High-speed CIS probe card

By optimizing the structure and materials of high-speed probe cards, the problem of low test rate of existing CIS probe cards is solved, high-speed and high-precision wafer testing is achieved, and testing efficiency and signal transmission quality are improved.

CN223192999UActive Publication Date: 2025-08-05SHENGHUA MICRO NANO TECH (SUZHOU) CO LTD
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Patent Information

Application Number
CN202422108505.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-29
Publication Date
2025-08-05
Estimated Expiration
2034-08-29

AI Technical Summary

Technical Problem

Existing CIS probe cards can only reach a data transmission rate of 1Gbps during high-speed testing, resulting in low wafer testing efficiency.

Method used

A high-speed CIS probe card is designed to reduce the impedance between the high-speed probe and the high-speed circuit board, and connect the high-speed probe and the installation position on the high-speed substrate by welding. Low-loss materials and high-dielectric constant materials are used to optimize the signal transmission path and reduce signal attenuation.

Benefits of technology

It realizes a data transmission rate of 3.5Gbps, improves the test efficiency and accuracy of wafers, and ensures high efficiency and high quality of signal transmission.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a high-speed CIS probe card, which belongs to the technical field of probe cards and comprises a base. The high-speed circuit board is arranged on the base; the high-speed substrate is connected with the high-speed circuit board and / or the base; the observation device is electrically connected with the high-speed circuit board; the plurality of high-speed probes are arranged around at least part of the periphery of the observation device; the high-speed substrate is provided with a plurality of mounting positions in one-to-one correspondence with the high-speed probes, the high-speed probes are welded to the corresponding mounting positions respectively, and the mounting positions are electrically connected with the high-speed circuit board. According to the probe card designed by the utility model, the impedance between the high-speed probe and the high-speed circuit board is reduced, so that the signal attenuation between the high-speed circuit board and the high-speed probe is reduced, and the signal transmission efficiency and quality between the high-speed probe and the high-speed circuit board are improved; therefore, the probe card can realize high-speed and high-precision testing, and the testing efficiency of the wafer is improved.
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Description

Technical Field

[0001] The utility model belongs to the technical field of probe cards, and in particular relates to a high-speed CIS probe card. Background Art

[0002] In related technologies, the CIS probe card (Contact Imaging System probe card) is an important tool specifically used for semiconductor testing, mainly used to perform electrical testing on chips at the wafer level. In existing technologies, the CIS probe card can only achieve a data transmission rate of 1Gbps during high-speed testing, resulting in low wafer testing efficiency. Utility Model Content

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present invention is to provide a high-speed CIS probe card. The high-speed CIS probe card designed according to the present invention reduces the impedance between the high-speed probe and the high-speed circuit board, thereby reducing the signal attenuation between the high-speed circuit board and the high-speed probe, and improving the signal transmission efficiency and quality between the high-speed probe and the high-speed circuit board. This enables the probe card of the present application to achieve high-speed and high-precision testing, thereby improving the testing efficiency of wafers.

[0004] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions:

[0005] The present invention provides a high-speed CIS probe card, comprising: a base; a high-speed circuit board, the high-speed circuit board being arranged on one side of the base in the thickness direction; a high-speed substrate, the high-speed substrate being connected to the high-speed circuit board and / or the base; an observation device, the observation device being electrically connected to the high-speed circuit board; a plurality of high-speed probes, the plurality of high-speed probes being arranged around at least part of the periphery of the observation device; wherein a plurality of mounting positions corresponding to the high-speed probes are provided on the high-speed substrate, the plurality of high-speed probes are respectively welded to the corresponding mounting positions, and the plurality of mounting positions are all electrically connected to the high-speed circuit board, and the observation device is suitable for receiving images of the free ends of the plurality of high-speed probes.

[0006] According to the high-speed CIS probe card of the present invention, its high-speed probes are set at the installation positions on the high-speed substrate by welding, and each installation position is electrically connected to the high-speed circuit board, thereby reducing the impedance between the high-speed probes and the high-speed circuit board, thereby reducing the signal attenuation between the high-speed circuit board and the high-speed probes, and improving the signal transmission efficiency and quality between the high-speed probes and the high-speed circuit board, so that the probe card of the present application can achieve high-speed and high-precision testing, and improve the testing efficiency of the wafer.

[0007] Furthermore, the dielectric constant of the high-speed substrate is Dk, which satisfies: Dk≥2, and the dielectric loss factor of the high-speed substrate is Df, which satisfies: Df≤10 -4 .

[0008] Furthermore, the high-speed probe includes: a connecting part, one end of which is arranged at the installation position, and the other end of the connecting part extends obliquely toward the observation device; a detection part, which is arranged at the other end of the connecting part, and the extension direction of the detection part is parallel to the height direction.

[0009] Furthermore, the connecting portion is provided with a plurality of grooves, the plurality of grooves are arranged at intervals along the circumference of the connecting portion, and the extension directions of the plurality of grooves are parallel to the extension direction of the connecting portion.

[0010] Furthermore, the observation device includes: a color adjustment module, which is electrically connected to the high-speed circuit board; an infrared light filtering module, which is electrically connected to the high-speed circuit board; an optical path adjustment module, which is electrically connected to the high-speed circuit board; and a lens, which is electrically connected to the high-speed circuit board; wherein the color adjustment module, the infrared light filtering module, the optical path adjustment module and the lens are stacked in sequence in the height direction.

[0011] Furthermore, the observation device further includes: a light and temperature adjustment module, the light and temperature adjustment module is electrically connected to the high-speed circuit board, and the light and temperature adjustment module is arranged between the lens and the light path adjustment module.

[0012] Furthermore, the base is provided with a receiving groove, and the receiving groove is suitable for receiving the high-speed circuit board and the high-speed substrate.

[0013] Furthermore, it also includes: a ceramic connecting plate, which is arranged between the high-speed circuit board and the bottom of the accommodating groove, and the ceramic connecting plate is suitable for connecting the high-speed circuit board and the base.

[0014] Other advantages, objectives, and features of the present invention will be described in the following description and will be apparent to those skilled in the art to some extent, or they may be taught by those skilled in the art from the practice of the present invention. The objectives and other advantages of the present invention may be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to make the purpose, technical solution and beneficial effects of the present invention clearer, the present invention is described with the following drawings:

[0016] Figure 1 This is a schematic structural diagram of the probe card of the present utility model;

[0017] Figure 2 This is a partial structural diagram of the probe card of the present invention.

[0018] The following are marked in the accompanying drawings:

[0019] 1. Probe card; 2. Wafer;

[0020] 10. Base; 20. High-speed circuit board; 30. High-speed substrate;

[0021] 40. Observation device; 41. Color adjustment module; 42. Infrared light filtering module; 43. Light path adjustment module; 44. Lens; 45. Light temperature adjustment module;

[0022] 50. High-speed probe; 51. Connecting part; 52. Detection part;

[0023] 60. Ceramic connecting plate; 70. Fixed column; 80. High-speed connector. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The schematic implementation methods of the present invention and their descriptions are only used to explain the present invention and are not intended to limit the present invention.

[0025] In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that these specific details are not necessarily required to practice the present invention. In other instances, well-known structures, circuits, materials, or methods are not described in detail to avoid obscuring the present invention.

[0026] Throughout this specification, references to "one embodiment," "an embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment of the present invention. Therefore, the phrases "one embodiment," "an embodiment," "an example," or "an example" appearing in various places throughout this specification do not necessarily refer to the same embodiment or example. In addition, the particular features, structures, or characteristics may be combined in one or more embodiments or examples in any suitable combination and / or subcombination. Furthermore, it will be understood by those of ordinary skill in the art that the figures provided herein are for illustrative purposes only and are not necessarily drawn to scale. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0027] In the description of the present invention, it should be understood that the terms "front", "rear", "left", "right", "up", "down", "vertical", "horizontal", "high", "low", "inside", "outside", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention.

[0028] Example 1: Figure 1-Figure 2 As shown, the present invention provides a high-speed CIS probe card 1, comprising: a base 10, a high-speed circuit board 20, a high-speed substrate 30, an observation device 40, and high-speed probes 50. The high-speed circuit board 20 is disposed on one side of the base 10 in the thickness direction. The high-speed substrate 30 is connected to the high-speed circuit board 20 and / or the base 10. The observation device 40 is electrically connected to the high-speed circuit board 20. There are multiple high-speed probes 50, and the multiple high-speed probes 50 are arranged around at least a portion of the periphery of the observation device 40. The high-speed substrate 30 is provided with multiple mounting positions corresponding to the high-speed probes 50. The multiple high-speed probes 50 are respectively soldered to the corresponding mounting positions, and the multiple mounting positions are electrically connected to the high-speed circuit board 20. The observation device 40 is adapted to receive images from the free ends of the multiple high-speed probes 50. It should be noted that a fixing post 70 is provided on the other side of the base 10 in the thickness direction. The base 10 is connected to the test equipment via the fixing post 70. The probe card 1 also includes a high-speed connector 80, which is adapted to electrically connect the high-speed circuit board 20 to the terminal equipment.

[0029] In some embodiments, the base 10 serves as the basic structure, and the base 10 provides support for other components. The high-speed circuit board 20 is arranged on one side of the base 10 in the thickness direction. The high-speed circuit board 20 is responsible for the transmission of high-speed signals. The high-speed substrate 30 is connected to the high-speed circuit board 20 and / or the base 10 to ensure the stability of the electrical connection and the integrity of the signal transmission. The observation device 40 is electrically connected to the high-speed circuit board 20. The observation device 40 is used to receive and record the image of the free end of the high-speed probe 50. Multiple high-speed probes 50 are arranged around at least part of the periphery of the observation device 40. Each high-speed probe 50 is welded to the corresponding mounting position on the high-speed substrate 30, and these mounting positions are electrically connected to the high-speed circuit board 20.

[0030] In some embodiments, the high-speed substrate 30 is provided with multiple mounting openings extending through the height direction. Each mounting opening houses an observation device 40, which is electrically connected to the high-speed circuit board 20. It is worth noting that each mounting opening corresponds to one observation device 40, and each observation device 40 corresponds to multiple high-speed probes 50. The multiple high-speed probes 50 are arranged around at least a portion of the periphery of the observation device 40, that is, the multiple high-speed probes 50 are arranged around at least a portion of the periphery of the mounting opening.

[0031] It is worth noting that the high-speed substrate 30 is connected to the high-speed circuit board 20 and / or the base 10. Here, the high-speed substrate 30 can be connected to the high-speed circuit board 20; it can also be connected to the base 10; it can also be connected to the high-speed circuit board 20 and the high-speed substrate 30 is connected to the base 10. There is no limitation here.

[0032] Of course, the high-speed probe 50 is connected to the mounting position by welding, which reduces the resistance between the high-speed probe 50 and the mounting position, thereby reducing the impedance between the high-speed probe 50 and the high-speed circuit board 20, and improving the signal transmission efficiency and quality between the high-speed probe 50 and the high-speed circuit board 20.

[0033] Preferably, the high-speed circuit board 20 is made of low-loss materials to reduce energy loss during signal transmission; the high-speed substrate 30 is made of materials with high dielectric constant and low dielectric loss to reduce signal delay and improve data transmission rate; the high-speed probe 50 has the characteristics of low inductance and low capacitance to improve signal transmission quality and test accuracy.

[0034] It can be understood that through the design of the high-speed circuit board 20 and the high-speed substrate 30, high-speed and stable signal transmission is achieved. At the same time, the combination of the observation device 40 and the high-speed probe 50 enables the user to observe the working status of the probe in real time and accurately, thereby improving the accuracy and efficiency of detection.

[0035] It should be noted that the present application achieves a data transmission rate of 3.5 Gbps through the above-mentioned settings, which significantly improves the test speed of wafer 2.

[0036] According to the high-speed CIS probe card 1 of the present invention, its high-speed probe 50 is set at the installation position on the high-speed substrate 30 by welding, and each installation position is electrically connected to the high-speed circuit board 20, thereby reducing the impedance between the high-speed probe 50 and the high-speed circuit board 20, thereby reducing the signal attenuation between the high-speed circuit board 20 and the high-speed probe 50, and improving the signal transmission efficiency and quality between the high-speed probe 50 and the high-speed circuit board 20, so that the probe card 1 of the present application can achieve high-speed and high-precision testing, and improve the testing efficiency of the wafer 2.

[0037] Example 2: Based on Example 1, the dielectric constant of the high-speed substrate 30 is Dk, which satisfies: Dk≥2, and the dielectric loss factor of the high-speed substrate 30 is Df, which satisfies: Df≤10 -4 .

[0038] In some embodiments, the dielectric constant Dk refers to the ability of a material to store electric field energy. Materials with higher dielectric constants can provide better signal isolation and help reduce interference between signals. Therefore, the present application sets the dielectric constant Dk ≥ 2, so that the high-speed substrate 30 has a sufficient dielectric constant to support high-speed signal transmission between the high-speed probe 50, the high-speed substrate 30, and the high-speed circuit board 20; the dielectric loss factor Df measures the ratio of the energy of the material converted into heat under the action of the electric field, Df ≤ 10 -4 This indicates that the high-speed substrate 30 of the present application has very low dielectric loss, thereby reducing energy loss of signals during transmission.

[0039] It can be understood that the above-mentioned setting can further reduce signal attenuation, help maintain signal integrity, and reduce signal distortion during high-speed transmission. At the same time, the lower dielectric loss factor and higher dielectric constant work together to improve the quality of signal transmission between the high-speed probe 50, the high-speed substrate 30 and the high-speed circuit board 20, thereby improving the test accuracy of the probe card 1 on the wafer 2.

[0040] Preferably, the high-speed substrate 30 is made of PTFE (polytetrafluoroethylene), which is an excellent high-frequency material. The dielectric constant of PTFE is approximately between 2.1 and 2.3, which is conducive to the propagation of high-frequency signals; the dielectric loss factor of PTFE is very low, usually around 10 -4 to 10 -5 The energy loss caused by the high-speed substrate 30 made of PTFE material during signal transmission is very small. Further, the high-speed circuit board 20 can also be made of PTFE. Of course, the high-speed circuit board 20 can also be made of ROGERS material, which is not limited here.

[0041] Example 3: Based on Example 2, this example, the high-speed probe 50 includes: a connecting part 51 and a detection part 52, one end of the connecting part 51 is set at the installation position, and the other end of the connecting part 51 extends obliquely toward the observation device 40, and the detection part 52 is set at the other end of the connecting part 51, and the extension direction of the detection part 52 is parallel to the height direction.

[0042] It is understood that one end of the connecting portion 51 is fixed to the mounting position on the high-speed substrate 30 to ensure stable connection of the probe, while the other end of the connecting portion 51 extends obliquely toward the observation device 40. This oblique design helps to reduce the effective length of the connecting portion 51 and the physical interference between the probe and the observation device 40, thereby reducing inductance and optimizing the signal transmission path between the signal wafer 2, the high-speed probe 50, the high-speed substrate 30, and the high-speed circuit board 20. The detection portion 52 is provided at the other end of the connecting portion 51, and the extension direction of the probe card 1 is parallel to the height direction, which helps to reduce the contact area with the chip under test, thereby reducing capacitance. At the same time, it enables the detection portion 52 to more directly contact the object or area to be tested, improving the accuracy and sensitivity of detection. At the same time, the detection portion 52 can reduce the detection error caused by the tilt or offset of the high-speed probe 50, thereby improving the test accuracy of the wafer 2.

[0043] According to some embodiments of the present invention, the connecting portion 51 is provided with a plurality of grooves, which are arranged at intervals along the circumference of the connecting portion 51 , and the extension directions of the plurality of grooves are all parallel to the extension direction of the connecting portion 51 .

[0044] It can be understood that the groove design can increase the flexibility of the connecting part 51, so that the high-speed probe 50 can better adapt to and disperse stress when subjected to external force, thereby improving the mechanical strength and durability of the high-speed probe 50, and making the high-speed probe 50 more durable during long-term use.

[0045] At the same time, the presence of the grooves changes the electric field distribution of the connecting portion 51. However, since the multiple grooves are arranged uniformly and parallel along the connecting portion 51, this effect is controlled within a certain range and does not significantly affect the signal transmission quality. It is worth mentioning that the design of the grooves can reduce the cross-sectional area of the connecting portion 51, thereby reducing the inductance of the connecting portion 51, and further reducing the reflection and distortion of the signal during the transmission process, thereby improving the quality of signal transmission and thus improving the testing accuracy of the wafer 2.

[0046] Of course, the groove design also helps to reduce the weight and volume of the connecting part 51, further improving the response speed and flexibility of the high-speed probe 50. At the same time, the groove can also serve as a heat dissipation channel to help the connecting part 51 quickly dissipate the heat generated during high-speed signal transmission, thereby maintaining the stability and reliability of the probe.

[0047] Embodiment 4: Based on Embodiment 1, this embodiment comprises an observation device 40 including a color adjustment module 41, an infrared light filtering module 42, an optical path adjustment module 43, and a lens 44. The color adjustment module 41 is electrically connected to the high-speed circuit board 20, the infrared light filtering module 42 is electrically connected to the high-speed circuit board 20, the optical path adjustment module 43 is electrically connected to the high-speed circuit board 20, and the lens 44 is electrically connected to the high-speed circuit board 20. The color adjustment module 41, the infrared light filtering module 42, the optical path adjustment module 43, and the lens 44 are stacked in sequence in the height direction.

[0048] In some embodiments, the color adjustment module 41 is used to adjust the color of the captured image to improve the contrast and clarity of the image; the infrared light filtering module 42 is used to filter out infrared light to prevent it from interfering with the test results; the optical path adjustment module 43 is used to adjust the light path to ensure that the light can be properly focused on the free end of the high-speed probe 50; and the lens 44 is used to capture the image of the high-speed probe 50 when it contacts the chip under test. It is worth noting that the color adjustment module 41, infrared light filtering module 42, optical path adjustment module 43, and lens 44 are stacked in sequence in the height direction. This arrangement helps to simplify the device structure, making the structure of the observation device 40 more compact, reducing the space occupied by the observation device 40, and facilitating maintenance and adjustment of the observation device 40.

[0049] It can be understood that by adjusting the color through the color adjustment module 41, filtering out infrared light through the infrared light filter module 42, and optimizing the light path through the optical path adjustment module 43, the quality of the captured image can be significantly improved; the infrared light filter module 42 helps to reduce the impact of infrared light on the test results and ensure the accuracy of the test results; the optical path adjustment module 43 can ensure that the light is correctly focused on the free end of the high-speed probe 50, thereby obtaining a clearer image.

[0050] According to some embodiments of the present invention, the observation device 40 further includes a light and temperature adjustment module 45 , which is electrically connected to the high-speed circuit board 20 and is disposed between the lens 44 and the light path adjustment module 43 .

[0051] It is understandable that the light temperature adjustment module 45 is used to adjust the temperature of the light to prevent excessively high temperature from adversely affecting the test results.

[0052] During high-speed testing, light may generate a certain amount of heat, which may cause image quality to degrade or affect the normal operation of the chip under test. Therefore, the present application adjusts the light temperature through the light temperature adjustment module 45 to ensure that the light does not have a negative impact on the test environment.

[0053] At the same time, the light temperature adjustment module 45 is arranged between the lens 44 and the light path adjustment module 43, so as to ensure that the light reaches the lens 44 after being properly temperature-adjusted, thereby achieving high-quality images.

[0054] Embodiment 5: Based on the embodiment 1, the base 10 is provided with a receiving groove suitable for receiving the high-speed circuit board 20 and the high-speed substrate 30.

[0055] It will be appreciated that the receiving slots on the base 10 are suitable for accommodating the high-speed circuit board 20 and the high-speed substrate 30. These slots ensure that the high-speed circuit board 20 and the high-speed substrate 30 are securely mounted on the base 10 and maintain good electrical connection. Furthermore, by providing the receiving slots on the base 10, the correct mounting positions of the high-speed circuit board 20 and the high-speed substrate 30 are ensured, preventing the high-speed substrate 30 and the high-speed circuit board 20 from moving or becoming loose during testing, thereby ensuring the stability and reliability of the test.

[0056] According to some embodiments of the present invention, the probe card 1 further includes a ceramic connecting plate 60 , which is disposed between the high-speed circuit board 20 and the bottom of the receiving groove. The ceramic connecting plate 60 is suitable for connecting the high-speed circuit board 20 to the base 10 .

[0057] It can be understood that the ceramic connecting plate 60 is a material with excellent electrical insulation properties and good thermal stability. The ceramic connecting plate 60 is placed between the high-speed circuit board 20 and the bottom of the accommodating groove. The ceramic connecting plate 60 is used to fix the high-speed circuit board 20 on the base 10. At the same time, the ceramic connecting plate 60 can provide good electrical isolation to avoid short circuits or electrical interference between the high-speed circuit board 20 and the base 10. Of course, the ceramic material has good thermal stability. The ceramic connecting plate 60 can withstand the heat generated during high-speed testing, which helps to maintain the stability and reliability of the high-speed circuit board 20.

[0058] Therefore, the use of the ceramic connecting plate 60 can enhance the electrical isolation between the high-speed circuit board 20 and the base 10, reduce the electrical interference between the high-speed circuit board 20 and the base 10, and improve the accuracy of the test. At the same time, the ceramic connecting plate 60 helps to enhance the fixation of the high-speed circuit board 20, ensuring the stability and reliability of the high-speed circuit board 20 during high-speed testing. At the same time, the thermal stability of the ceramic material helps to maintain the operating temperature of the high-speed circuit board 20, reducing the test errors caused by temperature changes.

[0059] Finally, it should be noted that the above preferred embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail through the above preferred embodiments, those skilled in the art should understand that various changes can be made in form and details without departing from the scope defined by the claims of the present invention.

Claims

1. A high-speed CIS probe card, characterized in that: include: Base (10); A high-speed circuit board (20), the high-speed circuit board (20) being arranged on one side of the base (10) in the thickness direction; A high-speed substrate (30), the high-speed substrate (30) being connected to the high-speed circuit board (20) and / or the base (10); An observation device (40), the observation device (40) being electrically connected to the high-speed circuit board (20); A high-speed probe (50), wherein the high-speed probe (50) is multiple, and the multiple high-speed probes (50) are arranged around at least a portion of the periphery of the observation device (40); wherein The high-speed substrate (30) is provided with a plurality of mounting positions corresponding to the high-speed probes (50), and the plurality of high-speed probes (50) are respectively welded to the corresponding mounting positions, and the plurality of mounting positions are electrically connected to the high-speed circuit board (20). The observation device (40) is suitable for receiving images of the free ends of the plurality of high-speed probes (50).

2. The high-speed CIS probe card according to claim 1, wherein: The dielectric constant of the high-speed substrate (30) is Dk, which satisfies: Dk≥2; the dielectric loss factor of the high-speed substrate (30) is Df, which satisfies: Df≤10 -4 .

3. The high-speed CIS probe card according to claim 2, wherein: The high-speed probe (50) comprises: a connecting portion (51), one end of the connecting portion (51) being disposed at the mounting position, and the other end of the connecting portion (51) being inclined and extending toward the observation device (40); A detection portion (52), the detection portion (52) is arranged at the other end of the connecting portion (51), and the extension direction of the detection portion (52) is parallel to the height direction.

4. The high-speed CIS probe card according to claim 3, wherein: The connecting portion (51) is provided with a plurality of grooves, the plurality of grooves are arranged at intervals along the circumference of the connecting portion (51), and the extension directions of the plurality of grooves are all parallel to the extension direction of the connecting portion (51).

5. The high-speed CIS probe card according to claim 1, wherein: The observation device (40) comprises: A color adjustment module (41), the color adjustment module (41) being electrically connected to the high-speed circuit board (20); an infrared light filtering module (42), the infrared light filtering module (42) being electrically connected to the high-speed circuit board (20); an optical path adjustment module (43), the optical path adjustment module (43) being electrically connected to the high-speed circuit board (20); A lens (44), the lens (44) being electrically connected to the high-speed circuit board (20); wherein The color adjustment module (41), the infrared light filtering module (42), the light path adjustment module (43), and the lens (44) are stacked in sequence in the height direction.

6. The high-speed CIS probe card according to claim 5, wherein: The observation device (40) further comprises: A light and temperature adjustment module (45), the light and temperature adjustment module (45) is electrically connected to the high-speed circuit board (20), and the light and temperature adjustment module (45) is arranged between the lens (44) and the light path adjustment module (43).

7. The high-speed CIS probe card according to claim 1, wherein: The base (10) is provided with a receiving groove, and the receiving groove is suitable for receiving the high-speed circuit board (20) and the high-speed substrate (30).

8. The high-speed CIS probe card according to claim 7, wherein: Also includes: A ceramic connecting plate (60) is provided between the high-speed circuit board (20) and the bottom of the accommodating groove, and the ceramic connecting plate (60) is suitable for connecting the high-speed circuit board (20) and the base (10).