Light-emitting substrate and display device

Abstract

The utility model relates to the technical field of display, and provides a light-emitting substrate and a display device.The light-emitting substrate comprises a substrate body, a first conductive layer, a first inorganic passivation layer and a plurality of bonding pads, and the first conductive layer comprises a first connecting part; the first inorganic passivation layer is located on the side, away from the substrate, of the first conductive layer, a first through hole is formed in the first inorganic passivation layer, and the orthographic projection of the first through hole on the substrate and the orthographic projection of the first connecting part on the substrate are at least partially overlapped; the bonding pad comprises a via hole connecting part and a welding part which are connected, the welding part is located on the side, away from the substrate, of the first inorganic passivation layer, and the via hole connecting part penetrates through the first through hole to be connected with the first connecting part; wherein the first through hole comprises an opening deviating from one side of the substrate, the welding part covers the opening, and the edge of the orthographic projection of the welding part on the substrate and the edge of the orthographic projection of the opening on the substrate form an annular structure. The light-emitting substrate has good structural stability.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a display device. Background Art

[0002] In the related art, during the reliability test of the light-emitting substrate, bulging is likely to occur around the pad, thus affecting the product quality.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Utility Model Content

[0004] According to one aspect of the present disclosure, a light-emitting substrate is provided, wherein the light-emitting substrate comprises:

[0005] substrate substrate;

[0006] A first conductive layer, located on one side of the base substrate, wherein the first conductive layer includes a first connecting portion;

[0007] a first inorganic passivation layer, located on a side of the first conductive layer away from the base substrate, a first through hole being formed on the first inorganic passivation layer, an orthographic projection of the first through hole on the base substrate and an orthographic projection of the first connecting portion on the base substrate at least partially overlapping;

[0008] A plurality of pads, each pad comprising a via connection portion and a welding portion connected to each other, the welding portion being located on a side of the first inorganic passivation layer away from the base substrate, and the via connection portion being arranged through the first through hole to be connected to the first connection portion;

[0009] The first through hole includes an opening facing away from the base substrate, the welding portion covers the opening, and an edge of the orthographic projection of the welding portion on the base substrate and an edge of the orthographic projection of the opening on the base substrate form an annular structure.

[0010] In an exemplary embodiment of the present disclosure, the welding portion includes a main body portion and an annular extension portion, the annular extension portion is arranged around the main body portion, the orthographic projection of the main body portion on the substrate coincides with the orthographic projection of the opening on the substrate, and the orthographic projection of the annular extension portion on the substrate coincides with the annular structure;

[0011] The annular extension portion is bonded to a side surface of the first inorganic passivation layer that is away from the base substrate.

[0012] In an exemplary embodiment of the present disclosure, the width of the annular structure is greater than or equal to 2 μm and less than or equal to 6 μm.

[0013] In an exemplary embodiment of the present disclosure, the height of the via connection portion in the direction perpendicular to the substrate is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms.

[0014] In an exemplary embodiment of the present disclosure, the geometric diameter of the positive projection of the via connection portion on the substrate is d1, and the height of the via connection portion in the direction perpendicular to the substrate is h1, and d1 / h1 is greater than or equal to 3 and less than or equal to 500.

[0015] In an exemplary embodiment of the present disclosure, the ratio of the thickness of the welding portion in the direction perpendicular to the substrate to the thickness of the pad in the direction perpendicular to the substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4.

[0016] In an exemplary embodiment of the present disclosure, the via connection portion is filled in the first via, the via connection portion includes a first sidewall opposite to the inner wall of the first via, and the angle formed between the first sidewall and the substrate is greater than or equal to 90° and less than or equal to 130°.

[0017] In an exemplary embodiment of the present disclosure, the welding portion includes a main body portion and an anti-oxidation layer, the main body portion is connected to the via connection portion, and the anti-oxidation layer covers the end face of the main body portion facing away from the first inorganic passivation layer and the side face of the main body portion connected to the end face.

[0018] In an exemplary embodiment of the present disclosure, the materials of the via connection portion and the main body portion include nickel, and the material of the anti-oxidation layer includes gold.

[0019] In an exemplary embodiment of the present disclosure, the material of the first inorganic passivation layer includes one or more of silicon oxide, silicon nitride, and aluminum oxide;

[0020] And / or, the material of the first conductive layer includes copper.

[0021] In an exemplary embodiment of the present disclosure, the light-emitting substrate further includes:

[0022] A second conductive layer, the second conductive layer is located between the substrate and the first conductive layer, and at least part of the structure of the second conductive layer and at least part of the structure of the first conductive layer are connected through vias.

[0023] In an exemplary embodiment of the present disclosure, the light-emitting substrate further includes:

[0024] a second inorganic passivation layer, located between the first inorganic passivation layer and the first conductive layer;

[0025] a first organic layer, located between the second inorganic passivation layer and the first inorganic passivation layer;

[0026] A second through hole is formed on the second inorganic passivation layer and the first organic layer, and the via connection portion is arranged to penetrate the second through hole to be connected with the first connection portion.

[0027] In an exemplary embodiment of the present disclosure, a ratio of a thickness of the second inorganic passivation layer to a thickness of the first organic layer is greater than or equal to 1 / 10 and less than or equal to 1.

[0028] In an exemplary embodiment of the present disclosure, the light-emitting substrate is used to form a backlight module, or the light-emitting substrate is used to form a display panel.

[0029] In an exemplary embodiment of the present disclosure, the light-emitting substrate further includes a light-emitting chip and a driving chip, the driving chip is used to drive the light-emitting chip to emit light, part of the pads are used to be welded to the light-emitting chip, and part of the pads are used to be welded to the driving chip;

[0030] Alternatively, the light-emitting substrate further includes a light-emitting chip, and the solder pad is used for soldering to the light-emitting chip.

[0031] According to one aspect of the present disclosure, a method for manufacturing a light-emitting substrate is provided, wherein the manufacturing method comprises:

[0032] Providing a substrate;

[0033] Forming a conductive material layer on the base substrate, and etching the conductive material layer to form a first conductive layer, wherein the first conductive layer includes a first connecting portion;

[0034] forming an inorganic passivation material layer on a side of the first conductive layer away from the base substrate, etching the inorganic passivation material layer to form a first inorganic passivation layer, wherein a first through hole is formed on the first inorganic passivation layer, so that at least a part of the structure of the first connecting portion is exposed outside the inorganic passivation material layer;

[0035] Performing an activation treatment on the first connecting portion exposed outside the inorganic passivation material layer to form an activation layer on a side of the first connecting portion away from the substrate;

[0036] Growing a metal structure on a side of the activation layer away from the substrate to form a pad, the pad comprising a via connection portion and a welding portion connected to each other, the welding portion being located on a side of the first inorganic passivation layer away from the substrate, the via connection portion penetrating the first through hole to be connected to the first connection portion;

[0037] Among them, the first through hole includes an opening on a side facing away from the substrate, the welding portion covers the opening, and an edge of a positive projection of the welding portion on the substrate and an edge of a positive projection of the opening on the substrate form an annular structure.

[0038] According to one aspect of the present disclosure, a display device is provided, wherein the display device includes the above-mentioned light-emitting substrate.

[0039] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. Description of the Drawings

[0040] The drawings herein are incorporated into the specification and form a part of the specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0041] Figure 1 It is a schematic structural diagram of a backlight module in the related art;

[0042] Figure 2 It is an electron microscope image of a backlight module in the related art;

[0043] Figure 3 It is a schematic structural diagram of an exemplary embodiment of the light-emitting substrate of the present disclosure;

[0044] Figure 4 It is an electron microscope image in an exemplary embodiment of the light-emitting substrate of the present disclosure;

[0045] Figure 5 It is a partial top view in an exemplary embodiment of the light-emitting substrate of the present disclosure;

[0046] Figure 6 It is another partial top view in an exemplary embodiment of the light-emitting substrate of the present disclosure;

[0047] Figure 7 It is a schematic structural diagram of another exemplary embodiment of the light-emitting substrate of the present disclosure;

[0048] Figure 8 It is a schematic structural diagram of another exemplary embodiment of the light-emitting substrate of the present disclosure. Detailed Description of the Embodiments

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Like reference numerals in the figures denote like or similar structures and thus their detailed description will be omitted.

[0050] The terms "a", "an", and "the" are used to denote the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to mean an open inclusion and mean that there may be additional elements / components / etc. in addition to the listed elements / components / etc.

[0051] In the description of the present disclosure, unless otherwise clearly specified and defined, the terms "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance; the term "plurality" means two or more; the term "and / or" includes any combination and all combinations of one or more of the associated listed items. In particular, reference to "the" object or "an" object also intends to mean one of the possible plurality of such objects.

[0052] Unless otherwise specified or stated, terms such as "connected", "fixed", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, an integral connection, an electrical connection, or a signal connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0053] Furthermore, in the description of the present disclosure, it should be understood that the orientation terms such as "upper", "lower", "inner", "outer", etc. described in the example embodiments of the present disclosure are described from the angles shown in the drawings and should not be construed as limiting the example embodiments of the present disclosure. It should also be understood that in the context, when it is mentioned that an element or feature is connected to one or more "upper", "lower", or "inner", "outer" of another element, it can not only be directly connected to one or more "upper", "lower", or "inner", "outer" of another element, but also be indirectly connected to one or more "upper", "lower", or "inner", "outer" of another element through an intermediate element.

[0054] As Figure 1As shown, it is a schematic structural diagram of a backlight module in the related art. The backlight module includes a substrate substrate 100, a fifth inorganic passivation layer PVX5, a second conductive layer 12, a third inorganic passivation layer PVX3, a second organic layer OC2, a fourth inorganic passivation layer PVX4, a first conductive layer, a first inorganic passivation layer PVX1, and a first organic layer OC1, which are sequentially stacked. Among them, the first conductive layer includes a first connection portion 11, and through holes H are formed in the first inorganic passivation layer PVX1 and the first organic layer OC1 to expose at least a part of the first connection portion 11 outside the first inorganic passivation layer PVX1 and the first organic layer OC1. The backlight module further includes a pad 2 located in the through hole H. The pad 2 is connected to the first connection portion 11, and the pad 2 is used for soldering a light-emitting chip LED or a driving chip IC. The driving chip IC is used to drive the light-emitting chip LED to emit light.

[0055] However, as Figure 1 shown, due to the poor bonding degree between the pad 2 and the organic material, a large crack is formed between the pad 2 and the first organic layer OC1. Under the pulling of this crack, a crack will also be generated between the first inorganic passivation layer PVX1 and the pad 2. As Figure 2 shown, it is an electron microscope image of a backlight module in the related art. According to Figure 2 it can be clearly seen that the first inorganic passivation layer PVX1, the first organic layer OC1, and the pad 2 all have cracks. When soldering the pad 2 and the light-emitting chip LED or the driving chip IC with solder paste 9, the solder paste 9 can enter the first conductive layer through the crack between the pad 2 and the first organic layer OC1 and the crack between the first inorganic passivation layer PVX1 and the pad 2. The solder paste 9 will react with the first conductive layer, resulting in a bulging phenomenon around the pad 2, thereby affecting the product performance.

[0056] Based on this, the present exemplary embodiment provides a light-emitting substrate, as Figure 3As shown in the figure, it is a schematic structural diagram of an exemplary embodiment of the present light-emitting substrate. Among them, the light-emitting substrate may include: a substrate 100, a first conductive layer, a first inorganic passivation layer PVX1, and a plurality of pads 2. The first conductive layer is located on one side of the substrate 100, and the first conductive layer includes a first connection portion 11; the first inorganic passivation layer PVX1 is located on the side of the first conductive layer facing away from the substrate 100, and a first through hole H1 is formed on the first inorganic passivation layer PVX1. The orthographic projection of the first through hole H1 on the substrate and the orthographic projection of the first connection portion 11 on the substrate at least partially overlap; the pad 2 includes a via connection portion 21 and a welding portion 22 connected to each other. The welding portion 22 is located on the side of the first inorganic passivation layer PVX1 facing away from the substrate 100, and the via connection portion 21 is disposed through the first through hole H1 to be connected to the first connection portion 11; wherein, the first through hole H1 includes an opening H11 on the side facing away from the substrate, the welding portion 22 covers the opening H11, and the edge of the orthographic projection of the welding portion 22 on the substrate 100 and the edge of the orthographic projection of the opening H11 on the substrate 100 form an annular structure.

[0057] On the one hand, in this exemplary embodiment, the first organic layer in the related art is removed, and the pad 2 is directly formed on the side of the first inorganic passivation layer PVX1 facing away from the substrate 100. Since the inorganic passivation layer and the pad 2 have good bonding strength, no crack will occur between the first inorganic passivation layer PVX1 and the pad 2. Therefore, this exemplary embodiment can reduce the risk of solder paste flowing into the first conductive layer; on the other hand, in this exemplary embodiment, the first organic layer is removed, so that the depth of the first through hole H1 is smaller. When forming the pad 2 by the electroless gold plating process, the pad material can grow outside the first through hole H1 more easily. The pad material grown outside the first through hole H1 can expand outward in a direction parallel to the substrate 100 to form a pad with a "mushroom" structure. Therefore, the welding portion 22 not only covers the opening H11, but also covers a part of the first inorganic passivation layer PVX1 around the opening H11. Therefore, the welding portion 22 can further reduce the risk of solder paste flowing into the first conductive layer.

[0058] In this exemplary embodiment, as Figure 4 shown, it is an electron microscope image in an exemplary embodiment of the present light-emitting substrate. According to Figure 4 it can be seen that in this exemplary embodiment, the pad 2 and the first inorganic passivation layer PVX1 are closely attached, and the solder paste cannot enter the first conductive layer.

[0059] In this exemplary embodiment, the light-emitting substrate can operate continuously for at least 1500 h without lamp-off or other corrosion problems under the condition of 85 °C and 85% humidity environment after the module process is completed and the sample is in the on-state.

[0060] In this exemplary embodiment, the light-emitting substrate can be used to form a backlight module, and the backlight module can be used for an LCD display panel. As Figure 5 , 6 shown, Figure 5 is a partial top view of an exemplary embodiment of the disclosed light-emitting substrate, Figure 6 is another partial top view of an exemplary embodiment of the disclosed light-emitting substrate. The light-emitting substrate may further include a light-emitting chip LED and a driving chip IC, and the driving chip IC can be used to drive the light-emitting chip LED to emit light. In this exemplary embodiment, some pads 2 can be used for soldering with the light-emitting chip LED, and some pads 2 can be used for soldering with the driving chip IC.

[0061] In this exemplary embodiment, as Figure 7 shown, it is a schematic structural diagram of another exemplary embodiment of the disclosed light-emitting substrate. The light-emitting substrate may further include: a second conductive layer 12, the second conductive layer 12 is located between the substrate 100 and the first conductive layer, and at least part of the structure of the second conductive layer 12 and at least part of the structure of the first conductive layer are connected through vias. Among them, part of the structure of the second conductive layer can be used to form a plurality of signal lines. For example, the plurality of signal lines may include a power line and a data line. The data line can be used to provide a data signal to the driving chip IC, and the power line can be used to provide a high / low power signal to the light-emitting chip LED or the driving chip IC. Some first connection parts 11 can be bridged between the signal lines located in the second conductive layer and the pads 2.

[0062] In this exemplary embodiment, as Figure 7 shown, the light-emitting substrate may further include: a fifth inorganic passivation layer PVX5, a third inorganic passivation layer PVX3, a second organic layer OC2, and a fourth inorganic passivation layer PVX4. Among them, the substrate 100, the fifth inorganic passivation layer PVX5, the second conductive layer 12, the third inorganic passivation layer PVX3, the second organic layer OC2, the fourth inorganic passivation layer PVX4, the first conductive layer, and the first inorganic passivation layer PVX1 are stacked in sequence.

[0063] Figure 7 The light-emitting substrate shown adopts a double-layer conductive layer architecture, and the signal lines are arranged in the second conductive layer. It should be understood that in other exemplary embodiments, the light-emitting substrate can also adopt a single conductive layer architecture, and the signal lines can also be located in the first conductive layer.

[0064] In this exemplary embodiment, as Figure 8As shown, it is a schematic structural diagram of another exemplary embodiment of the disclosed light-emitting substrate. The light-emitting substrate may further include: a second inorganic passivation layer PVX2 and a first organic layer OC1. The second inorganic passivation layer PVX2 is located between the first inorganic passivation layer PVX1 and the first conductive layer; the first organic layer OC1 is located between the second inorganic passivation layer PVX2 and the first inorganic passivation layer PVX1; wherein, a second through-hole H2 is formed on the second inorganic passivation layer PVX2 and the first organic layer OC1, and the via connection portion 21 passes through the second through-hole H2 to be connected to the first connection portion 11. Relative to Figure 1 the related art shown, in this exemplary embodiment, a first inorganic passivation layer PVX1 is added between the first organic layer OC1 and the welding portion 22. There is a good degree of adhesion between the first inorganic passivation layer PVX1 and the pad 2, and this setting can also reduce the risk of solder paste entering the first conductive layer. In addition, the first organic layer OC1 has a planarization effect, thereby improving the flatness of the light-emitting substrate.

[0065] In this exemplary embodiment, as Figure 8 shown, the first organic layer OC1 can be thinned to facilitate the formation of the "mushroom" structure pad through the immersion gold process. Wherein, the ratio of the thickness of the second inorganic passivation layer PVX2 to the thickness of the first organic layer OC1 is greater than or equal to 1 / 10 and less than or equal to 1. For example, the ratio of the thickness of the second inorganic passivation layer PVX2 to the thickness of the first organic layer OC1 can be equal to 1 / 10, 2 / 10, 3 / 10, 4 / 10, 5 / 10, 6 / 10, 7 / 10, 8 / 10, 9 / 10, 1, etc. The thickness of the first organic layer OC1 can be less than or equal to 2μm. For example, the thickness of the first organic layer OC1 can be equal to 0.5μm, 1μm, 1.1μm, 1.2μm, 1.3μm, 1.4μm, 1.5μm, 1.6μm, 1.7μm, 1.8μm, 1.9μm, 2μm, etc.

[0066] It should be noted that Figure 8 the light-emitting substrate shown can also adopt Figure 7 the double conductive layer structure shown. That is Figure 8 the light-emitting substrate shown may include a substrate substrate 100, a fifth inorganic passivation layer PVX5, a second conductive layer 12, a third inorganic passivation layer PVX3, a second organic layer OC2, a fourth inorganic passivation layer PVX4, a first conductive layer, a second inorganic passivation layer PVX2, a first organic layer OC1, and a first inorganic passivation layer PVX1 which are sequentially stacked.

[0067] In this exemplary embodiment, as Figure 3 、 7, as shown in FIGS. 8, the substrate 100 may be a glass substrate. It should be understood that in other exemplary embodiments, the substrate 100 may also be a PCB substrate, and the materials of the PCB substrate may include one or more of phenolic resin, epoxy resin, polyimide, polytetrafluoroethylene, polyphenylene ether, polyester, and polycarbonate.

[0068] In this exemplary embodiment, the material of the first conductive layer includes copper, and copper easily reacts with solder paste. It should be understood that the material of the first conductive layer may also be other metal materials. In this exemplary embodiment, the materials of the first inorganic passivation layer PVX1, the second inorganic passivation layer PVX2, the third inorganic passivation layer PVX3, the fourth inorganic passivation layer PVX4, and the fifth inorganic passivation layer PVX5 may include one or more of silicon oxide, silicon nitride, and aluminum oxide. The inorganic passivation layer PVX has an insulating effect.

[0069] In this exemplary embodiment, as Figure 3 , 7 , as shown in FIGS. 8, the welding part 22 may further include a main body part 221 and an anti-oxidation layer 222. The main body part 221 is connected to the via connection part 21. The anti-oxidation layer 222 covers the end face 2211 of the main body part 221 facing away from the first inorganic passivation layer PVX1, and covers the side face 2212 of the main body part 221 connected to the end face 2211. That is, the anti-oxidation layer 222 covers the surface of the main body part exposed outside the first inorganic passivation layer PVX1, and the anti-oxidation layer 222 can prevent the main body part 221 from being oxidized. The thickness of the anti-oxidation layer 222 may be 30nm - 70nm. For example, the thickness of the anti-oxidation layer 222 may be equal to 30nm, 40nm, 50nm, 60nm, 70nm, etc.

[0070] In this exemplary embodiment, the materials of the via connection part 21 and the main body part 221 may include nickel, and the material of the anti-oxidation layer 222 may include gold. It should be understood that in other exemplary embodiments, the materials of the via connection part 21 and the main body part 221 may also include copper, tin, etc., and the material of the anti-oxidation layer 222 may also include zinc, silver, etc.

[0071] In this exemplary embodiment, as Figure 3 , 7 , as shown in FIGS. 8, the welding part 22 includes a body part 223 and an annular extension part 224. The annular extension part 224 is disposed around the body part 223. The orthographic projection of the body part 223 on the substrate coincides with the orthographic projection of the opening H11 on the substrate, and the orthographic projection of the annular extension part 224 on the substrate coincides with the annular structure; wherein, the annular extension part 224 is attached to the side face of the first inorganic passivation layer PVX1 facing away from the substrate. This setting can reduce the risk of solder paste entering the first conductive layer.

[0072] In this exemplary embodiment, asFigure 3 , 7 8, the width d2 of the annular structure is greater than or equal to 2μm and less than or equal to 6μm. For example, the width d2 of the annular structure can be equal to 2μm, 3μm, 4μm, 5μm, 6μm, etc. If the width d2 of the annular structure is too small, the sealing effect of the annular extension 224 on the opening H11 is poor; if the width d2 of the annular structure is too large, the size of the pad is large, the cost of the light-emitting substrate is high, and adjacent pads 2 are easily short-circuited. In this exemplary embodiment, the width d2 of the annular structure is set to a suitable size, which can not only ensure the sealing effect of the annular extension 224 on the opening H11, but also save costs and improve the structural stability of the light-emitting substrate.

[0073] In this exemplary embodiment, Figure 3 , 7 As shown in FIG. 8 , the materials of the first organic layer OC1 and the second organic layer OC2 may include one or more of polyester organic matter, epoxy resin, and organic silicone.

[0074] In this exemplary embodiment, both the first conductive layer and the second conductive layer may be provided with a protective layer. Figure 3 , 7 As shown in Figure 8, a first protective layer 51 may be provided on the side of the first conductive layer facing the substrate, a second protective layer 52 may be provided on the side of the first conductive layer facing away from the substrate, a third protective layer 53 may be provided on the side of the second conductive layer facing the substrate, and a fourth protective layer 54 may be provided on the side of the second conductive layer facing away from the substrate. The protective layer is removed from the position where the first connecting portion 11 is used to connect with the pad 2. The protective layer may be a MoNb layer or a molybdenum-titanium-nickel (MTD) layer. The protective layer has an anti-oxidation effect and can be used to prevent the first conductive layer and the second conductive layer from being oxidized, wherein the protective layers on both sides of the first conductive layer can be etched together with the first conductive layer through a single etching process, and the protective layers on both sides of the second conductive layer can be etched together with the second conductive layer through a single etching process.

[0075] In this exemplary embodiment, the method for manufacturing the light-emitting substrate may include: providing a base substrate 100; forming a conductive material layer on the base substrate, etching the conductive material layer to form a first conductive layer, the first conductive layer including a first connecting portion 11; forming an inorganic passivation material layer on the side of the first conductive layer away from the base substrate, etching the inorganic passivation material layer to form a first through hole H1 on the inorganic passivation material layer, so that at least part of the structure of the first connecting portion 11 is exposed outside the inorganic passivation material layer.

[0076] In this exemplary embodiment, Figure 3 , 7, as shown in FIGS. 8, the pad 2 can be formed by an electrochemically self-growing process. The electrochemically self-growing process can include: First, the first connection portion 11 exposed outside the inorganic passivation material layer can be cleaned. For example, the first connection portion 11 can be cleaned with an acid solution or an alkali solution to remove dirt on the first connection portion 11; then, the first connection portion 11 exposed outside the inorganic passivation material layer can be micro-etched to increase the surface roughness and activity of the first connection portion 11 exposed outside the inorganic passivation material layer, so that the first connection portion 11 and the subsequent activation layer can adhere; then, the first connection portion 11 exposed outside the inorganic passivation material layer can be subjected to an activation treatment. For example, the first connection portion 11 can be immersed in an activation solution (such as a palladium salt solution), so that an activation layer (such as a palladium layer) can be formed on the surface of the first connection portion 11; then, the first connection portion 11 can be immersed in a nickel plating solution. Palladium element acts as a catalyst for gold, and nickel ions will be reduced to nickel metal and adhere to the surface of the first connection portion. Among them, due to the small depth of the first through hole H1, after the nickel layer generated inside the first through hole H1 exceeds the opening H11, it will expand outward in a direction parallel to the substrate, so as to form an annular epitaxial portion 224. Among them, the nickel structure located in the first through hole H1 can form a via connection portion 21, and the nickel structure located outside the opening H11 can form the main body portion 221 of the welding portion; finally, the first connection portion 11 can be immersed in a gold plating solution, and nickel will reduce gold ions to gold metal and adhere to the surface of the nickel layer, and the gold layer can form an anti-oxidation layer.

[0077] It should be noted that, based on the above process method, the shape of the positive projection (annular structure) of the annular epitaxial portion 224 on the substrate is related to the shape of the opening H11. The annular structure can be in the shape of a circular ring, a rectangular ring, an elliptical ring, etc. In addition, the widths of different positions of the annular structure can be the same or slightly different.

[0078] In this exemplary embodiment, as Figure 3 , 7 , as shown in FIGS. 8, the height h1 of the via connection portion 21 in the direction perpendicular to the substrate 100 is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms. For example, the height h1 of the via connection portion 21 in the direction perpendicular to the substrate 100 can be equal to 2000 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms, 8000 angstroms, 9000 angstroms, 10000 angstroms, etc. If h1 is too small, the first inorganic passivation layer PVX1 is too thin, and the insulation effect of the first inorganic passivation layer PVX1 is poor. If h1 is too large, when nickel plating, it is difficult for nickel to exceed the opening H11, so it is difficult to form the annular epitaxial portion 224. At the same time, if h1 is too large, the via connection portion 21 is also prone to breakage. In this exemplary embodiment, h1 is set to a suitable size, which can not only facilitate the formation of the pad with a "mushroom" structure, but also improve the structural stability of the via connection portion 21.

[0079] In this exemplary embodiment, as shown in Figure 3 , 7 and 8, the geometric diameter of the positive projection of the via connection portion 21 on the substrate 100 is d1, and the height of the via connection portion 21 in the direction perpendicular to the substrate is h1. d1 / h1 is greater than or equal to 3 and less than or equal to 500. For example, d1 / h1 can be equal to 3, 10, 20, 40, 60, 80, 100, 200, 300, 400, 500, etc. Herein, the geometric diameter of the positive projection of the via connection portion 21 on the substrate 100 is the diameter of the minimum circumscribed circle of the positive projection of the via connection portion 21 on the substrate 100.

[0080] In this exemplary embodiment, as shown in Figure 3 , 7 and 8, the ratio of the thickness h2 of the welding portion 22 in the direction perpendicular to the substrate 100 to the thickness h1 + h2 of the pad 2 in the direction perpendicular to the substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4. For example, h2 / (h1 + h2) can be equal to 1 / 4, 2 / 4, 3 / 4, etc. h2 can be equal to 1μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm, 2μm, etc.

[0081] In this exemplary embodiment, as shown in Figure 3 , 7 and 8, the via connection portion 21 is filled in the first through hole H1. The via connection portion 21 includes a first side wall 211 opposite to the inner wall of the first through hole H1. The angle β formed between the first side wall 211 and the substrate 100 is greater than 90° and less than or equal to 130°. For example, β can be equal to 92°, 95°, 98°, 100°, 105°, 110°, 115°, 120°, 125°, 130°, etc.

[0082] It should be understood that the above light-emitting substrate can also be used to form a display panel. The pads on the light-emitting substrate can be used to bond light-emitting chips, and the light-emitting chips can be used to directly display images.

[0083] This exemplary embodiment further provides a method for manufacturing a light-emitting substrate. The manufacturing method includes:

[0084] Providing a substrate;

[0085] Forming a conductive material layer on the substrate, and etching the conductive material layer to form a first conductive layer, where the first conductive layer includes a first connection portion;

[0086] An inorganic passivation material layer is formed on the side of the first conductive layer facing away from the substrate, and the inorganic passivation material layer is etched to form a first inorganic passivation layer. A first through hole is formed in the first inorganic passivation layer, so that at least part of the structure of the first connection portion is exposed outside the inorganic passivation material layer;

[0087] The first connection portion exposed outside the inorganic passivation material layer is subjected to an activation treatment to form an activation layer on the side of the first connection portion facing away from the substrate;

[0088] A metal structure is grown on the side of the activation layer facing away from the substrate to form a pad. The pad includes a via connection portion and a welding portion connected to each other. The welding portion is located on the side of the first inorganic passivation layer facing away from the substrate, and the via connection portion penetrates through the first through hole to be connected to the first connection portion;

[0089] Wherein, the first through hole includes an opening on the side facing away from the substrate, the welding portion covers the opening, and an annular structure is formed by the edge of the positive projection of the welding portion on the substrate and the edge of the positive projection of the opening on the substrate.

[0090] The manufacturing method of the light-emitting substrate can form the above-mentioned light-emitting substrate.

[0091] It should be noted that the drawing ratios in the present disclosure can be used as a reference in actual processes, but are not limited thereto. For example, the aspect ratio of the channel, the thickness and spacing of each film layer, and the width and spacing of each signal line can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the numbers shown in the figures. The drawings described in the present disclosure are only schematic diagrams. In addition, the qualifiers such as first and second are only used to define different structural names and do not have the meaning of a specific order.

[0092] This exemplary embodiment also provides a display device, which includes the above-mentioned light-emitting substrate. The display device can be a display device such as a mobile phone, a tablet computer, or a television.

[0093] Those skilled in the art will readily think of other embodiments of the present disclosure after considering the specification and practicing the content disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure, which follow the general principles of the present disclosure and include known common knowledge or conventional technical means in the technical field not disclosed in the present disclosure. The specification and embodiments are only regarded as exemplary, and the true scope and spirit of the present disclosure are pointed out by the claims.

[0094] It should be understood that the present disclosure is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present disclosure is only defined by the appended claims.

Claims

1. A light-emitting substrate, wherein: The light-emitting substrate comprises: substrate substrate; A first conductive layer, located on one side of the base substrate, wherein the first conductive layer includes a first connecting portion; a first inorganic passivation layer, located on a side of the first conductive layer away from the base substrate, a first through hole being formed on the first inorganic passivation layer, an orthographic projection of the first through hole on the base substrate and an orthographic projection of the first connecting portion on the base substrate at least partially overlapping; A plurality of pads, each pad comprising a via connection portion and a welding portion connected to each other, the welding portion being located on a side of the first inorganic passivation layer away from the base substrate, and the via connection portion being arranged through the first through hole to be connected to the first connection portion; The first through hole includes an opening facing away from the base substrate, the welding portion covers the opening, and an edge of the orthographic projection of the welding portion on the base substrate and an edge of the orthographic projection of the opening on the base substrate form an annular structure.

2. The light-emitting substrate according to claim 1, wherein: The welding portion comprises a main body portion and an annular extension portion, wherein the annular extension portion is arranged around the main body portion, the orthographic projection of the main body portion on the substrate coincides with the orthographic projection of the opening on the substrate, and the orthographic projection of the annular extension portion on the substrate coincides with the annular structure; The annular extension portion is bonded to a side surface of the first inorganic passivation layer that is away from the base substrate.

3. The light-emitting substrate according to claim 1, wherein: The width of the annular structure is greater than or equal to 2 μm and less than or equal to 6 μm.

4. The light-emitting substrate according to claim 1, wherein: The height of the via connection portion in a direction perpendicular to the substrate is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms.

5. The light emitting substrate according to claim 1, wherein: The geometric diameter of the orthographic projection of the via hole connection portion on the substrate is d1, the height of the via hole connection portion in a direction perpendicular to the substrate is h1, and d1 / h1 is greater than or equal to 3 and less than or equal to 500.

6. The light emitting substrate according to claim 1, wherein: A ratio of a thickness of the welding portion in a direction perpendicular to the base substrate to a thickness of the welding pad in a direction perpendicular to the base substrate is greater than or equal to 1 / 4 and less than or equal to 3 / 4.

7. The light-emitting substrate according to claim 1, wherein: The via connection portion is filled in the first through hole, and the via connection portion includes a first side wall opposite to the inner wall of the first through hole, and an angle formed between the first side wall and the base substrate is greater than 90° and less than or equal to 130°.

8. The light emitting substrate according to claim 1, wherein: The welding part includes a main body and an anti-oxidation layer, the main body is connected to the via connecting part, the anti-oxidation layer covers the end face of the main body away from the first inorganic passivation layer, and covers the side face of the main body connected to the end face.

9. The light emitting substrate according to claim 8, wherein: The materials of the via connection part and the main body part include nickel, and the material of the oxidation protection layer includes gold.

10. The light emitting substrate according to claim 1, wherein: The material of the first inorganic passivation layer includes one or more of silicon oxide, silicon nitride, and aluminum oxide; And / or, the material of the first conductive layer includes copper.

11. The light emitting substrate according to claim 1, wherein: The light-emitting substrate further comprises: A second conductive layer, wherein the second conductive layer is located between the base substrate and the first conductive layer, and at least a portion of the structure of the second conductive layer is connected to at least a portion of the structure of the first conductive layer through a via hole.

12. The light-emitting substrate according to any one of claims 1 to 11, wherein: The light-emitting substrate further comprises: a second inorganic passivation layer, located between the first inorganic passivation layer and the first conductive layer; a first organic layer, located between the second inorganic passivation layer and the first inorganic passivation layer; A second through hole is formed on the second inorganic passivation layer and the first organic layer, and the via connection portion is arranged to penetrate the second through hole to be connected with the first connection portion.

13. The light emitting substrate according to claim 12, wherein: A ratio of a thickness of the second inorganic passivation layer to a thickness of the first organic layer is greater than or equal to 1 / 10 and less than or equal to 1.

14. The light-emitting substrate according to any one of claims 1 to 11, wherein: The light-emitting substrate is used to form a backlight module, or the light-emitting substrate is used to form a display panel.

15. The light-emitting substrate according to any one of claims 1 to 11, wherein: The light-emitting substrate further comprises a light-emitting chip and a driving chip, wherein the driving chip is used to drive the light-emitting chip to emit light, and part of the pads are used to be welded to the light-emitting chip, and part of the pads are used to be welded to the driving chip; Alternatively, the light-emitting substrate further includes a light-emitting chip, and the solder pad is used for soldering to the light-emitting chip.

16. A method for manufacturing a light-emitting substrate, wherein: The production method comprises: Providing a substrate; Forming a conductive material layer on the base substrate, and etching the conductive material layer to form a first conductive layer, wherein the first conductive layer includes a first connecting portion; forming an inorganic passivation material layer on a side of the first conductive layer away from the base substrate, etching the inorganic passivation material layer to form a first inorganic passivation layer, wherein a first through hole is formed on the first inorganic passivation layer, so that at least a part of the structure of the first connecting portion is exposed outside the inorganic passivation material layer; Performing an activation treatment on the first connecting portion exposed outside the inorganic passivation material layer to form an activation layer on a side of the first connecting portion away from the substrate; Growing a metal structure on a side of the activation layer away from the substrate to form a pad, the pad comprising a via connection portion and a welding portion connected to each other, the welding portion being located on a side of the first inorganic passivation layer away from the substrate, the via connection portion penetrating the first through hole to be connected to the first connection portion; The first through hole includes an opening facing away from the base substrate, the welding portion covers the opening, and an edge of the orthographic projection of the welding portion on the base substrate and an edge of the orthographic projection of the opening on the base substrate form an annular structure.

17. A display device, wherein: The display device comprises the light-emitting substrate according to any one of claims 1-15.

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