Single wafer contact type heating equipment

Abstract

The utility model discloses a monolithic wafer contact type heating device, which comprises a rack, an upper cavity cover assembly, a lower cavity assembly, a lifting assembly, a gas circuit assembly and a control cabinet, the lower cavity assembly is arranged on the rack, the upper cavity cover assembly is arranged on the lower cavity assembly, the lifting assembly is arranged on the lower cavity assembly, and the gas circuit assembly is arranged on the lower cavity assembly. The air channel assembly is installed below the lower cavity assembly, the output end of the air channel assembly is connected with the upper cavity cover assembly, an air spring is arranged between the upper cavity cover assembly and the lower cavity assembly, and the problems that when a single cavity is used for conducting etching and sublimation operation, heating is slow, the procedure rhythm is slow, and particles can be generated and accumulated are solved.

Description

Technical Field

[0001] The utility model relates to the field of integrated circuit production equipment manufacturing, and particularly relates to a single-wafer contact heating device. Background Art

[0002] In the field of semiconductor production, since there is a natural oxide layer on the surface of a silicon wafer before epitaxial thin film deposition, it is necessary to pre-clean the wafer first. The function of pre-cleaning is to etch the natural oxide layer on the wafer surface. The usual technical means is to form plasma with argon gas in the reaction chamber, and then bombard the wafer surface to remove the natural oxide layer. However, with the progress of the process, while the conventional plasma pre-cleaning method removes silicon oxide, the high-energy plasma will also damage the wafer surface and affect the quality of the subsequent deposited film. For this reason, the processes of etching and sublimation have been developed. The etching reaction is to react with the silicon oxide layer to form an intermediate solid product (NH4)2SiF6, and the volatilization reaction is to heat the intermediate product to volatilize it into a gas.

[0003] The prior art is that etching and sublimation are carried out in one reactor, and in one reaction chamber, a heated spray plate is used for radiant heating. The heating efficiency is slow, the temperature is unstable, and it is easy to cause fluctuations. Since more particles are generated in the sublimation step, it will affect the quality of the wafer. For this reason, the two processes of etching and sublimation are carried out on separate machines. This can not only reduce the residence time of the wafer in a single machine, but also better carry out heating and volatilization. The heating and volatilization equipment only needs to be heated, and the cavity structure is simple, which can greatly reduce the accumulation of particles. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a single-wafer contact heating device, which solves the problems of slow heating, slow process cycle time, particle generation and accumulation in the existing single-chamber etching and sublimation operations mentioned in the above background art.

[0005] The above technical purpose of the utility model is achieved through the following technical solutions:

[0006] A single-wafer contact heating device includes a frame, an upper cavity cover assembly, a lower cavity assembly, a lifting assembly, a gas path assembly and a control cabinet. The lower cavity assembly is installed on the frame, the upper cavity cover assembly is installed on the lower cavity assembly, the lifting assembly is arranged on the lower cavity assembly, the gas path assembly is installed below the lower cavity assembly, the output end of the gas path assembly is connected to the upper cavity cover assembly, a gas spring is arranged between the upper cavity cover assembly and the lower cavity assembly, and the control cabinet is installed on the top of the frame;

[0007] The upper cavity cover assembly includes a flip cover, a top cover, an intake pipe, a protective cover, an upper rotating shaft, a fixing pin, a lower rotating shaft, a movable pin and a limiting block. The upper rotating shaft is fixed on the flip cover, the lower rotating shaft is installed on the lower cavity assembly. The upper rotating shaft is provided with a first round hole and a second round hole, the lower rotating shaft is provided with a third round hole and a fourth round hole, the fixing pin is arranged in the first round hole and the third round hole, and the limiting block is installed on the lower rotating shaft.

[0008] Preferably, the lower cavity assembly includes a lower cavity, a heater, an exhaust pipe, a butterfly valve, a gate valve, a first vacuum gauge, a negative pressure gauge and a second vacuum gauge. A rod-shaped heating rod is arranged in the lower cavity. The heater is of a disc structure. A sunken platform for placing a wafer is provided on the upper end face of the heater. Three uniformly distributed through holes are formed in the heater. The exhaust pipe is connected to the bottom of the lower cavity. The butterfly valve and the gate valve are both installed on the exhaust pipe. The exhaust pipe is also provided with a first vacuum gauge and a second vacuum gauge.

[0009] Preferably, a diaphragm valve is further arranged on the exhaust pipe. The diaphragm valve is used to connect the upper and lower sections of the pipeline of the gate valve. A diaphragm valve is also arranged on the connecting pipeline of the first vacuum gauge and the negative pressure gauge. The diaphragm valve can isolate the tail gas in the exhaust pipe.

[0010] Preferably, the lifting assembly includes side plates, a mounting seat, a lifting cylinder, a bellows, a lifting shaft, a tray and a thimble. The side plates are installed at the bottom end of the lower cavity. Slide rails are arranged on the side plates. The lifting shaft is arranged on the slide rails. The bottom of the lifting shaft is connected to the lifting cylinder. The lifting cylinder is fixed on the mounting seat. The mounting seat is arranged on the lower cavity. The upper end of the bellows is connected to the lower cavity. The lower end of the bellows is hermetically connected to the lifting shaft. The tray is installed at the upper end of the lifting shaft. The thimble is installed on the tray. The thimble is located in the through hole on the heater.

[0011] Preferably, an arc portion is further arranged on the upper rotating shaft.

[0012] Beneficial effects: This application designs a device specifically for heating and sublimation. The internal structure of the cavity is simple, avoiding the accumulation of dead corner particles, reducing particles, and improving the quality of wafers. A contact-type heating plate is used to heat the wafer, with direct contact, fast heating efficiency, more accurate temperature control. The heating source is located below the wafer, and a spraying device can be arranged above the wafer to blow air evenly on the wafer, which can purge during the sublimation of the natural oxide layer, effectively reducing the generation and accumulation of particles and improving the quality of wafers. Before opening the cavity, hardware restrictions are used to remind the operator. After opening the cavity, a safety bolt is used to lock it, facilitating the maintenance of the cavity. The opening amplitude is limited by hardware to prevent accidents. Description of the Drawings

[0013] Figure 1 Front cross-section of the overall structure diagram of the embodiment;

[0014] Figure 2 Structure diagram of the upper cavity cover assembly for the embodiment;

[0015] Figure 3 Exploded structure diagram of the connection part between the upper cavity cover assembly and the lower cavity assembly for the embodiment;

[0016] Figure 4 Schematic diagram of different working conditions of the upper cavity cover assembly for the embodiment;

[0017] Figure 5 Structure diagram of the lower cavity assembly for the embodiment;

[0018] Figure 6 Schematic diagram of the component structure on the exhaust pipe for the embodiment;

[0019] Figure 7 Structure diagram of the lifting assembly for the embodiment.

[0020] Reference numerals: 1, frame; 2, upper cavity cover assembly; 21, flip cover; 22, top cover; 23, intake pipe; 24, protective cover; 25, upper rotating shaft; 251, first round hole; 252, second round hole; 253, arc part; 26, fixing pin; 27, lower rotating shaft; 271, third round hole; 272, fourth round hole; 28, movable pin; 29, limit block; 210, gas spring; 3, lower cavity assembly; 31, lower cavity; 32, heater; 33, exhaust pipe; 34, butterfly valve; 35, gate valve; 36, first vacuum gauge; 37, negative pressure gauge; 38, second vacuum gauge; 39, diaphragm valve; 4, lifting assembly; 41, side plate; 42, mounting seat; 43, lifting cylinder; 44, bellows; 45, lifting shaft; 46, tray; 47, ejector pin; 5, gas path assembly; 6, control cabinet. Detailed implementation manners

[0021] As Figure 1 shown, a single-wafer contact heating device includes a frame 1, an upper cavity cover assembly 2, a lower cavity assembly 3, a lifting assembly 4, a gas path assembly 5 and a control cabinet 6; the lower cavity assembly 3 is installed on the frame 1, the upper cavity cover assembly 2 is installed on the lower cavity assembly 3, the lifting assembly 4 is arranged on the lower cavity assembly 3, the gas path assembly 5 is installed below the lower cavity assembly 3, the output end of the gas path assembly 5 is connected to the upper cavity cover assembly 2, and the control cabinet 6 is installed on the top of the frame 1..

[0022] As Figure 2 and Figure 3As shown, the upper cavity cover assembly 2 includes a flip cover 21, a top cover 22, an intake pipe 23, a protective cover 24, an upper rotating shaft 25, a fixing pin 26, a lower rotating shaft 27, a movable pin 28, and a limit block 29. The upper rotating shaft 25 is fixed to the flip cover 21, and the lower rotating shaft 27 is installed on the lower cavity assembly 3. The upper rotating shaft 25 is provided with a first round hole 251 and a second round hole 252, and the lower rotating shaft 27 is provided with a third round hole 271 and a fourth round hole 272. The fixing pin 26 is arranged in the first round hole 251 and the third round hole 271 to play a connecting role. The limit block 29 is installed on the lower rotating shaft 27.

[0023] As Figure 4 shown in Fig. a, it is the state where the upper cavity cover assembly 2 is closed. At this time, the movable pin 28 is arranged in the second round hole 252, and the outer wall of the movable pin 28 is close to the arc portion 253 on the upper rotating shaft 25. When the upper cavity cover assembly 2 is opened, the arc portion 253 will contact the movable pin 28 first, resulting in the inability to open, reminding the operator to take out the movable pin 28 first.

[0024] As Figure 4 shown in Fig. b, it is the state where the upper cavity cover assembly 2 is opened. The operator arranges the movable pin 28 in the second round hole 252 and the fourth round hole 272. At this time, the upper cavity cover assembly 2 is locked to prevent accidental closing.

[0025] As Figure 4 shown in Fig. c, this is the maximum opening angle of the upper cavity cover assembly 2. At this time, the upper rotating shaft 25 contacts the limit block 29 for limiting to prevent the upper cavity cover assembly 2 from tilting too far backward when opened. An air spring 210 is arranged between the upper cavity cover assembly 2 and the lower cavity assembly 3, and the fixed point of one end of the air spring 210 can be adjusted in position. The top cover 22 is installed on the flip cover 21, and a spray disc is also installed on the flip cover 21. The intake pipe 23 introduces process gas from the gas path assembly 5 and transports it to the gas diffusion cavity formed by the top cover 22 and the spray disc. The process gas includes one or more of nitrogen, argon, helium, etc. The process gas flows down evenly from the spray disc after being distributed.

[0026] As Figure 5 and Figure 6As shown in the figure, the lower chamber assembly 3 includes a lower chamber 31, a heater 32, an exhaust pipe 33, a butterfly valve 34, a gate valve 35, a first vacuum gauge 36, a negative pressure gauge 37 and a second vacuum gauge 38; a rod-shaped heating rod is arranged in the lower chamber 31, the heater 32 is disc-shaped, a sunk platform is opened on the upper end surface of the heater 32 for placing a wafer, three uniformly distributed through holes are opened on the heater 32, the exhaust pipe 33 is connected to the bottom of the lower chamber 31, the butterfly valve 34 and the gate valve 35 are installed on the exhaust pipe 33 for evacuating and controlling the pressure of the pipeline. The exhaust pipe 33 is also provided with a first vacuum gauge 36 and a second vacuum gauge 38 for monitoring different vacuum ranges, and a diaphragm valve 39 is also arranged on the exhaust pipe 33. The diaphragm valve 39 is connected to the upper and lower pipeline segments of the gate valve 35 for slow evacuation. A diaphragm valve 39 is also arranged on the connecting pipeline of the first vacuum gauge 36 and the negative pressure gauge 37. The diaphragm valve 39 can isolate the tail gas in the exhaust pipe 33 and effectively prevent gas from entering the first vacuum gauge 36 and damaging the vacuum gauge.

[0027] As Figure 7 shown in the figure, the lifting assembly 4 includes side plates 41, a mounting seat 42, a lifting cylinder 43, a bellows 44, a lifting shaft 45, a tray 46 and a thimble 47; the side plates 41 are installed at the bottom end of the lower chamber 31, and slide rails are arranged on the side plates 41. The lifting shaft 45 is arranged on the slide rails, the bottom of the lifting shaft 45 is connected to the lifting cylinder 43, the lifting cylinder 43 is fixed on the mounting seat 42, and the mounting seat 42 is arranged on the lower chamber 31. The upper end of the bellows 44 is connected to the lower chamber 31, and the lower end of the bellows 44 is hermetically connected to the lifting shaft 45. The tray 46 is installed at the upper end of the lifting shaft 45, the thimble 47 is installed on the tray 46, and the thimble 47 is located in the through hole on the heater 32.

Claims

1. A single-wafer contact heating device, comprising a frame (1), an upper cavity cover assembly (2), a lower cavity assembly (3), a lifting assembly (4), a gas circuit assembly (5) and a control cabinet (6), characterized in that, The lower chamber assembly (3) is installed on the frame (1), the upper chamber cover assembly (2) is installed on the lower chamber assembly (3), the lifting assembly (4) is arranged on the lower chamber assembly (3), the gas circuit assembly (5) is installed below the lower chamber assembly (3), the output end of the gas circuit assembly (5) is connected to the upper chamber cover assembly (2), a gas spring (210) is arranged between the upper chamber cover assembly (2) and the lower chamber assembly (3), and the control cabinet (6) is installed on the top of the frame (1); the upper chamber cover assembly (2) includes a flip cover (21), a top cover (22), an intake pipe (23), a protective cover (24), an upper rotating shaft (25), a fixing pin (26), a lower rotating shaft (27), a movable pin (28) and a limit block (29). The upper rotating shaft (25) is fixed on the flip cover (21), the lower rotating shaft (27) is installed on the lower chamber assembly (3), a first round hole (251) and a second round hole (252) are arranged on the upper rotating shaft (25), a third round hole (271) and a fourth round hole (272) are arranged on the lower rotating shaft (27), the fixing pin (26) is arranged in the first round hole (251) and the third round hole (271), and the limit block (29) is installed on the lower rotating shaft (27).

2. The single-wafer contact heating device according to claim 1, characterized in that, The described lower chamber assembly (3) includes a lower chamber (31), a heater (32), an exhaust pipe (33), a butterfly valve (34), a gate valve (35), a first vacuum gauge (36), a negative pressure gauge (37) and a second vacuum gauge (38). A rod-shaped heating rod is arranged in the lower chamber (31). The heater (32) is of a disc structure. A sunken platform for placing a wafer is arranged on the upper end surface of the heater (32). Three evenly distributed through holes are formed in the heater (32). The exhaust pipe (33) is connected to the bottom of the lower chamber (31). The butterfly valve (34) and the gate valve (35) are both installed on the exhaust pipe (33). A first vacuum gauge (36) and a second vacuum gauge (38) are also arranged on the exhaust pipe (33).

3. The single-wafer contact heating device according to claim 2, characterized in that, A diaphragm valve (39) is also arranged on the exhaust pipe (33). The diaphragm valve (39) is used to connect the upper and lower two sections of pipelines of the gate valve (35). A diaphragm valve (39) is also arranged on the connecting pipeline of the first vacuum gauge (36) and the negative pressure gauge (37). The diaphragm valve (39) can isolate the tail gas in the exhaust pipe (33).

4. A single-wafer contact heating device according to claim 2, characterized in that, The described lifting assembly (4) includes side plates (41), a mounting base (42), a lifting cylinder (43), a bellows (44), a lifting shaft (45), a tray (46), and a thimble (47). The side plates (41) are installed at the bottom end of the lower cavity (31). Slide rails are provided on the side plates (41). The lifting shaft (45) is arranged on the slide rails. The bottom of the lifting shaft (45) is connected to the lifting cylinder (43). The lifting cylinder (43) is fixed on the mounting base (42). The mounting base (42) is arranged on the lower cavity (31). The upper end of the bellows (44) is connected to the lower cavity (31). The lower end of the bellows (44) is sealingly connected to the lifting shaft (45). The tray (46) is installed at the upper end of the lifting shaft (45). The thimble (47) is installed on the tray (46). The thimble (47) is located in the through hole on the heater (32).

5. A single-wafer contact heating device according to claim 1, characterized in that, An arc portion (253) is further provided on the upper rotating shaft (25).

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