is connected to the first side of the substrate.

[0019] In some embodiments of the present application, the heat insulation part includes a first heat insulation cover and a second heat insulation cover both connected to the first side of the substrate. The first heat insulation cover covers the outside of the ASIC chip and has a first through hole thereon. The second heat insulation cover covers the outside of the MEMS chip and has a second through hole thereon;

[0020] Wherein, the sensor further includes:

[0021] A first conductive connection line passing through the first through hole and the second through hole to electrically connect the ASIC chip and the MEMS chip;

[0022] A second conductive connection line passing through the first through hole to electrically connect the ASIC chip and the substrate.

[0023] In some embodiments of the present application, the heat insulation part includes a third heat insulation cover. The third heat insulation cover covers the outside of the ASIC chip and the MEMS chip and is connected to the first side of the substrate. The third heat insulation cover has a plurality of third through holes thereon.

[0024] In some embodiments of the present application, the substrate is provided with a sound hole penetrating the first side and the second side of the substrate. The sound hole is correspondingly arranged with the MEMS chip. From the second side of the substrate to the first side of the substrate, the size of the sound hole gradually increases.

[0025] In some embodiments of the present application, the heat insulation structure is made of a nano-aerogel material.

[0026] In this embodiment, since a heat insulation layer is provided in the substrate and / or the first side of the substrate is provided with a heat insulation part, the heat insulation layer and / or the heat insulation part can block the heat energy outside the sensor from being transferred to the installation cavity through the substrate or the housing. Therefore, when using the sensor with the heat insulation structure in a high-temperature environment, the heat energy outside the sensor can be effectively isolated from being transferred to the inside of the installation cavity, so as to avoid the problem that the sensing components arranged in the installation cavity are in a high-temperature environment, resulting in an accelerated aging speed and even component failure, thereby improving the working stability and working life of the sensor.

[0027] On the other hand, the present application also provides an electronic device, and the electronic device includes the sensor described in any one of the above technical solutions.

[0028] Since the sensor in the electronic device provided by the present application has the same structure as the sensor described in any one of the above technical solutions, the two can solve the same technical problems and achieve the same technical effects. Description of the Drawings

[0029] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0030] Figure 1 is a schematic structural diagram of a heat insulation structure including a layer of heat insulation layer in an embodiment of the present application;

[0031] Figure 2 is a schematic structural diagram of a heat insulation structure including a heat insulation part in an embodiment of the present application;

[0032] Figure 3 is a schematic structural diagram of a heat insulation structure including a heat insulation layer and a heat insulation part in an embodiment of the present application;

[0033] Figure 4 is a schematic structural diagram of a heat insulation structure including two layers of heat insulation layers in an embodiment of the present application;

[0034] Figure 5 is a schematic structural diagram of a heat insulation structure including another heat insulation part in an embodiment of the present application;

[0035] Figure 6 is a schematic structural diagram of a heat insulation structure including yet another heat insulation part in an embodiment of the present application;

[0036] Figure 7 is a schematic structural diagram of a heat insulation structure including still another heat insulation part in an embodiment of the present application;

[0037] Figure 8 is a top view of a sensor in an embodiment of the present application.

[0038] The main reference numerals in the accompanying drawings of the present application are described as follows:

[0039] 1 - Substrate; 12 - Sound hole;

[0040] 2 - Housing; 21 - Installation cavity;

[0041] 3 - Sensing component; 31 - ASIC chip; 32 - MEMS chip;

[0042] 4 - Heat insulation structure; 41 - First heat insulation part; 42 - Heat insulation part; 421 - First heat insulation pad; 422 - Second heat insulation pad; 423 - Third heat insulation pad; 4231 - Through hole; 424 - First heat insulation cover; 4241 - First sub - cavity; 4242 - First through hole; 425 - Second heat insulation cover; 4251 - Second sub - cavity; 4252 - Second through hole; 426 - Third heat insulation cover; 4261 - Third through hole;

[0043] 5 - Waterproof layer;

[0044] 6 - First conductive connection line;

[0045] 7 - Second conductive connection line. Detailed implementation manners

[0046] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0047] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0048] The terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise stated, the meaning of "a plurality" is two or more.

[0049] In the description of the present application, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0050] The present application provides a sensor and an electronic device, which will be described in detail below. It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments of the present application. And in the following embodiments, the descriptions of each embodiment have their own focuses. For the parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0051] When the sensor is used in a high-temperature environment, the thermal energy outside the sensor will diffuse into the interior of the sensor, causing the temperature inside the sensor to rise. As a result, not only will the signal transmission intensity of the sensor decrease, but also the aging rate of the MEMS chip and ASIC chip set inside the sensor will increase, seriously affecting the working stability and working life of the sensor, and even causing problems such as component failure of the sensor.

[0052] Therefore, the present application provides the following embodiments to prevent the thermal energy outside the sensor from being transferred to the installation cavity of the sensor when the sensor is used in a high-temperature environment, thereby avoiding a series of adverse effects.

[0053] Referring to Figures 1 to 3 , the sensor provided by the present application includes a substrate 1, a housing 2, a sensing component 3, and a heat insulation structure 4. Among them, the substrate 1 has a first side and a second side opposite to each other in its thickness direction. The housing 2 is disposed on the first side of the substrate 1 and encloses with it to form an installation cavity 21. The sensing component 3 is disposed in the installation cavity 21. The sensing component 3 includes an ASIC chip 31 and a MEMS chip 32 spaced apart on the first side of the substrate 1. The ASIC chip 31 is electrically connected to the substrate 1 and is electrically connected to the MEMS chip 32. The heat insulation structure 4 is used to block the thermal energy outside the sensor from being transferred to the installation cavity 21 through the housing 2 or the substrate 1. It includes a heat insulation layer 41. The heat insulation layer 41 is disposed in the substrate 1 and is located between the first side and the second side of the substrate 1, for blocking the thermal energy outside the sensor from being transferred to the installation cavity 21 through the substrate 1; and / or, the heat insulation structure 4 includes a heat insulation portion 42. The heat insulation portion 42 is connected to the first side of the substrate 1, for blocking the thermal energy outside the sensor from being transferred to the installation cavity 21 through the housing 2 or the substrate 1.

[0054] In this embodiment, since the heat insulation layer 41 is provided in the substrate 1 and / or the heat insulation portion 42 is provided on the first side of the substrate 1, the heat insulation layer 41 and / or the heat insulation portion 42 can block the thermal energy outside the sensor from being transferred to the installation cavity 21 through the substrate 1 or the housing 2. Therefore, when the sensor with the heat insulation structure 4 is used in a high-temperature environment, it can effectively isolate the thermal energy outside the sensor from being transferred to the inside of the installation cavity 21, so as to avoid the problem that the sensing component 3 disposed in the installation cavity 21 is in a high-temperature environment, resulting in an accelerated aging rate and even component failure, thereby improving the working stability and working life of the sensor.

[0055] Specifically, Figure 1 shows an embodiment in which the heat insulation structure 4 only includes the heat insulation layer 41, Figure 2 shows an embodiment in which the heat insulation structure 4 only includes the heat insulation portion 42, Figure 3 shows an embodiment in which the heat insulation structure 4 includes the heat insulation layer 41 and the heat insulation portion 42.

[0056] For the embodiment where "the heat insulation structure 4 only includes the heat insulation layer 41".

[0057] Referring to Figure 1 and Figure 4 , from the first side of the substrate 1 to the second side of the substrate 1, the substrate 1 is composed of a plurality of stacked layer structures, and at least one heat insulation layer 41 is included in the plurality of layer structures. The heat insulation layer 41 is used to block the heat energy outside the sensor from being transmitted to the installation cavity 21 through the substrate 1. In addition, when the substrate 1 of the sensor is used for welding with the client circuit board, it can effectively isolate the high temperature generated by welding from being transmitted to the inside of the installation cavity 21 through the substrate 1, so as to prevent the temperature in the installation cavity 21 from being too high. At the same time, since the substrate 1 includes the heat insulation layer 41, it can also increase the structural strength of the substrate 1 to avoid the problem of warping of the substrate 1 due to the influence of thermal stress when welding with the client circuit board.

[0058] Specifically, as Figure 1 shown, the plurality of layer structures include one heat insulation layer 41, and the thickness t1 of this heat insulation layer 41 satisfies: 40um ≤ t1 ≤ 80um. Among them, the greater the thickness of the heat insulation layer 41, the better its heat insulation performance, and the more effectively it can reduce heat conduction. In this application, the minimum value of the thickness t1 of the heat insulation layer 41 is limited to 40um to ensure that it has sufficient heat insulation effect; and the maximum value of the thickness t1 of the heat insulation layer 41 is limited to 80um, which can ensure that the overall thickness of the substrate 1 is not too thick, which is beneficial to ensuring the thickness dimension of the sensor.

[0059] As Figure 4 shown, the plurality of layer structures include at least two heat insulation layers 41, and the adjacent two heat insulation layers 41 are arranged at intervals. The thickness t2 of each heat insulation layer 41 satisfies: 40um ≤ t2 ≤ 60um. Among them, heat conduction is the process of heat transferring from a high-temperature region to a low-temperature region, and the main purpose of the heat insulation layer 41 is to reduce this conduction process. When two heat insulation layers 41 are in close contact, the heat conduction between them will increase. The interval between the adjacent two heat insulation layers 41 in this application can increase the length of the heat conduction path, which is beneficial to reducing heat conduction to better control heat conduction. Figure 4 Only the embodiment in which the plurality of layer structures include two heat insulation layers 41 is shown in

[0060] Of course, the plurality of layer structures may also include three, four or more heat insulation layers 41.

[0061] For the embodiment where "the heat insulation structure 4 only includes the heat insulation part 42".

[0062] Referring to Figure 2 , in some embodiments of the present application, the heat insulation part 42 includes a first heat insulation pad 421 and / or a second heat insulation pad 422, and specifically includes the following three situations: Situation 1, the sensor includes a first heat insulation pad 421, and the first heat insulation pad 421 is disposed on the first side of the substrate 1 and is connected between the ASIC chip 31 and the substrate 1. Situation 2, the sensor further includes a second heat insulation pad 422, and the second heat insulation pad 422 is disposed on the first side of the substrate 1 and is connected between the MEMS chip 32 and the substrate 1. Situation 3, as Figure 2 shown, the sensor includes a first heat insulation pad 421 and a second heat insulation pad 422. The first heat insulation pad 421 is disposed on the first side of the substrate 1 and is connected between the ASIC chip 31 and the substrate 1. The second heat insulation pad 422 is disposed on the first side of the substrate 1 and is connected between the MEMS chip 32 and the substrate 1. Thus, the heat transfer path from the substrate 1 to the sensing component 3 is blocked by the first heat insulation pad 421 and / or the second heat insulation pad 422, which can reduce the heat energy conduction from the substrate 1 and prevent heat transfer, ensuring that the temperatures of the ASIC chip 31 and the MEMS chip 32 are maintained within an acceptable range.

[0063] At the same time, the first heat insulation pad 421 can reduce the temperature difference between the ASIC chip 31 and the substrate 1, and the second heat insulation pad 422 can reduce the temperature difference between the MEMS chip 32 and the substrate 1, thereby reducing the occurrence of thermal stress and improving the reliability of the ASIC chip 31 and the MEMS chip 32. In addition, the first heat insulation pad 421 and / or the second heat insulation pad 422 can also provide electrical isolation between the substrate 1 and the corresponding chip.

[0064] Based on the embodiment of "the sensor includes a first heat insulation pad 421 and a second heat insulation pad 422. The first heat insulation pad 421 is disposed on the first side of the substrate 1 and is connected between the ASIC chip 31 and the substrate 1. The second heat insulation pad 422 is disposed on the first side of the substrate 1 and is connected between the MEMS chip 32 and the substrate 1", the thickness of the first heat insulation pad 421 is greater than the thickness of the second heat insulation pad 422, and after the first heat insulation pad 421 is connected between the ASIC chip 31 and the substrate 1 and the second heat insulation pad 422 is connected between the MEMS chip 32 and the substrate 1, the distance between the side of the MEMS chip 32 facing away from the substrate 1 and the substrate 1 is greater than the distance between the side of the ASIC chip 31 facing away from the substrate 1 and the substrate 1.

[0065] Among them, making the thickness of the first thermal insulation pad 421 greater than that of the second thermal insulation pad 422 can reduce the height difference between the MEMS chip 32 and the ASIC chip 31. However, in order to achieve wire bonding between the MEMS chip 32 and the ASIC chip 31, there still needs to be a certain height difference between them. In other words, when the ASIC chip 31 is disposed on the first thermal insulation pad 421 and the MEMS chip 32 is disposed on the second thermal insulation pad 422, the height of the MEMS chip 32 is higher than that of the ASIC chip 31.

[0066] Referring to Figure 5 , in some embodiments of the present application, the above-mentioned heat insulation portion 42 includes a third heat insulation pad 423. The third heat insulation pad 423 is disposed on the first side of the substrate 1, and both the ASIC chip 31 and the MEMS chip 32 are disposed on the side of the third heat insulation pad 423 facing away from the substrate 1. Only one heat insulation pad needs to be designed, which simplifies the structural difficulty of the heat insulation portion 42 and is easy to implement.

[0067] Based on the above embodiments, a sound hole 11 penetrating through the first side and the second side of the substrate 1 is provided on the substrate 1. The sound hole 11 is correspondingly arranged with the MEMS chip 32. A via hole 4231 corresponding to and communicating with the sound hole 11 is provided on the third heat insulation pad 423. A waterproof layer 5 is provided on the side of the third heat insulation pad 423 facing away from the substrate 1. A partial area of the waterproof layer 5 covers the end of the via hole 1001, and the waterproof layer 5 has a hole-like structure. Thus, providing the waterproof layer 5 can effectively improve the waterproof performance of the sensor. Moreover, the via hole 4231 of the third heat insulation pad 423 can adsorb foreign matters on its hole wall when the foreign matters enter the installation cavity 21 through the sound hole 11, avoiding the MEMS chip 32 from being contaminated.

[0068] Based on the above embodiments, the ASIC chip 31 and the MEMS chip 32 are arranged side by side. In the direction from the ASIC chip 31 to the MEMS chip 32, the thickness of the third heat insulation pad 423 gradually increases. Thereby, the surface area of the hole wall of the via hole 4231 can be increased, and thus the adsorption effect of the hole wall of the via hole 4231 can be further increased to better avoid the MEMS chip 32 from being contaminated.

[0069] In some embodiments of the present application, the heat insulation part 42 includes a first heat shield 424 and / or a second heat shield 425, and specifically includes the following three situations: Situation 1, the sensor includes a first heat shield 424, and the first heat shield 424 covers the outside of the ASIC chip 31, is located inside the housing 2 and is connected to the substrate 1. In other words, the first heat shield 424 and the substrate 1 enclose a first sub-cavity 4241 located in the installation cavity 21, and the ASIC chip 31 is arranged in the first sub-cavity 4241. Situation 2, the sensor includes a second heat shield 425, and the second heat shield 425 covers the outside of the MEMS chip 32, is located inside the housing 2 and is connected to the substrate 1. In other words, the second heat shield 425 and the substrate 1 enclose a second sub-cavity 4251 located in the installation cavity 21, and the MEMS chip 32 is arranged in the second sub-cavity 4251. Situation 3, as Figure 6 shown, the sensor includes a first heat shield 424 and a second heat shield 425. The first heat shield 424 covers the outside of the ASIC chip 31, is located inside the housing 2 and is connected to the substrate 1. The second heat shield 425 covers the outside of the MEMS chip 32, is located inside the housing 2 and is connected to the substrate 1.

[0070] Thus, by isolating the ASIC chip 31 and / or the MEMS chip 32 from the heat source outside the packaging structure through the first heat shield 424 and / or the second heat shield 425, it is possible to prevent heat energy from being conducted to the ASIC chip 31 and / or the MEMS chip 32 in the form of air convection or thermal radiation, so as to keep the ASIC chip 31 and / or the MEMS chip 32 working within a relatively stable temperature range. Moreover, in addition to the heat insulation function, the first heat shield 424 and / or the second heat shield 425 can also provide an additional mechanical protection layer to protect the ASIC chip 31 and / or the MEMS chip 32 from mechanical damage in the external environment of the packaging structure.

[0071] For the embodiment of "the sensor includes a first heat shield 424 and a second heat shield 425, the first heat shield 424 covers the outside of the ASIC chip 31, is located inside the housing 2 and is connected to the substrate 1, the second heat shield 425 covers the outside of the MEMS chip 32, is located inside the housing 2 and is connected to the substrate 1", a first through hole 4242 is provided on the first heat shield 424, a second through hole 4252 is provided on the second heat shield 425, the sensor further includes a first conductive connection line 6 and a second conductive connection line 7, one end of the first conductive connection line 6 is electrically connected to the ASIC chip 31, and the other end is electrically connected to the MEMS chip 32 through the first through hole 4242 and the second through hole 4252, and one end of the second conductive connection line 7 is electrically connected to the ASIC chip 31, and the other end is electrically connected to the substrate 1 through the first through hole 4242.

[0072] Among them, there are multiple first through-holes 4242 and second through-holes 4252. The first through-holes 4242 and the second through-holes 4252 are used to achieve electrical connection and signal transmission between the ASIC chip 31, the MEMS chip 32 and the substrate 1. Moreover, by adjusting the positions and numbers of the first through-holes 4242 and the second through-holes 4252, a specific heat transfer path can be realized to disperse or export the heat generated by the ASIC chip 31 and the MEMS chip 32, so as to improve the thermal management capabilities of the ASIC chip 31 and the MEMS chip 32.

[0073] In some other embodiments of the present application, as Figure 7 shown, the heat insulation portion 42 further includes a third heat insulation cover 426. The third heat insulation cover 426 covers the outside of the ASIC chip 31 and the MEMS chip 32, is located inside the housing 2 and is connected to the first side of the substrate 1. A plurality of third through-holes 4261 are provided on the third heat insulation cover 426. Since the signal-to-noise ratio of the sensor is positively correlated with the volume of the cavity where it is located, in order not to reduce the signal-to-noise ratio of the sensor and at the same time ensure the heat insulation effect of the third heat insulation cover 426 on the ASIC chip 31 and the MEMS chip 32, the above-mentioned third heat insulation cover 426 is provided with a plurality of third through-holes 4261 for communicating the installation cavity 21 and the sub-cavity formed by enclosing the third heat insulation cover 426 and the substrate 1.

[0074] It can be understood that in the embodiments shown in Figure 6 and Figure 7 , the first heat insulation pad 421 and the second heat insulation pad 422 can also be cancelled. That is to say, in some embodiments of the present application, the heat insulation portion 42 only includes the first heat insulation cover 424 and the second heat insulation cover 425, or only includes the third heat insulation cover 426. Among them, if the first heat insulation pad 421 and the second heat insulation pad 422 are not cancelled, the heat insulation effect of the above-mentioned sensor is better.

[0075] Based on the sensor described in any of the above technical solutions, the sensor further includes a first conductive connection line 6 and a second conductive connection line 7. One end of the first conductive connection line 6 is electrically connected to the ASIC chip 31, and the other end is electrically connected to the MEMS chip 32. One end of the second conductive connection line 7 is electrically connected to the ASIC chip 31, and the other end is electrically connected to the substrate 1.

[0076] Based on the sensor described in any of the above embodiments, a sound hole 11 penetrating the first side and the second side of the substrate 1 is provided on the substrate 1 of the sensor. The sound hole 11 is arranged corresponding to the MEMS chip 32. From the second side of the substrate 1 to the first side of the substrate 1, the size of the sound hole 11 gradually increases, which is beneficial for sound to enter the MEMS chip 32, causing the diaphragm on the MEMS chip 32 to vibrate, thereby improving the signal-to-noise ratio of the sensor. It should be noted thatFigures 2 to 7 The sound hole 11 in Figure 1 can also adopt the structure of the sound hole 11 as shown in

[0077] Based on the sensors described in any of the above embodiments, the heat insulation structure (the heat insulation layer 41 and the heat insulation part 42) is made of a nano-aerogel material to ensure that the heat insulation structure has good heat insulation performance. Exemplarily, the nano-aerogel can be a silica nano-aerogel or a zirconia nano-aerogel. The first heat insulation pad 421, the second heat insulation pad 422, the third heat insulation pad 423, the first heat insulation cover 424, the second heat insulation cover 425 and the third heat insulation cover 426 in the heat insulation part 42 can also be made of a nano-aerogel material to ensure that they have good heat insulation performance. Exemplarily, the nano-aerogel can be a silica nano-aerogel or a zirconia nano-aerogel.

[0078] As Figure 8 shown, the MEMS chip 32 has a first signal port and a second signal port. The ASIC chip 31 includes a first electrical connection end, a second electrical connection end, a third electrical connection end, a fourth electrical connection end and a second electrical connection end. The substrate 1 is provided with a first conductive terminal, a second conductive terminal and a third conductive terminal. Among them, there are two first conductive connection lines 6. The first first conductive connection line 6 electrically connects the first signal port and the first electrical connection end, and the second first conductive connection line 6 electrically connects the second signal port and the second electrical connection end. There are three second conductive connection lines 7. The first second conductive connection line 7 electrically connects the third electrical connection end and the first conductive terminal, the second second conductive connection line 7 electrically connects the fourth electrical connection end and the second conductive terminal, and the third second conductive connection line 7 electrically connects the fifth electrical connection end and the third conductive terminal.

[0079] On the other hand, the present application also provides an electronic device, and the electronic device includes the sensor described in any of the above technical solutions.

[0080] Since the sensor in the electronic device provided by the present application has the same structure as the sensors described in any of the above technical solutions, the two can solve the same technical problems and achieve the same technical effects.

[0081] In the description of this specification, specific features, structures, materials or characteristics can be combined in a suitable manner in any one or more embodiments or examples.

[0082] As described above, this is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims. In addition, specific examples are used in the specification to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application, and the content of this specification should not be construed as a limitation to the present application.

Claims

1. A sensor, characterized in that: The sensor comprises: A substrate having a first side and a second side disposed opposite to each other in a thickness direction thereof; A housing, disposed on the first side of the substrate and enclosing the first side of the substrate to form a mounting cavity; A sensing component is disposed in the mounting cavity, the sensing component comprising an ASIC chip and a MEMS chip arranged at intervals on a first side of the substrate, the ASIC chip is electrically connected to the substrate, and is electrically connected to the MEMS chip; A thermal insulation structure is used to prevent heat energy outside the sensor from being transferred to the installation cavity through the shell or the substrate, the thermal insulation structure includes a thermal insulation layer, the thermal insulation layer is arranged in the substrate and is located between the first side and the second side of the substrate; and / or the thermal insulation structure includes a thermal insulation part, and the thermal insulation part is connected to the first side of the substrate.

2. The sensor according to claim 1, characterized in that From the first side of the substrate to the second side of the substrate, the substrate is composed of a plurality of layer structures stacked in layers; wherein, When the multiple layer structure includes a layer of the thermal insulation layer, the thickness t1 of the thermal insulation layer satisfies: 40um≤t1≤80um; When the multiple layer structure includes at least two layers of the thermal insulation layer, two adjacent layers of the thermal insulation layer are arranged at intervals, and the thickness t2 of each layer of the thermal insulation layer satisfies: 40um≤t2≤60um.

3. The sensor according to claim 1, characterized in that The thermal insulation part includes a first thermal insulation pad, which is arranged on the first side of the substrate and connected between the ASIC chip and the substrate; and / or the thermal insulation part includes a second thermal insulation pad, which is arranged on the first side of the substrate and connected between the MEMS chip and the substrate.

4. The sensor according to claim 1, characterized in that The thermal insulation structure includes a first thermal insulation pad and a second thermal insulation pad, both of which are arranged on the first side of the substrate. The thickness of the first thermal insulation pad is greater than the thickness of the second thermal insulation pad. When the first thermal insulation pad is connected between the ASIC chip and the substrate, and the second thermal insulation pad is connected between the MEMS chip and the substrate, the distance between the side of the MEMS chip facing away from the substrate and the substrate is greater than the distance between the side of the ASIC chip facing away from the substrate and the substrate.

5. The sensor according to claim 1, characterized in that The heat insulation part includes a third heat insulation pad arranged on the first side of the substrate, and the ASIC chip and the MEMS chip are both arranged on the third heat insulation pad.

6. The sensor according to claim 5, characterized in that The substrate is provided with a sound hole passing through it, and the sound hole is arranged corresponding to the MEMS chip. The third thermal insulation pad is provided with a via hole corresponding to and connected to the sound hole. The third thermal insulation pad is provided with a waterproof layer on the side facing away from the substrate, and a partial area of ​​the waterproof layer covers the end of the via hole and has a hole-like structure.

7. The sensor according to claim 5, characterized in that In a direction from the ASIC chip to the MEMS chip, the thickness of the third thermal insulation pad gradually increases.

8. The sensor according to any one of claims 1 to 7, characterized in that: The heat insulation part includes a first heat insulation cover, which is arranged outside the ASIC chip and connected to the first side of the substrate; and / or the heat insulation structure includes a second heat insulation cover, which is arranged outside the MEMS chip and connected to the first side of the substrate.

9. The sensor according to any one of claims 1 to 7, characterized in that: The heat insulation part comprises a first heat insulation cover and a second heat insulation cover both connected to the first side of the substrate, the first heat insulation cover is arranged outside the ASIC chip and has a first through hole thereon, and the second heat insulation cover is arranged outside the MEMS chip and has a second through hole thereon; Wherein, the sensor further comprises: a first conductive connection line passing through the first through hole and the second through hole to electrically connect the ASIC chip and the MEMS chip; The second conductive connection line passes through the first through hole to electrically connect the ASIC chip and the substrate.

10. The sensor according to any one of claims 1 to 7, characterized in that: The heat insulation part comprises a third heat insulation cover, which is arranged outside the ASIC chip and the MEMS chip and connected to the first side of the substrate. The third heat insulation cover is provided with a plurality of third through holes.

11. The sensor according to claim 1, characterized in that The substrate is provided with an acoustic hole penetrating the first side and the second side of the substrate. The acoustic hole is arranged corresponding to the MEMS chip, and the size of the acoustic hole gradually increases from the second side of the substrate to the first side of the substrate.

12. The sensor according to claim 1, characterized in that The heat insulation structure is made of nano aerogel material.

13. An electronic device, characterized in that: include: The sensor according to any one of claims 1 to 12.

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