Insulated gate bipolar transistor module

Abstract

The utility model provides an insulated gate bipolar transistor module, which is characterized in that a plurality of printed boards are arranged on a bottom board in parallel, a plurality of bridge arms are respectively and independently arranged on one printed board, a power input terminal is connected between an upper bridge arm and a lower bridge arm, and a first power output terminal and a second power output terminal are respectively connected at two ends of each bridge arm. The G pole control terminal, the E pole signal terminal and the C pole signal terminal are respectively connected with a circuit after the G poles of the bridge arms are connected in parallel, a circuit after the E poles of the bridge arms are connected in parallel and a circuit after the C poles of the bridge arms are connected in parallel, and the G pole signal terminal of the upper bridge arm and the G pole signal terminal of the lower bridge arm are respectively connected with a circuit after the G poles of the upper bridge arm are connected in parallel and a circuit after the G poles of the lower bridge arm are connected in parallel. According to the utility model, a plurality of chips are connected in parallel to realize the centralized control of a plurality of devices, and the rated current of the module is greatly increased.

Description

Technical Field

[0001] The utility model relates to an insulated gate bipolar transistor module. Background Art

[0002] The IGBT module is a composite fully controlled voltage-driven power semiconductor device, which is widely used in the drive control of equipment. Existing equipment uses a single module for control alone, resulting in a large volume of the control module and complex wiring, occupying a large space in the equipment and being not easy to repair. Content of the Utility Model

[0003] To solve the above technical problems, the utility model provides an insulated gate bipolar transistor module.

[0004] The utility model is achieved through the following technical solutions.

[0005] An insulated gate bipolar transistor module provided by the utility model is characterized by comprising:

[0006] A plurality of parallel-connected bridge arms, each bridge arm includes a series-connected upper bridge arm and a lower bridge arm, and the upper bridge arm and the lower bridge arm in each bridge arm are connected in series;

[0007] A printed circuit board, on which a plurality of independent conductive plates are provided;

[0008] Power terminals, including a first power output terminal, a second power output terminal and a power input terminal,

[0009] Signal terminals, including a G-pole control terminal, an upper bridge arm G-pole signal terminal, an E-pole signal terminal, a C-pole signal terminal, and a lower bridge arm G-pole signal terminal installed at the edge of the bottom plate;

[0010] A plurality of printed circuit boards are installed in parallel on the bottom plate, a plurality of bridge arms are separately installed on one printed circuit board, the power input terminal is connected between the upper bridge arm and the lower bridge arm, the first power output terminal and the second power output terminal are respectively connected to both ends of the bridge arm, the G-pole control terminal, the E-pole signal terminal, and the C-pole signal terminal are respectively connected to the lines after parallel connection of the G-poles of the bridge arms, the lines after parallel connection of the E-poles, and the lines after parallel connection of the C-poles, and the upper bridge arm G-pole signal terminal and the lower bridge arm G-pole signal terminal are respectively connected to the lines after parallel connection of the G-poles of the upper bridge arm and the lines after parallel connection of the G-poles of the lower bridge arm.

[0011] The guide bar plate includes a lower bridge arm copper plate and an upper bridge arm copper plate. Both the lower bridge arm copper plate and the upper bridge arm copper plate are in a "convex" shape, and they are parallel and staggered in the middle of the bridge arm. One end of the wide end of the lower bridge arm copper plate extends to the upper bridge arm copper plate and surrounds one adjacent end of the upper bridge arm copper plate. A power terminal transfer plate is also provided on the bridge arm. The adjacent sides of the power terminal transfer plate are adjacent and parallel to the wide end of the upper bridge arm copper plate and the narrow end of the lower bridge arm copper plate respectively. At the two ends of the bridge arm, a C - pole signal bus bar, a G - pole signal bus bar, and an intermediate plate are sequentially provided from the outside to the inside.

[0012] Each upper bridge arm and lower bridge arm is composed of two IGBT chips and FRD chips.

[0013] In the upper bridge arm, the C - pole of the IGBT chip and the cathode weld of the FRD chip are respectively welded on the upper bridge arm copper plate. The E - pole of the IGBT chip is connected to the anode of the FRD chip through a bonding wire. The G - pole of the IGBT chip is connected to the adjacent intermediate plate through a bonding wire. The two poles of a thermistor are respectively welded on the intermediate plate and its adjacent G - pole signal bus bar. The anode of the FRD chip is connected to the wide end of the upper bridge arm copper plate through a bonding wire.

[0014] In the lower bridge arm, the C - pole of the IGBT chip and the cathode weld of the FRD chip are respectively welded on the lower bridge arm copper plate. The E - pole of the IGBT chip is connected to the anode of the FRD chip through a bonding wire. The G - pole of the IGBT chip is connected to the adjacent intermediate plate through a bonding wire. The two poles of a thermistor are respectively welded on the intermediate plate and its adjacent G - pole signal bus bar. The anode of the FRD chip is connected to the power terminal transfer plate through a bonding wire. The power terminal transfer plate is also connected to the C - pole signal bus bar far away from it through a bonding wire. The wide end of the lower bridge arm copper plate is connected to the C - pole signal bus bar far away from it through a bonding wire.

[0015] The first power output terminal, the second power output terminal, and the power input terminal are all composed of several contact plates. The several contact plates are fixed at the lower end of the IGBT chip through lead - out terminals. The upper end of the bus bar plate is provided with several lead - out terminals.

[0016] The lead - out terminals in the first power output terminal are respectively welded on the wide ends of the upper bridge arm copper plates in each bridge arm.

[0017] The lead - out terminals in the second power output terminal are respectively welded on the power terminal transfer plates of each bridge arm.

[0018] Each lead - out terminal in the power input terminal is welded on the wide end of the lower bridge arm copper plate in each bridge arm.

[0019] The upper bridge arm G - pole signal terminal and the lower bridge arm G - pole signal terminal are respectively arranged on both sides of the bridge arm at the edge of the bottom plate, and are both connected to their adjacent G - pole signal bus bars through bonding wires.

[0020] The E - pole signal terminal and the C - pole signal terminal are respectively arranged on both sides of the bridge arm at the edge of the bottom plate, and are both connected to the adjacent C - pole signal bus bar through bonding wires;

[0021] The G - pole control terminal is connected to the G - pole signal bus bar in any one of the bridge arms through a bonding wire.

[0022] The beneficial effect of the utility model is that centralized control of multiple devices is realized by paralleling multiple chips, and the rated current of the module is greatly increased. Description of the Drawings

[0023] Figure 1 is a schematic structural diagram of the utility model;

[0024] Figure 2 is a schematic structural diagram of the printed circuit board of the utility model;

[0025] Figure 3 is a schematic structural diagram after bonding of the utility model;

[0026] Figure 4 is a schematic structural diagram of the power terminal of the utility model;

[0027] In the figure: 1 - bottom plate, 2 - bridge arm, 3 - first power output terminal, 4 - second power output terminal, 5 - mounting hole, 6 - G - pole control terminal, 7 - upper - bridge - arm G - pole signal terminal, 8 - E - pole signal terminal, 9 - C - pole signal terminal, 10 - lower - bridge - arm G - pole signal terminal, 11 - power input terminal, 12 - C - pole signal bus bar, 13 - resistance soldering point, 14 - printed circuit board, 15 - lower - bridge - arm copper plate, 16 - power - terminal adapter plate, 17 - G - pole signal bus bar, 18 - intermediate plate, 19 - upper - bridge - arm copper plate, 20 - thermistor, 21 - IGBT chip, 22 - FRD chip, 23 - bonding wire, 24 - bus bar plate, 25 - lead - out terminal, 26 - bridging plate, 27 - contact plate. Detailed Embodiments

[0028] The technical solution of the present utility model will be further described below, but the scope of protection claimed is not limited thereto.

[0029] An insulated gate bipolar transistor module, characterized by comprising:

[0030] A plurality of parallel - connected bridge arms 2, each bridge arm 2 includes a series - connected upper bridge arm and a lower bridge arm, and the upper bridge arm and the lower bridge arm in each bridge arm are connected in series;

[0031] A printed circuit board 14, on which a plurality of independent conductive plates are provided;

[0032] A power terminal, comprising a first power output terminal 3, a second power output terminal 4 and a power input terminal 11,

[0033] A signal terminal, comprising a G - pole control terminal 6, an upper - arm G - pole signal terminal 7, an E - pole signal terminal 8, a C - pole signal terminal 9, and a lower - arm G - pole signal terminal 10 mounted on the edge of a base plate 1;

[0034] A plurality of printed circuit boards 14 are mounted in parallel on the base plate 1. A plurality of bridge arms are respectively and separately mounted on one printed circuit board 14. The power input terminal 11 is connected between the upper bridge arm and the lower bridge arm. The first power output terminal 3 and the second power output terminal 4 are respectively connected to both ends of the bridge arm. The G - pole control terminal 6, the E - pole signal terminal 8, and the C - pole signal terminal 9 are respectively connected to the line after the G - poles of the bridge arms are connected in parallel, the line after the E - poles are connected in parallel, and the line after the C - poles are connected in parallel. The upper - arm G - pole signal terminal 7 and the lower - arm G - pole signal terminal 10 are respectively connected to the line after the G - poles of the upper bridge arm are connected in parallel and the line after the G - poles of the lower bridge arm are connected in parallel.

[0035] The conducting strip plate includes a lower - arm copper plate 15 and an upper - arm copper plate 19. Both the lower - arm copper plate 15 and the upper - arm copper plate 19 are in a "convex" shape and are parallel and staggered in the middle of the bridge arm 2. One end of the wide end of the lower - arm copper plate 15 also extends to the upper - arm copper plate 19 and surrounds one adjacent end of the upper - arm copper plate 19. A power - terminal adapter plate 16 is also provided on the bridge arm 2. The adjacent sides of the power - terminal adapter plate 16 are adjacent and parallel to the wide end of the upper - arm copper plate 19 and the narrow end of the lower - arm copper plate 15 respectively. At both ends of the edge of the bridge arm 2, a C - pole signal bus bar 12, a G - pole signal bus bar 17, and an intermediate plate 18 are sequentially arranged from outside to inside.

[0036] Each upper bridge arm and lower bridge arm is composed of two IGBT chips 21 and FRD chips 22;

[0037] In the upper bridge arm, the C - pole of the IGBT chip 21 and the cathode of the FRD chip 22 are respectively welded on the upper - arm copper plate 19. The E - pole of the IGBT chip 21 and the anode of the FRD chip 22 are connected by a bonding wire 23. The G - pole of the IGBT chip 21 is connected to the adjacent intermediate plate 18 through a bonding wire 23. The two poles of a thermistor 20 are respectively welded on the intermediate plate 18 and the adjacent G - pole signal bus bar 17. The anode of the FRD chip 22 is connected to the wide end of the upper - arm copper plate 19 through a bonding wire 23.

[0038] In the lower arm, the C electrode of the IGBT chip 21 and the cathode of the FRD chip 22 are respectively welded to the lower arm copper plate 15. The E electrode of the IGBT chip 21 is connected to the anode of the FRD chip 22 through a bonding wire 23. The G electrode of the IGBT chip 21 is connected to the adjacent intermediate plate 18 through a bonding wire 23. The two poles of a thermistor 20 are respectively welded to the intermediate plate 18 and the adjacent G electrode signal bus bar 17. The anode of the FRD chip 22 is connected to the power terminal adapter plate 16 through a bonding wire 23. The power terminal adapter plate 16 is also connected to the C electrode signal bus bar 12 far away from it through a bonding wire 23. The wide end of the lower arm copper plate 15 is connected to the C electrode signal bus bar 12 far away from it through a bonding wire 23.

[0039] The first power output terminal 3, the second power output terminal 4 and the power input terminal 11 all have a number of contact plates 27. The number of contact plates 27 is fixed at the lower end of the IGBT chip 21 through lead-out terminals 25. The upper end of the bus bar 24 is provided with a number of lead-out terminals 25.

[0040] The lead-out terminals 25 in the first power output terminal 3 are respectively welded to the wide ends of the upper arm copper plates 19 in each arm 2.

[0041] The lead-out terminals 25 in the second power output terminal 4 are respectively welded to the upper part of the power terminal adapter plates 16 of each arm 2.

[0042] Each lead-out terminal 25 in the power input terminal 11 is welded to the wide end of the lower arm copper plate 15 in each arm 2.

[0043] The upper arm G electrode signal terminal 7 and the lower arm G electrode signal terminal 10 are respectively arranged on both sides of the arm 2 at the edge of the bottom plate 1, and are both connected to the adjacent G electrode signal bus bar 17 through a bonding wire 23.

[0044] The E electrode signal terminal 8 and the C electrode signal terminal 9 are respectively arranged on both sides of the arm 2 at the edge of the bottom plate 1, and are both connected to the adjacent C electrode signal bus bar 12 through a bonding wire 23.

[0045] The G electrode control terminal 6 is connected to the G electrode signal bus bar 17 in any one of the arms 2 through a bonding wire 23.

[0046] As Figure 1 shown, in the layout, the IGBT chips and FRD chips are staggered and distributed on each printed circuit board, so that the heat generation points of the module are dispersed and not continuous, avoiding the problem of chip heat concentration. As Figure 4 shown, ultra-long power terminals are used to directly connect from the chip surface, further reducing the width of the module.

Claims

1. An insulated gate bipolar transistor module, characterized in that, Comprising: A plurality of parallel-connected bridge arms (2), each bridge arm (2) includes a series-connected upper bridge arm and a lower bridge arm, and the upper bridge arm and the lower bridge arm in each bridge arm are connected in series; A printed circuit board (14) provided with a plurality of independent conductive plates; Power terminals, including a first power output terminal (3), a second power output terminal (4) and a power input terminal (11), Signal terminals, including a G-pole control terminal (6), an upper bridge arm G-pole signal terminal (7), an E-pole signal terminal (8), a C-pole signal terminal (9), and a lower bridge arm G-pole signal terminal (10) mounted on the edge of the bottom plate (1); A plurality of printed circuit boards (14) are mounted in parallel on the bottom plate (1), and a plurality of bridge arms are respectively and individually mounted on a printed circuit board (14). The power input terminal (11) is connected between the upper bridge arm and the lower bridge arm. The first power output terminal (3) and the second power output terminal (4) are respectively connected to both ends of the bridge arm. The G-pole control terminal (6), the E-pole signal terminal (8), and the C-pole signal terminal (9) are respectively connected to the lines after the G-poles of the bridge arms are connected in parallel, the lines after the E-poles are connected in parallel, and the lines after the C-poles are connected in parallel. The upper bridge arm G-pole signal terminal (7) and the lower bridge arm G-pole signal terminal (10) are respectively connected to the lines after the G-poles of the upper bridge arm are connected in parallel and the lines after the G-poles of the lower bridge arm are connected in parallel.

2. The insulated gate bipolar transistor module according to claim 1, characterized in that: The conductive plates include a lower bridge arm copper plate (15) and an upper bridge arm copper plate (19). The lower bridge arm copper plate (15) and the upper bridge arm copper plate (19) are both "convex" in shape and are parallel and staggered in the middle of the bridge arm (2). One end of the wide end of the lower bridge arm copper plate (15) also extends to the upper bridge arm copper plate (19) and surrounds one adjacent end of the upper bridge arm copper plate (19). A power terminal adapter plate (16) is also provided on the bridge arm (2). The adjacent sides of the power terminal adapter plate (16) are adjacent and parallel to the wide end of the upper bridge arm copper plate (19) and the narrow end of the lower bridge arm copper plate (15). At both ends of the edge of the bridge arm (2), a C-pole signal bus bar (12), a G-pole signal bus bar (17), and an intermediate plate (18) are sequentially provided from the outside to the inside.

3. The insulated gate bipolar transistor module according to claim 1, characterized in that: Each upper bridge arm and lower bridge arm are each composed of two IGBT chips (21) and FRD chips (22); In the upper bridge arm, the C-pole of the IGBT chip (21) and the cathode of the FRD chip (22) are respectively welded on the upper bridge arm copper plate (19). The E-pole of the IGBT chip (21) is connected to the anode of the FRD chip (22) through a bonding wire (23). The G-pole of the IGBT chip (21) is connected to the adjacent intermediate plate (18) through a bonding wire (23). The two poles of a thermistor (20) are respectively welded on the intermediate plate (18) and the adjacent G-pole signal bus bar (17). The anode of the FRD chip (22) is connected to the wide end of the upper bridge arm copper plate (19) through a bonding wire (23); In the lower arm, the C electrode of the IGBT chip (21) and the cathode of the FRD chip (22) are respectively welded to the lower arm copper plate (15). The E electrode of the IGBT chip (21) is connected to the anode of the FRD chip (22) through a bonding wire (23). The G electrode of the IGBT chip (21) is connected to the adjacent middle plate (18) through a bonding wire (23). The two poles of a thermistor (20) are respectively welded to the middle plate (18) and the adjacent G electrode signal bus bar (17). The anode of the FRD chip (22) is connected to the power terminal adapter plate (16) through a bonding wire (23). The power terminal adapter plate (16) is also connected to the C electrode signal bus bar (12) far away from it through a bonding wire (23). The wide end of the lower arm copper plate (15) is connected to the C electrode signal bus bar (12) far away from it through a bonding wire (23).

4. The insulated gate bipolar transistor module according to claim 3, wherein: The first power output terminal (3), the second power output terminal (4) and the power input terminal (11) all have a number of contact plates (27). The number of contact plates (27) is fixed to the lower end of the IGBT chip (21) through lead-out terminals (25). The upper end of the bus bar (24) is provided with a number of lead-out terminals (25); The lead-out terminals (25) in the first power output terminal (3) are respectively welded to the wide ends of the upper arm copper plates (19) in each arm (2); The lead-out terminals (25) in the second power output terminal (4) are respectively welded to the upper part of the power terminal adapter plate (16) in each arm (2); Each lead-out terminal (25) in the power input terminal (11) is welded to the wide end of the lower arm copper plate (15) in each arm (2).

5. The insulated gate bipolar transistor module according to claim 1, characterized in that: The upper arm G electrode signal terminal (7) and the lower arm G electrode signal terminal (10) are respectively arranged on both sides of the arm (2) at the edge of the bottom plate (1), and are both connected to the adjacent G electrode signal bus bar (17) through a bonding wire (23); The E electrode signal terminal (8) and the C electrode signal terminal (9) are respectively arranged on both sides of the arm (2) at the edge of the bottom plate (1), and are both connected to the adjacent C electrode signal bus bar (12) through a bonding wire (23); The G electrode control terminal (6) is connected to the G electrode signal bus bar (17) in any one of the arms (2) through a bonding wire (23).

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