Micro-display chip with anti-reflection structure

Abstract

The utility model discloses a micro-display chip with an anti-reflection structure, and relates to the technical field of semiconductors. The surface of the micro-display chip comprises a light-emitting area, a non-light-emitting area and an IO area. Light-emitting pixels are arranged on the light-emitting area; an anti-reflection structure is arranged on the non-light-emitting area, and the anti-reflection structure and the light-emitting pixels are arranged on the surface of the micro-display chip in a tiled mode. Wherein the anti-reflection structure comprises a plurality of anti-reflection units, the anti-reflection units protrude in the direction away from the surface of the micro-display chip, so that the anti-reflection structure is provided with an uneven surface, and the anti-reflection structure is used for conducting diffuse reflection on incident reflected light. The reflected light rays are formed by reflecting light rays emitted by the light-emitting pixels of the light-emitting area through an imaging end arranged opposite to the micro-display chip. Therefore, the problems of glare and ghosting at the imaging end of the equipment are solved through the structural characteristics of the anti-reflection structure.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a microdisplay chip with an anti-reflection structure. Background Art

[0002] At present, microdisplay chips (Micro-LED chips) are widely used in the field of wearable devices, but there are problems of glare and ghosting at the imaging end of the devices: there are a large number of high-reflectivity structures such as metals on the surface of Micro-LED chips. After the light reflected by the coupled optical path is reflected twice by these structures, it enters the coupled optical path again, and finally causes problems of glare and ghosting around the pattern at the imaging end.

[0003] In the related art, after the Micro-LED chip is packaged, an organic black glue (BM) is set on the packaged device to absorb light to solve this problem (as Figure 1 shown), but the absorption of light by the organic black glue has an upper limit, and the high-temperature resistance and mechanical properties are limited, which greatly reduces the reliability of the Micro-LED chip.

[0004] Therefore, there is an urgent need for a new technical solution to solve the problem that the light after the secondary reflection on the surface of the Micro-LED chip affects the imaging effect at the imaging end of the device. Summary of the Utility Model

[0005] The purpose of the utility model is to provide a microdisplay chip with an anti-reflection structure, which can perform diffuse reflection on the light after the secondary reflection on the surface of the Micro-LED chip through the structural characteristics of the anti-reflection structure itself, so as to avoid affecting the imaging effect at the imaging end of the device.

[0006] To achieve the above-mentioned utility model purpose, the utility model proposes the following technical solutions:

[0007] On the one hand, a microdisplay chip with an anti-reflection structure is provided. The surface of the microdisplay chip includes: a light-emitting area, a non-light-emitting area, and an IO area;

[0008] Light-emitting pixels are arranged on the light-emitting area;

[0009] An anti-reflection structure is arranged on the non-light-emitting area, and the anti-reflection structure and the light-emitting pixels are arranged in a tiled manner on the surface of the microdisplay chip;

[0010] Among them, the anti-reflection structure includes a plurality of anti-reflection units, and the plurality of anti-reflection units protrude in a direction away from the surface of the microdisplay chip, so that the anti-reflection structure has an uneven surface. The anti-reflection structure is used for diffuse reflection of incident reflected light, and the reflected light is formed after the light emitted by the light-emitting pixels in the light-emitting area is reflected by the imaging end disposed opposite to the microdisplay chip.

[0011] In a possible implementation manner, the anti-reflection units in the anti-reflection structure are microlens units, and a microlens structure made of the same material as the microlens units is disposed on the outer surface of the light-emitting pixels in the light-emitting area.

[0012] In a possible implementation manner, the material used for the anti-reflection structure is an organic material, and the organic material includes any one of the following: SU8, polyimide.

[0013] In a possible implementation manner, the material used for the anti-reflection structure is an inorganic material, and the inorganic material includes any one of the following: oxide, nitride, oxynitride.

[0014] In a possible implementation manner, the anti-reflection units in the anti-reflection structure are coarsened compound pixel units, and the compound pixel units are made of the same material as the light-emitting pixels.

[0015] In a possible implementation manner, the compound pixel material used for the anti-reflection structure includes any one of the following: gallium nitride, gallium arsenide, aluminum gallium indium phosphide.

[0016] In a possible implementation manner, a passivation layer is disposed on the anti-reflection structure.

[0017] In a possible implementation manner, the shape of each anti-reflection unit is any one of the following: cone, cylinder, hemisphere, semi-rugby ball, square column, triangular pyramid.

[0018] In a possible implementation manner, the filling ratio corresponding to the anti-reflection structure is greater than 50%, and the filling ratio is the ratio of the total projected area of the anti-reflection structure to the total area of the non-light-emitting area.

[0019] In a possible implementation manner, the ratio of the height to the diameter of each anti-reflection unit is greater than or equal to 0.5.

[0020] In a possible implementation manner, the range of the phase spacing between each anti-reflection unit is 0.5 - 5 μm.

[0021] Compared with the prior art, the present utility model has the following beneficial effects:

[0022] A microdisplay chip with an antireflection structure is provided. Light-emitting pixels are arranged on the light-emitting area, and an antireflection structure is arranged on the non-light-emitting area. The antireflection structure and the light-emitting pixels are arranged in a tiled manner on the surface of the microdisplay chip. The antireflection structure includes a plurality of antireflection units, and the plurality of antireflection units protrude in a direction away from the surface of the microdisplay chip, so that the antireflection structure has an uneven surface. The antireflection structure is used to diffusely reflect the incident reflected light. By diffusely reflecting light through the structure itself, compared with the method of absorbing light through light-absorbing materials such as organic black glue, the antireflection performance is stronger, and the high-temperature resistance and mechanical properties are also stronger than those of light-absorbing materials.

[0023] Furthermore, the antireflection structure can be formed using organic materials or inorganic materials, and can be operated simultaneously with the microlens process. It can also be operated simultaneously with the compound pixel material and the roughening process, eliminating the need for a separate antireflection layer processing step, and simplifying the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of a structure in which organic black glue is arranged on a packaged microdisplay chip provided in the related art;

[0025] Figure 2 is a schematic structural diagram of a microdisplay chip surface having an antireflection structure provided in an embodiment of the present application;

[0026] Figure 3 is a schematic structural diagram of an antireflection unit in the antireflection structure provided in an embodiment of the present application;

[0027] Figure 4 is a schematic diagram of the arrangement of the antireflection structure provided in an embodiment of the present application;

[0028] Figure 5 is a schematic diagram of the reflectivity comparison of different antireflection structures provided in an embodiment of the present application;

[0029] Figure 6 is a schematic diagram of the reflectivity comparison of different antireflection structures provided in an embodiment of the present application;

[0030] Figure 7 is a schematic diagram of the reflectivity comparison of different antireflection structures provided in an embodiment of the present application;

[0031] Figure 8 is a schematic diagram of the reflectivity comparison of different antireflection structures provided in an embodiment of the present application;

[0032] Figure 9 is a schematic diagram of an antireflection unit presented as a microlens unit provided in an embodiment of the present application;

[0033] Figure 10It is a schematic diagram of an anti-reflection unit provided in an embodiment of the present application, which is a roughened compound pixel unit;

[0034] Figure 11 It is a process flow chart of a method for manufacturing a microdisplay chip provided in an embodiment of the present application;

[0035] Figure 12 It is a schematic diagram of a preparation process for preparing an anti-reflection structure on the surface of a microdisplay chip provided in an embodiment of the present application;

[0036] Figure 13 It is a schematic diagram of a preparation process for preparing an anti-reflection structure on the surface of a microdisplay chip provided in an embodiment of the present application;

[0037] Figure 14 It is a schematic diagram of a preparation process for preparing an anti-reflection structure on the surface of a microdisplay chip provided in an embodiment of the present application;

[0038] Figure 15 It is a schematic diagram of a preparation process for preparing an anti-reflection structure on the surface of a microdisplay chip provided in an embodiment of the present application.

[0039] Reference numerals:

[0040] 100 - microdisplay chip, 10 - anti-reflection structure, 20 - light-emitting pixel, 30 - passivation layer, 40 - high-reflection material. Detailed implementation manners

[0041] To make the objectives, technical solutions, and advantages of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0042] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "vertical", "upper", "lower", "top", "side", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present utility model. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, unless otherwise specified, the meaning of "plurality" is two or more.

[0043] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and defined, the terms "installation", "connection", and "coupling" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0044] Regarding the problems of imaging glare and ghosting caused by surface reflection of Micro-LED chips, the solutions provided in the related art, such as setting light-absorbing materials such as organic black glue (BM), have poor anti-reflection ability, mechanical properties, and reliability.

[0045] To avoid the above problems, in the embodiments of the present application, a novel anti-reflection structure is proposed, which is prepared in the area that needs anti-reflection on the surface of the Micro-LED chip, diffuses the light reaching its surface, and makes it unable to enter the coupling optical path, thereby solving the problems of glare and ghosting existing at the imaging end of the device.

[0046] Next, the device structure proposed in the present application will be described.

[0047] First, the embodiments of the present application provide a microdisplay chip 100 having an anti-reflection structure 10. The surface of the microdisplay chip 100 includes: a light-emitting area, a non-light-emitting area, and an IO area.

[0048] As Figure 9 、 Figure 10As shown in the figure, a light-emitting pixel 20 is disposed on the light-emitting region; an anti-reflection structure 10 is disposed on the non-light-emitting region. The anti-reflection structure 10 and the light-emitting pixel 20 are arranged in a tiled manner on the surface of the microdisplay chip 100. The anti-reflection structure 10 includes a plurality of anti-reflection units, and the plurality of anti-reflection units protrude in a direction away from the surface of the microdisplay chip 100, so that the anti-reflection structure 10 has an uneven surface. The anti-reflection structure 10 is used for diffusely reflecting incident reflected light, and the reflected light is the light formed after the light emitted by the light-emitting pixel 20 in the light-emitting region is reflected by the imaging end disposed opposite to the microdisplay chip 100.

[0049] In the embodiment of the present application, as Figure 2 shown, the microdisplay chip 100 includes a high-reflection material 40. The high-reflection material 40 may specifically include the metal electrodes used in the integrated circuit substrate and the light-emitting pixel 20 in the microdisplay chip 100. In view of the secondary reflection of the emitted light by the high-reflection material 40, an anti-reflection structure 10 is disposed on the surface of the non-light-emitting region of the microdisplay chip 100. The anti-reflection structure 10 has an uneven surface. The anti-reflection structure 10 can be a light-transmitting material. Instead of absorbing light, it has a diffuse reflection function based on its structural characteristics, and can diffusely reflect the light reaching the surface of the non-light-emitting region (i.e., the reflected light formed by the reflection of the imaging end), so as to avoid the reflected light entering the coupling optical path through secondary reflection, and further avoid the problems of glare and ghosting existing in the imaging end of the device caused by this part of the light.

[0050] Among them, the shape of each anti-reflection unit is any one of the following: cone, cylinder, hemisphere, semi-rugby ball, square column, triangular pyramid. In the embodiment of the present application, the anti-reflection units in the anti-reflection structure 10 can protrude from the surface of the non-light-emitting region of the microdisplay chip 100 in various forms of shapes. In addition, the shapes of the respective anti-reflection units can be the same or different, and the present application does not limit this.

[0051] Among them, the ratio of the height to the diameter of each anti-reflection unit is greater than or equal to 0.5. The ratio of the height to the diameter of each anti-reflection unit affects the degree of unevenness of the chip surface. As Figure 3 shown, the height of the anti-reflection unit is denoted as H, and the diameter is denoted as D. In order to ensure the diffuse reflection effect of the anti-reflection structure 10, therefore, the ratio of the height H to the diameter D is greater than or equal to 0.5. Further, the characteristic dimension of H is 0.25 - 25 μm.

[0052] Among them, the range of the phase spacing of each anti-reflection unit is 0.5 - 5 μm. The distance of the phase spacing of each anti-reflection unit affects the degree of unevenness of the chip surface, and it is difficult to achieve in the process if it is too small. As Figure 3As shown, the size of the periodic antireflection unit is denoted as P. To ensure the diffuse reflection effect of the antireflection structure 10 and facilitate the process preparation, the size P of the periodic antireflection unit ranges from 0.5 to 5 μm. In addition, the diameter D of the antireflection unit needs to be less than or equal to P, and the characteristic size of D is 0.25 to 5 μm.

[0053] In a possible implementation, the filling ratio corresponding to the antireflection structure 10 is greater than 50%, and the filling ratio is the ratio of the total projected area of the antireflection structure 10 to the total area of the non-emitting region.

[0054] In this implementation, by designing the filling ratio to be greater than 50%, it can be ensured that the proportion of the antireflection structure 10 in the total area of the antireflection surface required is high enough, thereby ensuring the diffuse reflection effect of the antireflection structure 10.

[0055] Among them, to achieve a filling ratio greater than 50%, the arrangement of the antireflection structure 10 can be controlled. Exemplarily, with reference to Figure 4 , in an example, the antireflection structure 10 uses a one-dimensional close packing, and its highest filling ratio is 78.5%. To further increase the filling ratio, the antireflection structure 10 can use other arrangements to further reduce the reflectivity and improve the antireflection performance. In a two-dimensional close packing, its filling ratio can be increased to a maximum of 90.7%.

[0056] It can be pointed out that when P is the same, the larger the filling ratio, the smaller the reflectivity, and the stronger the diffuse reflection effect of the antireflection structure 10; when the filling ratio is the same, the smaller P is, the smaller the reflectivity, and the stronger the diffuse reflection effect of the antireflection structure 10.

[0057] As Figure 5 shown in Group A, where P is 2.5 μm for all. When the diameter D of the antireflection structure 10 corresponding to this application is 1.85 μm (marked as A1.85 in the figure) and 2.1 μm (marked as A2.1 in the figure) respectively, the comparison of the reflectivity on the surface of the antireflection structure 10 with the reflectivity of the Au metal surface and the reflectivity of the organic black glue (BM) surface. In the field of Micro-LED displays, within the wavelength range of 440 nm - 640 nm for blue, green, and red light chips, the reflectivity of the antireflection structure 10 corresponding to this application is lower than that of the organic black glue (BM), and the antireflection ability is better than that of the organic black glue (BM).

[0058] As Figure 6Shown is Group B, where P is 3.75 μm for all. The diameter D of the antireflection structure 10 corresponding to this application is 2.0 μm (marked as B2.0 in the figure), 2.25 μm (marked as B2.25 in the figure), 2.75 μm (marked as B2.75 in the figure), and 3.25 μm (marked as B3.25 in the figure). The comparison of the reflectivity of the surface of the antireflection structure 10 with the reflectivity of the Au metal surface and the reflectivity of the organic black glue (BM) surface is presented. When P is the same, the larger the filling ratio, the smaller the reflectivity, and the stronger the antireflection ability.

[0059] As Figure 7 Shown is Group C, where P is 5 μm for all. The diameter D of the antireflection structure 10 corresponding to this application is 1.95 μm (marked as C1.95 in the figure), 2.45 μm (marked as C2.45 in the figure), 2.85 μm (marked as C2.85 in the figure), 3.35 μm (marked as C3.35 in the figure), 3.80 μm (marked as 3.80 in the figure), and 4.30 μm (marked as C4.30 in the figure). The comparison of the reflectivity of the surface of the antireflection structure 10 with the reflectivity of the Au metal surface and the reflectivity of the organic black glue (BM) surface is presented. When P is the same, the larger the filling ratio, the smaller the reflectivity, and the stronger the antireflection ability.

[0060] As Figure 8 Shown is the comparison of the reflectivity of the surfaces of the three structures A2.1, B3.25, and C4.30 mentioned above with the reflectivity of the Au metal surface and the reflectivity of the organic black glue (BM) surface. The filling ratios of these three structures are close, being 55%, 59%, and 58% respectively. When the filling ratio is the same, the smaller P is, the smaller the reflectivity, and the stronger the antireflection ability.

[0061] In a possible implementation, as Figure 9 shown, the antireflection unit in the antireflection structure 10 is a microlens unit, and a microlens structure made of the same material as the microlens unit is provided on the outer surface of the light-emitting pixel 20 in the light-emitting area.

[0062] In this implementation, the antireflection structure 10 can adopt the same process as the microlens structure corresponding to the light-emitting pixel 20 in the light-emitting area and be fabricated simultaneously. Therefore, the antireflection unit in the antireflection structure 10 presents as a microlens unit.

[0063] Furthermore, the material used for the antireflection structure 10 is an organic material, and the organic material includes any one of the following: SU8, polyimide. That is, the antireflection structure 10 in the form of a microlens unit can be fabricated using organic materials such as SU8 and polyimide.

[0064] Further, the material used for the antireflection structure 10 is an inorganic material, and the inorganic material includes any one of the following: oxides, nitrides, and oxynitrides. That is, the antireflection structure 10 in the form of microlens units can be prepared from inorganic materials such as oxides, nitrides, and oxynitrides.

[0065] In another possible implementation, as Figure 10 shown, the antireflection units in the antireflection structure 10 are roughened compound pixel units, and the compound pixel units are made of the same material as the light-emitting pixels 20.

[0066] In this implementation, the antireflection structure 10 can be fabricated using the same process as the light-emitting pixels 20 in the roughened light-emitting region and prepared simultaneously. Therefore, the antireflection units in the antireflection structure 10 are presented as roughened compound pixel units.

[0067] Further, the compound pixel materials used for the antireflection structure 10 include any one of the following: gallium nitride, gallium arsenide, and aluminum gallium indium phosphide. That is, the antireflection structure 10 in the form of roughened compound pixel units can be prepared from compound pixel materials such as gallium nitride, gallium arsenide, and aluminum gallium indium phosphide.

[0068] Further, a passivation layer 30 ( Figure 10 not shown in the figure) is provided on the antireflection structure 10. By providing the passivation layer 30, the antireflection structure 10 formed in the form of roughened compound pixel units is insulated and protected. Among them, the passivation layer 30 can be a single layer or a stack of insulating dielectric layers such as aluminum oxide, silicon nitride, and silicon oxide.

[0069] It can be understood that compared with light-absorbing materials such as organic black glue, the high-temperature resistant transparent materials such as SU8 and polyimide, and various inorganic transparent materials in the above implementation have higher reliability and stronger antireflection ability.

[0070] In summary, the embodiment of the present application provides a microdisplay chip with an antireflection structure. Light-emitting pixels are provided on the light-emitting region, and an antireflection structure is provided on the non-light-emitting region. The antireflection structure and the light-emitting pixels are arranged flat on the surface of the microdisplay chip, and the antireflection structure includes a plurality of antireflection units. The plurality of antireflection units protrude in a direction away from the surface of the microdisplay chip, so that the antireflection structure has an uneven surface. The antireflection structure is used to perform diffuse reflection on the incident reflected light. By diffusing light through the structure itself, compared with the method of absorbing light through light-absorbing materials such as organic black glue, the antireflection performance is stronger, and the high-temperature resistance and mechanical properties are also stronger than those of light-absorbing materials.

[0071] Furthermore, the anti-reflection structure can be formed using organic materials or inorganic materials, operating simultaneously with the microlens process. It can also use compound pixel materials and operate simultaneously with the roughening process, eliminating the need for a separate anti-reflection layer processing step and simplifying the process.

[0072] Next, a method for manufacturing a microdisplay chip corresponding to the above-described structure will be described.

[0073] As Figure 11 shown, the method for manufacturing a microdisplay chip may include the following steps:

[0074] Step S1: Prepare light-emitting pixels on the light-emitting area and an anti-reflection structure on the non-light-emitting area. The anti-reflection structure and the light-emitting pixels are arranged in a tiled manner on the surface of the microdisplay chip. Among them, the anti-reflection structure includes a plurality of anti-reflection units, and the plurality of anti-reflection units protrude in a direction away from the surface of the microdisplay chip, so that the anti-reflection structure has an uneven surface. The anti-reflection structure is used to perform diffuse reflection on the incident reflected light, and the reflected light is the light formed after the light emitted by the light-emitting pixels in the light-emitting area is reflected by the imaging end disposed opposite to the microdisplay chip.

[0075] Among them, the anti-reflection structure can use organic materials, such as high-temperature resistant materials (≥200 °C) like SU8 and polyimide, and can be manufactured through processes such as photolithography, photoresist melting, laser direct writing, and nanoimprinting. It can also use inorganic materials and be manufactured through processes such as plasma etching and ion beam etching. It can also form an anti-reflection structure by roughening the surface of compound pixel materials such as gallium nitride (GaN) and aluminum gallium indium phosphide (AlGaInP).

[0076] In one embodiment, with reference to Figure 12 , the anti-reflection unit is a microlens unit. While manufacturing the organic microlens structure in the light-emitting area, the anti-reflection structure 10 is manufactured in the non-light-emitting area. Correspondingly, step S1 can specifically include:

[0077] (1) Prepare light-emitting pixels on the light-emitting area.

[0078] (2) Spin-coat an organic material on the light-emitting area and the non-light-emitting area to form a lens material layer, and the lens material layer covers the light-emitting pixels.

[0079] Among them, the organic material can be a high-temperature resistant material (≥200 °C) such as SU8 and polyimide.

[0080] (3) Perform photolithography on the lens material layer to form a plurality of lens intermediate structures with a planar surface type on the light-emitting area and the non-light-emitting area.

[0081] (4) Perform thermal reflow on the intermediate lens structure to transform the intermediate lens structure into a curved surface profile, obtaining the microlens structure on the light-emitting pixels and the microlens units on the non-light-emitting areas.

[0082] In one embodiment, with reference to Figure 13 , the antireflection unit is a microlens unit. While manufacturing the inorganic microlens structure in the light-emitting area, an antireflection structure 10 is manufactured in the non-light-emitting area; correspondingly, step S1 may specifically include:

[0083] (1) Prepare light-emitting pixels on the light-emitting area.

[0084] (2) Fill the light-emitting area and the non-light-emitting area with an inorganic material to form a lens material layer, and the lens material layer is disposed above the light-emitting pixels.

[0085] Among them, the inorganic material may be inorganic silicon oxide, silicon nitride, aluminum oxide, etc., including PSG (phosphate glass), BPSG (borophosphosilicate glass) processes or inorganic silicon oxide or nitrogen oxides prepared using deposition sources such as TEOS (tetraethoxysilane), TEPO (triethyl phosphate), etc.

[0086] (3) Perform photolithography and plasma etching on the lens material layer to form a plurality of intermediate lens structures with a planar profile on the light-emitting area and the non-light-emitting area.

[0087] (4) Perform ion beam etching on the intermediate lens structure to transform the intermediate lens structure into a curved surface profile, obtaining the microlens structure on the light-emitting pixels and the microlens units on the non-light-emitting areas.

[0088] In one embodiment, with reference to Figure 14 , the antireflection unit is a microlens unit. While manufacturing the inorganic microlens structure in the light-emitting area, an antireflection structure 10 is manufactured in the non-light-emitting area; correspondingly, step S1 may specifically include:

[0089] (1) Prepare light-emitting pixels on the light-emitting area.

[0090] (2) Fill the light-emitting area and the non-light-emitting area with an inorganic material to form a lens material layer, and the lens material layer is disposed above the light-emitting pixels.

[0091] Among them, the inorganic material may be inorganic silicon oxide, silicon nitride, aluminum oxide, etc., including PSG (phosphate glass), BPSG (borophosphosilicate glass) processes or inorganic silicon oxide or nitrogen oxides prepared using deposition sources such as TEOS (tetraethoxysilane), TEPO (triethyl phosphate), etc.

[0092] (3) Prepare a photoresist structure on the lens material layer and perform thermal reflow on the photoresist structure to transform the photoresist structure into a curved surface profile.

[0093] (4) Perform plasma etching on the lens material layer to transfer the curved surface profile of the photoresist structure to the lens material layer, obtaining a microlens structure on the light-emitting pixel and a microlens unit on the non-light-emitting area.

[0094] In one embodiment, with reference to Figure 15 , the antireflection unit is a roughened compound pixel unit. While roughening the surface of the light-emitting pixel, an antireflection structure 10 is fabricated in the non-light-emitting area. Correspondingly, step S1 may specifically include:

[0095] (1) Bond the compound pixel material on the light-emitting area and the non-light-emitting area to form a compound pixel material layer.

[0096] (2) Pixelate the compound pixel material layer on the light-emitting area to form light-emitting pixels.

[0097] (3) Roughen the compound pixel material layer on the light-emitting pixels and the non-light-emitting area to obtain the roughened light-emitting pixels on the light-emitting area and the roughened compound pixel units on the non-light-emitting area.

[0098] Further, as Figure 15 shown, after the roughening process is completed, an insulating dielectric can be further deposited on the surface of the light-emitting pixels and the surface of the antireflection structure to form a passivation layer 30. In addition, a common cathode layer and microlenses can be further prepared for the light-emitting pixels 20 in the light-emitting area.

[0099] In summary, the method for manufacturing a microdisplay chip provided by the embodiments of the present application sets light-emitting pixels on the light-emitting area and an antireflection structure on the non-light-emitting area. The antireflection structure and the light-emitting pixels are arranged in a tiled manner on the surface of the microdisplay chip, and the antireflection structure includes multiple antireflection units. The multiple antireflection units protrude in a direction away from the surface of the microdisplay chip, so that the antireflection structure has an uneven surface. The antireflection structure is used to perform diffuse reflection on the incident reflected light. By diffusing light through the structure itself, compared with the method of absorbing light through light-absorbing materials such as organic black glue, the antireflection performance is stronger, and the high-temperature resistance and mechanical properties are also stronger than those of light-absorbing materials.

[0100] Further, the antireflection structure can be formed using organic materials or inorganic materials, and can be operated simultaneously with the microlens process. It can also be operated simultaneously with the compound pixel material and the roughening process, without the need for a separate antireflection layer processing step, and the process is more simplified.

[0101] All the above optional technical solutions can be combined arbitrarily to form alternative embodiments of the present invention, that is, any number of embodiments can be combined to meet the requirements of different application scenarios, and all are within the protection scope of the present application, and will not be elaborated here one by one.

[0102] It should be noted that the above is only a preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A microdisplay chip with an anti-reflection structure, characterized in that, The surface of the microdisplay chip includes: a light-emitting area, a non-light-emitting area, and an IO area; Light-emitting pixels are disposed on the light-emitting area; An anti-reflection structure is disposed on the non-light-emitting area, and the anti-reflection structure and the light-emitting pixels are arranged in a tiled manner on the surface of the microdisplay chip; Wherein, the anti-reflection structure includes a plurality of anti-reflection units, and the plurality of anti-reflection units protrude in a direction away from the surface of the microdisplay chip, so that the anti-reflection structure has an uneven surface. The anti-reflection structure is used for diffusely reflecting incident reflected light, and the reflected light is light formed after the light emitted by the light-emitting pixels in the light-emitting area is reflected by an imaging end disposed opposite to the microdisplay chip.

2. The microdisplay chip according to claim 1, wherein The anti-reflection units in the anti-reflection structure are microlens units, and a microlens structure made of the same material as the microlens units is disposed on the outer surface of the light-emitting pixels on the light-emitting area.

3. The microdisplay chip according to claim 2, wherein The material used for the anti-reflection structure is an organic material, and the organic material includes any one of the following: SU8, polyimide.

4. The microdisplay chip according to claim 2, wherein The material used for the anti-reflection structure is an inorganic material, and the inorganic material includes any one of the following: oxides, nitrides, oxynitrides.

5. The microdisplay chip according to claim 1, wherein The anti-reflection units in the anti-reflection structure are roughened compound pixel units, and the compound pixel units and the light-emitting pixels are made of the same material.

6. The microdisplay chip according to claim 5, wherein The compound pixel material used for the anti-reflection structure includes any one of the following: gallium nitride, gallium arsenide, aluminum gallium indium phosphide.

7. The microdisplay chip according to claim 5, wherein A passivation layer is disposed on the anti-reflection structure.

8. The microdisplay chip according to claim 1, wherein The shape of each anti-reflection unit is any one of the following: cone, cylinder, hemisphere, semi-rugby ball, square column, triangular pyramid.

9. The microdisplay chip according to claim 1, wherein The filling ratio corresponding to the anti-reflection structure is greater than 50%, and the filling ratio is the ratio of the total projected area of the anti-reflection structure to the total area of the non-light-emitting area.

10. The microdisplay chip according to claim 1, wherein The ratio of the height to the diameter of each anti-reflection unit is greater than or equal to 0.

5.

11. The microdisplay chip according to claim 1, wherein The range of the phase spacing between each anti-reflection unit is 0.5 - 5 μm.

Images