Integrated data transmission seamless fusion circuit

Abstract

The utility model discloses an integrated data transmission seamless fusion circuit, which relates to the technical field of electronic circuits, and comprises a public module, a signal receiving module and a signal sending module, the public module comprises a K line end connected with slave equipment, the signal receiving module comprises a signal receiving end connected with master equipment, and the signal sending module comprises a signal receiving end connected with slave equipment. The signal sending module comprises a signal sending end connected with a main device. The signal receiving module and the signal sending module are both connected with the public module, the slave device sends a communication signal to the master device through the public module and the signal sending module, or the slave device receives the communication signal sent by the master device through the public module and the signal receiving module. The circuit can realize single-channel signal receiving and transmitting of slave equipment, effectively saves the circuit cost and reduces the potential fault risk.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic circuits, in particular to an integrated data transmission seamless fusion circuit. Background Art

[0002] In today's rapidly developing world of intelligent and communication technologies, efficient and stable data transmission has become a core driver of technological advancement and industry applications. With the widespread adoption of technologies like the Internet of Things, artificial intelligence, and big data, the requirements for data transmission speed, quality, and cost-effectiveness are increasing. This makes optimizing data transmission mechanisms a crucial and urgent issue.

[0003] Traditionally, two-wire communication technology, as the cornerstone of the communications field, has always held a dominant position. Two-wire communication enables bidirectional data transmission through independent transmit (TX) and receive (RX) ports. While this design ensures basic data transmission requirements, it also introduces a series of new challenges. In particular, the need to equip each port with corresponding anti-static and anti-interference devices not only increases system complexity but also significantly increases overall design costs. Furthermore, with the increasing trend towards miniaturization and integration of devices, effectively arranging these components within a limited space has become a major challenge in the design process. Furthermore, existing communication circuits also present problems such as the susceptibility of slave device ports to static damage and the mutual interference between the signal receiving and signal transmitting ports connected to the master device. Utility Model Content

[0004] In response to the above problems and technical requirements, the applicant has proposed an integrated data transmission seamless fusion circuit.

[0005] The technical solution of the utility model is as follows:

[0006] An integrated data transmission seamless fusion circuit includes a common module, a signal receiving module, and a signal sending module. The common module includes a K-line terminal connected to a slave device, the signal receiving module includes a signal receiving terminal connected to a master device, and the signal sending module includes a signal sending terminal connected to the master device.

[0007] The signal receiving module and the signal sending module are both connected to the common module. The slave device sends a communication signal to the master device through the common module and the signal sending module, or the slave device receives a communication signal sent by the master device through the common module and the signal receiving module.

[0008] A further technical solution is that the signal receiving module includes a resistor R279, a resistor R280, a resistor R281, a resistor R282, a switch device Q209, a switch device Q214 and a diode D217, wherein:

[0009] The signal receiving end is connected to one end of the resistor R281 and the second electrode end of the switch device Q214 through the resistor R282, and the other end of the resistor R281 and the first electrode end of the switch device Q214 are connected to the power supply voltage;

[0010] The third electrode terminal of the switching device Q214 is connected to the anode of the diode D217 through the resistor R279, the cathode of the diode D217 is connected to the second electrode terminal of the switching device Q209, and the cathode of the diode D217 is grounded through the resistor R280, and the third electrode terminal of the switching device Q209 is connected to the common module.

[0011] A further technical solution is that the signal receiving module further includes a resistor R283 and a switch device Q210, wherein:

[0012] One end of the resistor R283 is connected to the first electrode end of the switching device Q209 and the second electrode end of the switching device Q210 , and the other end of the resistor R283 is connected to the first electrode end of the switching device Q210 and is grounded.

[0013] A further technical solution is that the signal receiving module further includes a resistor R277, a resistor R278, a switch device Q211 and a diode D216, wherein:

[0014] The anode of the diode D216 is connected to the third electrode terminal of the switching device Q209, and the cathode of the diode D216 is connected to the second electrode terminal of the switching device Q211 and one end of the resistor R278 through the resistor R277;

[0015] The other end of the resistor R278 and the first electrode of the switch device Q211 are grounded, and the third electrode of the switch device Q211 is connected to the cathode of the diode D217 and the second electrode of the switch device Q209.

[0016] A further technical solution is that the signal sending module includes a diode D214, a diode D215, a resistor R271, a resistor R272 and a switch device Q212, wherein:

[0017] The common module is connected to the anode of the diode D214, the cathode of the diode D214 is connected to one end of the resistor R271, the other end of the resistor R271 is connected to the second electrode end of the switching device Q212, and is connected to the first electrode end of the switching device Q212 through the resistor R272;

[0018] A first electrode terminal of the switching device Q212 is grounded, and a third electrode terminal of the switching device Q212 is connected to the cathode of the diode D215.

[0019] A further technical solution is that the signal sending module further includes a resistor R273, a resistor R274, a resistor R275, a resistor R276 and a switch device Q213, wherein:

[0020] The anode of the diode D215 is connected to one end of the resistor R274 and the second electrode end of the switching device Q213 through the resistor R273. The other end of the resistor R274 is connected to the first electrode end of the switching device Q213 and is connected to the power supply voltage. The third electrode end of the switching device Q213 is connected to the signal sending end through the resistor R276 and is grounded through the resistor R275.

[0021] A further technical solution is that the common module includes a resistor R270, a diode D213 and a resistor R262, wherein:

[0022] The cathode of the diode D213 is connected to the anode of the diode D214 . The anode of the diode D213 is connected to the power supply voltage through the resistor R270 . The anode of the diode D214 is connected to the K-line terminal through the resistor R262 .

[0023] A further technical solution is that the common module further includes a fuse F201 and a bidirectional TVS diode D218, the K line end is connected to one end of the bidirectional TVS diode D218 through the fuse F201, and the other end of the bidirectional TVS diode D218 is grounded.

[0024] A further technical solution is that an anti-interference module is provided between the signal receiving module and the signal sending module, and the anti-interference module includes a diode D219 and a resistor R284, wherein:

[0025] The anode of the diode D219 is connected to the second electrode terminal of the switch device Q213, and the cathode of the diode D219 is connected to the signal receiving terminal through the resistor R284.

[0026] A further technical solution is that the switching device Q209 , the switching device Q210 , the switching device Q211 , the switching device Q212 , the switching device Q213 and the switching device Q214 are triodes.

[0027] The beneficial technical effects of the utility model are:

[0028] (1) The signal receiving end and the signal sending end connected to the slave device are integrated into a K-line end to realize single-channel signal reception and transmission of the slave device, which can significantly simplify circuit wiring, reduce the number of connection points, greatly reduce wiring complexity, effectively save circuit costs and reduce potential failure risks.

[0029] (2) An anti-static circuit is set at the K-line end to significantly enhance the anti-static performance during communication between master and slave devices.

[0030] (3) An anti-interference module is provided between the signal sending module and the signal receiving module, which effectively prevents the signal sending end and the signal receiving end connected to the main device from interfering with each other during normal operation, thereby further improving the reliability and security of communication. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a circuit principle diagram of an embodiment of the integrated data transmission seamless fusion circuit provided by the utility model.

[0032] Figure 2 This is a circuit principle diagram of an integrated data transmission seamless fusion circuit that only shows a common module and a signal receiving module in one embodiment of the present utility model.

[0033] Figure 3 This is a circuit principle diagram of an integrated data transmission seamless fusion circuit that only shows a common module and a signal sending module in one embodiment of the present utility model.

[0034] Description of reference numerals: 10 - common module, 20 - signal receiving module, 30 - signal sending module, 40 - anti-interference module. DETAILED DESCRIPTION

[0035] The specific implementation of the present utility model will be further described below with reference to the accompanying drawings.

[0036] The utility model provides an integrated data transmission seamless fusion circuit, including a common module 10, a signal receiving module 20 and a signal sending module 30, wherein the common module 10 includes a K-line terminal connected to a slave device, the signal receiving module 20 includes a signal receiving terminal connected to a master device, and the signal sending module 30 includes a signal sending terminal connected to the master device;

[0037] The signal receiving module 20 and the signal sending module 30 are both connected to the common module 10 , and the slave device sends a communication signal to the master device through the common module 10 and the signal sending module 30 , or the slave device receives a communication signal sent by the master device through the common module 10 and the signal receiving module 20 .

[0038] Figure 1 A schematic diagram of an embodiment of an integrated seamless data transmission fusion circuit is shown. As shown, this application integrates the dual signal ports connected to the slave device in the prior art into the K-line terminal, enabling single-channel signal transmission and reception for the slave device. This significantly reduces wiring complexity, effectively saves circuit costs, and reduces potential failure risks. The specific principles for achieving single-channel signal transmission and reception for the slave device using this integrated seamless data transmission fusion circuit can be found in the following description.

[0039] Specifically, the signal receiving module 20 includes a resistor R279, a resistor R280, a resistor R281, a resistor R282, a resistor R283, a switch device Q209, a switch device Q210, a switch device Q214, and a diode D217. The signal receiving end is connected to one end of the resistor R281 and the second electrode end of the switch device Q214 via the resistor R282. The other end of the resistor R281 and the first electrode end of the switch device Q214 are connected to the power supply voltage. The third electrode end of the switch device Q214 is connected to the anode of the diode D217 via the resistor R279. The cathode of the diode D217 is connected to the second electrode end of the switch device Q209, and the cathode of the diode D217 is grounded via the resistor R280. The third electrode end of the switch device Q209 is connected to the common module 10. One end of the resistor R283 is connected to the first electrode end of the switching device Q209 and the second electrode end of the switching device Q210 , and the other end of the resistor R283 is connected to the first electrode end of the switching device Q210 and is grounded.

[0040] In this embodiment, the power supply voltage is 5V, and the switching devices Q209, Q210, and Q214 are all triodes. Specifically, the switching devices Q209 and Q210 are NPN triodes, and the switching device Q214 is a PNP triode. In a specific implementation, the switching devices Q209, Q210, and Q214 may also be other power devices with switching functions. For a triode, the first electrode terminal is the emitter terminal, the second electrode terminal is the base terminal, and the third electrode terminal is the collector terminal.

[0041] The common module includes a resistor R270, a diode D213, a resistor R262, a fuse F201, and a bidirectional TVS diode D218. The cathode of the diode D213 is connected to the third electrode terminal of the switching device Q209, the anode of the diode D213 is connected to the power supply voltage via the resistor R270, one end of the resistor R262 is connected to the anode of the diode D216 and the cathode of the diode D213, and the other end of the resistor R262 is connected to the K-line terminal. The K-line terminal is connected to one end of the bidirectional TVS diode D218 via the fuse F201, and the other end of the bidirectional TVS diode D218 is grounded. The fuse F201 and bidirectional TVS diode D218 provide electrostatic protection. When static electricity is present in the circuit, the fuse F201 provides overload protection, and the bidirectional TVS diode D218 is used to clamp the voltage to protect the circuit components from damage.

[0042] For ease of illustration and explanation, Figure 2To illustrate only the circuit schematic diagram of the common module 10 and the signal receiving module 20, the following is a schematic diagram of the common module 10 and the signal receiving module 20. Figure 2 The specific principle of the slave device receiving the communication signal sent by the master device through the common module 10 and the signal receiving module 20 is described below:

[0043] When the slave device receives the communication signal sent by the master device through the common module 10 and the signal receiving module 20, the master device sends a TX signal from the signal receiving end to the K-line end. When the TX signal is at a low level, the 5V power supply voltage is divided by resistors R282 and R281, and the resistance value of resistor R282 is set to a small value, so that the base end of transistor Q214 is at a low voltage. At this time, the 5V power supply voltage passes through transistor Q214, resistor R279 and diode D217 in sequence, and is then divided by resistor R280 and loaded to the base end of transistor Q209, causing transistor Q209 to turn on. The voltage at the end of resistor R262 connected to the collector end of transistor Q209 is pulled down, and the resistance value of resistor R262 is also set to a small value, so that the voltage difference between its two ends is very small. At this time, the end of resistor R262 connected to the K-line end is at a low voltage, that is, the K-line end receives a low-level signal corresponding to the TX signal.

[0044] When the TX signal is high, the 5V power supply voltage is divided by resistors R282 and R281 and applied to the base of transistor Q214, causing the base of transistor Q214 to reach a high voltage. Transistor Q214 is cut off, and no current or voltage flows through resistor R279 and diode D217. The base of transistor Q209 reaches a low voltage, and transistor Q209 is cut off. The 5V high voltage is applied to one end of resistor R262 through resistor R270 and diode D213. At this point, the end of resistor R262 connected to the K-line terminal reaches a high voltage, indicating that the K-line terminal receives the high-level signal corresponding to the TX signal. In summary, when the master device sends a TX signal from the signal receiving end to the K-line terminal, the K-line terminal receives the corresponding TX signal at a high or low level, indicating that the K-line terminal can realize the signal receiving function. Transistor Q210 in signal receiving module 20 is used to provide overcurrent protection. If an abnormality occurs and excessive current flows through resistor R283, a large voltage difference will be generated between the base and emitter terminals of transistor Q210. When the voltage difference is greater than the turn-on voltage of transistor Q210, transistor Q210 turns on, lowering the voltage between the base and emitter terminals of transistor Q209, causing transistor Q209 to turn off, thereby preventing transistor Q209 from being damaged by excessive current.

[0045] Furthermore, the signal receiving module 20 also includes an overvoltage protection circuit consisting of a resistor R277, a resistor R278, a switching device Q211 and a diode D216, wherein the anode of the diode D216 is connected to the third electrode end of the switching device Q209, the cathode of the diode D216 is connected to the second electrode end of the switching device Q211 and one end of the resistor R278 through the resistor R277, the other end of the resistor R278 and the first electrode end of the switching device Q211 are grounded, and the third electrode end of the switching device Q211 is connected to the cathode of the diode D217 and the second electrode end of the switching device Q209.

[0046] like Figure 1 and Figure 2 As shown, the switching device Q211 in this embodiment utilizes an NPN transistor. The definitions of its first, second, and third electrode terminals are the same as those described above and are not further elaborated here. When an abnormal overvoltage input occurs at the K-line terminal, the voltage divider across resistor R278, i.e., the voltage difference between the base and emitter terminals of transistor Q211, exceeds the turn-on voltage of transistor Q211, turning on transistor Q211 and lowering the base voltage of transistor Q209, turning off transistor Q209. At this point, the TX signal cannot be transmitted from the signal receiving end to the K-line terminal, thus achieving overvoltage protection against signal anomalies.

[0047] Furthermore, the signal sending module 30 includes a diode D214, a diode D215, a resistor R271, a resistor R272, a resistor R273, a resistor R274, a resistor R275, a resistor R276, a switch device Q212 and a switch device Q213, wherein:

[0048] One end of the resistor R262 and the cathode of the diode D213 are connected to the anode of the diode D214. The cathode of the diode D214 is connected to one end of the resistor R271. The other end of the resistor R271 is connected to the second electrode of the switching device Q212 and to the first electrode of the switching device Q212 through the resistor R272. The first electrode of the switching device Q212 is grounded, and the third electrode of the switching device Q212 is connected to the cathode of the diode D215. The anode of the diode D215 is connected to one end of the resistor R274 and the second electrode of the switching device Q213 through the resistor R273. The other end of the resistor R274 is connected to the first electrode of the switching device Q213 and is connected to the power supply voltage. The third electrode of the switching device Q213 is connected to the signal transmitting terminal through the resistor R276 and is grounded through the resistor R275.

[0049] Specifically, the switching device Q212 described in this embodiment is an NPN transistor, and the switching device Q213 is a PNP transistor. The definitions of the first electrode terminal, the second electrode terminal and the third electrode terminal of the switching device Q212 and the switching device Q213 are the same as above and are not repeated here.

[0050] For ease of illustration and explanation, Figure 3 To illustrate only the circuit principle diagram of the common module 10 and the signal sending module 30, the following is combined with Figure 3 The specific principle of the slave device sending a communication signal to the master device through the common module 10 and the signal sending module 30 is described below:

[0051] When the slave device sends a communication signal to the master device via the common module 10 and the signal transmission module 30, the slave device sends an RX signal from the K-line terminal to the master device. When the K-line terminal is at a low level, due to the small resistance of resistor R262, the voltage across it is also low. The voltage is divided by resistors R271 and R272 after passing through diode D214. The voltage across resistor R272 is low, and the voltage difference between the base and emitter terminals of transistor Q212 is less than the trigger conduction level, causing transistor Q212 to be turned off. No current flows through diode D215 and resistor R273, and no current flows through resistor R274. There is no voltage difference between the base and emitter terminals of transistor Q213, and transistor Q213 is turned off. At this time, the signal transmission terminal sends a low-level RX signal to the master device.

[0052] When the K-line signal is high, a high voltage is applied across resistor R262. This voltage is then divided by resistors R271 and R272 after passing through diode D214. The voltage across resistor R272 is applied to the base and emitter terminals of transistor Q212. The voltage difference between the base and emitter terminals of transistor Q212 exceeds the conduction level, turning on transistor Q212. At this point, current flows through diodes D215, resistors R273, and resistor R274. The voltage across resistor R274 is applied to the base and emitter terminals of transistor Q213. The voltage difference between the base and emitter terminals of transistor Q213 exceeds the conduction level, turning on transistor Q213. The 5V power supply voltage is then divided by resistors R275 and R276 through transistor Q213. The resistance of resistor R275 is set to be much greater than that of resistor R276, causing the signal transmitter to send a high-level RX signal to the master device. In summary, when the slave device sends an RX signal from the K-line end to the master device, the master device can receive the corresponding RX signal of high level or low level from the signal sending end, that is, the K-line end can realize the signal sending function.

[0053] Furthermore, if Figure 1 As shown, an anti-interference module 40 is provided between the signal receiving module 20 and the signal sending module 30. The anti-interference module 40 includes a diode D219 and a resistor R284.

[0054] The anode of the diode D219 is connected to the second electrode terminal of the switch device Q213, and the cathode of the diode D219 is connected to the signal receiving terminal through the resistor R284.

[0055] Specifically, when the master device sends a low-level TX signal to the signal receiving end, the base voltage of transistor Q213 is pulled down by diode D219 and resistor R284, turning on transistor Q213. The 5V power supply voltage passes through transistor Q213 and is divided by resistors R275 and 276 before being applied to the signal transmitting end. This ensures that when the master device sends a low-level TX signal to the signal receiving end, the signal transmitting end always maintains a high voltage. When the master device sends a high-level TX signal to the signal receiving end, diode D219 is reverse biased, and the voltage at the signal receiving end does not affect the base voltage of transistor Q213. However, as can be seen from the above description, when the K-line terminal is at a high voltage, the signal transmitting end also has a high voltage. Therefore, no matter whether the signal receiving end receives a high-level TX signal or a low-level TX signal, the voltage of the signal sending end is not affected by the TX signal and always remains at a high voltage. At this time, the K-line end can normally receive the TX signal sent by the main device, effectively preventing the signal sending end and the signal receiving end from interfering with each other during normal operation, and further improving the reliability and security of communication.

[0056] The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiment. It is understood that other improvements and variations directly derived or imagined by those skilled in the art without departing from the spirit and concept of the present invention should be considered to be included in the scope of protection of the present invention.

Claims

1. An integrated data transmission seamless fusion circuit, characterized in that: It includes a common module, a signal receiving module and a signal sending module, wherein the common module includes a K-line terminal connected to the slave device, the signal receiving module includes a signal receiving terminal connected to the master device, and the signal sending module includes a signal sending terminal connected to the master device; The signal receiving module and the signal sending module are both connected to the common module, and the slave device sends a communication signal to the master device through the common module and the signal sending module, or the slave device receives a communication signal sent by the master device through the common module and the signal receiving module.

2. The integrated data transmission seamless fusion circuit according to claim 1, characterized in that: The signal receiving module includes a resistor R279, a resistor R280, a resistor R281, a resistor R282, a switch device Q209, a switch device Q214 and a diode D217, wherein: The signal receiving end is connected to one end of the resistor R281 and the second electrode end of the switch device Q214 through the resistor R282, and the other end of the resistor R281 and the first electrode end of the switch device Q214 are connected to the power supply voltage; The third electrode terminal of the switching device Q214 is connected to the anode of the diode D217 through the resistor R279, the cathode of the diode D217 is connected to the second electrode terminal of the switching device Q209, and the cathode of the diode D217 is grounded through the resistor R280, and the third electrode terminal of the switching device Q209 is connected to the common module.

3. The integrated data transmission seamless fusion circuit according to claim 2, characterized in that: The signal receiving module further includes a resistor R283 and a switch device Q210, wherein: One end of the resistor R283 is connected to the first electrode end of the switching device Q209 and the second electrode end of the switching device Q210 , and the other end of the resistor R283 is connected to the first electrode end of the switching device Q210 and is grounded.

4. The integrated data transmission seamless fusion circuit according to claim 3, characterized in that: The signal receiving module further includes a resistor R277, a resistor R278, a switch device Q211 and a diode D216, wherein: The anode of the diode D216 is connected to the third electrode terminal of the switching device Q209, and the cathode of the diode D216 is connected to the second electrode terminal of the switching device Q211 and one end of the resistor R278 through the resistor R277; The other end of the resistor R278 and the first electrode of the switch device Q211 are grounded, and the third electrode of the switch device Q211 is connected to the cathode of the diode D217 and the second electrode of the switch device Q209.

5. The integrated data transmission seamless fusion circuit according to claim 4, characterized in that: The signal sending module includes a diode D214, a diode D215, a resistor R271, a resistor R272 and a switch device Q212, wherein: The common module is connected to the anode of the diode D214, the cathode of the diode D214 is connected to one end of the resistor R271, the other end of the resistor R271 is connected to the second electrode end of the switching device Q212, and is connected to the first electrode end of the switching device Q212 through the resistor R272; A first electrode terminal of the switching device Q212 is grounded, and a third electrode terminal of the switching device Q212 is connected to the cathode of the diode D215.

6. The integrated data transmission seamless fusion circuit according to claim 5, characterized in that: The signal sending module further includes a resistor R273, a resistor R274, a resistor R275, a resistor R276 and a switch device Q213, wherein: The anode of the diode D215 is connected to one end of the resistor R274 and the second electrode end of the switching device Q213 through the resistor R273. The other end of the resistor R274 is connected to the first electrode end of the switching device Q213 and is connected to the power supply voltage. The third electrode end of the switching device Q213 is connected to the signal sending end through the resistor R276 and is grounded through the resistor R275.

7. The integrated data transmission seamless fusion circuit according to claim 5, characterized in that: The common module includes a resistor R270, a diode D213 and a resistor R262, wherein: The cathode of the diode D213 is connected to the anode of the diode D214 . The anode of the diode D213 is connected to the power supply voltage through the resistor R270 . The anode of the diode D214 is connected to the K-line terminal through the resistor R262 .

8. The integrated data transmission seamless fusion circuit according to claim 7, characterized in that: The common module further includes a fuse F201 and a bidirectional TVS diode D218. The K-line end is connected to one end of the bidirectional TVS diode D218 through the fuse F201, and the other end of the bidirectional TVS diode D218 is grounded.

9. The integrated data transmission seamless fusion circuit according to claim 6, characterized in that: An anti-interference module is provided between the signal receiving module and the signal sending module. The anti-interference module includes a diode D219 and a resistor R284. The anode of the diode D219 is connected to the second electrode terminal of the switch device Q213, and the cathode of the diode D219 is connected to the signal receiving terminal through the resistor R284.

10. The integrated data transmission seamless fusion circuit according to claim 6, characterized in that: The switching device Q209 , the switching device Q210 , the switching device Q211 , the switching device Q212 , the switching device Q213 and the switching device Q214 are triodes.

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