Ultra-wideband antenna with notch feature and communication equipment

By setting specific structures on the radiation layer and depression formation of ultra-wideband antennas, such as T-shaped notch gaps and L-shaped gaps, the problem that existing antennas cannot effectively suppress in-band interference is solved, and efficient wireless communication performance is achieved.

CN223023598UActive Publication Date: 2025-06-24SHENZHEN SUNWAY COMM
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Patent Information

Application Number
CN202421861752.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-01
Publication Date
2025-06-24
Estimated Expiration
2034-08-01

AI Technical Summary

Technical Problem

The existing miniaturized ultra-wideband plane antenna lacks in-band notch characteristics and cannot effectively suppress in-band interference, affecting its application in modern miniaturized wireless communication systems.

Method used

An ultra-wideband antenna with notch characteristics is designed. By setting a rectangular radiation patch, a microstrip feeder and a T-shaped notch gap on the radiation layer, and an L-shaped gap is opened on the depression formation to achieve a notch with a central frequency that can be controlled separately, effectively suppressing in-band interference.

Benefits of technology

It realizes the characteristics of miniaturization of antennas, ultra-wideband, high radiation efficiency and high gain, and has a good effect of suppressing in-band interference, improving wireless communication performance.

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Patent Text Reader

Abstract

The utility model provides an ultra-wideband antenna with a notch characteristic and communication equipment. The antenna comprises a radiation layer, a dielectric layer and a concave ground layer which are stacked in sequence, the radiation layer comprises a rectangular radiation patch, a microstrip feeder line and a T-shaped notch slot; one end of the microstrip feeder line is connected with one side of the rectangular radiation patch; the T-shaped notch slot is formed in the rectangular radiation patch; an L-shaped gap is formed in the sunken ground layer; and a transverse branch of the L-shaped slot corresponds to the rectangular radiation patch. The antenna provided by the utility model not only has the characteristics of miniaturization, high radiation efficiency and high gain, but also can effectively suppress in-band interference.
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Description

Technical Field

[0001] The utility model relates to the technical field of antennas, in particular to an ultra-wideband antenna with notch characteristics and a communication device. Background Art

[0002] Due to the advantages of high transmission rate, low cost, small size, low power consumption, etc. of the miniaturized ultra-wideband planar antenna, it has attracted the attention of many experts, scholars and engineers. However, for the existing miniaturized ultra-wideband planar antenna, it often does not have in-band notch and cannot effectively suppress in-band interference, which greatly affects its use in modern miniaturized wireless communication systems. Summary of the Utility Model

[0003] The technical problem to be solved by the utility model is to provide an ultra-wideband antenna and a communication device with notch characteristics, which not only have the characteristics of miniaturization, high radiation efficiency and high gain, but also can effectively suppress in-band interference.

[0004] In order to solve the above technical problem, the technical scheme adopted by the utility model is as follows:

[0005] An ultra-wideband antenna with notch characteristics, comprising a radiation layer, a dielectric layer and a sunken ground layer stacked in sequence; the radiation layer includes a rectangular radiation patch, a microstrip feeder and a T-shaped notch slot; one end of the microstrip feeder is connected to one side of the rectangular radiation patch; the T-shaped notch slot is formed on the rectangular radiation patch; an L-shaped slot is formed on the sunken ground layer; the horizontal branch of the L-shaped slot corresponds to the rectangular radiation patch.

[0006] Optionally, the T-shaped notch slot includes a horizontal slot and a vertical slot; the horizontal slot is perpendicular to the vertical slot.

[0007] Optionally, the vertical slot is on the same straight line as the microstrip feeder; and the vertical slot is away from the microstrip feeder.

[0008] Optionally, one end of the vertical slot is connected to the horizontal slot, and the other end is connected to the edge position of the rectangular radiation patch.

[0009] Optionally, the length of the horizontal slot of the T-shaped notch slot ranges from 2.2 to 4.2 mm, and the width ranges from 0.1 to 0.3 mm; the length of the vertical slot of the T-shaped notch slot ranges from 2.5 to 4.5 mm, and the width ranges from 0.1 to 0.3 mm.

[0010] Optionally, the distance between the vertical slot of the T-shaped notch slot and the edge position of the rectangular radiation patch corresponding to the L-shaped slot ranges from 2.7 to 4.7 mm.

[0011] Optionally, the length of the rectangular radiation patch ranges from 6.0 to 8.0 mm, and the width ranges from 7.0 to 9.0 mm; the length of the microstrip feeder ranges from 7.0 to 9.0 mm, and the width ranges from 1.5 to 1.6 mm.

[0012] Optionally, the length of the horizontal branch of the L-shaped slot ranges from 6.4 to 7.4 mm, and the width ranges from 11.0 to 13.0 mm; the width of the vertical branch of the L-shaped slot ranges from 3.0 to 5.0 mm, and the length ranges from 7.0 to 9.0 mm.

[0013] Optionally, the vertical branch of the L-shaped slot is located at the edge of the recessed ground plane; the vertical branch is parallel to the microstrip feeder.

[0014] The second technical solution adopted by the present utility model is as follows:

[0015] A communication device includes the above-mentioned ultra-wideband antenna with notch characteristics.

[0016] The beneficial effects of the present utility model are as follows: The ultra-wideband antenna with notch characteristics of the present utility model has a radiation layer including a rectangular radiation patch, a microstrip feeder, and a T-shaped notch slot; the T-shaped notch slot is provided on the rectangular radiation patch, thereby introducing a notch with a separately controllable center frequency, which effectively suppresses in-band interference; at the same time, an L-shaped slot is opened in the recessed ground plane, and the horizontal branch corresponds to the rectangular radiation patch, which can not only increase the optimal matching of the bandwidth, but also convert the directional antenna into an omnidirectional antenna. Therefore, the antenna of the present utility model has the advantages of miniaturization, ultra-wideband, high radiation efficiency, and high gain, and also has a good effect of suppressing in-band interference. Description of the Drawings

[0017] Figure 1 It is a schematic diagram of the hierarchical structure of the ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0018] Figure 2 It is a front view of the ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0019] Figure 3 It is a back view of the ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0020] Figure 4 It is a dimension parameter comparison diagram in the front view of the ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0021] Figure 5Dimension parameter comparison diagram in the back view of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention;

[0022] Figure 6 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter L S1 ;

[0023] Figure 7 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter L S2 ;

[0024] Figure 8 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter L S3 ;

[0025] Figure 9 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter W S1 ;

[0026] Figure 10 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter W S3 ;

[0027] Figure 11 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter W S4 ;

[0028] Figure 12 Passband variation curve diagram of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention with respect to parameter D3;

[0029] Figure 13 Simulation result diagram of the reflection coefficient of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention when using optimized parameters;

[0030] Figure 14 Simulation result diagram of the gain and radiation efficiency of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention when using optimized parameters;

[0031] Figure 15 Radiation pattern of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention at 3.6 GHz when using optimized parameters;

[0032] Figure 16 Radiation pattern of the ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention at 6.1 GHz when using optimized parameters;

[0033] Figure 17 The radiation pattern at 9.2 GHz when the optimized parameters are adopted for the ultra-wideband antenna with notch characteristics provided by the embodiments of the present invention.

[0034] Label description:

[0035] 1. Radiation layer; 2. Dielectric layer; 3. Defected ground plane;

[0036] 11. Rectangular radiation patch; 12. Microstrip feeder; 13. T-shaped notch slot;

[0037] 131. Transverse slot; 132. Vertical slot;

[0038] 31. L-shaped slot; 32. Vertical branch; 33. Horizontal branch. Detailed implementation manners

[0039] To describe in detail the technical content, achieved objectives and effects of the present utility model, the following is described in conjunction with the implementation manners and with reference to the accompanying drawings.

[0040] Please refer to Figures 1 to 3 , Embodiment 1 of the present utility model is as follows:

[0041] This embodiment provides a miniaturized ultra-wideband antenna with notch characteristics. As Figure 1 shown, it includes a radiation layer 1, a dielectric layer 2 and a defected ground plane 3 which are designed in a stacked structure. Among them, the radiation layer 1 is mounted on the upper surface of the dielectric layer 2, and the defected ground plane 3 is mounted on the lower surface of the dielectric layer 2. The radiation layer 1 and the defected ground plane 3 are made of metal materials.

[0042] As Figure 2 shown, the radiation layer 1 includes a rectangular radiation patch 11, a microstrip feeder 12 and a T-shaped notch slot 13. One end of the microstrip feeder 12 is connected to one side of the rectangular radiation patch 11, and the other end (i.e., the feeding end) is connected to the edge position of the dielectric layer 2. The T-shaped notch slot 13 is arranged on the rectangular radiation patch 11 and is used to introduce a notch with a separately controllable center frequency.

[0043] In some specific implementation manners, the T-shaped notch slot 13 includes a transverse slot 131 and a vertical slot 132. The transverse slot 131 is perpendicular to the vertical slot 132.

[0044] In still some other specific implementation manners, the length direction of the vertical slot 132 in the T-shaped notch slot 13 is consistent with the length direction of the microstrip feeder 12. That is to say, the vertical slot 132 and the microstrip feeder 12 are on the same straight line. And, the vertical slot 132 is away from the microstrip feeder 12. That is to say, the vertical slot 132 and the microstrip feeder 12 are respectively located on both sides of the transverse slot 131.

[0045] In some other specific embodiments, the transverse slot 131 of the T-shaped notch slot 13 is located at the center position of the rectangular radiation patch 11; one end of the vertical slot 132 of the T-shaped notch slot 13 is connected to the transverse slot 131, and the other end is connected to the edge position of the rectangular radiation patch 11.

[0046] In a preferred example, as Figure 2 shown, the transverse slot 131 of the T-shaped notch slot 13 is located at the center position of the rectangular radiation patch 11; one end of the vertical slot 132 of the T-shaped notch slot 13 is connected to the transverse slot 131, and the other end is connected to the edge position of the rectangular radiation patch 11. At the same time, the length direction of the vertical slot 132 in the T-shaped notch slot 13 is consistent with the length direction of the microstrip feeder 12.

[0047] In this embodiment, the T-shaped notch slot opened on the rectangular radiation patch can change the distribution of the surface current, and further change the magnitude of the input impedance at a specific frequency, forming a transmission zero point. In this way, it can effectively suppress the interference brought by the narrowband signal in the communication band, so that the antenna has good performance in suppressing in-band interference.

[0048] As Figure 3 shown, an L-shaped slot 31 is opened on the sunken ground layer 3 of this embodiment; the L-shaped slot 31 is composed of a vertical branch 32 and a horizontal branch 33 which are perpendicularly arranged. Among them, the horizontal branch 33 corresponds to the rectangular radiation patch 11. That is to say, the two are corresponding (there is a large part of overlap) in the hierarchical structure.

[0049] In some specific embodiments, the vertical branch 32 in the sunken ground layer 3 is parallel to the microstrip feeder 12 in the radiation layer 1. Preferably, the vertical branch 32 is located at the edge position of the sunken ground layer 3. Preferably, one end of the vertical branch 32 is connected to the edge position of the sunken ground layer 3.

[0050] In a preferred example, in combination with Figure 2 and Figure 3It can be known that the vertical branch 32 of the L-shaped slot 31 opened in the sunken formation 3 is located at the edge position of the sunken formation 3, and one end of it is connected to the edge position of the sunken formation 3, while the other end has a preset distance from the edge position of the sunken formation 3; the horizontal branch 33 in the L-shaped slot 31 corresponds to the rectangular radiation patch 11 in the radiation layer 1 in the hierarchical structure, and the distance from the side of the horizontal branch 33 close to the vertical branch 32 to the edge position of the sunken formation 3 is the same as the distance from the side of the rectangular radiation patch 21 connected to the microstrip feeder 12 to the edge position of the radiation layer 2, that is, from the front perspective of the hierarchical structure, one side of the horizontal branch 33 completely overlaps with one side of the rectangular radiation layer 2. In addition, the vertical branch 32 in the sunken formation 3 is closer to the T-shaped notch slot 13 in the radiation layer 2, that is, the vertical branch 32 is arranged on the side of the rectangular radiation 11 closer to the T-shaped notch slot 13.

[0051] In this embodiment, the layout design of the radiation layer and the sunken formation not only reduces the Q value of the antenna, but also changes the distribution of the magnetic field, and realizes the ultra-wideband characteristics by introducing the multi-mode concept; at the same time, it can also convert the directional antenna into an omnidirectional antenna; in addition, it also has the advantages of simple structure and few parameters to be optimized.

[0052] Embodiment 2 of the present invention is as follows:

[0053] Please refer to Figures 2 to 14 , this embodiment is further extended based on Embodiment 1, and specifically optimizes the parameters of the radiation layer and the defect layer of the antenna to obtain the desired antenna performance.

[0054] For the antenna structure described in Embodiment 1, its working center frequency is mainly determined by the parameters of the radiation patches (including rectangular radiation patches, microstrip feeders, and T-shaped notch slots) that make up the radiation layer; its radiation performance is mainly determined by the parameters of the L-shaped slot in the defect formation.

[0055] In this embodiment, combining Figure 2 and Figure 4 it can be known that the overall size of the circuit board formed by stacking the radiation layer 1, the dielectric layer 2, and the defect formation 3 is length L G * width W G ; among them, the preferred value range of the length L G is 18 - 23 mm; the preferred value range of the width W G is 20 - 24 mm. In a preferred example, the overall size of the circuit board is length L G * width W G = 20.5 mm * 22 mm.

[0056] As Figure 4 shown is the front of the circuit board layout. Combining Figure 2 it can be known that the length L of the rectangular radiation patch in the radiation layer 1 thereon RThe value range of is 6.0 - 8.0 mm, and the width W R The value range of is 7.0 - 9.0 mm; in a preferred example, the size of the rectangular radiation patch 21 is L R *W R = 7.0 * 8.0 mm. The distance D1 from one side of the L-shaped slot corresponding to the sunken formation in the rectangular radiation patch to the edge of the corresponding dielectric layer (i.e., the edge of the circuit board) preferably has a value range of 8 - 9 mm. In a preferred example, the distance D1 from one side of the rectangular radiation patch to the upper edge of the dielectric board is 7.0 mm.

[0057] The length L of the microstrip feeder in the radiation layer F The value range of is 7.0 - 9.0 mm, and the width W F The value range of is 1.5 - 1.6 mm. The distance D2 from the other side of the microstrip feeder away from the L-shaped slot of the sunken formation to the edge of the corresponding dielectric layer (i.e., the edge of the circuit board) preferably has a value range of 8 - 11 mm. In a preferred example, the size of the microstrip feeder is L F *W F = 8.0 * 1.53 mm; the distance D2 from one side of the microstrip feeder to the edge of the dielectric board is 9.2 mm. Preferably, the microstrip feeder is a 50-ohm feeder.

[0058] The length L of the horizontal slot of the T-shaped notch slot in the radiation layer S2 The preferred value range of is 2.2 - 4.2 mm, and the width W S2 The preferred value range of is 0.1 - 0.3 mm. In a preferred example, the size of the horizontal slot of the T-shaped notch slot is L S2 *W S2 = 4.2 * 0.1 mm. The length L of the vertical slot of the T-shaped notch slot S1 The preferred value range of is 2.5 - 4.5 mm, and the width W S1 The preferred value range of is 0.1 - 0.3 mm. In a preferred example, the size of the horizontal slot of the T-shaped notch slot is L S1 *W S1 = 4.5 * 0.2 mm. The distance D3 from the vertical slot of the T-shaped notch slot to the edge position corresponding to the L-shaped slot in the rectangular radiation patch has a value range of 2.7 - 4.7 mm. In a preferred example, the preferred value of the distance D3 from the vertical slot of the T-shaped notch slot to the edge position of the rectangular radiation patch is 3.7 mm.

[0059] As Figure 5 shown is the back of the circuit board layout. Combining Figure 3 it can be known that the length L of the vertical branch of the L-shaped slot opened in the sunken formation on it FThe preferred value range of is 7.0 - 9.0 mm, and the width W S3 The value range of is 3.0 - 5.0 mm. The width W of the horizontal branch of the L-shaped slot S4 The preferred value range of is 11.0 - 13.0 mm, and the length L S3 The preferred value range of is 6.4 - 7.4 mm. In a preferred example, the size of the vertical branch in the L-shaped slot is L F *W S3 = 8 * 4.0 mm, and the size of the horizontal branch is L S3 *W S4 = 7.4 * 12.0 mm.

[0060] In a preferred example of this embodiment, the dielectric constant of the dielectric layer is 4.4, the dielectric loss is 0.02, and the thickness is 0.8 mm; the metal layer is copper-plated, and the thickness is 0.035 mm.

[0061] Next, the expected antenna performance achievable by the preferred value of the key parameters in the miniaturized ultra-wideband antenna with notch characteristics provided above in this embodiment will be verified through experimental data.

[0062] As Figure 6 shown, it is the variation of the ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter L S1 variation. It can be seen that as the length L of the vertical slot of the T-shaped notch slot in the radiation layer S1 increases, the reflection coefficient of the antenna will slightly deteriorate at frequencies lower than the notch center frequency and improve at frequencies higher than the notch center frequency, and the bandwidth remains almost unchanged; the notch center frequency shifts downward, and the isolation at the notch center frequency improves. Based on this, in this embodiment, by limiting the length L of the vertical slot of the T-shaped notch slot S1 to a preferred value range of 2.5 - 4.5 mm, with an optimal value of 4.5 mm, the antenna can achieve high matching in the passband and high isolation at the notch center within the preferred value range, especially achieving the best effect at the optimal value.

[0063] As Figure 7 shown, it is the variation of the ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter L S2 variation. It can be seen that as the length L of the horizontal slot of the T-shaped notch slot in the radiation layer S2 increases, the reflection coefficient of the antenna deteriorates at frequencies lower than the notch center frequency and improves at frequencies higher than the notch center frequency, and the bandwidth remains almost unchanged; the notch center frequency shifts downward, and the isolation at the center frequency improves slightly. Based on this, in this embodiment, by limiting the length L of the horizontal slot of the T-shaped notch slot in the radiation layer S2The preferred value range is 2.2 - 4.2 mm, and the optimal value is 4.2 mm, which can enable the antenna to obtain high matching in the passband and high isolation at the notch center within the preferred value range. Especially when at the optimal value, the best effect can be obtained.

[0064] As Figure 8 shown, it is the variation of the ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter L S3 changing. It can be seen that as the length L S3 of the horizontal branch of the L-shaped slot in the sunken ground increases, the reflection coefficient of the antenna improves within the passband, and the bandwidth increases; the notch center frequency slightly shifts downward, and the isolation at the center frequency remains almost unchanged. Based on this, in this embodiment, by defining the preferred value range of the length L S3 of the horizontal branch of the L-shaped slot in the sunken ground as 6.4 - 7.4 mm, and the optimal value as 7.4 mm, it can enable the antenna to obtain high matching in the passband and high isolation at the notch center within the preferred value range. Especially when at the optimal value, the best effect can be obtained.

[0065] As Figure 9 shown, it is the variation of the ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter W S1 changing. It can be seen that as the width W S1 of the vertical slot of the T-shaped notch slot in the radiation layer increases, the reflection coefficient of the antenna remains almost unchanged within the passband, and the bandwidth remains almost unchanged; the notch center frequency shifts downward, and the isolation at the notch center frequency improves. Based on this, in this embodiment, by defining the preferred value range of the width W S1 of the vertical slot of the T-shaped notch slot as 0.1 - 0.3 mm, and the optimal value as 0.2 mm, it can enable the antenna to obtain high matching in the passband and high isolation at the notch center within the preferred value range. Especially when at the optimal value, the best effect can be obtained.

[0066] As Figure 10 shown, it is the variation of the ultra-wideband antenna provided in this embodiment with respect to the parameter W S3 changing. It can be seen that as the width W S3 of the vertical branch of the L-shaped slot opened in the sunken ground increases, the reflection coefficient of the antenna improves at frequencies lower than the notch center frequency, deteriorates at frequencies higher than the notch center frequency, and the bandwidth narrows; the notch center frequency shifts upward, and the isolation at the notch center frequency remains unchanged. Based on this, in this embodiment, by defining the value range of the width W S3 of the vertical branch in the L-shaped slot as 3.0 - 5.0 mm, and the optimal value as 4.0 mm, it can enable the antenna to obtain high matching in the passband and high isolation at the notch center within the preferred value range. Especially when at the optimal value, the best effect can be obtained.

[0067] AsFigure 11 As shown, the ultra-wideband antenna provided in this embodiment follows the parameter W S4 It can be seen that as the width W of the cross branch of the L-shaped gap in the depression stratum increases S4 As the reflection coefficient of the antenna increases, it deteriorates at frequencies below the notch center frequency and deteriorates at frequencies above the notch center frequency, and the bandwidth becomes narrower; as the notch center frequency moves upward, the isolation at the notch center frequency deteriorates. Based on this, in this embodiment, by limiting the width W of the horizontal branch of the L-shaped slot S4 The preferred value range is 11.0-13.0mm, and the optimal value is 12.0mm, which will enable the antenna to obtain high matching in the passband and high isolation at the center of the notch within the preferred value range, especially at the optimal value, to obtain the best effect.

[0068] like Figure 12 As shown, the ultra-wideband antenna provided in this embodiment follows the parameter W S3 Changes in the changes. It can be seen that as the distance D3 from the vertical slot of the T-shaped notch slot to the edge of the rectangular radiation patch increases, the reflection coefficient of the antenna becomes better in the passband, but the bandwidth remains almost unchanged; the notch center frequency moves up slightly, and the isolation at the notch center frequency first becomes better and then worse. Based on this, in this embodiment, by limiting the preferred value range of the distance D3 from the vertical slot of the T-shaped notch slot to the edge of the rectangular radiation patch to 2.7-4.7mm and the optimal value to 3.7mm, the antenna can obtain high matching in the passband and high isolation at the notch center within the preferred value range, especially at the optimal value, to obtain the best effect.

[0069] Based on the above analysis, combined with Figure 4 and Figure 5 , the optimization parameter examples of the ultra-wideband antenna provided in this embodiment are as follows:

[0070] L G =20.5mm, W G =22.0mm, L S1 =4.5mm, L S2 =4.2mm, L S3 =7.4mm, L R =7.0mm, L F =8.0mm,

[0071] W R =8.0mm, W S1 =0.2mm, W S2 =0.1mm, W S3 =4.0mm,W S4 =12.0mm,W F= 1.53 mm, D1 = 7.0 mm, D2 = 9.2 mm, D3 = 3.7 mm.

[0072] As Figure 13 shown, it is the simulation result of the reflection coefficient of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. It can be seen that the bandwidth range where the reflection coefficient of this antenna is less than -10 dB is from 3.22 to 9.44 GHz, the center frequency is 6.33 GHz, the absolute bandwidth is 6.22 GHz, and the relative bandwidth is 98.3%, showing the characteristics of ultra-wideband. At the same time, within the bandwidth range, there is also a notch located at 4.72 GHz.

[0073] As Figure 14 shown, it is the simulation result of the gain and radiation efficiency of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. Among them, the arrow is used to indicate which vertical coordinate axis the corresponding curve corresponds to. It can be seen that the average maximum gain of this antenna within the passband range is 4.12 dBi, showing the characteristic of high gain; the average radiation efficiency within the passband range is 93.5%, showing the characteristic of high radiation efficiency. At the center frequency of the notch, there is an in-band suppression as high as 9.6 dB.

[0074] As Figures 15 - 17 shown, it is the radiation pattern of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. It can be seen that this miniaturized ultra-wideband antenna is an omnidirectional antenna and has high gain.

[0075] Embodiment 3

[0076] This embodiment is further expanded based on Embodiment 1 or Embodiment 2, and provides a communication device including the ultra-wideband antenna with notch characteristics in Embodiment 1 or Embodiment 2 above.

[0077] In some specific embodiments, the communication device may be a mobile intelligent terminal device (such as a mobile phone, walkie-talkie, tablet, etc.), or may also be other devices that need to use an antenna to meet the wireless communication requirements.

[0078] The communication device provided in this embodiment, by being equipped with the miniaturized ultra-wideband antenna with notch characteristics provided in Embodiment 1 or Embodiment 2, utilizes its ultra-wideband, omnidirectional, high-gain antenna performance and miniaturized characteristics. At the same time, it also has the characteristic of effectively suppressing in-band interference, which will be able to significantly improve the wireless communication performance of the communication device.

[0079] The above are only the embodiments of the present invention, and do not limit the patent scope of the present invention. Any equivalent transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in the relevant technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. An ultra-wideband antenna with notch characteristics, characterized in that: It comprises a radiation layer, a dielectric layer and a recessed formation which are stacked in sequence; the radiation layer comprises a rectangular radiation patch, a microstrip feeder and a T-shaped wave trap slot; one end of the microstrip feeder is connected to one side of the rectangular radiation patch; the rectangular radiation patch is provided with the T-shaped wave trap slot; the recessed formation is provided with an L-shaped slot; the horizontal branch of the L-shaped slot corresponds to the rectangular radiation patch.

2. The ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The T-shaped notch gap includes a horizontal gap and a vertical gap; the horizontal gap is perpendicular to the vertical gap.

3. The ultra-wideband antenna with notch characteristics as claimed in claim 2, characterized in that: The vertical slot and the microstrip feed line are on the same straight line; and the vertical slot is far away from the microstrip feed line.

4. The ultra-wideband antenna with notch characteristics as claimed in claim 3, characterized in that: One end of the vertical slot is connected to the horizontal slot, and the other end is connected to the edge of the rectangular radiation patch.

5. The ultra-wideband antenna with notch characteristics as claimed in claim 2, characterized in that: The length of the transverse gap of the T-shaped notch gap ranges from 2.2 to 4.2 mm, and the width ranges from 0.1 to 0.3 mm; the length of the vertical gap of the T-shaped notch gap ranges from 2.5 to 4.5 mm, and the width ranges from 0.1 to 0.3 mm.

6. The ultra-wideband antenna with notch characteristics as claimed in claim 2, characterized in that: The distance between the vertical gap of the T-shaped notch gap and the edge position of the rectangular radiation patch corresponding to the L-shaped gap ranges from 2.7 to 4.7 mm.

7. The ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The length of the rectangular radiation patch ranges from 6.0 to 8.0 mm, and the width ranges from 7.0 to 9.0 mm; the length of the microstrip feed line ranges from 7.0 to 9.0 mm, and the width ranges from 1.5 to 1.6 mm.

8. The ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The length of the horizontal branch of the L-shaped gap ranges from 6.4 to 7.4 mm, and the width ranges from 11.0 to 13.0 mm; the width of the vertical branch of the L-shaped gap ranges from 3.0 to 5.0 mm, and the length ranges from 7.0 to 9.0 mm.

9. The ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The vertical branch of the L-shaped slot is located at the edge of the depressed stratum; the vertical branch is parallel to the microstrip feed line.

10. A communication device, characterized in that: An ultra-wideband antenna with notch characteristics comprising any one of claims 1 to 9.