Intelligent high-side driving circuit with adjustable vehicle body domain control driving current slew rate

Abstract

The utility model discloses an intelligent high-side driving circuit with an adjustable vehicle body domain control driving current slew rate. The intelligent high-side driving circuit comprises a current slew rate adjustable circuit, a short-circuit detection and quick response protection circuit and an output clamping circuit, wherein the short-circuit detection and quick response protection circuit and the output clamping circuit are connected with the current slew rate adjustable circuit. The utility model has the following advantages and effects: through accurate resistance-capacitance matching, the on-off rate of the MOS tube MOS2 is controlled; the intelligent control system not only can meet the strict EMC standard, but also improves the intelligence and safety of an automobile electrical system, fills up the market blank, and has a wide application prospect.

Description

Technical Field

[0001] The utility model relates to the field of automobile control circuits, and in particular to an intelligent high-side drive circuit with adjustable vehicle body domain control drive current slew rate. Background Art

[0002] In today's highly integrated automotive electrical architectures, body zone controllers play a crucial role. They must not only precisely manage multiple complex electrical systems but also adhere to stringent electromagnetic compatibility (EMC) standards set by automakers and others. Specifically for seat cushion heating and steering wheel heating systems, these standards clearly stipulate an upper limit on the high-side driver current slew rate of no more than 10A / ms. This is intended to significantly reduce electromagnetic emissions, protect passengers from potential health risks, and prevent unnecessary interference with other delicate electronic devices within the vehicle.

[0003] Existing high-side driver circuits with adjustable current slew rate suffer from limited functionality and poor stability. Therefore, we have developed a high-side intelligent MOS transistor driver circuit with integrated short-circuit protection, inductive load clamping, and adjustable output current slew rate. This circuit controls the MOS transistor's switching rate through precise resistor-capacitor matching. This circuit not only meets stringent EMC standards but also enhances the intelligence and safety of automotive electrical systems, filling a market gap and possessing broad application prospects. Utility Model Content

[0004] The purpose of the utility model is to provide an intelligent high-side driver circuit with adjustable vehicle body domain control drive current slew rate, so as to solve the problems raised in the background technology.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions:

[0006] An intelligent high-side driver circuit with adjustable current slew rate for vehicle body domain control driving comprises a current slew rate adjustable circuit, a short-circuit detection and fast response protection circuit and an output clamping circuit connected to the current slew rate adjustable circuit;

[0007] The current slew rate adjustable circuit includes a resistor R31, a resistor R36, a resistor R37, a resistor R39, a resistor R40, a resistor R40, a resistor R43, a resistor R44, a resistor R46, a resistor R47, a capacitor C6, a capacitor C12, a transistor Q12, a transistor Q14, a transistor Q16, a MOS transistor MOS2 and a voltage stabilizing diode D5;

[0008] One end of resistor R31 is connected to the power supply VCC, and the other end of resistor R31 is connected to one end of resistor R44 and the base of transistor Q14. The other end of resistor R44 is connected to the emitter of transistor Q14 and one end of resistor R46, which also serves as an input terminal connected to the enable terminal of the MCU; the other end of resistor R46 is connected to one end of resistor R47 and the base of transistor Q16, and the other end of resistor R47 and the emitter of transistor Q16 are both grounded.

[0009] The collector of transistor Q14 is connected to one end of resistor R39. The other end of resistor R39 is connected to one end of resistor R36 and the base of transistor Q12. The other end of resistor R36 is connected to one end of resistor R37, one end of capacitor C12, the emitter of transistor Q12, the cathode of Zener diode D5, and the source of MOS transistor MOS2. The other end of resistor R37 is connected to the other end of capacitor C12 and is also connected to one end of resistor R43, one end of resistor R40, the anode of Zener diode D5, and the gate of MOS transistor MOS2. The other end of resistor R43 is connected to the collector of transistor Q16, and the other end of resistor R40 is connected to the collector of transistor Q12. A capacitor C6 is connected between the drain of MOS transistor MOS2 and ground, and this end also serves as an output end.

[0010] Further configuration is: the short circuit detection and fast response protection circuit includes a resistor R32, a resistor R33, a resistor R34, a resistor R35, a resistor R38, a resistor R41, a resistor R42, a resistor R45, a capacitor C10, a capacitor C11, a capacitor C13, a current detection amplifier U3, a transistor Q13 and a transistor Q15;

[0011] One end of resistor R32 is connected to one end of capacitor C11 and pin 8 of current detection amplifier U3, and this end is also connected to power supply battery VBAT2, and the other end of capacitor C11 is grounded; the other end of resistor R32 is connected to pin 7 of current detection amplifier U3 and the source of MOS transistor MOS2; pin 1 of current detection amplifier U3 is connected to one end of resistor R42 and one end of resistor R33, and this end is also connected to power supply VCC; capacitor C10 is connected between power supply VCC and ground; the other end of resistor R33 is connected to pin 5 of current detection amplifier U3 and one end of capacitor C13, and the other end of capacitor C13 and pin 4 of current detection amplifier U3 are both grounded; pin 2 of current detection amplifier U3 is connected to one end of resistor R34, and the other end of resistor R34 is connected to one end of resistor R38 and pin 3 of current detection amplifier U3, and the other end of resistor R38 is grounded;

[0012] The other end of resistor R42 is connected to pin 6 of current detection amplifier U3, one end of resistor R45, and the base of transistor Q15. The other end of resistor R45 and the emitter of transistor Q15 are both grounded. The collector of transistor Q15 is connected to one end of resistor R41. The other end of resistor R41 is connected to one end of resistor R35 and the base of transistor Q13. The other end of resistor R35 is connected to the emitter of transistor Q13 and is also connected to the emitter of transistor Q12. The collector of transistor Q13 is connected to the gate of MOS transistor MOS2.

[0013] Further settings are: the model of the current detection amplifier U3 is SGM8197A2QMS8G / TR.

[0014] Further configuration is: the output clamp circuit includes a voltage regulator diode D7 and a diode D8, the cathode of the voltage regulator diode D7 is connected to the gate of the MOS transistor MOS2, the anode of the voltage regulator diode D7 is connected to the anode of the diode D8, and the cathode of the diode D8 is connected to the drain of the MOS transistor MOS2.

[0015] The utility model has the following beneficial effects:

[0016] This new device uses precise resistance-capacitance matching to control the switching rate of MOS transistors. It features a built-in fast short-circuit response mechanism and clamping technology to suppress transient voltages, ensuring stable and reliable circuit operation. This device not only meets stringent EMC standards but also enhances the intelligence and safety of automotive electrical systems, filling a market gap and possessing broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A circuit diagram of an embodiment. DETAILED DESCRIPTION

[0018] The present invention will be described in further detail below with reference to the accompanying drawings.

[0019] As attached Figure 1 As shown;

[0020] This embodiment discloses an intelligent high-side driver circuit with adjustable current slew rate for vehicle body domain control driving, comprising a current slew rate adjustable circuit, a short-circuit detection and fast response protection circuit connected to the current slew rate adjustable circuit, and an output clamping circuit;

[0021] The current slew rate adjustable circuit includes a resistor R31, a resistor R36, a resistor R37, a resistor R39, a resistor R40, a resistor R40, a resistor R43, a resistor R44, a resistor R46, a resistor R47, a capacitor C6, a capacitor C12, a transistor Q12, a transistor Q14, a transistor Q16, a MOS transistor MOS2, and a voltage stabilizing diode D5;

[0022] One end of resistor R31 is connected to the power supply VCC, and the other end of resistor R31 is connected to one end of resistor R44 and the base of transistor Q14. The other end of resistor R44 is connected to the emitter of transistor Q14 and one end of resistor R46, which also serves as an input terminal connected to the enable terminal of the MCU; the other end of resistor R46 is connected to one end of resistor R47 and the base of transistor Q16, and the other end of resistor R47 and the emitter of transistor Q16 are both grounded.

[0023] The collector of transistor Q14 is connected to one end of resistor R39. The other end of resistor R39 is connected to one end of resistor R36 and the base of transistor Q12. The other end of resistor R36 is connected to one end of resistor R37, one end of capacitor C12, the emitter of transistor Q12, the cathode of Zener diode D5, and the source of MOS transistor MOS2. The other end of resistor R37 is connected to the other end of capacitor C12 and is also connected to one end of resistor R43, one end of resistor R40, the anode of Zener diode D5, and the gate of MOS transistor MOS2. The other end of resistor R43 is connected to the collector of transistor Q16, and the other end of resistor R40 is connected to the collector of transistor Q12. A capacitor C6 is connected between the drain of MOS transistor MOS2 and ground, and this end also serves as an output end.

[0024] It should be noted that the input frequency and duty cycle are controlled by transistor Q16, and the resistor R40, resistor R43, transistor Q12 and capacitor C13 form a resistance charge and discharge combination, which realizes the control of the switching rate of the MOS tube MOS2 and the precise adjustment of the output current slew rate of the output terminal OUT2, ensuring that the set upper limit of 10A / ms is not exceeded under any operating conditions, thereby effectively reducing the electromagnetic radiation level.

[0025] When the enable terminal of the MCU inputs a high level, the transistor Q16 is turned on, and the capacitor C12 is charged to generate a voltage difference across the two ends. When the GS voltage of the MOS tube MOS2 is greater than the preset value, the output terminal OU2 is turned on to realize output.

[0026] Among them, the short circuit detection and fast response protection circuit includes resistor R32, resistor R33, resistor R34, resistor R35, resistor R38, resistor R41, resistor R42, resistor R45, capacitor C10, capacitor C11, capacitor C13, current detection amplifier U3, transistor Q13 and transistor Q15;

[0027] One end of resistor R32 is connected to one end of capacitor C11 and pin 8 of current detection amplifier U3, and this end is also connected to power supply battery VBAT2, and the other end of capacitor C11 is grounded; the other end of resistor R32 is connected to pin 7 of current detection amplifier U3 and the source of MOS transistor MOS2; pin 1 of current detection amplifier U3 is connected to one end of resistor R42 and one end of resistor R33, and this end is also connected to power supply VCC; capacitor C10 is connected between power supply VCC and ground; the other end of resistor R33 is connected to pin 5 of current detection amplifier U3 and one end of capacitor C13, and the other end of capacitor C13 and pin 4 of current detection amplifier U3 are both grounded; pin 2 of current detection amplifier U3 is connected to one end of resistor R34, and the other end of resistor R34 is connected to one end of resistor R38 and pin 3 of current detection amplifier U3, and the other end of resistor R38 is grounded;

[0028] The other end of resistor R42 is connected to pin 6 of current detection amplifier U3, one end of resistor R45, and the base of transistor Q15. The other end of resistor R45 and the emitter of transistor Q15 are both grounded. The collector of transistor Q15 is connected to one end of resistor R41. The other end of resistor R41 is connected to one end of resistor R35 and the base of transistor Q13. The other end of resistor R35 is connected to the emitter of transistor Q13 and is also connected to the emitter of transistor Q12. The collector of transistor Q13 is connected to the gate of MOS transistor MOS2.

[0029] It should be noted that the short-circuit detection and fast-response protection circuit is formed by combining the current detection amplifier U3, the resistor R34 and the resistor R38, which can quickly cut off the output when a short circuit is detected, preventing equipment damage and safety hazards, and improving the overall reliability of the system.

[0030] After the current detection amplifier U3 detects a large current, its pin 6 controls the output, transistor Q15 is turned on, transistor Q13 is turned on immediately, the two ends of capacitor C12 are short-circuited, and the voltage difference at the GS end of MOS tube MOS2 becomes 0, thereby turning off the output and performing a protection function.

[0031] Among them, the model of the current detection amplifier U3 is SGM8197A2QMS8G / TR.

[0032] The output clamp circuit includes a voltage regulator diode D7 and a diode D8. The cathode of the voltage regulator diode D7 is connected to the gate of the MOS transistor MOS2, the anode of the voltage regulator diode D7 is connected to the anode of the diode D8, and the cathode of the diode D8 is connected to the drain of the MOS transistor MOS2.

[0033] It should be noted that the output clamp circuit effectively suppresses the transient voltage spike generated when the inductive load is disconnected, protecting the MOS tube MOS2 and the connected circuit from damage.

[0034] When the output terminal OUT2 is suddenly disconnected due to the inductive load, a large negative voltage will be generated at the output terminal OUT2. At this time, the voltage regulator diode D7 and the diode D8 will be turned on by the negative voltage; the gate voltage of the MOS transistor MOS2 can maintain a positive voltage, thereby keeping the MOS transistor MOS2 in the on state and maintaining the output terminal OUT2. The voltage of the output terminal OUT2 is input by the power supply battery VBAT2 and becomes a positive voltage.

[0035] This specific embodiment is merely an explanation of the present invention and is not a limitation of the present invention. After reading this specification, those skilled in the art may make non-creative modifications to the present embodiment as needed. However, as long as they are within the scope of the claims of the present invention, they are protected by patent law.

Claims

1. An intelligent high-side driver circuit with adjustable current slew rate for vehicle body domain control, characterized by: It includes a current slew rate adjustable circuit, a short circuit detection and fast response protection circuit and an output clamping circuit connected to the current slew rate adjustable circuit; The current slew rate adjustable circuit includes a resistor R31, a resistor R36, a resistor R37, a resistor R39, a resistor R40, a resistor R43, a resistor R44, a resistor R46, a resistor R47, a capacitor C6, a capacitor C12, a transistor Q12, a transistor Q14, a transistor Q16, a MOS transistor MOS2 and a voltage stabilizing diode D5; One end of resistor R31 is connected to the power supply VCC, and the other end of resistor R31 is connected to one end of resistor R44 and the base of transistor Q14. The other end of resistor R44 is connected to the emitter of transistor Q14 and one end of resistor R46, which also serves as an input terminal connected to the enable terminal of the MCU; the other end of resistor R46 is connected to one end of resistor R47 and the base of transistor Q16, and the other end of resistor R47 and the emitter of transistor Q16 are both grounded. The collector of transistor Q14 is connected to one end of resistor R39. The other end of resistor R39 is connected to one end of resistor R36 and the base of transistor Q12. The other end of resistor R36 is connected to one end of resistor R37, one end of capacitor C12, the emitter of transistor Q12, the cathode of Zener diode D5, and the source of MOS transistor MOS2. The other end of resistor R37 is connected to the other end of capacitor C12 and is also connected to one end of resistor R43, one end of resistor R40, the anode of Zener diode D5, and the gate of MOS transistor MOS2. The other end of resistor R43 is connected to the collector of transistor Q16, and the other end of resistor R40 is connected to the collector of transistor Q12. A capacitor C6 is connected between the drain of MOS transistor MOS2 and ground, and this end also serves as an output end.

2. The intelligent high-side driver circuit with adjustable vehicle body domain control drive current slew rate according to claim 1, characterized in that: The short circuit detection and fast response protection circuit includes a resistor R32, a resistor R33, a resistor R34, a resistor R35, a resistor R38, a resistor R41, a resistor R42, a resistor R45, a capacitor C10, a capacitor C11, a capacitor C13, a current detection amplifier U3, a transistor Q13 and a transistor Q15; One end of resistor R32 is connected to one end of capacitor C11 and pin 8 of current detection amplifier U3, and this end is also connected to power supply battery VBAT2, and the other end of capacitor C11 is grounded; the other end of resistor R32 is connected to pin 7 of current detection amplifier U3 and the source of MOS transistor MOS2; pin 1 of current detection amplifier U3 is connected to one end of resistor R42 and one end of resistor R33, and this end is also connected to power supply VCC; capacitor C10 is connected between power supply VCC and ground; the other end of resistor R33 is connected to pin 5 of current detection amplifier U3 and one end of capacitor C13, and the other end of capacitor C13 and pin 4 of current detection amplifier U3 are both grounded; pin 2 of current detection amplifier U3 is connected to one end of resistor R34, and the other end of resistor R34 is connected to one end of resistor R38 and pin 3 of current detection amplifier U3, and the other end of resistor R38 is grounded; The other end of resistor R42 is connected to pin 6 of current detection amplifier U3, one end of resistor R45, and the base of transistor Q15. The other end of resistor R45 and the emitter of transistor Q15 are both grounded. The collector of transistor Q15 is connected to one end of resistor R41. The other end of resistor R41 is connected to one end of resistor R35 and the base of transistor Q13. The other end of resistor R35 is connected to the emitter of transistor Q13 and is also connected to the emitter of transistor Q12. The collector of transistor Q13 is connected to the gate of MOS transistor MOS2.

3. The intelligent high-side driver circuit with adjustable vehicle body domain control drive current slew rate according to claim 2, characterized in that: The model of the current detection amplifier U3 is SGM8197A2QMS8G / TR.

4. The intelligent high-side driver circuit with adjustable vehicle body domain control drive current slew rate according to claim 1, characterized in that: The output clamp circuit includes a voltage regulator diode D7 and a diode D8. The cathode of the voltage regulator diode D7 is connected to the gate of the MOS transistor MOS2, the anode of the voltage regulator diode D7 is connected to the anode of the diode D8, and the cathode of the diode D8 is connected to the drain of the MOS transistor MOS2.

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