Chemical vapor deposition (CVD) reaction cavity

By introducing sealing components and heating components into the chemical vapor deposition CVD reaction chamber, the problems of poor sealing and insufficient heat dissipation are solved, and higher sealing and effective thermal management are achieved to prevent leakage and heat damage.

CN223240158UActive Publication Date: 2025-08-19KUNSHAN ZHANGSHENG NANO TECH CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
CN202422120363.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-30
Publication Date
2025-08-19
Estimated Expiration
2034-08-30

AI Technical Summary

Technical Problem

The existing chemical vapor deposition CVD reaction chamber has poor sealing properties, is prone to leakage, and lacks effective heat dissipation measures.

Method used

A chemical vapor deposition CVD reaction chamber including a sealing assembly and a heating assembly is designed. The sealing assembly consists of a lower connecting plate, a positioning hole, an annular sealing groove, a sealing ring, a sealing cover body, an upper connecting plate, a positioning rod and a fixing ring. The positioning and reinforcement of the sealing cover body is achieved through an electric push rod; the heating assembly consists of a heating chamber, a heating coil and a heat dissipation fan, for continuous heating and heat dissipation.

Benefits of technology

Improves the sealing of the reaction chamber, prevents leakage, and prevents damage caused by excessive heat through continuous heating and heat dissipation.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN223240158U_ABST
    Figure CN223240158U_ABST
Patent Text Reader

Abstract

The utility model discloses a chemical vapor deposition (CVD) reaction chamber, which relates to the technical field of miniature fan stator coating preparation and comprises a support table and a sealing assembly, a support frame is mounted on the lower surface of the support table, a reaction chamber is mounted on the upper surface of the support table, and the sealing assembly is arranged on the surface of the support table. The sealing assembly comprises lower connecting plates, positioning holes, an annular sealing groove, a sealing ring, a sealing cover body, an upper connecting plate, a positioning rod and a fixing ring, the lower connecting plates are arranged on the two sides of the upper end of the reaction chamber, the positioning holes are formed in the surfaces of the lower connecting plates, and the annular sealing groove is formed in the upper surface of the reaction chamber. According to the CVD reaction cavity, the reaction cavity can be sealed through the sealing assembly, the sealing performance is high, the leakage phenomenon is not prone to occurring, the reaction cavity can be cooled through the heating assembly in the continuous heating process, and damage caused by too high heat of the reaction cavity is prevented.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The utility model relates to the technical field of micro fan stator coating preparation, in particular to a chemical vapor deposition (CVD) reaction chamber. Background Art

[0002] In order to improve the waterproof, dustproof and corrosion resistance of the micro fan stator, a coating is set on its surface. Usually, the chemical vapor deposition process is used to produce the coating film on the surface of the micro fan stator. Chemical vapor deposition is a chemical technology that mainly uses gaseous or vaporous compounds containing film elements to chemically react on the substrate surface to form solid deposits. In order to better perform this process, a chemical vapor deposition (CVD) reaction chamber is required. However, the current chemical vapor deposition (CVD) reaction chamber still has the following shortcomings:

[0003] For example, patent publication number CN213232483U discloses a low-temperature, low-pressure chemical vapor deposition (LTCP) reaction chamber. This chamber's vertical distance can be adjusted by changing the longitudinal distance of telescopic rods, improving the device's overall applicability and making it suitable for most working environments. However, it lacks a good sealing structure, resulting in poor sealing performance and prone to leakage during the reaction process.

[0004] Therefore, in view of this, the shortcomings of the existing structure are studied and improved, and a chemical vapor deposition (CVD) reaction chamber is proposed. Utility Model Content

[0005] The purpose of the present invention is to provide a chemical vapor deposition (CVD) reaction chamber to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a chemical vapor deposition (CVD) reaction chamber, comprising a support platform and a sealing assembly, wherein a support frame is installed on the lower surface of the support platform, and a reaction chamber is installed on the upper surface of the support platform, the sealing assembly is arranged on the surface of the support platform, and the sealing assembly includes a lower connecting plate, a positioning hole, an annular sealing groove, a sealing ring, a sealing cover, an upper connecting plate, a positioning rod and a fixing ring, the lower connecting plate is arranged on both sides of the upper end of the reaction chamber, and a positioning hole is provided on the surface of the lower connecting plate, an annular sealing groove is provided on the upper surface of the reaction chamber, and a sealing ring is engaged and connected to the inner side of the annular sealing groove, a sealing cover is installed on the upper surface of the sealing ring, and upper connecting plates are provided on both sides of the lower end of the sealing cover.

[0007] Furthermore, a positioning rod is installed on the lower surface of the upper connecting plate, and the surface of the positioning rod is engaged with the inner side of the positioning hole, and the lower end of the positioning rod is engaged with a fixing ring.

[0008] Furthermore, an electric push rod is installed on the rear side of the upper surface of the support platform, and a supporting connecting piece is provided on the top of the electric push rod.

[0009] Furthermore, the lower surface of the front end of the supporting connector is connected to the upper surface of the sealing cover, and air intake connecting pipes are provided on both sides of the upper surface of the sealing cover.

[0010] Furthermore, an exhaust pipe is provided on the front side of the upper surface of the sealing cover body, and a sealing plug is snap-connected to the inner side of the upper end of the exhaust pipe.

[0011] Furthermore, the support platform and the support frame are an integrated structure, and a heating component for heating is provided on the surface of the support platform.

[0012] Furthermore, the heating component includes a heat dissipation vent, a mounting ring, a mounting bolt and a heat dissipation fan, and the heat dissipation vent is opened at the front end of the support platform surface, a mounting ring is installed on the front side of the lower surface of the support platform, and a mounting bolt is threadedly connected to the surface of the mounting ring, and a heat dissipation fan is provided on the upper surface of the mounting ring.

[0013] Furthermore, the heating assembly also includes a heating chamber and a heating coil, and a heating chamber is opened inside the lower end of the reaction chamber, and a heating coil is installed inside the heating chamber.

[0014] The utility model provides a chemical vapor deposition (CVD) reaction chamber, which has the following beneficial effects:

[0015] When the cam is in the closed position, the cam is in the closed position, and the cam is in the closed position, so that the cam is in the closed position and the cam is in the closed position.

[0016] 2. The utility model is provided with a heating component, which includes a heat dissipation vent, a mounting ring, a mounting bolt and a heat dissipation fan. The heating component also includes a heating chamber and a heating coil. When in use, the mounting ring is mounted on the lower surface of the support platform through the mounting bolt, thereby mounting the heat dissipation fan on the lower surface of the support platform. After the heating coil is energized, the temperature in the heating chamber rises, thereby continuously heating the reaction chamber. The heat dissipation fan is started to dissipate heat from the reaction chamber, and the heat of the reaction chamber is dissipated through the heat dissipation vent, so that the device can dissipate heat from the reaction chamber during the continuous heating process, thereby preventing the reaction chamber from being damaged due to excessive heat. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the three-dimensional structure of a chemical vapor deposition (CVD) reaction chamber of the present invention;

[0018] Figure 2 This is a schematic diagram of the three-dimensional structure of a sealing component of a chemical vapor deposition (CVD) reaction chamber of the present invention;

[0019] Figure 3 This is a schematic diagram of the three-dimensional structure of a heating component of a chemical vapor deposition (CVD) reaction chamber of the present invention.

[0020] In the figure: 1. support platform; 2. support frame; 3. reaction chamber; 4. sealing assembly; 401. lower connecting plate; 402. positioning hole; 403. annular sealing groove; 404. sealing ring; 405. sealing cover; 406. upper connecting plate; 407. positioning rod; 408. fixing ring; 5. electric push rod; 6. supporting connector; 7. air inlet connecting pipe; 8. exhaust pipe; 9. sealing plug; 10. heating assembly; 1001. heat dissipation vent; 1002. mounting ring; 1003. mounting bolt; 1004. heat dissipation fan; 1005. heating chamber; 1006. heating coil. DETAILED DESCRIPTION

[0021] The following embodiments of the present invention are described in further detail with reference to the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0022] like Figures 1 to 3As shown, a chemical vapor deposition (CVD) reaction chamber includes a support platform 1 and a sealing assembly 4. A support frame 2 is installed on the lower surface of the support platform 1, and a reaction chamber 3 is installed on the upper surface of the support platform 1. The sealing assembly 4 is arranged on the surface of the support platform 1, and the sealing assembly 4 includes a lower connecting plate 401, a positioning hole 402, an annular sealing groove 403, a sealing ring 404, a sealing cover 405, an upper connecting plate 406, a positioning rod 407 and a fixing ring 408. The lower connecting plate 401 is arranged on both sides of the upper end of the reaction chamber 3, and a positioning hole 402 is opened on the surface of the lower connecting plate 401, an annular sealing groove 403 is opened on the upper surface of the reaction chamber 3, and a sealing ring 404 is engaged and connected to the inner side of the annular sealing groove 403, a sealing cover 405 is installed on the upper surface of the sealing ring 404, and an upper connecting plate 406 is provided on both sides of the lower end of the sealing cover 405.

[0023] The specific operation is as follows. When in use, the electric push rod 5 drives the sealing cover 405 to move downward through the supporting connecting piece 6, so that the sealing cover 405 drives the positioning rod 407 to move downward through the upper connecting plate 406 until the positioning rod 407 is slidably connected with the inner side of the positioning hole 402, and the connection between the sealing cover 405 and the reaction chamber 3 is positioned, and the lower surface of the upper connecting plate 406 is fit with the upper surface of the lower connecting plate 401, and the reaction chamber 3 is sealed by the sealing cover 405. At the same time, the sealing ring 404 on the lower surface of the sealing cover 405 is engaged with the inner side of the annular sealing groove 403 on the upper surface of the reaction chamber 3 to further improve the overall sealing performance, and then the positioning rod 407 is reinforced by the engagement connection between the inner side of the fixing ring 408 and the lower end of the positioning rod 407.

[0024] Please refer to Figures 1 to 3, a positioning rod 407 is installed on the lower surface of the upper connecting plate 406, and the surface of the positioning rod 407 is engaged with the inner side of the positioning hole 402, and the lower end of the positioning rod 407 is engaged with a fixing ring 408, an electric push rod 5 is installed on the rear side of the upper surface of the support platform 1, and a support connecting member 6 is provided on the top of the electric push rod 5, the lower surface of the front end of the support connecting member 6 is connected to the upper surface of the sealing cover 405, and air intake connecting pipes 7 are provided on both sides of the upper surface of the sealing cover 405, an exhaust pipe 8 is provided on the front side of the upper surface of the sealing cover 405, and a sealing plug 9 is engaged with the inner side of the upper end of the exhaust pipe 8, the support platform 1 and the support frame 2 are an integrated structure, and the surface of the support platform 1 A heating assembly 10 for heating is provided, and the heating assembly 10 includes a heat dissipation vent 1001, a mounting ring 1002, a mounting bolt 1003 and a heat dissipation fan 1004, and the heat dissipation vent 1001 is opened at the front end of the surface of the support table 1, and a mounting ring 1002 is installed on the front side of the lower surface of the support table 1, and the mounting bolt 1003 is threadedly connected to the surface of the mounting ring 1002, and a heat dissipation fan 1004 is provided on the upper surface of the mounting ring 1002, the heating assembly 10 also includes a heating chamber 1005 and a heating coil 1006, and a heating chamber 1005 is opened on the inner side of the lower end of the reaction chamber 3, and a heating coil 1006 is installed inside the heating chamber 1005;

[0025] The specific operation is as follows. When in use, the electric push rod 5 is started, so that the electric push rod 5 drives the support connecting member 6 to rise and fall, and then drives the sealing cover body 405 to move up and down through the support connecting member 6, so as to realize the automatic opening and closing of the sealing cover body 405. The external pipeline is connected through the air inlet connecting pipe 7 and the reactants and carrier gas are introduced into the reaction chamber 3. During the reaction, the exhaust can be exhausted through the exhaust pipe 8, and the exhaust pipe 8 is sealed by the sealing plug 9. The mounting ring 1002 is mounted on the lower surface of the support platform 1 through the mounting bolt 1003, so that the heat dissipation fan 1004 is mounted on the lower surface of the support platform 1. After the heating coil 1006 is energized, the temperature in the heating chamber 1005 rises, thereby continuously heating the reaction chamber 3. The heat dissipation fan 1004 is started so that the heat dissipation fan 1004 dissipates heat to the reaction chamber 3, and the heat of the reaction chamber 3 is dissipated through the heat dissipation vent 1001.

[0026] In summary, if Figures 1 to 3As shown, when the chemical vapor deposition CVD reaction chamber is used, first, the electric push rod 5 is started, so that the electric push rod 5 drives the supporting connection member 6 to rise and fall, and then drives the sealing cover 405 to move up and down through the supporting connection member 6. Subsequently, the electric push rod 5 drives the sealing cover 405 to move downward through the supporting connection member 6, so that the sealing cover 405 drives the positioning rod 407 to move downward through the upper connecting plate 406 until the positioning rod 407 is slidably connected with the inner side of the positioning hole 402, positioning the connection between the sealing cover 405 and the reaction chamber 3, and making the lower surface of the upper connecting plate 406 fit with the upper surface of the lower connecting plate 401, and sealing the reaction chamber 3 through the sealing cover 405. At the same time, the sealing ring 404 on the lower surface of the sealing cover 405 is engaged with the inner side of the annular sealing groove 403 on the upper surface of the reaction chamber 3, and further In the first step, the overall sealing is improved, and the positioning rod 407 is reinforced by the engagement connection between the inner side of the fixing ring 408 and the lower end of the positioning rod 407, so as to realize the automatic opening and closing of the sealing cover 405, and the mounting ring 1002 is mounted on the lower surface of the support platform 1 through the mounting bolt 1003, so that the heat dissipation fan 1004 is mounted on the lower surface of the support platform 1. After the heating coil 1006 is energized, the temperature in the heating chamber 1005 rises, thereby continuously heating the reaction chamber 3. Subsequently, the external pipeline is connected through the air inlet connecting pipe 7, and the reactants and carrier gas are introduced into the reaction chamber 3. During the reaction process, the exhaust can be discharged through the exhaust pipe 8, and the exhaust pipe 8 is sealed by the sealing plug 9. At the same time, the heat dissipation fan 1004 is started to dissipate heat to the reaction chamber 3, and the heat of the reaction chamber 3 is dissipated through the heat dissipation vent 1001.

[0027] The embodiments of the present invention are provided for purposes of illustration and description and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations will be apparent to those skilled in the art. The embodiments are selected and described to better illustrate the principles and practical applications of the present invention and to enable those skilled in the art to understand the present invention and design various embodiments with various modifications suitable for specific applications.

Claims

1. A chemical vapor deposition (CVD) reaction chamber, comprising a support platform (1) and a sealing assembly (4), characterized in that: The support platform (1) is provided with a support frame (2) on its lower surface, and a reaction chamber (3) is provided on its upper surface. The sealing assembly (4) is provided on the surface of the support platform (1), and the sealing assembly (4) comprises a lower connecting plate (401), a positioning hole (402), an annular sealing groove (403), a sealing ring (404), a sealing cover (405), an upper connecting plate (406), a positioning rod (407) and a fixing ring (408). The connecting plates (401) are arranged on both sides of the upper end of the reaction chamber (3), and a positioning hole (402) is provided on the surface of the lower connecting plate (401). An annular sealing groove (403) is provided on the upper surface of the reaction chamber (3), and a sealing ring (404) is engaged and connected to the inner side of the annular sealing groove (403). A sealing cover (405) is installed on the upper surface of the sealing ring (404), and upper connecting plates (406) are provided on both sides of the lower end of the sealing cover (405).

2. The chemical vapor deposition (CVD) reaction chamber according to claim 1, characterized in that: A positioning rod (407) is installed on the lower surface of the upper connecting plate (406), and the surface of the positioning rod (407) is snap-connected with the inner side of the positioning hole (402), and the lower end of the positioning rod (407) is snap-connected with a fixing ring (408).

3. The chemical vapor deposition (CVD) reaction chamber according to claim 1, characterized in that: An electric push rod (5) is installed on the rear side of the upper surface of the support platform (1), and a supporting connecting piece (6) is provided on the top of the electric push rod (5).

4. The chemical vapor deposition (CVD) reaction chamber according to claim 3, characterized in that: The lower surface of the front end of the supporting connector (6) is connected to the upper surface of the sealing cover (405), and air intake connecting pipes (7) are provided on both sides of the upper surface of the sealing cover (405).

5. The chemical vapor deposition (CVD) reaction chamber according to claim 1, characterized in that: An exhaust pipe (8) is provided on the front side of the upper surface of the sealing cover (405), and a sealing plug (9) is snap-connected to the inner side of the upper end of the exhaust pipe (8).

6. The chemical vapor deposition (CVD) reaction chamber according to claim 1, characterized in that: The support platform (1) and the support frame (2) are an integrated structure, and a heating component (10) for heating is provided on the surface of the support platform (1).

7. The chemical vapor deposition (CVD) reaction chamber according to claim 6, characterized in that: The heating component (10) comprises a heat dissipation vent (1001), a mounting ring (1002), a mounting bolt (1003) and a heat dissipation fan (1004), wherein the heat dissipation vent (1001) is provided at the front end of the surface of the support platform (1), the mounting ring (1002) is installed on the front side of the lower surface of the support platform (1), and the mounting bolt (1003) is threadedly connected to the surface of the mounting ring (1002), and the heat dissipation fan (1004) is provided on the upper surface of the mounting ring (1002).

8. The chemical vapor deposition (CVD) reaction chamber according to claim 7, characterized in that: The heating assembly (10) further comprises a heating chamber (1005) and a heating coil (1006), and a heating chamber (1005) is provided on the inner side of the lower end of the reaction chamber (3), and a heating coil (1006) is installed on the inner side of the heating chamber (1005).

Citation Information

Patent Citations

  • Low-temperature low-pressure chemical vapor deposition reaction cavity

    CN213232483U