Air inlet device for TOPCON battery processing

Abstract

The utility model relates to the technical field of TOPCON battery processing, in particular to an air inlet device for TOPCON battery processing, which comprises a tubular diffusion furnace, an air inlet component is arranged on the outer side of the tubular diffusion furnace, and the air inlet component comprises a first air inlet pipe, a second air inlet pipe and an air inlet pump. The gas inlet assembly comprising the first gas inlet pipe and the second gas inlet pipe is adopted, the gas inlet pump is used in a combined mode, precise control over gas flow can be achieved, particularly, due to the design that the first gas inlet pipe is shorter than the second gas inlet pipe, the gas flow can be accurately controlled, and the gas flow can be accurately controlled. And the gas can be better mixed before entering the tubular diffusion furnace, so that the uniformity of the atmosphere in the furnace is ensured, which is very important for improving the performance of the TOPCON battery.

Description

Technical Field

[0001] The utility model belongs to the technical field of TOPCON battery processing, in particular to an air intake device used for TOPCON battery processing. Background Art

[0002] In the solar photovoltaic industry, crystalline silicon cells, as one of the mainstream products, have long been a focus of industry attention for improvements in manufacturing processes and technology. With the continuous pursuit of efficient and low-cost production models, the manufacturing process of crystalline silicon cells has undergone numerous innovations and upgrades. The diffusion process, a key step in the manufacture of crystalline silicon solar cells, plays a crucial role in improving cell conversion efficiency. The diffusion process primarily involves forming a thin PN junction layer on the surface of the silicon wafer. This process requires precise control of factors such as temperature, time, and gas composition to ensure the ideal doping concentration distribution, known as "sheet resistance" uniformity.

[0003] In traditional diffusion processes, most equipment uses a single straight-through air inlet pipe to deliver dopant gas into the reaction chamber. Although this method is easy to operate and low in cost, the uneven distribution of gas leads to poor consistency in the diffusion layer's square resistance, affecting the performance of the final product. To overcome this limitation, some manufacturers have begun to explore new gas introduction methods, such as spray air intake technology. This technology sprays dopant gas evenly onto the silicon wafer through multiple small holes or nozzles, which can theoretically significantly improve the uniformity of square resistance. However, the design of the spray air intake system is more complex, and due to the small size of the nozzle, it is easily affected by the deposition of dopants and becomes clogged, which not only increases the maintenance cost of the equipment, but may also lead to a decrease in production efficiency. Utility Model Content

[0004] The present invention aims to solve at least one of the technical problems in the prior art. To this end, the present invention provides an air intake device for TOPCON battery processing.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solution: an air intake device for TOPCON battery processing, comprising a tubular diffusion furnace, an air intake assembly being arranged on the outside of the tubular diffusion furnace, the air intake assembly comprising a first air intake pipe, a second air intake pipe and an air intake pump, the first air intake pipe and the second air intake pipe both pass through the tubular diffusion furnace and are connected to the air intake pump.

[0006] Preferably, the length of the first air intake pipe is shorter than that of the second air intake pipe.

[0007] Preferably, a storage mechanism is provided inside the tubular diffusion furnace, and the storage mechanism is used to load single crystal silicon wafers.

[0008] Preferably, the storage mechanism includes a storage rack and an adjusting member, the storage rack includes a bottom plate, both side walls of the bottom plate are connected to fixed plates, and the adjusting member is located above the fixed plates.

[0009] Preferably, a slide groove is provided on one side wall of the fixing plate, the slide groove allows the adjustment member to move, and a plurality of insertion holes are provided on the top end surface of the fixing plate.

[0010] Preferably, the adjusting member is an adjusting plate, and a threaded hole matching the jack is formed on the end surface of the adjusting plate.

[0011] Preferably, a fixing rod is provided on the outer side of the adjustment plate, and one end of the fixing rod passes through the insertion hole and is threadedly connected to the threaded hole.

[0012] Preferably, the end surface of the bottom plate is provided with a plurality of placement grooves, and the placement grooves are used to fix the single crystal silicon wafers.

[0013] Compared with the prior art, the beneficial effects of the present invention are:

[0014] (1) The present invention uses an air intake assembly comprising a first air intake pipe and a second air intake pipe, combined with an air intake pump, to achieve precise control of the gas flow rate. In particular, the design of the first air intake pipe being shorter than the second air intake pipe enables better mixing of the gases before entering the tubular diffusion furnace, thereby ensuring uniformity of the atmosphere within the furnace, which is crucial for improving the performance of TOPCON cells.

[0015] (2) The storage mechanism provided inside the practical tubular diffusion furnace includes an adjustable storage rack and an adjusting member, which not only provides sufficient space for loading single crystal silicon wafers, but also enables the operator to adjust the spacing between silicon wafers according to actual needs through the design of the adjusting member (such as the combination of the adjusting plate and the fixing rod) to adapt to the processing requirements of silicon wafers of different sizes or thicknesses, thereby increasing the flexibility and applicability of the equipment.

[0016] (3) In this embodiment, the adjusting member is connected to the fixed plate via a sliding groove, and the position of the adjusting plate is fixed by the combination of the socket and the threaded hole. This design simplifies the operation process and ensures stability and safety in high-temperature environments. In addition, the multiple placement grooves provided on the bottom plate can effectively fix the single crystal silicon wafers and prevent them from shifting during the processing, further improving the safety and yield rate of the processing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural diagram of the utility model;

[0018] Figure 2 It is a schematic diagram of the structure of the storage mechanism from a bird's-eye view;

[0019] Figure: 1, tubular diffusion furnace; 2, first air inlet pipe; 3, second air inlet pipe; 4, air inlet pump; 5, storage rack; 6, adjustment plate; 7, bottom plate; 8, fixing plate; 9, fixing rod; DETAILED DESCRIPTION

[0020] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0021] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships described in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation to the present invention.

[0022] See also Figure 1-2 To achieve the above-mentioned purpose, the present embodiment provides an air intake device for TOPCON battery processing, including a tubular diffusion furnace 1. An air intake assembly is provided on the outside of the tubular diffusion furnace 1. The air intake assembly includes a first air intake pipe 2, a second air intake pipe 3 and an air intake pump 4. The first air intake pipe 2 and the second air intake pipe 3 both pass through the tubular diffusion furnace 1 and are connected to the air intake pump 4.

[0023] In this embodiment, by designing the air intake method, the air intake assembly consists of a first air intake pipe 2, a second air intake pipe 3 and a powerful air intake pump 4. These two air intake pipes run through the entire tubular diffusion furnace 1 and are connected to the air intake pump 4. Such a design not only ensures that the gas can enter the interior of the diffusion furnace evenly and efficiently, but also can accurately control the gas flow rate and composition ratio entering the furnace, which is crucial for the preparation process of TOPCON batteries; the dual-tube air intake system of the air intake device can effectively avoid the problem of uneven gas distribution that may be caused by a single air inlet, thereby ensuring that the chemical reaction environment required in the TOPCON battery processing process is more stable, and improving the uniformity and consistency of the product. Secondly, by adjusting the working state of the air intake pump 4, the atmosphere conditions in the furnace can be flexibly adjusted to meet the gas requirements of different process stages, thereby improving the battery conversion efficiency.

[0024] In other embodiments, the tubular diffusion furnace 1 is further provided with an exhaust pipe, and the output end of the exhaust pipe is further connected to an exhaust pump.

[0025] Preferably, the length of the first air intake pipe 2 is shorter than that of the second air intake pipe 3 .

[0026] In this embodiment, the shorter first inlet pipe 2 allows for faster gas delivery to the critical reaction zone within the diffusion furnace, while the longer second inlet pipe 3 delivers other necessary auxiliary gases. This design ensures that the two gases mix in the optimal ratio at a specific location within the furnace, promoting uniform chemical reactions and thus improving the quality and consistency of TOPCON cells. The shorter first inlet pipe 2 allows key reactant gases to reach the reaction zone quickly, reducing transport time and accelerating the overall reaction rate. This is particularly important for improving production line efficiency, enabling higher yields without sacrificing product quality. Shorter inlet pipes mean less heat loss during gas transport, which is particularly important in diffusion furnaces operating at high temperatures. Reduced heat loss not only improves energy efficiency but also reduces production costs. By adjusting the gas flow rates in the first and second inlet pipes 2 and 3, flexible processing can be achieved for TOPCON cells of varying models and specifications. This flexibility allows the production process to better adapt to market changes and enhances the company's competitiveness.

[0027] In this embodiment, a storage mechanism is provided inside the tubular diffusion furnace 1 , and the storage mechanism is used to load single crystal silicon wafers.

[0028] In this embodiment, the design of the storage mechanism makes the loading and unloading of single-crystal silicon wafers more convenient and faster. Operators can easily place silicon wafers into the storage mechanism, reducing the time and complexity of manual operations and improving production efficiency. The storage mechanism effectively prevents deformation and damage to silicon wafers in high-temperature environments. This not only protects the expensive single-crystal silicon wafers but also ensures the quality and performance of the final product.

[0029] In this embodiment, the storage mechanism includes a storage rack 5 and an adjusting member. The storage rack 5 includes a bottom plate 7 . Both side walls of the bottom plate 7 are connected to fixed plates 8 . The adjusting member is located above the fixed plates 8 .

[0030] In this embodiment, the base plate 7 and fixed plate 8 of the storage rack 5 provide a secure support for the single-crystal silicon wafers, ensuring their stability during high-temperature processing. This not only reduces movement and deformation of the silicon wafers within the furnace, but also prevents damage from vibration or collision, thereby improving product yield. Adjustments located above the fixed plate 8 allow for flexible adjustment of the height and spacing of the storage racks 5 to accommodate the different sizes and types of single-crystal silicon wafers. This adjustable design allows the storage mechanism to adapt to diverse production needs, enhancing the versatility and flexibility of the equipment.

[0031] In this embodiment, a sliding groove is provided on one side wall of the fixing plate 8 , and the adjusting member is movable in the sliding groove. A plurality of insertion holes are provided on the top end surface of the fixing plate 8 .

[0032] In this embodiment, the adjusting member is an adjusting plate 6 , and a threaded hole matching the insertion hole is formed on the end surface of the adjusting plate 6 .

[0033] In this embodiment, the design of the slide allows the adjustment member to slide smoothly on the fixed plate 8, so that the position of the adjustment member can be precisely adjusted. This high-precision adjustment capability ensures that the position of the single crystal silicon wafer on the storage rack 5 is more accurate, thereby improving the uniformity and consistency of the chemical reaction. The combined design of the slide and the socket allows the adjustment member to be fixed in multiple different positions to accommodate single crystal silicon wafers of different sizes and types. This flexibility enables the storage mechanism to flexibly respond to various production needs, improving the versatility and applicability of the equipment. Through the coordination of the slide and the socket, the height and spacing of the storage rack 5 can be precisely adjusted to optimize the flow path of the gas in the diffusion furnace. This not only ensures the uniform distribution of gas on the surface of the silicon wafer, but also improves the efficiency and quality of the chemical reaction.

[0034] In this embodiment, a fixing rod 9 is provided on the outer side of the adjustment plate 6 , and one end of the fixing rod 9 passes through the insertion hole and is threadedly connected to the threaded hole.

[0035] In this embodiment, the fixing rod 9 is fixed in the socket by a threaded connection, which can achieve fine adjustment. This high-precision adjustment method ensures that the position of the adjustment plate 6 is more accurate, thereby improving the positioning accuracy of the single crystal silicon wafer on the storage rack 5 and ensuring the uniformity and consistency of the chemical reaction. The threaded connection design enables the fixing rod 9 to be firmly fixed in the socket, ensuring the stability of the adjustment plate 6 during high-temperature treatment. Even under high temperature and vibration conditions, the adjustment plate 6 will not loosen or shift, thereby improving the reliability and safety of the production process. The position of the adjustment plate 6 can be easily adjusted by rotating the fixing rod 9, and the operation is simple and quick. This design reduces the complexity of operation, improves production efficiency, and also reduces the labor intensity of the operator.

[0036] In this embodiment, a plurality of placement grooves are provided on the end surface of the bottom plate 7 , and the placement grooves are used to fix the single crystal silicon wafers.

[0037] In this embodiment, the design of the placement groove provides a stable support point for the single crystal silicon wafer, ensuring the stability of the silicon wafer during high-temperature treatment. This not only reduces the movement and deformation of the silicon wafer in the furnace, but also avoids damage caused by vibration or collision, thereby improving the yield rate of the product. The shape and size of the placement groove match the single crystal silicon wafer, which can effectively prevent the silicon wafer from sliding during high-temperature treatment. This design ensures the stability of each silicon wafer in a fixed position and avoids the problem of uneven chemical reaction caused by position offset. The design of the placement groove takes into account the characteristics of gas flow and ensures uniform distribution of gas in the diffusion furnace. By rationally designing the layout of the placement groove, the flow path of the gas on the surface of the silicon wafer can be optimized, thereby improving the uniformity and consistency of the chemical reaction.

[0038] The above description is only a preferred embodiment of the present invention and does not limit the patent scope of the present invention. All equivalent structural transformations made by using the contents of the present invention specification and drawings under the utility model concept, or direct / indirect application in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. An air intake device for TOPCON battery processing, characterized by: It comprises a tubular diffusion furnace, an air intake assembly is arranged on the outside of the tubular diffusion furnace, the air intake assembly comprises a first air intake pipe, a second air intake pipe and an air intake pump, the first air intake pipe and the second air intake pipe both pass through the tubular diffusion furnace and are connected to the air intake pump.

2. The air intake device for TOPCON battery processing according to claim 1, characterized in that: The length of the first air intake pipe is shorter than that of the second air intake pipe.

3. The air intake device for TOPCON battery processing according to claim 1, characterized in that: A storage mechanism is provided inside the tubular diffusion furnace, and the storage mechanism is used for loading single crystal silicon wafers.

4. The air intake device for TOPCON battery processing according to claim 3, characterized in that: The storage mechanism includes a storage rack and an adjusting member. The storage rack includes a bottom plate. Both side walls of the bottom plate are connected to fixed plates. The adjusting member is located above the fixed plates.

5. The air intake device for TOPCON battery processing according to claim 4, characterized in that: A sliding groove is provided on one side wall of the fixing plate, and the adjusting member is movable in the sliding groove. A plurality of insertion holes are provided on the top end surface of the fixing plate.

6. The air intake device for TOPCON battery processing according to claim 5, characterized in that: The adjusting member is an adjusting plate, and a threaded hole matching the jack is provided on the end surface of the adjusting plate.

7. The air intake device for TOPCON battery processing according to claim 6, characterized in that: A fixing rod is provided on the outer side of the adjustment plate, and one end of the fixing rod passes through the insertion hole and is threadedly connected to the threaded hole.

8. The air intake device for TOPCON battery processing according to claim 4, characterized in that: The end surface of the bottom plate is provided with a plurality of placement grooves, and the placement grooves are used to fix the single crystal silicon wafers.

Images