Circuit device for comparing dissipation power of different MOS (Metal Oxide Semiconductor) tubes

Abstract

The utility model discloses a circuit device for comparing dissipation power of different MOS (Metal Oxide Semiconductor) tubes. The device comprises an MOS tube driving operation part and a surface temperature rise thermal imaging acquisition part. The MOS tube driving operation part comprises a power supply and a circuit board, the test MOS tube is arranged on the circuit board, and the circuit board is electrically connected with the power supply; and the surface temperature rise thermal imaging acquisition part comprises a thermal imaging instrument, and the thermal imaging instrument is used for measuring and testing the surface temperature of the MOS tube shell. According to the utility model, by inputting driving signals with different frequencies, the tested MOS tube is in a working state and the temperature change of the housing is recorded, and by comparing the temperature rise values of the housings of different MOS tubes under the same driving frequency, the optimal MOS tube under the required driving frequency is selected.

Description

Technical Field

[0001] The utility model relates to the technical field of automobile electronic circuits, in particular to a circuit device for comparing the dissipated power of different MOS tubes. Background Art

[0002] As a key component in automotive electronic systems, MOS tubes play a vital role in the performance and stability of the entire system. The following points should be considered when selecting:

[0003] 1. Power and voltage requirements: Select MOS transistors with appropriate power and voltage levels based on system requirements to ensure they can operate stably within the required voltage range. 2. On-resistance: Consider the on-resistance of the MOS transistor and select MOS transistors with low on-resistance to improve efficiency and reduce system energy consumption. 3. Switching speed: Select MOS transistors with appropriate switching speeds to ensure the circuit's response speed and efficiency. Fast switching speeds can improve the system's dynamic performance. 4. Thermal characteristics: Consider the thermal characteristics of the MOS transistor to ensure it can effectively dissipate heat to avoid overheating and system failure. Stable thermal characteristics help improve system reliability.

[0004] The above points are often compared with parameters in MOS tube manuals during early stage selection. However, different manufacturers' MOS tubes have different testing methods for certain parameters, so the comparison data is not practical and provides little guidance. This can cause confusion for R&D personnel during early stage selection, and inadequate early evaluation of MOS tubes may negatively impact product development progress. Utility Model Content

[0005] In order to solve the problems existing in the background technology, the utility model provides a method for comparing the dissipated power of different MOS tubes. It solves the problem of relying on parameter comparison in MOS tube manuals to determine which manufacturer's MOS tube to select, and uses actual measurement of temperature rise changes to confirm the MOS tube suitable for the design application.

[0006] The technical solution of the present utility model is achieved as follows:

[0007] The utility model comprises two parts: a MOS tube driving operation part and a surface temperature rise thermal imaging acquisition part;

[0008] The MOS tube driving operation part includes a power supply and a circuit board. The test MOS tube is arranged on the circuit board. The circuit board and the power supply are electrically connected. The surface temperature rise thermal imaging acquisition part includes a thermal imaging instrument. The thermal imaging instrument is used to measure the surface temperature of the test MOS tube shell.

[0009] The circuit board includes a MOS transistor Q18, a resistor RG, and a resistor RLOAD. The PWM drive signal M1_DRV_PWM is connected to the gate of the MOS transistor Q18 via the resistor RG. The source of the MOS transistor Q18 is grounded, and the drain is connected to the positive electrode of the DC power supply V1 via the resistor RLOAD. The negative electrode of the power supply V1 is grounded.

[0010] The gate resistance of the resistor RG is 15 times the resistance of the load resistor RLOAD.

[0011] The thermal imaging instrument is directed to the surface of the test MOS tube housing to record changes in housing temperature over time in real time.

[0012] Beneficial effects of the utility model:

[0013] This utility model uses drive signals of different frequencies to put the MOS tube under test into corresponding operating states and record the temperature changes of its shell. This utility model can be used to compare the shell temperature rise values ​​of different MOS tubes at the same drive frequency, thereby selecting the optimal MOS tube at the required drive frequency, providing an important basis for the selection of MOS tubes in early circuit design. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is the principle diagram of the circuit of the utility model;

[0015] Figure 2 This is a layout diagram of the circuit device of the utility model;

[0016] Figure 3 This is a temperature curve diagram of two MOS tubes at 20KHz according to an embodiment of the present invention.

[0017] In the figure: thermal imaging instrument (3), test MOS tube (4), power supply (5), circuit board (6). DETAILED DESCRIPTION

[0018] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0019] like Figure 2 As shown, the circuit device includes two parts: a MOS tube driving operation part and a surface temperature rise thermal imaging acquisition part; the MOS tube driving operation part includes a power supply 5 and a circuit board 6, the test MOS tube 4 to be tested is arranged on the circuit board 6, and the circuit board 6 and the power supply 5 are electrically connected; the test MOS tube 4 is placed on the circuit board 6, and the power supply 5 supplies power to the MOS tube driving part.

[0020] The surface temperature rise thermal imaging acquisition part includes a thermal imaging instrument 3 , which is used to measure the surface temperature of the shell of the test MOS tube 4 .

[0021] like Figure 1 As shown, the circuit board 6 of the circuit itself includes a MOS transistor Q18, a resistor RG, and a resistor RLOAD. The PWM drive signal M1_DRV_PWM is connected to the gate of pin 1 of the MOS transistor Q18 via resistor RG. The source of pin 3 of the MOS transistor Q18 is grounded, and the drain of pin 2 is connected to the positive terminal of the DC power supply V1 via resistor RLOAD. The negative terminal of the power supply V1 is grounded. The power supply V1 is also referred to as the power supply 5.

[0022] The gate resistance of resistor RG is 15 times the resistance of load resistor RLOAD.

[0023] The thermal imaging instrument 3 is facing the surface of the shell of the test MOS tube 4, and is used to record the change of the shell temperature over time in real time.

[0024] In the specific implementation, in the MOS tube driving operation part, the gate resistance of the resistor RG is 3R, the resistance of the load resistor RLOAD is 0.2R, the battery voltage V1 is 12V, the driving frequency range is 0-20KHz, and the duty cycle is 50% of the PWM waveform.

[0025] The test steps of the present invention are as follows:

[0026] 1. Select two MOS transistors with the same package structure as test objects. The operating frequency of the MOS transistors is designed to be 20KHz.

[0027] 2. Solder one of the MOS tubes to be verified, No. 1, to the PCB circuit board 6.

[0028] The drive signal input includes the following sets of drive waveforms: DC high level, 1 kHz PWM waveform, 5 kHz PWM waveform, 10 kHz PWM waveform, and 20 kHz PWM waveform. The test interval is 15 minutes, and each test lasts for 5 minutes. Thermal imaging instrument 3 records the temperature rise of the housing of MOS tube No. 1 of each group over time.

[0029] 3. Remove MOS tube No. 1 and solder another MOS tube No. 2 to PCB circuit board 6.

[0030] The following drive waveforms were input to the drive signal: a DC high level, a 1 kHz PWM waveform, a 5 kHz PWM waveform, a 10 kHz PWM waveform, and a 20 kHz PWM waveform. The test interval was 15 minutes, and each test lasted 5 minutes. The thermal imaging instrument 3 recorded the temperature rise of the housing of each MOS tube No. 2 over time.

[0031] 4. If Figure 3As shown in the figure, according to the designed 20KHz PWM drive frequency, by comparing the shell temperature rise data of MOS tube No. 1 and No. 2, it can be seen that the temperature rise value of MOS tube No. 2 is smaller, and the MOS tube with the smaller temperature rise value is selected as the best MOS tube.

Claims

1. A circuit device for comparing the power dissipation of different MOS transistors, characterized by: The invention comprises two parts: a MOS tube driving operation part and a surface temperature rise thermal imaging acquisition part; the MOS tube driving operation part comprises a power supply (5) and a circuit board (6); the test MOS tube (4) is arranged on the circuit board (6); the circuit board (6) and the power supply (5) are electrically connected; the surface temperature rise thermal imaging acquisition part comprises a thermal imaging instrument (3); the thermal imaging instrument (3) is used to measure the surface temperature of the outer shell of the test MOS tube (4); The circuit board (6) includes a MOS tube Q18, a resistor RG and a resistor RLOAD. The PWM drive signal M1_DRV_PWM is connected to the gate of the MOS tube Q18 via the resistor RG. The source of the MOS tube Q18 is grounded, and the drain is connected to the positive electrode of the DC power supply V1 via the resistor RLOAD. The negative electrode of the power supply V1 is grounded.

2. The circuit device for comparing power dissipation of different MOS transistors according to claim 1, characterized in that: The gate resistance of the resistor RG is 15 times the resistance of the load resistor RLOAD.

3. The circuit device for comparing power dissipation of different MOS transistors according to claim 1, characterized in that: The thermal imaging instrument (3) is facing the surface of the shell of the test MOS tube (4) and is used to record the change of the shell temperature over time in real time.

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