Wafer surface film preparation device

Abstract

The utility model provides a wafer surface film preparation device, and relates to the technical field of semiconductor manufacturing. A wafer surface film preparation device comprises a reaction cavity, a spray head, a heating disc and a neck bush. The heating disc is arranged in the reaction cavity and is used for bearing and heating a wafer; the spray head is arranged in the reaction cavity, is spaced from the heating disc and is used for spraying a chemical vapor phase precursor towards the heating disc; the inner bushing is arranged on the heating disc in a sleeving manner, an exhaust through hole is formed in the side wall of the inner bushing and used for exhausting residual gas after reaction, and the inner diameter of the inner bushing is larger than the outer diameter of the wafer, so that a distance is formed between the wafer and the exhaust through hole. The thickness uniformity of the film on the edge surface of the wafer can be improved, and the yield of the wafer is further improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a device for preparing a thin film on a wafer surface. Background Art

[0002] Wafers are silicon wafers used to make silicon semiconductor circuits. The starting material is silicon. High-purity polycrystalline silicon is dissolved, doped with silicon seed crystals, and then slowly pulled out to form cylindrical single crystals. Silicon ingots are then ground, polished, and sliced ​​to form silicon wafers, also known as wafers.

[0003] Atomic layer deposition (ALD) is a technology used to manufacture ultra-thin films. It deposits materials layer by layer on a substrate by alternately introducing different chemical vapor precursors onto the substrate surface, utilizing chemical reactions. However, existing ALD techniques, when depositing thin films on wafers, suffer from a problem where the dry pump causes the reactive gases to gather at the exhaust port. This results in thicker films near the exhaust port at the wafer edge, affecting the uniformity of the film thickness across the wafer surface and, in turn, the wafer's electrical properties. Utility Model Content

[0004] The present application mainly provides a wafer surface thin film preparation device to solve the problems of uneven thickness of the wafer edge surface film and low yield rate.

[0005] The technical solutions adopted by this application to solve the above technical problems are:

[0006] A device for preparing a thin film on the surface of a wafer comprises a reaction chamber, a nozzle, a heating plate, and an inner sleeve; the heating plate is arranged in the reaction chamber for carrying and heating the wafer; the nozzle is arranged in the reaction chamber and spaced apart from the heating plate for spraying a chemical vapor precursor toward the heating plate; the inner sleeve is sleeved on the heating plate, and an exhaust hole is provided on the side wall of the inner sleeve for discharging residual gas after the reaction, and the inner diameter of the inner sleeve is larger than the outer diameter of the wafer, so that a distance is formed between the wafer and the exhaust hole.

[0007] Optionally, an air guide channel is opened on the side wall of the inner sleeve along its axial direction, and the air guide channel includes a first curved wall, a bottom surface and a second curved wall connected in sequence, the first curved wall is the outer wall of the inner sleeve, the second curved wall is the inner wall of the inner sleeve, and the exhaust through hole is opened on the first curved wall and connected to the air guide channel.

[0008] Optionally, the inner sleeve is further provided with a wafer transfer port arranged opposite to the exhaust through hole, and the wafer is placed on the heating plate through the wafer transfer port.

[0009] Optionally, the distance between the wafer and the exhaust hole is 10mm-13mm.

[0010] Optionally, a buffer is embedded in the inner sleeve, the outer wall of the buffer is connected to the inner wall of the inner sleeve, and the inner wall of the buffer is attached to the outer wall of the wafer.

[0011] Optionally, the buffer member is detachably connected to the inner wall of the inner sleeve.

[0012] Optionally, a buckle is provided on the outer side wall of the buffer component, and a protrusion corresponding to the buckle is provided on the inner side wall of the inner sleeve.

[0013] Optionally, the buffer component and the inner sleeve are integrally formed.

[0014] Optionally, the buffer member is annular.

[0015] Optionally, the buffer member is arc-shaped.

[0016] The present application provides a device in which the inner diameter of the inner sleeve is designed to be larger than the outer diameter of the wafer, so that a certain distance is formed between the wafer and the exhaust hole, thereby avoiding the problem of reaction gas gathering at the exhaust port and causing uneven film thickness at the edge of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 This is a schematic diagram of the structure of the wafer surface thin film preparation device of this application;

[0019] Figure 2 This is a schematic diagram of the structure of the inner sleeve of this application;

[0020] Figure 3 This is a schematic diagram of the matching structure between the inner liner and the wafer in this application.

[0021] Icons: 100-reaction chamber; 200-nozzle; 300-heating plate; 400-inner sleeve; 410-exhaust hole; 420-gas guide channel; 430-film transfer port; 440-buffer; 500-wafer.

[0022] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0023] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0024] It should be noted that all directional indications in the embodiments of this application (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0025] In this application, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can mean fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0026] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0027] In existing atomic layer deposition technology, when depositing thin films on wafers, the reaction gases accumulate at the exhaust port due to the action of a dry pump. As a result, the deposited film is thicker near the exhaust port at the edge of the wafer, affecting the uniformity of the film thickness across the wafer surface and further affecting the electrical properties of the wafer. To address this issue, the embodiments of this application provide the following technical solutions to overcome it.

[0028] Please refer to Figures 1 to 3, an embodiment of the present application provides a device for preparing a thin film on the surface of a wafer 500, including a reaction chamber 100, a nozzle 200, a heating plate 300, and an inner sleeve 400; the heating plate 300 is arranged in the reaction chamber 100, for carrying and heating the wafer 500; the nozzle 200 is arranged in the reaction chamber 100, and is spaced apart from the heating plate 300, for spraying a chemical vapor precursor toward the heating plate 300; the inner sleeve 400 is sleeved on the heating plate 300, and an exhaust hole 410 is opened on the side wall of the inner sleeve 400 for discharging residual gas after the reaction, and the inner diameter of the inner sleeve 400 is larger than the outer diameter of the wafer 500, so that a distance is formed between the wafer 500 and the exhaust hole 410.

[0029] Specifically, the wafer 500 is placed on the heating plate 300, and the heating plate 300 is arranged in the reaction chamber 100. The nozzle 200 is also arranged in the reaction chamber 100 and is spaced apart from the heating plate 300. The nozzle 200 sprays chemical vapor precursors onto the wafer 500 on the heating plate 300. These precursors react chemically on the surface of the wafer 500 and are deposited layer by layer to form a thin film. The heating plate 300 heats the wafer 500. Heating is a key step in the atomic layer deposition process. It can promote the chemical reaction and improve the rate and quality of thin film deposition. The reaction chamber 100 is a space for thin film deposition reaction. It provides a closed environment so that the chemical vapor precursors can react chemically on the surface of the wafer 500 to form a thin film. The inner sleeve 400 is the core component of this device. It is sleeved on the heating plate 300 and has an exhaust through hole 410 on its side wall for discharging residual gas after the reaction. The inner diameter of the inner sleeve 400 is designed to be larger than the outer diameter of the wafer 500, so that a certain distance is formed between the wafer 500 and the exhaust hole 410, thereby avoiding the reaction gas gathering at the exhaust port, resulting in uneven film thickness at the edge of the wafer 500.

[0030] It should be noted that, through the design of the inner sleeve 400, the spacing formed between the wafer 500 and the exhaust through-hole 410 effectively avoids the gathering of the reaction gas at the exhaust port, thereby reducing the problem of uneven film thickness at the edge of the wafer 500. This uniform film deposition is crucial to improving the electrical performance of the wafer 500, because uneven film thickness can lead to inconsistent electrical performance, affecting the performance and reliability of the final product. Moreover, since the uniformity of the film is improved, the yield rate of the wafer 500 is also improved. The increase in yield rate means a reduction in production costs because the scrapping of wafers 500 due to uneven film thickness is reduced.

[0031] The present application provides a device for preparing a thin film on the surface of a wafer 500. The inner diameter of the inner sleeve 400 is designed to be larger than the outer diameter of the wafer 500, so that a certain distance is formed between the wafer 500 and the exhaust hole 410, thereby avoiding the reaction gas from gathering at the exhaust port, resulting in uneven film thickness at the edge of the wafer 500.

[0032] In an embodiment of the present application, an air guide channel 420 is opened on the side wall of the inner sleeve 400 along its axial direction, and the air guide channel 420 includes a first curved wall, a bottom surface and a second curved wall connected in sequence, the first curved wall is the outer wall of the inner sleeve 400, and the second curved wall is the inner wall of the inner sleeve 400, and the exhaust hole 410 is opened on the first curved wall and connected to the air guide channel 420.

[0033] Specifically, the gas channel design further optimizes the gas flow path. The gas channel 420 comprises a first curved wall, a bottom surface, and a second curved wall, which are connected in sequence. The first curved wall serves as the outer wall of the inner sleeve 400, while the second curved wall serves as the inner wall. Exhaust holes 410 are provided on the first curved wall and communicate with the gas channel 420. This design helps evenly distribute the reactant gases, reducing gas accumulation in localized areas, thereby improving film uniformity.

[0034] Furthermore, in the device for preparing a thin film on the surface of the wafer 500, a gas guide channel 420 is provided on the sidewall of the inner sleeve 400 along its axial direction. The channel includes a first curved wall, a bottom surface, and a second curved wall connected in sequence. This design allows the gas guide channel 420 to form a continuous channel from the outer wall to the inner wall of the inner sleeve 400, wherein the first curved wall is located on the outer side of the inner sleeve 400 and the second curved wall is located on the inner side. The exhaust hole 410 is provided on the first curved wall and communicates with the gas guide channel 420. The working principle of this structure is based on the principles of fluid mechanics. By precisely designing the shape and size of the gas guide channel 420, the path and speed of the reaction gas flow can be effectively controlled, thereby achieving uniform distribution of the gas in the deposition area on the surface of the wafer 500. This design of the gas guide channel 420 allows the reaction gas to flow more evenly through the space above the wafer 500 when flowing between the edge of the wafer 500 and the exhaust hole 410, reducing gas accumulation at the edge of the wafer 500 and thus making the film deposition process more uniform. In addition, the design of the gas guide channel 420 also helps to reduce the shear force generated by the gas on the surface of the wafer 500. This shear force may affect the thin film being deposited, resulting in a decrease in the quality of the film.

[0035] In an embodiment of the present application, the inner sleeve 400 is further provided with a wafer transfer port 430 arranged opposite to the exhaust through hole 410 , and the wafer 500 is placed on the heating plate 300 through the wafer transfer port 430 .

[0036] Specifically, the inner sleeve 400 is provided with a wafer transfer port 430, positioned opposite the exhaust hole 410. The wafer 500 is placed onto the heating plate 300 through the wafer transfer port 430. Furthermore, the design of the wafer transfer port 430 simplifies the wafer 500 placement process, making the operation more convenient and reducing the operator's workload. This simplified operation process helps improve the automation level of the production line, reduce human errors, and further enhance product consistency and reliability.

[0037] In the embodiment of the present application, the distance between the wafer 500 and the exhaust hole 410 is 10 mm-13 mm.

[0038] Specifically, to ensure that the reactant gases are evenly distributed across the surface of wafer 500 during the atomic layer deposition (ALD) process, thereby preventing the formation of an excessively thick deposited film near the edge of wafer 500 near the exhaust port, the spacing between wafer 500 and exhaust through-hole 410 is set to 10 mm to 13 mm based on the principles of fluid mechanics and gas dynamics. This optimizes the gas flow path and reduces localized gas accumulation, achieving more uniform gas distribution.

[0039] It should be noted that during the ALD process, a chemical vapor precursor is introduced into the reaction chamber 100 and undergoes a chemical reaction on the surface of the wafer 500, depositing layer by layer to form a thin film. If the exhaust hole 410 is not designed properly, the reaction gas may accumulate near the exhaust hole 410, causing the film deposition rate at the edge of the wafer 500 to accelerate, thereby causing the problem of uneven thickness. By setting an appropriate distance between the wafer 500 and the exhaust hole 410, this aggregation phenomenon can be reduced, making the gas flow more uniform on the surface of the wafer 500, thereby promoting uniform deposition of the thin film.

[0040] In an embodiment of the present application, a buffer member 440 is embedded in the inner sleeve 400 , an outer sidewall of the buffer member 440 is connected to an inner sidewall of the inner sleeve 400 , and an inner sidewall of the buffer member 440 is attached to an outer sidewall of the wafer 500 .

[0041] Specifically, the buffer 440 is provided on the inner sleeve 400 to protect the wafer 500. The outer wall of the buffer 440 is connected to the inner wall of the inner sleeve 400, and the inner wall is attached to the outer wall of the wafer 500. This design can reduce physical damage to the wafer 500 during the thin film deposition process and improve the integrity of the wafer 500. In addition, the buffer 440 can limit the wafer 500 to prevent the wafer 500 from shifting during the thin film deposition process, thereby avoiding the problem of uneven thin film deposition caused by the shift of the wafer 500. It should be noted that the provision of the buffer 440 provides additional protection for the wafer 500 and reduces the physical damage that may occur during the thin film deposition process. The integrity of the wafer 500 is crucial to the performance of the final product, because any slight damage may lead to a decrease in electrical performance or failure of the product.

[0042] In an embodiment of the present application, the buffer member 440 is detachably connected to the inner wall of the inner sleeve 400 .

[0043] Specifically, the removable connection between the buffer 440 and the inner sleeve 400 enhances the flexibility and adaptability of the device. This design allows the device to accommodate wafers 500 of varying sizes and shapes, improving its versatility and market competitiveness. It also facilitates replacement of the buffer 440. If the buffer 440 becomes damaged or the deposited film becomes too thick, the device only needs to be replaced during maintenance, greatly facilitating device overhaul.

[0044] In the embodiment of the present application, a buckle is provided on the outer side wall of the buffer member 440 , and a protrusion corresponding to the buckle is provided on the inner side wall of the inner sleeve 400 .

[0045] Specifically, a buckle is provided on the outer wall of the buffer 440, and a corresponding protrusion is provided on the inner wall of the inner sleeve 400, enabling a quick and stable connection, ensuring that the equipment remains stable during long-term operation. This stability and durability are very important for ensuring production continuity and reducing equipment maintenance costs.

[0046] In an embodiment of the present application, the buffer member 440 and the inner sleeve 400 are integrally formed.

[0047] Specifically, the inner sleeve 400 and the inner sleeve 400 can be integrally formed. This design simplifies the assembly process of the device, reduces the number of components, and improves overall stability and durability. The integrally formed design also helps to reduce the joints between components, thereby reducing the risk of gas leakage, ensuring the stability of the gas environment in the reaction chamber 100, and further promoting the uniformity of thin film deposition.

[0048] In the embodiment of the present application, the buffer member 440 is annular.

[0049] Specifically, the annular buffer 440 can not only protect and limit the wafer 500, but also cover the uncovered area of ​​the wafer 500 on the heating plate 300 to ensure that no film is generated on the surface of the heating plate 300 during the film deposition process.

[0050] In the embodiment of the present application, the buffer member 440 is arc-shaped.

[0051] Specifically, when the buffer member 440 is arc-shaped, a plurality of buffer members 440 may be provided and evenly nested on the inner sleeve 400 , thereby saving the material cost of the buffer member 440 .

[0052] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A wafer surface thin film preparation device, characterized in that: It includes a reaction chamber, a nozzle, a heating plate, and an inner sleeve; The heating plate is arranged in the reaction chamber and is used to carry and heat the wafer; The nozzle is disposed in the reaction chamber and spaced apart from the heating disk, and is used to spray a chemical vapor precursor toward the heating disk; The inner sleeve is mounted on the heating plate, and an exhaust hole is provided on the side wall of the inner sleeve for discharging residual gas after the reaction. The inner diameter of the inner sleeve is larger than the outer diameter of the wafer, so that a distance is formed between the wafer and the exhaust hole.

2. The wafer surface thin film preparation device according to claim 1, characterized in that: An air guide channel is provided on the side wall of the inner sleeve along its axial direction, and the air guide channel includes a first curved wall, a bottom surface and a second curved wall connected in sequence. The first curved wall is the outer wall of the inner sleeve, and the second curved wall is the inner wall of the inner sleeve. The exhaust through hole is provided on the first curved wall and is connected to the air guide channel.

3. The wafer surface thin film preparation device according to claim 2, characterized in that: The inner sleeve is also provided with a wafer transfer port which is arranged opposite to the exhaust through hole, and the wafer is placed on the heating plate through the wafer transfer port.

4. The wafer surface thin film preparation device according to claim 3, characterized in that: The distance between the wafer and the exhaust hole is 10mm-13mm.

5. The wafer surface thin film preparation device according to claim 4, characterized in that: A buffer is embedded in the inner sleeve, an outer side wall of the buffer is connected to an inner side wall of the inner sleeve, and an inner side wall of the buffer is attached to the outer side wall of the wafer.

6. The wafer surface thin film preparation device according to claim 5, characterized in that: The buffer member is detachably connected to the inner wall of the inner sleeve.

7. The wafer surface thin film forming device according to claim 6, characterized in that: A buckle is provided on the outer side wall of the buffer component, and a protrusion corresponding to the buckle is provided on the inner side wall of the inner sleeve.

8. The wafer surface thin film forming device according to claim 5, characterized in that: The buffer component and the inner sleeve are integrally formed.

9. The wafer surface thin film forming device according to any one of claims 5 to 8, characterized in that: The buffer is annular.

10. The wafer surface thin film forming device according to any one of claims 5 to 8, characterized in that: The buffer is arc-shaped.

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