Semiconductor device and air conditioner

By using an insulated heat sink and heat sink respectively in the IGBT semiconductor device of the air conditioner, combined with the heat sink and heat conduction medium made of metal materials, the problems of poor heat dissipation effect and weak current pass-through ability are solved, and the heat dissipation performance and improved current pass-through ability are achieved, and the use requirements of high-power devices are met.

CN223296804UActive Publication Date: 2025-09-02FOSHAN SHUNDE MIDEA ELECTRONICS TECH CO LTD +1
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Patent Information

Application Number
CN202422559302.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-10-22
Publication Date
2025-09-02
Estimated Expiration
2034-10-22

AI Technical Summary

Technical Problem

The existing air conditioner IGBT semiconductor devices adopt a fully plastic-sealed insulating structure design, resulting in poor heat dissipation effect, weak current throughput and high thermal resistance, making it difficult to meet the requirements of high-power devices.

Method used

The design of insulated heat conductor fins and heat sinks is respectively arranged, combining heat sinks made of metal materials and insulated heat conduction medium to optimize heat conduction performance and improve the current throughput without increasing the device size.

Benefits of technology

It effectively optimizes the heat dissipation performance, reduces thermal resistance, improves the current throughput, ensures the stability and safety of the device, and meets the requirements of high-power devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a semiconductor device and an air conditioner, and relates to the technical field of electronic devices, and the semiconductor device comprises a packaging body, and a chip assembly, a cooling fin and an insulating heat-conducting fin which are packaged in the packaging body; and the insulating heat-conducting sheet is arranged between the cooling fin and the chip assembly, and is attached to the cooling fin and the chip assembly respectively. The heat dissipation device is used for dissipating heat of a chip assembly in time, reducing the thermal resistance from the chip assembly to a cooling fin, effectively optimizing the heat dissipation performance, improving the current passing capacity and reducing the thermal resistance.
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Description

Technical Field

[0001] The utility model relates to the technical field of electronic devices, in particular to a semiconductor device and an air conditioner. Background Art

[0002] At present, most of the existing semiconductor devices such as IGBT semiconductor devices in air conditioners adopt a fully plastic-encapsulated insulation structure design with plastic packaging materials as heat sinks. This design will lead to the device having shortcomings such as poor heat dissipation effect, weak current flow capacity, high thermal resistance from wafer to heat sink, and difficulty in passing higher current through the wafer. As a result, the device can only be used in low-power models.

[0003] Based on this, a new design needs to be proposed to remove the heat of the device in time and improve the current carrying capacity. Utility Model Content

[0004] The main purpose of the utility model is to provide a semiconductor device and an air conditioner, aiming to solve the problem of poor heat dissipation, improve the current carrying capacity, reduce thermal resistance, and meet the requirements for the use of high-power devices.

[0005] To achieve the above-mentioned object, the present invention provides a semiconductor device comprising a package body and a chip assembly, a heat sink and an insulating heat conductive sheet encapsulated in the package body;

[0006] The insulating heat-conducting sheet is arranged between the heat sink and the chip component, and is respectively arranged in contact with the heat sink and the chip component.

[0007] In one embodiment, the insulating heat-conducting sheet includes any one of a copper-clad ceramic sheet, an insulating ceramic sheet, a silicone gasket, and a nylon gasket, or a combination of multiple thereof.

[0008] In one embodiment, a metal heat-conducting medium or a non-metal heat-conducting medium is provided between the insulating heat-conducting sheet and the heat sink.

[0009] In one embodiment, the heat sink includes any one of a copper heat sink, an aluminum heat sink, a copper-clad aluminum heat sink, and a steel heat sink.

[0010] In one embodiment, the chip assembly includes a substrate and a chip body, the substrate has a first side and a second side opposite to each other, the chip body is arranged on the first side of the substrate, and the second side of the substrate is arranged in contact with the insulating thermal conductive sheet.

[0011] In one embodiment, the chip assembly further includes pins, the pins are connected to the chip assembly, and at least a portion of the pins extends out of the package.

[0012] In one embodiment, the pins include:

[0013] a first pin, wherein a first end of the first pin is disposed on the substrate, and a second end of the first pin extends out of the package;

[0014] A second pin, wherein a first end of the second pin is connected to the chip body through a binding wire, and a second end of the second pin extends out of the package body.

[0015] In one embodiment, the semiconductor device is any one of an IGBT semiconductor device, a MOS tube, a diode, and a GAN.

[0016] The utility model also provides an air conditioner, comprising the semiconductor device as described above.

[0017] In one embodiment, the air conditioner is a variable frequency air conditioner.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] The technical solution of the present invention adopts a packaging body and a chip component encapsulated in the packaging body, a heat sink and an insulating thermal conductive sheet. The insulating thermal conductive sheet is respectively arranged in contact with the heat sink and the chip component, which can increase the heat conduction surface and optimize the heat conduction performance, so as to dissipate the heat of the chip component in time and reduce the thermal resistance from the chip component to the heat sink, effectively optimize the heat dissipation performance, improve the current carrying capacity and reduce the thermal resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0021] Figure 1 A schematic structural diagram of an embodiment of a semiconductor device provided by the present invention;

[0022] Figure 2 This is a packaging diagram of a semiconductor device according to an embodiment of the present invention.

[0023] Description of Figure Numbers:

[0024] 100. Encapsulation body;

[0025] 200, chip assembly; 210, substrate; 220, chip body; 231, first pin; 232, second pin; 233, bonding wire;

[0026] 300, heat sink;

[0027] 400. Insulating thermal conductive sheet.

[0028] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0030] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0031] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0032] Based on the fact that most existing IGBT semiconductor devices and other semiconductor devices adopt a fully plastic-encapsulated insulation structure design, which leads to poor heat dissipation effect, weak current flow capacity, high thermal resistance and other problems, the present application provides a semiconductor device and air conditioner. Through the design of the heat sink 300 and the insulating thermal conductive sheet 400, while ensuring a miniaturized design, the heat dissipation effect is optimized, the wafer current flow capacity is improved, and the thermal resistance is reduced to meet the requirements for the use of high-power devices. It is used to ensure that the heat dissipation performance, current flow capacity and thermal resistance of the device itself meet the application requirements when the semiconductor device is used in air conditioners, especially variable-frequency air conditioners and other devices with higher requirements for power devices.

[0033] Reference Figure 1 、 Figure 2The semiconductor device includes a package body 100, a chip assembly 200, a heat sink 300, and an insulating thermal conductive sheet 400 encapsulated in the package body 100. The insulating thermal conductive sheet 400 is disposed between the heat sink 300 and the chip assembly 200, and is disposed in contact with the heat sink 300 and the chip assembly 200, respectively.

[0034] The insulating thermally conductive sheet 400 is used to achieve isolation and insulation. It is disposed between the heat sink 300 and the chip assembly 200, and is placed in contact with both the heat sink 300 and the chip assembly 200. The insulating thermally conductive sheet 400, placed in contact with both the heat sink 300 and the chip assembly 200, increases the heat transfer surface and optimizes thermal conductivity, allowing heat from the chip assembly 200 to be dissipated promptly while reducing the thermal resistance from the chip assembly 200 to the heat sink 300. This effectively optimizes heat dissipation, increases current flow capacity, and reduces thermal resistance.

[0035] In order to solve the problems of poor heat dissipation, high thermal resistance, and poor wafer flow capacity caused by the use of plastic packaging materials as heat sinks in existing semiconductor devices, the present invention optimizes the heat dissipation effect, reduces thermal resistance, and improves the current flow capacity by improving the heat sink material and the semiconductor device packaging structure. Specifically, in the technical solution of the present invention, the heat sink 300 is made of metal material, and the heat sink 300 includes any one of a copper heat sink 300, an aluminum heat sink 300, a copper-clad aluminum heat sink 300, and a steel heat sink 300, or a plurality of other materials, to form a metal heat sink. The design of the metal heat sink can significantly improve the heat dissipation performance of the semiconductor device and optimize the heat dissipation effect. The heat sink 300 can optimize the thermal conductivity to quickly conduct the heat generated by the semiconductor device, reduce the operating temperature of the device, and avoid heat accumulation. The heat sink 300 made of metal material can also improve the strength, ensure the stability of the semiconductor device structure, and facilitate processing and installation.

[0036] To improve the high current carrying capacity of existing semiconductor devices, the wafer size generally needs to be increased, which not only increases the size of the semiconductor device but also increases the processing cost. To achieve a miniaturized design while improving current carrying capacity, the present invention uses a heat sink 300 made of a metal material and disposes an insulating thermal conductive sheet 400 between the heat sink 300 and the chip assembly 200. The insulating thermal conductive sheet 400 is made of a material that can be used to isolate strong current. The insulating thermal conductive sheet 400 is disposed between the chip assembly 200 and the heat sink 300 made of a metal material. One side of the insulating thermal conductive sheet 400 is disposed in contact with the chip assembly 200, and the other side of the insulating thermal conductive sheet 400 is disposed in contact with the heat sink 300. This provides insulation and heat conduction, preventing short circuits caused by direct contact between the heat sink 300 and the chip assembly 200, as well as damage to the device due to high current. This is used to optimize the electrical safety of semiconductor devices and air conditioners, ensure the safe operation of electrical equipment, prevent damage to the chip assembly 200 due to overheating during operation, and effectively ensure the stability and safety of the semiconductor device. The heat dissipation capacity is optimized by using an insulating heat conductive sheet 400 made of a material with good electrical conductivity, which is used to avoid electrical failures while improving heat dissipation efficiency. It is used to increase the large current flow capacity without increasing the size, meeting the design requirements of miniaturization, high heat dissipation performance, high current flow capacity, and low resistance.

[0037] Specifically, in the technical solution of the present invention, in one embodiment, the insulating thermally conductive sheet 400 includes any one of a copper-clad ceramic sheet, an insulating ceramic sheet, a silicone gasket, and a nylon gasket, or a combination thereof. The specific insulating thermally conductive sheet 400 to be used can be determined based on actual needs and is not limited here.

[0038] To reduce production costs, reduce weight, and optimize processing performance, package 100 may be, but is not limited to, a packaging structure made of resin or other materials. This allows the wafer of a semiconductor device, such as an IGBT semiconductor device, to be encapsulated by an insulating material, thereby insulating the semiconductor device from the outside. The specific material used for package 100 can be selected based on actual needs and is not limited herein.

[0039] In one embodiment, a heat conducting medium is provided between the insulating heat conducting sheet 400 and the heat sink 300 . Specifically, a metal heat conducting medium or a non-metal heat conducting medium is provided between the insulating heat conducting sheet 400 and the heat sink 300 .

[0040] A thermally conductive medium is provided between the insulating thermally conductive sheet 400 and the heat sink 300. Optionally, the heat sink 300 is connected to the insulating thermally conductive sheet 400 via the thermally conductive medium coated on the insulating thermally conductive sheet 400. The provision of the thermally conductive medium can be used to increase the contact area between the insulating thermally conductive sheet 400 and the heat sink 300, enhance the connection strength between the two, and avoid increased thermal resistance due to poor contact or unstable connection, effectively improving thermal conductivity and reducing thermal resistance.

[0041] In some optional embodiments of the present invention, the metal thermal conductive medium can be but not limited to copper, aluminum or other metal thermal conductive media with good thermal conductivity; the non-metallic thermal conductive medium can be but not limited to silicone grease, silica gel, graphite, etc.; the specific settings can be based on actual conditions and are not limited here.

[0042] In some other optional embodiments of the present invention, mounting locations may be provided on the heat sink 300 to facilitate mounting the semiconductor power device on an air conditioner radiator or other device. Optionally, a portion of the heat sink 300 extends outside the package 100, and the mounting location is provided on the portion of the heat sink 300 that extends outside the package 100. The mounting location may be, but is not limited to, a connection hole such as a screw hole, and is not limited thereto.

[0043] In one embodiment, the chip assembly 200 includes a substrate 210 and a chip body 220, the substrate 210 has a first side and a second side relative to each other, the chip body 220 is arranged on the first side of the substrate 210, and the second side of the substrate 210 is arranged in contact with the insulating thermal conductive sheet 400.

[0044] As will be appreciated, package 100 is provided with a lead frame, which includes a wafer carrier area for accommodating chip assembly 200, specifically, chip body 220 and substrate 210. Chip body 220 is disposed on a first side of substrate 210, and a second side of substrate 210 is disposed in contact with insulating thermal conductive sheet 400. Specifically, soldering points or other connection points may be provided on substrate 210 to connect chip body 220, thereby simplifying circuit layout and reducing the difficulty of production and assembly.

[0045] Optionally, the heat sink 300 includes a first connecting portion and a second connecting portion that are integrally connected. The first connecting portion of the heat sink 300 is encapsulated within the package body 100, and the second connecting portion of the heat sink 300 extends outside the package body 100. When the heat sink 300 is provided with a mounting position, the mounting position is provided at the second connecting portion of the heat sink 300. The area of ​​the insulating thermally conductive sheet 400 is not less than the area of ​​the substrate 210, and the area of ​​the second connecting portion of the heat sink 300 is not less than the area of ​​the insulating thermally conductive sheet 400. Specifically, when the substrate 210, the insulating thermally conductive sheet 400, and the second connecting portion of the heat sink 300 are arranged in a regular shape such as a rectangle, the area is determined by the length and width dimensions; wherein the length of the insulating thermally conductive sheet 400 is not less than the length of the substrate 210, and the width of the insulating thermally conductive sheet 400 is not less than the width of the substrate 210; the length of the second connecting portion of the heat sink 300 is not less than the length of the insulating thermally conductive sheet 400, and the width of the second connecting portion of the heat sink 300 is not less than the width of the insulating thermally conductive sheet 400.

[0046] In one embodiment, the chip assembly 200 further includes a pin, which is connected to the chip assembly 200 and at least partially extends outside the package 100. The chip assembly 200 is provided with at least one pin, and among the multiple pins provided, the multiple pins include a first pin 231, a second pin 232, and the like. Specifically, in the technical solution of the present invention, the pin has a first end and a second end. The first end of the pin is connected to the chip assembly 200, and the second end of the pin is located at the portion of the pin extending outside the package 100.

[0047] In one embodiment, the pins include a first pin 231 and a second pin 232. The first end of the first pin 231 is disposed on the substrate 210, and the second end of the first pin 231 extends outside the package 100. The first end of the second pin 232 is connected to the chip body 220 via a bonding wire 233, and the second end of the second pin 232 extends outside the package 100.

[0048] One of the first pin 231 and the second pin 232 is used as the first electrode of the semiconductor device, and the other is used as the second electrode of the semiconductor device. The first electrode and the second electrode can be defined as an emitter, a gate, a collector, etc. according to actual conditions. The shape and size of the first pin 231 and the second pin 232, the distance between the first pin 231 and the second pin 232, the size of the first end of the first pin 231 connected to the substrate 210, and the binding area of ​​the first end of the second pin 232, the number of connected binding wires 233, etc. can be set according to actual conditions and are not limited here.

[0049] In some other optional embodiments of the present invention, the bending direction of the portion of the first pin 231 extending outside the package body 100 can be specifically set according to the actual setting, so as to further set the orientation of the portion of the first pin 231 extending outside the package body 100, etc., so as to achieve connection with such devices when used in air conditioners such as variable-frequency air conditioners or other devices with high power requirements and device heat dissipation requirements, and to achieve connection to the ground, etc., to ensure the safety and reliability of the circuit connection; the implementation method of the second pin 232 refers to the aforementioned first pin 231 and is not repeated here.

[0050] In one embodiment, the semiconductor device may be, but is not limited to, any one of an IGBT (Insulated Gate Bipolar Transistor), a MOS (Metal-Oxide-Semiconductor Field-Effect Transistor), a diode, and a GAN (Gallium Nitride).

[0051] The specific implementation scheme of the semiconductor device of the present utility model is as follows:

[0052] After completing electrical and reliability tests on the chips, the wafer containing the multiple chips is cut into individual chips, which serve as the chip body 220. A copper heat sink 300, an aluminum heat sink 300, a copper-clad aluminum heat sink 300, a steel heat sink 300, or a combination thereof is selected as the heat sink 300. A copper-clad ceramic sheet, an insulating ceramic sheet, a silicone gasket, or a nylon gasket is selected as the insulating thermal pad 400.

[0053] After the chip assembly 200 and the insulating thermally conductive sheet 400 are encapsulated in the package body 100 and the chip assembly 200 and the insulating thermally conductive sheet 400 are connected, the heat sink 300 is connected to the insulating thermally conductive sheet 400 by covering the side of the insulating thermally conductive sheet 400 away from the chip assembly 200 with a metal thermally conductive medium, and the package body 100 is sealed to ensure that the semiconductor device housing is sealed intact.

[0054] The present invention also proposes an air conditioner, which includes the semiconductor device as described above in the present invention. Since the air conditioner adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, so they will not be described one by one here.

[0055] In one embodiment, the air conditioner is a variable frequency air conditioner. The semiconductor device can be specifically applied to variable frequency air conditioners such as refrigerant heat dissipation variable frequency air conditioners and other devices with high power requirements, heat dissipation requirements, and current carrying capacity requirements.

[0056] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. All equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect application in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A semiconductor device, characterized in that: It includes a package body and a chip component, a heat sink and an insulating heat conductive sheet encapsulated in the package body; The insulating heat-conducting sheet is arranged between the heat sink and the chip component, and is respectively arranged in contact with the heat sink and the chip component.

2. The semiconductor device according to claim 1, wherein The insulating heat-conducting sheet includes any one of a copper-clad ceramic sheet, an insulating ceramic sheet, a silicone gasket, and a nylon gasket, or a combination of multiple thereof.

3. The semiconductor device according to claim 1, wherein A metal heat conducting medium or a non-metal heat conducting medium is provided between the insulating heat conducting sheet and the heat sink.

4. The semiconductor device according to claim 1, wherein The heat sink includes any one of a copper heat sink, an aluminum heat sink, a copper-clad aluminum heat sink, and a steel heat sink.

5. The semiconductor device according to any one of claims 1 to 4, wherein The chip assembly includes a substrate and a chip body. The substrate has a first side and a second side opposite to each other. The chip body is arranged on the first side of the substrate. The second side of the substrate is arranged in contact with the insulating heat conductive sheet.

6. The semiconductor device according to claim 5, wherein The chip assembly further includes pins connected to the chip assembly, and at least a portion of the pins extends out of the package.

7. The semiconductor device according to claim 6, wherein The pins include: a first pin, wherein a first end of the first pin is disposed on the substrate, and a second end of the first pin extends out of the package; A second pin, wherein a first end of the second pin is connected to the chip body through a binding wire, and a second end of the second pin extends out of the package body.

8. The semiconductor device according to any one of claims 1 to 4, wherein: The semiconductor device is any one of an IGBT semiconductor device, a MOS tube, a diode, and a GAN.

9. An air conditioner, characterized in that: The semiconductor device comprises the semiconductor device according to any one of claims 1 to 8.

10. The air conditioner according to claim 9, wherein The air conditioner is a variable frequency air conditioner.