High-selectivity planar ultra-wideband antenna with notch characteristic

Abstract

The utility model discloses a high-selectivity planar ultra-wideband antenna with a notch characteristic. The antenna comprises a dielectric layer; the radiation layer is located on the first surface of the dielectric layer, the radiation layer comprises a radiation body, a gap is formed in the center of the radiation body, the radiation body is connected with a micro-strip feeder extending to the edge of the dielectric layer, and micro-strip resonance units are symmetrically arranged on the two sides of the micro-strip feeder; and the radio frequency ground layer is positioned on the second surface of the dielectric layer. The planar ultra-wideband antenna solves the problem that the existing planar ultra-wideband antenna does not have in-band notch and out-of-band high selectivity.

Description

Technical Field

[0001] The utility model relates to the technical field of antennas, in particular to a highly selective planar ultra-wideband antenna with a notch feature. Background Art

[0002] Planar ultra-wideband antennas have attracted widespread attention and in-depth research from scholars and engineers within the industry due to their advantages, such as high transmission rates, low cost, light weight, simple design, and ease of integration with other components. However, current planar ultra-wideband antennas often lack in-band notching and high out-of-band selectivity. This results in a lack of effective suppression of in-band interference and inefficient use of spectrum resources, significantly limiting their use in modern wireless communication terminals. Utility Model Content

[0003] The main purpose of the utility model is to provide a highly selective planar ultra-wideband antenna with a notch feature, aiming to solve the problem that the existing planar ultra-wideband antenna does not have in-band notch and high out-of-band selectivity.

[0004] To achieve the above objectives, the present invention proposes a highly selective planar ultra-wideband antenna with notch characteristics, comprising:

[0005] dielectric layer;

[0006] a radiation layer located on the first surface of the dielectric layer, the radiation layer including a radiator having a gap in the center thereof, the radiator being connected to a microstrip feeder extending to an edge of the dielectric layer, and microstrip resonant units being symmetrically provided on both sides of the microstrip feeder;

[0007] The radio frequency ground layer is located on the second surface of the dielectric layer.

[0008] Optionally, the radiator includes a rectangular radiating patch and semi-elliptical radiating patches symmetrically arranged on both sides of the rectangular radiating patch, and the lengths of the major axes of the two semi-elliptical radiating patches are equal to the length of the rectangular radiating patch.

[0009] Optionally, the gap is configured as a rectangular gap, and the rectangular gap is opened at the center of the rectangular radiation patch.

[0010] Optionally, the microstrip resonant unit is set as an F-type microstrip resonant unit, and the F-type microstrip resonant unit includes two first units connected in sequence along a direction parallel to the microstrip feed line, and two second units arranged perpendicular to the microstrip feed line, and the two second units are arranged in parallel on the same side of the first unit.

[0011] Optionally, the RF ground layer includes a first rectangular metal patch, a second rectangular metal patch and a third rectangular metal patch connected to each other, the first rectangular metal patch and the third rectangular metal patch are symmetrically arranged on both sides of the second rectangular metal patch, and the length of the first rectangular metal patch and the third rectangular metal patch is greater than the length of the second rectangular metal patch.

[0012] Optionally, the perpendicular bisectors of the radiator, the microstrip feeder and the radio frequency stratum coincide with the perpendicular bisector of the dielectric layer.

[0013] Optionally, the radiation layer and the radio frequency ground layer are both configured as copper-plated layers.

[0014] Optionally, the lengths of the major axes of the rectangular radiation patch and the semi-elliptical radiation patch are both set to L P , the width of the rectangular radiation patch is set to W P , the length of the semi-minor axis of the semi-elliptical radiation patch is set to L T ;

[0015] The length of the microstrip feed line is set to L F , width is set to W F ;

[0016] The length of the first unit close to the radiator is set to L1, the length of the first unit far from the radiator is set to L2, the length of the second unit close to the radiator is set to L3, the length of the second unit far from the radiator is set to L4, the widths of the first unit and the second unit are both set to W1; the spacing between the first unit and the microstrip feed line is set to S;

[0017] The length of the dielectric layer is set to L A The overall width of the dielectric layer and the radio frequency ground is set to W A , the length of the second rectangular metal patch is set to L GM , the width of the second rectangular metal patch is set to W GM The lengths of the first rectangular metal patch and the second rectangular metal patch are both set to L GRL .

[0018] Optionally, the frequency f corresponding to the transmission zero point where the antenna realizes the notch characteristic N The relationship between the size parameters of the microstrip resonant unit is:

[0019]

[0020] Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

[0021] Optionally, the frequency f corresponding to the transmission zero point where the antenna achieves high selectivity on the upper passband edge Z The relationship between the size parameters of the microstrip resonant unit is:

[0022]

[0023] The beneficial effects of the present invention are: improving the structure of the existing planar ultra-wideband antenna, and by changing the shape and size of the radiation layer and the radio frequency stratum, making the antenna have the characteristics of in-band notch and high selectivity out of band, which can effectively suppress in-band interference and efficiently utilize spectrum resources. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0025] Figure 1 This is a side view of the antenna of the utility model;

[0026] Figure 2 This is a front view of one side of the radiation layer of the utility model;

[0027] Figure 3 This is a main view of one side of the radio frequency formation of the utility model;

[0028] Figure 4 This is a schematic diagram of the structural parameters of the radiation layer of the utility model;

[0029] Figure 5 This is a schematic diagram of the radio frequency formation structure parameters of the utility model;

[0030] Figure 6 This is a simulation result diagram of the standing wave ratio of the antenna of the utility model;

[0031] Figure 7 The maximum gain and radiation efficiency simulation results of the antenna of this utility model;

[0032] Figure 8 The radiation pattern of the antenna of the utility model at 11.0 GHz;

[0033] Figure 9 The radiation pattern of the antenna of the utility model at 18.0 GHz;

[0034] Figure 10 This is the radiation pattern of the antenna of the utility model at 25.0 GHz.

[0035] Description of Figure Numbers:

[0036] dielectric layer 1;

[0037] Radiating layer 2; radiator 21; rectangular radiating patch 211; semi-elliptical radiating patch 212; slot 22; microstrip feed line 23; microstrip resonant unit 24; first unit 241; second unit 242;

[0038] RF ground layer 3; first rectangular metal patch 31; second rectangular metal patch 31; third rectangular metal patch 31.

[0039] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0041] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly.

[0042] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if the meaning of "and / or" appearing in the full text is to include three parallel schemes, taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0043] An embodiment of the present invention provides a highly selective planar ultra-wideband antenna with notch characteristics, referring to Figures 1 to 3 include:

[0044] dielectric layer 1;

[0045] a radiation layer 2 located on the first surface of the dielectric layer 1, the radiation layer 2 including a radiator 21 having a gap 22 at the center thereof, the radiator 21 being connected to a microstrip feed line 23 extending to the edge of the dielectric layer 1, and microstrip resonant units 24 being symmetrically provided on both sides of the microstrip feed line 23;

[0046] The radio frequency layer 3 is located on the second surface of the dielectric layer 1 .

[0047] In this embodiment, the structure of the existing planar ultra-wideband antenna is improved. By changing the shape and size of the radiating layer 2 and the radio frequency layer 3, the antenna has the characteristics of in-band notching and high out-of-band selectivity, which can effectively suppress in-band interference and efficiently utilize spectrum resources. A slot 22 is provided at the center of the radiator 21. The slot 22 can increase the bandwidth of the antenna, allowing it to operate effectively over a wider frequency range. In this embodiment, a wider impedance bandwidth can be obtained. The microstrip resonant units 24 on both sides of the microstrip feed line 23 are arranged symmetrically, which can give the antenna better omnidirectional radiation performance. In this embodiment, the microstrip feed line 23 uses a 50Ω microstrip feed line 23. One end of the microstrip feed line 23 is connected to the radiator 21, and the other end extends to the edge of the dielectric layer 1.

[0048] Specifically, the radiator 21 includes a rectangular radiating patch 211 and semi-elliptical radiating patches 212 symmetrically disposed on either side of the rectangular radiating patch 211. The major axes of the two semi-elliptical radiating patches 212 are equal in length to the rectangular radiating patch 211. In this embodiment, the radiator 21 is formed into a polygonal shape by a rectangular radiating patch 211 and two semi-elliptical radiating patches 212. This further improves the impedance bandwidth and adjusts the resonant frequency of the antenna to adapt it to a specific operating frequency band, thereby improving the radiation pattern and gain and providing better directivity and coverage.

[0049] Furthermore, the slot 22 is set to a rectangular slot 22, and the rectangular slot 22 is opened at the center of the rectangular radiation patch 211, which further expands the bandwidth and improves its working performance in a wider frequency range. At the same time, it can also affect the radiation pattern of the antenna and optimize the directivity and gain.

[0050] Furthermore, the microstrip resonant unit 24 is configured as an F-type microstrip resonant unit 24, which includes two first units 241 connected in sequence along a direction parallel to the microstrip feed line 23, and two second units 242 arranged perpendicular to the microstrip feed line 23, with the two second units 242 arranged in parallel on the same side of the first unit 241. It should be noted that if the two F-type microstrip resonant units 24 are removed, the antenna will be a planar broadband antenna with poor selectivity. After adding the F-type microstrip resonant unit 24, two transmission zeros will be introduced. The first transmission zero falls within the impedance bandwidth of the planar antenna, which serves to introduce a notch for the planar broadband antenna, effectively suppressing in-band interference. The second transmission zero falls near the upper passband edge of the planar impedance antenna, which can improve the antenna's selectivity.

[0051] Furthermore, the radio frequency layer 3 includes a first rectangular metal patch 31, a second rectangular metal patch 32, and a third rectangular metal patch 33 that are interconnected. The first rectangular metal patch 31 and the third rectangular metal patch 33 are symmetrically arranged on either side of the second rectangular metal patch 32, and the lengths of the first rectangular metal patch 31 and the third rectangular metal patch 33 are greater than the length of the second rectangular metal patch 32. In this embodiment, the first rectangular metal patch 31, the second rectangular metal patch 32, and the third rectangular metal patch 33 form a concave octagonal structure, which can further improve the bandwidth of the antenna. The first rectangular metal patch 31 and the third rectangular metal patch 33 are symmetrically arranged on either side of the second rectangular metal patch 32. The symmetrical structural design can enable the antenna to have better omnidirectional radiation performance.

[0052] Furthermore, the perpendicular midlines of the radiator 21 , the microstrip feed line 23 and the radio frequency layer 3 coincide with the perpendicular midline of the dielectric layer 1 , thus simplifying the overall structure of the antenna and achieving better radiation performance.

[0053] Furthermore, both the radiating layer 2 and the RF ground layer 3 are copper-plated. It should be noted that copper has high electrical conductivity. Therefore, using copper-plated layers can effectively transmit electrical signals and reduce signal loss. Good conductivity is a key factor in ensuring antenna performance, especially in high-frequency applications. Due to copper's low electrical resistance, the copper-plated layer can reduce current loss in the antenna, thereby improving the antenna's overall efficiency. A highly efficient antenna can more effectively transmit and receive signals.

[0054] Further, refer to Figure 4 and Figure 5 The lengths of the major axes of the rectangular radiation patch 211 and the semi-elliptical radiation patch 212 are both set to L P , the width of the rectangular radiation patch 211 is set to W PThe length of the semi-minor axis of the semi-elliptical radiation patch 212 is set to L T ;

[0055] The length of the microstrip feed line 23 is set to L F , width is set to W F ;

[0056] The length of the first unit 241 close to the radiator 21 is set to L1, the length of the first unit 241 away from the radiator 21 is set to L2, the length of the second unit 242 close to the radiator 21 is set to L3, the length of the second unit 242 away from the radiator 21 is set to L4, the width of the first unit 241 and the second unit 242 are both set to W1; the distance between the first unit 241 and the microstrip feed line 23 is set to S;

[0057] The length of the dielectric layer 1 is set to L A The overall width of the dielectric layer 1 and the radio frequency ground is set to W A , the length of the second rectangular metal patch 32 is set to L GM , the width of the second rectangular metal patch 32 is set to W GM The lengths of the first rectangular metal patch 31 and the second rectangular metal patch 32 are both set to L GRL .

[0058] Furthermore, in this embodiment, the dielectric constant of the dielectric layer 1 is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the thickness of the copper plating layer is 0.035 mm.

[0059] The frequency f corresponding to the transmission zero point where the antenna realizes the notch characteristic N The relationship between the size parameters of the microstrip resonant unit 24 is:

[0060]

[0061] Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

[0062] The frequency f corresponding to the transmission zero point where the antenna achieves high selectivity on the upper passband edge Z The relationship between the size parameters of the microstrip resonant unit 24 is:

[0063]

[0064] Furthermore, in this embodiment, the antenna performance is verified and described by a set of optimized parameters, wherein L A =11.5mm,W A =11.0mm,LGM =4.4mm,L GRL =5.5mm,W GM =8.4mm,L P =6.5mm,W P =4.8mm,L T =1.3mm, L1=1.7mm, L2=1.59mm, L3=1.47mm, L4=1.4mm, S=0.15mm, W1=0.11mm, L F =4.5mm,W F =0.4mm.

[0065] The reflection coefficient of the planar ultra-wideband antenna after parameter optimization is as follows: Figure 6 As shown in the figure, the stopband bandwidth with a reflection coefficient less than -10dB ranges from 9.9 to 25.9GHz, with a center frequency of 17.9GHz, an absolute bandwidth of 16GHz, and a relative bandwidth of 89.45%, exhibiting ultra-wideband characteristics. Within the passband, there are three transmission poles located at 11.7GHz, 17.7GHz, and 23.1GHz, respectively, ensuring maximum gain and flatness of radiation efficiency within the passband. There is also a transmission zero forming a notch at 19GHz within the passband, which can effectively suppress in-band notches. There is also a transmission zero near the upper passband edge at 30GHz, which can improve antenna selectivity and thus improve the utilization of spectrum resources.

[0066] Figure 7 The simulation results of the antenna's maximum gain and radiation efficiency are shown in the figure. As can be seen from the figure, within the passband, its average maximum gain is 3.63dBi, showing the advantage of high maximum gain; within the passband, its average radiation efficiency is 94.1%, showing the advantage of high radiation efficiency; at the notch center frequency, its maximum gain is only -5.54dBi, and the radiation efficiency is 29.84%. Comparing the average maximum gain and average radiation efficiency within the passband, it can be seen that it has high isolation at the notch center frequency; at 6GHz, its maximum gain is only -4.27dBi, and the radiation efficiency is 20.8%, compared with the maximum gain of 2.48dBi and the radiation efficiency of 90.3% at 9.9GHz, it can be seen that it has high selectivity at the lower passband edge; at 35GHz, its maximum gain is only -4.76dBi, and the radiation efficiency is 25.1%, compared with the maximum gain of 4.33dBi and the radiation efficiency of 91.2% at 25.8GHz, it can be seen that it has high selectivity at the upper passband edge. From the above analysis, it can be seen that the antenna not only has high gain and high radiation efficiency within the passband, but also has high isolation at the notch center frequency and high selectivity at the upper and lower passband edges.

[0067] Figures 8 to 10The radiation patterns of the antenna at 11.0 GHz, 18.0 GHz, and 25 GHz show that the antenna is omnidirectional.

[0068] Therefore, the planar ultra-wideband antenna proposed in this embodiment has the characteristics of in-band notching and high out-of-band selectivity, which can effectively suppress in-band interference and efficiently utilize spectrum resources.

[0069] The above description is merely an optional embodiment of the present invention and does not limit the patent scope of the present invention. All equivalent structural transformations made by utilizing the contents of the present invention specification and drawings under the utility model concept, or direct / indirect application in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A highly selective planar ultra-wideband antenna with notch characteristics, characterized in that: include: dielectric layer; a radiation layer located on the first surface of the dielectric layer, the radiation layer including a radiator having a gap in the center thereof, the radiator being connected to a microstrip feeder extending to an edge of the dielectric layer, and microstrip resonant units being symmetrically provided on both sides of the microstrip feeder; The radio frequency ground layer is located on the second surface of the dielectric layer.

2. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 1, characterized in that: The radiator includes a rectangular radiating patch and semi-elliptical radiating patches symmetrically arranged on both sides of the rectangular radiating patch. The lengths of the major axes of the two semi-elliptical radiating patches are equal to the length of the rectangular radiating patch.

3. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 2, characterized in that: The gap is configured as a rectangular gap, and the rectangular gap is opened at the center of the rectangular radiation patch.

4. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 3, wherein: The microstrip resonant unit is configured as an F-type microstrip resonant unit, and the F-type microstrip resonant unit includes two first units connected in sequence along a direction parallel to the microstrip feed line, and two second units arranged perpendicular to the microstrip feed line, and the two second units are arranged in parallel on the same side of the first unit.

5. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 4, characterized in that: The radio frequency layer includes a first rectangular metal patch, a second rectangular metal patch and a third rectangular metal patch connected to each other, the first rectangular metal patch and the third rectangular metal patch are symmetrically arranged on both sides of the second rectangular metal patch, and the length of the first rectangular metal patch and the third rectangular metal patch is greater than the length of the second rectangular metal patch.

6. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 1, characterized in that: The perpendicular midlines of the radiator, the microstrip feeder and the radio frequency stratum coincide with the perpendicular midline of the dielectric layer.

7. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 1, characterized in that: The radiation layer and the radio frequency ground layer are both configured as copper-plated layers.

8. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 5, characterized in that: The lengths of the major axes of the rectangular radiation patch and the semi-elliptical radiation patch are both set to L P , the width of the rectangular radiation patch is set to W P , the length of the semi-minor axis of the semi-elliptical radiation patch is set to L T ; The length of the microstrip feed line is set to L F , width is set to W F ; The length of the first unit close to the radiator is set to L1, the length of the first unit far from the radiator is set to L2, the length of the second unit close to the radiator is set to L3, the length of the second unit far from the radiator is set to L4, the widths of the first unit and the second unit are both set to W1; the spacing between the first unit and the microstrip feed line is set to S; The length of the dielectric layer is set to L A The overall width of the dielectric layer and the radio frequency ground is set to W A , the length of the second rectangular metal patch is set to L GM , the width of the second rectangular metal patch is set to W GM The lengths of the first rectangular metal patch and the second rectangular metal patch are both set to L GRL .

9. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 8, characterized in that: The frequency f corresponding to the transmission zero point where the antenna realizes the notch characteristic N The relationship between the size parameters of the microstrip resonant unit is: Among them, ε r is the dielectric constant of the medium, and c is the speed of light in a vacuum.

10. The highly selective planar ultra-wideband antenna with notch characteristics according to claim 8, characterized in that: The frequency f corresponding to the transmission zero point where the antenna achieves high selectivity on the upper passband edge Z The relationship between the size parameters of the microstrip resonant unit is:

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