High-temperature time-dependent breakdown test device

Abstract

The utility model relates to the aging test technology, and discloses a high-temperature time-dependent breakdown test device, which comprises an upper computer, a gateway, a communication adapter plate and a plurality of groups of high-temperature time-dependent breakdown test units, and is characterized in that the upper computer controls the high-temperature time-dependent breakdown test units through the gateway; and the communication adapter plate is used for converting the signal of the high-temperature time-dependent breakdown test unit and transmitting the converted signal to an upper computer. According to the high-temperature time-dependent breakdown test device, the SMU source meter is used for replacing a common direct-current power supply, so that the precision and the stability of the test voltage are ensured; the PA meter is connected to a test loop, the current loop current is directly displayed, a detection circuit is replaced, and interference is reduced; the analog switch is switched through the driving board, and a plurality of devices which are connected in parallel can be connected into the PA meter in turn to realize batch testing.

Description

Technical Field

[0001] The utility model relates to an aging test technology, in particular to a high-temperature time-dependent breakdown test device. Background Art

[0002] During time-dependent breakdown testing, conventional DC power supplies and detection circuits are susceptible to interference and cannot guarantee high accuracy in batch testing. If high-accuracy testing is to be achieved, only single or small device tests can be performed. It's impossible to achieve both simultaneously. Summary of the Invention

[0003] The utility model aims to solve the problem that the prior art cannot simultaneously and well guarantee the accuracy of time-dependent breakdown testing and batch testing, and proposes a high-temperature time-dependent breakdown testing device.

[0004] In order to solve the above technical problems, the present invention is solved by the following technical solutions:

[0005] A high-temperature time-dependent breakdown test device includes a host computer, a gateway, a communication adapter board and an array of high-temperature time-dependent breakdown test units. The host computer controls the high-temperature time-dependent breakdown test units through the gateway, and the communication adapter board is used to convert the signals of the high-temperature time-dependent breakdown test units and transmit them to the host computer.

[0006] Preferably, the high-temperature time-dependent breakdown test unit includes an SMU source meter, an aging board, a driver board and a PA ammeter; there are an array of test devices on the aging board; the SMU source meter applies the aging power supply to the test devices on the aging board; the driver board is used to detect and control the test data of the test devices on the aging board, and the PA ammeter is used to read the leakage current of the test devices.

[0007] Preferably, a switch selection unit, a protection unit and a single-chip microcomputer are provided on the driving board; the protection unit is used to protect the SUM source meter voltage input by the test device of the aging board, and the switch selection unit is used to select the test device of the aging board for testing; the single-chip microcomputer receives the signal of the switch selection unit and the leakage current of the PA ammeter, and communicates with the host computer through the communication adapter board.

[0008] Preferably, a first voltage sampling circuit unit and a second voltage sampling circuit unit are also provided on the driving board; the first circuit sampling unit is used to sample the voltage of the SUM source meter before the test device of the aging board, and the second voltage sampling circuit unit is used to sample the voltage of the SUM source meter after the test device of the aging board.

[0009] Preferably, the protection unit includes one end of the resistor R1 connected to the diode V1, the diode V2 and the resistor R2; the other end of the resistor R1 is connected to the TVS tube D1; the cathode of the diode V1, the anode of the diode V2 and the other end of the TVS tube D1 are connected to the power supply; the other end of the resistor R2 is connected to the capacitor C1 and the switch selection unit, and the other end of the capacitor C1 is grounded.

[0010] Preferably, the array test devices on the burn-in board are connected in parallel.

[0011] The utility model adopts the above technical solution design:

[0012] This high-temperature, time-dependent breakdown device uses an SMU source meter instead of a conventional DC power supply, ensuring the accuracy and stability of the test voltage. Connecting a PA meter to the test loop directly displays the current, replacing the detection circuit and reducing interference. By switching analog switches on the driver board, multiple devices connected in parallel can be connected to the PA meter in turn, enabling batch testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 Schematic diagram of the utility model system;

[0014] Figure 2 Circuit diagram of the high-temperature time-dependent breakdown test unit of the utility model;

[0015] Figure 3 This is a schematic diagram of a high-temperature time-dependent breakdown test unit of the utility model;

[0016] Figure 4 This is a sampling circuit diagram of the utility model. DETAILED DESCRIPTION

[0017] The present invention is described in further detail below with reference to the accompanying drawings and embodiments.

[0018] Example 1

[0019] A high-temperature time-dependent breakdown test device includes a host computer, a gateway, a communication adapter board and an array of high-temperature time-dependent breakdown test units. The host computer controls the high-temperature time-dependent breakdown test units through the gateway, and the communication adapter board is used to convert the signals of the high-temperature time-dependent breakdown test units and transmit them to the host computer.

[0020] exist Figure 1 In this embodiment, 18 groups of high-temperature time-dependent breakdown test units are provided, each group of high-temperature time-dependent breakdown test units includes an SMU source meter, an aging board, a driver board and a PA ammeter; there are array test devices on the aging board; each aging board is provided with 10 groups of test devices; the array test devices on the aging board are connected in parallel with each other.

[0021] The SMU source meter applies aging power to the test device on the aging board; the driver board is used to detect and control the test data of the test device on the aging board, and the PA ammeter is used to read the leakage current of the test device.

[0022] The driver board is equipped with a switch selection unit, a protection unit and a single-chip microcomputer; the protection unit is used to protect the SUM source meter voltage input by the test device of the aging board, and the switch selection unit is used to select the test device of the aging board for testing; the single-chip microcomputer receives the signal of the switch selection unit and the leakage current of the PA ammeter, and communicates with the host computer through the communication adapter board.

[0023] The driving board is also provided with a first voltage sampling circuit unit and a second voltage sampling circuit unit; the first circuit sampling unit is used to sample the voltage of the SUM source meter before the test device of the aging board, and the second voltage sampling circuit unit is used to sample the voltage of the SUM source meter after the test device of the aging board.

[0024] The protection unit includes one end of a resistor R1 connected to a diode V1, a diode V2, and a resistor R2; the other end of the resistor R1 is connected to a TVS tube D1; the cathode of the diode V1, the anode of the diode V2, and the other end of the TVS tube D1 are connected to a power supply; the other end of the resistor R2 is connected to a capacitor C1 and a switch selection unit, and the other end of the capacitor C1 is grounded.

[0025] Example 2

[0026] Based on Example 1, the host computer software of this embodiment runs in an industrial computer, and controls the parameter settings, power output and shutdown of 18 SMU source meters through the gateway; the driver board switches the analog switch to connect the current of each workstation to the PA meter in turn; the driver board communicates with the PA meter through RS232 to obtain the leakage current collection results collected by the PA meter, and at the same time collects the actual voltage applied to both ends of the device. Each driver board transfers the leakage current and voltage data through the RS485 interface and the communication adapter board, and uploads them to the host computer software SUM source meter to apply aging power to each workstation.

[0027] During the aging process, the 10-choose-1 analog switch connects the leakage current of the corresponding station to the PA meter for sampling. Set voltage sampling point 1 at the front end of each station on the aging board and set voltage sampling point at the back end. Collect the voltage at sampling point 1 and sampling point 2 of each station respectively. Figure 4 This is the sampling circuit for sampling points 1 and 2. The actual voltage applied to the device at each station is the voltage at sampling point 1 minus the voltage at sampling point 2. This voltage is used for subsequent automatic voltage compensation calculations. During the aging process, if a station fails due to a short circuit, the current-limiting resistor will limit the current to prevent it from being pulled down, thereby protecting the downstream detection circuitry and PA meter.

Claims

1. A high temperature time breakdown test device, characterized in that: It includes a host computer, a gateway, a communication adapter board, and an array high-temperature time-lapse breakdown test unit. The host computer controls the high-temperature time-lapse breakdown test unit through the gateway. The communication adapter board is used to convert the signal of the high-temperature time-lapse breakdown test unit and transmit it to the host computer. The high-temperature time-lapse breakdown test unit includes an SMU source meter, an aging board, a driver board, and a PA ammeter. There are arrays of test devices on the aging board; the SMU source meter applies aging power to the test devices on the aging board; the driver board is used to detect and control the test data of the test devices on the aging board, and the PA ammeter is used to read the leakage current of the test devices; the driver board is equipped with a switch selection unit, a protection unit, and a single-chip microcomputer; The protection unit is used to protect the SUM source meter voltage input by the test device of the aging board, and the switch selection unit is used to select the test device of the aging board for testing; the microcontroller receives the signal of the switch selection unit and the leakage current of the PA ammeter, and communicates with the host computer through the communication adapter board.

2. A high temperature time breakdown test device according to claim 1, characterized in that: The driving board is also provided with a first voltage sampling circuit unit and a second voltage sampling circuit unit; the first circuit sampling unit is used to sample the voltage of the SUM source meter before the test device of the aging board, and the second voltage sampling circuit unit is used to sample the voltage of the SUM source meter after the test device of the aging board.

3. The high temperature time breakdown test device according to claim 1, characterized in that: The protection unit includes one end of a resistor R1 connected to a diode V1, a diode V2, and a resistor R2; the other end of the resistor R1 is connected to a TVS tube D1; the cathode of the diode V1, the anode of the diode V2, and the other end of the TVS tube D1 are connected to a power supply; the other end of the resistor R2 is connected to a capacitor C1 and a switch selection unit, and the other end of the capacitor C1 is grounded.

4. A high temperature time breakdown test device according to claim 1, characterized in that: The array test devices on the burn-in board are connected in parallel.

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