High-integration power amplifier

Abstract

The utility model provides a high-integration power amplifier, and belongs to the technical field of power amplifiers. The high-integration power amplifier comprises a driving module, an input matching module, a bias module, a power tube and an output matching module, the first end of the driving module serves as a signal receiving end, the second end of the driving module is connected with the first end of the input matching module, the second end of the input matching module is connected with the input end of the power tube, and the output end of the power tube is connected with a load through the output matching module; the input end of the power tube is connected with the bias module. The problem that an existing power amplifier is poor in communication quality can be solved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of power amplifiers, and particularly to a highly integrated power amplifier. Background Art

[0002] In the field of wireless communication, with the rapid development of mobile communication technology, the requirements for signal transmission power, efficiency, and quality are increasing day by day. Traditional power amplifiers often have problems such as insufficient signal amplification ability, large transmission loss, and low efficiency when facing long-distance and high-rate communication requirements. Especially in wireless communication base stations, how to effectively enhance the transmission power of signals, reduce signal attenuation, and ensure the stable transmission of signals has become a technical problem to be solved urgently.

[0003] Existing power amplifier design schemes are mostly decentralized module combinations, and the matching and cooperation efficiency between modules is not high, resulting in limited overall performance. At the same time, some amplifiers ignore the balance between efficiency and linearity while pursuing high-power output, which exacerbates signal distortion and affects communication quality. Summary of the Utility Model

[0004] Embodiments of the present disclosure provide a highly integrated power amplifier to solve the problem of poor communication quality of existing power amplifiers.

[0005] Embodiments of the present disclosure provide a highly integrated power amplifier, including: a driving module, an input matching module, a bias module, a power transistor, and an output matching module;

[0006] The first end of the driving module serves as a signal receiving end, the second end of the driving module is connected to the first end of the input matching module, the second end of the input matching module is connected to the input end of the power transistor, and the output end of the power transistor is connected to a load through the output matching module;

[0007] The input end of the power transistor is connected to the bias module.

[0008] In an exemplary embodiment of the present disclosure, it further includes: a temperature detection module, an alarm module, and a microprocessing module;

[0009] The temperature detection module is used to detect the operating temperature of the power transistor, and the temperature detection module is connected to the microprocessing module;

[0010] The alarm module is connected to the microprocessing module.

[0011] In an exemplary embodiment of the present disclosure, the driving module includes: inductor L8, driver U1, capacitor C14, resistor R3, capacitor C12, resistor R4, capacitor C15, capacitor C13, and capacitor C11;

[0012] The first input terminal of the driver U1 serves as a signal receiving terminal. The first input terminal of the driver U1 is grounded through the inductor L8. The second input terminal of the driver U1 is grounded. The power supply terminal of the driver U1 is used to connect to the VDD power supply, and the ground terminal of the driver U1 is grounded;

[0013] The first output terminal of the driver U1 is grounded through the capacitor C14. The first output terminal of the driver U1 is connected to the first end of the resistor R3. The second end of the resistor R3 is grounded through the capacitor C12, and the second end of the resistor R3 is connected to the first end of the capacitor C11;

[0014] The second output terminal of the driver U1 is grounded through the capacitor C15. The second output terminal of the driver U1 is connected to the first end of the resistor R4. The second end of the resistor R4 is grounded through the capacitor C13, and the second end of the resistor R4 is connected to the first end of the capacitor C11;

[0015] The second end of the capacitor C11 is connected to the first end of the input matching module.

[0016] In an exemplary embodiment of the present disclosure, the input matching module includes: a capacitor C3 and an inductor L1;

[0017] The first end of the capacitor C3 is connected to the second end of the drive module, and the second end of the capacitor C3 is grounded;

[0018] The first end of the inductor L1 is connected to the second end of the drive module, and the second end of the inductor L1 is connected to the input terminal of the power transistor.

[0019] In an exemplary embodiment of the present disclosure, the power transistor includes: a switching transistor Q1;

[0020] The control terminal of the switching transistor Q1 serves as the input terminal of the power transistor. The control terminal of the switching transistor Q1 is used to connect to the Vgs power supply. The first end of the switching transistor Q1 is used to connect to the Vds power supply. The first end of the switching transistor Q1 is connected to the output matching module, and the second end of the switching transistor Q1 is grounded.

[0021] In an exemplary embodiment of the present disclosure, the bias module includes: a capacitor C1, a resistor R1, a resistor R2, and a capacitor C2;

[0022] The first end of the capacitor C1 is connected to the control terminal of the switching transistor Q1, and the second end of the capacitor C1 is connected to the first end of the switching transistor Q1 through the resistor R1;

[0023] The first end of the resistor R2 is connected to the control terminal of the switching transistor Q1, and the second end of the resistor R2 is grounded through the capacitor C2.

[0024] In an exemplary embodiment of the present disclosure, the output matching module includes inductor L4, inductor L5, capacitor C6, capacitor C7, capacitor C8, capacitor C9, inductor L6, capacitor C10 and inductor L7;

[0025] The first end of the inductor L4 is connected to the first end of the switching transistor Q1, the second end of the inductor L4 is grounded through the capacitor C6, the first end of the inductor L5 is connected to the first end of the switching transistor Q1, and the second end of the inductor L5 is grounded through the capacitor C7;

[0026] The first end of the capacitor C8 is connected to the first end of the switching transistor Q1, the second end of the capacitor C8 is connected to the first end of the capacitor C9, the second end of the capacitor C9 is for connecting a load, the second end of the capacitor C9 is connected to the first end of the capacitor C10, the second end of the capacitor C10 is grounded through the inductor L7, and the inductor L6 is connected in parallel with the capacitor C9.

[0027] The beneficial effects of a high-integration power amplifier provided by the embodiments of the present disclosure are as follows:

[0028] First of all, the drive module effectively improves the initial power of the signal, laying a solid foundation for subsequent amplification; the input matching module ensures the minimum reflection and loss of the signal before it is transmitted to the power transistor, guaranteeing the signal quality; the bias module provides an accurate operating point for the power transistor, optimizing the amplification efficiency and linearity; finally, the output matching module ensures that the amplified signal can be seamlessly connected to the load, reducing the transmission loss. The embodiments of the present disclosure not only improve the transmission distance and quality of the signal, but also enhance the coverage range and data transmission ability of the wireless communication base station, providing users with a more stable, fast and high-quality communication experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0030] Figure 1 is a structural block diagram of a high-integration power amplifier provided by an embodiment of the present disclosure;

[0031] Figure 2 is a structural block diagram of a high-integration power amplifier provided by another embodiment of the present disclosure;

[0032] Figure 3 is a circuit diagram of a high-integration power amplifier provided by an embodiment of the present disclosure. Detailed implementation manners

[0033] In order to enable those skilled in the art to better understand this solution, the following will clearly describe the technical solutions in the embodiments of this solution with reference to the accompanying drawings in the embodiments of this solution. Obviously, the described embodiments are part of the embodiments of this solution, rather than all of the embodiments. Based on the embodiments in this solution, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of this solution.

[0034] The term "including" in the specification, claims and above-mentioned accompanying drawings of this solution, as well as any other variations, means "including but not limited to", and is intended to cover non-exclusive inclusion, not limited to the examples listed in the text. In addition, terms such as "first" and "second" are used to distinguish different objects, rather than to describe a specific order.

[0035] The following will describe the implementation of the present disclosure in detail with reference to specific accompanying drawings:

[0036] Figure 1 The structural schematic diagram of a high-integration power amplifier provided for the embodiments of the present disclosure. Refer to Figure 1 , this high-integration power amplifier includes: a drive module, an input matching module, a bias module, a power transistor, and an output matching module; the first end of the drive module serves as a signal receiving end, the second end of the drive module is connected to the first end of the input matching module, the second end of the input matching module is connected to the input end of the power transistor, the output end of the power transistor is connected to a load through the output matching module; the input end of the power transistor is connected to the bias module.

[0037] In this embodiment, the first end of the driving module serves as a signal receiving end to receive the electrical signal input externally. The function of the driving module is to preliminarily amplify and process the input weak signal, enhance its power and driving ability, and prepare for the subsequent amplification stage. The signal processed by the driving module is transmitted to the input matching module. The main function of the input matching module is to achieve impedance matching at the input port of the amplifier, so as to minimize signal reflection and power loss, and ensure that the input signal can be efficiently transmitted to the input end of the power transistor. For example, by adjusting the parameters of components such as inductors and capacitors in the circuit, the input impedance is matched with the output impedance of the signal source. The signal enters the input end of the power transistor from the input matching module. The power transistor is the core component of the entire amplifier and is responsible for amplifying the signal by a large margin. The performance of the power transistor directly determines the output power and efficiency of the amplifier. The input end of the power transistor is connected to the bias module, and the bias module provides a suitable quiescent operating point for the power transistor to ensure that the power transistor can operate normally in the required operating region when amplifying the signal, and avoid adverse phenomena such as distortion. The signal after power amplification is transmitted from the output end of the power transistor to the output matching module. The output matching module is also used to achieve impedance matching at the output port of the amplifier, so that the output signal can be effectively transmitted to the load, reducing reflection and loss. Finally, the signal after matching drives the load to work.

[0038] Exemplarily, in a wireless communication base station, a highly integrated power amplifier is used to enhance the transmission power of the signal. The driving module can adopt a high-performance radio frequency amplifier chip, which can receive the weak radio frequency signal from the baseband processing unit and boost its gain to a certain level. The input matching module can be composed of microstrip lines. By precisely designing and debugging the parameters of these components, the input impedance is made to match well with the output impedance of the driving module and the input impedance of the power transistor within the operating frequency band. For example, in the 2.4 GHz frequency band, by adjusting the length and width of the microstrip line, as well as the values of capacitors and inductors, impedance matching is achieved to reduce reflection loss. The bias module consists of a stable power supply circuit and a resistor network, providing a stable DC bias voltage and current for the power transistor. To ensure that the power transistor operates in the AB class state, which can guarantee a certain efficiency and effectively reduce signal distortion. The power transistor is selected as an advanced GaN (gallium nitride) power transistor, which has the characteristics of high power density and high efficiency. At a working frequency of 2.4 GHz, it can provide an output power of dozens of watts. The output matching module can also be based on a combination of microstrip lines to transform the output impedance of the power transistor into 50 ohms to match the antenna load at the backend.

[0039] During actual operation, when the base station receives an uplink signal from a mobile device, this embodiment can quickly amplify the weak signal and then transmit it through the antenna, thus achieving long-distance and high-quality communication. At the same time, in downlink transmission, this embodiment can also effectively amplify the signal generated by the base station to cover a wider area and provide users with stable and fast data transmission services.

[0040] It can be concluded from the above that, first of all, the drive module effectively improves the initial power of the signal, laying a solid foundation for subsequent amplification; the input matching module ensures the minimum reflection and loss of the signal before it is transmitted to the power transistor, guaranteeing the signal quality; the bias module provides an accurate operating point for the power transistor, optimizing the amplification efficiency and linearity; finally, the output matching module ensures that the amplified signal can seamlessly connect to the load, reducing the transmission loss. This embodiment not only improves the transmission distance and quality of the signal, but also enhances the coverage area and data transmission ability of the wireless communication base station, providing users with a more stable, fast, and high-quality communication experience.

[0041] As Figure 2 shown, in an embodiment of this public opening, it further includes: a temperature detection module, an alarm module, and a microprocessing module; the temperature detection module is used to detect the operating temperature of the power transistor, and the temperature detection module is connected to the microprocessing module; the alarm module is connected to the microprocessing module.

[0042] In this embodiment, the main function of the temperature detection module is to monitor the operating temperature of the power transistor in real time. Since a large amount of heat is generated during the power amplification process of the power transistor, if the temperature is too high, it may affect its performance, stability, and even cause damage. The temperature detection module usually uses temperature sensors such as thermistors, thermocouples, or integrated temperature sensors. These sensors can convert the temperature of the power transistor into an electrical signal and transmit it to the microprocessing module.

[0043] The microprocessing module, as the control and processing core of the entire system, receives the temperature information from the temperature detection module. It will process and analyze this information, convert the received temperature electrical signal into an actual temperature value, and compare and judge it with a preset safe temperature threshold.

[0044] When the microprocessing module determines that the operating temperature of the power transistor exceeds the preset safe threshold, it will send a control signal to the alarm module. After receiving the signal, the alarm module will activate the corresponding alarm mechanism, such as emitting an audible and visual alarm, sending an alarm message to the monitoring system, etc., to remind the operator that the power transistor is in an overheated state and corresponding measures need to be taken, such as reducing the input power, enhancing heat dissipation, etc., so as to avoid damage to the power transistor due to overheating and ensure the normal operation of the entire power amplifier.

[0045] It can be concluded from the above that by real-time monitoring of the operating temperature of the power tube, the microprocessing module can quickly judge and respond to abnormal situations. Once the temperature exceeds the safe range, the alarm module can be triggered to notify the maintenance personnel in a timely manner, effectively preventing performance degradation or equipment damage caused by overheating, and ensuring the stable operation of the communication system.

[0046] As Figure 3 shown, in an embodiment of the present disclosure, the driving module includes: inductor L8, driver U1, capacitor C14, resistor R3, capacitor C12, resistor R4, capacitor C15, capacitor C13, and capacitor C11; the first input terminal of driver U1 serves as a signal receiving terminal, the first input terminal of driver U1 is grounded through inductor L8, the second input terminal of driver U1 is grounded, the power supply terminal of driver U1 is used to connect to the VDD power supply, and the ground terminal of driver U1 is grounded; the first output terminal of driver U1 is grounded through capacitor C14, the first output terminal of driver U1 is connected to the first end of resistor R3, the second end of resistor R3 is grounded through capacitor C12, and the second end of resistor R3 is connected to the first end of capacitor C11; the second output terminal of driver U1 is grounded through capacitor C15, the second output terminal of driver U1 is connected to the first end of resistor R4, the second end of resistor R4 is grounded through capacitor C13, and the second end of resistor R4 is connected to the first end of capacitor C11; the second end of capacitor C11 is connected to the first end of the input matching module.

[0047] In this embodiment, the first input terminal of driver U1 serves as a signal receiving terminal to receive the electrical signal input from the outside. At the same time, it is grounded through inductor L8, and inductor L8 can play a role in filtering or stabilizing the input signal. The first output terminal of driver U1 is grounded through capacitor C14, and the second output terminal is grounded through capacitor C15. These two capacitors play a role in filtering to reduce the clutter and interference in the output signal. The signal output from the first output terminal passes through the combination of resistor R3 and capacitor C12, and the signal output from the second output terminal passes through the combination of resistor R4 and capacitor C13. These two groups of resistor and capacitor combinations may be used to adjust the amplitude and phase of the output signal to achieve the desired output characteristics. The second ends of resistor R3 and resistor R4 are commonly connected to the first end of capacitor C11. The two processed signals converge at capacitor C11 and are transmitted to the input matching module through the second end of capacitor C11.

[0048] In this embodiment, the driving module preliminarily processes and enhances the input signal through the filtering of the inductor, the decoupling of the capacitor, and the adjustment of the resistor, providing a stable and compliant driving signal for the subsequent input matching module.

[0049] As Figure 3As shown, in an embodiment of the present disclosure, the input matching module includes: a capacitor C3 and an inductor L1; a first end of the capacitor C3 is connected to a second end of the driving module, and a second end of the capacitor C3 is grounded; a first end of the inductor L1 is connected to the second end of the driving module, and a second end of the inductor L1 is connected to an input end of the power transistor.

[0050] In this embodiment, the capacitor C3 mainly functions to block the DC component, preventing the DC signal output by the driving module from entering the subsequent power transistor, thereby ensuring that the power transistor only receives an AC driving signal and guaranteeing its normal operation and performance. In input matching, the inductor L1 is mainly used to adjust the impedance of the input circuit to match the output impedance of the driving module and the input impedance of the power transistor. Through the inductive reactance characteristic of the inductor, the adjustment of the signal frequency and amplitude is achieved, signal reflection is reduced, and the energy transmission efficiency is improved, thereby ensuring that the driving signal can be transmitted to the input end of the power transistor with the maximum power and minimum loss.

[0051] In this embodiment, the capacitor C3 and the inductor L1 cooperate with each other, respectively playing the roles of blocking DC and adjusting impedance in the input matching module, enabling the signal output from the driving module to be transmitted to the power transistor efficiently and accurately, providing a guarantee for the normal operation of the power transistor and the performance optimization of the entire amplifier.

[0052] As Figure 3 shown, in an embodiment of the present disclosure, the power transistor includes: a switching transistor Q1; a control end of the switching transistor Q1 serves as an input end of the power transistor, the control end of the switching transistor Q1 is used to connect to the Vgs power supply, a first end of the switching transistor Q1 is used to connect to the Vds power supply, a first end of the switching transistor Q1 is connected to the output matching module, and a second end of the switching transistor Q1 is grounded.

[0053] In this embodiment, during the working process, according to the input driving signal and the bias voltage provided by the Vgs power supply, the switching transistor Q1 quickly switches between the conducting and cutoff states. When the switching transistor is conducting, current flows from the Vds power supply through the switching transistor to the ground, realizing energy transmission and power amplification; when the switching transistor is cutoff, the current path is cut off. Through this fast switching action, the input signal is power-amplified and output to the load through the output matching module.

[0054] For example, in high-frequency switching power supply applications, the switching transistor Q1 switches at an extremely high frequency, amplifying the input low-power signal into a high-power output that can meet the load requirements.

[0055] As Figure 3As shown, in an embodiment of the present disclosure, the bias module includes: capacitor C1, resistor R1, resistor R2, and capacitor C2; the first end of capacitor C1 is connected to the control end of switch Q1, and the second end of capacitor C1 is connected to the first end of switch Q1 through resistor R1; the first end of resistor R2 is connected to the control end of switch Q1, and the second end of resistor R2 is grounded through capacitor C2.

[0056] In this embodiment, through the series branch of capacitor C1 and resistor R1, a part of the voltage at the first end (drain) of switch Q1 is fed back to its control end (gate). When the current of switch Q1 increases, resulting in an increase in the drain voltage, the voltage fed back to the gate will also increase accordingly. The increase in the gate voltage will inhibit the further conduction of the switch, thereby reducing the current and drain voltage, forming a self-regulating closed-loop system. Capacitor C1 acts as an AC coupling capacitor, allowing AC signals to pass through while blocking DC signals. This enables the negative feedback mechanism to act only on the AC component, helping to stabilize the dynamic performance of the switch. Capacitor C1 also has a certain filtering effect, which can smooth the high-frequency noise in the feedback signal and reduce unnecessary interference. Resistor R1 provides the necessary impedance for the feedback path, ensuring that the feedback signal can affect the control end of the switch as expected.

[0057] Resistor R2 and capacitor C2 are connected in parallel between the control end of switch Q1 and ground, forming a low-pass filter. This filter can further filter out high-frequency noise and interference signals on the control end, improving the stability and accuracy of the switch control. At the same time, due to the presence of capacitor C2, this parallel branch also has a certain phase compensation effect, helping to improve the transient response characteristics of the circuit.

[0058] As Figure 3 shown, in an embodiment of the present disclosure, the output matching module includes inductor L4, inductor L5, capacitor C6, capacitor C7, capacitor C8, capacitor C9, inductor L6, capacitor C10, and inductor L7; the first end of inductor L4 is connected to the first end of switch Q1, the second end of inductor L4 is grounded through capacitor C6, the first end of inductor L5 is connected to the first end of switch Q1, and the second end of inductor L5 is grounded through capacitor C7; the first end of capacitor C8 is connected to the first end of switch Q1, the second end of capacitor C8 is connected to the first end of capacitor C9, the second end of capacitor C9 is used to connect the load, the second end of capacitor C9 is connected to the first end of capacitor C10, the second end of capacitor C10 is grounded through inductor L7, and inductor L6 is connected in parallel with capacitor C9.

[0059] In this embodiment, inductors L4 and L5 and capacitors C6 and C7 respectively form LC filter networks. Inductors have the property of impeding the change of current in an AC circuit, while capacitors have the ability to store and release charges. These two LC combinations can filter out high-frequency clutter and noise in the output signal, improving the purity and quality of the signal. Capacitor C8 is connected to the first end of switch Q1, serving as a DC-blocking function to prevent DC components from entering the subsequent circuit. Capacitor C9 and inductor L6 are connected in parallel to jointly form an impedance matching network. By adjusting the parameters of the inductor and capacitor, the output impedance can be matched with the load impedance, thereby achieving maximum power transfer and minimum reflection, and improving the energy transfer efficiency. Capacitor C10 and inductor L7 form another LC filter network to further filter out residual clutter and interference in the output signal, ensuring that the signal output to the load is more stable and pure.

[0060] In this embodiment, by introducing a complex output matching module containing components such as inductors and capacitors, efficient filtering, decoupling, impedance matching, and signal reflection suppression of the switch output signal are achieved, thereby significantly improving the signal quality, stability, and circuit efficiency, providing a more reliable and efficient performance guarantee for circuit applications.

[0061] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the present disclosure.

Claims

1. A high integrated power amplifier, characterized in that, It includes: a driving module, an input matching module, a biasing module, a power transistor, and an output matching module; The first end of the driving module serves as a signal receiving end. The second end of the driving module is connected to the first end of the input matching module. The second end of the input matching module is connected to the input end of the power transistor. The output end of the power transistor is connected to a load through the output matching module; The input end of the power transistor is connected to the biasing module.

2. The high-integration power amplifier according to claim 1, characterized in that, It further includes: a temperature detection module, an alarm module, and a microprocessing module; The temperature detection module is used to detect the operating temperature of the power transistor. The temperature detection module is connected to the microprocessing module; The alarm module is connected to the microprocessing module.

3. A high-integration power amplifier according to claim 1, characterized in that, The driving module includes: an inductor L8, a driver U1, a capacitor C14, a resistor R3, a capacitor C12, a resistor R4, a capacitor C15, a capacitor C13, and a capacitor C11; The first input end of the driver U1 serves as a signal receiving end. The first input end of the driver U1 is grounded through the inductor L8. The second input end of the driver U1 is grounded. The power supply end of the driver U1 is used to connect to the VDD power supply. The grounding end of the driver U1 is grounded; The first output end of the driver U1 is grounded through the capacitor C14. The first output end of the driver U1 is connected to the first end of the resistor R3. The second end of the resistor R3 is grounded through the capacitor C12. The second end of the resistor R3 is connected to the first end of the capacitor C11; The second output end of the driver U1 is grounded through the capacitor C15. The second output end of the driver U1 is connected to the first end of the resistor R4. The second end of the resistor R4 is grounded through the capacitor C13. The second end of the resistor R4 is connected to the first end of the capacitor C11; The second end of the capacitor C11 is connected to the first end of the input matching module.

4. A high integrated power amplifier according to claim 1, characterized in that, The input matching module includes: a capacitor C3 and an inductor L1; The first end of the capacitor C3 is connected to the second end of the driving module. The second end of the capacitor C3 is grounded; The first end of the inductor L1 is connected to the second end of the driving module. The second end of the inductor L1 is connected to the input end of the power transistor.

5. The high-integration power amplifier according to claim 1, characterized in that, The power transistor includes: a switching transistor Q1; The control end of the switching transistor Q1 serves as the input end of the power transistor. The control end of the switching transistor Q1 is used to connect to the Vgs power supply. The first end of the switching transistor Q1 is used to connect to the Vds power supply. The first end of the switching transistor Q1 is connected to the output matching module. The second end of the switching transistor Q1 is grounded.

6. The high integrated power amplifier according to claim 5, characterized in that The biasing module includes: a capacitor C1, a resistor R1, a resistor R2, and a capacitor C2; The first end of the capacitor C1 is connected to the control end of the switching transistor Q1. The second end of the capacitor C1 is connected to the first end of the switching transistor Q1 through the resistor R1; The first end of the resistor R2 is connected to the control end of the switching transistor Q1. The second end of the resistor R2 is grounded through the capacitor C2.

7. The high-integration power amplifier as described in claim 5, characterized in that, The output matching module includes an inductor L4, an inductor L5, a capacitor C6, a capacitor C7, a capacitor C8, a capacitor C9, an inductor L6, a capacitor C10, and an inductor L7; The first end of the inductor L4 is connected to the first end of the switching transistor Q1, the second end of the inductor L4 is grounded through the capacitor C6, the first end of the inductor L5 is connected to the first end of the switching transistor Q1, and the second end of the inductor L5 is grounded through the capacitor C7; The first end of the capacitor C8 is connected to the first end of the switching transistor Q1, the second end of the capacitor C8 is connected to the first end of the capacitor C9, the second end of the capacitor C9 is for connecting a load, the second end of the capacitor C9 is connected to the first end of the capacitor C10, the second end of the capacitor C10 is grounded through the inductor L7, and the inductor L6 is connected in parallel with the capacitor C9.

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