Flow guide device and single crystal furnace
By providing a flow guide device on the inner side wall of the bottom of the single crystal furnace, including the first cylinder, the second cylinder and the insulation felt layer, the problem of insufficient insulation performance of the air guide cylinder is solved, the insulation performance is improved and the thermal field stability is enhanced, and the power consumption of the single crystal furnace is reduced.
Patent Information
- Application Number
- CN202422435595.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-09
- Publication Date
- 2025-08-01
- Estimated Expiration
- 2034-10-09
AI Technical Summary
The thermal field air cylinder of the existing single crystal furnace is insufficient in thermal insulation performance, resulting in serious heat loss, increasing power consumption and affecting the stability of the heat field.
A flow guide device is designed, including a first cylinder, a second cylinder and a thermal insulation felt layer. By setting a flow guide channel and a mounting cavity on the inner side wall of the bottom of the single crystal furnace, the thermal insulation feel layer is used to improve the insulation performance, and enhance the air flow control through a progressively expanded structure and shading edge.
It improves the insulation performance of the single crystal furnace, reduces power consumption, enhances the stability of the heat field, provides stable environmental conditions for single crystal growth, and extends the service life of the equipment.
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Figure CN223176260U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a technical field for crystal preparation, and in particular to a flow guide device and a single crystal furnace. Background Art
[0002] In the thermal field of a single crystal furnace, the gas guide is one of the key components. Its main function is to guide the airflow, maintain the stability of the thermal field, and ensure the smooth progress of the single crystal growth process. A good gas guide is of great significance for improving the quality of single crystals and reducing energy consumption.
[0003] At present, the conventional single crystal furnace thermal field air guide tube has a simple structure; in actual application, the air guide tube only plays the role of guiding the airflow, and the heat preservation effect is poor. The poor heat preservation effect of the air guide tube will cause a large amount of heat loss at the bottom of the heat field. This not only increases the power consumption of the single crystal furnace, but also affects the stability of the heat field, and thus has an adverse effect on the growth quality of the single crystal. Specifically, it manifests as follows: (1) Severe heat loss: Due to insufficient heat preservation performance, a large amount of heat is dissipated from the bottom of the heat field, which increases the energy required to maintain the heat field. (2) Increased power consumption: In order to compensate for the heat loss, the single crystal furnace needs to consume more energy, resulting in increased production costs. (3) Affected thermal field stability: Uneven heat loss will destroy the stability of the heat field and affect the environmental conditions for single crystal growth.
[0004] Therefore, there is an urgent need for a flow guide device and a single crystal furnace to solve the technical problems existing in the prior art to a certain extent. Utility Model Content
[0005] The purpose of this application is to provide a flow guide device and a single crystal furnace, which improve the thermal insulation performance to a certain extent, reduce power consumption, and improve the stability of the thermal field.
[0006] The present application provides a flow guide device, which is arranged on the inner side wall of the bottom of a single crystal furnace; it is characterized in that the flow guide device includes a first cylinder, a second cylinder and a thermal insulation felt layer;
[0007] The first cylinder is formed with a flow guide channel along its axial direction;
[0008] The second cylinder is sleeved on the first cylinder, and a mounting cavity is formed between the second cylinder and the first cylinder;
[0009] The thermal insulation felt layer is arranged in the installation cavity to improve the thermal insulation performance of the guide device.
[0010] In the above technical solution, further, the inner side wall of the second cylinder is sequentially formed with a first section, a second section and a third section along the axial direction of the second cylinder;
[0011] The first section and the second section are cylindrical, and the diameter of the first section is larger than that of the second section, so that the first section and the second section form a stepped structure, and a stepped surface is formed between the first section and the second section;
[0012] The third section has a gradually expanding structure along the direction from the first section to the second section, so that the third section has an air flow outlet with a gradually expanding structure along the direction from the first section to the second section.
[0013] In the above technical solution, further, the first end of the second cylinder abuts against the stepped surface, and an installation cavity is formed between the second cylinder and the first section.
[0014] In the above technical solution, further, a shielding edge is provided between the second end of the second cylinder facing away from the air flow outlet and the end of the first cylinder facing away from the air flow outlet;
[0015] The shielding edge can seal the heat insulation adhesive layer in the installation cavity.
[0016] In the above technical solution, further, the inner diameter of the second cylinder is the same as the diameter of the second section;
[0017] An air flow inlet communicating with the diversion channel is formed at one end of the second cylinder facing away from the air flow outlet.
[0018] In the above technical solution, further, the heat insulation felt layer is provided with multiple layers, and the multiple heat insulation felt layers are arranged in sequence along the radial direction of the first cylinder.
[0019] In the above technical solution, further, the diameter of the diversion channel is set between 80 - 100 mm.
[0020] This application also provides a single crystal furnace, including a furnace body, a heat insulation seat, a guard plate pressing piece, and the above-mentioned diversion device;
[0021] The heat insulation seat is arranged on the inner side wall of the bottom of the furnace body;
[0022] The guard plate pressing piece covers one side of the heat insulation seat facing the inside of the furnace body; installation holes are provided at corresponding positions on the guard plate pressing piece and the heat insulation seat, and the diversion device is arranged in the installation holes.
[0023] In the above technical solution, further, the shielding edge extends in a direction away from the first cylinder and forms a lapping edge;
[0024] In the above technical solution, further, the lapping edge can lap on the guard plate pressing piece.
[0025] In the above technical solution, further, the protecting plate pressing piece is made of isostatic pressing graphite material or carbon-carbon composite material.
[0026] Compared with the prior art, the present application has the following beneficial effects:
[0027] The present application provides a flow guiding device, which is arranged on the inner side wall of the bottom of a single crystal furnace; characterized in that the flow guiding device includes a first cylinder body, a second cylinder body and a heat preservation felt layer;
[0028] The first cylinder body is formed with a flow guiding channel along its axial direction;
[0029] The second cylinder body is sleeved on the first cylinder body, and an installation cavity is formed between the second cylinder body and the first cylinder body;
[0030] The heat preservation felt layer is arranged in the installation cavity to improve the heat preservation performance of the flow guiding device.
[0031] In summary, the first cylinder body and the second cylinder body provide a support framework for the heat preservation felt layer, so that an efficient heat preservation system is formed among the first cylinder body, the second cylinder body and the heat preservation felt layer, greatly enhancing the heat preservation at the bottom of the single crystal thermal field. In addition, the improvement of the heat preservation performance reduces heat conduction and heat radiation, ensures the temperature stability at the bottom of the thermal field, and provides a more stable environmental condition for single crystal growth. In addition, the installation is convenient and the operation is simple, without complex tools and cumbersome processes, saving time and labor costs.
[0032] The present application also provides a single crystal furnace, which includes a furnace body, a heat preservation seat, a protecting plate pressing piece, and the above-mentioned flow guiding device;
[0033] The heat preservation seat is arranged on the inner side wall of the bottom of the furnace body;
[0034] The protecting plate pressing piece covers the side of the heat preservation seat facing the inside of the furnace body; installation holes are formed at corresponding positions on the protecting plate pressing piece and the heat preservation seat, and the flow guiding device is arranged in the installation holes.
[0035] In summary, the thermal field stability of the single crystal furnace is improved, the uneven heat dissipation is reduced, the risk of thermal field fluctuation is lowered, providing ideal conditions for single crystal growth; in addition, the power consumption is reduced, the heat preservation effect is enhanced, the power consumption of the single crystal furnace is lowered, the service life of the equipment is prolonged, and the maintenance and replacement frequency are reduced.
[0036] The present application also provides a single crystal furnace. The thermal field stability of the single crystal furnace is improved, the uneven heat dissipation is reduced, the risk of thermal field fluctuation is lowered, providing ideal conditions for single crystal growth; in addition, the power consumption is reduced, the heat preservation effect is enhanced, the power consumption of the single crystal furnace is lowered, the service life of the equipment is prolonged, and the maintenance and replacement frequency are reduced. Description of the Drawings
[0037] To more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0038] Figure 1 Structural schematic diagram of the flow guiding device provided by the present application from the first perspective;
[0039] Figure 2 Structural schematic diagram of the flow guiding device provided by the present application from the second perspective;
[0040] Figure 3 Cross-sectional view of the flow guiding device provided by the present application;
[0041] Figure 4 Cross-sectional view of the first cylinder body of the flow guiding device provided by the present application;
[0042] Figure 5 Structural schematic diagram of the second cylinder body of the flow guiding device provided by the present application;
[0043] Figure 6 Structural schematic diagram of the single crystal furnace provided by the present application from the first perspective;
[0044] Figure 7 Structural schematic diagram of the single crystal furnace provided by the present application from the second perspective;
[0045] Figure 8 Cross-sectional view of the single crystal furnace provided by the present application;
[0046] Figure 9 Structural schematic diagram of the heat preservation seat in the single crystal furnace provided by the present application.
[0047] Reference numerals: 1 - first cylinder body; 2 - second cylinder body; 3 - heat preservation felt layer; 4 - flow guiding channel; 5 - installation cavity; 6 - first section; 8 - second section; 9 - third section; 10 - step surface; 11 - air flow outlet; 12 - shielding edge; 14 - air flow inlet; 15 - heat preservation seat; 16 - retaining plate pressing piece; 18 - installation hole; 19 - overlapping edge; 20 - flow guiding device. Specific embodiments
[0048] The following specific embodiments are provided to assist the reader in obtaining a comprehensive understanding of the methods, devices, and / or systems described herein. However, after understanding the disclosure of this application, various changes, modifications, and equivalents of the methods, devices, and / or systems described herein will be apparent. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein. Rather, changes that will be apparent after understanding the disclosure of this application may be made, except for operations that must occur in a specific order. In addition, descriptions of features known in the art may be omitted for the sake of clarity and conciseness.
[0049] The features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein are provided only to illustrate some of the many possible ways of implementing the methods, devices, and / or systems described herein that will be apparent after understanding the disclosure of this application.
[0050] Throughout the specification, when an element (such as a layer, region, or substrate) is described as being "on" another element, "connected to" another element, "bonded to" another element, "above" another element, or "covering" another element, it can be directly "on" another element, "connected to" another element, "bonded to" another element, "above" another element, or "covering" another element, or there can be one or more other elements intervening between them. In contrast, when an element is described as being "directly on" another element, "directly connected to" another element, "directly bonded to" another element, "directly above" another element, or "directly covering" another element, there can be no other elements intervening between them.
[0051] As used herein, the term "and / or" includes any one of the listed related items and any combination of any two or more of them.
[0052] Although terms such as "first", "second", and "third" may be used herein to describe various components, components, regions, layers, or parts, these components, components, regions, layers, or parts are not limited by these terms. Rather, these terms are only used to distinguish one component, component, region, layer, or part from another. Thus, the first component, component, region, layer, or part referred to in the examples described herein may also be referred to as the second component, component, region, layer, or part without departing from the teachings of the examples.
[0053] For ease of description, spatial relationship terms such as "above", "upper", "below", and "lower" may be used herein to describe the relationship between one element and another as shown in the accompanying drawings. Such spatial relationship terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is flipped, an element described as "above" or "upper" relative to another element will subsequently be "below" or "lower" relative to the other element. Thus, the term "above" includes both the orientations of "above" and "below" depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the corresponding interpretations of the spatial relationship terms used herein will be made accordingly.
[0054] The terms used herein are for the purpose of describing various examples only and are not intended to limit the disclosure. Unless the context clearly dictates otherwise, the singular forms are also intended to include the plural forms. The terms "comprising", "including", and "having" enumerate the stated features, quantities, operations, components, elements, and / or combinations thereof that exist, but do not preclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.
[0055] Due to manufacturing techniques and / or tolerances, variations in the shapes shown in the accompanying drawings may occur. Thus, the examples described herein are not limited to the specific shapes shown in the accompanying drawings but include changes in shape that occur during manufacturing.
[0056] The features of the examples described herein can be combined in various ways that will be apparent after understanding the disclosure of the present application. In addition, although the examples described herein have a variety of configurations, other configurations are possible, as will be apparent after understanding the disclosure of the present application.
[0057] Example 1
[0058] To solve the problems of insufficient heat insulation performance, high power consumption, and affected thermal field stability of the existing flow guiding device 20 described in the background art, the present application has developed a new type of flow guiding device 20. This flow guiding device 20 has good heat insulation performance, can effectively reduce the heat loss at the bottom of the thermal field, reduce power consumption, and at the same time improve the stability of the thermal field, providing a more ideal environment for single crystal growth. The specific structure of this flow guiding device 20 is described as follows.
[0059] Combined Figures 1-3 As shown, the flow guiding device 20 is arranged on the inner bottom wall of the single crystal furnace; the flow guiding device 20 includes a first cylinder 1, a second cylinder 2, and a heat insulation felt layer 3.
[0060] Specifically, the first cylinder 1 is of a cylinder structure, and a diversion channel 4 is formed along its axial direction.
[0061] Specifically, the second cylinder 2 is sleeved on the first cylinder 1, and an installation cavity 5 is formed between the second cylinder 2 and the first cylinder 1.
[0062] Specifically, the heat insulation felt layer 3 is filled in the installation cavity 5 to improve the heat insulation performance of the diversion device 20. First, preferably, the heat insulation felt layer 3 can be directly filled in the installation cavity 5. There is no connection relationship between the heat insulation felt layer 3 and the first cylinder 1 and the second cylinder 2. As long as the installation cavity 5 is filled with the heat insulation felt layer 3. Second, preferably, the heat insulation felt layer 3 is fixed to the first cylinder 1 and the second cylinder 2 respectively by means of glue. In this way, the stability of the heat insulation felt layer 3 in the installation cavity 5 can be improved.
[0063] During the actual installation process, the heat insulation felt layer 3 is installed inside the second cylinder 2, and then the first cylinder 1 is inserted into the heat insulation felt layer 3.
[0064] In summary, the first cylinder 1 and the second cylinder 2 provide a support framework for the heat insulation felt layer 3, so that an efficient heat insulation system is formed among the first cylinder 1, the second cylinder 2 and the heat insulation felt layer 3, greatly enhancing the heat insulation at the bottom of the single crystal thermal field. In addition, the improvement of the heat insulation performance reduces heat conduction and heat radiation, ensures the stability of the temperature at the bottom of the thermal field, and provides a more stable environmental condition for single crystal growth. In addition, the installation is convenient and the operation is simple, without complex tools and cumbersome processes, saving time and labor costs.
[0065] In this embodiment, specifically, the inner side wall of the second cylinder 2 is sequentially formed with a first section 6, a second section 8 and a third section 9 along the axial direction of the second cylinder 2; combined Figure 4 as shown, and taking the placement angle in Figure 4 as an example, the first section 6, the second section 8 and the third section 9 are connected in sequence along the vertical direction.
[0066] Specifically, the first section 6 and the second section 8 are cylindrical, and the diameter of the first section 6 is larger than that of the second section 8, so that the first section 6 and the second section 8 form a stepped structure, and a step surface 10 is formed between the first section 6 and the second section 8.
[0067] Specifically, the third section 9 is of a gradually expanding structure along the direction from the first section 6 to the second section 8, so that the third section 9 has an air flow outlet 11 of a gradually expanding structure along the direction from the first section 6 to the second section 8. Further, the above-mentioned air flow outlet 11 of a gradually expanding structure can enable the rapid discharge of deposits such as silicon powder and metal.
[0068] In this embodiment, further, combined Figure 3As shown, the first end of the second cylinder body 2 abuts against the step surface 10, and an installation cavity 5 is formed between the second cylinder body 2 and the first section 6.
[0069] In this embodiment, further, in combination with Figure 3 and Figure 5 As shown, a shielding edge 12 is provided between the second end of the second cylinder body 2 facing away from the air flow outlet 11 and the end of the first cylinder body 1 facing away from the air flow outlet 11. The shielding edge 12 can seal the heat insulation adhesive layer in the installation cavity 5. Further, in combination with Figure 3 As shown, the shielding edge 12 is vertically connected to the edge of the first cylinder body 1 away from the air flow outlet 11. Further, the heights of the first cylinder body 1 and the first section 6 of the second cylinder body 2 are equal.
[0070] In this embodiment, further, in combination with Figure 3 As shown, the inner diameter of the second cylinder body 2 is the same as the diameter of the second section 8, so that the inner side walls of the second section 8 of the second cylinder body 2 and the first cylinder body 1 can enclose the same cylinder.
[0071] Specifically, an air flow inlet 14 communicating with the diversion channel 4 is formed at one end of the second cylinder body 2 facing away from the air flow outlet 11.
[0072] In this embodiment, further, in combination with Figure 3 As shown, the heat insulation felt layer 3 is provided with multiple layers, and the multiple layers of heat insulation felt layer 3 are arranged in sequence along the radial direction of the first cylinder body 1.
[0073] Preferably, the heat insulation felt layer 3 is provided with two layers. The two layers of heat insulation felt layer 3 have low thermal conductivity and good heat insulation performance, block heat transfer, and reduce heat loss at the bottom of the thermal field.
[0074] In this embodiment, further, the diameter of the diversion channel 4 is set between 80 - 100 mm. Preferably, the diameter of the diversion channel 4 is 90 mm. Compared with the existing diameter of 12 mm, the diameter of the diversion channel 4 in this application is reduced, thereby increasing the area of the heat radiation isolation surface at the bottom of the thermal field. In the single crystal furnace thermal field system, the heater, the silicon material crucible, and other thermal field components that have absorbed heat radiate part of the heat to the bottom isolation radiation surface, where part of the heat is absorbed and transferred, and the other part of the heat remains in the furnace. The increased heat radiation isolation area enhances the ability to isolate heat, thereby reducing the heat loss at the bottom of the thermal field, reducing the energy consumption of the single crystal furnace, and reducing the production cost. In addition, for the diversion channel 4 with such a diameter, the air flow speed and flow rate can be controlled, ensuring a uniform distribution of the thermal field temperature, and improving the single crystal quality and the finished product rate.
[0075] Embodiment Two
[0076] This application also provides a single crystal furnace, including a furnace body, a heat insulation seat 15, a guard plate pressing piece 16, and the above-mentioned diversion device 20.
[0077] Specifically, the heat preservation seat 15 is arranged on the inner bottom wall of the furnace body;
[0078] Specifically, the guard plate pressing piece 16 covers the side of the heat preservation seat 15 facing the inside of the furnace body; mounting holes 18 are formed at corresponding positions on the guard plate pressing piece 16 and the heat preservation seat 15, and the diversion device 20 is arranged in the mounting holes 18.
[0079] Further, in combination with Figure 9 as shown, two mounting holes 18 are formed on the heat preservation seat 15, and two diversion devices 20 can be installed. The two diversion devices 20 are symmetrically arranged about the central axis.
[0080] In this embodiment, further, in combination with Figure 6 and Figure 8 as shown, the shielding edge 12 extends in a direction away from the first cylinder 1 and forms a lapping edge 19; the lapping edge 19 can lap on the guard plate pressing piece 16, so that the diversion device 20 is hung on the heat preservation seat 15.
[0081] Further, the shielding edge 12 and the lapping edge 19 are integrally formed.
[0082] In this embodiment, further, the guard plate pressing piece 16 is made of isostatic graphite material or carbon-carbon composite material. Using such materials can enhance the structural stability, resist external force interference, conduct heat evenly, and control heat loss: effectively reduce the heat loss at the bottom of the thermal field, and improve the efficiency of the thermal field. By blocking the abnormal loss of heat, more heat is concentrated in the single crystal growth area, reducing energy consumption, while improving the quality and speed of single crystal growth. Protect the single crystal growth environment, prevent impurity intrusion, and maintain stable atmosphere.
[0083] In summary, the thermal field stability of the single crystal furnace is improved, the uneven heat dissipation is reduced, the risk of thermal field fluctuation is reduced, providing ideal conditions for single crystal growth; in addition, the power consumption is reduced, the heat preservation effect is enhanced, the power consumption of the single crystal furnace is reduced, the service life of the equipment is prolonged, and the maintenance and replacement frequency are reduced.
[0084] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A diversion device is disposed on the inner bottom wall of a single crystal furnace; characterized in that, The flow guide device includes a first cylinder, a second cylinder and a thermal insulation felt layer; The first cylinder is formed with a flow guide channel along its axial direction; The second cylinder is sleeved on the first cylinder, and a mounting cavity is formed between the second cylinder and the first cylinder; The thermal insulation felt layer is arranged in the installation cavity to improve the thermal insulation performance of the guide device.
2. The diversion device according to claim 1, characterized in that, The inner side wall of the second cylinder is sequentially formed with a first section, a second section and a third section along the axial direction of the second cylinder; The first section and the second section are cylindrical, and the diameter of the first section is larger than the diameter of the second section, so that the first section and the second section form a stepped structure, and a step surface is formed between the first section and the second section; The third section has a gradually expanding structure along the direction from the first section to the second section, so that the third section has an airflow outlet with a gradually expanding structure along the direction from the first section to the second section.
3. The diversion device according to claim 2, wherein, The first end of the second cylinder is in contact with the step surface, and the installation cavity is formed between the second cylinder and the first section.
4. The diversion device according to claim 3, characterized in that, A shielding edge is provided between a second end of the second cylinder facing away from the air flow outlet and an end of the first cylinder facing away from the air flow outlet; The shielding edge can seal the thermal insulation felt layer in the installation cavity.
5. The diversion device according to claim 2, characterized in that, The inner diameter of the second cylinder is the same as the diameter of the second section; An air flow inlet communicating with the flow guide channel is formed at one end of the second cylinder away from the air flow outlet.
6. The diversion device according to claim 1, wherein The thermal insulation felt layer is provided with layers, and the multiple layers of thermal insulation felt layers are arranged in sequence along the radial direction of the first cylinder.
7. The diversion device according to claim 1, characterized in that, The diameter of the diversion channel is set between 80-100 mm.
8. A single crystal furnace, characterized in that, It comprises a furnace body, a heat preservation seat, a plate protection pressing sheet, and the guide device as claimed in claim 4; The heat preservation seat is arranged on the bottom inner wall of the furnace body; The disc protection pressing piece covers the side of the heat preservation seat facing the inside of the furnace body; mounting holes are opened at corresponding positions on the disc protection pressing piece and the heat preservation seat, and the flow guide device is arranged in the mounting holes.
9. The single crystal furnace according to claim 8, characterized in that, The shielding edge extends in a direction away from the first cylinder and is formed with an overlapping edge; The overlapping edge can overlap the disc protection pressing piece.
10. The single crystal furnace according to claim 8, characterized in that, The disc guard sheet is made of isostatically pressed graphite material or carbon-carbon composite material.