Semiconductor heat treatment equipment

Abstract

According to the semiconductor heat treatment equipment, when the semiconductor heat treatment equipment works, heat provided by a heater is gathered towards a process pipe, so that heat radiation borne by wafers at all positions of a wafer boat in the process pipe is more uniform. The transparent shield covers the heat radiation reflection structure, so that heat radiation is easy to pass through the transparent shield to be transmitted to the wafer boat, in addition, the transparent shield protects the heat radiation reflection structure, corrosion factors such as water vapor and organic matters in the furnace body are prevented from being in contact with the heat radiation reflection structure, the corrosion rate of the heat radiation reflection structure is reduced, and the service life of the furnace body is prolonged. Therefore, the heat radiation reflection structure can optimize the radiation efficiency of heat energy, so that the heat radiation on the wafer at each position in the wafer boat is more uniform, the thin film deposition process of the wafer is ensured to be carried out under high-quality control, the thickness uniformity of thin film deposition in each area on the same wafer is good, and the quality of the wafer is improved. And the film thickness consistency between different wafers is good.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to semiconductor heat treatment equipment. Background Art

[0002] In semiconductor manufacturing, thin film deposition is a critical step in wafer processing. In recent years, technological advancements have led to the gradual adoption of small-batch furnaces for thin film deposition, aiming to improve the equipment's heating and cooling speeds, as well as material loading and unloading efficiency, thereby effectively increasing overall throughput. To meet these demands, existing technologies have generally adopted thermal radiation heating, aiming to achieve faster and more uniform temperature control.

[0003] In such low-volume furnace tube tools, the furnace tube tool's heat radiation device typically relies on an exposed stainless steel reflector to heat the wafers on the wafer boat. However, the stainless steel reflector is susceptible to external contaminants in high-temperature environments, resulting in corrosion and brown spots on the surface. This corrosion not only reduces the efficiency of heat radiation but also negatively affects the heating uniformity of the wafer, resulting in poor thickness uniformity (uniformity) of thin film deposition within each area on the same wafer (within wafer, WiW) and poor thickness consistency between different wafers (wafer to wafer, WTW). This corrosion phenomenon is particularly exacerbated when the rapid cooling unit (RCU) is turned on.

[0004] Therefore, it is urgent to inhibit or avoid the corrosion of the stainless steel reflector to improve the uniformity of thin film deposition on the wafer. Utility Model Content

[0005] The problem solved by the utility model is to provide a semiconductor heat treatment device for improving the cleaning and maintenance cycle and service life of a heat radiation reflection structure in the semiconductor heat treatment device and improving the quality of thin film deposition.

[0006] In order to solve the above problems, the utility model provides a semiconductor heat treatment equipment, which includes a furnace body; a process tube arranged in the furnace body; and a wafer boat arranged in the process tube, the wafer boat being used to carry wafers; a wafer boat base located directly below the furnace body, the wafer boat base being used to carry the wafer boat and drive the wafer boat and the wafer to rotate; a heater located in the furnace body and outside the process tube, being used to provide heat to the process tube to achieve heat treatment of the wafers in the process tube; a heat radiation reflecting structure located in the furnace body, being used to gather the heat provided by the heater to the process tube; and a transparent protective cover located in the furnace body, and covering the heat radiation reflecting structure inside the transparent protective cover, being used to protect the heat radiation reflecting structure.

[0007] Optionally, the thermal radiation reflection structure includes: a first reflection structure, installed at the bottom of the furnace body, the first reflection structure is in the shape of a tube with openings at both ends, and is arranged around the side of the heater away from the process tube; the transparent shield includes a first shield, arranged at the bottom of the furnace body and located inside the furnace body, the first shield covers the first reflection structure, and covers the inner wall, outer wall and top of the first reflection structure in the internal space of the first shield, so as to isolate the first reflection structure from the outside world.

[0008] Optionally, the thermal radiation reflecting structure includes: a first reflecting structure, which is arranged at the bottom of the furnace body, the first reflecting structure is in the shape of a tube with openings at both ends, and is arranged around the side of the heater away from the process tube; the transparent shield includes a first shield, the bottom of the first shield is connected to the bottom of the furnace body, the top of the first shield is connected to the side wall of the furnace body, the first shield and the furnace body form an annular space, the annular space accommodates the first reflecting structure, and the first reflecting structure is isolated from the outside world.

[0009] Optionally, a sealing ring is provided at the portion of the first shield that contacts the furnace body.

[0010] Optionally, the thermal radiation reflection structure includes: a second reflection structure, which is arranged in the furnace body and located above the process tube, and the second reflection structure is plate-shaped; the transparent shield includes a second shield, which is installed on the top of the furnace body and located inside the furnace body, and the second reflection structure is located in the space enclosed by the second shield and the furnace body, so as to isolate the second reflection structure from the outside world.

[0011] Optionally, the semiconductor heat treatment equipment also includes: a top cover structure, which is arranged on the top inner wall of the furnace body; an edge structure, which is arranged on the top inner wall of the furnace body and extends downward from the edge of the top cover structure, the second guard cover is arranged at the end of the edge structure away from the top cover structure, and the second reflective structure is installed on the edge structure and arranged between the top cover structure and the second guard cover.

[0012] Optionally, a sealing ring is provided between the second shield and the edge structure.

[0013] Optionally, a gap is maintained between the transparent shield and the heat radiation reflecting structure.

[0014] Optionally, the material of the transparent shield includes quartz and / or silicon carbide.

[0015] Optionally, the space between the transparent shield and the heat radiation reflecting structure is a vacuum environment, or is filled with colorless inert gas.

[0016] Optionally, there are multiple heaters, which are arranged around the process tube; the first reflective structure is arranged on the periphery of the multiple heaters and maintains a gap with the inner wall of the furnace body.

[0017] Compared with the prior art, the technical solution of the utility model has the following advantages:

[0018] When the semiconductor heat treatment equipment provided by the present invention is in operation, the heater provides heat to the process tube to achieve heat treatment of the wafers in the process tube. The heat radiation reflecting structure is located in the furnace body and is used to concentrate the heat provided by the heater toward the process tube, so that the heat radiation received by the wafers at various positions of the wafer boat in the process tube is more uniform, thereby reducing the problem of local overheating or uneven heating in the wafer boat. The transparent shield covers the heat radiation reflecting structure inside the transparent shield. Because the transparent shield is transparent, it has a small obstruction effect on heat radiation, allowing heat radiation to easily pass through the transparent shield and transmit to the wafer boat. In addition, the transparent shield protects the heat radiation reflecting structure, preventing corrosive factors such as water vapor and organic matter in the furnace body from contacting the heat radiation reflecting structure, reducing the corrosion rate of the heat radiation reflecting structure, thereby optimizing the heat energy radiation efficiency of the heat radiation reflecting structure, making the heat radiation received by the wafers at various positions in the wafer boat more uniform, ensuring that the thin film deposition process of the wafers is carried out under high-quality control, and ensuring that the thickness uniformity of the thin film deposition in various regions on the same wafer is good, and the film thickness consistency between different wafers is good. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a structural diagram of an embodiment of the semiconductor heat treatment equipment of the present utility model;

[0020] Figure 2 yes Figure 1 Cross-sectional view at AA in the middle;

[0021] Figure 3 It is a structural schematic diagram of another embodiment of the semiconductor heat treatment equipment of the present utility model;

[0022] Figure 4 It is a partial schematic diagram of the top of the furnace body in the semiconductor heat treatment equipment of the present invention. DETAILED DESCRIPTION

[0023] As can be seen from the background technology, the primary technical problem of this invention lies in effectively addressing the temperature instability caused by surface corrosion of stainless steel reflectors. Corrosion shortens reflector cleaning cycles and reduces their lifespan, which directly impacts machine stability, leading to poor thickness uniformity across different regions of the same wafer and poor thickness consistency across different wafers.

[0024] To solve the technical problem, the semiconductor heat treatment equipment provided by the present invention provides heat to the process tube during operation to achieve heat treatment of the wafers in the process tube. The heat radiation reflecting structure is located in the furnace body and is used to concentrate the heat provided by the heater toward the process tube, so that the heat radiation received by the wafers at various positions of the wafer boat in the process tube is more uniform, thereby reducing the problem of local overheating or uneven heating in the wafer boat. The heat radiation reflecting structure is covered by a transparent shield inside the transparent shield. Because the transparent shield is transparent, it has little obstruction to heat radiation, allowing heat radiation to easily pass through the transparent shield and transmit to the wafer boat in the process tube. In addition, the transparent shield protects the heat radiation reflecting structure, preventing corrosive factors such as water vapor and organic matter in the furnace body from contacting the heat radiation reflecting structure, reducing the corrosion rate of the heat radiation reflecting structure, thereby optimizing the heat energy radiation efficiency of the heat radiation reflecting structure, making the heat radiation received by the wafers at various positions in the wafer boat more uniform, ensuring that the thin film deposition process of the wafers is carried out under high-quality control, and ensuring that the thickness of the thin film deposited in each area on the same wafer is uniform, and the thickness of the thin film between different wafers is consistent.

[0025] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0026] refer to Figures 1 to 4 , an embodiment of the utility model also provides a semiconductor heat treatment device.

[0027] like Figure 1 and 2 As shown, Figure 2 yes Figure 1 The cross-sectional view at AA in FIG. 1 shows a semiconductor thermal processing apparatus for performing a thin film deposition process on a wafer, comprising: a furnace body 100 (such as Figure 1 ); a process tube 104 disposed in the furnace body 100; and a wafer boat 101 (Boat) disposed in the process tube 104 (as shown); Figure 1 As shown), the wafer boat 101 is used to carry the wafer; the wafer boat base 102 is located directly below the furnace body 100, the wafer boat base 102 is used to carry the wafer boat 101, drive the wafer boat 101 and the wafer to rotate, and the wafer boat base 102 is also used to carry the wafer boat 101 into or out of the inner cavity of the process tube 104; the heater 103 (as shown) Figure 1 As shown), it is located inside the furnace body 100 and outside the process tube 104, and is used to provide heat to the process tube 104 to achieve heat treatment of the wafers in the process tube 104; the thermal radiation reflecting structure 105 is located inside the furnace body 100, and is used to gather the heat provided by the heater 103 to the process tube 104; the transparent shield 106 is located inside the furnace body 100, and covers the thermal radiation reflecting structure 105 inside the transparent shield, and is used to protect the thermal radiation reflecting structure 105.

[0028] The semiconductor heat treatment equipment provided by the present invention is a multifunctional equipment used for performing process treatment on wafers, specifically including thin film deposition process, ion diffusion doping at high temperature, thermal oxidation process, annealing process, etc. In the embodiment of the present invention, the semiconductor heat treatment equipment is used for thin film deposition process to illustrate the improvement of the quality of wafer process treatment by the transparent protective cover 106.

[0029] When the semiconductor heat treatment equipment provided by the present invention is working, the heater 103 provides heat to the process tube 104 to achieve heat treatment of the wafers in the process tube 104. The heat radiation reflecting structure 105 is located in the furnace body 105 and is used to gather the heat provided by the heater 103 to the process tube 104, so that the heat radiation received by the wafers at various positions of the wafer boat 101 in the process tube 104 is more uniform, thereby reducing the problem of local overheating or uneven heating in the wafer boat 101. The transparent shield 106 covers the thermal radiation reflecting structure 105 inside the transparent shield. Because the transparent shield 106 is transparent, it has little obstruction to thermal radiation, making it easy for thermal radiation to pass through the transparent shield 106 and be transmitted to the wafer boat 101. In addition, the transparent shield 106 protects the thermal radiation reflecting structure 105, preventing corrosion factors such as water vapor and organic matter in the furnace body 100 from contacting the thermal radiation reflecting structure 105, reducing the corrosion rate of the thermal radiation reflecting structure 105, thereby optimizing the thermal radiation efficiency of the thermal radiation reflecting structure 105, making the thermal radiation received by the wafers at various positions in the wafer boat 101 more uniform, ensuring that the thin film deposition process of the wafers is carried out under high-quality control, making the thickness uniformity of the thin film deposition in various regions on the same wafer good, and the consistency of the film thickness between different wafers good.

[0030] The furnace body 100 is used to ensure that the thin film deposition process in the furnace body 100 is not disturbed by the external environment. The furnace body 100 provides the required process space for the thin film deposition process of the wafer.

[0031] The process tube 104 is disposed in the furnace body 100 and is used as a reaction area for thermal treatment of wafers, forming a controlled reaction environment.

[0032] First, the arrangement of the process tube 104 isolates the wafers in the wafer boat 101 from the external environment, preventing external impurities and pollutants from entering the reaction area, thereby ensuring the cleanliness of the wafer surface and the stability of the process, which is conducive to promoting uniform deposition of the thin film.

[0033] In this embodiment, the process tube 104 is made of high-purity quartz or other high-temperature-resistant and corrosion-resistant materials, which can maintain structural and chemical stability under high temperature and corrosive atmospheres. Specifically, the process tube 104 is made of quartz tube.

[0034] The wafer boat 101 is used to support and position the wafer so that the wafer maintains an appropriate position and orientation during the thin film deposition process, thereby enabling uniform thin film deposition.

[0035] In this embodiment, the wafer boat 101 is located at the center of the furnace body 100, which is conducive to uniform heat reception for wafers at all locations on the wafer boat 101. In addition, the wafer boat 101 needs to be made of a material that can withstand high temperatures and remain stable.

[0036] It should be noted that the wafer boat 101 has a multi-layer structure, and each layer is used to place wafers, allowing multiple wafers to be processed simultaneously during a single heat treatment process, significantly improving the throughput of semiconductor heat treatment equipment and increasing production efficiency.

[0037] In this embodiment, the wafer boat 101 is placed in a quartz tube 104. This placement of the wafer boat 101 within the quartz tube 104 protects the wafer boat 101, particularly during semiconductor manufacturing processes in high-temperature, highly corrosive environments. Quartz, due to its high-temperature stability and low reactivity, protects the wafer boat 101 from direct environmental damage.

[0038] The wafer boat base 102 is located directly below the furnace body 100 and is used to carry the wafer boat 101 into or out of the inner cavity of the process tube 104, while being able to stably support the wafer boat 101. The wafer boat base 102 is also used to drive the wafer boat 101 and the wafer to rotate. Through the rotational motion, the wafer surface is evenly exposed to the process gas and heat radiation, which makes it less likely to have differences in film thickness and performance caused by uneven temperature distribution and uneven distribution of process gas, thereby improving the quality of thin film deposition.

[0039] The heater 103 is located within the furnace body 100 and outside the process tube 104. This allows the heater 103 to efficiently provide heat to the process tube 104 while avoiding direct contact with the reaction atmosphere within the process tube 104. This prevents adverse reactions between the material in the heater 103 and the reaction gases, thereby extending the service life of the heater 103. Furthermore, the heater 103 provides heat through thermal radiation, enabling the temperature within the process tube 104 to reach the desired process temperature range, meeting the temperature requirements of the wafer thin film deposition process.

[0040] In this embodiment, multiple heaters 103 are provided, and are arranged around the process tube 104. Therefore, when the semiconductor thermal processing equipment is in operation, the wafer is heated by the heaters 103 on all sides, resulting in a more uniform heat distribution on the wafer. This results in a more uniform thickness of thin films deposited in different regions on the same wafer, and also in a more consistent thickness of thin films between different wafers.

[0041] Specifically, the heater 103 generates heat through a resistance wire, which has a fast temperature response time and can quickly adjust the temperature to meet the temperature requirements of different stages in the thin film deposition process.

[0042] When the semiconductor heat treatment equipment is working, the heat radiation reflecting structure 105 is located in the furnace body 100, and is used to reflect the heat energy generated by the heater 103, so that the heat generated by the heater 103 is concentrated to the process tube 104, so that the wafers in the wafer boat 101 in the process tube 104 are heated evenly; in addition, because the heat radiation reflecting structure 105 is located between the heater 103 and the furnace body 100, the heat radiation reflecting structure 105 also plays the role of heat insulation and increasing the effective utilization of energy, preventing or reducing the heat generated by the heater 103 from being absorbed and consumed after being radiated to the furnace body 100.

[0043] In this embodiment, the thermal radiation reflecting structure 105 includes: a first reflecting structure 1051, which is installed at the bottom of the furnace body 100, and the first reflecting structure 1051 is in the shape of a tube with two ends open, and is arranged around the side of the heater 103 away from the process tube 104; the transparent protective cover 106 includes a first protective cover 1061, which is arranged at the bottom of the furnace body 100 and is located inside the furnace body 100, and the first protective cover 1061 covers the first reflecting structure 1051, and covers the inner wall, outer wall and top of the first reflecting structure 1051 in the internal space of the first protective cover 1061, so as to isolate the first reflecting structure 1051 from the outside world.

[0044] During operation of the semiconductor heat treatment equipment, the first reflective structure 1051 surrounds the process tube 104, effectively concentrating and reflecting heat provided by the heater 103. This allows the heat energy to be more concentrated within the process tube 104, thereby improving heat radiation efficiency and ensuring uniform heating of the wafers. The first shield 1061 of the transparent shield 106 is disposed at the bottom of the furnace body 100 and covers the first reflective structure 1051. This shield 1061 encloses the inner and outer walls and top of the first reflective structure 1051 within the interior space of the first shield 1061. The first shield 1061 is transparent, allowing heat radiation to pass through while isolating the first reflective structure 1051 from the internal environment of the furnace body 100, preventing corrosive factors (such as moisture and organic matter) from contacting the first reflective structure 1051. This isolation reduces the corrosion rate of the first reflective structure 1051, extending its cleaning and maintenance cycles and service life, and ensuring long-term stability in the thermal radiation reflection performance of the first reflective structure 1051.

[0045] In other embodiments, Figure 3As shown, the thermal radiation reflecting structure 105 includes: a first reflecting structure 1051, which is arranged at the bottom of the furnace body 100, and the first reflecting structure 1051 is in the shape of a tube with openings at both ends, and is arranged around the side of the heater 103 away from the process tube 104; the transparent shield 106 includes a first shield 1061, the bottom of the first shield 1061 is connected to the bottom of the furnace body 100, and the top of the first shield 1061 is connected to the side wall of the furnace body 100, and the first shield 1061 and the furnace body 100 form an annular space 109, which accommodates the first reflecting structure 1051, thereby isolating the first reflecting structure 1051 from the outside world.

[0046] The cylindrical structure of the first reflective structure 1051 allows its reflective surface to surround the process tube 104 360 degrees, maximizing the radiation of heat provided by the heater 103 into the process tube 104 and ensuring uniform thermal radiation to the wafers during the deposition process. This wraparound reflective layout reduces temperature gradients between locations within the wafer boat 101, preventing localized overheating or uneven heating, thereby improving the thickness uniformity and consistency of thin film deposition on the wafers. The bottom of the first shield 1061 of the transparent shield 106 is connected to the bottom of the furnace body 100, and the top is connected to the sidewall of the furnace body 100. The first shield 1061 and the furnace body 100 together form an annular space 109, within which the first reflective structure 1051 is located. The first shield 1061 serves to enclose the first reflective structure 1051 in a controlled environment, preventing contact between the heat radiation reflective structure 105 and corrosive substances such as moisture and organic matter in the furnace body 100, thereby reducing its corrosion rate and extending the cleaning cycle and service life of the heat radiation reflective structure 105.

[0047] It should be noted that the first reflective structure 1051 is disposed outside the plurality of heaters 103 and maintains a gap from the inner wall of the furnace body 100. This means that the first reflective structure 1051 does not contact the furnace body 100, allowing it to expand and contract freely under the high temperatures encountered during operation without being restricted or compressed by the furnace body 100. Because the first reflective structure 1051 and the furnace body 100 are made of different materials and have different coefficients of thermal expansion, avoiding direct contact prevents deformation or damage to the first reflective structure 1051 or the furnace body 100 due to differential thermal expansion and contraction.

[0048] In this embodiment, the thermal radiation reflecting structure 105 includes: a second reflecting structure 1052, which is arranged in the furnace body 100 and located above the process tube 104, and the second reflecting structure 1052 is plate-shaped; the transparent protective cover 106 also includes a second protective cover 1062, and the second protective cover 1062 is installed on the top of the furnace body 100 and located inside the furnace body 100. The second reflecting structure 1052 is located in the space enclosed by the second protective cover 1062 and the furnace body 100, so as to isolate the second reflecting structure 1052 from the outside world.

[0049] The second reflective structure 1052 is plate-shaped and effectively reflects heat radiated upward from the heater 103 into the process tube 104. This ensures uniform heat radiation to the wafers in the wafer boat 101 within the process tube 104, accelerating the temperature rise and ensuring uniform thickness during thin film deposition. Furthermore, the second reflective structure 1052 is located within the space enclosed by the second shield 1062 and the furnace body 100. The second shield 1062 is transparent, allowing heat radiation to pass through while isolating the second reflective structure 1052 from the internal environment of the furnace body 100, preventing corrosion from corrosive substances such as high-temperature water vapor and organic matter, thereby maintaining stable thermal radiation reflection performance.

[0050] Specifically, if Figure 4 As shown, the semiconductor heat treatment equipment includes: a top cover structure 107, which is arranged on the top inner wall of the furnace body 100; an edge structure 108, which is arranged on the top inner wall of the furnace body 100 and extends downward from the edge of the top cover structure 107, a second shield 1062 is arranged at the end of the edge structure 108 away from the top cover structure 107, and a second reflective structure 1052 is installed on the edge structure 108 and is arranged between the top cover structure 107 and the second shield 1062.

[0051] The edge structure 108 is disposed on the top inner wall of the furnace body 100 and extends downward from the edge of the top cover structure 107. Its function is to connect the top cover structure 107 and the second shield 1062. The second shield 1062 is disposed at the end of the edge structure 108 away from the top cover structure 107 and isolates the second reflective structure 1052 from moisture, corrosive gases, or particles within the furnace body 100. While not affecting the passage of thermal radiation, the second shield 1062 prevents damage to the second reflective structure 1052 by moisture, corrosive gases, or particles. This ensures that the second reflective structure 1052 consistently maintains strong thermal radiation reflection capabilities, facilitating uniform heating of the wafers in the wafer boat 101 and improving thin film deposition quality. Furthermore, the combined structure of the top cover structure 107 and edge structure 108 forms an inverted U-shaped cross-section, providing high structural strength and providing stable support for the second reflective structure 1052 and the transparent shield 106.

[0052] It should be noted that the second reflective structure 1052 at least covers the upper portion of the wafer boat 101 , and is used to reflect heat back to the wafer boat 101 to the greatest extent possible, thereby improving thermal energy utilization.

[0053] In this embodiment, the thermal radiation reflective structure 105 includes a first reflective structure 1051 and a second reflective structure 1052. The first shield 1061 of the transparent shield 106 isolates and protects the first reflective structure 1051, while the second shield 1062 of the transparent shield 106 isolates and protects the second reflective structure 1052. The combination of the first reflective structure 1051 and the second reflective structure 1052 creates an efficient thermal radiation environment around the wafer boat 101, ensuring uniform heating across all wafer locations, reducing temperature gradients, and improving thickness uniformity and consistency of thin film deposition. While transmitting thermal radiation, the first and second shields 1061 and 1062 isolate the corresponding first and second reflective structures 1051 and 1052 from corrosive environments, preventing corrosion from high-temperature moisture, organic matter, and the like. When the semiconductor heat treatment equipment is working, the heat radiation reflection structure 105 gathers the heat from the side and top of the heater 103 to the wafer boat 101, making the heat distribution on the wafer more uniform, so that the thickness of the thin film deposited in each area on the same wafer is uniform, and the film thickness consistency between different wafers is good.

[0054] In this embodiment, a sealing ring (not shown) is provided at the portion where the first shield 1061 contacts the furnace body 100. The sealing ring is used to form a reliable airtight seal at the connection between the first shield 1061 and the furnace body 100, preventing corrosive or polluting substances such as gases, particulate matter, water vapor, and organic matter from the external environment from entering the first shield 1061, thereby protecting the heat radiation reflective structure 105 from corrosion and contamination.

[0055] Likewise, a sealing ring is provided at the contact portion between the second shield 1062 and the edge structure 108 .

[0056] In this embodiment, a gap is maintained between the transparent shield 106 and the thermal radiation reflecting structure 105. In other words, the transparent shield 106 and the thermal radiation reflecting structure 105 do not contact each other. This means that in the high-temperature environment in which the device operates, the thermal radiation reflecting structure 105 can freely expand and contract without being restricted or compressed by the transparent shield 106. Because the transparent shield 106 and the thermal radiation reflecting structure 105 are made of different materials and have different thermal expansion coefficients, avoiding direct contact can prevent deformation or damage to the transparent shield 106 or the thermal radiation reflecting structure 105 due to the difference in thermal expansion and contraction.

[0057] It should be noted that the transparent shield 106 is designed to match the heat radiation reflection structure 105 in size and shape, but a certain space gap is retained between the two, which is conducive to improving the integration of semiconductor heat treatment equipment.

[0058] In this embodiment, the transparent shield 106 is made of quartz and / or silicon carbide. This allows the transparent shield 106 to maintain excellent mechanical strength and thermal radiation transmittance even at high temperatures. Quartz has high light transmittance and excellent thermal shock resistance, making it suitable for high-temperature, high-purity semiconductor processing environments. Silicon carbide has higher thermal conductivity and hardness, and exhibits excellent chemical stability at high temperatures.

[0059] In this embodiment, a vacuum environment exists between the transparent shield 106 and the thermal radiation reflective structure 105. First, the vacuum environment has extremely low thermal conductivity, minimizing heat exchange between the thermal radiation reflective structure 105 and the transparent shield 106. This ensures that the heat provided by the heater 103 is efficiently reflected and concentrated onto the wafer boat 101. This promotes uniform heating of the wafers and improves the quality and consistency of the thin film deposition process. Second, the vacuum environment isolates corrosive media such as oxygen, water vapor, and organic matter, preventing them from reacting with the thermal radiation reflective structure 105.

[0060] In other embodiments, the space between the transparent protective cover 106 and the thermal radiation reflecting structure 105 may also be filled with colorless inert gas (such as nitrogen, argon, etc.).

[0061] In this embodiment, the heat radiation reflective structure 105 is made of stainless steel. In other embodiments, the heat radiation reflective structure can also be made of a highly heat-resistant and corrosion-resistant material, such as stainless steel or a high-chromium alloy. This helps prevent the heat radiation reflective structure from being easily corroded even when exposed to external contaminants in a high-temperature environment for a long time, thereby extending the cleaning and maintenance cycle of the heat radiation reflective structure and improving its service life.

[0062] In this embodiment, the heat radiation reflective structure 105 has a coating on its surface. The coating effectively prevents corrosive factors in the environment (such as water vapor and organic matter) from directly contacting the heat radiation reflective structure 105, thereby reducing the corrosion rate. Specifically, the coating material includes one or more of zinc, nickel, and chromium.

[0063] Although the present invention is disclosed as above, it is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined by the claims.

Claims

1. A semiconductor heat treatment device, characterized in that: include: furnace body; a process tube disposed in the furnace body; and a wafer boat disposed in the process tube, the wafer boat being used to carry wafers; A wafer boat base is located directly below the furnace body and is used to support the wafer boat and drive the wafer boat and wafers to rotate; A heater is located in the furnace body and outside the process tube, and is used to provide heat to the process tube to achieve heat treatment of the wafers in the process tube; a heat radiation reflecting structure, located in the furnace body, for collecting the heat provided by the heater toward the process pipe; A transparent shield is located in the furnace body and covers the heat radiation reflecting structure inside the transparent shield to protect the heat radiation reflecting structure.

2. The semiconductor heat treatment equipment according to claim 1, wherein The heat radiation reflecting structure comprises: a first reflecting structure, mounted on the bottom of the furnace body, the first reflecting structure being in the shape of a cylinder with two ends open, and being arranged around a side of the heater away from the process tube; The transparent shield includes a first shield, which is arranged at the bottom of the furnace body and located within the furnace body. The first shield covers the first reflective structure, and the inner wall, outer wall and top of the first reflective structure are covered in the internal space of the first shield, thereby isolating the first reflective structure from the outside world.

3. The semiconductor heat treatment equipment according to claim 1, wherein The heat radiation reflecting structure comprises: a first reflecting structure, disposed at the bottom of the furnace body, the first reflecting structure being in the shape of a cylinder with two ends open, and surrounding the heater on a side away from the process tube; The transparent shield includes a first shield, the bottom of which is connected to the bottom of the furnace body, and the top of which is connected to the side wall of the furnace body. The first shield and the furnace body form an annular space, and the annular space accommodates the first reflective structure to isolate the first reflective structure from the outside world.

4. The semiconductor heat treatment equipment according to claim 2 or 3, characterized in that A sealing ring is provided at the portion where the first shield contacts the furnace body.

5. The semiconductor heat treatment equipment according to claim 1, wherein The heat radiation reflecting structure comprises: a second reflective structure, disposed in the furnace body and above the process tube, the second reflective structure being in a plate shape; The transparent shield includes a second shield, which is installed on the top of the furnace body and located inside the furnace body. The second reflective structure is located in the space enclosed by the second shield and the furnace body, thereby isolating the second reflective structure from the outside world.

6. The semiconductor heat treatment equipment according to claim 5, wherein The semiconductor heat treatment equipment further comprises: A top cover structure, arranged on the top inner wall of the furnace body; The edge structure is arranged on the top inner wall of the furnace body and extends downward from the edge of the top cover structure. The second shield is arranged at the end of the edge structure away from the top cover structure. The second reflective structure is installed on the edge structure and is arranged between the top cover structure and the second shield.

7. The semiconductor heat treatment equipment according to claim 6, wherein: A sealing ring is provided between the second shield and the edge structure.

8. The semiconductor heat treatment equipment according to claim 1, wherein A gap is maintained between the transparent shield and the heat radiation reflecting structure.

9. The semiconductor heat treatment equipment according to claim 1, wherein The transparent cover is made of quartz and / or silicon carbide.

10. The semiconductor heat treatment equipment according to claim 1, wherein The space between the transparent shield and the heat radiation reflecting structure is a vacuum environment, or is filled with colorless inert gas.

11. The semiconductor heat treatment equipment according to claim 2, wherein There are multiple heaters, which are arranged around the process pipe; The first reflective structure is disposed on the periphery of the plurality of heaters and maintains a gap with the inner wall of the furnace body.

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