Chemical vapor deposition equipment
By adopting an adjustable upper electrode structure and split diffusion plate design in chemical vapor deposition equipment, the problem of insufficient adjustment of coating parameters is solved, and the improvement of coating quality and convenience of equipment maintenance is achieved.
Patent Information
- Application Number
- CN202422502281.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-15
- Publication Date
- 2025-08-01
- Estimated Expiration
- 2034-10-15
AI Technical Summary
The distance between the electrode and the glass substrate on existing chemical vapor deposition equipment is fixed, and the convenience of adjusting the coating parameters is insufficient, which limits the adjustment of coating quality.
Adopting an adjustable upper electrode structure, including a diffusion plate and a radio frequency end plate, the vertical position of the diffusion plate is adjusted through the driving mechanism, the number of controllable changes in the coating parameters is increased, and the diffusion plate is split into multiple daughter plates for easy maintenance.
It improves the convenience and uniformity of coating quality adjustment, extends the maintenance cycle of the equipment, and reduces the structural bearing capacity and power consumption of the driving mechanism.
Smart Images
Figure CN223176201U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of display device manufacturing, in particular to a chemical vapor deposition device. Background Art
[0002] With the development of semiconductor technology, plasma enhanced chemical vapor deposition (PECVD) devices are increasingly widely developed and used. In this device, two mutually parallel and opposite electrode plates are placed in a vacuum environment, one of the electrode plates is connected to a radio frequency (RF) power supply, and the other electrode plate is grounded. A radio frequency electric field is generated between the two electrode plates. The substrate to be film-formed is placed between the two electrode plates. When the process gas to be film-formed enters between the two electrode plates, it is excited into plasma under the action of the radio frequency electric field. The plasma adsorbs on the surface of the substrate or reacts with the surface of the substrate to form a thin film on the surface of the substrate. Factors such as the distance between the upper and lower electrodes, gas flow rate, radio frequency electric field power, and process temperature may all have an important impact on the quality of the finally formed thin film.
[0003] Refer to Figure 1 As shown, an existing chemical vapor deposition device includes a deposition chamber 1′, an upper electrode 2′, and a lower electrode 3′. A deposition chamber 11′ for accommodating a glass substrate 4′ is provided in the deposition chamber 1′. The upper electrode 2′ and the lower electrode 3′ are arranged at intervals in the deposition chamber 11′. The glass substrate 4′ is placed on the lower electrode 3′. The upper electrode 2′ is fixed to the deposition chamber 1′. The reaction chamber 21′ in the upper electrode 2′ is communicated with the external process gas to be film-formed through a connecting pipe 5′. The process gas to be film-formed in the reaction chamber 21′ is ionized into plasma and then diffuses into the deposition chamber 11′ to coat the glass substrate 4′.
[0004] The existing technology has the following deficiencies: The coating thickness requirements for glass substrates 4′ with different production requirements are different. Therefore, when producing glass substrates 4′, corresponding coating parameter adjustments are required. However, the current upper electrode 2′ is fixed to the deposition chamber 1′, and the distance between the upper electrode 2′ and the glass substrate 4′ is fixed. As a result, only by controlling the gas flow rate, radio frequency electric field power, etc., can the coating parameters be adjusted. The controllable coating parameters are few, which limits the convenience of adjusting the coating quality of the chemical vapor deposition device. Summary of the Utility Model
[0005] The purpose of the utility model is to provide a chemical vapor deposition device, which has a simple structure and the distance between its upper electrode and lower electrode can be adjusted to ensure the convenience of adjusting the coating environment of the workpiece to be coated.
[0006] To achieve this purpose, the utility model adopts the following technical solutions:
[0007] Provided is a chemical vapor deposition device, including a vacuum chamber, an upper electrode, a lower electrode and a driving mechanism. The inner cavity of the vacuum chamber is a vacuum inner cavity. The upper electrode and the lower electrode are arranged at intervals in the vertical direction in the vacuum inner cavity. The upper electrode is used to connect a radio frequency power supply. The lower electrode is grounded and used to support a workpiece to be plated. The upper electrode includes a radio frequency end plate and a diffusion plate distributed at intervals in the vertical direction. The diffusion plate is located between the radio frequency end plate and the lower electrode, and a diffusion cavity is formed at an interval between the diffusion plate and the radio frequency end plate. The diffusion cavity is communicated with an external reaction gas input mechanism. A plurality of diffusion holes are arranged at intervals on the diffusion plate. The diffusion holes communicate the diffusion cavity and the vacuum inner cavity. The driving mechanism is arranged on the vacuum chamber, and the driving end of the driving mechanism is in transmission connection with the diffusion plate to be able to drive the diffusion plate to move and adjust in the vertical direction.
[0008] As a preferred scheme of the chemical vapor deposition device, the diffusion plate is spliced by a plurality of diffusion sub-plates. A plurality of the diffusion holes are arranged at intervals on each diffusion sub-plate. The driving mechanism includes a plurality of driving parts, and each driving part is correspondingly connected to one diffusion sub-plate.
[0009] As a preferred scheme of the chemical vapor deposition device, in the horizontal direction, the projections of adjacent two diffusion sub-plates at least partially overlap.
[0010] As a preferred scheme of the chemical vapor deposition device, on one of the two adjacent surfaces of two adjacent diffusion sub-plates that are adjacent to each other, a guiding part is convexly arranged, and on the other surface, a guiding groove is concavely arranged. The length of the guiding groove extends in the vertical direction. The guiding part is inserted into the guiding groove, and the guiding part is in sliding fit with the groove wall of the guiding groove.
[0011] As a preferred scheme of the chemical vapor deposition device, the guiding groove has a first groove wall and a second groove wall arranged in the vertical direction. The guiding part is slidably arranged between the first groove wall and the second groove wall.
[0012] As a preferred scheme of the chemical vapor deposition device, the upper electrode further includes an enclosure wall. The enclosure wall is detachably connected to the radio frequency end plate. The enclosure wall is sleeved on the outer periphery of the radio frequency end plate and the diffusion plate. The inner side walls of the radio frequency end plate, the diffusion plate and the enclosure wall enclose to form the diffusion cavity.
[0013] As a preferred scheme of the chemical vapor deposition device, the bottom end surface of the diffusion plate is flush with the bottom end surface of the enclosure wall or the diffusion plate partially protrudes from the bottom end surface of the enclosure wall.
[0014] As a preferred solution for chemical vapor deposition equipment, the inner side wall of the surrounding wall is provided with a bearing portion protruding in an annular manner around its own central axis, and the bearing portion is adjacent to the top surface of the surrounding wall, and the bearing portion is detachably connected to the top surface of the RF end plate.
[0015] As a preferred solution of the chemical vapor deposition equipment, a boss is protruding from the inner side wall of the vacuum chamber, the surrounding wall abuts against the boss, and an insulating pad is provided between the surrounding wall and the boss.
[0016] As a preferred solution for the chemical vapor deposition equipment, the upper electrode also includes a current balancing plate, which is arranged between the RF end plate and the diffusion plate. The current balancing plate is detachably connected to the RF end plate, and a plurality of current balancing holes are arranged at intervals on the current balancing plate.
[0017] The beneficial effects of the present invention are as follows: by setting up a transmission connection between the driving mechanism and the diffusion plate, the position of the diffusion plate in the vertical direction can be adjusted, thereby adjusting the distance between the diffusion plate and the workpiece to be plated on the lower electrode, increasing the number of controllable changes in the coating parameters, thereby improving the convenience of adjusting the coating quality of the chemical vapor deposition equipment; by splitting the upper electrode into the RF end plate and the diffusion plate, the driving mechanism only drives the diffusion plate to achieve the adjustment of the distance between the upper electrode and the lower electrode, reducing the structural bearing capacity of the driving end of the driving mechanism, thereby ensuring the connection stability of the driving end of the driving mechanism. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The present invention will be described in further detail below with reference to the accompanying drawings and embodiments.
[0019] Figure 1 It is a structural schematic diagram of an existing chemical vapor deposition device;
[0020] Figure 2 It is a structural schematic diagram of a chemical vapor deposition device according to an embodiment of the present utility model;
[0021] Figure 3 yes Figure 2 An enlarged schematic diagram of point A;
[0022] Figure 4 yes Figure 2 An enlarged schematic diagram of point B.
[0023] Figure 1 middle:
[0024] 1′, deposition chamber; 11′, deposition chamber; 2′, upper electrode; 21′, reaction chamber; 3′, lower electrode; 4′, glass substrate; 5′, connecting tube.
[0025] Figures 2 to 4 middle:
[0026] 100. Workpiece to be plated;
[0027] 1. Vacuum chamber; 11. Vacuum inner cavity; 2. Upper electrode; 21. RF end plate; 22. Diffusion plate; 221. Diffusion hole; 222. Diffusion sub - plate; 223. Guide part; 224. Guide groove; 2241. First groove wall; 2242. Second groove wall; 23. Diffusion cavity; 3. Lower electrode; 4. Driving mechanism; 41. Driving part; 5. Enclosure wall; 51. Bearing part; 6. Boss; 7. Insulating pad; 8. Current - equalizing plate; 81. Current - equalizing hole. Detailed implementation mode
[0028] Referring to the embodiments described in detail below with reference to the accompanying drawings, the advantages and features of the present utility model and the methods for realizing them will become apparent. However, the present utility model is not limited to the embodiments disclosed below, but can be implemented in various different forms. The provision of these embodiments is only for the purpose of completing the disclosure of the present utility model and enabling those skilled in the art to fully understand the scope of the present utility model, and the present utility model is only defined by the scope of the claims. The same reference numerals represent the same components throughout the specification.
[0029] Hereinafter, the present utility model will be described in detail with reference to the drawings.
[0030] As Figures 2 to 4 shown, the chemical vapor deposition equipment of the embodiment of the present utility model includes a vacuum chamber 1, an upper electrode 2, a lower electrode 3, and a driving mechanism 4. The inner cavity of the vacuum chamber 1 is a vacuum inner cavity 11. The upper electrode 2 and the lower electrode 3 are arranged at intervals in the vertical direction in the vacuum inner cavity 11 (the vertical direction is the Y - direction shown in the figure). The upper electrode 2 is used to connect to an RF power supply, the lower electrode 3 is grounded and used to support the workpiece 100 to be plated. The upper electrode 2 includes an RF end plate 21 and a diffusion plate 22 that are distributed at intervals in the vertical direction. The diffusion plate 22 is located between the RF end plate 21 and the lower electrode 3, and a diffusion cavity 23 is formed at an interval between the diffusion plate 22 and the RF end plate 21. The diffusion cavity 23 is communicated with an external reaction gas input mechanism. A plurality of diffusion holes 221 are arranged at intervals on the diffusion plate 22, and the diffusion holes 221 communicate the diffusion cavity 23 and the vacuum chamber inner cavity 11. The driving mechanism 4 is arranged on the vacuum chamber 1, and the driving end of the driving mechanism 4 is in transmission connection with the diffusion plate 22 to be able to drive the diffusion plate 22 to move and adjust in the vertical direction.
[0031] It can be understood that by setting the driving mechanism 4 to be in transmission connection with the diffusion plate 22, the position of the diffusion plate 22 in the vertical direction can be adjusted, so as to adjust the distance between the diffusion plate 22 and the workpiece 100 to be plated on the lower electrode 3, increasing the number of controllable changes in the coating parameters, thereby improving the convenience of adjusting the coating quality of the chemical vapor deposition equipment; by splitting the upper electrode 2 into the radio frequency end plate 21 and the diffusion plate 22, the driving mechanism 4 only drives the diffusion plate 22 to realize the adjustment of the distance between the upper electrode 2 and the lower electrode 3. Compared with the structure in which the driving mechanism 4 drives the entire upper electrode 2 to move, the structural bearing capacity of the driving end of the driving mechanism 4 is effectively reduced, thus ensuring the connection stability of the driving end of the driving mechanism 4. Moreover, the reduction of the structural bearing capacity can reduce the driving force and power consumption of the driving mechanism 4, saving resources.
[0032] Exemplarily, after the external reaction gas enters the diffusion chamber 23, it is excited into plasma under the action of the radio frequency electric field when the radio frequency end plate 21 is energized. The plasma is dispersed onto the workpiece 100 to be plated through the diffusion holes 221 of the diffusion plate 22. In this embodiment, the workpiece 100 to be plated is a glass substrate to realize the deposition coating of the glass substrate. Therefore, by driving the diffusion plate 22 to move closer to the glass substrate by the driving mechanism 4, the distance between the diffusion plate 22 and the glass substrate decreases, and the distance between the plasma and the glass substrate decreases. The energy and concentration of the plasma are relatively high, so the coating thickness of the glass substrate is relatively thick. On the contrary, by driving the diffusion plate 22 to move away from the glass substrate by the driving mechanism 4, the distance between the diffusion plate 22 and the glass substrate increases, and the distance between the plasma and the glass substrate increases. The energy and concentration of the plasma are consumed during the adsorption process to the glass substrate. At this time, the coating thickness of the glass substrate is relatively thin.
[0033] Furthermore, as Figure 2As shown, the diffusion plate 22 includes a plurality of diffusion sub-plates 222 spliced together, each diffusion sub-plate 222 is provided with a plurality of diffusion holes 221 at intervals, and the driving mechanism 4 includes a plurality of driving members 41 , each driving member 41 correspondingly connected to a diffusion sub-plate 222 . On the one hand, the diffusion holes 221 may become clogged after a period of use, requiring the diffusion plate 22 to be disassembled for replacement and cleaning. Therefore, by splitting the diffusion plate 22 into multiple diffusion sub-plates 222, maintenance convenience due to local diffusion hole 221 blockage is improved, requiring only the replacement of the diffusion sub-plates 222, which is convenient and quick. On the other hand, after long-term use, the diffusion plate 22 will deform to a certain extent due to its own gravity, which may easily affect the flatness of the coating in the later stage. However, raising and lowering the entire diffusion plate 22 can only change the coating thickness. Therefore, by splitting the diffusion plate 22 into multiple diffusion sub-plates 222 and using the drive member 41 to independently control each diffusion sub-plate 222, the height of each diffusion sub-plate 222 can be adjusted. This ensures that the plasma adheres evenly to the glass substrate, resulting in a high degree of coating flatness, effectively improving the coating quality of the chemical vapor deposition equipment and extending the equipment maintenance cycle. It should be noted that the drive member 41 can be a linear drive such as a pneumatic cylinder, an electric cylinder, or an oil cylinder.
[0034] Furthermore, along the horizontal direction (the horizontal direction is the X direction in the figure), the projections of two adjacent diffusion sub-plates 222 are at least partially overlapped. In other words, the two adjacent diffusion sub-plates 222 are not spaced apart along the vertical direction, thereby ensuring the matching accuracy between the two adjacent diffusion sub-plates 222, preventing plasma from directly entering the inner cavity of the vacuum chamber 1 through the gap between the two adjacent diffusion sub-plates 222, and effectively ensuring the uniformity of the coating on the glass substrate.
[0035] Alternatively, as Figure 4 As shown, two adjacent diffuser sub-plates 222 have two adjacent surfaces with a protruding guide portion 223 on one side and a recessed guide groove 224 on the other side. The guide groove 224 extends vertically, and the guide portion 223 is inserted into the guide groove 224, and the guide portion 223 and the groove wall of the guide groove 224 are slidably engaged. The coordinated arrangement of the guide portion 223 and the guide groove 224 effectively improves the guiding performance of the movement between the diffuser sub-plates 222, thereby ensuring the precise fit between the diffuser sub-plates 222.
[0036] Preferably, the guide groove 224 has a first groove wall 2241 and a second groove wall 2242 arranged in the vertical direction, and the guide portion 223 is slidably arranged between the first groove wall 2241 and the second groove wall 2242. In other words, the restriction of the guide portion 223 by the first groove wall 2241 and the second groove wall 2242 can prevent the guide portion 223 from escaping from the guide groove 224, thereby avoiding the occurrence of a situation where two adjacent diffusion sub-plates 222 are spaced apart in the vertical direction, and effectively ensuring the splicing accuracy between each diffusion sub-plate 222.
[0037] In some embodiments, such as Figure 2 and Figure 3 shown, the upper electrode 2 further includes a surrounding wall 5. The surrounding wall 5 is detachably connected to the RF end plate 21. The surrounding wall 5 is sleeved on the outer peripheries of the RF end plate 21 and the diffusion plate 22. The inner side walls of the RF end plate 21, the diffusion plate 22 and the surrounding wall 5 enclose a diffusion cavity 23. The inner cavity of the surrounding wall 5 and the RF end plate 21 and the diffusion plate 22 arranged at intervals in the vertical direction enclose a closed diffusion cavity 23, which has a simple structure and is convenient for production, disassembly and assembly. Exemplarily, through holes are formed on the outer peripheral side of the surrounding wall 5, threaded holes are formed on the RF end plate 21, and bolts pass through the through holes and are screwed into the threaded holes to connect the surrounding wall 5 to the RF end plate 21. The threaded connection method has a firm connection and is convenient for disassembly and assembly.
[0038] Furthermore, the diffusion plate 22 is flush with the bottom end surface of the surrounding wall 5 or the diffusion plate 22 partially protrudes from the bottom end surface of the surrounding wall 5, that is, to prevent the diffusion plate 22 from shrinking into the surrounding wall 5, reduce the shielding effect of the surrounding wall 5 on the plasma flowing out of the diffusion plate 22, and improve the fluidity of the plasma after being dispersed from the diffusion plate 22.
[0039] Optionally, a bearing portion 51 is annularly protruded on the inner side wall of the surrounding wall 5 around its central axis, and the bearing portion 51 is adjacent to the top end surface of the surrounding wall 5. The bearing portion 51 is detachably connected to the top end surface of the RF end plate 21. Through the arrangement of the bearing portion 51, on the one hand, the contact area between the surrounding wall 5 and the RF end plate 21 can be increased, and the connection sealing performance between the surrounding wall 5 and the RF end plate 21 can be improved; on the other hand, the surrounding wall 5 is supported on the RF end plate 21 through the bearing portion 51, that is, most of the gravity of the surrounding wall 5 is borne on the RF end plate 21 by the bearing portion 51, reducing the influence of the gravity of the surrounding wall 5 on the side surface of the RF end plate 21 and improving the connection stability between the surrounding wall 5 and the RF end plate 21.
[0040] Still further, a boss 6 is protruded on the inner side wall of the vacuum chamber 1. The surrounding wall 5 abuts against the boss 6, and an insulating pad 7 is arranged between the surrounding wall 5 and the boss 6. That is, the bottom of the surrounding wall 5 abuts against the top end surface of the boss 6 through the insulating pad 7. Such an arrangement can support the surrounding wall 5 and the RF end plate 21 connected to the surrounding wall 5 by the boss 6, effectively improving the structural stability of the surrounding wall 5 and the RF end plate 21 and reducing the situation of collapse due to its own gravity. Of course, through the arrangement of the insulating pad 7, the electric conduction of the RF end plate 21 by the surrounding wall 5 can be effectively prevented from being conducted to the vacuum chamber 1, improving the use safety of the chemical vapor deposition equipment.
[0041] In other embodiments, the upper electrode 2 further includes a current equalizing plate 8. The current equalizing plate 8 is disposed at intervals between the radio frequency end plate 21 and the diffusion plate 22. The current equalizing plate 8 is detachably connected to the radio frequency end plate 21, and a plurality of current equalizing holes 81 are disposed at intervals on the current equalizing plate 8. Through the arrangement of the current equalizing plate 8, the input external reaction gas can pass through the current equalizing holes 81 and be dispersed into the diffusion chamber 23 for reaction, and then be uniformly diffused outside the diffusion chamber 23 through the diffusion holes 221 of the diffusion plate 22, further improving the dispersion uniformity of the reactants, thereby improving the coating uniformity. Moreover, the current equalizing plate 8 is detachably arranged on the radio frequency end plate 21 by bolts, which facilitates the disassembly, assembly and maintenance of the current equalizing plate 8.
[0042] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic characteristics of the present invention. Therefore, it should be understood that the above embodiments are exemplary in all aspects and not restrictive.
Claims
1. A chemical vapor deposition device, characterized in that, It includes a vacuum chamber, an upper electrode, a lower electrode and a driving mechanism. The inner cavity of the vacuum chamber is a vacuum inner cavity. The upper electrode and the lower electrode are arranged at intervals in the vertical direction in the vacuum inner cavity. The upper electrode is used to connect to a radio frequency power supply. The lower electrode is grounded and used to support the workpiece to be plated. The upper electrode includes a radio frequency end plate and a diffusion plate that are distributed at intervals in the vertical direction. The diffusion plate is located between the radio frequency end plate and the lower electrode, and a diffusion cavity is formed at an interval between the diffusion plate and the radio frequency end plate. The diffusion cavity is communicated with an external reaction gas input mechanism. A plurality of diffusion holes are arranged at intervals on the diffusion plate. The diffusion holes communicate the diffusion cavity and the vacuum inner cavity. The driving mechanism is arranged on the vacuum chamber, and the driving end of the driving mechanism is in transmission connection with the diffusion plate to be able to drive the diffusion plate to move and adjust in the vertical direction.
2. The chemical vapor deposition apparatus according to claim 1, wherein The diffusion plate is formed by splicing a plurality of diffusion sub-plates. A plurality of the diffusion holes are arranged at intervals on each diffusion sub-plate. The driving mechanism includes a plurality of driving parts, and each driving part is correspondingly connected to one diffusion sub-plate.
3. The chemical vapor deposition apparatus according to claim 2, characterized in that, In the horizontal direction, the projections of two adjacent diffusion sub-plates at least partially overlap.
4. The chemical vapor deposition apparatus according to claim 2, characterized in that, On one of the two mutually adjacent surfaces of two adjacent diffusion sub-plates, a guiding part is convexly arranged, and on the other surface, a guiding groove is concavely arranged. The length of the guiding groove extends in the vertical direction. The guiding part is inserted into the guiding groove, and the guiding part is in sliding fit with the groove wall of the guiding groove.
5. The chemical vapor deposition apparatus according to claim 4, wherein The guiding groove has a first groove wall and a second groove wall arranged in the vertical direction. The guiding part is slidably arranged between the first groove wall and the second groove wall.
6. The chemical vapor deposition apparatus according to any one of claims 1-5, characterized in that, The upper electrode further includes a surrounding wall. The surrounding wall is detachably connected to the radio frequency end plate. The surrounding wall sleeves the outer peripheries of the radio frequency end plate and the diffusion plate. The inner side walls of the radio frequency end plate, the diffusion plate and the surrounding wall enclose the diffusion cavity.
7. The chemical vapor deposition apparatus according to claim 6, wherein The bottom end surface of the diffusion plate is flush with the bottom end surface of the surrounding wall or the diffusion plate partially protrudes from the bottom end surface of the surrounding wall.
8. The chemical vapor deposition apparatus according to claim 6, wherein, The inner side wall of the surrounding wall is annularly convexly provided with a bearing part around its central axis, and the bearing part is adjacent to the top end surface of the surrounding wall. The bearing part is detachably connected to the top end surface of the radio frequency end plate.
9. The chemical vapor deposition apparatus according to claim 6, wherein A boss is protrudingly arranged on the inner side wall of the vacuum chamber. The surrounding wall abuts against the boss, and an insulating pad is arranged between the surrounding wall and the boss.
10. The chemical vapor deposition device according to any one of claims 1-5, characterized in that, The upper electrode further includes a current equalizing plate. The current equalizing plate is arranged at intervals between the radio frequency end plate and the diffusion plate. The current equalizing plate is detachably connected to the radio frequency end plate. A plurality of current equalizing holes are arranged at intervals on the current equalizing plate.