Micro-packaged ultra-wideband SIP frequency source device

Abstract

The utility model relates to a micro-packaging ultra wide band SIP frequency source device, comprising an HTCC substrate and a frequency source circuit arranged on the HTCC substrate, the HTCC substrate module is provided with a radio frequency reference signal input terminal, a microwave radio frequency signal output terminal and an enabling control DC bias voltage input terminal; the frequency source circuit comprises a microwave circuit unit and a power supply control circuit unit; the microwave circuit unit comprises a phase-locked circuit, a VCO circuit, a loop circuit and an amplifying circuit, and the phase-locked circuit is connected with the VCO circuit and the amplifying circuit in sequence; the power supply control circuit unit comprises a power supply voltage stabilization filter circuit; the power supply voltage stabilization filter circuit is respectively connected with an enabling control direct current bias voltage input terminal, a phase lock circuit, a VCO circuit and an amplifying circuit; the utility model has the advantages of high integration, small size, excellent performance, convenient installation, high reliability and the like.

Description

Technical Field

[0001] The utility model relates to the technical field of microwave communications, in particular to a micro-packaged ultra-wideband SIP frequency source device. Background Art

[0002] With the advancement of semiconductor and digital communication technologies, a variety of wireless communication technologies have emerged in recent years. Among these new technologies, UWB (ultra-wideband) offers significant advantages for high-speed data transmission over short distances. As a key component of UWB wireless transmitters, research on ultra-wideband frequency source components has garnered significant attention. Utility Model Content

[0003] The purpose of the utility model is to provide an ultra-wideband frequency source device which has the advantages of adopting HTCC micro-packaging, ultra-wideband, stability and reliability.

[0004] In order to solve the problems existing in the background technology, the utility model relates to a micro-packaged ultra-wideband SIP frequency source device, which is composed of a HTCC substrate + a surrounding frame + a cover plate. The HTCC substrate module is provided with a radio frequency reference signal input terminal, a microwave radio frequency signal output terminal and an enable control DC bias voltage input terminal; the frequency source circuit includes a microwave circuit unit and a power control circuit unit; the microwave circuit unit includes a phase-locked circuit, a VCO circuit and an amplifier circuit, and the phase-locked circuit is connected to the VCO circuit and the amplifier circuit in sequence, and the frequency range covers one octave; the power control circuit unit includes a power supply voltage stabilization filter circuit, and the power supply voltage stabilization filter circuit is respectively connected to the enable control DC bias voltage input terminal, the phase-locked circuit, the VCO circuit and the amplifier circuit. The utility model has the advantages of high integration, extremely small size, excellent performance, easy installation, and high reliability.

[0005] As a further improvement of the present invention, the micro-package SIP is extremely small, with the device size being only 11mm*11mm in length and width.

[0006] As a further improvement of the present invention; the built-in MCU and loop filter circuit.

[0007] As a further improvement of the present invention, the substrate is made of HTCC, and the frame and cover are made of Kovar surface plating.

[0008] As a further improvement of the present invention, the RF reference signal input terminal, the microwave RF signal output terminal and the enable control DC bias voltage input terminal are all in the form of Pads.

[0009] As a further improvement of the present invention, the power control circuit unit adopts a power supply voltage stabilizing filter circuit, which is respectively connected to the enable control DC bias voltage input terminal and the phase-locked circuit, VCO circuit and amplifier circuit.

[0010] After adopting the above technical solution, the utility model has the following beneficial effects:

[0011] 1. Using micro packaging technology, the device is extremely small;

[0012] 2. Using SIP technology, the product has complete functions while the device is extremely small;

[0013] 3. QFN packaging, easy to assemble and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 A schematic diagram of the external structure of an embodiment provided by the utility model;

[0016] Figure 2 A circuit diagram of an embodiment provided by the utility model;

[0017] Reference numerals:

[0018] P—phase-locked circuit module; V—VCO circuit module; A—amplifier circuit module; C—power control circuit unit. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0020] See also Figure 1-Figure 2This specific embodiment adopts the following technical solution: a micro-packaged ultra-wideband SIP frequency source device, consisting of a HTCC substrate, a frame, and a cover plate, wherein the frame and cover plate are made of Kovar material; the HTCC substrate unit includes a phase-locked circuit P, a VCO circuit V, a loop circuit L, an amplifier circuit A, a power control circuit C, and an enable control DC bias voltage input terminal DC IN, wherein the phase-locked circuit, the VCO circuit unit, and the amplifier circuit are sequentially connected; the enable control DC bias voltage input terminal is connected to the phase-locked circuit, the VCO circuit, and the amplifier circuit via the power control circuit unit; the power control circuit unit C uses a power supply voltage stabilization filter circuit, which is respectively connected to the enable control DC bias voltage input terminal DC IN, the phase-locked circuit P, the VCO circuit V, and the amplifier circuit A.

[0021] The phase-locked loop chip of the phase-locked circuit is a wide-band high FOM chip.

[0022] The VCO chip of the VCO circuit is a wide-band chip, and the frequency range covers one octave.

[0023] The amplifier chip of the amplifier circuit A is a high-gain, low-noise chip.

[0024] The enable control DC bias voltage input terminal DC IN is integrated on the HTCC substrate. The signal inputted by the enable control DC bias voltage input terminal DC IN is processed by the power conversion filter circuit in the power control circuit unit C and then directly provides a DC bias voltage to the phase-locked circuit P, VCO circuit V and amplifier circuit A.

[0025] The microwave radio frequency reference signal input terminal and the microwave radio frequency signal output terminal are both integrated on the HTCC substrate in the form of a pad.

[0026] The micro-package ultra-wideband SIP frequency source device circuit consists of a phase-locked loop circuit P, a VCO circuit module V, a loop filter L and an amplifier circuit module A. The radio frequency reference signal is input into the phase-locked loop circuit P and generates a microwave radio frequency signal through the VCO circuit V.

[0027] When the present invention is in operation, a DC supply voltage signal is input (DC IN) to the enable control DC bias voltage input terminal DC IN, and the power supply voltage stabilization and filtering circuit includes an LDO voltage regulator and an LC filtering circuit. The LDO voltage regulator uses DC+3.3V and outputs it to the DC supply input terminal of the phase-locked circuit P; the LC filtering circuit uses DC+5V and outputs it to the DC supply input terminal of the VCO circuit V and the DC supply input terminal of the amplifier circuit A, thereby providing power. A 100M radio frequency reference signal is input through the radio frequency reference signal input terminal (RF IN) and then passes through the VCO circuit module V and the amplifier circuit module A in sequence, outputting a 10-20GHz signal (RFOUT).

[0028] Practice has proven that the broadband frequency source component of this embodiment can achieve the following technical indicators:

[0029] (1) Working temperature: -40℃~+60℃;

[0030] (2) Storage temperature: -55℃~+70℃;

[0031] (3) Input reference frequency: 100MHz;

[0032] (4) Input reference power: 0dBm;

[0033] (5) Output RF frequency: 10~20GHz;

[0034] (6) Frequency step: 5MHz; (customizable);

[0035] (7) Frequency hopping time: ≤100us;

[0036] (6) Output RF power: 16±2dBm;

[0037] (7) RF output clutter suppression: ≥65dBc.

[0038] The utility model has the advantages of high integration, extremely small size, excellent performance, easy installation, high reliability, etc.

[0039] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations that come within the meaning and range of equivalents of the claims be embraced within the present invention.

[0040] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A micro-packaged ultra-wideband SIP frequency source device, characterized in that: The invention comprises an HTCC substrate and a frequency source circuit arranged on the HTCC substrate. The HTCC substrate module is provided with a radio frequency reference signal input terminal, a microwave radio frequency signal output terminal, and an enable control DC bias voltage input terminal. The frequency source circuit comprises a microwave circuit unit and a power control circuit unit. The microwave circuit unit comprises a phase-locked circuit, a loop filter circuit, a VCO circuit, and an amplifier circuit, wherein the phase-locked circuit is sequentially connected to the VCO circuit and the amplifier circuit. The power control circuit unit comprises a power supply voltage stabilizing filter circuit, which is respectively connected to the enable control DC bias voltage input terminal, the phase-locked circuit, the VCO circuit, and the amplifier circuit.

2. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: Micro-encapsulation, very small size.

3. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: It is realized by using SIP system-level packaging technology.

4. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: It consists of HTCC substrate + frame + cover.

5. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: The frequency range covers one octave.

6. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: The product has built-in MCU and loop filter circuit.

7. The micro-packaged ultra-wideband SIP frequency source device according to claim 1, characterized in that: The power control circuit unit adopts a power conversion filter circuit, which is respectively connected to the enable control DC bias voltage input terminal, the phase-locked circuit, the VCO circuit and the amplifier circuit.

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