Top structure of etching chamber of dry etching machine

Abstract

The utility model provides a top structure of an etching chamber of a dry etching machine. The top structure comprises a partition plate; the upper cavity assembly is arranged at the central opening of the partition plate; the cooling disc is arranged at the bottom of the upper cavity assembly; the upper electrode is arranged at the bottom of the cooling disc; the upper cavity isolating ring is arranged between the partition plate and the upper cavity assembly; the cooling disc isolating ring is arranged among the partition plate, the cooling disc and the upper electrode; the L-shaped hook is arranged at the bottom of the partition close to the edge of the central opening of the partition, and the front end of the platform area of the L-shaped hook faces the central position of the central opening of the partition; and the upper shielding ring is arranged between the L-shaped hook and the cooling disc isolating ring. Therefore, the contact between the upper shielding ring and the upper cavity of the etching machine is tighter, the risk that particulate matters enter is reduced, and the product yield in the etching process is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a top structure of an etching chamber of a dry etcher. Background Art

[0002] Dry etching is a thin film etching technique using plasma. When gases exist in the form of plasma, they exhibit two characteristics: first, the chemical activity of the gases in the plasma is much stronger than under normal conditions. Choosing the right gas, depending on the material being etched, allows for a faster reaction with the material, achieving the desired removal. Second, an electric field can be used to guide and accelerate the plasma, giving it a certain amount of energy. When the plasma strikes the surface of the material being etched, it knocks out atoms from the material, achieving the desired etching effect through physical energy transfer.

[0003] The dry etching process is carried out in the etching chamber (i.e., the lower cavity) of the etcher. This process produces reaction products. The upper shield ring (Top shield ring) set on the top of the etching chamber is used to block the reaction products for the upper cavity of the etcher (used to generate the plasma gas source for etching). The existing machine design results in the upper shield ring being installed not tightly enough, which can easily cause contamination of the upper cavity and affect product yield. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of this application is to provide a top structure of the etching chamber of a dry etcher, which is used to solve the problem in the prior art that the upper shielding ring is not installed tightly enough, causing contamination of the upper cavity of the dry etcher.

[0005] To achieve the above-mentioned purpose and other related purposes, the present application provides a top structure of an etching chamber of a dry etcher, comprising: a partition; an upper chamber assembly, arranged at the central opening of the partition; a cooling plate, arranged at the bottom of the upper chamber assembly; an upper electrode, arranged at the bottom of the cooling plate; an upper chamber isolation ring, arranged between the partition and the upper chamber assembly; a cooling plate isolation ring, arranged between the partition and the cooling plate and the upper electrode; an L-shaped hook, arranged at the edge of the bottom of the partition near the central opening of the partition, with the front end of the platform area of ​​the L-shaped hook facing the center of the central opening of the partition; and an upper shielding ring, arranged between the L-shaped hook and the cooling plate isolation ring.

[0006] Preferably, the central opening of the partition is circular.

[0007] Preferably, an L-shaped hook is provided at each of the three equal parts of the circular central opening of the partition.

[0008] Preferably, the L-shaped hook is fixed to the edge of the bottom of the partition close to the central opening of the partition by bolts.

[0009] Preferably, the upper shielding ring is in an I-shape, the upper part of the upper shielding ring is parallel to the lower part and perpendicular to the middle part, one end of the upper part is connected to the top end of the middle part, one end of the lower part is connected to the bottom end of the middle part, and the other end of the upper part and the other end of the lower part extend in opposite directions.

[0010] Preferably, the upper portion of the upper shielding ring is located between the upper cavity isolation ring and the L-shaped hook.

[0011] Preferably, an elastic sealing ring is provided between the upper part of the upper shielding ring and the upper cavity isolation ring, and the vertical distance between the platform area surface of the L-shaped hook and the bottom surface of the upper cavity isolation ring is not greater than the sum of the thickness of the upper part of the upper shielding ring and the maximum thickness of the elastic sealing ring.

[0012] Preferably, the lower portion of the upper shielding ring is buckled onto the bottom of the cooling plate isolation ring.

[0013] As described above, the top structure of the etching chamber of the dry etcher provided in this application has the following beneficial effects: it makes the upper shielding ring in closer contact with the upper cavity of the etcher, reduces the risk of particle entry, and improves the product yield of the etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0015] Figure 1 A schematic cross-sectional view of the top structure of the etching chamber of the dry etcher provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0016] The following describes the embodiments of the present application through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present application from the disclosure herein. The present application may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0017] The following is a clear and complete description of the technical solutions in this application in conjunction with the accompanying drawings. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this application.

[0018] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating positions or location relationships, are used solely to facilitate the description of this application and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal connections between two components; they can refer to wireless connections or wired connections. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0020] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0021] See also Figure 1 , which shows a schematic cross-sectional structure diagram of the top structure of the etching chamber of the dry etcher provided in an embodiment of the present application.

[0022] like Figure 1 As shown, the top structure of the etching chamber 100 of the dry etcher includes: a partition 108; an upper chamber assembly 107, which is arranged at the central opening of the partition 108; a cooling plate 106, which is arranged at the bottom of the upper chamber assembly 107; an upper electrode 105, which is arranged at the bottom of the cooling plate 106; an upper chamber isolation ring 103, which is arranged between the partition 108 and the upper chamber assembly 107; a cooling plate isolation ring 102, which is arranged between the partition 108 and the cooling plate 106 and the upper electrode 105; an L-shaped hook 110, which is arranged at the bottom of the partition 108 near the edge of the central opening of the partition 108, with the front end of the platform area of ​​the hook 110 facing the center of the central opening of the partition 108; and an upper shielding ring 101, which is arranged between the hook 110 and the cooling plate isolation ring 102.

[0023] Illustratively, the central opening of the partition 108 is circular.

[0024] Exemplarily, a hook 110 is provided at each of the three equal parts of the circular central opening of the partition 108. The hook 110 is fixed to the bottom of the partition 108 near the edge of the central opening of the partition 108 by means of bolts or other components.

[0025] Exemplarily, the upper shielding ring 101 is in an I-shape, that is, the upper shielding ring 101 consists of three parts: upper, middle and lower parts, wherein the upper part is parallel to the lower part and perpendicular to the middle part, one end of the upper part is connected to the top end of the middle part, one end of the lower part is connected to the bottom end of the middle part, and the other end of the upper part and the other end of the lower part extend in opposite directions.

[0026] Exemplarily, the upper part of the upper shielding ring 101 is located between the upper cavity isolation ring 103 and the L-shaped hook 110, and an elastic sealing ring is provided between the upper part of the upper shielding ring 101 and the upper cavity isolation ring 103, and the vertical distance between the platform area surface of the L-shaped hook 110 and the bottom surface of the upper cavity isolation ring 103 is not greater than the sum of the thickness of the upper part of the upper shielding ring 101 and the maximum thickness of the elastic sealing ring.

[0027] Exemplarily, the lower portion of the upper shielding ring 101 is buckled onto the bottom of the cooling plate isolation ring 102 .

[0028] Exemplarily, the upper cavity isolation ring 103 is stepped.

[0029] An electrostatic chuck and a lifting and supporting device for the electrostatic chuck are provided at the lower portion of the etching chamber 100 of the dry etcher, which are not shown in the figure for simplicity.

[0030] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present application. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0031] In summary, the top structure of the dry etcher chamber provided in this application ensures closer contact between the upper shield ring and the upper chamber of the etcher, reducing the risk of particle intrusion and improving the product yield of the etching process. Therefore, this application effectively overcomes the various shortcomings of the existing technology and has high industrial application value.

[0032] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical concepts disclosed herein shall be covered by the claims of this application.

Claims

1. A top structure of an etching chamber of a dry etching machine, characterized in that: The top structure of the etching chamber of the dry etcher includes: partition (108); An upper cavity assembly (107) is disposed at the central opening of the partition (108); A cooling plate (106) is arranged at the bottom of the upper cavity assembly (107); an upper electrode (105) disposed at the bottom of the cooling plate (106); an upper cavity isolation ring (103) disposed between the partition plate (108) and the upper cavity assembly (107); A cooling disk isolation ring (102) is disposed between the partition (108), the cooling disk (106), and the upper electrode (105); An L-shaped hook (110) is provided at an edge of the bottom of the partition (108) close to the central opening of the partition (108), with the front end of the platform area of ​​the L-shaped hook (110) facing the center of the central opening of the partition (108); and An upper shielding ring (101) is arranged between the L-shaped hook (110) and the cooling plate isolation ring (102).

2. The top structure of the etching chamber of the dry etcher according to claim 1, characterized in that: The central opening of the partition (108) is circular.

3. The top structure of the etching chamber of the dry etcher according to claim 2, characterized in that: An L-shaped hook (110) is provided at each of the three equal parts of the circular central opening of the partition (108).

4. The top structure of the etching chamber of the dry etcher according to claim 1 or 3, characterized in that: The L-shaped hook (110) is fixed to the edge of the bottom of the partition (108) close to the central opening of the partition (108) by means of bolts.

5. The top structure of the etching chamber of the dry etcher according to claim 1, characterized in that: The upper shielding ring (101) is in an I-shaped configuration, the upper portion of the upper shielding ring (101) is parallel to the lower portion and perpendicular to the middle portion, one end of the upper portion is connected to the top end of the middle portion, one end of the lower portion is connected to the bottom end of the middle portion, and the other end of the upper portion and the other end of the lower portion extend in opposite directions.

6. The top structure of the etching chamber of the dry etcher according to claim 5, characterized in that: The upper portion of the upper shielding ring (101) is located between the upper cavity isolation ring (103) and the L-shaped hook (110).

7. The top structure of the etching chamber of the dry etcher according to claim 5, characterized in that: An elastic sealing ring is provided between the upper portion of the upper shielding ring (101) and the upper cavity isolation ring (103), and a vertical distance between the platform area surface of the L-shaped hook (110) and the bottom surface of the upper cavity isolation ring (103) is not greater than the sum of the thickness of the upper portion of the upper shielding ring (101) and the maximum thickness of the elastic sealing ring.

8. The top structure of the etching chamber of the dry etcher according to claim 1, characterized in that: The lower portion of the upper shielding ring (101) is buckled onto the bottom of the cooling plate isolation ring (102).

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