Pretreatment device for detecting trace metal impurities in low-boiling-point silane

Abstract

The utility model discloses a pretreatment device for detecting trace metal impurities in low-boiling-point silane. The pretreatment device comprises a base (1), a cup hole (11) is formed in the base (1), the base (1) and the top cover (2) are embedded to form a sealed space, a pipeline (23) is arranged in the top cover (2), a gas rising channel (24) is formed in the side, close to the base (1), of the pipeline (23), and the gas rising channel (24) corresponds to the cup hole (11) in position; an air inlet hole (21) and an air outlet hole (22) are formed in two sides of the top cover (2) and are communicated with the pipeline (23); the tail end of the air outlet hole (22) is connected with a condensation pipe (3), and a collection beaker (4) is placed at the tail end of the condensation pipe (3).

Description

Technical Field

[0001] The utility model relates to the field of chemical analysis, in particular to a pretreatment device for detecting trace metal impurities in low-boiling silanes. Background Art

[0002] In the semiconductor industry and the microelectronics field, the detection of trace metal impurities in silane substances is crucial. However, too high a silicon substrate can cause instrument contamination. When the existing pretreatment devices are used to process low-boiling silanes, some methods cannot completely eliminate the silicon substrate. Some methods have problems such as uneven heating and gas leakage, which affect the accuracy and efficiency of detection. Therefore, it is necessary to introduce pretreatment technology to effectively and stably remove the silicon substrate in order to achieve the detection of trace metal impurities in silane substances.

[0003] The main function of the pretreatment device is to remove the silicon substrate in the silane by heating and evaporating the solution. Since the organic components in the main components of electronic-grade low-boiling silanes are single and generally have a boiling point below 100°C, it is very easy to evaporate these solutions to dryness. Then, by adding electronic-grade hydrofluoric acid solution, without introducing metal impurities, the reaction of hydrofluoric acid with silane substances to generate SiF4 can easily evaporate the solution again, thus completely removing the silicon substrate. Summary of the Utility Model

[0004] In order to solve the problem of instrument contamination caused by too high a silicon substrate, the utility model provides a pretreatment device for detecting trace metal impurities in low-boiling silanes, which has a simple structure, is easy to operate, has uniform heating, and good sealing performance. The device includes a base, a top cover, a condenser tube, and a collection beaker; the base is provided with a cup hole, the base and the top cover are fitted to form a sealed space, a pipeline is arranged inside the top cover, a gas rising channel is opened on one side of the pipeline close to the base, and the gas rising channel corresponds to the position of the cup hole; air inlets and air outlets are arranged on both sides of the top cover and are communicated with the pipeline; the end of the air outlet is connected to the condenser tube, and the end of the condenser tube is placed with the collection beaker.

[0005] The edges of the base, the top cover, and the gas rising channel are all nested with polytetrafluoroethylene rubber, which plays a role in support, buffering, and sealing.

[0006] The gas rising channel protrudes from the lower surface of the top cover, the cup hole is fitted with the gas rising channel, and the inner diameter of the cup hole is slightly larger than the outer diameter of the gas rising channel, so that the gas only flows in the pipeline.

[0007] The base, the top cover, the condenser tube, the collection beaker, the cup hole, the air inlet, the air outlet, the pipeline, the gas rising channel, and the beaker placed in the cup hole are all made of polytetrafluoroethylene material.

[0008] The gas rising channel is perpendicular to the pipeline.

[0009] The condenser tube is fixed by a bracket.

[0010] Inside the base, there is also an electric heating plate that can control the heating temperature and time, and the surface of the electric heating plate is wrapped with polytetrafluoroethylene material.

[0011] The pipeline has 3 or more parallel branches in parallel, and each branch is evenly provided with 3 or more gas rising channels, and the connecting line direction of the air inlet hole and the air outlet hole is parallel to the branch direction.

[0012] The number of cup holes is the same as that of the gas rising channels and they are in corresponding positions.

[0013] The gas introduced through the air inlet hole is high-purity argon.

[0014] Compared with the prior art, the pretreatment device of the present utility model has the following advantages:

[0015] 1. The heating is uniform, avoiding damage to the sample due to local overheating.

[0016] 2. The sealing performance is good, reducing the escape of gas and improving the accuracy of detection.

[0017] 3. The design is compact, and it can process 9 or more samples at a time, with simple operation and improved pretreatment efficiency. Description of the Drawings

[0018] Figure 1 Schematic diagram of the pretreatment device of the present utility model.

[0019] Figure 2 Schematic diagram of the base: (a) top view, (b) sectional view A-A.

[0020] Figure 3 Schematic diagram of the top cover: (a) bottom view, (b) sectional view B-B.

[0021] Figure 4 Schematic diagram of the top cover being turned over 180° up and down.

[0022] Explanation of the marks in the figure: base 1, top cover 2, condenser tube 3, collection beaker 4, bracket 5, cup hole 11, air inlet hole 21, air outlet hole 22, pipeline 23, gas rising channel 24. Detailed Embodiments

[0023] The following will describe the implementation plan of the present utility model in detail in combination with embodiments. The following embodiments are only used to illustrate the present utility model and should not be regarded as limiting the scope of the present utility model.

[0024] Embodiment 1

[0025] A pretreatment device for detecting trace metal impurities in low-boiling silanes, comprising a base 1; the base 1 is provided with a cup hole 11, and the base 1 and the top cover 2 are fitted together to form a sealed space. Inside the top cover 2, there is a pipeline 23, and a gas rising channel 24 is opened on one side of the pipeline 23 close to the base 1. The gas rising channel 24 corresponds to the position of the cup hole 11; air inlets 21 and air outlets 22 are provided on both sides of the top cover 2 and are communicated with the pipeline 23; the end of the air outlet 22 is connected to a condenser 3, and a collection beaker 4 is placed at the end of the condenser 3.

[0026] The edges of the base 1, the top cover 2, and the gas rising channel 24 are all nested with polytetrafluoroethylene rubber, which plays a role in support, buffering, and sealing.

[0027] The gas rising channel 24 protrudes from the lower surface of the top cover 2, and the cup hole 11 is fitted with the gas rising channel 24. The inner diameter of the cup hole 11 is slightly larger than the outer diameter of the gas rising channel 24, so as to keep the gas flowing only in the pipeline.

[0028] The base 1, the top cover 2, the condenser 3, the collection beaker 4, the cup hole 11, the air inlet 21, the air outlet 22, the pipeline 23, the gas rising channel 24, and the beaker placed in the cup hole 11 are all made of polytetrafluoroethylene.

[0029] The gas rising channel 24 is perpendicular to the pipeline 23.

[0030] The condenser 3 is fixed by a bracket 5.

[0031] An electric heating plate capable of controlling the heating temperature and time is also installed inside the base 1, and the surface of the electric heating plate is wrapped with polytetrafluoroethylene.

[0032] The pipeline 23 has 3 or more parallel branches, and 3 or more gas rising channels 24 are evenly opened on each branch. The connection direction of the air inlet 21 and the air outlet 22 is parallel to the branch direction.

[0033] The cup holes 11 and the gas rising channels 24 are the same in number and corresponding in position.

[0034] The gas introduced through the air inlet 21 is high-purity argon.

[0035] Example 2

[0036] The device of Example 1 is adopted, wherein the pipeline 23 has 3 parallel branches, and 3 gas rising channels 24 are evenly opened on each branch, and 9 cup holes 11 are provided.

[0037] Place the sample to be tested into the cup hole 11 of the base 1, cover the top cover 2 onto the base 1, and the cup hole 11 is fitted with the gas rising channel 24 to achieve airtightness. Set the temperature and time of the heating plate to heat the sample to be tested, and at the same time, introduce high-purity argon gas at the air inlet 21. The gas generated by heating the sample to be tested enters the pipeline 23 through the gas rising channel 24 and flows along the Figure 3 dotted line direction to the air outlet 22, and then flows into the condenser 3. After the gas is condensed, it flows into the collecting beaker 4 containing the alkali solution for alkali solution absorption. After the solution of the sample to be tested is evaporated to dryness, electronic-grade hydrofluoric acid is added, and after evaporation to dryness again, the pretreatment of removing the silicon substrate from the sample is completed.

Claims

1. A pretreatment device for detecting trace metal impurities in low-boiling-point silanes, characterized in that, It includes a base (1); the base (1) is provided with a cup hole (11). The base (1) and the top cover (2) are fitted together to form a sealed space. Inside the top cover (2), there is a pipeline (23). On one side of the pipeline (23) close to the base (1), there is a gas rising channel (24), and the gas rising channel (24) corresponds to the position of the cup hole (11). On both sides of the top cover (2), there are air inlet holes (21) and air outlet holes (22), which are communicated with the pipeline (23). The end of the air outlet hole (22) is connected to a condenser tube (3), and the end of the condenser tube (3) is placed with a collecting beaker (4).

2. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein The gas rising channel (24) protrudes from the lower surface of the top cover (2), and the cup hole (11) is fitted with the gas rising channel (24). The inner diameter of the cup hole (11) is slightly larger than the outer diameter of the gas rising channel (24).

3. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, characterized in that, The edges of the base (1), the top cover (2) and the gas rising channel (24) are nested with polytetrafluoroethylene rubber.

4. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein, The base (1), the top cover (2), the condenser tube (3), the collecting beaker (4), the cup hole (11), the air inlet hole (21), the air outlet hole (22), the pipeline (23), and the gas rising channel (24) are all made of polytetrafluoroethylene material.

5. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein, The gas rising channel (24) is perpendicular to the pipeline (23).

6. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, characterized in that, The condenser tube (3) is fixed by a bracket (5).

7. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein, Inside the base (1), there is also an electric hot plate that can control the heating temperature and time.

8. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein The pipeline (23) has 3 or more parallel and parallel branch paths. On each branch path, there are 3 or more gas rising channels (24) evenly opened. The connecting direction of the air inlet hole (21) and the air outlet hole (22) is parallel to the branch path direction.

9. The pretreatment device for detecting trace metal impurities in low-boiling silane according to claim 1, wherein The number of the cup holes (11) is the same as that of the gas rising channels (24) and their positions correspond to each other.

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