ESD protection device structure

Abstract

The utility model relates to an ESD (Electro-Static Discharge) protection device, in particular to an ESD protection device structure. Comprising a substrate, a dielectric layer and a passivation layer which are sequentially distributed from bottom to top, an active region is arranged between the middle part of the upper surface of the substrate and the dielectric layer; a metal layer is arranged between the middle part of the lower surface of the passivation layer and the dielectric layer; the dielectric layer is provided with a plurality of staggered contact holes, and the lower surface of the metal layer extends to the upper surface of the active region through the contact holes and is in contact with the upper surface of the active region. According to the utility model, the lower surface of the metal layer is effectively supported through the dielectric layer between the adjacent contact holes, so that the risk that craters are formed on the metal layer due to extrusion of a welding head when the welding head is used for welding and routing is reduced.

Description

Technical Field

[0001] The utility model relates to an ESD protection device, in particular to an ESD protection device structure. Background Art

[0002] As chip feature sizes continue to decrease, the depth of structures and dielectric thickness in the process become very thin, and at the same time, the thickness of the metal layer also decreases accordingly. When there are circuit structures under the chip pressure points, wire bonding operations may damage these circuit structures due to the crater effect. To circumvent this problem, the strategy commonly adopted in the packaging field is to adjust the diameter of the bonding wire and select softer gold wire or alloy wire to reduce the impact on the circuit structure during wire bonding. However, due to cost and equipment differences, this crater damage phenomenon still occurs from time to time.

[0003] For power devices, thicker metal layers are often chosen to avoid cratering during wire bonding. ESD (electrostatic discharge) protection devices fall into this category. However, with the accelerated miniaturization of devices, chip thickness is limited due to package form factors and wire bonding requirements, and cannot exceed specified limits. Furthermore, due to certain process limitations, the metal layer cannot be made excessively thick. Therefore, during the wire bonding process, the soldering tip may still squeeze the metal layer, causing deformation and cratering, which can affect production quality. Utility Model Content

[0004] In order to solve the above technical problems, the utility model provides an ESD protection device structure, which effectively supports the lower surface of the metal layer through the dielectric layer between adjacent contact holes, thereby reducing the risk of craters forming on the metal layer due to the extrusion of the welding head when using the welding head for welding wires.

[0005] In order to solve the above technical problems, the technical solutions provided by the present invention are as follows:

[0006] An ESD protection device structure includes a substrate, a dielectric layer and a passivation layer arranged in sequence from bottom to top;

[0007] An active area is provided between the middle portion of the upper surface of the substrate and the dielectric layer;

[0008] A metal layer is provided between the middle portion of the lower surface of the passivation layer and the dielectric layer;

[0009] A plurality of staggered contact holes are provided on the dielectric layer, and the lower surface of the metal layer extends to the upper surface of the active area through the contact holes and contacts the upper surface of the active area.

[0010] Furthermore, the dielectric layer includes a silicon dioxide layer and a silicon nitride layer sequentially distributed from bottom to top;

[0011] The contact holes are opened on the silicon dioxide layer and the silicon nitride layer.

[0012] Furthermore, the thickness of the silicon dioxide layer is The thickness of the silicon nitride layer is

[0013] Furthermore, the contact hole is a regular hexagonal contact hole.

[0014] Furthermore, the passivation layer is a silicon nitride passivation layer.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] 1. The ESD protection device structure provided by the present invention provides a dielectric layer between the metal layer and the active area in the middle of the upper surface of the substrate, and provides staggered contact holes on the dielectric layer. On the one hand, the current can be evenly distributed on the active area to prevent the chip from burning out. On the other hand, the dielectric layer between adjacent contact holes can effectively support the lower surface of the metal layer, reducing the risk of craters forming on the metal layer due to the extrusion of the welding head when using the welding head for welding wires.

[0017] 2. In the ESD protection device structure provided by the present invention, the contact holes on the dielectric layer are hexagonal contact holes, which can reduce the current distribution density and make the current distribution more uniform, thereby reducing the risk of chip burning due to the current concentration effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic structural diagram of an embodiment of the present utility model;

[0019] Figure 2 This is a schematic diagram of the structure of an embodiment of the utility model after removing the wire bonding.

[0020] Explanation of the reference numerals: 1 is a substrate, 2 is a dielectric layer, 21 is a silicon dioxide layer, 22 is a silicon nitride layer, 3 is a passivation layer, 4 is an active area, 5 is a metal layer, 6 is a contact hole, and 7 is a bonding wire. DETAILED DESCRIPTION

[0021] The following is a clear and complete description of the technical solutions of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0022] like Figure 1As shown, an ESD protection device structure includes a substrate 1, a silicon dioxide layer 21, a silicon nitride layer 22 and a silicon nitride passivation layer 3 distributed sequentially from bottom to top; and the thickness of the silicon dioxide layer 21 is The thickness of the silicon nitride layer 22 is

[0023] An active region 4 is provided between the middle portion of the upper surface of the substrate 1 and the silicon dioxide layer 21;

[0024] A metal layer 5 is provided between the middle portion of the lower surface of the silicon nitride passivation layer 3 and the silicon nitride layer 22;

[0025] like Figure 2 As shown, a plurality of staggered regular hexagonal contact holes 6 are provided on the silicon dioxide layer 21 and the silicon nitride layer 22 , and the lower surface of the metal layer 5 extends through the contact holes 6 to the upper surface of the active area 4 and contacts the upper surface of the active area 4 .

[0026] By opening a plurality of staggered regular hexagonal contact holes 6 on the silicon dioxide layer 21 and the silicon nitride layer 22, the plurality of staggered regular hexagonal contact holes 6 make the silicon dioxide layer 21 and the silicon nitride layer 22 have a honeycomb structure. When a welding head is used to weld a wire 7 on the metal layer 5, the silicon dioxide layer 21 and the silicon nitride layer 22 between the two contact holes 6 can effectively support the metal layer 5, thereby reducing the risk of craters forming on the metal layer 5 due to the extrusion of the welding head when the welding head is used to weld the wire 7; and avoiding damage to the chip caused by the welding head during the process of using the welding head to weld the wire 7; and the plurality of regular hexagonal contact holes 6 can also make the current evenly distributed on the active area 4, preventing the chip from burning.

[0027] like Figure 1 and Figure 2 As shown, the ESD protection device structure provided in this embodiment has a specific manufacturing method as follows:

[0028] 1) forming an active region 4 in the middle of the upper surface of the substrate 1 using a Photo and Imp l ant process;

[0029] 2) Form a layer with a thickness of A silicon dioxide layer 21;

[0030] 3) Depositing a layer of thickness of silicon dioxide layer 21 on the surface of silicon dioxide layer 21 by CVD deposition process a silicon nitride layer 22;

[0031] 4) forming a plurality of staggered regular hexagonal contact holes 6 on the silicon dioxide layer 21 and the silicon nitride layer 22 by etching, forming a honeycomb structure as a whole;

[0032] 5) forming a metal layer 5 on the upper surface of the silicon nitride layer 22 and in the regular hexagonal contact hole 6 by sputtering;

[0033] 6) A silicon nitride passivation layer is deposited on the upper surface of the metal layer 5 and the silicon nitride layer 22 using a CVD deposition process; after the deposition is completed, an ESD protection device can be obtained.

[0034] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention shall be covered by the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope of protection of the claims.

Claims

1. An ESD protection device structure, characterized in that: It comprises a substrate (1), a dielectric layer (2) and a passivation layer (3) which are sequentially arranged from bottom to top; An active region (4) is provided between the middle portion of the upper surface of the substrate (1) and the dielectric layer (2); A metal layer (5) is provided between the middle portion of the lower surface of the passivation layer (3) and the dielectric layer (2); A plurality of staggered contact holes (6) are provided on the dielectric layer (2); the lower surface of the metal layer (5) extends through the contact holes (6) to the upper surface of the active area (4) and contacts the upper surface of the active area (4).

2. The ESD protection device structure according to claim 1, wherein: The dielectric layer (2) comprises a silicon dioxide layer (21) and a silicon nitride layer (22) sequentially distributed from bottom to top; The contact hole (6) is opened on the silicon dioxide layer (21) and the silicon nitride layer (22).

3. The ESD protection device structure according to claim 2, wherein: The thickness of the silicon dioxide layer (21) is The thickness of the silicon nitride layer (22) is 4. The ESD protection device structure according to claim 1 or 2, characterized in that: The contact hole (6) is a regular hexagonal contact hole.

5. The ESD protection device structure according to claim 1, wherein: The passivation layer (3) is a silicon nitride passivation layer.

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