Ion implantation device and semiconductor structure

Abstract

The utility model provides an ion implantation device and a semiconductor structure. Wherein a first adjusting baffle plate and a second adjusting baffle plate are arranged in the ion implantation device, and a through hole is formed under the combination of the first adjusting baffle plate and the second adjusting baffle plate. The size of the through hole can be adjusted in the process of relative movement of the first adjusting baffle and the second adjusting baffle, so that the radial size of the ion beam passing through the through hole can be accurately controlled, a narrow scanning zone can be formed, an injection scanning area can be accurately defined, and the scanning efficiency is improved. Transition regions among different injection scanning regions are prevented from being formed, accurate injection compensation of each region is ensured, and the performance of the semiconductor structure is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an ion implantation device and a semiconductor structure. Background Art

[0002] In the process of integrated circuit manufacturing, especially in the preparation of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), due to various reasons such as film thickness difference and etching rate, the wafer surface may have the following defects: Figure 1 The concentric circular structure shown in FIG. That is, the surface of the wafer 10 is divided into multiple annular regions, and the electrical parameters of each annular region vary to a certain extent. To address this, the existing process uses ion implantation (IMP) to dope different annular regions with different ion concentrations to compensate for each region and meet the requirements of the wafer acceptance test (WAT).

[0003] However, if Figure 2 As shown, in view of the fact that the width W of the ion beam scanning zone S emitted by the existing ion implantation device is relatively large, a relatively wide ion doping transition region will be formed on the surface of the wafer 10 during the implantation scan. Figure 3 and Figure 4 As shown, after ion implantation, a first transition region D1 is formed between the fifth annular region zone5 and the fourth annular region zone4 on the surface of the wafer 10, a second transition region D2 is formed between the fourth annular region zone4 and the third annular region zone3, a third transition region D3 is formed between the third annular region zone3 and the second annular region zone2, and a fourth transition region D4 is formed between the second annular region zone2 and the first annular region zone1. And, as shown in FIG. Figure 5 As shown, since the width W of the ion beam scanning band is too large, the boundaries of each area after the ion compensation injection are blurred, and it is difficult to accurately define each scanning area. Therefore, it is impossible to achieve accurate compensation for each annular area, and the electrical parameters of each annular area after ion doping cannot achieve the expected compensation effect, which seriously affects the wafer performance.

[0004] Therefore, a new ion implantation device is urgently needed to solve the above technical problems. Utility Model Content

[0005] The purpose of the present invention is to provide an ion implantation device and a semiconductor structure to solve at least one of the problems of how to improve the boundary control accuracy of ion implantation and how to improve the ion implantation compensation effect on the wafer.

[0006] In order to solve the above technical problems, the utility model provides an ion implantation device, comprising an ion source unit, an ion beam transmission unit and an implantation chamber;

[0007] The ion source unit is used to emit an ion beam;

[0008] The ion beam transmission unit is at least used to transmit the ion beam to the implantation chamber; wherein the ion beam transmission unit includes a first adjustment baffle and a second adjustment baffle, and the first adjustment baffle and the second adjustment baffle are relatively movable to form through holes of different sizes, so that the ion beam forms a scanning zone of a preset size in the implantation chamber after being adjusted by the through holes;

[0009] The implantation chamber includes a carrier platform; the carrier platform is used to carry a wafer so that the adjusted ion beam can be scanned to the surface of the wafer.

[0010] Optionally, in the ion implantation device, the first adjustment baffle and the second adjustment baffle are arranged in parallel to each other and perpendicular to the propagation direction of the ion beam;

[0011] Wherein, along the propagation direction of the ion beam, the first adjustment baffle and the second adjustment baffle are arranged at intervals, and can move toward each other or move away from each other along their own setting directions.

[0012] Optionally, in the ion implantation device, along the setting direction of the first adjustment baffle and the second adjustment baffle, the first adjustment baffle and the second adjustment baffle both have relative inner walls and outer walls; wherein the inner wall of the first adjustment baffle and the inner wall of the second adjustment baffle are relatively set, and the inner wall of the first adjustment baffle and the inner wall of the second adjustment baffle are both curved surfaces, so as to combine to form the through hole.

[0013] Optionally, in the ion implantation device, the inner side wall of the first adjustment baffle and the inner side wall of the second adjustment baffle are both arc-shaped surfaces, and along the setting direction of the first adjustment baffle and the second adjustment baffle, the protruding directions of the two inner side walls are opposite.

[0014] Optionally, in the ion implantation device, the outer side wall of the first adjustment baffle and the outer side wall of the second adjustment baffle are both arc-shaped, and along the setting direction of the first adjustment baffle and the second adjustment baffle, the protruding directions of the two outer side walls are opposite, so that the first adjustment baffle and the second adjustment baffle are both fin-shaped.

[0015] Optionally, in the ion implantation device, the thickness range of the first adjustment baffle and the second adjustment baffle is: 1cm~5cm; and along the setting direction of the first adjustment baffle and the second adjustment baffle, the length range of the outer wall of the first adjustment baffle and the outer wall of the second adjustment baffle is: 45cm~50cm; the length range of the inner wall of the first adjustment baffle and the inner wall of the second adjustment baffle is: 30cm~40cm.

[0016] Optionally, in the ion implantation device, when the first adjustment baffle and the second adjustment baffle move toward each other, the size of the through hole decreases; when the first adjustment baffle and the second adjustment baffle move away from each other, the size of the through hole increases.

[0017] Optionally, in the ion implantation device, the maximum length range of the through hole is: 0.6 cm to 2 cm; the maximum height range of the through hole is: 0.9 cm to 3 cm;

[0018] Optionally, in the ion implantation device, the ion beam transmission unit further includes adjacently arranged scanning plates and calibration magnets; the first adjustment baffle and the second adjustment baffle are arranged on the side of the scanning plate away from the calibration magnet, so that the ion beam passes through the through hole formed by the first adjustment baffle and the second adjustment baffle, the magnetic field region formed by the scanning plate and the calibration magnet in sequence, and then is incident on the wafer surface in the implantation chamber.

[0019] Based on the same concept, the present invention also provides a semiconductor structure, which is prepared by using the ion implantation device.

[0020] In summary, the present invention provides an ion implantation device and a semiconductor structure. The ion implantation device includes a first adjustment baffle and a second adjustment baffle, which, in combination, form a through hole. During the relative movement of the first and second adjustment baffles, the size of the through hole can be adjusted, thereby precisely controlling the radial size of the ion beam passing through the through hole. This allows for the formation of a narrow scanning band, facilitating the precise definition of the implantation scan area, avoiding the formation of transition areas between different implantation scan areas, ensuring precise implantation compensation for each area, and improving the performance of the semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0022] Figure 1 It is a schematic diagram of the annular area formed on the surface of the wafer in the prior art.

[0023] Figure 2 It is a schematic diagram of a wide scanning band in the prior art.

[0024] Figure 3 It is a schematic diagram of the transition region formed after ion compensation implantation in the prior art.

[0025] Figure 4 This is a schematic diagram of the relationship between ion concentrations in the annular region and the transition region in the prior art.

[0026] Figure 5 It is a schematic diagram of the voltage performance of the wafer after ion compensation implantation in the prior art.

[0027] Figure 6 It is a structural schematic diagram of the ion implantation device in an embodiment of the present utility model.

[0028] Figure 7 It is a schematic diagram of a narrow scanning zone in an embodiment of the present utility model.

[0029] Figure 8 It is a structural schematic diagram of the first adjustment baffle and the second adjustment baffle in an embodiment of the present utility model.

[0030] Figure 9 It is a schematic diagram of the dimensions of the first adjustment baffle and the second adjustment baffle in an embodiment of the present utility model.

[0031] Figure 10 This is a schematic diagram of the process of ion beam passing through the through hole in an embodiment of the present utility model.

[0032] Figure 11 This is a schematic diagram of the relationship between ion concentrations in the narrow scanning band injection area in an embodiment of the present utility model.

[0033] Figure 12 It is a schematic diagram of the voltage performance of the wafer after the narrow scanning band implantation in the embodiment of the present invention.

[0034] And, in the accompanying drawings:

[0035] 10-wafer;

[0036] 20- ion source unit; 30- ion beam transmission unit; 301- mass selection module; 302- ion acceleration module; 303- focusing scanning module; 3031- first adjustment baffle; 3032- second adjustment baffle; 3033- calibration magnet; 3034- scanning plate; 40- injection chamber; 401- carrying platform;

[0037] zone1-first annular area; zone2-second annular area; zone3-third annular area; zone4-fourth annular area; zone5-fifth annular area; D1-first transition area; D2-second transition area; D3-third transition area; D4-fourth transition area; S-scanning belt; B-ion beam; T-through hole; N-inner wall; M-outer wall; K-setting direction of the first adjustment baffle and the second adjustment baffle; V1-first direction; V2-second direction; L1-length of the outer wall; L2-length of the inner wall; L3-maximum length of the through hole; H-maximum height of the through hole. DETAILED DESCRIPTION

[0038] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis required to be shown in each drawing is different, and sometimes different proportions are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third" and the like in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc. In addition, the X-axis direction, Y-axis direction and Z-axis direction referred to in the specification of this application are three directions perpendicular to each other in three-dimensional space.

[0039] See also Figure 6 , this embodiment provides an ion implantation device, including an ion source unit 20, an ion beam transmission unit 30 and an implantation chamber 40; the ion source unit 20 is used to emit an ion beam B; the ion beam transmission unit 30 is at least used to transmit the ion beam B to the implantation chamber 40; wherein, the ion beam transmission unit 30 includes a first adjustment baffle 3031 and a second adjustment baffle 3032, and the first adjustment baffle 3031 and the second adjustment baffle 3032 can move relative to each other to form through holes T of different sizes, so that after the ion beam B is adjusted by the through hole T, a scanning belt S of a preset size is formed in the implantation chamber 40; the implantation chamber 40 includes a carrier 401; the carrier 401 is used to carry a wafer 10, so that the adjusted ion beam B can be scanned to the surface of the wafer 10.

[0040] As can be seen, the ion implantation apparatus provided in this embodiment is provided with a first adjustment baffle 3031 and a second adjustment baffle 3032, which, in combination, form a through hole T. Furthermore, during the relative movement of the first adjustment baffle 3031 and the second adjustment baffle 3032, the size of the through hole T can be adjusted, thereby enabling precise control of the radial size of the ion beam B passing through the through hole T, thereby forming a narrow scanning zone S. This facilitates precise definition of the implantation scanning area, avoids the formation of transition areas between different implantation scanning areas, ensures precise implantation compensation in each area, and improves the performance of the semiconductor structure.

[0041] The following is combined with Figures 6 to 12 , specifically describe the ion implantation device provided in this embodiment.

[0042] Please continue reading Figure 6 The ion implantation apparatus provided in this embodiment is used to achieve precise scanning implantation of various areas on the surface of a wafer 10. The ion implantation apparatus includes an ion source unit 20, an ion beam transmission unit 30, and an implantation chamber 40. The ion source unit 20 is used to emit an ion beam B; the ion beam transmission unit 30 is used to screen, adjust, and transmit the ion beam B; and the implantation chamber 40 is used to accommodate the wafer 10 and provide space and the required environment for implantation scanning.

[0043] Specifically, the internal structure of the ion source unit 20 generally includes an ionization chamber, an anode assembly and a gas supply system, etc., so as to convert the gaseous substance into the required ions by using an electric field or thermodynamic method. The doping ions commonly used in semiconductor processes are mainly P-type ions and N-type ions, such as boron ions, phosphorus ions or arsenic ions. And after the ion source unit 20 forms the ion beam B, the ion beam B will enter the ion beam transmission unit 30 at a certain speed. The injection chamber 40 includes a carrier 401. The carrier 401 is used to carry the wafer 10 so that the adjusted ion beam B can be scanned to the surface of the wafer 10. At the same time, during the scanning process, the carrier 401 can drive the wafer 10 to move along the Z-axis direction to achieve full-area injection scanning of the wafer 10.

[0044] See also Figure 6 and Figure 7, the ion beam transmission unit 30 generally includes a mass selection module 301, an ion acceleration module 302 and a focusing scanning module 303. The mass selection module 301 includes a mass selection magnet to form a preset magnetic field for screening ions with a specific mass and charge state in the ion beam B. The ion acceleration module 302 is provided with some magnetic fields and / or electric fields for accelerating the ion beam B after screening, so that the ion beam B obtains sufficient kinetic energy to penetrate the surface of the wafer 10 and reach the expected injection depth. The focusing scanning module 303 is used to focus and scan the accelerated ion beam B. Among them, the focusing link is used to adjust the beam diameter and divergence angle of the ion beam B; the scanning link is used to control the scanning movement of the ion beam B on the surface of the wafer 10 by mechanical or electromagnetic means, that is, to form a scanning belt S. Since the width of the scanning belt S formed in the prior art is too large, it is difficult to accurately define the boundary of the ion injection area, and it is easy to form a wider injection transition area, which affects the injection effect. Therefore, the ion implantation device provided in this embodiment is provided with the first adjustment baffle 3031 and the second adjustment baffle 3032 in the focusing scanning module 303, which are used to adjust the size of the ion beam B and then adjust the width W of the scanning band S to optimize the ion implantation effect.

[0045] Furthermore, the first adjustment baffle 3031 and the second adjustment baffle 3032 are capable of relative movement to form through holes T of different sizes, so that after the ion beam B is adjusted through the through hole T, a scanning zone S of a preset size is formed in the implantation chamber 40. Preferably, the focus scanning module 303 further includes a scanning plate 3034 and a calibration magnet 3033 disposed adjacent to each other. The first adjustment baffle 3031 and the second adjustment baffle 3032 are disposed on a side of the scanning plate 3034 away from the calibration magnet 3033, so that the ion beam B sequentially passes through the through hole T formed by the first adjustment baffle 3031 and the second adjustment baffle 3032, and the magnetic field region formed by the scanning plate 3034 and the calibration magnet 3033, before being incident on the surface of the wafer 10 in the implantation chamber 40. It should be noted that this embodiment does not limit the specific arrangement positions of the first adjustment baffle 3031 and the second adjustment baffle 3032 , and they can also be arranged at other positions in the transmission path within the ion beam transmission unit 30 .

[0046] See also Figure 6 and Figure 8The first adjustment baffle 3031 and the second adjustment baffle 3032 are arranged in parallel directions and perpendicular to the propagation direction of the ion beam B to ensure precise adjustment of the beam diameter of the ion beam B. Furthermore, along the propagation direction K of the ion beam B, the first adjustment baffle 3031 and the second adjustment baffle 3032 are spaced apart and can move toward or away from each other along their own setting direction K. It will be understood that the first adjustment baffle 3031 and the second adjustment baffle 3032 provided in this embodiment adjust the size of the through hole T by adjusting their relative displacement. Therefore, to extend the service life of the first adjustment baffle 3031 and the second adjustment baffle 3032 and prevent wear of the plates due to excessive contact friction when they move relative to each other, the first adjustment baffle 3031 and the second adjustment baffle 3032 in this embodiment are spaced apart and maintained at a certain distance perpendicular to their own setting direction K. This embodiment does not specifically limit the size of this distance and can be adjusted appropriately while ensuring the blocking effect.

[0047] Furthermore, to form the through hole T required for adjustment, the first adjustment baffle 3031 and the second adjustment baffle 3032 each have an inner sidewall N and an outer sidewall M facing each other along the arrangement direction K of the first adjustment baffle 3031 and the second adjustment baffle 3032. The inner sidewall N of the first adjustment baffle 3031 and the inner sidewall N of the second adjustment baffle 3032 are disposed opposite each other, and both the inner sidewall N of the first adjustment baffle 3031 and the inner sidewall N of the second adjustment baffle 3032 are curved surfaces, thereby forming the through hole T through the combination of the two inner sidewalls N. The specific morphology of the curved surface is not limited in this embodiment.

[0048] Preferably, to ensure precise adjustment of the size of the ion beam B, the shape and size of the through hole T need to be precisely controlled. Therefore, in this embodiment, the first adjustment baffle 3031 and the second adjustment baffle 3032 have the same size and shape. Furthermore, the inner sidewall N of the first adjustment baffle 3031 and the inner sidewall N of the second adjustment baffle 3032 both have regular arcuate surfaces, and along the arrangement direction K of the first adjustment baffle 3031 and the second adjustment baffle 3032, the two inner sidewalls N protrude in opposite directions. With the combination of the two inner sidewalls N, the through hole T has a regular circular or quasi-circular shape, so as to match the linear beam shape of the ion beam B, thereby constraining the size of the ion beam B in the radial direction of the ion beam B.

[0049] Furthermore, the outer wall M of the first adjustment baffle 3031 and the outer wall M of the second adjustment baffle 3032 can be rectangular, arc-shaped, or other irregular shapes. However, to ensure effective blocking of the ion beam B while reducing manufacturing costs, preferably, the outer wall M of the first adjustment baffle 3031 and the outer wall M of the second adjustment baffle 3032 are also arc-shaped, and along the arrangement direction K of the first adjustment baffle 3031 and the second adjustment baffle 3032, the two outer walls M protrude in opposite directions, thereby making the first adjustment baffle 3031 and the second adjustment baffle 3032 both fin-shaped, and the structure formed by the first adjustment baffle 3031 and the second adjustment baffle 3032 has an axisymmetric morphology, so as to facilitate precise control of the morphology and size of the through hole T.

[0050] Optionally, the thickness of the first regulating baffle 3031 and the second regulating baffle 3032 are both in the range of 1 cm to 5 cm to ensure a better blocking effect. The material of the first regulating baffle 3031 and the second regulating baffle 3032 is preferably graphite to prevent environmental pollution inside the device structure while achieving the blocking effect. And, optionally, as Figure 8 and Figure 9 As shown, along the arrangement direction K of the first adjustment baffle 3031 and the second adjustment baffle 3032, the length L1 of the outer wall M of the first adjustment baffle 3031 and the outer wall M of the second adjustment baffle 3032 are both in the range of 45 cm to 50 cm, for example, 45 cm, 48 cm, or 80 cm. The length L2 of the inner wall N of the first adjustment baffle 3031 and the inner wall N of the second adjustment baffle 3032 are both in the range of 30 cm to 40 cm, for example, 30 cm, 35 cm, or 40 cm.

[0051] For further information, please refer to Figure 8 When the first adjustment baffle 3031 and the second adjustment baffle 3032 move toward each other, that is, when the first adjustment baffle 3031 moves along the second direction V2 and the second adjustment baffle 3032 moves along the first direction V1, they move closer to each other, and the size of the through hole T decreases. When the first adjustment baffle 3031 and the second adjustment baffle 3032 move away from each other, that is, when the first adjustment baffle 3031 moves along the first direction V1 and the second adjustment baffle 3032 moves along the second direction V2, they move away from each other, and the size of the through hole T decreases. Preferably, the maximum length L3 of the through hole T ranges from 0.6 cm to 2 cm, and the maximum height H of the through hole T ranges from 0.9 cm to 3 cm.

[0052] Based on this, Figure 6 、 Figure 8 and Figure 10 As shown, when the first adjustment baffle 3031 and the second adjustment baffle 3032 move toward each other, the size of the through hole T is reduced, and the ion beam B transmitted to the through hole T, under the size constraint of the through hole T, enters the scanning plate 3034 in a small beam wave spot. Then, after being adjusted by the magnetic field formed by the calibration magnet 3033, a narrower scanning band S can be formed, thereby accurately locating the boundary of each annular area during the ion implantation process. And it has been verified by the applicant that it can be obtained Figure 11 and Figure 12 The ion implantation effect shown avoids the formation of a transition region and achieves precise implantation compensation for each annular region.

[0053] Based on the same concept, this embodiment further provides a semiconductor structure, which is manufactured using the aforementioned ion implantation device.

[0054] In summary, the ion implantation apparatus provided in this embodiment is provided with a first adjustment baffle 3031 and a second adjustment baffle 3032, which, in combination, form a through hole T. Furthermore, by adjusting the size of the through hole T during the relative movement of the first adjustment baffle 3031 and the second adjustment baffle 3032, the radial size of the ion beam B passing through the through hole T can be precisely controlled, thereby forming a narrow scanning band S. This facilitates precise definition of the implantation scanning area, avoids the formation of transition areas between different implantation scanning areas, ensures precise compensation for each area, and improves the performance of the semiconductor structure.

[0055] Furthermore, it should be recognized that although the present invention has been disclosed above with reference to preferred embodiments, the above embodiments are not intended to limit the present invention. Any person skilled in the art will be able to utilize the above-disclosed technical content to make numerous possible variations and modifications to the present invention, or to modify the present invention into equivalent embodiments with equivalent variations, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent variations, and modifications to the above embodiments that do not depart from the present invention and are based on the technical essence of the present invention remain within the scope of protection of the present invention.

Claims

1. An ion implantation device, characterized in that: It includes an ion source unit, an ion beam transmission unit and an implantation chamber; The ion source unit is used to emit an ion beam; The ion beam transmission unit is at least used to transmit the ion beam to the implantation chamber; wherein the ion beam transmission unit includes a first adjustment baffle and a second adjustment baffle, and the first adjustment baffle and the second adjustment baffle are relatively movable to form through holes of different sizes, so that the ion beam forms a scanning zone of a preset size in the implantation chamber after being adjusted by the through holes; The implantation chamber includes a carrier platform; the carrier platform is used to carry a wafer so that the adjusted ion beam can be scanned to the surface of the wafer.

2. The ion implantation apparatus according to claim 1, wherein The first adjustment baffle and the second adjustment baffle are arranged in parallel with each other and perpendicular to the propagation direction of the ion beam; Wherein, along the propagation direction of the ion beam, the first adjustment baffle and the second adjustment baffle are arranged at intervals, and can move toward each other or move away from each other along their own setting directions.

3. The ion implantation apparatus according to claim 1 or 2, characterized in that: Along the setting direction of the first adjustment baffle and the second adjustment baffle, the first adjustment baffle and the second adjustment baffle both have relative inner and outer walls; wherein, the inner wall of the first adjustment baffle and the inner wall of the second adjustment baffle are relatively set, and the inner wall of the first adjustment baffle and the inner wall of the second adjustment baffle are both curved surfaces, so as to form the through hole in combination.

4. The ion implantation apparatus according to claim 3, wherein: The inner side wall of the first adjustment baffle and the inner side wall of the second adjustment baffle are both arc-shaped surfaces, and along the arrangement direction of the first adjustment baffle and the second adjustment baffle, the protruding directions of the two inner side walls are opposite.

5. The ion implantation apparatus according to claim 4, wherein: The outer side walls of the first adjustment baffle and the outer side walls of the second adjustment baffle are both arc-shaped, and along the setting direction of the first adjustment baffle and the second adjustment baffle, the protruding directions of the two outer side walls are opposite, so that the first adjustment baffle and the second adjustment baffle are both fin-shaped.

6. The ion implantation apparatus according to claim 5, wherein: The thickness range of the first adjustment baffle and the second adjustment baffle is: 1cm~5cm; and along the setting direction of the first adjustment baffle and the second adjustment baffle, the length range of the outer side wall of the first adjustment baffle and the outer side wall of the second adjustment baffle is: 45cm~50cm; the length range of the inner side wall of the first adjustment baffle and the inner side wall of the second adjustment baffle is: 30cm~40cm.

7. The ion implantation apparatus according to claim 1, wherein When the first adjustment baffle and the second adjustment baffle move toward each other, the size of the through hole decreases; when the first adjustment baffle and the second adjustment baffle move away from each other, the size of the through hole increases.

8. The ion implantation apparatus according to claim 1, wherein The maximum length range of the through hole is 0.6 cm to 2 cm; the maximum height range of the through hole is 0.9 cm to 3 cm.

9. The ion implantation apparatus according to claim 1, wherein The ion beam transmission unit also includes a scanning plate and a calibration magnet arranged adjacent to each other; the first adjustment baffle and the second adjustment baffle are arranged on the side of the scanning plate away from the calibration magnet, so that the ion beam passes through the through hole formed by the first adjustment baffle and the second adjustment baffle, the magnetic field area formed by the scanning plate and the calibration magnet in sequence, and then is incident on the wafer surface in the injection chamber.

10. A semiconductor structure, characterized in that The semiconductor structure is manufactured using the ion implantation device according to any one of claims 1 to 9.

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