Semiconductor laser packaging element
By forming an isolation layer on the inner wall of the tube cap of the laser packaging element, the corrosion and oxidation problems caused by element precipitation after sealing of the nitride semiconductor ultraviolet laser are solved, and the incidence of dead lamps and optical damage is significantly reduced.
Patent Information
- Application Number
- CN202421775496.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-25
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-07-25
AI Technical Summary
After the nitride semiconductor ultraviolet laser is sealed, the tube shell of the tube cap will precipitate elements such as H atoms, O atoms, H2 molecules or O2 molecules, causing corrosion or oxidation of the end surface of the laser, causing dead lamps or optical catastrophic damage.
An isolation layer is formed on the inner wall of the tube cap of the laser packaging element, including various metal isolation layer combinations, to inhibit the precipitation of these elements and isolate the end surface corrosion and oxidation of the laser chip.
Effectively suppress the damage of packaged dead lamps and optical catastrophic disasters, and the proportion of packaged dead lamps and aging dead lamps has been significantly reduced to 20~50PPM.
Smart Images
Figure CN223109449U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of semiconductor optoelectronic devices, and particularly to a semiconductor laser packaging component. Background Art
[0002] Lasers are widely used in fields such as laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level; 2) The operating current density of lasers reaches KA / cm 2 , which is more than two orders of magnitude higher than that of nitride light-emitting diodes, thus causing stronger electron leakage, more serious Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, resulting in a more serious efficiency droop effect; 3) Light-emitting diodes undergo spontaneous transition radiation, and without external action, it is incoherent light that transitions from a high energy level to a low energy level, while lasers are stimulated transition radiation, and the energy of the induced photons should be equal to the energy difference between the electron transitions, generating completely identical coherent light of photons and induced photons; 4) Different principles: Light-emitting diodes generate radiative recombination luminescence when electrons and holes transition to the active layer or p-n junction under the action of an external voltage, while lasers can only lasing when the lasing conditions are met. It must satisfy the inverted distribution of carriers in the active region, and the stimulated emission light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, satisfies the threshold condition so that the gain is greater than the loss, and finally outputs laser light. Nitride semiconductor ultraviolet lasers have the following problems: After the laser packaging component is sealed, elements such as H atoms, O atoms, H2 molecules, or O2 molecules will precipitate from the shell of the cap without an isolation layer, resulting in corrosion or oxidation of the laser end face, thereby causing the laser to die or suffer optical catastrophic damage. Summary of the Utility Model
[0003] To solve the above technical problems, the present application provides a semiconductor laser packaging component. The packaging forms include plastic packaging components, TO-CAN (Transistor Outline) can-type packaging components, and COS (Chip-on-Submount) packaging components. The laser packaging component includes pins, a header, a tongue, a cap, a heat sink, and a laser chip. The cap of the laser packaging component is a cap with an isolation layer; the cap includes a cap shell, a plating layer on the inner wall of the cap, and a lens.
[0004] Preferably, the plating layer on the inner wall of the cap is any one or any combination of a nickel isolation layer, a palladium isolation layer, a gold isolation layer, an iridium isolation layer, a silver isolation layer, a nickel / palladium isolation layer, a palladium / nickel isolation layer, a (palladium / nickel)x periodic structure isolation layer, a (nickel / palladium)y periodic structure isolation layer, a palladium / gold isolation layer, a palladium / silver isolation layer, a palladium / iridium isolation layer, a gold / palladium isolation layer, a silver / palladium isolation layer, an iridium / palladium isolation layer, a (palladium / gold)z periodic structure isolation layer, a (palladium / silver)m periodic structure isolation layer, a (palladium / iridium) n periodic structure isolation layer, a (gold / palladium)p periodic structure isolation layer, a (silver / palladium)q periodic structure isolation layer, a (iridium / palladium)t periodic structure isolation layer, a chromium isolation layer, a chromium / palladium isolation layer, a palladium / chromium isolation layer, a (palladium / chromium)s periodic structure isolation layer, a (chromium / palladium)u periodic structure isolation layer, where: x≥1, y≥1, z≥1, m≥1, n≥1, p≥1, q≥1, t≥1, s≥1, u≥1.
[0005] Preferably, the cap shell is any one or any combination of copper, aluminum, silver, gold, chromium, nickel, carbon, titanium, stainless steel, copper tungsten, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, iron-clad copper, and copper-clad iron.
[0006] Preferably, the density of the cap shell is less than or equal to the density of the plating layer on the inner wall of the cap; the density of the cap shell is 5 - 10 g / cm3, and the density of the plating layer on the inner wall of the cap is 9 - 15 g / cm3; the shear modulus of the cap shell is greater than or equal to the shear modulus of the plating layer on the inner wall of the cap; the shear modulus of the cap shell is 40 - 60 GPa, and the density of the plating layer on the inner wall of the cap is 30 - 55 GPa.
[0007] Preferably, the cap with an isolation layer is a cap with a nickel isolation layer plated on the inner wall of a copper cap shell, a cap with a palladium isolation layer plated on the inner wall of a copper cap shell, a cap with a nickel / palladium isolation layer plated on the inner wall of a copper cap shell, a cap with a palladium / nickel isolation layer plated on the inner wall of a copper cap shell, a cap with a (palladium / nickel)x periodic structure isolation layer plated on the inner wall of a copper cap shell, a cap with a (nickel / palladium)y periodic structure isolation layer plated on the inner wall of a copper cap shell;
[0008] The cap with an isolation layer has a nickel-plated isolation layer on the inner wall of the cap with an iron cap shell, a palladium-plated isolation layer on the inner wall of the cap with an iron cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with an iron cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with an iron cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with an iron cap shell, and a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with an iron cap shell;
[0009] The cap with an isolation layer has a nickel-plated isolation layer on the inner wall of the cap with a copper / iron cap shell, a palladium-plated isolation layer on the inner wall of the cap with a copper / iron cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with a copper / iron cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with a copper / iron cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with a copper / iron cap shell, a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with a copper / iron cap shell, a nickel-plated isolation layer on the inner wall of the cap with an iron / copper cap shell, a palladium-plated isolation layer on the inner wall of the cap with an iron / copper cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with an iron / copper cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with an iron / copper cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with an iron / copper cap shell, and a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with an iron / copper cap shell;
[0010] The cap with an isolation layer has a nickel-plated isolation layer on the inner wall of the cap with an iron-clad copper cap shell, a palladium-plated isolation layer on the inner wall of the cap with an iron-clad copper cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with an iron-clad copper cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with an iron-clad copper cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with an iron-clad copper cap shell, a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with an iron-clad copper cap shell, a nickel-plated isolation layer on the inner wall of the cap with a copper-clad iron cap shell, a palladium-plated isolation layer on the inner wall of the cap with a copper-clad iron cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with a copper-clad iron cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with a copper-clad iron cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with a copper-clad iron cap shell, a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with a copper-clad iron cap shell, a nickel-plated isolation layer on the inner wall of the cap with a copper-clad stainless steel cap shell, a palladium-plated isolation layer on the inner wall of the cap with a copper-clad stainless steel cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with a copper-clad stainless steel cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with a copper-clad stainless steel cap shell, a (palladium / nickel) x-periodic structure isolation layer plated on the inner wall of the cap with a copper-clad stainless steel cap shell, and a (nickel / palladium) y-periodic structure isolation layer plated on the inner wall of the cap with a copper-clad stainless steel cap shell.
[0011] Preferably, the plating layer on the inner wall of the cap is (palladium / nickel) xThe periodic structure isolation layer includes the x = 2 periodic structure of palladium / nickel / palladium / nickel, the x = 3 periodic structure of palladium / nickel / palladium / nickel / palladium / nickel, the x = 4 periodic structure of palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel, and the x = 5 periodic structure of palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel; the (nickel / palladium)y periodic structure isolation layer includes the x = 2 periodic structure of nickel / palladium / nickel / palladium, the x = 3 periodic structure of nickel / palladium / nickel / palladium / nickel / palladium, the x = 4 periodic structure of nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium, and the x = 5 periodic structure of nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium.
[0012] Preferably, the thickness of the inner wall coating of the cap is 5 nanometers to 5000 micrometers; the thickness of the cap shell is 50 micrometers to 50 millimeters.
[0013] Preferably, the Poisson's ratio of the cap shell is less than or equal to the Poisson's ratio of the inner wall coating of the cap; the Poisson's ratio of the cap shell is 0.2 to 0.4, and the Poisson's ratio of the inner wall coating of the cap is 0.3 to 0.5; the first ionization energy of the cap shell is greater than or equal to the first ionization energy of the inner wall coating of the cap; the first ionization energy of the cap shell is 650 to 950 KJ / mol, and the first ionization energy of the inner wall coating of the cap is 300 to 650 KJ / mol.
[0014] Preferably, the packaged component further includes a Zener diode;
[0015] The materials of the pin and the header include any one or any combination of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, copper tungsten, beryllium oxide, kovar, Mo, silicon, Nb, titanium, iron, copper / iron composite material, copper / aluminum composite material, and copper-clad iron.
[0016] The heat sink materials include any one or any combination of silicon carbide, aluminum nitride, diamond, silicon, copper tungsten, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, and indium phosphide;
[0017] The laser includes semiconductor lasers such as gallium nitride-based lasers, gallium arsenide-based lasers, indium phosphide-based lasers, aluminum nitride-based lasers, and indium gallium nitride-based lasers, and the laser wavelength covers 200 nm to 3000 nm.
[0018] The beneficial effects of this application compared with the prior art are as follows: a layer of isolation layer is formed on the cap shell to inhibit the precipitation of elements or impurity elements such as hydrogen atoms, oxygen atoms, H2 molecules, or O2 molecules in the cap shell material, isolate the corrosion and oxidation of the end face of the laser chip, inhibit the dead lamp in packaging and optical catastrophic damage, and the proportion of dead lamps and aging dead lamps in packaging drops from 0.5 to 50% to 20 to 50 PPM. Brief Description of the Drawings
[0019] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The drawings illustrate the embodiments and, together with the description, are used to explain the principles of the present application. Other embodiments and many of the expected advantages of the embodiments will be readily appreciated as they become better understood by reference to the following detailed description. Other features, objects, and advantages of the present application will become more apparent from the following detailed description of non-limiting embodiments read in conjunction with the accompanying drawings:
[0020] Figure 1 is a schematic structural diagram of a semiconductor laser packaging component according to an embodiment of the application;
[0021] Figure 2 is a schematic structural diagram of a semiconductor laser packaging component according to an embodiment of the application.
[0022] The meanings of the numbers in the figure: 100, pin; 101, header; 102, tab; 103, heat sink; 104, laser; 105, cap; 105a, cap shell; 105b, inner wall plating of the cap; 105c, lens; 106, Zener diode. Detailed Description of the Embodiments
[0023] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only for explaining the relevant application and not for limiting the application. Additionally, it should be noted that for the sake of convenience of description, only the parts related to the relevant application are shown in the drawings.
[0024] Figure 1 is a schematic structural diagram of a semiconductor laser packaging component and its growth method according to an embodiment of the application, Figure 2 is a schematic structural diagram of a semiconductor laser packaging component according to an embodiment of the application, as Figure 1 and Figure 2 shown, the packaging forms include plastic packaging components, TO-CAN (Transistor Outline) can-type packaging components, COS (Chip-on-Submount) packaging components. The laser 104 packaging component includes a pin 100, a header 101, a tab 102, a cap 105, a heat sink 103, and a laser 104 chip. The cap 105 of the laser 104 packaging component is a cap 105 with an isolation layer; the cap 105 includes a cap shell 105a, an inner wall plating 105b of the cap, and a lens 105c.
[0025] Preferably, the inner wall coating 105b of the cap is any one or any combination of a nickel isolation layer, a palladium isolation layer, a gold isolation layer, an iridium isolation layer, a silver isolation layer, a nickel / palladium isolation layer, a palladium / nickel isolation layer, a (palladium / nickel)x periodic structure isolation layer, a (nickel / palladium)y periodic structure isolation layer, a palladium / gold isolation layer, a palladium / silver isolation layer, a palladium / iridium isolation layer, a gold / palladium isolation layer, a silver / palladium isolation layer, an iridium / palladium isolation layer, a (palladium / gold)z periodic structure isolation layer, a (palladium / silver)m periodic structure isolation layer, a (palladium / iridium)n periodic structure isolation layer, a (gold / palladium)p periodic structure isolation layer, a (silver / palladium)q periodic structure isolation layer, a (iridium / palladium)t periodic structure isolation layer, a chromium isolation layer, a chromium / palladium isolation layer, a palladium / chromium isolation layer, a (palladium / chromium)s periodic structure isolation layer, a (chromium / palladium)u periodic structure isolation layer, where: x≥1, y≥1, z≥1, m≥1, n≥1, p≥1, q≥1, t≥1, s≥1, u≥1.
[0026] Preferably, the cap shell 105a is any one or any combination of copper, aluminum, silver, gold, chromium, nickel, carbon, titanium, stainless steel, copper tungsten, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, iron-clad copper, copper-clad iron.
[0027] Preferably, the density of the cap shell 105a is less than or equal to the density of the inner wall coating 105b of the cap; the density of the cap shell 105a is 5 - 10 g / cm3, and the density of the inner wall coating 105b of the cap is 9 - 15 g / cm3; the shear modulus of the cap shell 105a is greater than or equal to the shear modulus of the inner wall coating 105b of the cap; the shear modulus of the cap shell 105a is 40 - 60 GPa, and the density of the inner wall coating 105b of the cap is 30 - 55 GPa.
[0028] Preferably, the cap 105 with an isolation layer is the inner wall coating 105b of the copper cap shell 105a plated with a nickel isolation layer, the inner wall coating 105b of the copper cap shell 105a plated with a palladium isolation layer, the inner wall coating 105b of the copper cap shell 105a plated with a nickel / palladium isolation layer, the inner wall coating 105b of the copper cap shell 105a plated with a palladium / nickel isolation layer, the inner wall coating 105b of the copper cap shell 105a plated with a (palladium / nickel)x periodic structure isolation layer, the inner wall coating 105b of the copper cap shell 105a plated with a (nickel / palladium)y periodic structure isolation layer;
[0029] The cap with an isolation layer 105 has a nickel-plated isolation layer on the inner wall plating 105b of an iron cap shell 105a, a palladium-plated isolation layer on the inner wall plating 105b of an iron cap shell 105a, a nickel / palladium-plated isolation layer on the inner wall plating 105b of an iron cap shell 105a, a palladium / nickel-plated isolation layer on the inner wall plating 105b of an iron cap shell 105a, a (palladium / nickel) x-periodic structure isolation layer on the inner wall plating 105b of an iron cap shell 105a, a (nickel / palladium) y-periodic structure isolation layer on the inner wall plating 105b of an iron cap shell 105a;
[0030] The cap with an isolation layer 105 has a nickel-plated isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a palladium-plated isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a nickel / palladium-plated isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a palladium / nickel-plated isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a (palladium / nickel) x-periodic structure isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a (nickel / palladium) y-periodic structure isolation layer on the inner wall plating 105b of a copper / iron cap shell 105a, a nickel-plated isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a, a palladium-plated isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a, a nickel / palladium-plated isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a, a palladium / nickel-plated isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a, a (palladium / nickel) x-periodic structure isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a, a (nickel / palladium) y-periodic structure isolation layer on the inner wall plating 105b of an iron / copper cap shell 105a;
[0031] The cap with an isolation layer, the inner wall coating 105b of the iron-clad copper cap shell 105a is a nickel-plated isolation layer, a palladium-plated isolation layer, a nickel / palladium-plated isolation layer, a palladium / nickel-plated isolation layer, a (palladium / nickel)x periodic structure isolation layer, a (nickel / palladium)y periodic structure isolation layer; the inner wall coating 105b of the copper-clad iron cap shell 105a is a nickel-plated isolation layer, a palladium-plated isolation layer, a nickel / palladium-plated isolation layer, a palladium / nickel-plated isolation layer, a (palladium / nickel)x periodic structure isolation layer, a (nickel / palladium)y periodic structure isolation layer; the inner wall coating 105b of the copper-clad stainless steel cap shell 105a is a nickel-plated isolation layer, a palladium-plated isolation layer, a nickel / palladium-plated isolation layer, a palladium / nickel-plated isolation layer, a (palladium / nickel)x periodic structure isolation layer, a (nickel / palladium)y periodic structure isolation layer.
[0032] Preferably, the (palladium / nickel)x periodic structure isolation layer of the inner wall coating 105b of the cap includes a palladium / nickel / palladium / nickel x = 2 periodic structure, a palladium / nickel / palladium / nickel / palladium / nickel x = 3 periodic structure, a palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel x = 4 periodic structure, a palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel x = 5 periodic structure; the (nickel / palladium)y periodic structure isolation layer includes a nickel / palladium / nickel / palladium x = 2 periodic structure, a nickel / palladium / nickel / palladium / nickel / palladium x = 3 periodic structure, a nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium x = 4 periodic structure, a nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium / nickel / palladium x = 5 periodic structure.
[0033] Preferably, the thickness of the inner wall coating 105b of the cap is 5 nanometers to 5000 micrometers; the thickness of the cap shell 105a is 50 micrometers to 50 millimeters.
[0034] Preferably, the Poisson's ratio of the cap shell 105a is less than or equal to that of the coating on the inner wall of the cap; the Poisson's ratio of the cap shell 105a is 0.2 to 0.4, and the Poisson's ratio of the coating on the inner wall of the cap 105b is 0.3 to 0.5; the first ionization energy of the cap shell 105a is greater than or equal to that of the coating on the inner wall of the cap 105b; the first ionization energy of the cap shell 105a is 650 to 950 KJ / mol, and the first ionization energy of the coating on the inner wall of the cap 105b is 300 to 650 KJ / mol.
[0035] Preferably, the packaged component further includes a Zener diode 106;
[0036] The materials of the pin 102 and the header 101 include any one or any combination of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, copper tungsten, beryllium oxide, kovar, Mo, silicon, Nb, titanium, iron, copper / iron composite material, copper / aluminum composite material, and copper-clad iron.
[0037] The materials of the heat sink 103 include any one or any combination of silicon carbide, aluminum nitride, diamond, silicon, copper tungsten, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, and indium phosphide.
[0038] The laser 104 includes semiconductor lasers 104 such as gallium nitride-based lasers 104, gallium arsenide-based lasers 104, indium phosphide-based lasers 104, aluminum nitride-based lasers 104, and indium gallium nitride-based lasers 104, and the wavelength of the laser 104 covers 200 nm to 3000 nm.
[0039] The beneficial effects of this application compared with the prior art are as follows: An isolation layer is formed on the cap shell 105a to inhibit the precipitation of elements or impurity elements such as hydrogen atoms, oxygen atoms, H2 molecules, or O2 molecules in the material of the cap shell 105a, isolate the corrosion and oxidation of the end face of the laser 104 chip, inhibit packaging dead lights and optical catastrophic damage, and the ratio of packaging dead lights and aging dead lights decreases from 0.5 to 50% to 20 to 50 PPM.
[0040] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.
[0041] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.
[0042] The specific implementation manners of the present application described above do not constitute a limitation on the protection scope of the present application. Any other corresponding changes and deformations made according to the technical concept of the present application shall be included in the protection scope of the claims of the present application.
Claims
1. A semiconductor laser package, the packaging form including a plastic-sealed packaging component, a TO-CAN canned packaging component, and a COS packaging component. The laser packaging component includes pins, a header, a tongue, a cap, a heat sink, and a laser chip, and is characterized in that, The cap of the laser packaging component is a cap with an isolation layer; the cap includes a cap shell, a plating layer on the inner wall of the cap, and a lens.
2. The semiconductor laser package according to claim 1, characterized in that The plating layer on the inner wall of the cap is any one or any combination of a nickel isolation layer, a palladium isolation layer, a gold isolation layer, an iridium isolation layer, a silver isolation layer, a nickel / palladium isolation layer, a palladium / nickel isolation layer, a palladium / nickel x-periodic structure isolation layer, a nickel / palladium y-periodic structure isolation layer, a palladium / gold isolation layer, a palladium / silver isolation layer, a palladium / iridium isolation layer, a gold / palladium isolation layer, a silver / palladium isolation layer, an iridium / palladium isolation layer, a palladium / gold z-periodic structure isolation layer, a palladium / silver m-periodic structure isolation layer, a palladium / iridium n-periodic structure isolation layer, a (gold / palladium) p-periodic structure isolation layer, a silver / palladium q-periodic structure isolation layer, an iridium / palladium t-periodic structure isolation layer, a chromium isolation layer, a chromium / palladium isolation layer, a palladium / chromium isolation layer, a palladium / chromium s-periodic structure isolation layer, a chromium / palladium u-periodic structure isolation layer, where: x≥1, y≥1, z≥1, m≥1, n≥1, p≥1, q≥1, t≥1, s≥1, u≥1.
3. A semiconductor laser package according to any one of claims 1-2, characterized in that, The density of the cap shell is less than or equal to the density of the plating layer on the inner wall of the cap; the density of the cap shell is 5 - 10 g / cm3, and the density of the plating layer on the inner wall of the cap is 9 - 15 g / cm3; the shear modulus of the cap shell is greater than or equal to the shear modulus of the plating layer on the inner wall of the cap; the shear modulus of the cap shell is 40 - 60 GPa, and the density of the plating layer on the inner wall of the cap is 30 - 55 GPa.
4. A semiconductor laser package according to any one of claims 1-2, characterized in that, The cap with an isolation layer is a cap with a nickel isolation layer plated on the inner wall of a copper cap shell, a cap with a palladium isolation layer plated on the inner wall of a copper cap shell, a cap with a nickel / palladium isolation layer plated on the inner wall of a copper cap shell, a cap with a palladium / nickel isolation layer plated on the inner wall of a copper cap shell, a cap with a palladium / nickel x-periodic structure isolation layer plated on the inner wall of a copper cap shell, a cap with a nickel / palladium y-periodic structure isolation layer plated on the inner wall of a copper cap shell; The cap with an isolation layer is a cap with a nickel isolation layer plated on the inner wall of an iron cap shell, a cap with a palladium isolation layer plated on the inner wall of an iron cap shell, a cap with a nickel / palladium isolation layer plated on the inner wall of an iron cap shell, a cap with a palladium / nickel isolation layer plated on the inner wall of an iron cap shell, a cap with a palladium / nickel x-periodic structure isolation layer plated on the inner wall of an iron cap shell, a cap with a nickel / palladium y-periodic structure isolation layer plated on the inner wall of an iron cap shell; The cap with an isolation layer is a cap with a nickel isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a palladium isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a nickel / palladium isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a palladium / nickel isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a palladium / nickel x-periodic structure isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a nickel / palladium y-periodic structure isolation layer plated on the inner wall of a copper / iron cap shell, a cap with a nickel isolation layer plated on the inner wall of an iron / copper cap shell, a cap with a palladium isolation layer plated on the inner wall of an iron / copper cap shell, a cap with a nickel / palladium isolation layer plated on the inner wall of an iron / copper cap shell, a cap with a palladium / nickel isolation layer plated on the inner wall of an iron / copper cap shell, a cap with a palladium / nickel x-periodic structure isolation layer plated on the inner wall of an iron / copper cap shell, a cap with a nickel / palladium y-periodic structure isolation layer plated on the inner wall of an iron / copper cap shell; The isolation layer cap mentioned above has a nickel-plated isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a palladium-plated isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a palladium / nickel x-periodic structure isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a nickel / palladium y-periodic structure isolation layer on the inner wall of the cap with an iron-coated copper cap shell, a nickel-plated isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a palladium-plated isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a palladium / nickel x-periodic structure isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a nickel / palladium y-periodic structure isolation layer on the inner wall of the cap with a copper-coated iron cap shell, a nickel-plated isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell, a palladium-plated isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell, a nickel / palladium-plated isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell, a palladium / nickel-plated isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell, a palladium / nickel x-periodic structure isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell, a nickel / palladium y-periodic structure isolation layer on the inner wall of the cap with a copper-coated stainless steel cap shell.
5. The semiconductor laser package according to claim 2, characterized in that, The inner wall coating of the pipe cap is palladium / nickel x The periodic structure isolation layer includes a Pd / Ni / Pd / Ni periodic structure with x = 2, a Pd / Ni / Pd / Ni / Pd / Ni periodic structure with x = 3, a Pd / Ni / Pd / Ni / Pd / Ni / Pd / Ni periodic structure with x = 4, and a Pd / Ni / Pd / Ni / Pd / Ni / Pd / Ni / Pd / Ni periodic structure with x = 5; the Ni / Pd y-periodic structure isolation layer includes a Ni / Pd / Ni / Pd periodic structure with x = 2, a Ni / Pd / Ni / Pd / Ni / Pd periodic structure with x = 3, a Ni / Pd / Ni / Pd / Ni / Pd / Ni / Pd periodic structure with x = 4, and a Ni / Pd / Ni / Pd / Ni / Pd / Ni / Pd / Ni / Pd periodic structure with x = 5.
6. The semiconductor laser package according to claim 1, characterized in that, The thickness of the coating on the inner wall of the cap is 5 nanometers to 5000 micrometers; the thickness of the cap shell is 50 micrometers to 50 millimeters.
7. The semiconductor laser package according to claim 1, wherein The Mohs hardness of the cap shell is less than or equal to the Mohs hardness of the coating on the inner wall of the cap; the Mohs hardness of the cap shell is 2 to 4, and the Mohs hardness of the coating on the inner wall of the cap is 4 to 6; the Brinell hardness of the cap shell is less than or equal to the Brinell hardness of the coating on the inner wall of the cap; the Brinell hardness of the cap shell is 150 to 350, and the Mohs hardness of the coating on the inner wall of the cap is 250 to 500; the Vickers hardness of the cap shell is greater than or equal to the Vickers hardness of the coating on the inner wall of the cap; the Vickers hardness of the cap shell is 200 to 450, and the Vickers hardness of the coating on the inner wall of the cap is 50 to 250.
8. The semiconductor laser package according to claim 1, characterized in that, The Poisson's ratio of the cap shell is less than or equal to the Poisson's ratio of the coating on the inner wall of the cap; the Poisson's ratio of the cap shell is 0.2 to 0.4, and the Poisson's ratio of the coating on the inner wall of the cap is 0.3 to 0.5; the first ionization energy of the cap shell is greater than or equal to the first ionization energy of the coating on the inner wall of the cap; the first ionization energy of the cap shell is 650 to 950 KJ / mol, and the first ionization energy of the coating on the inner wall of the cap is 300 to 650 KJ / mol.
9. A semiconductor laser package according to claim 1, characterized in that, The encapsulated component further includes a Zener diode; The laser includes a gallium nitride-based laser, a gallium arsenide-based laser, an indium phosphide-based laser, an aluminum nitride-based laser, an indium gallium nitride-based laser, and the wavelength of the laser covers 200 nm to 3000 nm.