Crystal mechanical parameter measuring device

Abstract

The utility model relates to the technical field of crystals, and particularly discloses a crystal mechanical parameter measuring device. The device comprises an ultrasonic generator, an ultrasonic probe, a thickness measuring piece and a controller. The to-be-detected crystal comprises a first side and a second side which are opposite, the ultrasonic generators are distributed on the first side, and the ultrasonic probes are distributed on the second side and used for receiving ultrasonic signals sent by the ultrasonic generators; the thickness measuring piece is used for measuring the thickness of the to-be-measured crystal; the controller is electrically connected with the ultrasonic probe and the thickness measuring piece. According to the crystal mechanical parameter measuring device, the mechanical parameters of the to-be-measured crystal can be measured in an ultrasonic measuring mode, the measuring precision is high, the measuring method is simple, the measuring efficiency is high, and the to-be-measured crystal cannot be damaged.

Description

Technical Field

[0001] The present application relates to the field of crystal technology, and in particular to a device for measuring crystal mechanical parameters. Background Art

[0002] In applications such as laser communications, laser resonators, and nonlinear optics, the growth quality of optical crystal materials is crucial and significantly impacts the performance of optical components. For example, during the crystal growth process, uneven heating in the crystal furnace, impurities in the growth material, and inappropriate crystal rotation speeds can lead to the formation of density-inhomogeneous layers, stress-induced layers, and even stress cracks. Therefore, it is necessary to measure crystal parameters to adjust the growth process. However, current methods for measuring crystal mechanical parameters present several challenges, requiring urgent improvement. Utility Model Content

[0003] Based on this, it is necessary to provide a crystal mechanical parameter measurement device to address the above problems, including an ultrasonic generator, an ultrasonic probe, a thickness measuring device and a controller;

[0004] The crystal to be measured comprises a first side and a second side opposite to each other, the ultrasonic generator is distributed on the first side, and the ultrasonic probe is distributed on the second side for receiving the ultrasonic signal emitted by the ultrasonic generator; the thickness measuring member is used to measure the thickness of the crystal to be measured;

[0005] The controller is electrically connected to the ultrasonic probe and the thickness measuring component respectively.

[0006] In one embodiment, a first clip is provided on the surface of the first side of the crystal to be measured, and the first clip is connected to the ultrasonic generator. A second clip is provided on the surface of the second side of the crystal to be measured, and the second clip is connected to the ultrasonic probe.

[0007] In one embodiment, the first clip and the second clip are piezoelectric ceramics.

[0008] In one embodiment, the thickness measuring element includes a grating ruler.

[0009] In one embodiment, the crystal mechanical parameter measuring device further includes a support member, and the support member is respectively connected to the first clamp and the second clamp.

[0010] In one embodiment, the thickness measuring member is connected to the supporting member.

[0011] In one embodiment, the support member is made of metal.

[0012] In one embodiment, the crystal to be tested includes any one of Nd:YAG, LiNbO3, and LiTaO3.

[0013] The crystal mechanical parameter measuring device provided in the embodiment of the present application comprises a crystal to be measured comprising a first side and a second side relative to each other, an ultrasonic generator distributed on the first side, and an ultrasonic probe distributed on the second side, wherein the ultrasonic generator can emit an ultrasonic signal, and the ultrasonic signal can propagate within the crystal to be measured and then be received by the ultrasonic probe, and in addition, a thickness measuring piece can measure the thickness of the crystal to be measured, and the thickness measuring piece and the ultrasonic probe are both connected to a controller, so that the controller can obtain the ultrasonic signal received by the ultrasonic probe and the thickness of the crystal to be measured measured by the thickness measuring piece, and thereby determine the mechanical parameters of the crystal to be measured. The above-mentioned crystal mechanical parameter measuring device can measure the mechanical parameters of the crystal to be measured by ultrasonic measurement, with high measurement accuracy, simple measurement method, high measurement efficiency, and no damage to the crystal to be measured. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A schematic structural diagram of a crystal mechanical parameter measurement device provided in one embodiment of the present application;

[0015] Figure 2 A flowchart of a method for measuring crystal mechanical parameters according to an embodiment of the present application;

[0016] Figure 3 is a waveform diagram of an ultrasonic pulse signal in a specific example;

[0017] Figure 4 FIG. 1 is a schematic diagram of the spectrum of an ultrasonic pulse signal in a specific example.

[0018] Description of reference numerals:

[0019] 100 , ultrasonic generator; 200 , ultrasonic probe; 300 , thickness measuring member; 400 , controller; 500 , crystal to be measured; 600 , first clamp; 700 , second clamp; 800 , support member. DETAILED DESCRIPTION

[0020] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0021] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0022] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0024] In applications such as laser communications, laser resonators, and nonlinear optics, the growth quality of optical crystal materials is crucial and significantly impacts the performance of optical components. For example, during the crystal growth process, uneven heating in the crystal furnace, impurities in the growth material, and inappropriate crystal rotation speeds can lead to the formation of density-inhomogeneous layers, stress-induced layers, and even stress cracks. Therefore, it is necessary to measure crystal parameters to adjust the growth process. However, current methods for measuring crystal mechanical parameters present several challenges, requiring urgent improvement.

[0025] Specifically, the currently widely used methods for measuring the mechanical parameters of crystal materials mainly include mechanical methods, electrical measurement methods, and non-contact acoustic and optical methods. Among them, the mechanical method requires applying force to the crystal sample to be measured. For crystal materials, this method can easily cause the crystal to crack, making the crystal sample to be measured unusable; the electrical measurement method is to add a layer of electrode sheet to the crystal sample to be measured, which is equivalent to adding patch stiffness, which actually increases the measurement error; the non-contact acoustic method has poor measurement accuracy, and the non-contact optical measurement method has high sample preparation requirements for the crystal sample to be measured.

[0026] In summary, the current methods for measuring the mechanical parameters of crystals all have their own drawbacks.

[0027] To address the above issues, embodiments of the present application provide a crystal mechanical parameter measurement device. The crystal mechanical parameter measurement device provided by this embodiment can use ultrasonic waves to measure the mechanical parameters of a crystal under test, achieving high measurement accuracy and efficiency, while also being simple, requiring minimal damage to the crystal under test, and preventing damage to the crystal.

[0028] Reference Figure 1 The crystal mechanical parameter measuring device provided in this embodiment includes an ultrasonic generator 100 , an ultrasonic probe 200 , a thickness measuring component 300 and a controller 400 .

[0029] The crystal to be measured 500 includes a first side and a second side that are opposite to each other. The ultrasonic generator 100 is located on the first side, and the ultrasonic probe 200 is located on the second side, for receiving ultrasonic signals emitted by the ultrasonic generator 100. During an actual measurement, the ultrasonic generator 100 can emit ultrasonic signals from the first side of the crystal to be measured 500 toward the crystal to be measured 500. The ultrasonic signals can propagate within the crystal to be measured 500 and be detected by the ultrasonic probe 200 on the second side of the crystal to be measured 500.

[0030] The thickness measuring device 300 can be used to measure the thickness of the crystal 500 to be measured. The thickness measuring device 300 can be a grating ruler or other thickness measuring device 300, such as a laser rangefinder. Specifically, the thickness of the crystal 500 to be measured by the thickness measuring device 300 refers to the distance between the first side surface and the second side surface of the crystal 500 to be measured.

[0031] The controller 400 is electrically connected to the ultrasonic probe 200 and the thickness measuring device 300. Specifically, the controller 400 can obtain the ultrasonic signal detected by the ultrasonic probe 200 and the thickness of the crystal 500 measured by the thickness measuring device 300, and determine the mechanical parameters of the crystal 500 accordingly.

[0032] In the crystal mechanical parameter measurement device provided in the embodiment of the present application, a crystal 500 to be measured includes a first side and a second side, an ultrasonic generator 100 is located on the first side, and an ultrasonic probe 200 is located on the second side. The ultrasonic generator 100 can emit an ultrasonic signal that can propagate within the crystal 500 to be measured and then be received by the ultrasonic probe 200. Furthermore, the thickness measuring device 300 can measure the thickness of the crystal 500 to be measured. Therefore, the mechanical parameters of the crystal 500 to be measured can be determined based on the ultrasonic signal received by the ultrasonic probe 200 and the thickness of the crystal 500 to be measured by the thickness measuring device 300. This method of measuring the mechanical parameters of a crystal using ultrasound has a high degree of automation and high measurement accuracy, and is simple and efficient. It does not damage the crystal 500 to be measured and does not place high demands on the crystal 500 itself.

[0033] Specifically, the controller 400 can be configured to: determine the sound velocity within the crystal 500 to be tested based on the ultrasonic signal received by the ultrasonic probe 200 and the thickness of the crystal 500 to be tested measured by the thickness measuring device 300; and determine the mechanical parameters of the crystal 500 to be tested based on the sound velocity within the crystal 500 to be tested. That is, the controller 400 can respectively obtain the ultrasonic signal detected by the ultrasonic probe 200 and the thickness of the crystal 500 to be tested measured by the thickness measuring device 300, and then analyze and process the received data to obtain the sound velocity within the crystal 500 to be tested, and determine the mechanical parameters of the crystal 500 to be tested based on the sound velocity within the crystal 500 to be tested.

[0034] Specifically, the ultrasonic generator 100 can generate an ultrasonic pulse signal at time T0, which propagates within the crystal 500 to be measured. The ultrasonic pulse signal can then be received by the ultrasonic probe 200 at time T1. The time difference between the time T0 when the ultrasonic pulse signal is emitted and the time T1 when the ultrasonic pulse signal is received can be determined, i.e., the time delay of the ultrasonic signal. Based on the time delay of the ultrasonic signal and the thickness of the crystal 500 to be measured, as measured by the thickness measuring device 300, the sound velocity within the crystal 500 to be measured can be determined. Furthermore, based on the sound velocity within the crystal 500 to be measured, the mechanical parameters of the crystal 500 to be measured can be determined.

[0035] Specifically, the ultrasound probe 200 may include an analog-digital acquisition chip, which is used to convert the acquired ultrasound signals into electrical signals for processing by the controller 400 .

[0036] The controller 400 may include a high-speed single-chip microcomputer, for example, an STM32 series single-chip microcomputer with a clock signal of 80 MHz or above. The pulse center of the collected ultrasonic waveform is calculated, and the difference calculation is performed on the initial time when the ultrasonic generator 100 emits the ultrasonic signal to obtain the time delay of the ultrasonic signal, and then the sound speed is calculated, and the mechanical parameters of the crystal 500 to be measured are obtained based on the sound speed calculation.

[0037] In this embodiment, the mechanical parameters of the crystal 500 to be tested may include elastic modulus, Poisson's ratio, etc.

[0038] In this embodiment, the crystal to be tested 500 may include any one of Nd:YAG (neodymium-doped yttrium aluminum garnet), LiNbO 3 (lithium niobate), and LiTaO 3 (lithium tantalate crystal).

[0039] Reference Figure 1 In one embodiment, a first clip 600 is provided on a first side of the crystal 500 to be tested, and the first clip 600 is connected to the ultrasonic generator 100. A second clip 700 is provided on a second side of the crystal 500 to be tested, and the second clip 700 is connected to the ultrasonic probe 200. Specifically, the crystal 500 to be tested is clamped between the first and second clips 600 and 700, respectively, from the first and second sides of the crystal 500. Simultaneously, the ultrasonic generator 100 is connected to the first clip 600 and transmits ultrasonic signals toward the first clip 600. The ultrasonic probe 200 is connected to the second clip 700, and the ultrasonic signals propagating within the crystal 500 to be tested can be received by the ultrasonic probe 200 through the second clip 700.

[0040] The orthographic projection of the crystal 500 to be measured on the first clamp 600 falls within the area where the first clamp 600 is located, and the orthographic projection of the crystal 500 to be measured on the second clamp 700 falls within the area where the second clamp 700 is located.

[0041] In one embodiment, the first clip 600 and the second clip 700 are made of piezoelectric ceramics.

[0042] In this embodiment, the ultrasonic generator 100 includes a transducer and an electrical pulse generator. The electrical pulse generator is used to generate a pulsed high-voltage electrical signal, which in turn excites the piezoelectric ceramic within the ultrasonic generator 100 to produce a pulsed ultrasonic signal. The pulsed ultrasonic signal is better transmitted to the crystal 500 to be measured via a first clip 600 made of piezoelectric ceramics in close contact with the first side of the crystal 500 to be measured, thereby allowing the ultrasonic signal to propagate within the crystal 500 to be measured. Finally, it is transmitted to the ultrasonic probe 200 via a second clip 700 made of piezoelectric ceramics in close contact with the second side of the crystal 500 to be measured.

[0043] In one embodiment, the crystal mechanical parameter measurement device further includes a support member 800, which is respectively connected to the first clamp 600 and the second clamp 700. That is, the first clamp 600 and the second clamp 700 can be connected to the support member 800. In actual use, the support member 800, the first clamp 600, and the second clamp 700 can form a whole for clamping the crystal 500 to be measured. The crystal 500 to be measured is clamped between the first clamp 600 and the second clamp 700.

[0044] In this embodiment, the support member 800 can be made of metal. The support member 800 made of metal has a higher hardness, which helps to improve its supporting force.

[0045] In one embodiment, the thickness measuring member 300 is connected to the support member 800. When the thickness measuring member 300 is connected to the support member 800, the first clamping piece 600, the second clamping piece 700, the thickness measuring member 300, and the support member 800 form an integral structure. When it is necessary to measure the mechanical parameters of the crystal 500 to be measured, it is only necessary to place the crystal 500 to be measured between the first clamping piece 600 and the second clamping piece 700, clamp it by the first clamping piece 600 and the second clamping piece 700, and arrange the ultrasonic generator 100 and the ultrasonic probe 200. This eliminates the need for much preparatory work before the test, simplifying the measurement process.

[0046] In one embodiment, a crystal mechanical parameter measurement method is provided, which is applied to a crystal mechanical parameter measurement device. The crystal mechanical parameter measurement device can be the crystal mechanical parameter measurement device provided in the aforementioned embodiment, or a crystal mechanical parameter measurement device of another structure. The following description uses the crystal mechanical parameter measurement device provided in the aforementioned embodiment as an example.

[0047] Specifically, refer to Figure 1The crystal mechanical parameter measuring device includes an ultrasonic generator 100, an ultrasonic probe 200, and a thickness measuring device 300. The crystal 500 to be measured includes a first side and a second side that are opposite to each other. The ultrasonic generator 100 is disposed on the first side, and the ultrasonic probe 200 is disposed on the second side and is configured to receive ultrasonic signals emitted by the ultrasonic generator 100. The thickness measuring device 300 is configured to measure the thickness of the crystal 500 to be measured. The specific structure of the crystal mechanical parameter measuring device can be found in the previous description and will not be repeated here.

[0048] Reference Figure 2 The crystal mechanical parameter measurement method provided in this embodiment includes the following steps:

[0049] Step S200 , determining the time T0 when the ultrasonic generator 100 sends the ultrasonic signal and the time T1 when the ultrasonic probe 200 receives the ultrasonic signal.

[0050] At the start of a measurement, the ultrasonic generator 100 on the first side of the crystal 500 to be measured can be controlled to generate an ultrasonic pulse signal. The ultrasonic pulse signal enters the crystal 500 to be measured, propagates, and is ultimately received by the ultrasonic probe 200 located on the second side of the crystal 500 to be measured. Specifically, the time when the ultrasonic generator 100 emits the ultrasonic signal and the time when the ultrasonic probe 200 receives the ultrasonic signal can be first determined, so that the propagation time of the ultrasonic signal within the crystal 500 to be measured can be subsequently calculated.

[0051] Step S400: Determine the time delay of the ultrasonic signal according to T0 and T1.

[0052] After determining the time T0 when the ultrasonic generator 100 emits the ultrasonic signal and the time T1 when the ultrasonic probe 200 receives the ultrasonic signal, the propagation time of the ultrasonic signal within the crystal 500 to be tested, i.e., the ultrasonic signal delay, can be determined based on T0 and T1. Specifically, the difference between T1 and T0 can be used as the ultrasonic signal delay ΔT, i.e., ΔT = T1 - T0.

[0053] Step S600 : determining the sound velocity in the crystal 500 to be measured according to the time delay of the ultrasonic signal and the thickness of the crystal 500 to be measured.

[0054] After the time delay of the ultrasonic signal is determined, since the thickness of the crystal 500 to be measured can be measured by the thickness measuring device 300 , the speed of sound in the crystal 500 to be measured can be determined by combining the time delay of the ultrasonic signal and the thickness of the crystal 500 to be measured.

[0055] Specifically, the sound velocity in the crystal 500 to be measured can be expressed as: Wherein, V is the sound velocity in the crystal 500 to be measured, L is the thickness of the crystal 500 to be measured, and ΔT is the time delay of the ultrasonic signal.

[0056] Specifically, crystals are anisotropic. Even with the same sound wave propagation direction, the vibration directions of transverse waves and longitudinal waves are different, and the propagation speeds within the crystal will also be different. Ultrasonic signals can emit different forms of sound waves as needed, thereby obtaining the propagation speeds of the two waves.

[0057] Step S800 : determining the mechanical parameters of the crystal 500 to be measured according to the sound velocity in the crystal 500 to be measured.

[0058] Once the sound velocity in the crystal 500 to be measured is determined, the mechanical parameters of the crystal 500 to be measured can be determined.

[0059] In one embodiment, step S800, i.e., the step of determining the mechanical parameters of the crystal 500 to be tested based on the sound velocity in the crystal 500 to be tested, may specifically include:

[0060] The elastic modulus and Poisson's ratio of the crystal 500 to be tested are determined by the following formula:

[0061]

[0062] Wherein, E is the elastic modulus of the crystal 500 to be tested, μ is Poisson's ratio, ρ is the medium density, and C L is the longitudinal wave velocity in the crystal 500 to be tested, C s is the shear wave velocity in the crystal 500 to be measured,

[0063] In one specific example, the ultrasonic generator 100 generates Figure 3 The ultrasonic pulse signal shown in the figure has an ultrasonic frequency of f and a center time of T0. According to the ultrasonic frequency, its spectrum is as follows: Figure 4 For materials that require precise measurement, multiple ultrasonic frequencies f1, f2, ..., f N The sound velocity of the ultrasonic pulse signal can be measured, thereby obtaining a more accurate elastic modulus.

[0064] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and such modifications and improvements are all within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A crystal mechanical parameter measuring device, characterized in that: It includes an ultrasonic generator, an ultrasonic probe, a thickness measuring device and a controller; The crystal to be measured comprises a first side and a second side opposite to each other, the ultrasonic generator is distributed on the first side, and the ultrasonic probe is distributed on the second side for receiving the ultrasonic signal emitted by the ultrasonic generator; the thickness measuring member is used to measure the thickness of the crystal to be measured; The controller is electrically connected to the ultrasonic probe and the thickness measuring component respectively.

2. The crystal mechanical parameter measuring device according to claim 1, characterized in that: A first clip is provided on the surface of the first side of the crystal to be measured, and the first clip is connected to the ultrasonic generator. A second clip is provided on the surface of the second side of the crystal to be measured, and the second clip is connected to the ultrasonic probe.

3. The crystal mechanical parameter measuring device according to claim 2, characterized in that: The first clip and the second clip are piezoelectric ceramics.

4. The crystal mechanical parameter measuring device according to claim 2, characterized in that: The thickness measuring component includes a grating scale.

5. The crystal mechanical parameter measuring device according to claim 2, characterized in that: The crystal mechanical parameter measuring device further includes a support member, and the support member is respectively connected to the first clamp and the second clamp.

6. The crystal mechanical parameter measuring device according to claim 5, characterized in that: The thickness measuring member is connected to the supporting member.

7. The crystal mechanical parameter measuring device according to claim 5, characterized in that: The support member is made of metal.

8. The crystal mechanical parameter measuring device according to claim 1, characterized in that: The crystal to be tested includes any one of Nd:YAG, LiNbO3, and LiTaO3.

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