Intelligent power module and electric appliance

Abstract

The utility model discloses an intelligent power module and an electric appliance, and relates to the technical field of semiconductors. The power module comprises a chipset, a first copper-clad ceramic substrate and a first sintering layer, the chipset comprises at least one power chip, the first copper-clad ceramic substrate is provided with a copper column corresponding to an electrode area of the power chip, the first sintering layer is arranged on the power chip and the first copper-clad ceramic substrate, and the first sintering layer is arranged on the power chip and the first copper-clad ceramic substrate. The copper column is embedded in the first sintering layer, and the power chip is electrically connected with the first copper-clad ceramic substrate through the first sintering layer. Therefore, a bonding wire between the power chip and the first copper-clad ceramic substrate is eliminated, the problem of electrical connection failure caused by fracture or key-off of the bonding wire due to thermal stress or external vibration is avoided, and the electrical stability of the intelligent power module is greatly improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an intelligent power module and an electrical appliance. Background Art

[0002] Intelligent Power Modules (IPMs) are hybrid integrated power electronic devices widely used in various fields due to their advantages, including high current density, low saturation voltage drop, low drive power, and compact size. The widespread use of IPM modules in various power-consuming fields is placing higher demands on IPM modules, driving their development towards higher integration, smaller size, and higher power density.

[0003] However, current IPM modules generally utilize aluminum and gold bonding wires for internal electrical connections. Due to the high chip integration density, IPM modules can experience localized overheating during operation, potentially leading to electrical failure between the module chip and substrate, and between the module chip and the pin bonding wires. Furthermore, bonding wires can be susceptible to breakage or debonding when subjected to internal thermal stress or external vibration, significantly reducing the module's electrical stability. Utility Model Content

[0004] In view of the above problems, the present invention is proposed to provide an intelligent power module and an electrical appliance that overcome the above problems or at least partially solve the above problems.

[0005] According to a first aspect of the present invention, an intelligent power module is provided, comprising:

[0006] a chipset, the chipset comprising at least one power chip;

[0007] a first copper-clad ceramic substrate, wherein a copper pillar is provided in an electrode area of ​​the first copper-clad ceramic substrate corresponding to the power chip;

[0008] A first sintered layer is provided on the power chip and the first copper-clad ceramic substrate, and the copper column is embedded in the first sintered layer. The power chip and the first copper-clad ceramic substrate are electrically connected through the first sintered layer.

[0009] An optional utility model content, the thickness of the copper column is between 1 and 100 μm.

[0010] An optional utility model content is that when the chipset includes at least two power chips, the difference in chip thickness between any two of the power chips is within 100 μm.

[0011] An optional utility model content, the thickness of the first sintered layer is 20 to 150 μm.

[0012] In an optional utility model, the intelligent power module further includes a second copper-clad ceramic substrate, which is located on an end surface of the power chip away from the first copper-clad ceramic substrate to transfer heat from the power chip.

[0013] In an optional utility model, a first connection layer is provided between the second copper-clad ceramic substrate and the power chip, and an electrical connection is formed between the second copper-clad ceramic substrate and the power chip through the first connection layer.

[0014] In an optional utility model, the intelligent power module further includes a substrate frame, and the substrate frame is electrically connected to the first copper-clad ceramic substrate and the second copper-clad ceramic substrate respectively.

[0015] In an optional utility model, the intelligent power module further includes a plastic package, which covers the side surfaces of the first copper-clad ceramic substrate and the end surface of the first copper-clad ceramic substrate close to the power chip.

[0016] In an optional utility model, the plastic package body covers the end surface of the second copper-clad ceramic substrate close to the power chip and the side surface of the second copper-clad ceramic substrate.

[0017] An optional utility model content, the intelligent power module further includes:

[0018] a thermally conductive adhesive layer, the thermally conductive adhesive layer being located on an end surface of the second copper-clad ceramic substrate away from the power chip;

[0019] A heat sink is arranged on the end surface of the thermally conductive adhesive layer away from the power chip, and is bonded to the second copper-clad ceramic substrate through the thermally conductive adhesive layer to transfer heat from the second copper-clad ceramic substrate to the heat sink.

[0020] Based on the second aspect of the present invention, an electrical appliance is further provided, comprising the intelligent power module as described in any one of the above-mentioned utility models.

[0021] Compared to the prior art, the present invention includes a chipset, a first copper-clad ceramic substrate, and a first sintered layer. The chipset includes at least one power chip, the first copper-clad ceramic substrate is provided with copper pillars corresponding to the electrode areas of the power chip, the first sintered layer is provided on the power chip and the first copper-clad ceramic substrate, and the copper pillars are embedded in the first sintered layer. The power chip and the first copper-clad ceramic substrate are electrically connected through the first sintered layer. This eliminates the need for bonding wires between the power chip and the first copper-clad ceramic substrate, preventing electrical connection failure caused by bond wire breakage or debonding due to thermal stress or external vibration, and significantly improving the electrical stability of the intelligent power module.

[0022] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be construed as limiting the present invention. The same reference numerals are used throughout the accompanying drawings to denote the same components.

[0024] In the attached figure:

[0025] Figure 1 This is a schematic structural diagram of an intelligent power module provided by an embodiment of the present utility model;

[0026] Figure 2 This is a schematic structural diagram of a first copper-clad ceramic substrate provided by an embodiment of the present utility model;

[0027] Figure 3 This is a structural diagram of another intelligent power module provided by an embodiment of the present utility model;

[0028] Figure 4 This is a schematic diagram of an exploded structure of an intelligent power module provided by an embodiment of the present utility model;

[0029] Figure 5 This is a schematic flow chart of the steps of a method for manufacturing an intelligent power module provided by an embodiment of the present utility model;

[0030] Figure numerals: 1. power chip; 2. first copper-clad ceramic substrate; 21. copper pillar; 3. first sintered layer; 4. second copper-clad ceramic substrate; 5. first connection layer; 6. substrate frame; 7. plastic package; 8. thermal conductive adhesive layer; 9. heat sink; 10. driver chip; 11. gold bonding wire. DETAILED DESCRIPTION

[0031] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0032] Intelligent Power Modules (IPMs) are hybrid integrated power electronic devices widely used in various fields due to their advantages, including high current density, low saturation voltage drop, low drive power, and compact size. The widespread use of IPM modules in various power-consuming fields is placing higher demands on IPM modules, driving their development towards higher integration, smaller size, and higher power density.

[0033] However, current IPM modules generally utilize aluminum and gold bonding wires for internal electrical connections. Due to the high chip integration density, IPM modules can experience localized overheating during operation, potentially leading to electrical failure between the module chip and substrate, and between the module chip and the pin bonding wires. Furthermore, bonding wires can be susceptible to breakage or debonding when subjected to internal thermal stress or external vibration, significantly reducing the module's electrical stability.

[0034] Based on the above-mentioned problems, an embodiment of the present invention is proposed. The embodiment of the present invention may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3. The chipset includes at least one power chip 1. The first copper-clad ceramic substrate 2 is provided with copper pillars 21 in electrode regions corresponding to the power chip 1. The first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillars 21 are embedded in the first sintered layer 3. The power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3. As a result, the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 are eliminated, avoiding electrical connection failure caused by breakage or debonding of the bonding wires due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0035] Reference Figures 1 to 4An embodiment of the present invention provides an intelligent power module, which may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3, wherein the chipset includes at least one power chip 1, the first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1, the first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillar 21 is embedded in the first sintered layer 3, and the power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3.

[0036] In an embodiment of the present invention, the intelligent power module may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3. The chipset may include at least one power chip 1, and the power chip 1 may include but is not limited to power semiconductor devices such as IGBT (Insulated Gate Bipolar Transistor), transistor, Fast Recovery Diode (FRD), and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The power chip 1 is a key component that generates a large amount of heat in the intelligent power module. The first copper-clad ceramic substrate 2 may be a DBC (Direct Bond Copper) board, wherein the DBC board can be understood as a substrate formed by eutectic sintering of a ceramic substrate and copper foil at a high temperature (e.g., 1065°C), and finally, according to wiring requirements, a circuit is formed by etching.

[0037] The first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. For example, the copper pillar 21 and the first copper-clad ceramic substrate 2 are an integrated structure. The first sintered layer 3 is used to realize the electrical connection between the first copper-clad ceramic substrate 2 and the electrode of the power chip 1. The first sintered layer 3 can be fixed and formed by a sintering process, thereby making the copper pillar 21 embedded in the first sintered layer 3, and then sintering between the copper pillar 21 and the first sintered layer 3 can ensure the structural connection stability between the power chip 1 and the first copper-clad ceramic substrate 2, while also ensuring the electrical connection stability between the power chip 1 and the first copper-clad ceramic substrate 2. As a result, the bonding wire between the power chip 1 and the first copper-clad ceramic substrate 2 is eliminated, avoiding the problem of electrical connection failure caused by breakage or debonding of the bonding wire due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0038] Furthermore, this can prevent the addition of bonding wires when the intelligent power module has a high integration density, leading to increased parasitic stray inductance. The presence of stray inductance not only prolongs the switching process and increases switching losses, but can also interfere with the switching of the power chip 1, such as causing malfunctions. Therefore, eliminating the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 can also improve the operational stability of the intelligent power module in high-integration scenarios.

[0039] In the embodiment of the present invention, those skilled in the art can determine the specific number of power chips 1 according to actual design requirements. For example, the number of power chips 1 can be 4, 5, or 8, etc. No further limitation is given here.

[0040] An optional embodiment of the utility model, referring to Figure 1 、 Figure 3 as well as Figure 4 As shown, the intelligent power module may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3, wherein the chipset includes at least one power chip 1, and the first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. The thickness of the copper pillar 21 is between 1 and 100 μm (micrometers). The first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillar 21 is embedded in the first sintered layer 3. The power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3.

[0041] In an embodiment of the present invention, the intelligent power module may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3. The chipset may include at least one power chip 1, and the power chip 1 may include but is not limited to power semiconductor devices such as IGBT (Insulated Gate Bipolar Transistor), transistor, Fast Recovery Diode (FRD), and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The power chip 1 is a key component that generates a large amount of heat in the intelligent power module. The first copper-clad ceramic substrate 2 may be a DBC (Direct Bond Copper) board, wherein the DBC board can be understood as a substrate formed by eutectic sintering of a ceramic substrate and copper foil at a high temperature (e.g., 1065°C), and finally, according to wiring requirements, a circuit is formed by etching.

[0042] The first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. For example, the copper pillar 21 and the first copper-clad ceramic substrate 2 are an integrated structure. The thickness of the copper pillar 21 is between 1 and 100 μm. In some embodiments, the thickness of the copper pillar 21 can be set to 1 μm; in other embodiments, the thickness of the copper pillar 21 can be set to 50 μm; in still other embodiments, the thickness of the copper pillar 21 can be set to 60 μm; in still other embodiments, the thickness of the copper pillar 21 can be set to 100 μm. Those skilled in the art can determine the specific thickness of the copper pillar 21 based on actual test results, so that the thickness of the copper pillar 21 used as a support for sintering is appropriate and is not excessively limited here.

[0043] The first sintered layer 3 is used to realize the electrical connection between the first copper-clad ceramic substrate 2 and the electrode of the power chip 1. The first sintered layer 3 can be fixed and formed by a sintering process, thereby making the copper pillar 21 embedded in the first sintered layer 3, and then sintering between the copper pillar 21 and the first sintered layer 3 can ensure the structural connection stability between the power chip 1 and the first copper-clad ceramic substrate 2, while also ensuring the electrical connection stability between the power chip 1 and the first copper-clad ceramic substrate 2. As a result, the bonding wire between the power chip 1 and the first copper-clad ceramic substrate 2 is eliminated, avoiding the problem of electrical connection failure caused by breakage or debonding of the bonding wire due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0044] Furthermore, this can prevent the addition of bonding wires when the intelligent power module has a high integration density, leading to increased parasitic stray inductance. The presence of stray inductance not only prolongs the switching process and increases switching losses, but can also interfere with the switching of the power chip 1, such as causing malfunctions. Therefore, eliminating the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 can also improve the operational stability of the intelligent power module in high-integration scenarios.

[0045] In the embodiment of the present invention, those skilled in the art can determine the specific number of power chips 1 according to actual design requirements. For example, the number of power chips 1 can be 4, 5, or 8, etc. No further limitation is given here.

[0046] An optional embodiment of the utility model, the intelligent power module may include a chipset, a first copper-clad ceramic substrate 2 and a first sintered layer 3, wherein the chipset includes at least one power chip 1, and the first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. The thickness of the copper pillar 21 is between 1 and 100 μm (micrometers). The first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillar 21 is embedded in the first sintered layer 3, and the power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3. Wherein, when the chipset includes at least two power chips 1, the difference in chip thickness between any two of the power chips 1 is within 100 μm.

[0047] In the embodiment of the present invention, the thickness of the copper pillar 21 is between 1 and 100 μm. In some embodiments, the thickness of the copper pillar 21 can be set to 1 μm; in other embodiments, the thickness of the copper pillar 21 can be set to 50 μm; in still other embodiments, the thickness of the copper pillar 21 can be set to 60 μm; in still other embodiments, the thickness of the copper pillar 21 can be set to 100 μm. Those skilled in the art can determine the specific thickness of the copper pillar 21 based on actual test results, so that the thickness of the copper pillar 21 used as a support for sintering is appropriate and is not further limited here.

[0048] Those skilled in the art can determine the specific number of power chips 1 based on actual design requirements. For example, the number of power chips 1 can be 4, 5, or 8. No further restrictions are imposed here. When the chipset includes at least two power chips 1, the difference in chip thickness between any two of the power chips 1 is within 100 μm. In other words, the maximum thickness difference of the multiple power chips 1 is 100 μm.

[0049] For example, when the chipset includes two power chips 1, the thickness of one IGBT chip is 150 μm, and the thickness of the other FRD chip is 180 μm. Then, the maximum thickness difference between the IGBT chip and the FRD chip is 30 μm.

[0050] For another example, when the chipset includes three power chips 1, the thickness of one IGBT chip is 150 μm, the thickness of the second FRD chip is 180 μm, and the thickness of the third MOSFET chip is 120 μm. The maximum chip thickness difference is the thickness difference between the FRD chip and the MOSFET chip, which is 60 μm. Similarly, the maximum chip thickness difference of at least two of the power chips 1 is controlled to be within 100 μm. Among them, controlling the thickness difference of all power chips 1 can facilitate the control of the thickness of the first sintered layer 3 provided on different power chips 1, so that the thickness of the first sintered layer 3 can be sufficient to support the firmness of the connection structure between the first copper-clad ceramic substrate 2 and the power chip 1. Avoid electrical connection failure caused by breakage of the connection due to thermal stress or external vibration.

[0051] An optional embodiment of the utility model, referring to Figures 1 to 4 As shown, the intelligent power module may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3, wherein the chipset includes at least one power chip 1, and the first copper-clad ceramic substrate 2 is provided with copper pillars 21 corresponding to the electrode area of ​​the power chip 1. The first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillars 21 are embedded in the first sintered layer 3. The thickness of the first sintered layer 3 is 20 to 150 μm. The power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3. In the case where the chipset includes at least two power chips 1, the difference in chip thickness between any two of the power chips 1 is within 100 μm.

[0052] In an embodiment of the present invention, the first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. For example, the copper pillar 21 and the first copper-clad ceramic substrate 2 are an integrated structure. The first sintered layer 3 is used to realize the electrical connection between the first copper-clad ceramic substrate 2 and the electrode of the power chip 1. The first sintered layer 3 can be fixedly formed by a sintering process, thereby making the copper pillar 21 embedded in the first sintered layer 3, and then sintering between the copper pillar 21 and the first sintered layer 3 is performed, which can ensure the structural connection stability between the power chip 1 and the first copper-clad ceramic substrate 2, and at the same time, can also ensure the electrical connection stability between the power chip 1 and the first copper-clad ceramic substrate 2. As a result, the bonding wire between the power chip 1 and the first copper-clad ceramic substrate 2 is eliminated, avoiding the problem of electrical connection failure caused by breakage or debonding of the bonding wire due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0053] Furthermore, this can prevent the addition of bonding wires when the intelligent power module has a high integration density, leading to increased parasitic stray inductance. The presence of stray inductance not only prolongs the switching process and increases switching losses, but can also interfere with the switching of the power chip 1, such as causing malfunctions. Therefore, eliminating the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 can also improve the operational stability of the intelligent power module in high-integration scenarios.

[0054] When the chipset includes at least two power chips 1, the difference in chip thickness between any two of the power chips 1 is within 100 μm. In other words, the maximum thickness difference between the plurality of power chips 1 is 100 μm. For example, when the chipset includes two power chips 1, one IGBT chip has a thickness of 150 μm, and the other FRD chip has a thickness of 180 μm, the maximum thickness difference between the IGBT chip and the FRD chip is 30 μm.

[0055] For another example, if the chipset includes three power chips 1, one IGBT chip has a thickness of 150 μm, the second FRD chip has a thickness of 180 μm, and the third MOSFET chip has a thickness of 120 μm, then the maximum chip thickness difference is 60 μm, which is the thickness difference between the FRD chip and the MOSFET chip. Similarly, the maximum chip thickness difference of at least two power chips 1 is controlled to be within 100 μm.

[0056] Controlling the thickness difference of all power chips 1 can facilitate the control of the thickness of the first sintered layer 3 set on different power chips 1, so that the thickness of the first sintered layer 3 can be sufficient to support the structural firmness of the connection between the first copper-clad ceramic substrate 2 and the power chip 1. Avoid electrical connection failure problems caused by breakage of the connection due to thermal stress or external vibration. In some optional embodiments, the thickness of the first sintered layer 3 is 20 to 150 μm. For example, the thickness of the first sintered layer 3 can be set to 20 μm; for another example, the thickness of the first sintered layer 3 can be set to 50 μm; for another example, the thickness of the first sintered layer 3 can be set to 80 μm; for another example, the thickness of the first sintered layer 3 can be set to 150 μm.

[0057] For power chips 1 of varying thicknesses, the thickness of the first sintered layer 3 disposed on the surface of the power chip 1 can vary. This ensures that the sum of the thickness of the first sintered layer 3 and the thickness of the corresponding power chip 1 is uniform throughout, allowing the end surface of the first sintered layer 3 facing away from the power chip 1 to be flush, ensuring that the first copper-clad ceramic substrate 2 is arranged parallel to the horizontal direction. The thickness of the first sintered layer 3 is greater than or equal to the thickness of the copper pillars 21, thereby ensuring a secure connection between the copper pillars 21 and the first sintered layer 3.

[0058] An optional embodiment of the utility model, referring to Figure 1 、 Figure 3 as well as Figure 4 As shown, the intelligent power module may further include a second copper-clad ceramic substrate 4 , which is located on the end surface of the power chip 1 away from the first copper-clad ceramic substrate 2 to transfer heat from the power chip 1 .

[0059] In an embodiment of the present invention, the intelligent power module may further include a second copper-clad ceramic substrate 4, which may also be a DBC (Direct Bond Copper) board. A DBC board can be understood as a substrate formed by eutectic sintering a ceramic substrate and copper foil at a high temperature (e.g., 1065°C), and then etching circuits according to wiring requirements. The second copper-clad ceramic substrate 4 is located on the end face of the power chip 1 away from the first copper-clad ceramic substrate 2 and is used to transfer heat from the power chip 1.

[0060] Because the power chip 1 is a key component of the intelligent power module that generates a large amount of heat during operation, the power chip 1 can also form a bidirectional heat dissipation path through the first copper-clad ceramic substrate 2 and the second copper-clad ceramic substrate. Heat from one end surface of the power chip 1 is transferred to the first copper-clad ceramic substrate 2, and heat from the other end surface of the power chip 1 is transferred to the second copper-clad ceramic substrate 4. This allows heat generated by the power chip 1 to be quickly transferred in both directions. This improves the heat dissipation capability of the intelligent power module, facilitates increased chip integration, and enhances the operational stability of the intelligent power module.

[0061] An optional embodiment of the utility model, referring to Figure 1 and Figure 3 As shown, a first connection layer 5 is provided between the second copper-clad ceramic substrate 4 and the power chip 1 , and an electrical connection is formed between the second copper-clad ceramic substrate 4 and the power chip 1 through the first connection layer 5 .

[0062] In an embodiment of the present invention, the first connection layer 5 is used to form an electrical connection between the second copper-clad ceramic substrate 4 and the power chip 1. This connection layer can be achieved by soldering with solder paste, or it can be made of copper solder paste or silver solder paste using a sintering process. In a preferred embodiment, the first connection layer 5 is made of the aforementioned material with a high thermal conductivity. This ensures the electrical connection between the power chip 1 and the second copper-clad ceramic substrate 4 while also facilitating the rapid transfer of heat generated by the power chip 1 to the second copper-clad ceramic substrate 4 via the first connection layer 5, thereby further optimizing the heat dissipation performance of the intelligent power module.

[0063] An optional embodiment of the utility model, referring to Figure 1 、 Figure 3 as well as Figure 4 As shown, the intelligent power module further includes a substrate frame 6 , and the substrate frame 6 is electrically connected to the first copper-clad ceramic substrate 2 and the second copper-clad ceramic substrate 4 .

[0064] In the embodiment of the present invention, the substrate frame 6 is primarily used to lead out the electrodes of the power chip 1, and can also be understood as the pins of the intelligent power module, which are used to form an electrical connection with an external circuit board. The substrate frame 6 is electrically connected to the first copper-clad ceramic substrate 2 and the second copper-clad ceramic substrate 4, respectively. The measures taken to form the electrical connection can be soldering with tin paste, copper solder paste, or silver solder paste made using a sintering process.

[0065] In some other optional embodiments of the utility model, referring to Figure 1 and Figure 3 As shown, the intelligent power module may further include a driver chip 10, which is located on the substrate frame 6. Gold bonding wires 11 may be used to form a bond between the driver chip 10 and the substrate frame 6, or between the driver chip 10 and the power chip 1. Considering that the current passing through the gold bonding wires 11 between the driver chip 10 and the power chip 1 is very small, and the number of gold bonding wires 11 is relatively small, the risk of electrical connection failure caused by the gold bonding wires 11 between the driver chip 10 and the power chip 1 is negligible compared to the high-current bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2.

[0066] An optional embodiment of the utility model, referring to Figure 1 and Figure 3 As shown, the intelligent power module may further include a plastic package 7 , which covers the side surfaces of the first copper-clad ceramic substrate 2 and the end surface of the first copper-clad ceramic substrate 2 close to the power chip 1 .

[0067] In an embodiment of the present invention, the intelligent power module may further include a plastic encapsulation body 7. The plastic encapsulation body 7 may be made of a material such as epoxy resin, which may cover the side surface of the first copper-clad ceramic substrate 2 and the end surface of the first copper-clad ceramic substrate 2 close to the power chip 1. This may improve the connection stability between the first copper-clad ceramic substrate 2 and the power chip 1, and may also ensure the electrical insulation performance of the intelligent power module. In particular, considering that the thermal conductivity of the plastic encapsulation body 7 is relatively low, when the first copper-clad ceramic substrate 2 is surrounded, the end surface of the first copper-clad ceramic substrate 2 away from the power chip 1 leaks out of the plastic encapsulation body 7. This may ensure that the heat generated on the power chip 1 can pass through the first sintered layer 3, and then be transferred from the first sintered layer 3 to the first copper-clad ceramic substrate 2, and finally be transferred to the air of the external environment through the first copper-clad ceramic substrate 2, thereby achieving rapid heat dissipation in the power chip 1, which is beneficial to the high-integration design of the intelligent power module.

[0068] An optional embodiment of the utility model, referring to Figure 1 As shown, the plastic package body 7 covers the end surface of the second copper-clad ceramic substrate 4 close to the power chip 1 and the side surface of the second copper-clad ceramic substrate 4 .

[0069] In an embodiment of the present invention, the plastic encapsulation body 7 can also cover the end face of the second copper-clad ceramic substrate 4 close to the power chip 1 and the side face of the second copper-clad ceramic substrate 4. This can improve the connection stability between the second copper-clad ceramic substrate 4 and the power chip 1, and can also ensure the electrical insulation performance of the intelligent power module. In particular, considering that the thermal conductivity of the plastic encapsulation body 7 is relatively small, when the second copper-clad ceramic substrate 4 is surrounded, the end face of the second copper-clad ceramic substrate 4 away from the power chip 1 leaks out of the plastic encapsulation body 7. This can ensure that the heat generated on the power chip 1 can pass through the first connecting layer 5, and then be transferred to the second copper-clad ceramic substrate 4 by the first connecting layer 5, and finally be transferred to the air of the external environment through the second copper-clad ceramic substrate 4, so that the heat in the power chip 1 can be quickly dissipated, which is beneficial to the high integration design of the intelligent power module.

[0070] An optional embodiment of the utility model, referring to Figure 3 As shown, the intelligent power module may further include a thermally conductive adhesive layer 8 and a heat sink 9. The thermally conductive adhesive layer 8 is located on the end surface of the second copper-clad ceramic substrate 4 away from the power chip 1. The heat sink 9 is disposed on the end surface of the thermally conductive adhesive layer 8 away from the power chip 1 and is bonded to the second copper-clad ceramic substrate 4 via the thermally conductive adhesive layer 8 to transfer heat from the second copper-clad ceramic substrate 4 to the heat sink 9.

[0071] In an embodiment of the present invention, the intelligent power module may further include a thermally conductive adhesive layer 8 and a heat sink 9. The heat sink 9 is disposed on the end surface of the thermally conductive adhesive layer 8 facing away from the second copper-clad ceramic substrate 4 to dissipate heat from the second copper-clad ceramic substrate 4. The thermally conductive adhesive layer 8 may be made of glue with a high thermal conductivity. It serves to bond the heat sink 9 to the second copper-clad ceramic substrate 4 and to more quickly transfer heat from the second copper-clad ceramic substrate 4 to the heat sink 9. This allows the heat sink 9 to dissipate heat from the power chip 1 more quickly.

[0072] The heat generated on the power chip 1 can pass through the first connection layer 5, and then be transferred to the second copper-clad ceramic substrate 4 by the first connection layer 5, and finally be transferred to the thermal conductive adhesive layer 8 through the second copper-clad ceramic substrate 4, and then be transferred to the air of the external environment through the thermal conductive adhesive layer 8, thereby realizing rapid heat dissipation in the power chip 1, which is conducive to the high-integration design of the intelligent power module.

[0073] In an embodiment of the present invention, the end surface of the second copper-clad ceramic substrate 4 close to the heat sink 9 can be insulated, thereby preventing the second copper-clad ceramic substrate 4 from forming an electrical connection with the heat sink 9, thereby preventing the heat sink 9 from short-circuiting.

[0074] In summary, the present invention discloses an intelligent power module, which may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3. The chipset includes at least one power chip 1, the first copper-clad ceramic substrate 2 is provided with copper pillars 21 in electrode regions corresponding to the power chip 1, the first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillars 21 are embedded in the first sintered layer 3. The power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected via the first sintered layer 3. This eliminates the need for bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2, preventing electrical connection failure caused by breakage or debonding of bonding wires due to thermal stress or external vibration, and significantly improving the electrical stability of the intelligent power module.

[0075] An embodiment of the present utility model further discloses an electrical appliance, which may include the intelligent power module as described in any one of the above-mentioned embodiments of the utility model.

[0076] In the embodiment of the present invention, the electrical appliances may include appliances with low-power motor drive scenarios, wherein the electrical appliances may include but are not limited to household appliances, industrial servers, water pumps, etc. For example, the household appliances may include fans, range hoods, blowers, etc.

[0077] In summary, the present invention also discloses an electrical appliance, which may include a chipset, a first copper-clad ceramic substrate 2, and a first sintered layer 3. The chipset includes at least one power chip 1, the first copper-clad ceramic substrate 2 is provided with copper pillars 21 in electrode regions corresponding to the power chip 1, the first sintered layer 3 is provided on the power chip 1 and the first copper-clad ceramic substrate 2, and the copper pillars 21 are embedded in the first sintered layer 3. The power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3. This eliminates the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2, avoids electrical connection failure caused by breakage or debonding of the bonding wires due to thermal stress or external vibration, and greatly improves the electrical stability of the intelligent power module.

[0078] Reference Figure 5 As shown, the embodiment of the present invention further discloses a method for manufacturing an intelligent power module, wherein the intelligent power module includes the intelligent power module as described in any one of the above embodiments of the utility model. The manufacturing method may include:

[0079] S501 , providing a chipset and a first copper-clad ceramic substrate 2 , wherein the chipset includes at least one power chip 1 , and the first copper-clad ceramic substrate 2 is provided with copper pillars 21 in electrode regions corresponding to the power chip 1 .

[0080] In an embodiment of the present invention, the chipset may include at least one power chip 1, and the power chip 1 may include but is not limited to power semiconductor devices such as IGBT (Insulated Gate Bipolar Transistor), transistor, Fast Recovery Diode (FRD) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The power chip 1 is a key component that generates a large amount of heat in the intelligent power module. The first copper-clad ceramic substrate 2 may be a DBC (Direct Bond Copper) board, wherein the DBC board can be understood as a substrate formed by eutectic sintering of a ceramic substrate and copper foil at a high temperature (such as 1065°C), and finally forming a circuit by etching according to wiring requirements.

[0081] The thickness of different types of power chips 1 may be inconsistent, and the maximum thickness difference between different power chips 1 is guaranteed to be within 100μm. For example, the thickness of the IGBT chip is set to 110μm, and the thickness of the FRD chip is set to 80μm. The first copper-clad ceramic substrate 2 is provided with a copper pillar 21 corresponding to the electrode area of ​​the power chip 1. For example, the copper pillar 21 and the first copper-clad ceramic substrate 2 are an integrated structure. Among them, the copper pillar 21 is a rectangular parallelepiped with a height of 60μm, and the length and width of the copper pillar 21 are within 50 to 500μm. For example, the length of the copper pillar 21 is set to 200μm, and the width of the copper pillar 21 is set to 50μm.

[0082] In other embodiments, the copper pillar 21 may be a cylindrical structure, the thickness of the copper pillar 21 may be 100 μm, and the radius of the copper pillar 21 may be set to 50-500 μm. For example, the radius of the copper pillar 21 may be 100 μm.

[0083] 402 . Print a first solder paste layer on the power chip 1 , and cover the first copper-clad ceramic substrate 2 on the first solder paste layer, so that the copper pillar 21 extends into the first solder paste layer.

[0084] In an embodiment of the present invention, a certain thickness of nano-copper solder paste is printed on the power chip 1, forming a first solder paste layer disposed on one end face of the power chip 1. Nano-copper refers to copper particles or copper nanocrystals with a diameter between 1 and 100 nanometers. The thickness of the first solder paste layer can be adjusted by the thickness of the screen steel plate, and the first solder paste layer is printed on the power chip 1 using screen printing. The thickness of the first solder paste layer is set within a range of 20 to 150 μm. For example, a 60 μm thick first solder paste layer is printed on the end face of the IGBT chip, and a 90 μm thick first solder paste layer is printed on the end face of the FRD chip. This ensures that the cumulative thickness of the IGBT chip and the first solder paste layer on its end face is consistent with the cumulative thickness of the FRD chip and the first solder paste layer on its end face. This ensures that the first copper-clad ceramic substrate 2 can be placed horizontally on the mounting surface formed by multiple first solder paste layers.

[0085] The first copper-clad ceramic substrate 2 is covered on the first solder paste layer, so that under the gravity of the first copper-clad ceramic substrate 2 , the copper pillars 21 provided on the first copper-clad ceramic substrate 2 extend into the first solder paste layer.

[0086] S503 , sintering the first solder paste layer and the copper pillar 21 to form the first sintered layer 3 , wherein the power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3 .

[0087] In an embodiment of the present invention, the copper pillar 21 extending into the first solder paste layer is sintered to the first solder paste layer. The sintering atmosphere can be a mixture of argon and hydrogen, and the sintering temperature can be set within a range of 250°C to 280°C (inclusive). The sintering time is set to 5 to 30 minutes.

[0088] Due to the nano-size effect, nano-copper can be sintered and connected at a temperature far below its bulk melting point. Specifically, the sintering behavior of nano-copper benefits from the migration and diffusion of metal particles, and the diffusion and migration of nano-metal particles depend on the driving energy between two mutually contacting nano-metal particles, and the driving energy increases as the particle size of the metal particles decreases. When external energy is applied, the driving energy will further increase, which enables the nano-metal particles to sinter to form a porous connector at a temperature far below their bulk melting point. In addition, during the sintering process, the nano-copper is in a solid state, so the first solder paste layer will not flow, avoiding the risk of chip movement or misconnection to other electrodes due to solder paste flow. During the sintering process of the copper pillar 21 and the first solder paste layer, the copper pillar 21 extends into the first solder paste layer and plays a supporting role in the nano-copper pre-sintering stage. After the organic solvent in the nano-metal solder paste is heated and evaporated, the temperature is raised to the sintering temperature, and the nano-copper connects the power chip 1 to the copper pillar 21, thereby constructing an electrical connection channel between the power chip 1 and the first copper-clad ceramic substrate 2. On the one hand, the structural connection stability between the power chip 1 and the first copper-clad ceramic substrate 2 can be ensured. On the other hand, the electrical connection stability between the power chip 1 and the first copper-clad ceramic substrate 2 can also be ensured. As a result, the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 are eliminated, avoiding electrical connection failure caused by bond wire breakage or debonding due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0089] Furthermore, this can prevent the addition of bonding wires when the intelligent power module has a high integration density, leading to increased parasitic stray inductance. The presence of stray inductance not only prolongs the switching process and increases switching losses, but can also interfere with the switching of the power chip 1, such as causing malfunctions. Therefore, eliminating the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 can also improve the operational stability of the intelligent power module in high-integration scenarios.

[0090] In some optional embodiments of the utility model, the second copper-clad ceramic substrate 4 can also be welded to the substrate frame 6. Then, the combined structure of the driver chip 10, the power chip 1 and the first copper-clad ceramic substrate 2 is welded to the second copper-clad ceramic substrate 4 respectively. The welding material can be tin-based solder. Since the melting point of the first sintered layer 3 is higher than the melting point of the tin-based solder after the nano-metal copper solder paste is sintered, it can be ensured that the first copper-clad ceramic substrate 2 will not fall off or slide during this welding process. Then, the driver chip 10 and the gate of the switching device are bonded by gold bonding wires 11 to form an electrical connection. Finally, the intelligent power module is subjected to packaging process operations such as plastic sealing, curing molding and rib cutting to obtain a packaged intelligent power module.

[0091] In summary, an embodiment of the present invention discloses a method for manufacturing an intelligent power module. The method may include first providing a chipset and a first copper-clad ceramic substrate 2, wherein the chipset includes at least one power chip 1, and the first copper-clad ceramic substrate 2 is provided with copper pillars 21 corresponding to the electrode area of ​​the power chip 1. Then, a first solder paste layer is printed on the power chip 1, and the first copper-clad ceramic substrate 2 is covered on the first solder paste layer so that the copper pillars 21 extend into the first solder paste layer. Finally, the first solder paste layer and the copper pillars 21 are sintered to form a first sintered layer 3, wherein the power chip 1 and the first copper-clad ceramic substrate 2 are electrically connected through the first sintered layer 3. In this way, the bonding wires between the power chip 1 and the first copper-clad ceramic substrate 2 can be eliminated, avoiding the problem of electrical connection failure caused by breakage or debonding of the bonding wires due to thermal stress or external vibration, and greatly improving the electrical stability of the intelligent power module.

[0092] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0093] It is easy for those skilled in the art to think that any combination of the above embodiments is feasible, so any combination of the above embodiments is an implementation scheme of the present utility model. However, due to space limitations, this specification will not describe them in detail here.

[0094] In the description provided herein, numerous specific details are described. However, it is understood that embodiments of the present invention may be practiced without these specific details. In some instances, well-known methods, structures, and techniques are not shown in detail so as not to obscure the understanding of this description.

[0095] Similarly, it should be understood that in order to streamline the present invention and aid in understanding one or more of the various aspects of the present invention, in the above description of exemplary embodiments of the present invention, various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof.

[0096] Furthermore, those skilled in the art will appreciate that although some embodiments described herein include certain features included in other embodiments but not other features, combinations of features from different embodiments are intended to be within the scope of the present invention and to form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.

Claims

1. An intelligent power module, characterized in that: The intelligent power module includes: A chipset, the chipset comprising at least one power chip (1); a first copper-clad ceramic substrate (2), wherein the first copper-clad ceramic substrate (2) is provided with a copper column (21) in an electrode region corresponding to the power chip (1); A first sintered layer (3), wherein the first sintered layer (3) is arranged on the power chip (1) and the first copper-clad ceramic substrate (2), and the copper column (21) is embedded in the first sintered layer (3), and the power chip (1) and the first copper-clad ceramic substrate (2) are electrically connected through the first sintered layer (3).

2. The intelligent power module according to claim 1, characterized in that: The thickness of the copper column (21) is between 1 and 100 μm.

3. The intelligent power module according to claim 1, wherein: When the chipset includes at least two power chips (1), the difference in chip thickness between any two of the power chips (1) is within 100 μm.

4. The intelligent power module according to claim 3, characterized in that: The thickness of the first sintered layer (3) is 20 to 150 μm.

5. The intelligent power module according to claim 1, wherein: The intelligent power module further comprises a second copper-clad ceramic substrate (4), which is located on the end face of the power chip (1) away from the first copper-clad ceramic substrate (2) to transfer heat from the power chip (1).

6. The intelligent power module according to claim 5, characterized in that: A first connection layer (5) is provided between the second copper-clad ceramic substrate (4) and the power chip (1), and an electrical connection is formed between the second copper-clad ceramic substrate (4) and the power chip (1) through the first connection layer (5).

7. The intelligent power module according to claim 5, characterized in that: The intelligent power module further comprises a substrate frame (6), and the substrate frame (6) is electrically connected to the first copper-clad ceramic substrate (2) and the second copper-clad ceramic substrate (4), respectively.

8. The intelligent power module according to claim 5, characterized in that: The intelligent power module further comprises a plastic package (7), wherein the plastic package (7) covers the side surface of the first copper-clad ceramic substrate (2) and the end surface of the first copper-clad ceramic substrate (2) close to the power chip (1).

9. The intelligent power module according to claim 8, characterized in that: The plastic package (7) covers the end surface of the second copper-clad ceramic substrate (4) close to the power chip (1) and the side surface of the second copper-clad ceramic substrate (4).

10. The intelligent power module according to claim 5, characterized in that: The intelligent power module further includes: a thermally conductive adhesive layer (8), the thermally conductive adhesive layer (8) being located on an end surface of the second copper-clad ceramic substrate (4) away from the power chip (1); A heat sink (9) is provided on the end face of the thermally conductive adhesive layer (8) away from the power chip (1), and is bonded to the second copper-clad ceramic substrate (4) via the thermally conductive adhesive layer (8) to transfer heat from the second copper-clad ceramic substrate (4) to the heat sink (9).

11. An electrical appliance, characterized in that: The electrical appliance includes the intelligent power module according to any one of claims 1 to 10.

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