Vapor deposition coating equipment
The uniformity problem of thermal decomposition and coating nanosilicon material of silane thermal decomposition and coating is solved by uniform distribution of silane gas in the CVD reaction device, and the energy density of the battery and the silane decomposition efficiency are improved.
Patent Information
- Application Number
- CN202422297058.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-20
- Publication Date
- 2025-07-18
- Estimated Expiration
- 2034-09-20
AI Technical Summary
In the prior art, the coating uniformity of silane thermally decomposes to coat nanosilicon materials is not stable enough, which affects the improvement of battery energy density and the silane decomposition efficiency is affected.
The vapor deposition coating equipment is adopted, including a melting device, a CVD reaction device, an airflow stirrer and a collection tank. The raw materials are heated through the melting heater. The silane gas injected into the airflow stirrer is uniformly distributed in the CVD reaction device, which improves the silane decomposition efficiency and coating uniformity.
The uniformity of vapor deposition and silane decomposition efficiency are improved, and the prepared coated alloy powder has good consistency, which improves the battery energy density.
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Figure CN223118545U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of secondary batteries, in particular to a vapor deposition coating device. Background Art
[0002] Secondary batteries have been increasingly applied in the fields of electronic products, electric vehicles and energy storage. The mass energy density and volume energy density of batteries are particularly important for the use of electric vehicles and electronic products. And improving the battery energy density is mainly achieved by improving the energy density materials of the positive and negative electrodes to increase the energy density per unit mass and per unit volume.
[0003] The existing negative electrode materials of secondary lithium batteries and sodium batteries are mainly graphite and hard carbon, and among them, alloy materials such as silicon-carbon with high energy density are more widely used. For the preparation technology of silicon-carbon negative electrode materials, the vapor deposition method is an effective coating method. Usually, silane gas is introduced into a graphite material container, and at high temperature, silane thermally decomposes to generate nano-silicon coated on the material surface. In practice, the coating uniformity during the thermal decomposition of silane to coat nano-silicon materials will vary with the mixing uniformity of the materials and the equipment, resulting in unstable uniformity of vapor deposition and affecting the silane decomposition efficiency. And the above situation will also affect the improvement of battery energy density. Summary of the Utility Model
[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. For this purpose, the utility model provides a vapor deposition coating device.
[0005] According to the vapor deposition coating device of the utility model, it includes: a melting device which has a first cavity and is provided with a melting heater inside; a CVD reaction device which has a second cavity, the CVD reaction device is connected to the melting device through a diversion tube, the raw materials in the first cavity can enter the second cavity through the diversion tube, and the CVD reaction device is provided with a reaction heater; an air flow stirrer located inside the CVD reaction device, the air flow stirrer has a cavity as an air flow channel, the air flow stirrer is provided with an intake valve and an air outlet hole, the intake valve and the air outlet hole are connected to the air flow channel, and the air flow in the air flow channel can pass through the air outlet hole and enter the second cavity; a collection tank which has a third cavity, the collection tank is connected to the CVD reaction device through a collection tube, and the raw materials in the second cavity can enter the third cavity through the collection tube.
[0006] According to some embodiments of the utility model, a crucible is arranged inside the melting device, the crucible is connected to the diversion tube, and the melting heater is located on the outer side wall of the crucible.
[0007] According to some embodiments of the present utility model, an atomizing jet nozzle is provided inside the CVD reaction device, and the nozzle of the atomizing jet nozzle faces the output side position of the diversion tube.
[0008] According to some embodiments of the present utility model, the gas flow stirrer includes a stirring main shaft and stirring paddles. The gas flow channel is located inside the stirring main shaft and the stirring paddles. The intake valve is connected to the stirring main shaft, and the air outlet holes are located on the stirring paddles.
[0009] According to some embodiments of the present utility model, the gas flow stirrer is connected to a stirring motor, and the stirring motor is located outside the CVD reaction device.
[0010] According to some embodiments of the present utility model, an air outlet valve is provided on the CVD reaction device, and the air outlet valve can discharge the excess air in the second cavity.
[0011] According to some embodiments of the present utility model, the reaction heater includes a heat-insulating layer and a reaction heating coil. The heat-insulating layer is located on the outer side wall of the CVD reaction device, and the reaction heating coil is located inside the heat-insulating layer. The reaction heating coil surrounds the CVD reaction device.
[0012] According to some embodiments of the present utility model, observation holes are provided on both the melting device and the collection tank.
[0013] According to some embodiments of the present utility model, vacuum valves and gas injection valves are provided on both the melting device and the collection tank. The vacuum valves can be connected to a pumping device to evacuate the first cavity and the third cavity, and the gas injection valves can be externally connected to a gas source to inject a protective gas into the first cavity and the third cavity.
[0014] According to some embodiments of the present utility model, the melting device, the CVD reaction device, and the collection tank are arranged and distributed in order from top to bottom.
[0015] The chemical vapor deposition coating equipment according to the embodiments of the present utility model has at least the following technical effects: The raw materials are melted by the melting heater in the melting device, and the melted raw materials are directly injected into the CVD reaction device. The silane gas injected by the gas flow stirrer as a pyrolysis gas can be ejected from the air outlet holes and evenly distributed in the CVD reaction device. The gas flow stirrer enables the pyrolysis gas introduced into the CVD reaction device to be more evenly distributed in the CVD reactor, and improves the uniformity of chemical vapor deposition and the utilization rate of the pyrolysis gas, making the coated alloy powder more consistent during preparation, making the uniformity of chemical vapor deposition more stable, and having a higher silane decomposition efficiency. Furthermore, it improves the battery energy density and has good application value.
[0016] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of the present utility model. Description of the Drawings
[0017] The additional aspects and advantages of the present utility model will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, wherein:
[0018] Figure 1 is a perspective view of the vapor deposition coating equipment of the present utility model;
[0019] Figure 2 is a perspective sectional view of the vapor deposition coating equipment of the present utility model;
[0020] Figure 3 is a perspective view of the air flow stirrer in the present utility model;
[0021] Figure 4 is a perspective sectional view of the melting device in the present utility model;
[0022] Figure 5 is a perspective sectional view of the CVD reaction device in the present utility model.
[0023] Reference Signs:
[0024] Melting device 100, first cavity 101, melting tank body 110, melting tank cover 120, melting heater 130, crucible 140; CVD reaction device 200, second cavity 201, diversion pipe 210, collection pipe 220, reaction heater 230, heat insulation layer 231, reaction heating coil 232, atomizing jet nozzle 240, air outlet valve 250; air flow stirrer 300, air flow channel 301, stirring main shaft 310, intake valve 311, stirring paddle 320, air outlet hole 321, stirring motor 330; collection tank 400, third cavity 401, collection tank body 410, collection tank cover 420; observation hole 500, vacuum valve 600, gas injection valve 700. Detailed Description of the Embodiments
[0025] Embodiments of the present utility model will be described in detail below. Examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for explaining the present utility model and should not be construed as limiting the present utility model.
[0026] In the description of the present utility model, it should be understood that when it comes to orientation descriptions, such as the orientations or positional relationships indicated by up, down, front, back, left, right, etc., they are based on the orientations or positional relationships shown in the drawings. This is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present utility model.
[0027] In the description of the present utility model, the meaning of "a plurality" is more than two, and understandings such as greater than, less than, exceeding, etc. do not include the present number. If there is a description of first and second, it is only for the purpose of distinguishing technical features and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features or implicitly specifying the sequence relationship of the indicated technical features.
[0028] In the description of the present utility model, unless otherwise clearly defined, words such as setting, installing, connecting, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in the present utility model in combination with the specific content of the technical solution.
[0029] Next, refer to Figure 1 and Figure 2 to describe the vapor deposition coating equipment according to an embodiment of the present utility model.
[0030] As Figure 1 and Figure 2 shown, the vapor deposition coating equipment according to an embodiment of the present utility model includes a melting device 100, a CVD reaction device 200, an air flow stirrer 300, and a collection tank 400.
[0031] The melting device 100 has a first cavity 101, and a melting heater 130 is arranged in the melting device 100; the CVD reaction device 200 has a second cavity 201, and the CVD reaction device 200 is communicated with the melting device 100 through a diversion pipe 210. The raw material in the first cavity 101 can enter the second cavity 201 through the diversion pipe 210, and a reaction heater 230 is arranged on the CVD reaction device 200; referring to Figure 2 , Figure 3 , the air flow stirrer 300 is located in the CVD reaction device 200. The air flow stirrer 300 has a cavity as an air flow channel 301, and an intake valve 311 and an air outlet hole 321 are arranged on the air flow stirrer 300. The intake valve 311, the air outlet hole 321 and the air flow channel 301 are communicated. The air flow in the air flow channel 301 can pass through the air outlet hole 321 and enter the second cavity 201; the collection tank 400 has a third cavity 401, and the collection tank 400 is communicated with the CVD reaction device 200 through a collection pipe 220. The raw material in the second cavity 201 can enter the third cavity 401 through the collection pipe 220.
[0032] For example, as Figure 1 and Figure 2 shown, the melting device 100 has a first cavity 101. A melting heater 130 is provided inside the melting device 100, and the raw material is heated by the melting heater 130 inside the melting device 100.
[0033] The CVD reaction device 200 has a second cavity 201. The CVD reaction device 200 is connected to the melting device 100 through a diversion pipe 210, so that the raw material heated in the melting device 100 can enter the CVD reaction device 200. A reaction heater 230 is provided on the CVD reaction device 200 for heating inside the CVD reaction device 200. Referring to Figure 2 、 Figure 3 , the gas flow stirrer 300 is located inside the CVD reaction device 200. The gas flow stirrer 300 has a cavity as a gas flow channel 301. An intake valve 311 and an air outlet hole 321 are provided on the gas flow stirrer 300. The intake valve 311, the air outlet hole 321 are communicated with the gas flow channel 301. In this way, the silane gas can enter the gas flow channel 301 from the intake valve 311 and be output from the air outlet hole 321. The gas flow stirrer 300 outputs the silane gas into the CVD reaction device 200 while stirring, so that the silane gas and the raw material can be more fully contacted, and the coating uniformity when the silane thermally decomposes and coats the raw material is improved.
[0034] The collection tank 400 has a third cavity 401. The collection tank 400 is connected to the CVD reaction device 200 through a collection pipe 220, so that the raw material after the reaction in the CVD reaction device 200 can enter the collection tank 400 for collection.
[0035] During actual operation, referring to Figure 4 , the raw material is melted after being heated by the melting heater 130 inside the melting device 100. The melted raw material is directly injected into the CVD reaction device 200. The silane gas injected through the intake valve 311 in the gas flow stirrer 300 can be output from the air outlet hole 321 to the CVD reaction device 200 as a pyrolysis gas and be evenly distributed inside the CVD reaction device 200. The gas flow stirrer 300 outputs the silane gas into the CVD reaction device 200 while stirring, so that the silane gas and the raw material can be more fully contacted, and the coating uniformity when the silane thermally decomposes and coats the raw material is improved. The raw material after the reaction in the CVD reaction device 200 enters the collection tank 400 for collection.
[0036] Through the above treatment method, the uniformity of chemical vapor deposition and the utilization rate of the pyrolysis gas can be improved, and the obtained coated alloy powder has good consistency and good application value.
[0037] The time when the raw materials of the melting device 100 enter the CVD reaction device 200, the time when the gas flow agitator 300 performs stirring, and the time when the gas flow agitator 300 outputs silane gas into the CVD reaction device 200 can all be adjusted as needed.
[0038] In some embodiments of the present invention, the raw materials in the melting device 100 are heated and melted by a melting heater 130 built into the melting device 100 .
[0039] In some embodiments of the present invention, referring to Figure 4 The melting device 100 is provided with a crucible 140, the crucible 140 is connected to the flow guide tube 210, and the melting heater 130 is located on the outer wall of the crucible 140. The raw materials are placed in the crucible 140 and heated by the melting heater 130. The heat generated by the melting heater 130 is concentrated in the melting device 100, thereby improving the heating efficiency of the raw materials.
[0040] In some embodiments of the present invention, an atomizing air nozzle 240 is provided in the CVD reaction device 200, and the nozzle of the atomizing air nozzle 240 faces the output side position of the guide tube 210. The atomizing air nozzle 240 can spray high-pressure inert gas, such as argon. When the molten raw material in the melting device 100 enters the CVD reaction device 200 through the guide tube 210, the raw material is broken into micron-sized alloy powder particles under the action of the airflow ejected by the atomizing air nozzle 240, so that the raw material entering the CVD reaction device 200 can be more evenly distributed and more fully contacted with the silane gas in the CVD reaction device 200.
[0041] In some embodiments of the present invention, referring to Figure 3 , Figure 5 The air flow agitator 300 includes a stirring main shaft 310 and a stirring paddle 320. The air flow channel 301 is located in the stirring main shaft 310 and the stirring paddle 320. The air inlet valve 311 is connected to the stirring main shaft 310, and the air outlet 321 is located on the stirring paddle 320. The rotation of the stirring main shaft 310 drives the stirring paddle 320 to rotate, and the air outlet 321 on the stirring paddle 320 also rotates and stirs while supplying gas to the inner cavity of the CVD reaction device 200, further improving the uniformity of the contact between the silane gas and the raw material.
[0042] In some embodiments of the present invention, the air flow stirrer 300 is connected to a stirring motor 330, and the stirring motor 330 is located outside the CVD reaction device 200. The stirring motor 330 is used to drive the air flow stirrer 300 to move for stirring. The stirring motor 330 is located outside the CVD reaction device 200, which is more convenient for management and improves safety.
[0043] In some embodiments of the present utility model, an air outlet valve 250 is provided on the CVD reaction device 200. The air outlet valve 250 can release the excess air in the second cavity 201, and the air is released through the air outlet valve 250 to discharge the gas generated during the reaction inside the CVD reaction device 200. For example, silane gas will generate silicon and hydrogen during the decomposition process. Among them, hydrogen is a by-product generated during the above reaction process and is also a dangerous and explosive gas, which needs to be discharged in time by the air outlet valve 250 to maintain normal reaction.
[0044] In some embodiments of the present utility model, the reaction heater 230 includes a heat insulation layer 231 and a reaction heating coil 232. The heat insulation layer 231 is located on the outer side wall of the CVD reaction device 200, and the reaction heating coil 232 is located inside the heat insulation layer 231. The reaction heating coil 232 surrounds the CVD reaction device 200, so as to ensure that the heat generated by the reaction heater 230 can be more concentrated inside the CVD reaction device 200 and also play a role in protecting the reaction heating coil 232.
[0045] In some embodiments of the present utility model, referring to Figure 1 、 Figure 2 Observation holes 500 are provided on both the melting device 100 and the collection tank 400, which is convenient for observing the working conditions inside the melting device 100 and the collection tank 400.
[0046] In some embodiments of the present utility model, vacuum valves 600 and gas injection valves 700 are provided on both the melting device 100 and the collection tank 400. The vacuum valve 600 can connect to a pumping device to evacuate the first cavity 101 and the third cavity 401, and the gas injection valve 700 can connect to an external gas source to inject a protective gas into the first cavity 101 and the third cavity 401. Among them, the vacuum valve 600 is responsible for evacuating the melting device 100 and the collection tank 400, and the gas injection valve 700 is responsible for injecting a protective inert gas, such as argon, into the melting device 100 and the collection tank 400. In this way, it is ensured that the raw materials during the reaction process are not contaminated and the reaction effect is guaranteed.
[0047] In some embodiments of the present utility model, the melting device 100, the CVD reaction device 200, and the collection tank 400 are arranged and distributed in order from top to bottom.
[0048] In some embodiments of the present utility model, referring to Figure 2 、 Figure 3 The stirring main shaft 310 of the air flow stirrer 300 is arranged in the horizontal direction. The stirring paddles 320 are distributed around the outer side wall of the stirring main shaft 310.
[0049] In some embodiments of the present utility model, referring to Figure 1 、 Figure 2, the melting device 100 includes a melting tank body 110 and a melting tank cover 120. The melting tank cover 120 covers the melting tank body 110. After the melting tank cover 120 is opened, raw materials can be added to the melting tank body 110.
[0050] In some specific embodiments of the present invention, the diversion pipe 210, the crucible 140 are connected to the melting tank body 110.
[0051] In some specific embodiments of the present invention, the observation hole 500 on the melting device 100 is located on the melting tank body 110.
[0052] In some specific embodiments of the present invention, the vacuum valve 600 and the gas injection valve 700 on the melting device 100 are connected to the melting tank cover 120.
[0053] In some embodiments of the present invention, the collection tank 400 includes a collection tank body 410 and a collection tank cover 420. The collection tank cover 420 covers the collection tank body 410. After the collection tank cover 420 is opened, the raw materials in the collection tank body 410 can be taken away.
[0054] In some specific embodiments of the present invention, the collection pipe 220 is connected to the collection tank cover 420.
[0055] In some specific embodiments of the present invention, the observation hole 500 on the collection tank 400 is located on the collection tank body 410.
[0056] In some specific embodiments of the present invention, the vacuum valve 600 and the gas injection valve 700 on the collection tank 400 are connected to the collection tank cover 420.
[0057] Other components and operations of the coating equipment according to the embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail here.
[0058] Next, refer to Figure 1 and Figure 2 A specific embodiment is used to describe in detail the chemical vapor deposition coating equipment according to the embodiments of the present invention. It should be understood that the following description is only an exemplary illustration and not a specific limitation of the invention.
[0059] As Figure 1 and Figure 2 shown, the chemical vapor deposition coating equipment according to the embodiments of the present invention includes a melting device 100, a CVD reaction device 200, an air flow stirrer 300, and a collection tank 400.
[0060] The melting device 100, the CVD reaction device 200, and the collection tank 400 are arranged and distributed in order from top to bottom to form a vertical structure.
[0061] The melting device 100 includes a melting tank body 110, a melting tank cover 120, a melting heater 130, and a crucible 140. The melting tank body 110 is provided with an observation hole 500, and the melting tank cover 120 is provided with a vacuum valve 600 and a gas injection valve 700.
[0062] The CVD reaction device 200 is connected to the melting device 100 and the collecting tank 400 through the guide pipe 210 and the collecting pipe 220. The CVD reaction device 200 is provided with a reaction heater 230, an atomizing air nozzle 240, and an air outlet valve 250. The reaction heater 230 includes a heat insulation layer 231 and a reaction heating coil 232.
[0063] The air flow stirrer 300 has an air flow channel 301, and includes a stirring main shaft 310 and a stirring paddle 320. The stirring main shaft 310 is provided with an air inlet valve 311, and the stirring paddle 320 is provided with an air outlet 321. The stirring motor 330 controls the air flow stirrer 300 to rotate and stir.
[0064] The collecting tank 400 includes a collecting tank body 410 and a collecting tank cover 420. The collecting tank body 410 is provided with an observation hole 500, and the collecting tank cover 420 is provided with a vacuum valve 600 and an air injection valve 700.
[0065] In some embodiments of the present invention, amorphous silicon-coated tin alloy powder is prepared by placing a metal tin block, a silicon block, and a cobalt block as raw materials in a mass ratio of 85:2:18 in a crucible 140 .
[0066] In some embodiments of the present invention, metal tin blocks, silicon blocks, and cobalt blocks are placed in a crucible 140 as raw materials at a mass ratio of 70:10:20. The gas inlet valve 311 connected to the CVD reaction device 200 is opened to introduce 99.99% silane gas and 99.99% acetylene gas (volume ratio 60:40) to prepare amorphous silicon-carbon coated tin alloy powder.
[0067] In actual operation, the raw materials are placed in the crucible 140, the melting pot cover 120 is closed, and the vacuum valve 600 of the melting device 100 is opened to evacuate the melting device 100. After evacuating for 5 minutes, the vacuum valve 600 is closed, and the gas injection valve 700 of the melting device 100 is opened to introduce 99.99% argon gas to one atmosphere, and then the gas injection valve 700 is closed. The melting heater 130 is turned on and heated to 1500°C, and the glass is released through the observation hole on the side wall of the melting device 100, and the block metal in the crucible 140 is completely dissolved.
[0068] Open the intake valve 311 connected to the CVD reaction device 200 and introduce 99.99% argon gas. Open the outlet valve 250 to displace the air in the CVD reaction device 200 for 10 minutes, and then close the outlet valve 250 and the intake valve 311. Turn on the reaction heating coil 232 until the temperature in the CVD reaction device 200 reaches 500 °C. Turn on the gas flow stirrer 300, and then open the intake valve 311 to introduce 99.99% silane gas. Open the diversion tube 210 and the atomizing nozzle 240 connected to the gas flow stirrer 300. The molten alloy liquid in the crucible 140 passes through the diversion tube 210 connected to the crucible 140 and is sprayed into micron-sized alloy powder particles under the action of the high-pressure inert argon gas flow of the atomizing nozzle 240 and enters the CVD reaction device 200. Silane decomposes into amorphous silicon and hydrogen at 500 °C in the CVD reaction device 200. The amorphous silicon produced by decomposition uniformly coats the surface of the alloy powder particles. By controlling the reaction time, alloy powders with different coating thicknesses can be prepared. During the reaction, open the outlet valve 250 to discharge some gas from the CVD reaction device 200 to maintain a constant pressure in the CVD reaction device 200.
[0069] After the reaction is completed, close the intake valve 311 and the outlet valve 250. Turn off the reaction heating coil 232 and keep the gas flow stirrer 300 stirring while cooling the CVD reaction device 200 to room temperature. Stop stirring after the CVD reaction device 200 is cooled to room temperature. Open the vacuum valve 600 connected to the collection tank 400 to evacuate and then close the valve. Open the intake valve 311 connected to the vacuum valve 600 and introduce 99.99% argon gas. Under the protection of the argon gas atmosphere, open the outlet valve connected to the CVD reaction device 200 and the collection tank 400 to introduce the coated alloy powder produced by the reaction into the collection tank 400, and then close the outlet valve and the intake valve 311 connected to the vacuum valve 600. The production is completed.
[0070] The prepared amorphous silicon-coated tin alloy powder can be further processed to obtain a high-capacity silicon-coated tin alloy anode material powder.
[0071] According to the gas-phase deposition coating equipment of the embodiments of the present utility model, by setting it in this way, at least the following effects can be achieved. The raw materials are melted in the melting device 100 after being heated by the melting heater 130. The melted raw materials are directly injected into the CVD reaction device 200. The silane gas injected through the intake valve 311 in the gas flow stirrer 300 can be ejected from the air outlet hole 321 as the pyrolysis gas and evenly distributed in the CVD reaction device 200. The raw materials that have completed the reaction in the CVD reaction device 200 enter the collection tank 400 for collection. The prepared coated alloy powder has good consistency and has good application value. The gas flow stirrer 300 ejects the silane gas while stirring, enabling the silane gas to come into more sufficient contact with the raw materials and improving the coating uniformity when the silane thermally decomposes to coat the raw materials. When the molten raw materials in the melting device 100 enter the CVD reaction device 200 through the diversion pipe 210, under the action of the gas flow ejected by the atomizing nozzle 240, the raw materials are broken up into micron-sized alloy powder particles, so that the raw materials entering the CVD reaction device 200 can be more evenly distributed and come into more sufficient contact with the silane gas in the CVD reaction device 200.
[0072] In the description of this specification, the description with reference to the terms "some embodiments" or "it is conceivable that", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0073] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and purposes of the present utility model. The scope of the present utility model is defined by the claims and their equivalents.
Claims
1. A vapor deposition coating device, characterized in that, Including: A melting device (100), the melting device (100) having a first cavity (101), and a melting heater (130) being provided inside the melting device (100); A CVD reaction device (200), the CVD reaction device (200) having a second cavity (201), the CVD reaction device (200) being connected to the melting device (100) through a diversion tube (210), raw materials inside the first cavity (101) being able to enter the second cavity (201) through the diversion tube (210), and a reaction heater (230) being provided on the CVD reaction device (200); An air flow stirrer (300), located inside the CVD reaction device (200), the air flow stirrer (300) having a cavity as an air flow channel (301), an intake valve (311) and an air outlet hole (321) being provided on the air flow stirrer (300), the intake valve (311), the air outlet hole (321) being connected to the air flow channel (301), and the air flow inside the air flow channel (301) being able to pass through the air outlet hole (321) and enter the second cavity (201); A collection tank (400), the collection tank (400) having a third cavity (401), the collection tank (400) being connected to the CVD reaction device (200) through a collection tube (220), and raw materials inside the second cavity (201) being able to enter the third cavity (401) through the collection tube (220).
2. The vapor deposition coating equipment according to claim 1, wherein A crucible (140) is provided inside the melting device (100), the crucible (140) being connected to the diversion tube (210), and the melting heater (130) being located on the outer side wall of the crucible (140).
3. The vapor deposition coating equipment according to claim 1, characterized in that, An atomizing spray nozzle (240) is provided inside the CVD reaction device (200), and the spray opening of the atomizing spray nozzle (240) faces the output side position of the diversion tube (210).
4. The vapor deposition coating equipment according to claim 1, characterized in that, The air flow stirrer (300) includes a stirring main shaft (310) and stirring paddles (320), the air flow channel (301) being located inside the stirring main shaft (310) and the stirring paddles (320), the intake valve (311) being connected to the stirring main shaft (310), and the air outlet hole (321) being located on the stirring paddles (320).
5. The vapor deposition coating equipment according to claim 1 or 4, characterized in that, The air flow stirrer (300) is connected to a stirring motor (330), and the stirring motor (330) is located outside the CVD reaction device (200).
6. The vapor deposition coating equipment according to claim 1, characterized in that, An air outlet valve (250) is provided on the CVD reaction device (200), and the air outlet valve (250) can discharge the excess air inside the second cavity (201).
7. The gas-phase deposition coating equipment according to claim 1, characterized in that, The reaction heater (230) includes a heat preservation and heat insulation layer (231) and a reaction heating coil (232), the heat preservation and heat insulation layer (231) being located on the outer side wall of the CVD reaction device (200), the reaction heating coil (232) being located inside the heat preservation and heat insulation layer (231), and the reaction heating coil (232) surrounding the CVD reaction device (200).
8. The vapor deposition coating equipment according to claim 1, characterized in that, Observation holes (500) are provided on both the melting device (100) and the collection tank (400).
9. The vapor deposition coating equipment according to claim 1, characterized in that Vacuum valves (600) and gas injection valves (700) are provided on both the melting device (100) and the collection tank (400). The vacuum valves (600) can be connected to a pumping device to evacuate the first cavity (101) and the third cavity (401), and the gas injection valves (700) can be externally connected to a gas source to inject a protective gas into the first cavity (101) and the third cavity (401).
10. The vapor deposition coating equipment according to claim 1, characterized in that, The melting device, the CVD reaction device (200), and the collection tank (400) are arranged and distributed in order from top to bottom.
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