Deposition apparatus

Abstract

The utility model discloses a deposition apparatus. The deposition equipment comprises an equipment main body, a slide glass boat and an infrared heater. The equipment body is provided with a process cavity. The slide glass boat is arranged in the process cavity, the slide glass boat is provided with an accommodating cavity for accommodating a substrate, and at least one surface of the substrate is covered by the slide glass boat; the infrared heater is opposite to one surface of the slide glass boat and is arranged at an interval, a process channel for process gas to flow through is arranged between the infrared heater and the slide glass boat, and the infrared heater is used for heating the uncovered side surface of the substrate. In this way, the side face, needing to be coated, of the substrate can be heated in a targeted mode.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to deposition equipment. Background Art

[0002] In the semiconductor field, a whole substrate can be cut into half pieces or multiple small substrate pieces. There are serious surface defects on the cut surface, and surface treatment is required to reduce the charge recombination on the cut surface. In related technologies, the surface defects after cutting are improved by heating the stacked substrates and then coating them for passivation. However, the related equipment heats the entire substrate. If the cut surface needs to be heated to the process temperature, a long preheating and heat conduction process is required. Summary of the Utility Model

[0003] Embodiments of this application provide deposition equipment that can achieve targeted heating of the side of the substrate that needs to be coated.

[0004] Embodiments of this application provide a deposition equipment. The deposition equipment includes a device main body, a wafer boat, and an infrared heater. The device main body has a process chamber. The wafer boat is disposed in the process chamber. The wafer boat has a receiving cavity for receiving the substrate, and the wafer boat covers at least one side of the substrate. The infrared heater is disposed opposite to and spaced from one side of the wafer boat. There is a process channel for the process gas to flow between the infrared heater and the wafer boat, and the infrared heater is used to heat the unmasked side of the substrate.

[0005] Optionally, the deposition equipment further includes a carrier. The carrier has an installation cavity. The carrier is detachably installed in the process chamber. The wafer boat is disposed in the installation cavity, and the infrared heater is installed on the carrier.

[0006] Optionally, the substrates in the wafer boat are stacked, and the sides of the stacked substrates to be coated are exposed to the process channel, and the other sides of the stacked substrates are covered by the wafer boat.

[0007] Optionally, there are multiple carriers disposed in the process chamber, and the process channels are in parallel or in series;

[0008] Alternatively, there are multiple wafer boats disposed in the installation cavity. The infrared heaters respectively form process channels with the wafer boats, and the process channels are in parallel or in series.

[0009] Optionally, the wafer boat is detachably installed in the process chamber, and the infrared heater is installed in the process chamber.

[0010] Optionally, there are multiple wafer boats disposed in the installation cavity. Multiple infrared heaters respectively form process channels with the wafer boats, and the process channels are in parallel or in series.

[0011] Optionally, a plurality of infrared heaters are arranged at intervals in the process chamber, and an installation cavity for installing the wafer boat is formed between the infrared heaters at intervals; the wafer boat is detachably installed in the installation cavity.

[0012] Optionally, the deposition equipment further includes a spray plate and a negative pressure pump, and the spray plate and the negative pressure pump are respectively communicated with the process channel.

[0013] Optionally, the deposition equipment further includes a door body, and the spray plate is arranged on the door body and is correspondingly arranged with the process channel when the door body is closed.

[0014] Optionally, the deposition equipment further includes a cavity heating element, and the cavity heating element is installed on the equipment main body for heating the process chamber.

[0015] The beneficial effects of the present application are as follows: Different from the prior art, by arranging the infrared heater to face one side of the wafer boat, the surface of the substrate that needs to be coated can be heated specifically by the infrared heater. The process channel formed by the infrared heater and the wafer boat can allow the process gas to flow through directly to the part of the substrate that needs to be coated, and reduce the flow of the process gas through other positions, thereby reducing the consumption of the process gas. Further, the infrared heater heats by infrared rays, and the area directly irradiated by the infrared rays has a higher heating rate, while the heating rate of the area not irradiated by the infrared rays is lower, so that the deposition equipment can well meet the annealing requirements and reduce the adhesion caused by heating on the surface of the substrate that does not need to be coated. Description of the Drawings

[0016] Figure 1 is a schematic structural diagram of the deposition equipment of the present application;

[0017] Figure 2 is a schematic structural diagram of a specific embodiment of the deposition equipment of the present application;

[0018] Figure 3 is Figure 2 an exploded structural diagram of the carrier shown in;

[0019] Figure 4 is Figure 2 a cross-sectional structural diagram of the deposition equipment in;

[0020] Figure 5 is a schematic structural diagram of another specific embodiment of the deposition equipment of the present application;

[0021] Figure 6 is Figure 5 a cross-sectional structural diagram of the deposition equipment shown in;

[0022] Figure 7 is a schematic flow diagram of the substrate passivation method of the present application.

[0023] Reference Signs:

[0024] Deposition equipment, 1; Equipment main body, 11; Door body, 12; Spraying plate, 121; Carrier, 13; Installation cavity, 14; Wafer boat, 15; Infrared heater, 16; Process channel, 17; Negative pressure pump, 18; Cavity heating element, 19. Specific embodiments

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0026] In the semiconductor field, a whole wafer can be cut into half wafers or multiple small wafers. Severe surface defects exist on the cut surface, and surface treatment is required to reduce charge recombination on the cut surface. In related technologies, the surface of the wafer after cutting can be passivated to improve the performance of the wafer. The requirement for passivation is to deposit a passivation film on the cut surface or edge, and this film needs to be annealed at a relatively high temperature, and cannot be heated for a long time to avoid the temperature of the center of the wafer rising too high and causing the wafers to stick together. Ordinary heating annealing has a slow heating rate and cannot meet the requirement of high temperature at the edge and low temperature at the center. When using an infrared heater, during the film coating process, the surface of the infrared heater is coated with a film, resulting in a problem of reduced efficiency of the infrared heater. In related technologies, a solution of separating the film coating cavity and the annealing cavity is adopted. This solution has a complex structure, high cost, and a possible pollution problem. Moreover, an annealing cavity and a handling mechanism need to be added, and it is difficult to ensure that the film coating and annealing are carried out under vacuum, which increases the possibility of wafer contamination during the handling process. To improve the above technical problems, the present application can provide the following embodiments.

[0027] Combined with Figure 1 , an embodiment of the present application provides a deposition equipment 1. The deposition equipment 1 includes an equipment main body 11, a wafer boat 15, and an infrared heater 16. The equipment main body 11 has a process cavity. The process cavity can be used to place the wafer boat 15 and the infrared heater 16. The process cavity can isolate the internal components from the air, thereby reducing the pollution of the film coating by the air.

[0028] The wafer boat 15 is disposed in the process chamber, and the wafer boat 15 has a receiving cavity for receiving the substrate. On the one hand, the wafer boat 15 allows at least one side of the substrate that needs to be coated to be exposed. On the other hand, the wafer boat 15 covers at least one side of the substrate. In addition to carrying the substrate, the wafer boat 15 can also selectively expose the surface of the substrate that needs to be coated and cover the surface of the substrate that does not need to be coated, so that the surface that needs to be coated can contact the process gas, and the surface that needs to be coated can be heated to a sufficient temperature by the infrared heater 16. At the same time, it can also reduce the contact between the surface that does not need to be coated and the process gas, and reduce the part of the substrate that does not need to be coated from being heated to a relatively high temperature by the infrared heater 16.

[0029] The infrared heater 16 is disposed opposite to and spaced from at least one side of the wafer boat 15. The infrared heater 16 is used to heat the side surface of the substrate that is not covered. Since the infrared heater 16 heats the substrate by infrared rays, it has a relatively high heating efficiency for the surface that can be directly irradiated by infrared rays and a relatively low heating efficiency for the surface that cannot be directly irradiated by infrared rays. By arranging the infrared heater 16 opposite to the wafer boat 15, the surface of the substrate opposite to the infrared heater 16 can be quickly heated to meet the process requirements, and the heating rate of the surface of the substrate covered by the wafer boat 15 or due to stacking is reduced, thereby reducing the adhesion of the substrate caused by high temperature under the condition of meeting the passivation of the substrate cutting surface. On the other hand, due to the aforementioned good local heating performance of the infrared heater 16, the infrared heater 16 can be conveniently used to anneal the coated substrate.

[0030] The deposition device 1 proposed in the embodiment of the present application, by arranging the infrared heater 16, on the one hand, can coat the cutting surface of the substrate, and on the other hand, can anneal the coated substrate. That is to say, the deposition device 1 of the present application has the functions of coating and annealing the substrate at the same time, which can reduce the complex structure required for the transfer of the substrate from the coating chamber to the annealing chamber in the related art and various possible contaminations. For the problem that the efficiency of the infrared heater 16 decreases due to coating on the surface of the infrared heater 16, it can be improved by the subsequent passivation method, by continuously heating the infrared heater 16 to a certain temperature to promote the decomposition of the surface source, and specific details can be seen in the following description.

[0031] There is a process channel 17 for the process gas to flow through between the infrared heater 16 and the wafer boat 15. The process gas can directly flow through the surface of the substrate that needs to be coated through the process channel 17, and the flow of the process gas in other directions can be blocked by the infrared heater 16 or the wafer boat 15. In this way, the consumption of the process gas can be reduced, and the disordered flow of the process gas can be reduced.

[0032] Combined Figures 2 to 4, in some embodiments, the deposition apparatus 1 further includes a carrier 13. The carrier 13 has a mounting cavity 14. The carrier 13 is detachably mounted in the process chamber. The wafer boat 15 is disposed in the mounting cavity 14, and the infrared heater 16 is mounted on the carrier 13. In this embodiment, the wafer boat 15 is indirectly placed in the process chamber through the carrier 13. The carrier 13 can be detached from the deposition apparatus 1 alone. Then, the wafer boat 15 can be detached outside the deposition apparatus 1. By the above method, the taking and placing of the wafer boat 15 can be facilitated. In some embodiments, an electrode feeding assembly is disposed in the process chamber, and an electrode feeding portion electrically connected to the infrared heater 16 is disposed on the carrier 13. When the carrier 13 is mounted in the process chamber, the electrode feeding assembly can feed current into the infrared heater 16.

[0033] In some embodiments, the substrates in the wafer boat 15 are stacked, and the side of the stacked substrates to be coated is exposed to the process channel 17, and the other surfaces of the stacked substrates are covered by the wafer boat 15. The cut surfaces of the stacked substrates need to be passivated, and the other surfaces of the substrates do not need to be coated. In the case where process gas may also flow through the other surfaces, unwanted coating is likely to occur, such as overcoating or the atomic layer deposition coating that should originally be converted into chemical vapor deposition coating. By providing the wafer boat 15, on the one hand, the cut surfaces of the substrates that need to be coated can be exposed. On the other hand, the surfaces of the substrates that do not need to be coated can be covered, thereby reducing the flow of process gas through the surfaces of the substrates that do not need to be coated and improving the technical problem of possible overcoating.

[0034] In some embodiments, a plurality of carriers 13 are disposed in the process chamber, and the process channels 17 are in parallel or in series. A plurality of carriers 13 can be provided in the same deposition apparatus 1, so as to passivate a plurality of wafer boats 15 and multiple sets of stacked substrates at the same time. Among them, the process channels 17 in the carrier 13 can be in series. The process gas can sequentially pass through the process channels 17 in the direction of the arrangement of the carriers 13. The process channels 17 in the carrier 13 can be in parallel. The process gas can enter the carriers 13 simultaneously and respectively. Optionally, part of the process channels 17 of the carrier 13 are in series and part are in parallel.

[0035] Alternatively, a plurality of susceptor boats 15 are provided in the installation cavity 14, and the infrared heaters 16 respectively form process channels 17 with the susceptor boats 15, and the process channels 17 are in parallel or series connection. A plurality of susceptor boats 15 can be provided in the same carrier 13, so that multiple groups of stacked substrates can be passivated through one carrier 13 at the same time. Among them, the process channels 17 formed by the susceptor boats 15 and the infrared heaters 16 can be in series connection. For example, the process gas can sequentially pass through the process channels 17 in the direction of the arrangement of the susceptor boats 15. For example, a plurality of infrared heaters 16 and a plurality of susceptor boats 15 correspond to each other to form a plurality of process channels 17, and the process gas sequentially passes through the process channels 17. Another example is that the same infrared heater 16 can be provided corresponding to a plurality of susceptor boats 15, and the susceptor boats 15 can be arranged on the same side of the infrared heater 16. The infrared heater 16 and the susceptor boats 15 can form a plurality of naturally series-connected process channels 17, and the process gas can sequentially pass through the process channels 17.

[0036] The process channels 17 formed by the susceptor boats 15 and the infrared heaters 16 can be in parallel connection. The process gas can enter the process channels 17 separately. For example, a plurality of infrared heaters 16 and a plurality of susceptor boats 15 correspond to each other to form a plurality of process channels 17, and the process channels 17 formed by the plurality of susceptor boats 15 and the infrared heaters 16 are simultaneously connected to the gas source, and the process gas can simultaneously enter different process channels 17 separately. Another example is that the same infrared heater 16 can be provided corresponding to a plurality of susceptor boats 15, and the susceptor boats 15 can be respectively arranged on both sides of the infrared heater 16. The susceptor boats 15 naturally form two process channels 17 on both sides of the infrared heater 16, and the process gas can be simultaneously introduced into the two process channels 17 for coating.

[0037] Optionally, the process channels 17 formed by the susceptor boats 15 and the infrared heaters 16 are partially in series and partially in parallel. The process gas can simultaneously enter different parallel process channels 17 separately, and then sequentially enter other process channels 17 that are in series with the parallel process channels 17 respectively.

[0038] Combined with Figure 5 and Figure 6 , in some other embodiments, the susceptor boat 15 is detachably installed in the process cavity, and the infrared heater 16 is installed in the process cavity. In this embodiment, the susceptor boat 15 is directly placed in the process cavity.

[0039] In some embodiments, a plurality of carrier boats 15 are arranged in the installation cavity 14. A plurality of infrared heaters 16 respectively form process channels 17 with the carrier boats 15, and the process channels 17 are in parallel or series connection. The carrier boats 15 can be arranged in various ways. The process channels 17 formed by adjacent carrier boats 15 and infrared heaters 16 can be arranged in series. The process gas can flow through the process channels 17 in the arrangement direction of the carrier boats 15 in sequence. The process channels 17 formed by adjacent carrier boats 15 and infrared heaters 16 can be arranged in parallel, and the process gas can enter into the plurality of process channels 17 simultaneously and separately. Optionally, the process channels 17 can also be in parallel connection first and then in series connection.

[0040] Specifically, the series connection of the process channels 17 formed by the carrier boats 15 and the infrared heaters 16 can be, for example, as follows. For example, the process gas can sequentially pass through the process channels 17 in the arrangement direction of the carrier boats 15. For example, a plurality of infrared heaters 16 and a plurality of carrier boats 15 correspond to each other one by one to form a plurality of process channels 17, and the process gas sequentially passes through the process channels 17. Also for example, the same infrared heater 16 can be arranged corresponding to a plurality of carrier boats 15, the carrier boats 15 can be arranged on the same side of the infrared heater 16, and the infrared heater 16 and the carrier boats 15 can form a plurality of naturally series-connected process channels 17, and the process gas can sequentially pass through the process channels 17.

[0041] The parallel connection of the process channels 17 formed by the carrier boats 15 and the infrared heaters 16 can be, for example, as follows. For example, a plurality of infrared heaters 16 and a plurality of carrier boats 15 correspond to each other one by one to form a plurality of process channels 17, and the process channels 17 formed by the plurality of carrier boats 15 and the infrared heaters 16 are simultaneously connected to the gas source, and the process gas can enter into different process channels 17 simultaneously and separately. Also for example, the same infrared heater 16 can be arranged corresponding to a plurality of carrier boats 15, and the carrier boats 15 can be respectively arranged on both sides of the infrared heater 16. The carrier boats 15 naturally form two process channels 17 on both sides of the infrared heater 16, and film coating can be performed by simultaneously introducing the process gas into the two process channels 17.

[0042] Optionally, part of the process channels 17 formed by the carrier boats 15 and the infrared heaters 16 are in series connection and part are in parallel connection. The process gas can enter into different parallel process channels 17 simultaneously and separately, and then sequentially enter into other process channels 17 that are in series connection with the respective parallel process channels 17.

[0043] In some embodiments, multiple infrared heaters 16 are spaced apart in the process chamber, and an installation cavity 14 for mounting the wafer boat 15 is formed between the infrared heaters 16 at intervals. The wafer boat 15 is detachably mounted in the installation cavity 14. For example, the number of infrared heaters 16 can be two, three or more, and the infrared heaters 16 are spaced apart in the process chamber. Taking three infrared heaters 16 spaced apart by infrared heating as an example, the three infrared heaters 16 can form two installation cavities 14. Among them, two installation cavities 14 can mount two wafer boats 15, and the infrared heaters 16 can heat both sides of the wafer boat 15 respectively. Two installation cavities 14 can also mount multiple wafer boats 15, and the multiple wafer boats 15 can be arranged in sequence along the interval direction of the infrared heaters 16.

[0044] Among them, when two installation cavities 14 mount two wafer boats 15, the process channels 17 formed by the infrared heaters 16 and the wafer boats 15 are in a parallel relationship, and the process gas can enter the process channels 17 simultaneously and separately. When two installation cavities 14 mount multiple wafer boats 15, the process channels 17 have both series and parallel situations. For example, the wafer boats 15 in the same installation cavity 14 are arranged along the length direction of the infrared heater 16, and the same infrared heater 16 corresponds to multiple wafer boats 15. In this case, the process channels 17 in the same installation cavity 14 are in a series relationship, while the process channels 17 in two adjacent installation cavities 14 are in a parallel relationship. The two wafer boats 15 in the same installation cavity 14 can also be arranged back to back, and the two wafer boats 15 face the infrared heaters 16 on both sides respectively. In this case, the process channels 17 in the same installation cavity 14 can also be in a parallel relationship. The series and parallel of the process channels 17 are not limited to the situations described above in terms of distance.

[0045] Combined with Figure 1 , in some embodiments, the deposition device 1 further includes a shower plate 121 and a negative pressure pump 18, and the shower plate 121 and the negative pressure pump 18 are respectively communicated with the process channel 17. The shower plate 121 is arranged corresponding to the process channel 17. The shower plate 121 can uniformly introduce the process gas into the process channel 17, so as to meet the process conditions required for film coating. The negative pressure pump 18 can pump out the gas in the process channel 17 through the air outlet channel, so as to play the role of pumping vacuum or promoting the uniform flow of the process gas.

[0046] In some embodiments, the deposition apparatus 1 further includes a door 12. The shower plate 121 is disposed on the door 12 and is correspondingly disposed with the process channel 17 when the door 12 is closed. The door 12 is used to enclose the process chamber. The shower plate 121 is disposed on one side of the door 12 facing the process chamber. When the door 12 encloses the process chamber, the shower plate 121 can introduce process gases into the process channel 17 respectively. The shower plate 121 can protrude from the door 12, so that the shower plate 121 is closer to the process channel 17. Embedding the shower plate 121 in the process channel 17 can introduce the process gases into the process channel 17 more directly, and enable the heating plate and the wafer carrier 15 to seal the gas introduction of the shower plate 121, thereby reducing the flow of process gases through the gaps of the heating plate or the gaps of the wafer carrier 15, and reducing the occurrence of the phenomenon of overcoating.

[0047] In some embodiments, the deposition apparatus 1 further includes a chamber heating element 19. The chamber heating element 19 is installed on the apparatus main body 11 and is used to heat the process chamber. The chamber heating element 19 can be used to preheat or maintain the temperature of the process chamber during the film coating process, thereby reducing the time required for the process chamber to heat up and achieving the technical effect of improving production capacity.

[0048] Combined with Figure 7 , the embodiments of the present application provide a method for passivating a substrate. The method includes:

[0049] S10: Evacuation, evacuating the gas in the process chamber to maintain a sufficient vacuum degree in the process chamber.

[0050] To avoid interference of air or particles in the process chamber with the film coating process and cause contamination of the substrate. The gas in the process chamber can be evacuated by the negative pressure pump 18 and a certain vacuum degree can be maintained, so as to meet the process conditions required for film coating.

[0051] S20: Purge, introducing an inert protective gas to purge the impurities in the process chamber.

[0052] After evacuating the process gas to a sufficient vacuum degree, to reduce the interference of the remaining impurities with the film coating process, an inert protective gas such as nitrogen can be introduced into the process chamber, thereby purging the impurities in the process chamber and ensuring the cleanliness of the process chamber.

[0053] S30: Preheating, turning on the infrared heater 16 to preheat the substrate.

[0054] Coating the substrate requires the surface of the substrate to have a sufficient temperature. Turning on the infrared heater 16 can preheat the substrate, thereby raising its temperature to the process conditions required for coating. Among them, during the preheating process, the process chamber needs to have a sufficient vacuum degree, or only the aforementioned inert protective gas for purging. It is not necessary to introduce process gas during the preheating step.

[0055] In some embodiments, the deposition apparatus 1 further has a chamber heating element 19. In the case of having the chamber heating element 19, during the preheating step, the chamber heating element 19 can also be turned on to preheat the substrate. For example, the temperature of the chamber heating element 19 is maintained at 150 - 320 °C. Optionally, the temperature of the chamber heating element 19 is lower than the temperature of the infrared heater 16. The chamber heating element 19 can assist in the preheating of the infrared heater 16. However, if the temperature of the chamber heating element 19 is too high, it will cause the surface of the substrate that does not need to be coated to be heated, which may cause the technical problem of substrate adhesion. By setting the chamber heating element 19, the heat dissipation of the infrared heater 16 when heating the surface to be coated can be reduced, so that the temperature of the surface to be coated can be quickly heated to the process required temperature. However, the temperature of the chamber heating element 19 is set lower than the temperature of the infrared heater 16 to reduce the temperature of the part of the substrate that does not need to be heated and reduce the technical problem of adhesion.

[0056] In some embodiments, during the preheating step, the temperature of the infrared heater 16 is in the range of 280 - 650 °C. For example, 300 °C, 350 °C, 380 °C, 450 °C, 490 °C, 530 °C or 620 °C.

[0057] S40: Passivation, introducing process gas into the process channel 17 to coat the side surface of the substrate that is not covered. At the same time, maintain the temperature of the infrared heater 16 at a preset temperature.

[0058] By introducing process gas into the process channel 17, the process gas can flow through the surface of the substrate heated to the process temperature, thereby coating and passivating the side surface of the substrate that is not covered. Among them, during the coating and passivation process, maintain the temperature of the infrared heater 16 at a preset temperature. By maintaining the temperature of the infrared heater 16 at the preheating temperature, the process gas falling on the surface of the infrared heater 16 can be decomposed in time, avoiding the formation of a coating on the surface of the infrared heater 16. In this way, it is possible to avoid the surface of the infrared heater 16 being blocked by the coating, resulting in the influence on the emission of infrared rays, reducing the decrease in the heating efficiency of the infrared heater 16, and enabling the infrared heater 16 to continuously have the aforementioned ability to heat locally and specifically.

[0059] In some embodiments, during the passivation step, the temperature of the infrared heater 16 is maintained at 280 - 650 °C 。For example, 300 °C, 350 °C, 380 °C, 450 °C, 490 °C, 530 °C or 620 °C.

[0060] S50: Annealing, increasing the power of the infrared heater 16, and maintaining the temperature of the infrared heater at 600 - 1700 °C, such as 600 °C, 700 °C, 800 °C, 900 °C, 1000 °C, 1100 °C, 1200 °C, 1300 °C, 1400 °C, 1500 °C, 1600 °C or 1700 °C. Heat the substrate to the annealing temperature and then turn off the infrared heater 16.

[0061] The deposition device 1 of the present application can also anneal the coated substrate. Annealing requires heating the coated surface to a sufficient temperature, but in order to avoid substrate adhesion, the temperature of the uncoated surface cannot be too high. The method of the present application can effectively avoid depositing a film on the surface of the infrared heater 16 during the passivation process. The infrared heater 16 has a high heating efficiency for the surface that can be directly irradiated by infrared rays and a relatively low heating efficiency for the surface that cannot be directly irradiated by infrared rays. By using the infrared heater 16 for annealing, the surface of the substrate opposite to the infrared heater 16 (i.e., the coated surface) can be quickly heated to meet the process requirements, and the heating rate of other surfaces of the substrate can be reduced, reducing the phenomenon of substrate adhesion.

[0062] During the annealing process, the process gas is no longer introduced, and the process channel 17 can be evacuated to a sufficient vacuum degree by the vacuum pump 18, or an inert protective gas can be introduced through the spray plate 121.

[0063] In the case of having the cavity heating element 19, during the annealing step, the passivation method further includes reducing the temperature of the cavity heating element 19 or turning off the cavity heating element 19. Since annealing requires heating to a sufficient temperature and then natural heat preservation and cooling in the cavity. If the heat of the cavity heating element 19 is too high, it will affect the annealing process, so the cavity heating element 19 needs to be turned off or its temperature reduced during the annealing process to meet the process requirements of annealing.

[0064] S60: Breaking the vacuum, introducing an inert protective gas into the process cavity to restore the air pressure in the process cavity;

[0065] After annealing the substrate, an inert protector can be introduced into the process cavity to break the internal vacuum environment and restore the air pressure in the process cavity, so as to facilitate the opening of the door body 12 and the removal of the carrier boat 15.

[0066] S70: Transferring, transferring and cooling the substrate.

[0067] After breaking the vacuum, the substrate can be transferred out of the process cavity for cooling.

[0068] When the deposition apparatus 1 is provided with a cavity heating element 19, during the transfer step, the passivation method further includes turning on the cavity heating element 19 after removing the substrate. After removing the substrate, the cavity heating element 19 can be turned on, so as to maintain a certain temperature in the process cavity, thereby reducing the preheating time required for the next process and achieving the purpose of improving production capacity.

[0069] The above are only embodiments of the present application, and do not limit the patent scope of the present application accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A deposition device, characterized in that, Comprising: A device main body having a process cavity; A wafer boat disposed in the process cavity, the wafer boat having a receiving cavity for receiving a substrate, and the wafer boat covering at least one side of the substrate; An infrared heater disposed opposite and spaced apart from at least one side of the wafer boat that does not cover the substrate, with a process channel for process gas to flow through between the infrared heater and the wafer boat, and the infrared heater for heating the non-covered side of the substrate.

2. The deposition device according to claim 1, wherein: The deposition device further includes a carrier having a mounting cavity, the carrier being detachably mounted in the process cavity, the wafer boat being disposed in the mounting cavity, and the infrared heater being mounted on the carrier.

3. The deposition device according to claim 2, wherein: The substrates in the wafer boat are stacked, and the side of the stacked substrates to be coated is exposed to the process channel, and the other sides of the stacked substrates are covered by the wafer boat.

4. The deposition device according to any one of claims 2-3, wherein: A plurality of the carriers are provided in the process cavity, and the process channels are in parallel or in series; Alternatively, a plurality of the wafer boats are provided in the mounting cavity, the infrared heaters respectively form the process channels with the wafer boats, and the process channels are in parallel or in series.

5. The deposition device according to claim 1, wherein: The wafer boat is detachably mounted in the process cavity, and the infrared heater is mounted in the process cavity.

6. The deposition device according to claim 5, wherein: A plurality of the wafer boats are provided in the process cavity, a plurality of the infrared heaters respectively form the process channels with the wafer boats, and the process channels are in parallel or in series.

7. The deposition device according to claim 6, wherein: A plurality of the infrared heaters are spaced apart in the process cavity, and mounting cavities for mounting the wafer boats are formed at intervals between the infrared heaters; the wafer boats are detachably mounted in the mounting cavities.

8. The deposition device according to claim 1, wherein: The deposition device further includes a spray plate and a negative pressure pump, and the spray plate and the negative pressure pump are respectively communicated with the process channel.

9. The deposition device according to claim 8, wherein: The deposition device further includes a door body, the spray plate is disposed on the door body and corresponds to the process channel when the door body is closed.

10. The deposition device according to claim 1, wherein: The deposition device further includes a cavity heating member mounted on the device main body for heating the process cavity.

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