Flat plate type plasma generating device of batch peald equipment

Abstract

The utility model provides a flat plate type plasma generating device of batch peald equipment, and relates to the technical field of plasma generating devices. Comprising a vacuum chamber, an RF coil, a medium flat plate, an air inlet pipeline and a grid mesh plate, the medium flat plate is arranged on the outer side of the vacuum chamber and is opposite to the position of the substrate; the grid mesh plate is arranged on the other side, opposite to the medium window, of the vacuum chamber; the gas inlet pipeline extends into the vacuum chamber so as to provide process gas for the vacuum chamber; the RF coil is of a flat plate type spiral symmetrical structure and is installed on the side, away from the vacuum cavity, of the medium flat plate, so that plasmas are evenly distributed on the medium flat plate right facing the substrate. According to the scheme, the reaction uniformity can be improved, and the plasma generating device is simpler in structure.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma generating devices, and more specifically, to a flat-plate plasma generating device for a batch-type peald device. Background Art

[0002] The plasma generating device of the existing batch-type peald device mainly adopts a spiral coil structure, with a radio frequency coil in a spiral or multi-layer rectangular form wrapped around the outside of the plasma generating chamber. However, in the structure of the plasma generating device with a spiral coil structure, the plasma dense area and the uniform area are mainly concentrated on the side wall of the plasma generating chamber, and it is relatively difficult to control the uniformity of the overall substrate. Moreover, due to the coil structure and problems such as the uniform diffusion of the ionization gas, the size required in the depth direction of the plasma generating chamber is relatively large, and the structure is relatively complex; during the process, in order to reduce the condensation problem of some components of the plasma device, a mold temperature controller needs to be specially configured for the plasma device to control the temperature of some components, making the device structure even more complex. In addition, the distance between the plasma generating device and the process chamber is relatively far, and the actual plasma transmission efficiency is relatively low. To achieve the same film layer performance, the plasma generating device needs to input a higher power. Summary of the Utility Model

[0003] The utility model discloses a flat-plate plasma generating device for a batch-type peald device, aiming to solve the problems mentioned above.

[0004] The utility model adopts the following solutions:

[0005] A flat-plate plasma generating device for a batch-type peald device, comprising: a vacuum chamber, an RF coil, a dielectric plate, and a grid plate; wherein, the dielectric plate is arranged on the outside of the vacuum chamber and opposite to the position of the substrate, and is provided with a dielectric window for coupling radio frequency waves into the vacuum chamber; the grid plate is arranged on the vacuum chamber and on the other side opposite to the dielectric window, for controlling the bombardment density of the plasma on the substrate to reduce the temperature rise of the substrate; the RF coil is adapted to provide an excitation electromagnetic field to the vacuum chamber under the drive of a radio frequency power supply to ionize the process gas in the vacuum chamber to form plasma, and the RF coil is installed in a flat-plate structure on the side of the dielectric plate away from the vacuum chamber, so that the plasma is uniformly distributed on the dielectric plate facing the substrate.

[0006] Further, the distance between the dielectric plate and the grid plate is 40 mm to 200 mm.

[0007] Further, an anti-fouling plate is arranged on the inner wall of the vacuum chamber to prevent the plasma from etching the metal wall.

[0008] Further, the grid plate has a dense round hole structure or a strip-shaped square hole structure.

[0009] Further, an intake pipeline is further included, and the intake pipeline forms a circular distribution structure in the vacuum chamber to improve the uniformity of gas in the chamber.

[0010] Further, cavity flanges are provided at both ends of the vacuum chamber, and the intake pipeline enters the vacuum chamber from the cavity flanges.

[0011] Further, the grid plate is arranged on the door flange.

[0012] Further, the RF coil is connected to a radio frequency power supply.

[0013] Further, the RF coil presents a spiral and centrosymmetric structure on the plane of the dielectric plate.

[0014] Beneficial effects:

[0015] In this solution, due to the design of the flat-plate plasma structure, the plasma dense area and the uniform distribution area are on the dielectric plate facing the substrate, and the uniformity of the ionized gas is relatively easy to control. Since the RF coil is concentrated on one plane, the structure of the plasma device is relatively simple and the space size is small. Further, the condensation problem of the process film layer can be solved by the heat conduction method of the equipment, and the plasma component does not require an additional independent heating or cooling device, making the structure more simplified. The bombardment of the plasma on the substrate can be well controlled through the grid plate structure between the plasma and the substrate, reducing the temperature rise of the substrate.

[0016] In the design of this solution, the positions of the plasma source and the substrate can be relatively closer, the transmission efficiency of the plasma is higher, and to achieve the same film layer performance, the input power of the plasma generating device can be relatively lower. Preferably, there is an anti-fouling plate on the inner wall of the plasma generation cavity, which can prevent the plasma from etching the metal wall and can also facilitate the maintenance of the equipment and components. Description of the drawings

[0017] Figure 1 is a schematic structural diagram of a flat-plate plasma generating device of a batch-type peald device according to an embodiment of the present invention;

[0018] Figure 2 is a schematic structural diagram of the RF coil of a flat-plate plasma generating device of a batch-type peald device according to an embodiment of the present invention;

[0019] Figure 3 is a schematic structural diagram of the grid plate of a flat-plate plasma generating device of a batch-type peald device according to an embodiment of the present invention;

[0020] Icons: dielectric plate 1, RF coil 2, process gas pipe on the vacuum side 3, process gas pipe on the atmosphere side 4, grid plate 5, anti-pollution plate 6, RF power supply 7, cavity flange 8, door flange 9, vacuum chamber 10. Specific implementation mode

[0021] Combined with Figures 1 to 3 As shown, this embodiment provides a flat-plate plasma generating device for a batch-type peald device, including: a vacuum chamber 10, an RF coil 2, a dielectric plate 1, an intake pipeline, and a grid plate 5; wherein, the dielectric plate 1 is arranged on the outer side of the vacuum chamber 10 and faces the substrate position, and is provided with a dielectric window for coupling radio frequency waves into the vacuum chamber 10; the grid plate 5 is arranged on the vacuum chamber 10 and on the other side opposite to the dielectric window, and is used to control the bombardment density of the plasma on the substrate to reduce the temperature rise of the substrate; the intake pipeline extends into the vacuum chamber 10 to supply process gas to the vacuum chamber 10; the RF coil 2 is adapted to provide an excitation electromagnetic field to the vacuum chamber 10 under the drive of an RF power supply 7 to ionize the process gas to form a plasma, and the RF coil 2 is installed in a flat-plate structure on the side of the dielectric plate away from the vacuum chamber 10, so that the plasma is evenly distributed on the dielectric plate 1 facing the substrate.

[0022] Combined with Figure 1 As shown, in this embodiment, the plasma generating device includes a frame, on which a vacuum chamber 10 is arranged. The vacuum chamber 10 is used to introduce process gas, and under the action of an excitation electromagnetic field, ionize the process gas to form a plasma, and then transport the plasma to the substrate. Therefore, it is required that the transmission path of the plasma by the vacuum chamber 10 is as short as possible. Considering that space for the distribution of the intake pipeline is also required inside the vacuum chamber 10, in this solution, the distance between the dielectric plate 1 and the grid plate 5 is set to be 40 mm to 200 mm. This setting also makes the plasma source and the substrate position relatively closer, and the transmission efficiency of the plasma is higher. To achieve the same film layer performance, the power input to the plasma generating device can be relatively lower.

[0023] A dielectric window is provided on the dielectric plate 1. The dielectric plate 1 is disposed on one side of the vacuum chamber 10 and can be used to enclose the vacuum chamber. At the same time, the dielectric plate 1 is used to couple the radio frequency waves generated by the RF coil 2 into the vacuum chamber 10 to provide an excitation electromagnetic field to the vacuum chamber 10 to ionize the process gas to form a plasma. The dielectric plate 1 can be made of a quartz plate or a ceramic plate material. Preferably, an anti-fouling plate 6 is provided on the inner wall of the vacuum chamber 10 to prevent the plasma from etching the metal wall and also facilitate the maintenance of the equipment and components. Here, for the material of the anti-fouling plate 6, the anti-fouling plate 6 close to the dielectric plate 1 is made of quartz or ceramic material, and the anti-fouling plate 6 at other positions in the vacuum chamber 10 is treated with a ceramic layer on the metal surface. This is because the ionization gas concentration near the dielectric plate 1 is relatively high, and a fully quartz or ceramic material is required to improve the anti-etching effect, while at other positions, the anti-fouling plate 6 with a ceramic layer on the metal surface can be used.

[0024] As shown in combination with Figure 3 shown, the grid plate 5 is disposed on the side of the vacuum chamber 10 facing the substrate. It has a dense round hole structure or a strip-shaped square hole structure. Through the grid plate 5, the bombardment of the plasma on the substrate can be well controlled, and the temperature rise of the substrate can be reduced. The vacuum chamber 10 is also provided with a door plate. The door plate is disposed on the door flange 9, and the grid plate 5 is also disposed on the door flange 9; that is to say, after the plasma is generated in the vacuum chamber 10, it passes through the grid plate 5 to be transported to the substrate for reaction. Therefore, in the plasma generating device, the transmission distance of the plasma is less than the distance between the dielectric plate 1 and the grid plate 5.

[0025] As shown in combination with Figure 2 shown, the RF coil 2 is connected to a radio frequency power supply 7. The radio frequency power supply 7 is disposed outside the dielectric plate 1. The RF coil 2 is laid flat on the surface of the dielectric plate 1 or embedded in the dielectric plate 1, and the entire RF coil 2 is arranged in a spiral and centrosymmetric structure. On the one hand, it can increase the inductance range, and on the other hand, it can make the generated plasma distribution more uniform and concentrated, which is convenient for improving the uniformity of the plasma. The RF coil 2 presents a spiral and centrosymmetric structure on the dielectric plate plane. Specifically, the RF coil 2 can include two coils. The spiral means that the two coils are wound in the same direction on the dielectric plate 1 and do not intersect each other, thus presenting a centrosymmetric structure arrangement.

[0026] The intake pipeline forms a circular distribution structure within the vacuum chamber 10 to improve the uniformity of gas within the chamber. Here, multiple pipelines can be arranged within the vacuum chamber 10 for the intake pipeline, and cavity flanges 8 are provided at both ends of the vacuum chamber 10. The intake pipeline enters the vacuum chamber from the cavity flanges 8. In this embodiment, the intake pipeline includes a vacuum-side process gas pipeline 3 located within the vacuum chamber 10 and an atmosphere-side process gas pipeline 4 located outside the vacuum chamber 10. The vacuum-side process gas pipeline 3 and the atmosphere-side process gas pipeline 4 are connected within the cavity flange 8.

[0027] In this embodiment, since the RF coil 2 is concentrated on a flat plane, the structure of the plasma device is relatively simple and has a smaller spatial size. Furthermore, the condensation problem of the process film layer can be solved by the heat conduction of the device, and no additional independent heating or cooling device is required. Therefore, the overall structure is more concise.

[0028] It should be understood that the above are only the preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions falling within the concept of the present invention belong to the protection scope of the present invention.

[0029] The above introduction to the drawings used in the embodiments only shows some embodiments of the present invention and should not be regarded as a limitation of the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

Claims

1. A flat-plate plasma generating device for a batch-type peald device, characterized in that Comprising: A vacuum chamber, an RF coil, a dielectric plate, and a grid plate; wherein, The dielectric plate is arranged outside the vacuum chamber and opposite to the substrate position, and is provided with a dielectric window for coupling radio frequency waves into the vacuum chamber; The grid plate is arranged on the vacuum chamber and on the other side opposite to the dielectric window, and is used to control the bombardment density of the plasma on the substrate to reduce the temperature rise of the substrate; The RF coil is adapted to provide an excitation electromagnetic field to the vacuum chamber under the drive of a radio frequency power supply to ionize the internal process gas in the vacuum chamber to form a plasma. The RF coil is mounted in a flat plate structure on the side of the dielectric plate away from the vacuum chamber, so that the plasma is evenly distributed on the dielectric plate facing the substrate.

2. The flat-plate plasma generating device of the batch peald device according to claim 1, characterized in that, The distance between the dielectric plate and the grid plate is 40 mm to 200 mm.

3. The flat-plate plasma generating device of the batch-type peald device according to claim 1, wherein, An anti-fouling plate is arranged on the inner wall of the vacuum chamber to prevent the plasma from etching the metal wall.

4. The flat-plate plasma generating device of the batch-type peald device according to claim 1, wherein, The grid plate has a dense round hole structure or a strip-shaped square hole structure.

5. The flat-plate plasma generating device of the batch-type peald device according to claim 1, characterized in that, It further includes an intake pipeline, and the intake pipeline forms an annular distribution structure in the vacuum chamber to improve the uniformity of the gas in the chamber.

6. The flat-plate plasma generating device of the batch-type peald device according to claim 5, characterized in that, Both ends of the vacuum chamber are provided with chamber flanges, and the intake pipeline enters the vacuum chamber from the chamber flanges.

7. The flat-plate plasma generating device of the batch-type peald device according to claim 1, characterized in that, The grid plate is arranged on the door flange.

8. The flat-plate plasma generating device of the batch-type peald device according to claim 1, characterized in that, The RF coil is connected to a radio frequency power supply.

9. The flat-plate plasma generating device of the batch-type peald device according to claim 1, characterized in that, The RF coil presents a spiral and centrosymmetric structure on the plane of the dielectric plate.

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