Cross-layer interconnection structure, radio frequency assembly, antenna and communication equipment

Abstract

The utility model discloses a cross-layer interconnection structure, a radio frequency assembly, an antenna and a communication device, which are applied to the communication field, and comprise a first dielectric substrate and a second dielectric substrate, the first surface and the second surface of the first dielectric substrate are correspondingly provided with a surface microstrip line function layer and a first grounding layer, a third surface and a fourth surface of the second dielectric substrate are correspondingly provided with a strip line functional layer and a second grounding layer; the first dielectric substrate and the second dielectric substrate are stacked through a semi-cured layer, and the first grounding layer and the strip line functional layer are close to the semi-cured layer; the semi-cured layer is a semi-cured layer with a specified thickness set according to a required impedance value; micro-strip lines are arranged in the surface micro-strip line functional layer, and strip lines in conductive connection with the micro-strip lines are arranged in the strip line functional layer. According to the utility model, the space between the first grounding layer and the strip line function layer is arranged to be the semi-solidified layer with the specified thickness, so that the preparation complexity is reduced while the functionality is ensured.

Description

Technical Field

[0001] The utility model relates to the field of communications, and particularly to a cross-layer interconnection structure, a radio frequency component, an antenna and a communication device. Background Art

[0002] In the field of satellite communications, in order to avoid the mutual influence between radio frequency signals and power divider signals, the power divider needs to be arranged on the inner layer to achieve a shielding effect. However, to ensure signal transmission, it is necessary to perform cross-layer signal transmission between the power divider on the inner layer and the circuit arranged on the surface. In the existing cross-layer interconnection structure, a grounding layer needs to be arranged on both sides of the strip line forming the power divider, and a surface microstrip line for cross-layer interconnection with the strip line needs to be arranged. However, in the existing technology, each functional layer needs to be arranged on the surface of the substrate, and multiple substrates need to be arranged to ensure impedance. A semi-cured layer needs to be arranged between the multiple substrates, resulting in a complex preparation of the interconnection structure.

[0003] Therefore, how to provide a cross-layer interconnection structure with simple preparation is a technical problem that needs to be urgently solved by those skilled in the art. Summary of the Utility Model

[0004] In view of this, the purpose of the utility model is to provide a cross-layer interconnection structure, a radio frequency component, an antenna and a communication device, which solve the problem that in the existing technology, each functional layer needs to be arranged on the surface of the substrate, and a semi-cured layer needs to be arranged between multiple substrates, resulting in a complex preparation of the interconnection structure.

[0005] To solve the above technical problem, the utility model provides a cross-layer interconnection structure, including:

[0006] A first dielectric substrate and a second dielectric substrate. A surface microstrip line functional layer is arranged on the first surface of the first dielectric substrate, a first grounding layer is arranged on the second surface of the first dielectric substrate, a strip line functional layer is arranged on the third surface of the second dielectric substrate, and a second grounding layer is arranged on the fourth surface of the second dielectric substrate;

[0007] The first surface and the second surface are the two opposite surfaces of the first dielectric substrate for alignment, and the third surface and the fourth surface are the two opposite surfaces of the second dielectric substrate for alignment;

[0008] The first dielectric substrate and the second dielectric substrate are stacked through a semi-cured layer, and both the first grounding layer and the strip line functional layer are close to the semi-cured layer; the semi-cured layer is a semi-cured layer with a specified thickness set according to the required impedance value;

[0009] Microstrip traces are arranged in the surface microstrip line functional layer, and strip traces are arranged in the strip line functional layer;

[0010] A signal via is provided between the surface microstrip functional layer and the stripline functional layer, and the microstrip trace and the stripline trace are conductively connected through the conductive structure in the signal via.

[0011] Optionally, ground shielding vias are provided on both sides of the microstrip trace and the stripline trace;

[0012] The ground shielding via penetrates through the first dielectric substrate, the first ground layer, the semi-cured layer, the stripline functional layer and the second dielectric substrate.

[0013] Optionally, the signal via penetrates through the first dielectric substrate, the first ground layer, the semi-cured layer, the stripline functional layer and the second dielectric substrate.

[0014] Optionally, both the signal via and the ground shielding via are circular vias.

[0015] Optionally, chamfer structures are provided at both ends of the circular via.

[0016] Optionally, the chamfer structure is an arc chamfer structure.

[0017] Optionally, a first impedance matching structure is provided at one end of the microstrip trace close to the signal via;

[0018] A second impedance matching structure is provided at one end of the stripline trace close to the signal via;

[0019] The microstrip trace and the stripline trace achieve impedance matching through the first impedance matching structure and the second impedance matching structure.

[0020] Optionally, the first impedance matching structure and the conductive structure in the signal via are connected through a first pad;

[0021] The second impedance matching structure and the conductive structure in the signal via are connected through a second pad;

[0022] Correspondingly, the microstrip trace and the stripline trace achieve impedance matching through the first impedance matching structure, the first pad, the second pad and the second impedance matching structure.

[0023] Optionally, the thickness of the microstrip trace is greater than the thickness of the stripline trace.

[0024] The present utility model also provides a radio frequency component, including the cross-layer interconnection structure as described above.

[0025] The present utility model also provides an antenna, including the radio frequency component as described above.

[0026] The present utility model also provides a communication device, including the antenna as described above.

[0027] It can be seen that the cross-layer interconnection structure provided by the present utility model includes a first dielectric substrate and a second dielectric substrate. A surface microstrip line functional layer is provided on the first surface of the first dielectric substrate, a first grounding layer is provided on the second surface of the first dielectric substrate, a strip line functional layer is provided on the third surface of the second dielectric substrate, and a second grounding layer is provided on the fourth surface of the second dielectric substrate. The first surface and the second surface are the two opposite surfaces of the first dielectric substrate for alignment, and the third surface and the fourth surface are the two opposite surfaces of the second dielectric substrate for alignment. The first dielectric substrate and the second dielectric substrate are stacked through a semi-cured layer, and both the first grounding layer and the strip line functional layer are adjacent to the semi-cured layer. The semi-cured layer is a semi-cured layer with a specified thickness set according to the required impedance value. Microstrip traces are provided in the surface microstrip line functional layer, strip traces are provided in the strip line functional layer, signal vias are provided between the surface microstrip line functional layer and the strip line functional layer, and the microstrip traces and the strip traces are conductively connected through the conductive structure in the signal vias. By providing a semi-cured layer with a specified thickness between the provided first grounding layer and the provided strip line functional layer, the present utility model achieves the effect of isolating the first grounding layer and the strip line functional layer while ensuring impedance, reducing the complexity and process difficulty of preparation.

[0028] In addition, the present utility model also provides a radio frequency component, an antenna and a communication device, which also have the above beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present utility model. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0030] Figure 1 It is a schematic structural diagram of a cross-layer interconnection structure provided by an embodiment of the present utility model;

[0031] Figure 2 It is a schematic structural diagram of an existing cross-layer interconnection structure;

[0032] Figure 3 It is a schematic structural diagram of another cross-layer interconnection structure provided by an embodiment of the present utility model;

[0033] Figure 4 It is a schematic structural diagram of still another cross-layer interconnection structure provided by an embodiment of the present utility model;

[0034] Figure 5Schematic diagram of the structure of a circular through-hole in a cross-layer interconnection structure provided by an embodiment of the present invention;

[0035] Figure 6 Example diagram of the simulation result of the return loss of a cross-layer interconnection structure provided by an embodiment of the present invention;

[0036] Figure 7 Example diagram of the simulation result of the insertion loss of a cross-layer interconnection structure provided by an embodiment of the present invention;

[0037] Figure 8 Comprehensive example diagram of the return loss and insertion loss of a cross-layer interconnection structure provided by an embodiment of the present invention;

[0038] Figures 1 to 5 In the figure, the reference numerals are explained as follows:

[0039] 1 - dielectric layer, 2 - signal layer, 3 - ground layer, 4 - prepreg layer;

[0040] 10 - first dielectric substrate, 11 - surface microstrip line functional layer, 12 - first ground layer;

[0041] 20 - second dielectric substrate, 21 - stripline functional layer, 22 - second ground layer;

[0042] 30 - prepreg layer, 40 - signal through-hole, 50 - ground shielding through-hole, 60 - circular through-hole, 70 - arc chamfer structure. Specific embodiments

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0044] Embodiment 1:

[0045] Please refer to Figure 1 , Figure 1 which is a schematic diagram of a cross-layer interconnection structure provided by an embodiment of the present invention. The cross-layer interconnection structure may include:

[0046] The first dielectric substrate 10 and the second dielectric substrate 20. A surface microstrip line functional layer 11 is provided on the first surface of the first dielectric substrate 10, a first ground layer 12 is provided on the second surface of the first dielectric substrate 10, a strip line functional layer 21 is provided on the third surface of the second dielectric substrate 20, and a second ground layer 22 is provided on the fourth surface of the second dielectric substrate 20;

[0047] The first surface and the second surface are the two opposite surfaces of the first dielectric substrate 10 for alignment, and the third surface and the fourth surface are the two opposite surfaces of the second dielectric substrate 20 for alignment;

[0048] The first dielectric substrate 10 and the second dielectric substrate 20 are stacked through a semi-cured layer 30, and both the first ground layer 12 and the strip line functional layer 21 are adjacent to the semi-cured layer 30; the semi-cured layer 30 is a semi-cured layer 30 with a specified thickness set according to the required impedance value;

[0049] Microstrip traces are provided in the surface microstrip line functional layer 11, and strip traces are provided in the strip line functional layer 21;

[0050] A signal via hole 40 is provided between the surface microstrip line functional layer 11 and the strip line functional layer 21, and the microstrip traces and the strip traces are conductively connected through the conductive structure in the signal via hole 40.

[0051] It should be noted that the existing cross-layer interconnection structure can be referred to Figure 2 , Figure 2It is a schematic structural diagram of an existing cross-layer interconnection structure. In this embodiment, compared with the conventional cross-layer interconnection structure, in the structure with two signal layers 2 and two ground layers 3, a dielectric layer 1 needs to be provided between every two conductive functional layers. The above conductive functional layers include signal layer 2 and ground layer 3. In the prior art, the dielectric layer 1 between adjacent conductive functional layers is set as a dielectric substrate. However, to ensure the connection stability between adjacent dielectric substrates, a prepreg layer 4 needs to be provided between two adjacent dielectric substrates. And for the cross-layer interconnection structure prepared based on the above structure, the overall structure preparation is complex. In this application, based on the structure of the cross-layer interconnection structure in the prior art, which includes four conductive functional layers and three dielectric substrates, and a prepreg layer 4 is provided between every two dielectric substrates, the middle dielectric substrate among the three dielectric substrates is removed, and only two dielectric substrates are retained, that is, the above first dielectric substrate 10 and second dielectric substrate 20. And the four conductive functional layers are correspondingly arranged, that is, the above surface microstrip line functional layer 11 and the first ground layer 12 are correspondingly arranged on both sides of the first dielectric substrate 10 in alignment, and the above stripline functional layer 21 and the second ground layer 22 are correspondingly arranged on both sides of the second dielectric substrate 20 in alignment. And the first dielectric substrate 10 and the second dielectric substrate 20 are stacked, and they are connected by the above prepreg layer 30. Further, it should be noted that the prepreg layer 30 provided between the first dielectric substrate 10 and the second dielectric substrate 20 in this embodiment is different from the conventional prepreg layer, and can be thickened with reference to the isolation effect or thickness of the dielectric substrate, so that the thickened prepreg layer can achieve the effect of replacing the middle dielectric substrate. The specific thickening size is not limited in this embodiment and can be set according to the actual operating conditions of the cross-layer interconnection structure. This embodiment can be specifically applied to the field of power dividers, that is, the strip line can be specifically set as a power divider.

[0052] In a possible example of the cross-layer interconnection structure in this embodiment, it may include a surface microstrip line functional layer 11, a first dielectric substrate 10, a first ground layer 12, a thickened prepreg layer 30, a stripline functional layer 21, a second dielectric substrate 20, and a second ground layer 22 that are stacked in sequence. Compared with the conventional structure that requires three dielectric substrates based on four conductive functional layers, this cross-layer interconnection structure can also ensure that the functionality of the structure is not affected. However, by only providing a prepreg layer 30 between the first dielectric substrate 10 and the second dielectric substrate 20, the prepreg layer 30 is a prepreg layer 30 with a specified thickness set according to the required impedance value. Setting the prepreg layer 30 with a specified thickness can achieve the effect of isolating the first ground layer and the stripline functional layer while ensuring the impedance, and there is no need to set a multi-layer stacked structure, reducing the complexity of preparation. In addition, it should be noted that the thicknesses of the surface microstrip line functional layer 11, the first ground layer 12, the stripline functional layer 21, and the second ground layer 22 in this embodiment can be set according to the actual situation.

[0053] Further, in order to ensure that signals are reflected during transmission and improve power transmission efficiency, reference can be made to Figure 3 , Figure 3 which is a schematic structural diagram of another cross-layer interconnection structure provided by an embodiment of the present invention. It can be set that a first impedance matching structure is provided at one end of the above-mentioned microstrip trace close to the signal through-hole 40;

[0054] A second impedance matching structure is provided at one end of the strip trace close to the signal through-hole 40;

[0055] The microstrip trace and the strip trace achieve impedance matching through the first impedance matching structure and the second impedance matching structure.

[0056] It should be noted that in this embodiment Figure 3 the corresponding strip line functional layer 21 marked, and the signal through-hole 40 should both be located inside the cross-layer interconnection structure and cannot be actually observed from the outside. However, for ease of understanding, this part is drawn. In this embodiment, a first impedance matching structure is provided at one end of the microstrip trace close to the signal through-hole 40, and a second impedance matching structure is provided at one end of the strip trace close to the signal through-hole 40, so as to achieve impedance matching between the signal sending end and the signal receiving end through the first impedance matching structure and the second impedance matching structure, and it is possible to avoid power loss and reduce the transmission efficiency caused by signal reflection when signals are transmitted between the signal sending end and the signal receiving end.

[0057] Further, in order to ensure the stability of the connection between circuit structures and improve the stability of signal transmission at the same time, it can be set that the above-mentioned first impedance matching structure is connected to the conductive structure in the signal through-hole through a first pad;

[0058] The second impedance matching structure is connected to the conductive structure in the signal through-hole through a second pad;

[0059] Correspondingly, the microstrip trace and the strip trace achieve impedance matching through the first impedance matching structure, the first pad, the second pad, and the second impedance matching structure.

[0060] It should be noted that in this embodiment, using pads to connect the impedance matching structure to the conductive structure in the signal through-hole 40 can enhance the reliability of the structure connection, and at the same time can reduce the impedance change of the signal during transmission, thereby reducing signal reflection, reducing impedance jump, and improving transmission efficiency. In addition, it should be noted that the size of the pads in this embodiment can be set corresponding to the impedance of the conductive structure to ensure the smoothness of signal transmission.

[0061] Further, in order to ensure the operation stability of the component, the thickness of the above-mentioned microstrip trace can be set to be greater than the thickness of the strip trace.

[0062] It should be noted that in this embodiment, the microstrip traces and the strip traces are generally made of metal materials, such as common copper metal traces. At the same time, the copper metal traces have good heat dissipation effects. Therefore, to ensure the heat dissipation effect of the component, the thickness of the microstrip traces arranged on the outside can be increased to improve the heat dissipation effect. However, at the same time, to ensure the structural stability of the strip traces between the two dielectric substrates and avoid heat accumulation between the two dielectric substrates, the increase in the thickness of the strip traces is limited. Therefore, in this embodiment, the thickness of the microstrip traces on the outside is set to be greater than the thickness of the strip traces, which can improve the heat dissipation effect of the through-layer interconnection structure while ensuring the structural stability. In this embodiment, specifically, the microstrip traces, the strip traces, the first ground layer 12, and the second ground layer 22 can all be set as copper layer traces. The copper thickness in the microstrip traces can be set to 0.035 mm, and the copper thickness of other layers can be set to 0.017 mm.

[0063] The through-layer interconnection structure provided by the embodiment of the present invention is applied, including a first dielectric substrate 10 and a second dielectric substrate 20. A surface microstrip line functional layer 11 is provided on the first surface of the first dielectric substrate 10, a first ground layer 12 is provided on the second surface of the first dielectric substrate 10, a strip line functional layer 21 is provided on the third surface of the second dielectric substrate 20, and a second ground layer 22 is provided on the fourth surface of the second dielectric substrate 20. The first surface and the second surface are the two opposite surfaces of the first dielectric substrate 10, and the third surface and the fourth surface are the two opposite surfaces of the second dielectric substrate 20. The first dielectric substrate 10 and the second dielectric substrate 20 are stacked through a semi-cured layer 30, and both the first ground layer 12 and the strip line functional layer 21 face the semi-cured layer 30. Microstrip traces are provided in the surface microstrip line functional layer 11, strip traces are provided in the strip line functional layer 21, and signal vias 40 are provided between the surface microstrip line functional layer 11 and the strip line functional layer 21. The microstrip traces and the strip traces are conductively connected through the conductive structure in the signal vias 40. By setting the entire space between the first ground layer 12 and the strip line functional layer 21 to use the semi-cured layer 30 instead of the intermediate dielectric substrate, the present invention can reduce the preparation complexity and process difficulty.

[0064] In addition, in the embodiment of the present utility model, through the first impedance matching structure and the second impedance matching structure, impedance matching between the signal transmitting end and the signal receiving end is achieved, which can avoid the problem of power loss caused by signal reflection and reduced transmission efficiency during signal transmission between the signal transmitting end and the signal receiving end; connecting the impedance matching structure to the conductive structure in the signal via 40 using a pad can enhance the reliability of the structural connection, and at the same time can reduce the impedance change of the signal during transmission, thereby reducing signal reflection and impedance jump, and improving transmission efficiency; setting the thickness of the outer microstrip line to be greater than the thickness of the strip line can improve the heat dissipation effect of the cross-layer interconnection structure while ensuring structural stability.

[0065] Embodiment 2:

[0066] Please refer to Figure 4 , Figure 4 which is a schematic structural diagram of another cross-layer interconnection structure provided by the embodiment of the present utility model. The difference compared with the above Embodiment 1 is that:

[0067] Ground shielding vias 50 are provided on both sides of the microstrip line and the strip line;

[0068] The ground shielding vias 50 penetrate through the first dielectric substrate 10, the first ground layer 12, the semi-cured layer 30, the strip line functional layer 21, and the second dielectric substrate 20.

[0069] It should be noted that in this embodiment, by providing the ground shielding vias 50 between the microstrip line and the strip line, signal interference during cross-layer transmission can be avoided, and the stability and accuracy of signal transmission can be improved. The diameter of the shielding vias 50 in this embodiment can be set according to the diameter of the inner conductor structure.

[0070] Furthermore, in order to further improve the convenience of fabricating the cross-layer interconnection structure, the above signal via 40 can be provided to penetrate through the first dielectric substrate 10, the first ground layer 12, the semi-cured layer 30, the strip line functional layer 21, and the second dielectric substrate 20.

[0071] In this embodiment, by setting the signal via 40 to penetrate through the first dielectric substrate 10, the first ground layer 12, the semi-cured layer 30, the strip line functional layer 21, and the second dielectric substrate 20, it can be adapted to the provided ground shielding vias 50 and can be fabricated simultaneously, improving the convenience of fabrication.

[0072] Furthermore, in order to ensure the stability of the via structure and avoid stress accumulation, reference can be made to Figure 5 , Figure 5 which is a schematic structural diagram of a circular via in a cross-layer interconnection structure provided by the embodiment of the present utility model. The above signal via 40 and ground shielding vias 50 can both be provided as circular vias 60.

[0073] It should be noted that in this embodiment, the through-hole is set as a circular through-hole 60, that is, the cross-section of the through-hole is set as a circular shape, which can avoid the problem of stress accumulation at the corners when the through-hole is filled with a conductive structure, and improve the stability of the through-hole structure.

[0074] Furthermore, in order to further avoid stress accumulation at the corners at both ends of the through-hole, and at the same time to avoid burrs and other structural damages at the corners at both ends of the through-hole from damaging the microstrip line or the strip line, chamfer structures can be provided at the corners at both ends of the above-mentioned circular through-hole 60.

[0075] In this embodiment, chamfer structures are provided at the corners at both ends of the circular through-hole 60, which can avoid burrs at the corners from damaging the microstrip line or the strip line, and improve the structural stability.

[0076] Furthermore, in order to further avoid damage to other adjacent structures at the corners at both ends of the signal through-hole 40 and the ground shielding through-hole 50, the above-mentioned chamfer structure can be set as an arc chamfer structure 70.

[0077] It should be noted that in this embodiment, by setting the chamfer structure as the arc chamfer structure 70, the corners at both ends can be completely eliminated, and at the same time, the problem of stress accumulation easily caused by the corners at both ends of the through-hole can be eliminated, and the structural strength of the cross-layer interconnection structure is improved.

[0078] Applying the cross-layer interconnection structure provided by the embodiment of the present invention, by providing a ground shielding through-hole 50 between the microstrip line and the strip line, interference during cross-layer signal transmission can be avoided, and the stability and accuracy of signal transmission are improved. In addition, in the embodiment of the present invention, by setting the signal through-hole 40 to penetrate through the first dielectric substrate 10, the first ground layer 12, the semi-cured layer 30, the strip line functional layer 21 and the second dielectric substrate 20, it can be adapted to the provided ground shielding through-hole 50 and can be prepared simultaneously, improving the convenience of preparation; setting the through-hole as a circular through-hole 60 can avoid the problem of stress accumulation at the corners when the through-hole is filled with a conductive structure, and improve the stability of the through-hole structure; by providing chamfer structures at the corners at both ends of the circular through-hole 60, burrs at the corners can be avoided from damaging the microstrip line or the strip line, and the structural stability is improved; by setting the chamfer structure as the arc chamfer structure 70, the corners at both ends can be completely eliminated, and at the same time, the problem of stress accumulation easily caused by the corners at both ends of the through-hole can be eliminated, and the structural strength of the cross-layer interconnection structure is improved.

[0079] In an embodiment of a specific application scenario, the above-mentioned cross-layer interconnection structure may specifically include the following structures:

[0080] A first dielectric substrate and a second dielectric substrate. A surface microstrip line functional layer is disposed on a first surface of the first dielectric substrate, and a first grounding layer is disposed on a second surface of the first dielectric substrate. A strip line functional layer is disposed on a third surface of the second dielectric substrate, and a second grounding layer is disposed on a fourth surface of the second dielectric substrate;

[0081] The first surface and the second surface are two opposite surfaces of the first dielectric substrate for alignment, and the third surface and the fourth surface are two opposite surfaces of the second dielectric substrate for alignment;

[0082] The first dielectric substrate and the second dielectric substrate are stacked through a semi-cured layer, and both the first grounding layer and the strip line functional layer are adjacent to the semi-cured layer; the semi-cured layer is a semi-cured layer with a specified thickness set according to the required impedance value;

[0083] Microstrip traces are provided in the surface microstrip line functional layer, and strip traces are provided in the strip line functional layer;

[0084] A signal through-hole is provided between the surface microstrip line functional layer and the strip line functional layer, and the microstrip traces and the strip traces are conductively connected through a conductive structure in the signal through-hole;

[0085] Ground shielding through-holes are provided on both sides of the microstrip traces and the strip traces; the ground shielding through-holes and the signal through-holes penetrate through the first dielectric substrate, the first grounding layer, the semi-cured layer, the strip line functional layer, and the second dielectric substrate; both the signal through-holes and the ground shielding through-holes are circular through-holes; arc chamfer structures are provided at both ends of the circular through-holes;

[0086] A first impedance matching structure is provided at one end of the microstrip trace close to the signal through-hole; a second impedance matching structure is provided at one end of the strip trace close to the signal through-hole; the microstrip trace and the strip trace achieve impedance matching through the first impedance matching structure and the second impedance matching structure;

[0087] The first impedance matching structure and the conductive structure in the signal through-hole are connected through a first pad; the second impedance matching structure and the conductive structure in the signal through-hole are connected through a second pad; correspondingly, the microstrip trace and the strip trace achieve impedance matching through the first impedance matching structure, the first pad, the second pad, and the second impedance matching structure;

[0088] The thickness of the microstrip trace is greater than the thickness of the strip trace.

[0089] Further, in this embodiment, through the simulation of the transition structure, the final simulation results as shown in Figures 6 to 8 are obtained. Figure 6 This is an example diagram of the simulation result of the return loss of a cross-layer interconnection structure provided by an embodiment of the present invention. Figure 7 This is an example diagram of the simulation result of the insertion loss of a cross-layer interconnection structure provided by an embodiment of the present invention.Figure 8 A comprehensive example diagram of return loss and insertion loss of a cross-layer interconnect structure provided by an embodiment of the utility model. Figures 6 to 7 The vertical axis is used to represent the loss in decibels (dB), and Figure 6 and Figure 8 The curve dB (S (1, 1)) in the middle curve information indicates the change value of input return loss with frequency, and the curve dB (S (2, 2)) indicates the change value of output return loss with frequency. Figure 7 and Figure 8 In the curve information, curve dB(S(2,1)) and curve dB(S(1,2)) both indicate the variation of insertion loss with frequency.

[0090] By the attached Figure 6 To Attachment Figure 8 It can be seen that the simulation result of the return loss of the above-mentioned cross-layer interconnection structure in this embodiment is that the return loss is better than 10dB within 10GHz~40GHz; the simulation result of the insertion loss of the above-mentioned cross-layer interconnection structure is that the insertion loss is better than 0.55dB within 10GHz~40GHz.

[0091] The radio frequency component provided in the embodiment of the utility model is introduced below. The radio frequency component described below and the cross-layer interconnection structure described above can be referred to each other.

[0092] The radio frequency component provided by the embodiment of the utility model includes the cross-layer interconnection structure as described above.

[0093] The cross-layer interconnection structure in the radio frequency component provided in this embodiment can be set as a signal receiving structure or a signal sending structure, or can also be set as a transceiver structure that has both signal receiving and signal sending.

[0094] An antenna provided in an embodiment of the present utility model is introduced below. The antenna described below and the radio frequency component described above can refer to each other.

[0095] The antenna provided by the embodiment of the present invention may include the radio frequency component as described above.

[0096] The number and positions of the RF components in the antenna provided in this embodiment can be set according to actual working conditions.

[0097] A communication device provided in an embodiment of the present utility model is introduced below. The communication device described below and the antenna described above can refer to each other.

[0098] The communication device provided by the embodiment of the present utility model may include the antenna as described above.

[0099] The number and positions of antennas in the communication device provided in this embodiment can be set according to actual working conditions.

[0100] In this specification, the various embodiments are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other.

[0101] In addition, it should be noted that in this text, relationships such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant is intended to cover non-exclusive inclusion.

[0102] The above has introduced in detail a cross-layer interconnection structure, a radio frequency component, an antenna and a communication device provided by the present utility model. Specific examples are used in this text to elaborate on the principle and implementation manner of the present utility model. The description of the above embodiments is only used to help understand the structure and its core idea of the present utility model; at the same time, for those of ordinary skill in the art, according to the idea of the present utility model, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present utility model.

Claims

1. A cross-layer interconnection structure, characterized in that, Comprising: A first dielectric substrate (10) and a second dielectric substrate (20), a surface microstrip line functional layer (11) is provided on a first surface of the first dielectric substrate (10), a first ground layer (12) is provided on a second surface of the first dielectric substrate (10), a strip line functional layer (21) is provided on a third surface of the second dielectric substrate (20), and a second ground layer (22) is provided on a fourth surface of the second dielectric substrate (20); The first surface and the second surface are two opposite surfaces of the first dielectric substrate (10) for alignment, and the third surface and the fourth surface are two opposite surfaces of the second dielectric substrate (20) for alignment; The first dielectric substrate (10) and the second dielectric substrate (20) are stacked through a semi-cured layer (30), and both the first ground layer (12) and the strip line functional layer (21) face the semi-cured layer (30); the semi-cured layer (30) is a semi-cured layer (30) with a specified thickness set according to the required impedance value; Microstrip traces are provided in the surface microstrip line functional layer (11), and strip traces are provided in the strip line functional layer (21); A signal via hole (40) is provided between the surface microstrip line functional layer (11) and the strip line functional layer (21), and the microstrip traces and the strip traces are conductively connected through a conductive structure in the signal via hole (40).

2. The cross-layer interconnection structure according to claim 1, wherein Ground shielding via holes (50) are provided on both sides of the microstrip traces and the strip traces; The ground shielding via holes (50) penetrate through the first dielectric substrate (10), the first ground layer (12), the semi-cured layer (30), the strip line functional layer (21) and the second dielectric substrate (20).

3. The cross-layer interconnection structure according to claim 2, wherein The signal via hole (40) penetrates through the first dielectric substrate (10), the first ground layer (12), the semi-cured layer (30), the strip line functional layer (21) and the second dielectric substrate (20).

4. The cross-layer interconnection structure according to claim 3, wherein, Both the signal via hole (40) and the ground shielding via holes (50) are circular via holes (60).

5. The cross-layer interconnection structure according to claim 4, wherein, Chamfer structures are provided at both ends and corners of the circular via holes (60).

6. The cross-layer interconnection structure according to claim 1, wherein, A first impedance matching structure is provided at one end of the microstrip trace close to the signal via hole; A second impedance matching structure is provided at one end of the strip trace close to the signal via hole (40); The microstrip traces and the strip traces achieve impedance matching through the first impedance matching structure and the second impedance matching structure; and / or, The thickness of the microstrip traces is greater than the thickness of the strip traces.

7. The cross-layer interconnection structure according to claim 6, characterized in that, The first impedance matching structure and the conductive structure in the signal via hole (40) are connected through a first pad; The second impedance matching structure and the conductive structure in the signal via hole (40) are connected through a second pad; Correspondingly, the microstrip traces and the strip traces achieve impedance matching through the first impedance matching structure, the first pad, the second pad and the second impedance matching structure.

8. A radio frequency component, characterized in that, Comprising the interlayer interconnection structure according to any one of claims 1 to 7.

9. An antenna, characterized in that, Comprising the RF component as described in claim 8.

10. A communication device, characterized in that, Comprising the antenna as described in claim 9.

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