Focal plane photoelectric detector, focal plane photoelectric detection wafer and wafer assembly

Abstract

The utility model provides a focal plane photoelectric detector, a focal plane photoelectric detection wafer and a wafer assembly. The focal plane photoelectric detector comprises a photosensitive module and a readout circuit module. The photosensitive module comprises a light-transmitting substrate, a pixel layer arranged on one side of the light-transmitting substrate and a plurality of groups of first electrodes arranged on one side, deviating from the light-transmitting substrate, of the pixel layer; the pixel layer comprises a plurality of pixel units arranged on the light-transmitting substrate in an array, and each pixel unit is provided with a group of first electrodes; each pixel unit comprises a photosensitive detection area and an electrode setting area, and the first electrode is arranged in the electrode setting area of the pixel unit; the pixel layer is a lead salt film layer. The readout circuit module comprises a plurality of readout circuit units, the readout circuit units are in one-to-one correspondence with the pixel units, and each readout circuit unit is provided with a group of second electrodes opposite to a group of first electrodes; the photosensitive module is arranged on the readout circuit module, and one group of second electrodes of each readout circuit unit is connected with one group of first electrodes of the corresponding pixel unit through welding convex columns.

Description

Technical Field

[0001] This application belongs to the field of infrared detection technology, and particularly relates to a focal plane photodetector, a focal plane photodetection wafer, and a wafer assembly. Background Art

[0002] Traditional infrared photoconductive focal plane photodetectors generally include a substrate with a readout circuit and photosensitive pixels located on the substrate. For the substrate with a readout circuit, its substrate generally uses a silicon-based material substrate, and the photosensitive pixels generally use lead salt materials to form. When forming the photosensitive pixels, generally, a lead salt thin film is deposited on the wafer with a readout circuit, and the photosensitive pixels are formed by etching and other means. However, during the thin film deposition and sensitization processes of the wafer with a readout circuit, it will experience a high-temperature process, which may cause the key parameters of the readout circuit to drift and lead to the failure of the circuit function. Summary of the Invention

[0003] According to an embodiment of the present application, a focal plane photodetector is provided, which includes:

[0004] A photosensitive module, including a light-transmitting substrate, a pixel layer provided on one side of the light-transmitting substrate, and multiple groups of first electrodes provided on the side of the pixel layer facing away from the light-transmitting substrate; the pixel layer includes a plurality of pixel units arranged in an array on the light-transmitting substrate, and a group of first electrodes is provided on the side of each pixel unit facing away from the light-transmitting substrate; wherein, each pixel unit includes a photosensitive detection area in the middle and an electrode setting area surrounding the photosensitive detection area, and each group of first electrodes is provided in the electrode setting area of the corresponding pixel unit; the pixel layer is a lead salt thin film layer;

[0005] A readout circuit module, including a plurality of readout circuit units, the plurality of readout circuit units corresponding to the plurality of pixel units one by one, and each readout circuit unit having a group of second electrodes opposite to a group of first electrodes of the corresponding pixel unit; the photosensitive module is provided on the readout circuit module, the first electrodes of the photosensitive module are located on the side facing the readout circuit module, and a group of the second electrodes of each readout circuit unit is connected to a group of the first electrodes of the corresponding pixel unit through welding studs.

[0006] In some embodiments, each pixel unit further includes a reflective layer on the side of the pixel unit facing away from the light-transmitting substrate, and the reflective layer is provided in the photosensitive detection area of the corresponding pixel unit.

[0007] In some embodiments, the focal plane photodetector is an infrared detector, and the infrared band transmittance of the light-transmitting substrate is greater than or equal to 90%.

[0008] In some embodiments, the light-transmitting substrate is a sapphire substrate, a quartz substrate, or a calcium fluoride substrate.

[0009] In some embodiments, at least some of the welding studs connecting each group of first electrodes and second electrodes are initially disposed on the corresponding first electrodes.

[0010] In some embodiments, at least some of the welding studs connecting each group of first electrodes and second electrodes are initially disposed on the corresponding second electrodes.

[0011] In some embodiments, at least some of the welding studs connecting each group of first electrodes and second electrodes include a first-layer welding stud and a second-layer welding stud stacked thereon; wherein, the first-layer welding stud is initially disposed on the corresponding first electrode, and the second-layer welding stud is initially disposed on the corresponding second electrode.

[0012] According to an embodiment of the present application, there is further provided a focal plane optoelectronic detection wafer having a plurality of detection unit regions, which includes:

[0013] A light-transmitting substrate,

[0014] A pixel layer, the pixel layer includes a plurality of pixel units arranged in an array in each detection unit region, each pixel unit includes a photosensitive detection region in the middle and an electrode arrangement region surrounding the photosensitive detection region, and the pixel layer is a lead salt thin film layer;

[0015] An electrode layer, including multiple groups of first electrodes, one group of first electrodes is provided on the side of each pixel unit facing away from the light-transmitting substrate, and each group of first electrodes is disposed in the electrode arrangement region of the pixel unit where it is located.

[0016] In some embodiments, each pixel unit further includes a reflective layer on the side of the pixel unit facing away from the light-transmitting substrate, and the reflective layer is disposed in the photosensitive detection region of the pixel unit where it is located; and / or,

[0017] The infrared band transmittance of the light-transmitting substrate is greater than or equal to 90%; and / or,

[0018] The light-transmitting substrate is a sapphire substrate, a quartz substrate or a calcium fluoride substrate; and / or,

[0019] Welding studs are provided on at least some of the first electrodes.

[0020] According to an embodiment of the present application, there is further provided a wafer assembly, the wafer assembly includes:

[0021] A first wafer, the first wafer is the focal plane optoelectronic detection wafer as described above;

[0022] A second wafer, where the second wafer is a readout circuit wafer, the second wafer includes a plurality of readout circuit modules, and the plurality of readout circuit modules correspond to the plurality of detection unit regions one by one; each readout circuit module includes a plurality of readout circuit units, the plurality of readout circuit units of each readout circuit module correspond to the plurality of pixel units of the corresponding detection unit region one by one, and each readout circuit unit has a set of second electrodes opposite to a set of first electrodes of the corresponding pixel unit; the first electrodes of the detection unit region are located on the side facing the readout circuit module, and the set of second electrodes of each readout circuit unit and the set of first electrodes of the corresponding pixel unit are connected by solder bumps.

[0023] The main technical effects achieved by the embodiments of the present application are:

[0024] The focal plane photodetector, the focal plane photodetection wafer and the wafer assembly provided by the embodiments of the present application, by arranging the photosensitive module with a lead salt thin film layer as the pixel layer on the transparent substrate and docking with the readout circuit module in a flip-chip form, can avoid the critical parameter drift of the readout circuit caused when forming the pixel layer, resulting in circuit function failure, which is beneficial to improving the preparation yield of the focal plane photodetector and the service life of the focal plane photodetector. Description of the Drawings

[0025] Figure 1 A cross-sectional view of a focal plane photodetector provided by an embodiment of the present application;

[0026] Figure 2 A cross-sectional view of a photosensitive module provided by an embodiment of the present application;

[0027] Figure 3 A cross-sectional view of a readout circuit module provided by an embodiment of the present application;

[0028] Figure 4 A cross-sectional view of another photosensitive module provided by an embodiment of the present application;

[0029] Figure 5 A top view of a first wafer blank provided by an embodiment of the present application;

[0030] Figure 6 A top view and a partial enlarged view of a first wafer provided by an embodiment of the present application;

[0031] Figure 7 A top view of a second wafer blank provided by an embodiment of the present application;

[0032] Figure 8 A top view and a partial enlarged view of a second wafer provided by an embodiment of the present application;

[0033] Figure 9 A schematic diagram of bonding a first wafer and a second wafer provided in an embodiment of the present application;

[0034] Figure 10 A top view and a partially enlarged three-dimensional schematic diagram of another focal plane photodetector provided by an embodiment of the present application. DETAILED DESCRIPTION

[0035] Here, the technical solutions in the embodiments (or "implementations") of the present application will be described clearly and completely in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0036] If there are terms involving directional indications or positional relationships in the embodiments of the present application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components in a certain specific posture; if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first", "second", etc. involved in the embodiments of the present application are only used for the purpose of convenience of description and cannot be understood as indicating or implying relative importance.

[0037] The following is combined with Figures 1 to 10 The focal plane photodetector, focal plane photodetection wafer and wafer assembly are described in detail.

[0038] Please refer to Figure 1 , and in combination with other drawings when necessary, the present application provides a focal plane photodetector 100, which includes a photosensitive module 10 and a readout circuit module.

[0039] The photosensitive module 10 includes a transparent substrate 11, a pixel layer 12 arranged on one side of the transparent substrate 11, and a plurality of groups of first electrodes 13 arranged on the side of the pixel layer 12 away from the transparent substrate 11; the pixel layer 12 includes a plurality of pixel units 101 arranged in an array on the transparent substrate 11, and each pixel unit 101 is provided with a group of first electrodes 13 on the side away from the transparent substrate 11; wherein each pixel unit 101 includes a photosensitive detection area S1 located in the middle and an electrode setting area S2 located at the periphery of the photosensitive detection area S1, and each group of the first electrodes 13 is arranged in the electrode setting area S2 of the pixel unit 101; the pixel layer 12 is a lead salt thin film layer.

[0040] The readout circuit module 20 includes a plurality of readout circuit units 201, and the plurality of readout circuit units 201 correspond one-to-one to the plurality of pixel units 101, and each readout circuit unit 201 has a group of second electrodes 22 opposite to a group of first electrodes 13 of the corresponding pixel unit 101; the photosensitive module 10 is arranged on the readout circuit module 20, and the first electrode 13 of the photosensitive module 10 is located on the side facing the readout circuit module 20, and a group of the second electrodes 22 of each readout circuit unit 201 is connected to a group of the first electrodes 13 of the corresponding pixel unit 101 through a welding boss 30.

[0041] The above-mentioned focal plane photodetector 100, by arranging the photosensitive module 10 whose pixel layer 12 is a lead salt thin film layer on the transparent substrate 11, and docking it with the readout circuit module 20 in the form of a flip-chip, can avoid the key parameter drift of the readout circuit caused by the formation of the pixel layer 12, which may lead to circuit function failure, and is beneficial to improving the preparation yield of the focal plane photodetector 100 and increasing the service life of the focal plane photodetector 100.

[0042] It should be noted that Figure 1 The focal plane photodetector 100 shown in the figure is only exemplarily shown to have one pixel unit 101 and one readout circuit unit 201. The focal plane photodetector 100 may actually include a plurality of pixel units 101 and readout circuit units 201 that are opposite to each other. Figure 2 and Figure 4 Only one pixel unit 101 of the photosensitive module 10 is illustrated as an example. Figure 3 Only one readout circuit unit 201 of the readout circuit module 20 is exemplarily illustrated.

[0043] The welding protrusion 30 includes but is not limited to a metal indium column or a copper ball.

[0044] In some embodiments, each of the pixel units 101 further includes a reflective layer 14 located on the side of the pixel unit 101 facing away from the transparent substrate 11. The reflective layer 14 is arranged in the photosensitive detection area S1 of the pixel unit 101 to further improve the sensitivity of the photosensitive area and improve the photosensitivity effect of the device.

[0045] The reflective layer 14 may be a metal thin film layer. The material of the reflective layer 14 may be a metal material, such as a metal gold material. Accordingly, the reflective layer 14 is a gold thin film layer.

[0046] In some embodiments, the focal plane photodetector 100 is an infrared detector, and the infrared band transmittance of the light-transmitting substrate 11 is greater than or equal to 90% to ensure the photosensitivity of the pixel.

[0047] In some embodiments, the light-transmitting substrate 11 is a sapphire substrate, a quartz substrate or a calcium fluoride substrate, which can well overcome the thermal mismatch problem caused by the large difference in the thermal expansion coefficients between the lead salt thin film layer and the silicon substrate, reduce the thermal mismatch problem with the lead salt thin film layer, and improve the quality of the photosensitive module.

[0048] In some embodiments, at least some of the welding studs 30 connecting each group of the first electrodes 13 and the second electrodes 22 are initially provided on the corresponding first electrodes 13. For example Figure 2 As shown, the welding studs 30 are initially provided on the corresponding first electrodes 13. Correspondingly, the second electrodes 22 corresponding to the first electrodes 13 on which the welding studs 30 are initially provided in the readout circuit module 20 are not provided with welding studs, and the second electrodes 22 are welded to the corresponding first electrodes 13 through the welding studs 30 initially provided on the first electrodes 13.

[0049] In some embodiments, at least some of the welding studs 30 connecting each group of the first electrodes 13 and the second electrodes 22 are initially provided on the corresponding second electrodes 22. For example Figure 3 As shown, the welding studs 30 are initially provided on the corresponding second electrodes 22. Correspondingly, the first electrodes 13 corresponding to the second electrodes 22 on which the welding studs 30 are initially provided in the photosensitive module 10 are not provided with welding studs. For example Figure 4 As shown in the photosensitive module 10', the first electrodes 13 are welded to the corresponding second electrodes 22 through the welding studs 30 initially provided on the second electrodes 22.

[0050] In some embodiments, at least some of the welding studs 30 connecting each group of the first electrodes 13 and the second electrodes 22 include a first-layer welding stud 30 and a second-layer welding stud 30 stacked; wherein, the first-layer welding stud 30 is initially provided on the corresponding first electrode 13, and the second-layer welding stud 30 is initially provided on the corresponding second electrode 22.

[0051] In addition, the intervals of the welding studs 30 are filled with filling glue to stably cure the structure.

[0052] According to an embodiment of the present application, there is further provided a focal plane photoelectric detection wafer 1000 having a plurality of detection unit regions 1, which includes a light-transmitting substrate 11, a pixel layer 12 and an electrode layer.

[0053] The pixel layer 12 includes a plurality of pixel units 101 arranged in an array in each detection unit region 1. Each pixel unit 101 includes a photosensitive detection region S1 in the middle and an electrode setting region S2 outside the photosensitive detection region S1. The pixel layer 12 is a lead salt thin film layer. Each detection unit region 1 forms a corresponding photosensitive module 10 after dicing.

[0054] The electrode layer includes multiple groups of first electrodes 13. One group of first electrodes 13 is provided on the side of each pixel unit 101 facing away from the light-transmitting substrate 11, and each group of first electrodes 13 is disposed in the electrode setting area S2 of the corresponding pixel unit 101.

[0055] In some embodiments, each pixel unit 101 further includes a reflective layer 14 on the side of the pixel unit 101 facing away from the light-transmitting substrate 11, and the reflective layer 14 is disposed in the photosensitive detection area S1 of the corresponding pixel unit 101.

[0056] In some embodiments, the infrared band transmittance of the light-transmitting substrate 11 is greater than or equal to 90%.

[0057] In some embodiments, the light-transmitting substrate 11 is a sapphire substrate, a quartz substrate, or a calcium fluoride substrate, which can well overcome the thermal mismatch problem caused by the large difference in the thermal expansion coefficients between the lead salt thin film layer and the silicon-based substrate, reduce the thermal mismatch problem with the lead salt thin film layer, and improve the quality of the photosensitive module.

[0058] In some embodiments, welding studs 30 are provided on at least part of the first electrodes 13.

[0059] According to an embodiment of the present application, there is further provided a wafer assembly, which includes a first wafer 1000 and a second wafer 2000. The first wafer 1000 is the focal plane photoelectric detection wafer 1000 as described above. The second wafer 2000 is a readout circuit wafer, and the second wafer includes a plurality of readout circuit modules 20, and the plurality of readout circuit modules 20 correspond to a plurality of detection unit areas one by one; each readout circuit module 20 includes a plurality of readout circuit units 201, and the plurality of readout circuit units 201 of each readout circuit module 20 correspond to a plurality of pixel units 101 in the corresponding detection unit area one by one. Each readout circuit unit 201 has a group of second electrodes 22 opposite to a group of first electrodes 13 of the corresponding pixel unit 101; the first electrodes 13 in the detection unit area are located on the side facing the readout circuit module 20, and the group of second electrodes 22 of each readout circuit unit 201 is connected to the group of first electrodes 13 of the corresponding pixel unit 101 through welding studs 30.

[0060] Combined Figures 5 to 10 As shown, the focal plane photodetector 100 or a similar focal plane photodetector can be specifically fabricated by the following method.

[0061] As Figure 5 shown, a first wafer blank 1001 can be provided first.

[0062] Among them, the first wafer blank 1001 can be a wafer blank such as sapphire, quartz, calcium fluoride, etc., which has a high light transmittance in the visible and infrared bands.

[0063] As Figure 6 shown, a pixel layer, a first electrode 13, and a reflective layer 14 can be provided on the first wafer blank 1001 to form the first wafer 1000.

[0064] Specifically, first, lead salt thin film growth and pixelation are performed on the surface of the first wafer blank 1001 to form a pixel layer.

[0065] Among them, the lead salt thin film can be grown or prepared in various ways.

[0066] In some embodiments, a lead salt thin film can be formed by chemical bath deposition of a thin film. Taking the formation of a PbSe thin film as an example, specifically, a mother liquor for thin film deposition can be prepared by mixing a lead source, a selenium source, an alkali source, an iodine source, and deionized water according to a fixed ratio. The prepared first wafer blank 1001 is placed parallel to the bottom of the container in the mother liquor using a fixed fixture. The environmental temperature can be set to 60 - 90 °C. After standing for 3 - 3.5 h, the substrate is taken out and rinsed with deionized water. Then, photolithographic pixelation is performed on the lead salt photosensitive thin film. The prepared PbSe thin film is placed in a sealed sensitization chamber. The temperature in the chamber is set to a preset temperature, and oxygen and an oxygen / iodine vapor mixed gas are introduced into the sealed chamber in sequence to complete the sensitization of the PbSe thin film, thereby forming a PbSe thin film.

[0067] In this embodiment, the first wafer blank 1001 can be a bottom wafer of an 8 - inch substrate. The preset temperature can be 380 °C.

[0068] The above - mentioned lead source includes but is not limited to lead acetate, lead chloride, and lead nitrate.

[0069] The above - mentioned selenium source includes but is not limited to selenium powder and selenourea.

[0070] The above - mentioned alkali source includes but is not limited to sodium hydroxide, potassium hydroxide, sodium carbonate, and lithium hydroxide.

[0071] The above - mentioned iodine source includes but is not limited to iodine, potassium iodide, ammonium iodide, and potassium iodate.

[0072] In other embodiments, a lead salt thin film can be formed by spin - coating quantum dots to form a film. Taking the formation of a PbSe quantum dot thin film as an example, specifically, PbSe quantum dots can be prepared by a hot - injection method and configured into an ink with a concentration of 50 mg / ml. The quantum dot ink is spin - coated 20 times by a layer - by - layer spin - coating method to form a film on the surface of the first wafer blank 1001. The completed spin - coated quantum dot thin film can be placed on a hot plate for annealing, for example, annealing at a temperature of 100 °C for 2 min. This quantum dot thin film does not require photolithographic pixelation.

[0073] The above-mentioned quantum dots may include quantum dots of different sizes with absorption wavelengths in the range of 900 - 2000 nm.

[0074] The above-mentioned quantum dot ink solvent includes but is not limited to n-hexane, n-octane, n-heptane, nonane, butylamine, toluene, chloroform, N,N-dimethylformamide, and dimethyl sulfoxide.

[0075] In still other embodiments, a lead salt thin film can be formed by physical vapor deposition of a thin film. Taking the formation of a PbSe thin film as an example, specifically, a PbSe bulk material with a purity greater than 99.99% can be used as a raw material and placed in a molybdenum boat. The molybdenum boat is placed in a vacuum chamber with a vacuum degree of 2E-4 torr. At the same time, the first wafer original 1001 is fixed on a rotating disk above the vacuum chamber, and the PbSe thin film evaporation can be completed at an evaporation rate of 2 - 4 A / s. Then, photolithographic pixelation is performed on the lead salt photosensitive thin film. The prepared PbSe thin film is placed in a closed sensitization chamber, the temperature in the chamber is set to 380 °C, and oxygen and an oxygen / iodine vapor mixed gas are sequentially introduced into the closed chamber to complete the sensitization of the PbSe thin film.

[0076] Subsequently, a first electrode 13 and a reflective layer 14 are formed to form the first wafer 1000.

[0077] An electrode metal layer can be formed and the first electrode 13 can be formed through pixelated etching.

[0078] The first electrode 13 includes but is not limited to gold, silver, chromium, nickel, indium, and the preparation methods of its electrode metal layer include but are not limited to thermal evaporation deposition, electron beam deposition, magnetron sputtering deposition, and physical vapor deposition.

[0079] The reflective layer 14 can also be formed by forming a corresponding material layer and through pixelated etching.

[0080] As Figure 7 shown, a second wafer original 2001 can be provided.

[0081] As Figure 8 shown, a readout circuit and a second electrode 22 can be formed on the second wafer original 2001 to form the second wafer 2000.

[0082] After forming the first electrode 13 and after forming the second electrode 22, welding studs 30 can be provided on at least one of the first electrode 13 and the second electrode 22 as needed.

[0083] It should be noted that the order of the steps of forming the first wafer 1000 and forming the second wafer 2000 is not limited.

[0084] As Figure 9, bond the first wafer 1000 and the second wafer 2000 to form a wafer assembly.

[0085] Bond the first wafer 1000 and the second wafer in a flip-chip bonding manner.

[0086] Subsequently, between the solder bumps 30 in the bonded wafer assembly, set a filling adhesive to stably cure the structure.

[0087] As Figure 10 shown, after slicing the wafer assembly, form a plurality of focal plane photodetectors 100 or similar focal plane photodetectors.

[0088] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the drawings. All modifications, equivalent replacements, improvements, etc. made within the spirit and principle of this application shall be included within the scope of protection of this application.

Claims

1. A focal plane photodetector, characterized in that, include: A photosensitive module, comprising a light-transmitting substrate, a pixel layer disposed on one side of the light-transmitting substrate, and a plurality of groups of first electrodes disposed on a side of the pixel layer away from the light-transmitting substrate; The pixel layer comprises a plurality of pixel units arranged in an array on the light-transmitting substrate, and a group of first electrodes is provided on a side of each pixel unit facing away from the light-transmitting substrate; wherein each pixel unit comprises a photosensitive detection area located in the middle and an electrode setting area located at the periphery of the photosensitive detection area, and each group of the first electrodes is provided in the electrode setting area of the pixel unit; the pixel layer is a lead salt thin film layer; The readout circuit module includes a plurality of readout circuit units, the plurality of readout circuit units correspond one to one with the plurality of pixel units, and each readout circuit unit has a group of second electrodes opposite to a group of first electrodes of the corresponding pixel unit; the photosensitive module is arranged on the readout circuit module, the first electrode of the photosensitive module is located on a side facing the readout circuit module, and a group of the second electrodes of each readout circuit unit is connected to a group of the first electrodes of the corresponding pixel unit through welding bosses.

2. The focal plane photodetector according to claim 1, wherein Each of the picture element units further comprises a reflective layer located on a side of the picture element unit away from the light-transmitting substrate, and the reflective layer is arranged in a photosensitive detection area of the picture element unit.

3. The focal plane photodetector according to claim 1, characterized in that, The focal plane photoelectric detector is an infrared detector, and the infrared band transmittance of the light-transmitting substrate is greater than or equal to 90%.

4. The focal plane photodetector according to claim 1, characterized in that, The light-transmitting substrate is a sapphire substrate, a quartz substrate or a calcium fluoride substrate.

5. The focal plane photodetector according to claim 1, wherein, At least part of the welding protrusions connecting each group of first electrodes and second electrodes are initially arranged on the corresponding first electrodes.

6. The focal plane photodetector according to claim 1, characterized in that, At least part of the welding protrusions connecting each group of first electrodes and second electrodes are initially arranged on the corresponding second electrodes.

7. The focal plane photodetector according to claim 1, characterized in that, At least some of the welding bosses connecting each group of first electrodes and second electrodes include stacked first and second layers of welding bosses; wherein the first layer of welding bosses is initially arranged on the corresponding first electrode, and the second layer of welding bosses is initially arranged on the corresponding second electrode.

8. A focal plane optoelectronic detection wafer having a plurality of detection unit regions, characterized in that, include: Translucent substrate, A pixel layer, the pixel layer comprising a plurality of pixel units arranged in an array and located in each detection unit area, each of the pixel units comprising a photosensitive detection area located in the middle and an electrode setting area located at the periphery of the photosensitive detection area, and the pixel layer is a lead salt thin film layer; The electrode layer comprises a plurality of groups of first electrodes. A group of first electrodes is arranged on the side of each pixel unit facing away from the light-transmitting substrate, and each group of the first electrodes is arranged in the electrode arrangement area of the pixel unit.

9. The focal plane optoelectronic detection wafer according to claim 8, wherein, Each of the pixel units further comprises a reflective layer located on a side of the pixel unit away from the light-transmitting substrate, and the reflective layer is arranged in a photosensitive detection area of the pixel unit; and / or, The infrared band transmittance of the light-transmitting substrate is greater than or equal to 90%; and / or, The light-transmitting substrate is a sapphire substrate, a quartz substrate or a calcium fluoride substrate; and / or, At least a portion of the first electrodes is provided with welding protrusions.

10. A wafer component, characterized in that, The wafer assembly comprises: A first wafer, wherein the first wafer is the focal plane photodetection wafer as claimed in claim 8 or 9; A second wafer, where the second wafer is a readout circuit wafer, the second wafer includes a plurality of readout circuit modules, and the plurality of readout circuit modules correspond to the plurality of detection unit regions one by one; each readout circuit module includes a plurality of readout circuit units, the plurality of readout circuit units of each readout circuit module correspond to the plurality of pixel units of the corresponding detection unit region one by one, and each readout circuit unit has a set of second electrodes opposite to a set of first electrodes of the corresponding pixel unit; the first electrodes of the detection unit region are located on the side facing the readout circuit module, and the set of second electrodes of each readout circuit unit and the set of first electrodes of the corresponding pixel unit are connected by solder bumps.

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