K-band high-power high-isolation two-path waveguide distributor / synthesizer

Abstract

The utility model discloses a K-band high-power high-isolation two-path waveguide distributor / synthesizer, which comprises an outer shell, a cavity arranged in the outer shell, a first waveguide tube cavity arranged in the outer shell and arranged at the bottom of the cavity, and two coaxial connectors arranged on the outer shell and connected with one side of the first waveguide tube cavity, the first microstrip probe is connected between the coaxial connector and the first waveguide tube cavity, the waveguide interface is arranged on the outer shell and connected with the other side of the first waveguide tube cavity, the second microstrip probe is connected with the first waveguide tube cavity and located on the same axis with the waveguide interface, and the power resistor is arranged at the rear end of the second microstrip probe. The inner cover is arranged in the cavity and is arranged at the upper parts of the first waveguide tube cavity, the first micro-strip probe and the second micro-strip probe; the upper cover plate covers the outer shell; the first waveguide tube cavity is T-shaped; the second microstrip probe and the waveguide interface coincide with the central axis of the T shape of the first waveguide tube cavity.

Description

Technical Field

[0001] The utility model relates to the technical field of waveguide distributors / synthesizers, in particular to a K-band high-power and high-isolation two-way waveguide distributor / synthesizer. Background Art

[0002] With the development of the communications industry, the demand for microwave components is increasing, and with the gradual improvement of system performance and application environment, the output capacity of a single solid-state device is limited, making it difficult to achieve a large power output and generally unable to meet the requirements of engineering applications. It is usually necessary to combine multiple solid-state devices through power synthesis technology to obtain a higher power output. Common synthesis methods include microstrip circuit synthesis networks, hybrid synthesis networks, and spatial power synthesis. Among them, microstrip circuit synthesis networks, such as the Chinese utility model "Patent Publication No. CN202004135U, Named K-Band High-Power Waveguide Power Synthesis Network", use waveguide-microstrip transitions, waveguide power dividers, n power amplifier functional modules, waveguide power synthesizers, and broadband waveguide bridges. The disadvantage of this technology is that a waveguide bridge needs to be added to the branch port to improve the isolation between channels.

[0003] Furthermore, hybrid synthesis networks, such as the one disclosed in "Patent Publication No. CN111952706A, entitled "A Compact Waveguide Hybrid Synthesis Network," integrate: a waveguide HT junction; a pair of magic tees symmetrically connected to the branch input ends of the waveguide HT junction; and two pairs of waveguide ET junctions symmetrically connected to the branch input ends of the magic tees. The disadvantages of this type of synthesizer are its complex structure, difficulty in processing, and high assembly requirements.

[0004] Finally, a spatial power combiner, such as the Chinese utility model patent CN213460037U, entitled "A Millimeter-Wave Radial Waveguide Spatial Power Combiner," comprises a cover and a mounting body arranged vertically and rotatable relative to each other. The mounting body defines a first waveguide cavity with an open top and a pin at its center. The sidewalls of the mounting body are provided with a plurality of first through-holes, and the cover body is provided with a plurality of vertical axial holes, some of which are closed at their tops and open at their bottoms. This type of radial combiner is generally suitable for use in chassis-based systems due to its bulk and the subsequent addition of heat sinks. Performance-wise, the branch-end standing wave and isolation are relatively poor.

[0005] Therefore, there is an urgent need to propose a simple, lightweight, high-power, high-isolation two-way K-band waveguide splitter / combiner. Utility Model Content

[0006] In view of the above problems, the purpose of this utility model is to provide a K-band high-power and high-isolation two-way waveguide splitter / combiner. The technical solution adopted by this utility model is as follows:

[0007] A K-band high-power, high-isolation two-way waveguide distributor / combiner comprises an outer shell, a cavity provided in the outer shell, a first waveguide cavity provided in the outer shell and positioned at the bottom of the cavity, two coaxial connectors provided on the outer shell and connected to one side of the first waveguide cavity, a first microstrip probe connected between the coaxial connectors and the first waveguide cavity, a waveguide interface provided on the outer shell and connected to the other side of the first waveguide cavity, a second microstrip probe connected to the first waveguide cavity and coaxially located with the waveguide interface, a power resistor provided at the rear end of the second microstrip probe, an inner cover provided in the cavity and positioned above the first waveguide cavity, the first microstrip probe, and the second microstrip probe, and an upper cover plate covering the outer shell; the first waveguide cavity is T-shaped; the first microstrip probe is respectively connected to both sides of the top of the T-shaped portion of the first waveguide cavity; the second microstrip probe and the waveguide interface coincide with the central axis of the T-shaped portion of the first waveguide cavity; and the first microstrip probe, the power resistor, and the second microstrip probe are printed on a circuit board.

[0008] Furthermore, a second waveguide cavity, a first microstrip probe mounting cavity and a second microstrip probe mounting cavity are provided at the bottom of the inner cover; the position of the second waveguide cavity coincides with the position of the first waveguide cavity; the position of the first microstrip probe mounting cavity coincides with the position of the first microstrip probe; and the position of the second microstrip probe mounting cavity coincides with the position of the second microstrip probe.

[0009] Furthermore, a plurality of positioning holes are provided at the bottom of the inner cover; a plurality of positioning posts are provided in the cavity; and the positioning posts correspond to the positioning holes one by one.

[0010] Furthermore, the first microstrip probe includes a first microstrip, a second microstrip and a third microstrip that are integrally formed and sequentially connected.

[0011] Furthermore, the second microstrip probe includes a fourth microstrip, a fifth microstrip, a sixth microstrip, a seventh microstrip and an eighth microstrip that are integrally formed and sequentially connected; the fourth microstrip is connected to a power resistor.

[0012] Compared with the prior art, the present invention has the following beneficial effects:

[0013] (1) The utility model sets a T-shaped second waveguide cavity and a first waveguide cavity, connects a coaxial connector and a waveguide interface, sets a conventional first microstrip probe between the coaxial connector and the first waveguide cavity, and sets a high thermal conductivity second microstrip probe on the first waveguide cavity to achieve high isolation distribution / synthesis of the K band (full frequency band).

[0014] (2) The present invention is designed based on an E-plane waveguide. It utilizes a matching probe to achieve the transition between the waveguide and the microstrip line. The coaxial connector can be replaced according to the usage and directly integrated with the coaxial connector. In addition, a probe (second microstrip probe) matching stage is added to the intermediate stage and connected to the power resistor, which not only improves the standing wave at the distribution end but also improves the isolation.

[0015] In summary, the utility model has the advantages of simple structure, lightweight, and reliable isolation, and has high practical value and promotion value in the field of waveguide distributor / combiner technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope of protection. For those skilled in the art, other relevant drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 It is a structural diagram of the present utility model.

[0018] Figure 2 This is a blasting diagram of the present utility model.

[0019] Figure 3 It is a top view of the outer shell of the utility model.

[0020] Figure 4 It is a three-dimensional diagram of the outer shell of the utility model.

[0021] Figure 5 It is a three-dimensional diagram of the inner cover of the present invention.

[0022] Figure 6 This is a schematic structural diagram of the first microstrip probe of the present invention.

[0023] Figure 7 This is a schematic structural diagram of the second microstrip probe of the present invention.

[0024] Figure 8 This is the HFSS 3D modeling diagram of the utility model.

[0025] Figure 9 This is the simulated electric field distribution diagram of the present utility model.

[0026] Figure 10 This is a test diagram of the port standing wave of the utility model.

[0027] Figure 11 This is a test diagram of the insertion loss of the utility model.

[0028] Figure 12 This is a test diagram of the isolation of the utility model.

[0029] In the above drawings, the component names corresponding to the reference numerals are as follows:

[0030] 1. Outer shell; 2. Cavity; 3. Inner cover; 4. Upper cover; 5. Coaxial connector; 6. Waveguide interface; 7. First microstrip probe; 8. First waveguide cavity; 9. Power resistor; 10. Second microstrip probe; 11. Positioning post; 31. Second waveguide cavity; 32. First microstrip probe mounting cavity; 33. Second microstrip probe mounting cavity; 34. Positioning hole; 71. First microstrip; 72. Second microstrip; 73. Third microstrip; 81. First conversion cavity; 101. Fourth microstrip; 102. Fifth microstrip; 103. Sixth microstrip; 104. Seventh microstrip; 105. Eighth microstrip. DETAILED DESCRIPTION

[0031] To make the purpose, technical solutions, and advantages of this application more clear, the present invention is further described below with reference to the accompanying drawings and examples. Implementation methods of this invention include, but are not limited to, the following examples. Based on the examples in this application, all other embodiments obtained by persons of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0032] Example

[0033] In this embodiment, the term "and / or" is merely a description of the association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can represent three situations: A exists alone, A and B exist at the same time, and B exists alone.

[0034] In the description and claims of this embodiment, the terms "first" and "second" are used to distinguish different objects rather than to describe a specific order of objects. For example, a first target object and a second target object are used to distinguish different objects rather than to describe a specific order of objects.

[0035] In the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be interpreted as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0036] In the description of the embodiments of this application, unless otherwise specified, "multiple" means two or more. For example, "multiple processing units" means two or more processing units; "multiple systems" means two or more systems.

[0037] like Figures 1 to 12 As shown, this embodiment provides a K-band high-power, high-isolation two-way waveguide splitter / combiner. The two-way splitter sections of this embodiment can use standard WR-42 waveguide ports or coaxial / microstrip ports, and the splitter output circuit uses conventional microstrip probes connected to coaxial connectors. Alternatively, the combiner end can use a standard WR-42 waveguide port or coaxial / microstrip ports. Furthermore, the intermediate matching circuit, located between the splitter and combiner, uses a high-thermal-conductivity ROGERS microstrip probe connected to the power resistor.

[0038] Specifically, the waveguide splitter / combiner of this embodiment includes an outer shell 1, a cavity 2 defined within the outer shell 1, a first waveguide cavity 8 defined within the outer shell 1 and positioned at the bottom of the cavity 2, two coaxial connectors 5 disposed on the outer shell 1 and connected to one side of the first waveguide cavity 8, a first microstrip probe 7 connected between the coaxial connectors 5 and the first waveguide cavity 8, a waveguide interface 6 disposed on the outer shell 1 and connected to the other side of the first waveguide cavity 8, a second microstrip probe 10 connected to the first waveguide cavity 8 and coaxial with the waveguide interface 6, a power resistor 9 disposed at the rear end of the second microstrip probe 10, an inner cover 3 disposed within the cavity 2 and positioned above the first waveguide cavity 8, the first microstrip probe 7, and the second microstrip probe 10, and an upper cover 4 covering the outer shell 1. The first microstrip probe 7, power resistor 9, and second microstrip probe 10 are printed on a circuit board. In this embodiment, the power resistor 9 has a resistance of 50Ω.

[0039] In this embodiment, a second waveguide cavity 31, a first microstrip probe mounting cavity 32, and a second microstrip probe mounting cavity 33 are defined at the bottom of the inner cover 3. The second waveguide cavity 31 overlaps with the first waveguide cavity 8 and both are T-shaped. The first microstrip probe 7 is connected to both sides of the top of the T-shaped portion of the first waveguide cavity 8, and the second microstrip probe 10 and the waveguide interface 6 overlap with the central axis of the T-shaped portion of the first waveguide cavity 8.

[0040] In this embodiment, to ensure that the second waveguide cavity 31 coincides with the first waveguide cavity 8, the first microstrip probe mounting cavity 32 coincides with the first microstrip probe 7, and the second microstrip probe mounting cavity 33 coincides with the second microstrip probe 10, a plurality of positioning holes 34 are provided at the bottom of the inner cover 3, and a plurality of positioning posts 11 are provided within the cavity 2. The positioning posts 11 correspond one-to-one with the positioning holes 34, and positioning can be achieved by inserting the positioning posts 11 into the positioning holes 34.

[0041] In this embodiment, the first microstrip probe 7 includes an integrally formed and sequentially connected first microstrip 71, second microstrip 72, and third microstrip 73. The first microstrip 71 is 2.3 mm long and 0.5 mm wide; the second microstrip 72 is 1.7 mm long and 0.33 mm wide; and the third microstrip 73 is 2.8 mm long and 0.43 mm wide.

[0042] The thermal conductivity of the second microstrip probe 10 of this embodiment is 0.5 W / mK. The second microstrip probe 10 includes a fourth microstrip 101, a fifth microstrip 102, a sixth microstrip 103, a seventh microstrip 104, and an eighth microstrip 105, which are integrally formed and sequentially connected. The fourth microstrip 101 is connected to the power resistor 9. In this embodiment, the fourth microstrip 101 is 2.2 mm long and 0.5 mm wide; the fifth microstrip 102 is 1.5 mm long and 0.3 mm wide; the sixth microstrip 103 is 0.3 mm long and 1.0 mm wide; the seventh microstrip 104 is 1.1 mm long and 0.7 mm wide; and the eighth microstrip 105 is 3.9 mm long and 0.9 mm wide.

[0043] In this embodiment, a first conversion cavity 81 is provided in the first waveguide cavity 8 and the second waveguide cavity 31. The first conversion cavity 81 is located on a side close to the waveguide interface 6. The length of the first conversion cavity 81 is 4.5 mm and the width is 5 mm.

[0044] In this embodiment, the power setting is 100W at the branch end and 200W at the combiner end. Figure 9 From the electric field distribution diagram, we can see that the maximum field strength of the entire device is Emax = 2.73×106V / m, which is lower than the breakdown field strength Eb = 3×106V / m. This shows that the power handling capacity of the combiner is not a problem. Figure 10 It can be seen that the standing wave at the combiner end is ≤1.3, and the standing wave at the distributor end is ≤1.4. Figure 11 It can be seen that the insertion loss is less than 3.1dB and the amplitude is less than 0.2dB. Figure 12 As can be seen from the above simulation results, the isolation is greater than 15dB. From the above simulation results, it can be seen that the performance of the synthesizer is very good, all working in the K band with a large margin.

[0045] The above embodiments are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any changes based on the design principles of the present invention and any changes made through non-creative work on this basis shall fall within the scope of protection of the present invention.

Claims

1. A K-band high-power high-isolation two-way waveguide splitter / combiner, characterized in that: The invention comprises an outer shell (1), a cavity (2) provided in the outer shell (1), a first waveguide cavity (8) provided in the outer shell (1) and disposed at the bottom of the cavity (2), two coaxial connectors (5) provided on the outer shell (1) and connected to one side of the first waveguide cavity (8), a first microstrip probe (7) connected between the coaxial connectors (5) and the first waveguide cavity (8), a waveguide interface (6) provided on the outer shell (1) and connected to the other side of the first waveguide cavity (8), a second microstrip probe (10) connected to the first waveguide cavity (8) and located on the same axis as the waveguide interface (6), and a second microstrip probe (10) provided on the second microstrip probe. The invention relates to a power resistor (9) at the rear end of the first waveguide cavity (10), an inner cover (3) arranged in the cavity (2) and placed on the upper part of the first waveguide cavity (8), the first microstrip probe (7) and the second microstrip probe (10), and an upper cover (4) covering the outer shell (1); the first waveguide cavity (8) is T-shaped; the first microstrip probe (7) is respectively connected to the top two sides of the T-shape of the first waveguide cavity (8); the second microstrip probe (10) and the waveguide interface (6) coincide with the central axis of the T-shape of the first waveguide cavity (8); the first microstrip probe (7), the power resistor (9) and the second microstrip probe (10) are printed on a circuit board.

2. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1, characterized in that: The bottom of the inner cover (3) is provided with a second waveguide cavity (31), a first microstrip probe installation cavity (32), and a second microstrip probe installation cavity (33); the second waveguide cavity (31) coincides with the first waveguide cavity (8); the first microstrip probe installation cavity (32) coincides with the first microstrip probe (7); and the second microstrip probe installation cavity (33) coincides with the second microstrip probe (10).

3. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1 or 2, characterized in that: The bottom of the inner cover (3) is provided with a plurality of positioning holes (34); a plurality of positioning posts (11) are provided in the cavity (2); and the positioning posts (11) correspond to the positioning holes (34) in a one-to-one manner.

4. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1 or 2, characterized in that: The first microstrip probe (7) comprises a first microstrip (71), a second microstrip (72), and a third microstrip (73) that are integrally formed and sequentially connected.

5. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 4, characterized in that: The first microstrip (71) has a length of 2.3 mm and a width of 0.5 mm; the second microstrip (72) has a length of 1.7 mm and a width of 0.33 mm; and the third microstrip (73) has a length of 2.8 mm and a width of 0.43 mm.

6. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1 or 2, characterized in that: The thermal conductivity of the second microstrip probe (10) is 0.5 W / mK.

7. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1 or 2, characterized in that: The second microstrip probe (10) comprises a fourth microstrip (101), a fifth microstrip (102), a sixth microstrip (103), a seventh microstrip (104), and an eighth microstrip (105) that are integrally formed and sequentially connected; the fourth microstrip (101) is connected to a power resistor (9).

8. The K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 7, characterized in that: The fourth microstrip (101) has a length of 2.2 mm and a width of 0.5 mm; the fifth microstrip (102) has a length of 1.5 mm and a width of 0.3 mm; the sixth microstrip (103) has a length of 0.3 mm and a width of 1.0 mm; the seventh microstrip (104) has a length of 1.1 mm and a width of 0.7 mm; and the eighth microstrip (105) has a length of 3.9 mm and a width of 0.9 mm.

9. A K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 1 or 2, characterized in that: The resistance of the power resistor (9) is 50Ω.

10. The K-band high-power high-isolation two-way waveguide splitter / combiner according to claim 2, characterized in that: A first conversion cavity (81) is provided in the first waveguide cavity (8) and the second waveguide cavity (31); the first conversion cavity (81) is located on a side close to the waveguide interface (6); the first conversion cavity (81) has a length of 4.5 mm and a width of 5 mm.

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