Ka frequency band power amplification phase shift assembly

Abstract

The utility model provides a Ka frequency band power amplification phase shift assembly, which solves the problems of power flatness and the like and comprises an equipment shell, and a power division network module, an amplification network module, a phase shift network module, an attenuation network module, a driving network module and a control circuit are arranged in the equipment shell. The power division network module is integrally connected with the equipment shell and is fixed on the front surface of the equipment shell, the power division network module is provided with four output ports, each output port is respectively connected in series with an attenuation network module, a phase shift network module, a driving network module and an amplification network module through SMA connectors, and the attenuation network module and the phase shift network module are respectively provided with a control needle. The control circuit is installed at the bottom of the equipment shell and connected with the control needle. The utility model has the advantages of good output power flatness, stable structure and the like.

Description

Technical Field

[0001] The utility model belongs to the technical field of wireless communication, and particularly relates to a Ka-band power amplification phase-shifting component. Background Art

[0002] In recent decades, the Ka band has been widely used in radar and guidance systems, electronic countermeasures, Ka-band communication, etc. Compared with microwaves, the millimeter wave band has a short wavelength and a high frequency, so it can provide a very wide bandwidth. On the other hand, due to the high frequency band, there are few interference sources, so the propagation is stable and reliable. In the application of phased array radars, since the loss of the Ka band in space transmission is very large, in order to increase the transmission distance, there are high requirements for the output power of the Ka-band amplification component. The Ka-band power amplification phase-shifting component can be said to be one of the core components in the radar system. Its main function is to drive the radio frequency signal to achieve an amplification effect, and at the same time has a phase-shifting function. The quality of indicators such as the phase shift accuracy and response speed of the phase shifter directly affects the accuracy and scanning speed of the antenna beam, and plays a key role in the performance of the radar. However, the current Ka-band amplification phase-shifting components are difficult to achieve high power and small volume, and at the same time, the power flatness is poor.

[0003] In order to solve the deficiencies of the existing technology, people have carried out long-term explorations and proposed various solutions. For example, a Chinese patent document discloses a KA-band high-power amplifier [202010162014.9], which includes a frequency conversion unit, a power amplifier unit, a power supply unit, and a monitoring unit; among them, the frequency conversion unit is connected to a crystal oscillator generating a 10 MHz reference signal through a first filter; the monitoring unit is provided with a 10 / 100M Ethernet interface for communication connection with external devices.

[0004] The above solution solves the problem of Ka-band power amplification to a certain extent, but there are still many deficiencies in this solution, such as the problem of power flatness. Summary of the Invention

[0005] The purpose of the utility model is to provide a Ka-band power amplification phase-shifting component with reasonable design and good power flatness for the above problems.

[0006] To achieve the above object, the present utility model adopts the following technical solutions: A Ka-band power amplification phase-shifting component, comprising a device housing, in which a power distribution network module, an amplification network module, a phase-shifting network module, an attenuation network module, a drive amplification network module and a control circuit are arranged. The power distribution network module is integrally connected to the device housing and fixed on the front of the device housing. The power distribution network module has four output ports, and each output port is respectively connected in series with an attenuation network module, a phase-shifting network module, a drive amplification network module and an amplification network module through an SMA connector. The attenuation network module and the phase-shifting network module are respectively provided with control pins, and the control circuit is installed at the bottom of the device housing and connected to the control pins.

[0007] In the above-mentioned Ka-band power amplification phase-shifting component, the power distribution network module adopts an L / C power distribution circuit design, which includes 3 identical L / C two-way power distribution circuits. The input signal is successively passed through one L / C two-way power distribution circuit and then divided into two paths to enter two parallel L / C two-way power distribution circuits, and then divided into two paths to enter two parallel L / C two-way power distribution circuits to obtain four-way power distribution signals.

[0008] In the above-mentioned Ka-band power amplification phase-shifting component, the phase-shifting network module respectively includes fourteen CMOS electronic switching switches, seven groups of L / C sub-phase-shifting networks and seven groups of reference transmission lines. Each two CMOS electronic switching switches, one group of L / C sub-phase-shifting networks and one group of reference transmission lines form a phase control state circuit.

[0009] In the above-mentioned Ka-band power amplification phase-shifting component, the phase control state circuit is formed by connecting one group of L / C sub-phase-shifting networks and one group of reference transmission lines in parallel, and connecting one CMOS electronic switching switch in series at both ends of the node where the two are connected in parallel. And the seven groups of phase control state circuits are cascaded in ascending order of phase shift amount.

[0010] In the above-mentioned Ka-band power amplification phase-shifting component, the seven groups of L / C sub-phase-shifting networks are respectively a 5.625° sub-phase shifter, an 11.25° sub-phase shifter, a 22.5° sub-phase shifter, a 45° sub-phase shifter, a 90° sub-phase shifter, a 180° sub-phase shifter, and a 360° sub-phase shifter.

[0011] In the above-mentioned Ka-band power amplification phase-shifting component, the attenuation network module includes twelve CMOS electronic switching switches and six groups of L / C sub-attenuation networks.

[0012] In the above-mentioned Ka-band power amplification phase-shifting component, the six groups of L / C sub-attenuation networks are respectively a 0.5dB sub-attenuator, a 1dB sub-attenuator, a 2dB sub-attenuator, a 4dB sub-attenuator, an 8dB sub-attenuator, and a 16dB sub-attenuator.

[0013] In the above-mentioned Ka-band power amplification and phase shift module, the drive and amplification network module is respectively connected to the output port of the attenuation network module; the amplification network module is respectively connected to the output port of the drive and amplification network module, the output end of the amplification network module is connected to the isolator, and the output port of the isolator is connected to the RF output port.

[0014] In the above-mentioned Ka-band power amplification and phase shift module, a DC-DC power module is built into the device housing. The operating temperature of the DC-DC power module is -40°C to 125°C, the maximum output current is 6A, the maximum power it can withstand is 72W, the efficiency is 85%, the power supply provided by this phase shift module is +12V, and the output voltage through the DC-DC power module is +6V.

[0015] In the above-mentioned Ka-band power amplification and phase shift module, an RF circuit board is built into the device housing, and the RF circuit board is fixed in the shielding cavity.

[0016] Compared with the existing technology, the advantages of the present utility model are as follows: The power distribution network module is connected with multiple outputs, and its phase and amplitude are adjustable, thereby improving the power flatness of the power amplification and phase shift circuit; each circuit module is integrally packaged in the device housing, reducing the overall volume of the power amplification and phase shift module; The control circuit technology with a CPLD architecture is adopted, and the control response speed is within 30nS, which can meet the requirements of all platforms for the phase shift speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic structural diagram of the present utility model;

[0018] Figure 2 is a schematic structural diagram of another perspective of the present utility model;

[0019] Figure 3 is a schematic principle diagram of the present utility model;

[0020] Figure 4 is a schematic principle framework diagram of the present utility model;

[0021] Figure 5 is a schematic principle framework diagram of the phase shift network module of the present utility model;

[0022] Figure 6 is another schematic principle framework diagram of the phase shift network module of the present utility model;

[0023] Figure 7 is a schematic principle framework diagram of the attenuation network module of the present utility model;

[0024] Figure 8 is a schematic principle framework diagram of the attenuation network module of the present utility model;

[0025] Figure 9It is the principle framework diagram of the driving and releasing network module of the present utility model;

[0026] Figure 10 It is the principle framework diagram of the power distribution network module of the present utility model;

[0027] In the figure, there are device housing 1, DC-DC power module 11, power distribution network module 2, L / C two-way power distribution circuit 21, amplification network module 3, phase shift network module 4, L / C sub-phase shift network 41, reference transmission line 42, 5.625° sub-phase shifter 43, 11.25° sub-phase shifter 44, 22.5° sub-phase shifter 45, 45° sub-phase shifter 46, 90° sub-phase shifter 47, 180° sub-phase shifter 48, 360° sub-phase shifter 49, attenuation network module 5, L / C sub-attenuation network 51, 0.5dB sub-attenuator 52, 1dB sub-attenuator 53, 2dB sub-attenuator 54, 4dB sub-attenuator 55, 8dB sub-attenuator 56, 16dB sub-attenuator 57, driving and releasing network module 6, isolator 61, control circuit 7, and CMOS electronic switch 8. Detailed implementation manners

[0028] The following further elaborates on the present utility model in detail in conjunction with the accompanying drawings and specific implementation manners.

[0029] As Figures 1-10 shown, a Ka-band power amplification and phase shift component includes a device housing 1. The device housing 1 internally houses a power distribution network module 2, an amplification network module 3, a phase shift network module 4, an attenuation network module 5, a driving and releasing network module 6, and a control circuit 7. The power distribution network module 2 is integrally connected to the device housing 1 and fixed on the front of the device housing 1. The power distribution network module 2 equally divides the input radio frequency signal into four outputs. The power distribution network module 2 has four output ports, and each output port is respectively connected in series with an attenuation network module 5, a phase shift network module 4, a driving and releasing network module 6, and an amplification network module 3 through SMA connectors. The attenuation network module 5 and the phase shift network module 4 are respectively provided with control pins. The control circuit 7 is installed at the bottom of the device housing 1 and is connected to the control pins. The phase shift network module 4 performs phase shift on the power-divided signal. The control circuit 7 controls the phase shift amount of the phase shift network with the phase shift network module 4. The attenuation network module 5 attenuates the phase-shifted signal, and the attenuation network module 5 amplifies the signal. The DC-DC power module 11 is connected to the driving and releasing network module 6 to supply power to the gate and drain of the driving and releasing network, ensuring the normal operation of the power amplifier.

[0030] The control circuit 7 is composed of components such as a processor and an interface chip, and controls the attenuation state and phase shift state of the device.

[0031] Specifically, the power splitting network module 2 distributes the radio frequency signals from 32 GHz to 34 GHz. It adopts an L / C power splitting circuit design, which includes 3 identical L / C two-way power splitting circuits 21. The input signal passes through one L / C two-way power splitting circuit 21 in sequence and then is divided into two paths and enters two parallel L / C two-way power splitting circuits 21, and then is divided into two paths and enters two parallel L / C two-way power splitting circuits 21 to obtain four-way power splitting signals.

[0032] In-depth, there are a total of four phase shifting network modules 4, which respectively perform six-bit numerically controlled phase shifting on the radio frequency signals from 32 GHz to 34 GHz. They respectively include fourteen CMOS electronic switches 8, seven groups of L / C sub-phase shifting networks 41, and seven groups of reference transmission lines 42. Every two CMOS electronic switches 8, one group of L / C sub-phase shifting network 41, and one group of reference transmission lines 42 form a phase control state circuit.

[0033] Furthermore, the phase control state circuit is formed by connecting one group of L / C sub-phase shifting network 41 and one group of reference transmission lines 42 in parallel, and connecting one CMOS electronic switch 8 in series at both ends of the node where the two are connected in parallel. And the seven groups of phase control state circuits are cascaded in ascending order of the phase shift amount.

[0034] Even further, the seven groups of L / C sub-phase shifting networks 41 are respectively a 5.625° sub-phase shifter 43, an 11.25° sub-phase shifter 44, a 22.5° sub-phase shifter 45, a 45° sub-phase shifter 46, a 90° sub-phase shifter 47, a 180° sub-phase shifter 48, and a 360° sub-phase shifter 49. By the corresponding CMOS electronic switch 8, it is selected whether to pass through the corresponding sub-phase shifter or the reference transmission line 42 to perform phase control on the input signal in seven states, which are 5.625°, 11.25°, 45°, 90°, 180°, 360°.

[0035] Finally, the six phase control states are cascaded in ascending order of the phase shift amount. Through the cascading of each sub-phase shifter, the device realizes six sub-phase shifting states of 5.625°, 11.25°, 45°, 90°, 180°, and 360° in the frequency range of 32 GHz to 34 GHz, with a maximum phase shift amount of 360°. The overall insertion loss ≤ 13 dB, and the phase shift speed of the overall device is less than 500 nS under working conditions.

[0036] In addition, the attenuation network module 5 performs six-bit numerically controlled attenuation on the radio frequency signals from 32 GHz to 34 GHz. It includes twelve CMOS electronic switches 8 and six groups of L / C sub-attenuation networks 51.

[0037] Meanwhile, the six groups of L / C sub-attenuation networks 51 are respectively a 0.5dB sub-attenuator 52, a 1dB sub-attenuator 53, a 2dB sub-attenuator 54, a 4dB sub-attenuator 55, an 8dB sub-attenuator 56, and a 16dB sub-attenuator 57. Therefore, the corresponding CMOS electronic switching switch 8 is used to select whether to perform amplitude control on the input signal in six states through the corresponding sub-attenuator, which are 0.5dB, 1dB, 2dB, 4dB, 8dB, and 16dB respectively.

[0038] Visibly, there are a total of 4 driving and amplifying network modules 6, which are respectively connected to the output ports of the attenuation network module 5 to amplify the attenuated signal; the amplifying network module 3 amplifies the 32GHz - 34GHz radio frequency signal and is respectively connected to the output ports of the driving and amplifying network modules 6. The output end of the amplifying network module 3 is connected to the isolator 61, and the output port of the isolator 61 is connected to the radio frequency output port. The driving and amplifying network modules 6 and the driving and amplifying network modules 6 are the main microwave circuit parts of the emitter, mainly completing the function of power amplifying the 2GHz bandwidth signal in the Ka band.

[0039] Obviously, the device housing 1 is internally provided with a DC-DC power module 11. The operating temperature of the DC-DC power module 11 is -40°C to 125°C, the maximum output current is 6A, the maximum power it can withstand is 72W, and the efficiency is 85%. The power supply provided by this phase shifter component is +12V, and the output voltage through the DC-DC power module 11 is +6V.

[0040] Preferably, the device housing 1 is internally provided with a radio frequency circuit board, and the radio frequency circuit board is fixed in a shielding cavity. The size of the device housing 1 is 100mm × 75mm × 15mm, and the volume is less than 1 / 2 of that of a conventional device, making this device have the advantage of miniaturization.

[0041] In summary, the principle of this embodiment is as follows: The power splitting network module 2 splits the input RF signal into four equal-power outputs and transmits them to the phase-shifting network module 4 to perform phase shifting on the split signals. The control circuit 7 is connected to the phase-shifting network module 4 to control the phase shift amount of the phase-shifting network module 4. The output end of the phase-shifting network module 4 will output the phase-shifted RF signal controlled by the control circuit 7. The phase-shifting network module 4 transmits the output signal to the attenuation network module 5 to attenuate the phase-shifted signal. The control circuit 7 is connected to the attenuation network module 5 to control the attenuation amount of the attenuation network module 5. The output end of the attenuation network module 5 will output the attenuated RF signal controlled by the control circuit 7. The attenuation network module 5 transmits the output signal to the driving and amplifying network module 6 to amplify the power of the attenuated signal. The DC-DC power module 11 is connected to the driving and amplifying network module 6 to supply power to the gate and drain of the driving amplifier to ensure the normal operation of the driving amplifier. The driving and amplifying network module 6 transmits the output signal to the amplifying network module 3 to further amplify the power of the amplified signal. The DC-DC power module 11 is connected to the amplifying network module 3 to supply power to the gate and drain of the power amplifier network to ensure the normal operation of the power amplifier.

[0042] The specific embodiments described herein are merely illustrative of the spirit of the present invention. Those skilled in the art of the present invention can make various modifications or supplements to the described specific embodiments or use similar methods for substitution, but will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

[0043] Although terms such as device housing 1, DC-DC power module 11, power splitting network module 2, L / C two-way power splitting circuit 21, amplifying network module 3, phase-shifting network module 4, L / C sub-phase-shifting network 41, reference transmission line 42, 5.625° sub-phase shifter 43, 11.25° sub-phase shifter 44, 22.5° sub-phase shifter 45, 45° sub-phase shifter 46, 90° sub-phase shifter 47, 180° sub-phase shifter 48, 360° sub-phase shifter 49, attenuation network module 5, L / C sub-attenuation network 51, 0.5dB sub-attenuator 52, 1dB sub-attenuator 53, 2dB sub-attenuator 54, 4dB sub-attenuator 55, 8dB sub-attenuator 56, 16dB sub-attenuator 57, driving and amplifying network module 6, isolator 61, control circuit 7, CMOS electronic switch 8 are used more frequently in this article, the possibility of using other terms is not excluded. Using these terms is only to more conveniently describe and explain the essence of the present invention; interpreting them as any additional limitation is contrary to the spirit of the present invention.

Claims

1. A Ka-band power amplifier phase shifting component, comprising a device housing (1), wherein the device housing (1) has a built-in power division network module (2), an amplifier network module (3), a phase shifting network module (4), an attenuation network module (5), a driving network module (6) and a control circuit (7), characterized in that: The power division network module (2) is integrally connected to the device housing (1) and fixed on the front of the device housing (1); the power division network module (2) has four output ports, and each output port is respectively connected in series with an attenuation network module (5), a phase shift network module (4), a drive network module (6) and an amplification network module (3) via an SMA connector; the attenuation network module (5) and the phase shift network module (4) are respectively provided with a control pin; and the control circuit (7) is installed at the bottom of the device housing (1) and connected to the control pin.

2. The Ka-band power amplifier phase shifting component according to claim 1, characterized in that: The power division network module (2) adopts an L / C power division circuit design, which includes three identical L / C two-power division circuits (21). The input signal passes through one L / C two-power division circuit (21) in turn and is then divided into two paths and enters two parallel L / C two-power division circuits (21), and then is divided into two paths and enters two parallel L / C two-power division circuits (21), thereby obtaining a four-path power division signal.

3. The Ka-band power amplifier phase shifting component according to claim 1, characterized in that: The phase shift network module (4) comprises fourteen CMOS electronic switching switches (8), seven groups of L / C sub-phase shift networks (41) and seven groups of reference transmission lines (42), and every two CMOS electronic switching switches (8), one group of L / C sub-phase shift networks (41) and one group of reference transmission lines (42) form a phase control state circuit.

4. The Ka-band power amplifier phase shifting component according to claim 3, characterized in that: The phase control state circuit is connected in parallel in the form of a group of L / C sub-phase shift networks (41) and a group of reference transmission lines (42), and a CMOS electronic switching switch (8) is connected in series at both ends of the node where the two are connected in parallel, and seven groups of phase control state circuits are cascaded from small to large according to the phase shift amount.

5. The Ka-band power amplifier phase shifting component according to claim 4, characterized in that: The seven groups of L / C sub-phase shift networks (41) are respectively a 5.625° sub-phase shifter (43), an 11.25° sub-phase shifter (44), a 22.5° sub-phase shifter (45), a 45° sub-phase shifter (46), a 90° sub-phase shifter (47), a 180° sub-phase shifter (48), and a 360° sub-phase shifter (49).

6. The Ka-band power amplifier phase shifting component according to claim 1, characterized in that: The attenuation network module (5) comprises twelve CMOS electronic switching switches (8) and six groups of L / C sub-attenuation networks (51).

7. The Ka-band power amplification phase shifting component according to claim 6, characterized in that: The six groups of L / C sub-attenuation networks (51) are respectively a 0.5 dB sub-attenuator (52), a 1 dB sub-attenuator (53), a 2 dB sub-attenuator (54), a 4 dB sub-attenuator (55), an 8 dB sub-attenuator (56), and a 16 dB sub-attenuator (57).

8. The Ka-band power amplifier phase shifting component according to claim 1, characterized in that: The driving and releasing network modules (6) are respectively connected to the output ports of the attenuation network modules (5); the amplifying network modules (3) are respectively connected to the output ports of the driving and releasing network modules (6); the output end of the amplifying network module (3) is connected to the isolator (61); and the output port of the isolator (61) is connected to the radio frequency output port.

9. The Ka-band power amplifier phase shifting component according to claim 1, characterized in that: The device housing (1) has a built-in DC-DC power module (11). The DC-DC power module (11) has an operating temperature of -40°C to 125°C, a maximum output current of 6A, a maximum withstand power of 72W, and an efficiency of 85%. The phase shift component provides a power supply of +12V, and the output voltage through the DC-DC power module (11) is +6V.

10. The Ka-band power amplification phase shifting component according to claim 1, characterized in that: The device housing (1) has a built-in radio frequency circuit board, and the radio frequency circuit board is fixed in the shielding cavity.

Images