High-bleeder-current low-capacitance protection element for USB3.0 (Universal Serial Bus 3.0)

Abstract

The utility model discloses a high discharge current low capacitance protection element for USB3.0, comprising a plastic package body II, the plastic package body II is provided with a VCC module, a data module I, a data module II and a protection module, and the data module I and the data module II are respectively provided with a diode chip VI and a diode chip IX. A diode chip VII, a diode chip VIII, a diode chip X and a diode chip VI are respectively arranged on the VCC module; and the diode chip VII, the diode chip VIII, the diode chip IX and the diode chip X are chip elements with N-type substrate structures. According to the utility model, a packaging frame structure and chip layout are optimized, key chip elements are transplanted to a VCC module from a protection module, a more conventional N-type substrate chip is used to replace a P-type substrate chip, better superior product parameters that VRWM is equal to 5V, CJ (f is equal to 1MHz, VR is equal to 0V) is less than or equal to 0.8 pF, IPPmax (tp is equal to 8 / 20us) is greater than or equal to 22A, and VESD (Contact Model) is greater than or equal to + / -30KV are obtained, the element processing difficulty is lower, and the purchase cost is lower.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and more particularly to a high-discharge current and low-capacitance protection element for USB 3.0. Background Art

[0002] USB 3.0, considered SuperSpeed ​​USB, is a USB specification initiated by Intel and other companies, offering a maximum transmission bandwidth of up to 5Gbps. USB 3.0 interfaces are widely used in computers, mobile phones, tablets, and other products. Electrostatic discharge (ESD) is a common transient overcurrent threat in USB 3.0 applications. USB 3.0 boasts a high-speed data transfer rate of up to 5Gbps and a standard 5V supply voltage. Therefore, corresponding protection components must have a capacitance of no more than 0.8pF and an operating voltage of no more than 5V. Low capacitance effectively prevents the loss of useful signal data, while low operating voltage provides timely protection for downstream circuits. For practical applications, protection components must have a high discharge current capability of no less than 22A, a low capacitance of no more than 0.8pF, and an ESD resistance rating of up to ±30kV.

[0003] like Figure 4 As shown, it is a conventional SOT23-6L package 2-way unidirectional high discharge current low capacitance protection component used in USB3.0. The performance of this component meets the following requirements: V RWM =5V, C J (f=1MHz,V R =0V)≤0.8pF, IPPmax(tp=8 / 20us)≥22A, VESD(Contact Mode)≥±30kV. Data interface terminal Ⅰ1, ground terminal 2, data interface terminal 3, VCC terminal Ⅰ4, VCC terminal Ⅱ5, VCC terminal Ⅲ6 are the six ports of SOT23-6L. Diode chip Ⅰ7, diode chip Ⅱ8, diode chip Ⅲ9, diode chip Ⅳ10 are set on the plastic package body Ⅰ18. These chips are low-capacitance unidirectional diode chips processed with P-type substrate material. Their parameters meet the following requirements: C J (f=1MHz,V R =0V)≤0.4pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T =1mA)≥100V; Diode chip V11 is a transient suppression unidirectional diode chip processed from P-type substrate material, and its parameters meet the following requirements: C J (f=1MHz,V R =0V)≥20pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T=1mA)≥5V. Bonding wires I12, II13, III14, IV15, V16, and VI17 are typically 1.0-1.5mil Cu wire. Since common low-capacitance unidirectional diode chips and TVS unidirectional diode chips on the market typically use N-type substrate materials, using P-type substrate materials for these chips is unconventional, significantly increasing manufacturing difficulty and procurement costs. Utility Model Content

[0004] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a high discharge current and low capacitance protection element for USB 3.0 to solve one or more of the above problems.

[0005] To achieve the above objectives, the present invention provides the following technical solutions:

[0006] A high-discharge current, low-capacitance protection element for USB 3.0 includes a plastic package body II, on which a VCC module, a data module I, a data module II, and a protection module are provided. The data module I and the data module II are respectively provided with a diode chip VI and a diode chip IX. The VCC module is respectively provided with a diode chip VII, a diode chip VIII, and a diode chip X. The diode chip VI, the diode chip VII, the diode chip VIII, the diode chip IX, and the diode chip X are all chip components with an N-type substrate structure.

[0007] Furthermore, the data module I and the data module II both have an L-shaped cross-sectional structure, the protection module has a T-shaped cross-sectional structure, the VCC module has an E-shaped cross-sectional structure, and the VCC module is provided with a protruding section for mounting the diode chip X.

[0008] Furthermore, the protection module is grounded through the ground terminal, the data module I is externally connected through the data interface terminal I, the data module II is externally connected through the data interface terminal II, and the VCC module is externally connected through the VCC terminal I, VCC terminal II, and VCC terminal III.

[0009] Furthermore, the VCC terminal I is set corresponding to the diode chip VIII, the VCC terminal II is set corresponding to the diode chip X, the VCC terminal III is set corresponding to the diode chip VII, the data interface terminal I is set corresponding to the diode chip VI, and the data interface terminal II is set corresponding to the diode chip IX.

[0010] Furthermore, the diode chip VI is connected to the protection module via bonding wire VIII, the diode chip VII is connected to the data module I via bonding wire VII, the diode chip VIII is connected to the data module II via bonding wire X, the diode chip IX is connected to the protection module via bonding wire IX, and the diode chip X is connected to the protection module via bonding wires XI and XII.

[0011] Furthermore, the bonding wires VII, VIII, IX, X, XI, and XII are all copper wires with a thickness of 1.0 mil to 1.5 mil.

[0012] In summary, the present invention has the following beneficial effects: by optimizing the packaging frame structure and chip layout, the key chip components are transplanted from the protection module to the VCC module, and the more conventional N-type substrate chip is used to replace the P-type substrate chip, thereby obtaining better product parameters V RWM =5V, C J (f=1MHz,V R =0V)≤0.8pF, IPPmax(tp=8 / 20us)≥22A, VESD(Contact Mode)≥±30KV, the components are easier to process and the procurement cost is also lower. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A structural perspective view of an embodiment of the present invention;

[0014] Figure 2 This is an appearance diagram of an embodiment of the present invention;

[0015] Figure 3 An equivalent circuit diagram of an embodiment of the present invention;

[0016] Figure 4 A schematic diagram of a conventional protection element structure in an existing manner provided by the present invention;

[0017] Figure 5 This is a volt-ampere characteristic curve diagram of an embodiment of the present invention.

[0018] In the figure: 1. Data interface terminal I; 2. Ground terminal; 3. Data interface terminal II; 4. VCC terminal I; 5. VCC terminal II; 6. VCC terminal III; 7. Diode chip I; 8. Diode chip II; 9. Diode chip III; 10. Diode chip IV; 11. Diode chip V; 12. Wire bonding I; 13. Wire bonding II; 14. Wire bonding III; 15. Wire bonding IV; 16. Wire bonding V; 17. Wire bonding VI; 18. Plastic package I; 19. Diode chip VI; 20. Diode chip VII; 21. Diode chip VIII; 22. Diode chip IX; 23. Diode chip X; 24. Wire bonding VII; 25. Wire bonding VIII; 26. Wire bonding IX; 27. Wire bonding X; 28. Wire bonding XI; 29. ​​Wire bonding XII; 30. Plastic package II. DETAILED DESCRIPTION

[0019] Comparative Example:

[0020] The following is combined with Figure 4 For further explanation.

[0021] A conventional SOT23-6L packaged, two-way, unidirectional, high-discharge current, low-capacitance protection component for USB 3.0 applications features a VCC module, data module I, data module II, and a protection module within a plastic package body I18. Data module I, data module II, and the protection module are located on the left side of the plastic package body I18, while the VCC module is located on the right side. Data module I has an L-shaped cross-section and is equipped with a diode chip I7, which is connected externally via data interface terminal I1. Data module II has an L-shaped cross-section and is equipped with a diode chip IV10, which is connected externally via data interface terminal II3. The keep-alive module has a T-shaped cross-section and is equipped with a diode chip V11. Diode chips II8 and III9 are symmetrically located at the upper and lower ends to the left of diode chip V11. To accommodate diode chip V11, the protection module is extended to the right and grounded via ground terminal 2. Correspondingly, the VCC module on the right has an E-shaped cross-section. To accommodate the expansion of the protection module, a right-side recessed structure is formed on the left side. The three branch sections of the VCC module correspond to the externally connected VCC terminals I4, II5, and III6, respectively. The portion of the VCC module corresponding to VCC terminal III6 is connected to diode chip I7 on data module I via bonding wire I12. The portion of the VCC module corresponding to VCC terminal II5 is connected to diode chip V11 on the protection module via bonding wires II13 and III14. The portion of the VCC module corresponding to VCC terminal I4 is connected to diode chip IV10 on data module II via bonding wire IV15. Data module I is connected to diode chip II8 on the protection module via bonding wire VI17, and data module II is connected to diode chip III9 on the protection module via bonding wire V16.

[0022] Bonding wires I12, II13, III14, IV15, V16, and VI17 are all 1.0mil-1.5mil Cu wires. Diode chips I7, II8, III9, and IV10 are low-capacitance unidirectional diode chips made of P-type substrate materials, and their parameters meet the following requirements: J (f=1MHz,V R =0V)≤0.4pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T =1mA)≥100V. Diode chip V11 is a transient suppression unidirectional diode chip made of P-type substrate material, and its parameters meet the following requirements: C J (f=1MHz,V R =0V)≥20pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T =1mA)≥5V.

[0023] Example:

[0024] The following is combined with Figure 1 、 2 , 3, and 5 further describe the utility model in detail.

[0025] A high discharge current and low capacitance protection component for USB3.0, such as Figure 1 and Figure 2As shown, a VCC module, data module I, data module II, and protection module are provided on the plastic package II 30. Data module I, data module II, and protection module are provided on the left side of the plastic package II 30, while the VCC module is provided on the right side of the plastic package II 30. Data module I has an L-shaped cross-section structure, on which a diode chip VI 19 is provided, which is externally connected via data interface terminal I 1. Data module II has an L-shaped cross-section structure, on which a diode chip IX 22 is provided, which is externally connected via data interface terminal II 3. The protection module has a T-shaped cross-section structure, on which no diode chip is provided, and is grounded via ground terminal 2. To accommodate the subsequent installation of the VCC module, the overall thickness of the top portion of the T is reduced, and it has a relative indentation compared to the nearby data modules I and II. The VCC module has an E-shaped cross-section. Its left side features a protruding section for mounting diode chip X23. The module's three branch sections correspond to external VCC terminals I4, II5, and III6, respectively. VCC terminal I4 corresponds to diode chip VIII21, VCC terminal II5 corresponds to diode chip X23, and VCC terminal III6 corresponds to diode chip VII20. Diode chip VI19 connects to the protection module via bonding wire VIII25. Diode chip VII20 connects to data module I via bonding wire VII24. Diode chip VIII21 connects to data module II via bonding wire X27. Diode chip IX22 connects to the protection module via bonding wire IX26. Diode chip X23 connects to the protection module via bonding wires XI28 and XII29.

[0026] Bonding wires VII24, VIII25, IX26, X27, XI28, and XII29 are all 1.0-1.5 mil copper wires. Diode chips VI19, VII20, VIII21, and IX22 are low-capacitance unidirectional diode chips made from common N-type substrate materials. Their parameters need to meet the following requirements: J (f=1MHz,V R =0V)≤0.4pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T =1mA)≥100V, VESD (Contact Mode)≥±30KV. The diode chip X23 is a transient suppression unidirectional diode chip made of N-type substrate material, and its parameters need to meet the following requirements: C J (f=1MHz,V R =0V)≥20pF, IPPmax(tp=8 / 20us)≥22A, V BR (I T =1mA)≥5V, VESD(Contact Mode)≥±30KV.

[0027] Data interface terminal Ⅰ1 and data interface terminal Ⅱ3 are 2-way I / O data interface terminals, and VCC terminal Ⅰ4, VCC terminal Ⅱ5, and VCC terminal Ⅲ6 are connected. Figure 3 As shown, the diode has a forward conduction characteristic from the ground terminal 2 to the data interface terminal Ⅰ1 or the data interface terminal Ⅱ3, and a reverse breakdown protection characteristic from the data interface terminal Ⅰ1 or the data interface terminal Ⅱ3 to the ground terminal 2. Figure 5 As shown, from the ground terminal 2 to one of the VCC terminals Ⅰ4, VCC terminal Ⅱ5, and VCC terminal Ⅲ6 is the forward conduction characteristic of the diode, and from one of the VCC terminals Ⅰ4, VCC terminal Ⅱ5, and VCC terminal Ⅲ6 to the ground terminal 2 is the reverse breakdown protection characteristic of the diode.

[0028] By optimizing the package frame structure and chip layout, V RWM =5V, C J (f=1MHz,V R =0V)≤0.8pF, IPPmax(tp=8 / 20us)≥22A, VESD(Contact Mode)≥±30kV. Compared to existing conventional solutions, low-capacitance unidirectional diode chips and transient voltage suppression unidirectional diode chips manufactured with N-type substrate materials are not only easier to manufacture but also have lower procurement costs.

[0029] It should be noted that this specific embodiment is merely an explanation of the present invention and is not a limitation of the present invention. After reading this specification, those skilled in the art may make non-creative modifications to the present embodiment as needed, but as long as they are within the scope of the claims of the present invention, they are protected by patent law.

Claims

1. A high discharge current and low capacitance protection element for USB 3.0, comprising a plastic package II (30), characterized in that: The plastic package body II (30) is provided with a VCC module, a data module I, a data module II and a protection module. The data module I and the data module II are respectively provided with a diode chip VI (19) and a diode chip IX (22). The VCC module is respectively provided with a diode chip VII (20), a diode chip VIII (21) and a diode chip X (23). The diode chip VI (19), the diode chip VII (20), the diode chip VIII (21), the diode chip IX (22) and the diode chip X (23) are all chip components with an N-type substrate structure.

2. The high discharge current and low capacitance protection element for USB 3.0 according to claim 1, characterized in that: The data module I and the data module II both have an L-shaped cross-sectional structure, the protection module has a T-shaped cross-sectional structure, the VCC module has an E-shaped cross-sectional structure, and a protruding section is provided on the VCC module for mounting the diode chip X (23).

3. The high discharge current and low capacitance protection element for USB 3.0 according to claim 1, characterized in that: The protection module is grounded via the ground terminal (2), the data module I is externally connected via the data interface terminal I (1), the data module II is externally connected via the data interface terminal II (3), and the VCC module is externally connected via the VCC terminal I (4), the VCC terminal II (5), and the VCC terminal III (6).

4. The high discharge current and low capacitance protection element for USB 3.0 according to claim 3, characterized in that: The VCC terminal I (4) is arranged corresponding to the diode chip VIII (21), the VCC terminal II (5) is arranged corresponding to the diode chip X (23), the VCC terminal III (6) is arranged corresponding to the diode chip VII (20), the data interface terminal I (1) is arranged corresponding to the diode chip VI (19), and the data interface terminal II (3) is arranged corresponding to the diode chip IX (22).

5. The high discharge current and low capacitance protection component for USB 3.0 according to claim 1, characterized in that: The diode chip VI (19) is connected to the protection module via bonding wire VIII (25), the diode chip VII (20) is connected to the data module I via bonding wire VII (24), the diode chip VIII (21) is connected to the data module II via bonding wire X (27), the diode chip IX (22) is connected to the protection module via bonding wire IX (26), and the diode chip X is connected to the protection module via bonding wires XI (28) and XII (29).

6. The high discharge current and low capacitance protection element for USB 3.0 according to claim 5, characterized in that: The bonding wire VII (24), bonding wire VIII (25), bonding wire IX (26), bonding wire X (27), bonding wire XI (28), and bonding wire XII (29) are all copper wires with a thickness of 1.0 mil to 1.5 mil.

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