Solar cell, photovoltaic module and photovoltaic system
During the preparation of heterojunction solar cells, nano-scale silver paste is used to fill the pyramid gaps and form electrodes, the problem of gaps in the contact between the low-temperature silver paste and the pyramid is solved, and the efficiency and reliability of the battery are improved.
Patent Information
- Application Number
- CN202421579256.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-04
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2034-07-04
AI Technical Summary
During the preparation process, there are gaps in the low-temperature silver paste and the pyramid, resulting in large contact resistance, which affects the battery efficiency. Traditional polishing treatment will affect optical performance and battery reliability.
Before screen printing to form the electrode, nanoscale ultrafine silver paste is used to fully fill the gaps inside the pyramid, and after filling, low-temperature silver paste with larger particle size is printed to form the electrode to ensure good contact between the electrode and the composite layer.
By reducing the gaps in contact between the low-temperature silver paste and the pyramid, the battery filling factor is improved and the contact resistance is reduced, thereby improving the efficiency of the solar cell.
Smart Images
Figure CN223007836U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of solar cells, and in particular to a solar cell, a photovoltaic module, and a photovoltaic system. Background Art
[0002] The HJT solar cell (heterojunction solar cell) is a new type of solar cell based on a thin silicon substrate. It has high photoelectric conversion efficiency, broad application scenarios, and good market prospects.
[0003] Traditional crystalline silicon solar cells use high-temperature pastes. The glass frit in them can corrode the underlying dielectric film during sintering. The silver particles are calcined and melted to combine with silicon to form a silver-silicon alloy, which has very good contact. However, in the entire preparation process of heterojunction solar cells, the processing temperature does not exceed 250°C. That is, compared with traditional crystalline silicon cells, heterojunction solar cells cannot be sintered at high temperatures. Therefore, low-temperature silver paste needs to be used during the preparation process. However, the low-temperature silver paste does not contain glass components, and the contact with the TCO only relies on physical contact. In addition, the average particle size of the low-temperature silver paste is larger than that of the high-temperature paste, resulting in large voids during the contact with the pyramid. This increases the difficulty for carriers to escape from the semiconductor and be collected by the metal electrode, manifested as a relatively large contact resistance, which will greatly affect the battery efficiency.
[0004] Regarding the voids existing between the low-temperature paste and the pyramid, the current common practice is to perform a polishing treatment under the grid lines. However, after the polishing treatment, on the one hand, the optical performance of the battery is affected, resulting in a decrease in current. On the other hand, the bonding force between the polished surface and the metal grid line is small, and the grid line is prone to falling off during the subsequent component welding and lamination processes, thus affecting the reliability of the battery chip.
[0005] Based on the above existing problems, it is very necessary to develop a new type of solar cell in this application. Utility Model Content
[0006] Embodiments of this application provide a solar cell, a photovoltaic module, and a photovoltaic system to solve or alleviate at least one of the above technical problems.
[0007] In a first aspect, embodiments of this application provide a solar cell, which includes: a composite layer and electrode layers disposed on both side surfaces of the composite layer;
[0008] Both side surfaces of the composite layer are in a matte structure;
[0009] At least the gaps where one side surface of the composite layer contacts the electrode layer are filled with nano silver.
[0010] Optionally, the electrode layer is a nano silver paste layer with an average particle size of 3 - 6 μm.
[0011] Optionally, the thickness of the nano-silver layer is 1-2 μm.
[0012] Optionally, the nano-silver layer is a nano-silver layer with an average particle size of 50-800 nm.
[0013] Optionally, the composite layer includes a base layer, and a passivation layer, a doping layer, and a TCO conductive film layer sequentially provided on both surface sides of the base layer, and both surface sides of the base layer are in a matte surface structure.
[0014] Optionally, the base layer is an N-type silicon base layer or a P-type silicon base layer.
[0015] Optionally, the thickness of the base layer is 110-150 μm.
[0016] Optionally, the passivation layer is an intrinsic amorphous silicon layer.
[0017] Optionally, the thickness of the passivation layer is 6-10 nm.
[0018] Optionally, the doping layer is a doped amorphous silicon layer or a doped microcrystalline silicon layer.
[0019] Optionally, the thickness of the doping layer is 10-20 nm.
[0020] Optionally, the TCO conductive film layer is an ITO transparent conductive layer.
[0021] Optionally, the thickness of the TCO conductive film layer is 60-100 nm.
[0022] In a second aspect, an embodiment of the present application provides a photovoltaic module, and the photovoltaic module includes the solar cell described in the first aspect.
[0023] In a third aspect, an embodiment of the present application provides a photovoltaic system, and the photovoltaic system includes the photovoltaic module described in the second aspect.
[0024] The embodiments of the present application adopting the above technical solutions may include the following advantages: When forming a solar cell, in order to reduce the voids existing between the low-temperature paste and the pyramid contact, before screen printing to form an electrode, first use a nano-scale ultra-fine silver paste to fully fill the inside of the pyramid, and after filling, then print a low-temperature silver paste with a larger particle size to form an electrode, so that the electrode has a very good contact with the composite layer, which can effectively improve the fill factor of the battery, thereby improving the battery efficiency. Description of the Drawings
[0025] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the several views denote the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.
[0026] Figure 1 : Schematic diagram of a solar cell structure;
[0027] Figure 2 : Schematic diagram of a composite layer structure;
[0028] Figure 3 is a schematic diagram of an HJT solar cell structure;
[0029] Description of reference numerals:
[0030] 1 is a composite layer; 2 is an electrode layer; 3 is nano silver;
[0031] 10 is a base layer; 20 is a passivation layer; 30 is a doping layer; 40 is a TCO conductive film layer. Specific embodiments
[0032] The embodiments of the present application will be described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. Among them, the same or similar reference numerals throughout denote the same or similar elements or elements having the same or similar functions. The embodiments described below are exemplary and are only used to explain the present application and should not be construed as limiting the present application. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other.
[0033] It should be understood that when an element or layer is referred to as "on", "adjacent to", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent to, connected, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as "directly on", "directly adjacent to", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although terms such as first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, without departing from the teachings of the present disclosure, the first element, component, region, layer, or part discussed below may be referred to as the second element, component, region, layer, or part. And when discussing the second element, component, region, layer, or part, it does not indicate that there must be a first element, component, region, layer, or part in the present disclosure.
[0034] In this application, unless otherwise clearly specified and defined, terms such as "installed", "connected", "connected to", "fixed", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0035] It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects and do not necessarily need to be used to describe a specific order or sequence. It should be understood that these terms can be interchanged under appropriate circumstances so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.
[0036] In this application, when it comes to numerical intervals (i.e., numerical ranges), unless otherwise specified, the distribution of the selectable numerical values within the numerical interval is considered continuous, and includes the two numerical endpoints of the numerical interval (i.e., the minimum value and the maximum value), as well as each numerical value between these two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to the integers within the numerical interval, it includes the two endpoint integers of the numerical range, as well as each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be combined. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all sub-ranges subsumed therein. The "numerical values" in the numerical interval can be any quantitative values, such as numbers, percentages, ratios, etc. The "numerical interval" is allowed to broadly include quantitative intervals such as percentage intervals, ratio intervals, and ratio value intervals.
[0037] An embodiment of this application provides a solar cell, as Figure 1 shown, including: a composite layer 1 and an electrode layer 2.
[0038] The composite layer 1 has two opposite sides.
[0039] One electrode layer 2 is disposed on one side of the composite layer 1, and another electrode layer (not labeled) is disposed on the other side of the composite layer 1.
[0040] Both surfaces of the composite layer 1 are suede structures.
[0041] At least the gaps where one side surface of the composite layer 1 contacts the electrode layer 2 are filled with nano silver.
[0042] When forming the solar cell, in order to reduce the voids existing between the low-temperature paste and the pyramid contact, before performing screen printing to form the electrode, first use nano-scale ultra-fine silver paste to fully fill the inside of the pyramid. After filling, then print the low-temperature silver paste with a larger particle size to form the electrode, so that the electrode (electrode layer) has very good contact with the composite layer, which can effectively improve the fill factor of the battery, thereby improving the battery (photovoltaic conversion) efficiency.
[0043] In some embodiments, the surface of the composite layer is a suede structure, and the suede morphology is a positive pyramid structure, an inverted pyramid structure, or other light-trapping geometric graphic structures; based on the uneven structure of the suede morphology, when performing screen printing to form the electrode, it will cause some parts of the surface of the composite layer not to contact the electrode layer. By filling the non-contact gaps with nano silver, the contact between the composite layer and the conductive metal can be increased, effectively improving the fill factor of the battery, thereby improving the battery efficiency.
[0044] In some embodiments, nano silver is filled in the gap where at least one side surface of the composite layer is in contact with the electrode layer. Preferably, nano silver is filled in the gaps where both side surfaces of the composite layer are in contact with the electrode layer, so as to more effectively reduce the contact resistance and improve the battery efficiency.
[0045] In some embodiments, the electrode layer is a nano silver paste layer with an average particle size of 3 - 6 μm (exemplary 3 μm, 4 μm, 5 μm, 6 μm, etc.). It should be noted that the material of the electrode layer includes but is not limited to nano silver paste, and those skilled in the art can select according to actual needs. The average particle size of the nano silver paste used in the electrode layer should be higher than that of the nano silver used in the nano silver layer, because a higher average particle size of the nano silver paste is conducive to improving the conductivity, while the main function of the nano silver is to fill the gap between the textured surface structure and the electrode layer.
[0046] In some embodiments, the thickness of the nano silver layer is 1 - 2 μm (exemplary, the thickness of the nano silver layer is 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, etc.), and the nano silver layer is a nano silver layer with an average particle size of 50 - 800 nm (exemplary, the average particle size is 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, etc.).
[0047] In some embodiments, as Figure 2 shown, the composite layer includes a base layer 10, and a passivation layer 20, a doping layer 30, and a TCO conductive film layer 40 sequentially arranged on both side surfaces of the base layer; both side surfaces of the base layer 10 are textured surface structures. When the structure of the composite layer is this structure, the solar cell is an HJT (heterojunction) solar cell. During the entire preparation process of the heterojunction, sintering cannot be carried out at high temperature, and low-temperature silver paste needs to be used. Since the particle size of the low-temperature silver paste is relatively large, there will be large voids in the contact in the pyramid. By filling nano silver in the voids, the fill factor of the battery can be effectively improved, thereby improving the battery efficiency.
[0048] When the solar cell is an HJT solar cell:
[0049] The base layer is an N-type silicon base layer or a P-type silicon base layer, and the thickness of the base layer is 110 - 150 μm (exemplary, the thickness of the base layer is 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, etc.).
[0050] The material of the passivation layer is an intrinsic amorphous silicon layer, and the thickness of the passivation layer is 6 - 10 nm (exemplary, the thickness of the passivation layer is 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc.).
[0051] The doped layer is a doped amorphous silicon layer or a doped microcrystalline silicon layer, and the thickness of the doped layer is 10 - 20 nm (exemplarily, the thickness of the doped layer is 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, etc.).
[0052] The TCO conductive film layer is an ITO transparent conductive layer, and the thickness of the TCO conductive film layer is 60 - 100 nm (exemplarily, the thickness of the TCO conductive film layer is 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.).
[0053] In some embodiments, the method for preparing the HJT solar cell includes:
[0054] S1. Double - side texturing and cleaning the silicon wafer with N - type or P - type doping to make its surface present a textured structure;
[0055] S2. Depositing a passivation layer on both side surfaces of the silicon wafer with the textured structure;
[0056] S3. Depositing a doped layer on the surface of the passivation layer;
[0057] S4. Depositing a TCO conductive film layer on the surface of the doped layer;
[0058] S5. Using nano - silver paste with small particle size to fully fill the pyramids;
[0059] S6. Screen - printing electrodes.
[0060] In some embodiments, the deposition methods include vacuum evaporation, magnetron sputtering, chemical vapor deposition, atomic layer deposition, etc.
[0061] In some embodiments, the electrodes are formed by laser transfer printing, thermal evaporation, vacuum evaporation, magnetron sputtering, atomic layer deposition, 3D printing, screen printing, or inkjet printing.
[0062] In some embodiments, the method for preparing the HJT solar cell includes the following steps:
[0063] (1) Wafer cutting: Using a high - precision galvanometer and a linear motor for compensation adjustment to cut the purchased silicon wafer in a refrigerant - free manner (most of which use water in the market) to better protect the N - type silicon wafer film layer and complete the wafer cutting;
[0064] (2) Chain cleaning: Placing the cut silicon wafer into a potassium hydroxide cleaning solution for cleaning, and then performing pickling to complete the cleaning of the silicon wafer surface;
[0065] (3) Chain gettering: Using phosphoric acid to form phosphosilicate glass on the silicon wafer surface at a certain temperature to achieve the effect of sucking out metal impurities in the silicon wafer;
[0066] (4) Cleaning and texturing: Using the principle of anisotropic etching of silicon by alkali, pyramid shapes are formed on the surface of the silicon wafer to achieve the purpose of light trapping; at the same time, the improved RCA cleaning process is used to clean the surface of the silicon wafer to prepare for the next coating step.
[0067] (5) PEVCD (Plasma Enhanced Chemical Vapor Deposition) coating: Using the excellent short-circuit effect of amorphous silicon, intrinsic amorphous silicon thin film and doped amorphous silicon thin film are deposited on the surface of the silicon wafer to form a PN junction. The process mainly uses an RF power supply (radio frequency power supply) to excite process gases such as silane (SiH) and hydrogen (H) into a plasma state and react with each other, and finally deposit in the form of a thin film on the surface of the silicon wafer.
[0068] (6) PVD (Physical Vapor Deposition) coating: Depositing a TCO transparent conductive oxide thin film on the surface of the battery to achieve antireflection and conductivity; the process mainly uses the principle of magnetron sputtering to deposit the TCO material on the surface of the battery in the form of a thin film to achieve the functions of conductivity, antireflection and protecting the amorphous silicon thin film.
[0069] (7) Screen printing small particle nano silver: Using a fixed screen pattern to print the nano silver paste of small particles into the pyramid for partial filling.
[0070] (8) Screen printing electrodes: Using a fixed screen pattern to print the silver paste on the front and back of the battery, and after curing, a circuit is formed to lead out the current generated by the battery.
[0071] The following specific embodiments further illustrate the present application in detail, but should not be construed as a limitation to the present application. Without departing from the spirit and essence of the present application, any modification or replacement made to the methods, steps or conditions of the present application belongs to the scope of the present application.
[0072]
Embodiment 1
[0073] This embodiment provides an HJT solar cell, as Figure 3 shown, on both sides of the base layer 10, a passivation layer 20, a doping layer 30, a TCO conductive film layer 40 and an electrode layer 2 are sequentially provided. A nano silver layer 3 is filled in the gap where the TCO conductive film layer 40 contacts the electrode layer 2; the base layer is an N-type silicon wafer layer with a thickness of 120 μm; the passivation layer is an intrinsic amorphous silicon layer with a thickness of 8 nm; the doping layer is a doped amorphous silicon layer with a thickness of 15 nm; the TCO conductive film layer is an ITO transparent conductive layer with a thickness of 80 nm; the electrode layer is a nano silver paste layer with an average particle size of 5 μm; the nano silver layer is a nano silver layer with an average particle size of 500 nm and a thickness of 1 - 2 μm.
[0074] The preparation method of HJT is prepared by the above - mentioned preparation method. Compared with the conventional HJT battery, there is one more step: using a fixed screen pattern to print nano - silver paste with an average particle size of 500 - 800 into the pyramid for partial filling.
[0075]
Example 2
[0076] This example provides an HJT solar cell. On both sides of the base layer surface, a passivation layer, a doping layer, a TCO conductive film layer, and an electrode layer are sequentially arranged. A nano - silver layer is filled in the gap where the TCO conductive film layer and the electrode layer are in contact; among them, the base layer is an N - type silicon wafer layer with a thickness of 110μm; the passivation layer is an intrinsic amorphous silicon layer with a thickness of 6nm; the doping layer is a doped amorphous silicon layer with a thickness of 10nm; the TCO conductive film layer is an ITO transparent conductive layer with a thickness of 60nm; the electrode layer is a nano - silver paste layer with an average particle size of 3μm; the nano - silver layer is a nano - silver layer with an average particle size of 50nm and a thickness of 1 - 2μm.
[0077]
Example 3
[0078] This example provides an HJT solar cell. On both sides of the base layer surface, a passivation layer, a doping layer, a TCO conductive film layer, and an electrode layer are sequentially arranged. A nano - silver layer is filled in the gap where the TCO conductive film layer and the electrode layer are in contact; among them, the base layer is an N - type silicon wafer layer with a thickness of 150μm; the passivation layer is an intrinsic amorphous silicon layer with a thickness of 10nm; the doping layer is a doped amorphous silicon layer with a thickness of 20nm; the TCO conductive film layer is an ITO transparent conductive layer with a thickness of 100nm; the electrode layer is a nano - silver paste layer with an average particle size of 6μm; the nano - silver layer is a nano - silver layer with an average particle size of 800nm and a thickness of 1 - 2μm.
[0079]
Comparative Example 1
[0080] The difference from Example 1 is that it does not include filling nano - silver in the gap between the TCO conductive film layer and the electrode.
[0081] The HJT solar cells obtained in Example 1 and Comparative Example 1 are respectively tested using a simulated light source system, and the relevant performance test results are shown in Table 1.
[0082] Table 1 Performance test of HJT solar cells obtained in Example and Comparative Example 1
[0083] Battery EFF / % FF / % Isc / A Rs / mohm Contact Resistance / ohm Example 1 25.76 85.62 8.871 0.84 0.78 Example 2 25.72 85.68 8.853 0.81 0.74 Example 3 25.73 85.52 8.874 0.95 0.87 Comparative Example 1 25.70 85.47 8.859 1.06 0.96
[0084] As can be seen from Table 1, before forming the electrodes with screen-printed grid lines, first use nano-scale silver paste with a small particle size to fully fill the gaps in the pyramids, which can improve the contact surface between the electrodes and the TCO conductive film layer, reduce the contact resistance by 0.18 ohm, thereby reducing the series resistance Rs by 0.22 mohm, increasing the fill factor FF by 0.17%, increasing the short-circuit current Isc by 12 mA, and increasing the EFF (conversion efficiency) by 0.06%.
[0085] An embodiment of the present application provides a photovoltaic module (not shown), including the above-described solar cell. As an example, the photovoltaic module includes at least one battery string, and the battery string includes at least two HJT solar cells of any one of the embodiments. Adjacent HJT solar cells can be connected together by string soldering.
[0086] An embodiment of the present application can provide a photovoltaic system, including the photovoltaic module in the above embodiments. The photovoltaic system also has the advantages possessed by the above photovoltaic module, which will not be elaborated here. The application fields of the above photovoltaic system are extensive, not limited to photovoltaic power stations, such as ground power stations, rooftop power stations, and water surface power stations, but also include various devices and apparatuses that utilize solar energy for power generation, such as user solar power supplies, solar street lights, solar cars, and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be applied in all fields that require solar power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system can include a photovoltaic array, a busbar box, and an inverter. The photovoltaic array can be an array combination of multiple photovoltaic modules. For example, multiple photovoltaic modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the busbar box, and the busbar box can collect the current generated by the photovoltaic array. After the collected current flows through the inverter and is converted into alternating current required by the mains power grid, it is connected to the mains network to achieve solar power supply.
[0087] It should be noted that the terms "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application. The orientation terms "inner" and "outer" refer to the inside and outside relative to the contour of each component itself. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "on top of other devices or structures" will then be positioned "below other devices or structures" or "beneath other devices or structures". Thus, the exemplary term "above" can include both the orientations of "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the corresponding explanations are made for the relative spatial descriptions used here.
[0088] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present application are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such terms can be interchanged under appropriate circumstances so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.
[0089] It also needs to be noted that the "one embodiment", "another embodiment", "embodiment", etc. mentioned in the present application refer to the specific features, structures or characteristics described in connection with that embodiment being included in at least one embodiment described in the general description of the present application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in connection with any one embodiment, it is intended that the implementation of such feature, structure or characteristic in combination with other embodiments also falls within the scope of the present application.
[0090] In the above embodiments, the descriptions of each embodiment have their own emphases. For the parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0091] It should also be noted that the above are only the preferred embodiments of the present application, and do not limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be similarly included in the patent protection scope of the present application.
Claims
1. A solar cell, characterized in that: The solar cell comprises: a composite layer and electrode layers arranged on both sides of the composite layer; Both sides of the composite layer have suede structures; At least a gap between the surface of one side of the composite layer and the electrode layer is filled with a nanosilver layer; The nanosilver layer is filled between the composite layer and the electrode layer by screen printing, and the thickness of the nanosilver layer is 1-2 μm; the nanosilver layer has an average particle size of 50-800 nm.
2. The solar cell according to claim 1, characterized in that The electrode layer is a nano silver paste layer with an average particle size of 3-6 μm.
3. The solar cell according to claim 1, characterized in that The composite layer comprises a base layer, and a passivation layer, a doping layer and a TCO conductive film layer which are sequentially arranged on both sides of the base layer; Both sides of the base layer have suede structures.
4. The solar cell according to claim 3, characterized in that: The base layer is an N-type silicon base layer or a P-type silicon base layer; The thickness of the base layer is 110-150 μm.
5. The solar cell according to claim 3, characterized in that: The passivation layer is an intrinsic amorphous silicon layer; The thickness of the passivation layer is 6-10 nm.
6. The solar cell according to claim 3, characterized in that: The doped layer is a doped amorphous silicon layer or a doped microcrystalline silicon layer; The thickness of the doping layer is 10-20 nm.
7. The solar cell according to claim 3, characterized in that: The TCO conductive film layer is an ITO transparent conductive layer; The thickness of the TCO conductive film layer is 60-100 nm.
8. A photovoltaic module, characterized in that: The photovoltaic module comprises the solar cell according to any one of claims 1 to 7.
9. A photovoltaic system, characterized in that: The photovoltaic system comprises the photovoltaic module according to claim 8.