Gas uniform heating device for PECVD (plasma enhanced chemical vapor deposition) equipment
By integrating the heater of the PECVD equipment with the gas uniform structure into one module, the problems of low heating efficiency, poor temperature uniformity and uneven gas introduction are solved, efficient gas heating and uniform distribution are achieved, and the reliability and space utilization of the equipment are improved.
Patent Information
- Application Number
- CN202421693279.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-17
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2034-07-17
AI Technical Summary
The existing PECVD equipment has low heating efficiency and poor temperature uniformity. The gas introduction device has a single structure and cannot evenly distribute gas. The gas introduction device and the heater are two independent modules, occupying a large space, and the gas is not heated, so the temperature drops when it comes into contact with the silicon wafer.
The heater and the gas uniform structure are fused into a module, which has heating and gas uniform functions. The gas comes out evenly from several spray ports through the flow guide structure on the heater and has been heated to a certain temperature.
It improves the utilization rate of the interior space of the chamber and simplifies installation and maintenance work. The device structure is simple, reliable, and has low cost, which greatly saves costs and improves work efficiency.
Smart Images
Figure CN223003021U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of PECVD equipment, and particularly relates to a gas heat homogenizing device for PECVD equipment. Background Technique
[0002] PEVCD: Plasma Enhanced Chemical Vapor Deposition. It uses low-temperature plasma to generate glow discharge in a vacuum environment, and then introduces an appropriate amount of chemical gas. The gas undergoes a series of chemical reactions and plasma reactions, and finally a solid film is formed on the surface of the silicon wafer.
[0003] Gas heat homogenizing device: It is a vacuum heater that heats and raises the temperature of the pre-coated silicon wafer. In order to improve the heating efficiency and the consistency of the surface temperature of the heated silicon wafer, a functional structure for gas introduction and uniform flow distribution is designed and embedded in the heater structure, and the thermal motion of gas molecules is used to improve the heating efficiency and temperature uniformity.
[0004] Two existing common heating methods:
[0005] 1. Simultaneously use contact heat conduction and vacuum radiation for heating and temperature raising. That is, the silicon wafer is transported to the vacuum heating chamber through a carrier and is placed statically in a heating environment with a pre-set temperature for rapid heating.
[0006] 2. On the basis of simultaneously using contact heat conduction and vacuum radiation for heating, a certain flow rate of gas is also introduced, but the gas diversion device and the heater are two independent modules.
[0007] But there are some problems: 1. The heating efficiency is low and the temperature uniformity is poor; 2. The structure of the gas introduction device is single and the gas cannot be evenly distributed; 3. The gas introduction device and the heater are two sets of independent devices, which require a larger internal space in the chamber, and the gas coming out of the spray nozzle has not been heated, and the temperature of the gas will drop instantly when it contacts the silicon wafer. Content of the Utility Model
[0008] Aiming at the deficiencies of the existing background technique, the purpose of the utility model is to provide a gas heat homogenizing device for PECVD equipment with a simple structure and convenient use. The utility model integrates the heater and the gas flow homogenizing structure into one module, so that it has both heating and gas flow homogenizing functions at the same time. The gas uniformly comes out from several spray nozzles through the diversion structure on the heater, and the gas coming out has been heated to a certain temperature; moreover, the utilization rate of the internal space of the chamber is improved, and the workload of installation and maintenance is simplified to a certain extent; the gas heat homogenizing device for PECVD equipment has a simple structure, strong reliability, and low cost, greatly saving costs and improving work efficiency.
[0009] To achieve the above, the technical solution of the present utility model is: A gas heat - equalizing device for PECVD equipment, including a heating component and a gas introduction component, characterized in that: it further includes a gas flow - equalizing plate and a jet nozzle. The heating component is a sheathed heater component. The gas flow - equalizing plate is installed on the sheathed heater component and is interconnected. The gas introduction component is installed on the heating plate of the heating component. The gas introduction component is connected to the jet nozzle through the gas flow - equalizing plate and the heating component. The jet nozzle is installed below the heating plate of the heating component.
[0010] Further, the heating component includes a heating plate, sheathed heating wires and thermocouples. The heating plate includes a cover plate and a back plate. The cover plate and the back plate are buckled together. The sheathed heating wires and thermocouples are arranged between the cover plate and the back plate.
[0011] Further, the back plate is provided with support columns for connecting to the cavity. Both the cover plate and the back plate are provided with long slot holes for installing the support columns. The support columns are fixedly connected to the heating plate through height - equalizing bolts sequentially passing through the long slot holes on the cover plate and the back plate.
[0012] Further, according to the arrangement range of silicon wafers, four planes with a depth of 2 mm are processed on the upper surface of the back plate. The four plane areas are arranged in a cross - shaped pattern. A number of ventilation holes for air passage are evenly arranged within each plane area. At the same time, there are threaded blind holes for fixing the gas flow - equalizing plate. The cover plate is provided with a number of tapered counter - sunk holes. The distribution of the counter - sunk holes corresponds to and is interconnected with the distribution of the ventilation holes.
[0013] Further, the lower surface of the gas flow - equalizing plate is provided with flow - guiding grooves. The center of the gas flow - equalizing plate is provided with a center hole. The center hole is communicated with the flow - guiding grooves. The flow - guiding grooves are symmetrically distributed on both sides along the x or y - axis direction starting from the center hole and fission according to the exponential growth principle. Each time of fission, the number of flow - guiding grooves increases by a certain multiple. The final number of fissioned flow - guiding grooves is the same as the number of ventilation holes in a single plane area on the back plate.
[0014] Further, the end of the flow - guiding groove ends with a circular groove. The circular grooves at the ends of the flow - guiding grooves correspond to and are concentric with the ventilation holes on the back plate. The paths from the center of the gas flow - equalizing plate to the ends of each flow - guiding groove are equal.
[0015] Further, the gas flow - equalizing plate is assembled with the plane area on the upper surface of the back plate to form a relatively closed air flow channel. The end of the channel corresponds to the ventilation holes on the back plate. A number of ventilation holes are evenly distributed in the area directly above the silicon wafers. Each ventilation hole is installed with a gas jet nozzle.
[0016] Further, the gas introduction component includes a gas distribution shaft seal seat, a connecting air pipe, an air inlet block, and a ferrule joint. The bottom of the gas distribution shaft seal seat is mounted on the back plate, and the upper end of the gas distribution shaft seal seat is hermetically connected to the wall of the vacuum chamber. The air inlet block is connected to the center of the gas flow equalizing plate. One end of the connecting air pipe is connected to the gas distribution shaft seal seat through a ferrule joint, and the other end of the connecting air pipe is connected to the air inlet block through a ferrule joint.
[0017] Further, the gas distribution shaft seal seat is provided with a blind hole I in the axial direction, and two threaded holes perpendicular to the blind hole I are provided at the end of the blind hole I. The threaded holes communicate with the blind hole I. One end of the connecting air pipe is connected to the gas distribution shaft seal seat through a ferrule joint and is fitted with the threaded hole.
[0018] Further, the air inlet block is of a polygonal structure, and a blind hole II is provided at the center in the thickness direction of the air inlet block. A threaded hole communicating with the blind hole II is provided on the side of the blind hole II. One end of the ferrule joint is connected to the air inlet block through cooperation with the threaded hole and communicates with the blind hole II. The blind hole II communicates with the central hole of the gas flow equalizing plate. The other end of the ferrule joint is connected to the connecting air pipe; a U-shaped bend is provided in the middle area of the connecting air pipe.
[0019] The advantages of adopting the technical solution of the present utility model are as follows:
[0020] The present utility model integrates the heater and the gas flow equalizing structure into one module, enabling it to have both heating and gas flow equalizing functions at the same time. The gas uniformly comes out from a plurality of spray nozzles through the diversion structure on the heater, and the gas coming out has been heated to a certain temperature; moreover, the utilization rate of the internal space of the chamber is improved, and the workload of installation and maintenance is simplified to a certain extent; the gas heat equalizing device for PECVD equipment has a simple structure, strong reliability, and low cost, greatly saving costs and improving work efficiency. Brief Description of the Drawings
[0021] In order to more clearly illustrate the technical solutions in the present utility model or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only those of the present utility model. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.
[0022] Figure 1 It is a schematic structural diagram of the gas heat equalizing device of the present utility model;
[0023] Figure 2 It is a schematic diagram of the gas introduction component of the present utility model;
[0024] Figure 3 It is a cross-sectional view of the gas distribution shaft seal seat of the present utility model;
[0025] Figure 4 Schematic diagram of the intake block structure of the present utility model;
[0026] Figure 5 Schematic diagram of the back side of the gas flow equalizing plate of the present utility model;
[0027] Figure 6 Schematic diagram of the jet nozzle structure of the present utility model;
[0028] Figure 7 Schematic diagram of the connection of the support columns of the present utility model.
[0029] The markings in the above figures are respectively: 1, heating assembly; 11, cover plate; 111, countersunk hole; 12, back plate; 121, ventilation hole; 14, support column; 15, long slot hole; 2, gas introduction assembly; 21, gas distribution shaft seal seat; 211, blind hole I; 22, connecting air pipe; 23, intake block; 231, blind hole II; 24, ferrule joint; 3, gas flow equalizing plate; 31, diversion groove; 32, central hole; 4, jet nozzle. Specific embodiments
[0030] To make the objectives, technical solutions and advantages of the present utility model clearer and more understandable, the present utility model will be further described in detail below in conjunction with specific embodiments.
[0031] It should be noted that unless otherwise defined, the technical terms or scientific terms used in the present utility model should have the ordinary meanings understood by those with ordinary skills in the field to which the present utility model belongs. The "first", "second" and similar words used in the present utility model do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "including" or "comprising" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. Words such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Upper", "lower", "left", "right", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.
[0032] Such as Figures 1 to 7As shown in the figure, a gas heat - uniforming device for PECVD equipment includes a heating component 1 and a gas introduction component 2, and also includes a gas flow - uniforming plate 3 and a jet nozzle 4. The heating component 1 is a sheathed heater component. The gas flow - uniforming plate 3 is installed on the sheathed heater component and is interconnected with it. The gas introduction component 2 is installed on the heating plate of the heating component 1. The gas introduction component 2 is connected to the jet nozzle 4 through the gas flow - uniforming plate 3 and the heating component 1. The jet nozzle 4 is installed below the heating plate of the heating component 1. The utility model integrates the heater and the gas flow - uniforming structure into one module, enabling it to have both heating and gas flow - uniforming functions at the same time. The gas uniformly comes out from several spray openings through the flow - guiding structure on the heater, and the gas coming out has been heated to a certain temperature. Moreover, it improves the utilization rate of the internal space of the chamber and simplifies the workload of installation and maintenance to a certain extent. The gas heat - uniforming device for PECVD equipment has a simple structure, strong reliability, and low cost, greatly saving costs and improving work efficiency.
[0033] The main structure of the device is a heating plate assembly, and the size of the heating plate is determined according to the maximum outer dimension of the silicon wafer arrangement. The heating plate is divided into multiple heating zones according to the chamber structure, and each zone is independently temperature - controlled by PID.
[0034] The heating component 1 includes a heating plate, sheathed heating wires, and thermocouples. The heating plate includes a cover plate 11 and a back plate 12. The cover plate 11 and the back plate 12 are buckled together, and the sheathed heating wires and thermocouples are arranged between the cover plate 11 and the back plate 12. Specifically, the heating plate is assembled by two layers of flat plates. The lower - layer plate is thinner and is called the cover plate, and the upper - layer plate is thicker and is called the back plate. The sheathed heating wires and thermocouples are arranged between the two layers of plates.
[0035] The back plate 12 is provided with support columns 14 for connecting with the cavity. Both the cover plate 11 and the back plate 12 are provided with long slot holes 15 for installing the support columns 14. The support columns 14 are fixedly connected to the heating plate through equal - height bolts sequentially passing through the long slot holes 15 on the cover plate 11 and the back plate 12.
[0036] Specifically, the back plate is designed with a support column installation structure for connecting with the cavity. Considering that the heating plate will extend around with the center of the plate as the heat source after heating up, two rows of long slot holes for connecting support columns are distributed on the x - and y - center lines of the heating plate, and several long slot holes diverging from the center of the plate to the periphery are distributed on the four edges. The heating plate and the support columns are connected by equal - height screws, and a small gap is ensured at the connection. When thermally expanding, the heating plate can freely extend along the long slot holes.
[0037] On the upper surface of the backplane 12, four planes with a depth of 2 mm are machined according to the arrangement range of the silicon wafers. The four plane areas are arranged in a cross shape. Within each plane area, a number of vent holes 121 for ventilation are evenly arranged. At the same time, there are also threaded blind holes for fixing the gas flow equalizing plate. On the cover plate 11, a number of tapered counterbore holes 111 are provided. The distribution of the counterbore holes 111 corresponds to and is interconnected with the distribution of the vent holes 121.
[0038] Specifically, on the upper surface of the backplane, four planes with a depth of about 2 mm are machined according to the arrangement range of the silicon wafers. The four plane areas are arranged in a cross shape. Within each plane area, a number of through holes for ventilation are evenly arranged. At the same time, there are also threaded blind holes for fixing the flow equalizing plate. There are also long slot holes on the cover plate, and the distribution of the slot holes corresponds one by one to the slot holes on the backplane. At the same time, there are also a number of tapered counterbore through holes, and the distribution of the counterbore holes is consistent with the vent holes on the backplane.
[0039] On the lower surface of the gas flow equalizing plate 3, a flow guiding groove 31 is provided. At the center of the gas flow equalizing plate 3, a central hole 32 is provided. The central hole 32 communicates with the flow guiding groove 31. The flow guiding groove 31 is symmetrically distributed on both sides along the x or y axis direction with the central hole 32 as the starting point, and fissions according to the exponential growth principle. Each time it fissions, the number of flow guiding grooves increases by 2 times. The final number of fissions of the flow guiding groove 31 is the same as the number of vent holes 121 in a single plane area on the backplane 12.
[0040] The end of the flow guiding groove 31 ends with a circular groove. The circular groove at the end of the flow guiding groove 31 corresponds one by one to the vent holes on the backplane and remains concentric. The path from the center of the gas flow equalizing plate 3 to the end of each flow guiding groove is equal.
[0041] Specifically, on the lower surface of the flow equalizing plate (the surface in contact with the 4 plane areas of the backplane), flow guiding grooves with a certain depth are designed. There is a round hole in the center of the plate that penetrates the groove. The flow guiding grooves are symmetrically distributed on both sides along the x or y axis direction with the central hole of the flow guiding groove as the starting point, and fission according to the exponential growth principle. Each time it fissions, the number of flow guiding grooves increases by 2 times, but the width of the groove decreases a little each time (about 0.8). The final number of fissions of the flow guiding groove is the same as the number of vent holes in a single plane area on the backplane. The end of each flow guiding groove ends with a circular groove, and the circular groove corresponds one by one to the vent holes on the backplane and remains concentric. The most crucial thing is that the path from the center of the flow equalizing plate to the end of each flow guiding groove is equal.
[0042] The gas flow equalizing plate 3 is assembled with the plane areas on the upper surface of the backplane 12 to form a relatively closed air flow channel. The end of the channel corresponds to the vent holes 121 on the backplane 12. A number of vent holes are evenly distributed in the upper area directly above the silicon wafers. A gas jet nozzle 4 is installed in each vent hole.
[0043] Specifically, the flow equalizing plate is divided into four pieces, which are assembled with four planar regions of the back plate respectively, thus forming four relatively enclosed air flow channels. The end of the channel corresponds to the ventilation holes on the back plate. A number of ventilation holes are evenly distributed in the area directly above the silicon wafer, and a gas jet nozzle is installed in each ventilation hole. There is a blind hole at the axial center of the jet nozzle. Four small holes are evenly distributed on the cylindrical surface at an angle of about 45° to the axis. The four small holes are drilled through with the central blind hole. In this way, the sprayed gas can be sprayed obliquely on the silicon wafer.
[0044] The gas introduction assembly 2 includes a gas distribution shaft seal seat 21, a connecting air pipe 22, an air inlet block 23 and a ferrule joint 24. The bottom of the gas distribution shaft seal seat 21 is installed on the back plate 12, and the upper end of the gas distribution shaft seal seat 21 is hermetically connected to the vacuum chamber wall. The air inlet block 23 is connected to the center of the gas flow equalizing plate 3. One end of the connecting air pipe 22 is connected to the gas distribution shaft seal seat 21 through the ferrule joint 24, and the other end of the connecting air pipe 22 is connected to the air inlet block 23 through the ferrule joint 24.
[0045] The gas distribution shaft seal seat 21 is provided with a blind hole Ⅰ211 in the axial direction. Two threaded holes perpendicular to the blind hole Ⅰ211 are provided at the end of the blind hole Ⅰ211. The threaded holes communicate with the blind hole Ⅰ211. One end of the connecting air pipe 22 is connected to the gas distribution shaft seal seat 21 through the ferrule joint 24 and is matched with the threaded hole.
[0046] The air inlet block 23 is of a polygonal structure. A blind hole Ⅱ231 is provided at the center in the thickness direction of the air inlet block 23. A threaded hole communicating with the blind hole Ⅱ231 is provided on the side of the blind hole Ⅱ231. One end of the ferrule joint 24 is connected to the air inlet block 23 through matching with the threaded hole and communicates with the blind hole Ⅱ231. The blind hole Ⅱ231 communicates with the central hole of the gas flow equalizing plate 3. The other end of the ferrule joint 24 is connected to the connecting air pipe 22; a U-shaped bend is provided in the middle area of the connecting air pipe 22.
[0047] Specifically, the gas introduction assembly is composed of parts such as a gas distribution shaft seal seat, a connecting air pipe, an air inlet block and a ferrule joint. The function of the gas distribution shaft seal seat is to introduce the required gas from the atmosphere end into the vacuum chamber. One way of gas enters two gas distribution shaft seal seats simultaneously by splitting one into two from one port at the atmosphere end and then is distributed from four ports. Its structure is that there is a blind hole with a certain depth at the axial center, and two threaded holes perpendicular to the central hole are distributed at the end of the blind hole and are drilled through with the central hole.
[0048] The outer shape of the air inlet block is a polygonal structure. There is a blind hole at the center in the thickness direction, and a threaded hole on one side is drilled through with the central hole. There are screw holes around the blind hole to connect and fix the air inlet block and the flow equalizing plate.
[0049] The connecting gas pipe selects a 1 / 4-inch stainless steel jacketed pipe, and several U-shaped bends are folded in the middle area of the pipe. The purpose of doing this is that when there is thermal expansion, the pipe can deform more freely at the U-shaped bends, ensuring the reliability of the connection with the jacketed pipe joint.
[0050] Installation of the gas introduction component: The two gas distribution shaft seal seats are respectively installed on the center lines of the adjacent sides of the two heater components. The upper end of its axial direction is hermetically connected to the vacuum chamber wall, and the two threaded holes at the lower end respectively correspond to the threaded holes on the sides of the four intake blocks; the threaded holes of the four groups of corresponding intake blocks and the threaded holes of the gas distribution shaft seal seats are connected by using jacketed pipe joints and connecting gas pipes.
[0051] The gas heat homogenization device of the present utility model takes the heater component as the main body, and the flow equalizing plate, the gas introduction component and the jet nozzle are sequentially assembled on the heater component in sequence to form a two-in-one integral component; when the whole device is installed, first install the support columns on the inner surface of the cavity upper cover, then align the connection slot holes of the whole component with the support columns, and finally connect and fix them with equal height screws.
[0052] When the outer dimension of the heating plate is relatively large, for the convenience of processing and manufacturing, a heating plate component can be divided into four pieces to make the device become a four-in-one gas heat homogenization device; on the contrary, when the size of the heating plate is relatively small, two heating plates in this scheme can be combined into one whole piece, and the gas distribution and sealing shaft seats are also combined into one.
[0053] The present utility model integrates the heater and the gas flow equalizing structure into a module, enabling it to have both heating and gas flow equalizing functions at the same time; normal temperature gas is introduced into the vacuum chamber, and the gas molecules are heated during the process of diffusion through the diversion groove. When the gas reaches the jet nozzle, it already has a certain temperature; moreover, after the gas is introduced from the outside of the chamber, it first diffuses horizontally in the diversion groove and then comes out from the jet opening to reach the surface of the silicon wafer, which is beneficial to the uniformity of the gas concentration in a large area, thereby improving the uniformity of the temperature of the silicon wafer.
[0054] Those of ordinary skill in the art should understand that the discussion of any of the above embodiments is only exemplary, and is not intended to imply that the scope of the present utility model is limited to these examples; under the idea of the present utility model, the technical features between the above embodiments or different embodiments can also be combined, and the steps can be implemented in any order, and there are many other variations in different aspects of the present utility model as described above, and they are not provided in detail for the sake of brevity. Therefore, any omission, modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.
Claims
1. A gas heating device for PECVD equipment, comprising a heating component (1) and a gas introducing component (2), characterized in that: It also includes a gas flow plate (3) and an air nozzle (4), wherein the heating component (1) is an armored heater component, the gas flow plate (3) is mounted on the armored heater component and is interconnected, the gas introduction component (2) is mounted on the heating plate of the heating component (1), the gas introduction component (2) is connected to the air nozzle (4) through the gas flow plate (3) and the heating component (1), and the air nozzle (4) is mounted at the lower part of the heating plate of the heating component (1).
2. A gas uniform heating device for PECVD equipment according to claim 1, characterized in that: The heating assembly (1) comprises a heating plate, an armored heating wire and a thermocouple, the heating plate comprising a cover plate (11) and a back plate (12), the cover plate (11) and the back plate (12) are buckled together, and the armored heating wire and the thermocouple are arranged between the cover plate (11) and the back plate (12).
3. A gas uniform heating device for PECVD equipment according to claim 2, characterized in that: The back plate (12) is provided with a support column (14) for connecting to the cavity, and the cover plate (11) and the back plate (12) are both provided with a long slot hole (15) for installing the support column (14). The support column (14) is fastened to the heating plate by bolts of equal height passing through the long slot holes (15) on the cover plate (11) and the back plate (12) in sequence.
4. A gas uniform heating device for PECVD equipment as claimed in claim 3, characterized in that: The upper surface of the back plate (12) is processed with four planes with a depth of 2 mm according to the arrangement range of the silicon wafers. The four plane areas are arranged in a field shape. A number of ventilation holes (121) for ventilation are evenly arranged in each plane area. The cover plate (11) is provided with a number of conical countersunk holes (111). The distribution of the countersunk holes (111) corresponds to the distribution of the ventilation holes (121) and are interconnected.
5. A gas uniform heating device for PECVD equipment according to claim 4, characterized in that: A guide groove (31) is provided on the lower surface of the gas flow equalizer plate (3), a center hole (32) is provided at the center of the gas flow equalizer plate (3), the center hole (32) and the guide groove (31) are connected, the guide grooves (31) are symmetrically distributed on both sides along the x-axis or y-axis direction with the center hole (32) as the starting point, and fission is performed according to the exponential growth principle. Each time fission occurs, the number of guide grooves increases by 2 times, and the number of guide grooves (31) that finally fissions is consistent with the number of vent holes (121) in a single plane area on the back plate (12).
6. A gas uniform heating device for PECVD equipment according to claim 5, characterized in that: The end of the guide groove (31) ends with a circular groove, and the circular groove at the end of the guide groove (31) corresponds to the vent hole on the back plate one by one and remains concentric, and the path from the center of the gas flow equalizer (3) as the starting point to the end of each guide groove is equal.
7. A gas uniform heating device for PECVD equipment according to claim 6, characterized in that: The gas flow plate (3) is assembled with the planar area on the upper surface of the back plate (12) to form a relatively closed air flow channel, the end of the channel corresponds to the vent hole (121) on the back plate (12), and a plurality of vent holes are evenly distributed in the area directly above the silicon wafer, and each vent hole is equipped with a gas jet nozzle (4).
8. A gas uniform heating device for PECVD equipment according to any one of claims 2 to 7, characterized in that: The gas introduction component (2) comprises a gas distribution shaft sealing seat (21), a connecting gas pipe (22), an air intake block (23) and a ferrule joint (24); the bottom of the gas distribution shaft sealing seat (21) is mounted on the back plate (12); the upper end of the gas distribution shaft sealing seat (21) is sealed and connected to the vacuum chamber wall; the air intake block (23) is connected to the center of the gas flow equalizer (3); one end of the connecting gas pipe (22) is connected to the gas distribution shaft sealing seat (21) via a ferrule joint (24); and the other end of the connecting gas pipe (22) is connected to the air intake block (23) via a ferrule joint (24).
9. A gas uniform heating device for PECVD equipment according to claim 8, characterized in that: The air distribution shaft sealing seat (21) is provided with a blind hole I (211) along the axial direction, and the end of the blind hole I (211) is provided with two threaded holes perpendicular to the blind hole I (211), the threaded holes are communicated with the blind hole I (211), and one end of the connecting air pipe (22) is matched with the threaded holes through a sleeve pipe joint (24) and is then connected to the air distribution shaft sealing seat (21).
10. A gas uniform heating device for PECVD equipment according to claim 9, characterized in that: The air intake block (23) is a polygonal structure, a blind hole II (231) is provided at the center of the air intake block (23) in the thickness direction, a threaded hole connected to the blind hole II (231) is provided on the side of the blind hole II (231), one end of the ferrule joint (24) is connected to the air intake block (23) by cooperating with the threaded hole and is connected to the blind hole II (231), the blind hole II (231) is connected to the center hole of the gas flow equalizer (3), and the other end of the ferrule joint (24) is connected to the connecting air pipe (22); a U-shaped bend is provided in the middle area of the connecting air pipe (22).